CN102586728A - 镀膜件及其制备方法 - Google Patents
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Abstract
本发明提供一种镀膜件及该镀膜件的制备方法。该镀膜件包括包括基体及形成于基体表面的抗指纹层，该抗指纹层为纳米级碳氮氟层，其化学式为CXN1-XFY，其中0.6≤X≤0.8，0.2≤Y≤0.4。该镀膜件的制备方法包括如下步骤：提供一基体；以石墨靶为靶材，以氮气、四氟化碳气体为反应气体，采用磁控溅射镀膜法在该基体的表面溅镀纳米级CXN1-XFY的抗指纹层，其中0.6≤X≤0.8，0.2≤Y≤0.4。该镀膜件具有良好的抗指纹功能。
Description
技术领域
本发明涉及一种镀膜件及其制备方法，尤其涉及一种具有抗指纹功能的镀膜件及该镀膜件的制备方法。
背景技术
传统技术中，早期抗指纹化处理一般是采用在不锈钢的镀锌层上形成铬酸盐层及特殊的树脂层。该方法首先需要在不锈钢板上电镀一层锌，然后施以铬酸盐处理，最后以滚压的方式涂上一层树脂，其工艺繁锁，且需要使用铬酸盐处理，环境污染严重，成本较高。
因此，为避免污染，降低成本，人们开始研究新的抗指纹材料。目前工业上使用较多的是在基体上喷涂一层有机化学物质，如抗指纹涂料和抗指纹油等，通过加热干燥使其附着在基体上。但是这种涂层的制备工艺也较复杂，而且掺杂于抗指纹涂料和抗指纹油中的有些填料还存在游离甲醛等，不利于环保和人体健康。另外，这种有机涂层耐磨性能差，使用一段时间后容易磨损，使得基体被暴露出来，防腐蚀性能大幅下降且影响美观。此外，抗指纹油的使用会使涂层表面看起来很油腻，大大降低了视觉美感。
发明内容
鉴于此，有必要提供一种较为环保的、抗指纹性能佳且效果较为持久的镀膜件。
另外，还有必要提供一种上述镀膜件的制备方法。
一种镀膜件，其包括基体及形成于基体表面的抗指纹层，该抗指纹层为纳米级碳氮氟层，其化学式为CXN1-XFY，其中0.6≤X≤0.8，0.2≤Y≤0.4。
一种镀膜件的制备方法，其包括如下步骤：
提供一基体；
以石墨靶为靶材，以氮气、四氟化碳气体为反应气体，采用磁控溅射镀膜法在该基体的表面溅镀纳米级碳氮氟的抗指纹层，该纳米级碳氮氟的化学式为CXN1-XFY，其中0.6≤X≤0.8，0.2≤Y≤0.4。
相较于现有技术，所述的镀膜件采用磁控溅射镀膜的方法在基体表面形成一纳米级碳氮氟的抗指纹层，该纳米级碳氮氟层的表面能低，可实现较佳的抗指纹功能。另外，所述的抗指纹层以磁控溅射镀膜的方法形成，相较于传统的抗指纹材料，其具有较好的耐磨性，可防止所述抗指纹层被磨损，使得所述的镀膜件的抗指纹功能更持久，外观上也更具有美感。另外，所述镀膜件及其制备方法较为环保。
附图说明
图1是本发明较佳实施方式的镀膜件的剖视示意图。
图2是本发明较佳实施方式的磁控溅射镀膜机的俯视示意图。
主要元件符号说明
镀膜件 10
基体 11
抗指纹层 13
磁控溅射镀膜机 20
镀膜室 21
石墨靶 23
具体实施方式
请参阅图1，本发明一较佳实施方式的镀膜件10包括基体11及形成于基体11上的抗指纹层13。
基体11的材质可为不锈钢或玻璃。
抗指纹层13为纳米级碳氮氟层，其化学式为CXN1-XFY，其中0.6≤X≤0.8，0.2≤Y≤0.4。该抗指纹层13可以磁控溅射镀膜法形成，如中频磁控溅射镀膜法。该抗指纹层13的厚度为600-900nm。
对所述镀膜件10进行了水油接触角测试，结果显示，所述抗指纹层13与水油混合物的接触角在108-111°之间，证明所述镀膜件10具有良好的抗指纹功能。
本发明较佳实施方式的镀膜件10的制备方法包括如下步骤：
提供基体11，并对该基体11进行清洁前处理。该清洁前处理可包括以下步骤：
依次用去离子水及无水乙醇对基体11表面进行擦拭。
将基体11放入盛装有丙酮溶液的超声波清洗器中进行超声波清洗，以除去基体11表面的杂质和油污等。
对经上述清洁前处理后的基体11的表面进行等离子体清洗，以进一步去除基体11表面的脏污，以及改善基体11表面与后续镀层的结合力。
请参阅图2，将基体11放入一磁控溅射镀膜机20的镀膜室21中，于镀膜室21中安装石墨靶23，抽真空该镀膜室21至本底真空度为3.0×10-5Torr，然后通入流量为500sccm(标准毫升每分)的工作气体氩气(纯度为99.999％)，并对基体11施加-400V的偏压，使镀膜室21中产生高频电压。所述氩气在高频电压下离子化而产生高能氩气等离子体，该氩气等离子体对基体11的表面进行物理轰击，从而清除掉基体11表面的脏污，达到清洗的目的。所述等离子体清洗的时间为10分钟。
所述等离子体清洗完成后，在所述镀膜室21中以磁控溅射镀膜法，如中频磁控溅射镀膜法，在基体11的表面溅镀抗指纹层13。溅镀该抗指纹层13时，加热所述镀膜室21至温度为60-180℃(即溅镀温度为60-180℃)，调节氩气的流量在300-420sccm之间，通入流量为300-420sccm的反应气体氮气及流量为15-70sccm的反应气体四氟化碳(CF4)，调节基体11的偏压至-50～-150V，设置偏压的占空比为50％，开启石墨靶23的电源，使氮气及CF4产生辉光放电而离化，此时，离化的氮及氟同时与石墨靶23溅射出的粒子反应，而于基体11的表面沉积形成纳米级CXN1-XFY的抗指纹层13，其中0.6≤X≤0.8，0.2≤Y≤0.4。所述石墨靶23的电源功率为5-10kW。沉积该抗指纹层13的时间为20-60分钟，抗指纹层13的厚度在600-900nm之间。
以下结合具体实施例对镀膜件10的制备方法及镀膜件10的抗指纹性能进行说明。各实施例中清洁前处理及等离子体清洗均按上述揭露的方式进行，这里不再详述。
实施例1
该实施例基体11的材质为不锈钢。
溅镀纳米级CXN1-XFY以制备抗指纹层13：氩气流量为420sccm，氮气流量为150sccm，四氟化碳流量为15sccm，基体11的偏压为-50V，偏压的占空比为50％，石墨靶23的功率为6kW，溅镀温度为60℃，溅镀时间为30分钟，抗指纹层13的厚度为620nm。
本实施例CXN1-XFY中X的值为0.62，Y的值为0.28。
按本实施例方法所制得的抗指纹层13与水油混合物的接触角为108°。
实施例2
该实施例方法基本同实施例1，不同的是基体11的材质为玻璃。
实施例3
该实施例基体11的材质为不锈钢。
溅镀纳米级CXN1-XFY以制备抗指纹层13：氩气流量为300sccm，氮气流量为220sccm，四氟化碳流量为62sccm，基体11的偏压为-150V，偏压的占空比为50％，石墨靶23的功率为10kW，溅镀温度为150℃，溅镀时间为45分钟，抗指纹层13的厚度为860nm。
本实施例CXN1-XFY中X的值为0.8，Y的值为0.36。
按本实施例方法所制得的抗指纹层13与水油混合物的接触角为111°。
实施例4
该实施例方法基本同实施例3，不同的是基体11的材质为玻璃。
相较于现有技术，所述的镀膜件10采用磁控溅射镀膜的方法在基体11表面形成一纳米级碳氮氟的抗指纹层13，该纳米级碳氮氟层的表面能低，可实现较佳的抗指纹功能。另外，所述的抗指纹层13以磁控溅射镀膜的方法形成，相较于传统的抗指纹材料，其具有较好的耐磨性，可防止所述抗指纹层13被磨损，使得所述的镀膜件10的抗指纹功能更持久，外观上也更具有美感。另外，所述镀膜10件及其制备方法较为环保。
Claims (9)
1.一种镀膜件，其包括一基体及形成于基体表面的抗指纹层，其特征在于：该抗指纹层为纳米级碳氮氟层，其化学式为CXN1-XFY，其中0.6≤X≤0.8，0.2≤Y≤0.4。
2.如权利要求1所述的镀膜件，其特征在于：所述抗指纹层的厚度为600-900nm。
3.如权利要求1所述的镀膜件，其特征在于：所述抗指纹层以磁控溅射镀膜法形成。
4.如权利要求1所述的镀膜件，其特征在于：所述基体的材质为不锈钢或玻璃。
5.如权利要求1所述的镀膜件，其特征在于：所述抗指纹层与水油混合物的接触角为108-111°。
6.一种镀膜件的制备方法，其包括如下步骤：
提供一基体；
以石墨靶为靶材，以氮气、四氟化碳气体为反应气体，采用磁控溅射镀膜法在该基体的表面溅镀纳米级碳氮氟的抗指纹层，该纳米级碳氮氟的化学式为CXN1-XFY，其中0.6≤X≤0.8，0.2≤Y≤0.4。
7.如权利要求6所述的镀膜件的制备方法，其特征在于：溅镀所述抗指纹层对基体设置-50～150V的偏压，偏压的占空比为50％，溅镀温度为60-180℃，氮气的流量为300-420sccm，四氟化碳的流量为15-70sccm，以氩气为工作气体，氩气的流量为300-420sccm，石墨靶的电源功率为5-10kW，溅镀时间为20-60分钟。
8.如权利要求6所述的镀膜件的制备方法，其特征在于：所述制备方法还包括在溅镀抗指纹层前对基体进行清洁前处理及等离子体清洗的步骤。
9.如权利要求8所述的镀膜件的制备方法，其特征在于：所述等离子体清洗以氩气为工作气体，其流量为500sccm，对基体施加的偏压为-400V，等离子体清洗的时间为10分钟。
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| CN2011100066630A CN102586728A (zh) | 2011-01-13 | 2011-01-13 | 镀膜件及其制备方法 |
| US13/159,548 US20120183764A1 (en) | 2011-01-13 | 2011-06-14 | Coated article and method for making the same |
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Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6147407A (en) * | 1998-03-27 | 2000-11-14 | Lucent Technologies Inc. | Article comprising fluorinated amorphous carbon and process for fabricating article |
| CN1778851A (zh) * | 2004-11-23 | 2006-05-31 | 鸿富锦精密工业（深圳）有限公司 | 表面抗指纹化涂层 |
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- 2011-01-13 CN CN2011100066630A patent/CN102586728A/zh active Pending
- 2011-06-14 US US13/159,548 patent/US20120183764A1/en not_active Abandoned
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6147407A (en) * | 1998-03-27 | 2000-11-14 | Lucent Technologies Inc. | Article comprising fluorinated amorphous carbon and process for fabricating article |
| CN1778851A (zh) * | 2004-11-23 | 2006-05-31 | 鸿富锦精密工业（深圳）有限公司 | 表面抗指纹化涂层 |
Non-Patent Citations (2)
| Title |
|---|
| H.YOKOMICHI: "PREPARATION OF FLUORINATED AMORPHOUS CARBON NITRIDE FILMS BY MAGNETRON SPUTTERING", 《SURFACE ENGINEERING》 * |
| 张玉龙 等: "《纳米技术与纳米塑料》", 31 January 2002 * |
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