CN102576733B - Thin-film transistor, manufacturing method therefor, and liquid-crystal display device - Google Patents
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 17
- 239000004973 liquid crystal related substance Substances 0.000 title abstract description 18
- 239000010408 film Substances 0.000 claims abstract description 160
- 229910021417 amorphous silicon Inorganic materials 0.000 claims abstract description 72
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 49
- 229920005591 polysilicon Polymers 0.000 claims abstract description 48
- 239000000758 substrate Substances 0.000 claims abstract description 24
- 238000000034 method Methods 0.000 claims description 12
- 230000001678 irradiating effect Effects 0.000 claims description 5
- 239000011159 matrix material Substances 0.000 claims description 2
- 239000011521 glass Substances 0.000 abstract description 6
- 239000007789 gas Substances 0.000 description 10
- 230000002093 peripheral effect Effects 0.000 description 7
- 229910052782 aluminium Inorganic materials 0.000 description 4
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- 239000002184 metal Substances 0.000 description 4
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 3
- 230000001681 protective effect Effects 0.000 description 3
- 229910000077 silane Inorganic materials 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
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- 238000004544 sputter deposition Methods 0.000 description 2
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 238000005224 laser annealing Methods 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 229910000073 phosphorus hydride Inorganic materials 0.000 description 1
- 238000009751 slip forming Methods 0.000 description 1
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Abstract
本发明提供包含截止电流小、电位保持特性优异、消耗功率低的同时动作速度也快的低温多晶硅晶体管的薄膜晶体管、该薄膜晶体管的制造方法及使用它的液晶显示装置。该薄膜晶体管是在玻璃基板上形成栅电极、栅极绝缘膜、沟道区、源/漏电极的反交错结构的薄膜晶体管。该沟道区由多晶硅膜和覆盖该多晶硅膜的上表面及侧面的a-Si:H膜构成。
The present invention provides a thin film transistor including a low-temperature polysilicon transistor having low off-current, excellent potential holding characteristics, low power consumption, and high operating speed, a manufacturing method of the thin film transistor, and a liquid crystal display device using the same. The thin film transistor is a thin film transistor with an anti-staggered structure of a gate electrode, a gate insulating film, a channel region and a source/drain electrode formed on a glass substrate. The channel region is composed of a polysilicon film and an a-Si:H film covering the upper surface and side surfaces of the polysilicon film.
Description
技术领域 technical field
本发明涉及反交错结构的薄膜晶体管，特别涉及适合于液晶显示装置的显示部的像素晶体管的薄膜晶体管、其制造方法及液晶显示装置。The present invention relates to a thin film transistor having an inverted staggered structure, and more particularly to a thin film transistor suitable for a pixel transistor in a display portion of a liquid crystal display device, a method for manufacturing the same, and a liquid crystal display device.
背景技术 Background technique
作为反交错结构的薄膜晶体管，有非晶硅晶体管，它利用Cr或Al等金属层在绝缘性基板上形成栅电极，接着作为栅极绝缘膜例如在包含该栅电极的基板上形成SiN膜，然后在整个面上形成氢化非晶硅(以下称作“a-Si:H”)膜。该非晶硅晶体管进而在a-Si:H膜上例如形成n+Si膜，在栅电极上的规定区域对a-Si:H膜及n+Si膜岛状构图，再利用金属层形成源/漏电极后，将该源/漏电极作为掩模，蚀刻n+Si膜，除去沟道区预定区域的上方的n+Si膜，从而在a-Si:H膜和SiN栅极绝缘膜的交界处形成沟道区，接着全面形成钝化膜后即告完成。这种反交错结构的非晶硅薄膜晶体管由于截止电流IOFF较小，所以例如可以作为液晶显示装置的像素晶体管使用。As an inverted staggered thin film transistor, there is an amorphous silicon transistor in which a gate electrode is formed on an insulating substrate using a metal layer such as Cr or Al, and then a SiN film is formed as a gate insulating film, for example, on a substrate including the gate electrode. A hydrogenated amorphous silicon (hereinafter referred to as "a-Si:H") film is then formed on the entire surface. In this amorphous silicon transistor, for example, an n + Si film is formed on the a-Si:H film, and the a-Si:H film and the n + Si film are patterned in an island shape in a predetermined region on the gate electrode, and then the source is formed using a metal layer. After the source/drain electrode is used as a mask, the n + Si film is etched to remove the n + Si film above the predetermined region of the channel region, so that the a-Si:H film and the SiN gate insulating film The channel region is formed at the junction, and then the passivation film is formed on the entire surface to complete. Such an amorphous silicon thin film transistor with an inverted staggered structure can be used, for example, as a pixel transistor of a liquid crystal display device because the off-state current I OFF is small.
可是，非晶硅晶体管因为在沟道区中使用a-Si:H膜，所以存在着沟道区中的电荷迁移率小的问题。进来有人提出了在形成像素部的基板的周边部形成驱动电路的液晶显示装置的方案，但在该液晶显示装置中，尽管非晶硅晶体管可以作为像素部的像素晶体管使用，可是作为更加高速地改写所需的周边驱动电路的构成晶体管，沟道区的电荷迁移率过于小，难以使用。However, the amorphous silicon transistor has a problem of low charge mobility in the channel region because an a-Si:H film is used in the channel region. Recently, someone has proposed a liquid crystal display device in which a driving circuit is formed on a peripheral portion of a substrate forming a pixel portion. The transistors that constitute peripheral drive circuits required for rewriting have too low charge mobility in the channel region and are difficult to use.
因此，又有人提出了下述方案：向a-Si照射激光进行退火，从而使a-Si结晶化为多结晶硅(以下称作“多晶硅”)，在沟道区形成多晶硅膜的反交错结构的低温多晶硅晶体管(专利文献1)。Therefore, it has been proposed that a-Si is irradiated with laser light for annealing, thereby crystallizing a-Si into polycrystalline silicon (hereinafter referred to as "polysilicon"), and forming an inverted staggered structure of polysilicon film in the channel region. low-temperature polysilicon transistor (Patent Document 1).
专利文献1所述的低温多晶硅晶体管，采用下述方法形成。就是说，如图7所示，在玻璃基板101上形成Cr或Al等的栅电极102，接着在包含栅电极102的基板101的整个面上形成由SiN构成的栅极绝缘膜103，进而在其上形成厚度为10～40nm的a-Si:H膜。然后，使向该a-Si:H膜线状照射激光束的激光照射部件朝着垂直于所述线的方向扫描，从而向a-Si:H膜的整个面上照射受激准分子激光进行退火，将整个a-Si:H膜改性为多晶硅膜104。接着，在改性后的多晶硅膜104上再次形成a-Si:H膜105，进而在a-Si:H膜105上形成n+Si膜106，在栅电极102的上方岛状蚀刻加工这些n+Si膜106、a-Si:H膜105及多晶硅膜104。然后，在该岛状Si三层膜上形成源/漏电极107，将该源/漏电极107作为掩模，除去n+Si膜106，其后全面形成钝化膜108。The low-temperature polysilicon transistor described in Patent Document 1 is formed by the following method. That is, as shown in FIG. 7, a gate electrode 102 such as Cr or Al is formed on a glass substrate 101, and then a gate insulating film 103 made of SiN is formed on the entire surface of the substrate 101 including the gate electrode 102. An a-Si:H film with a thickness of 10 to 40 nm is formed thereon. Then, the laser irradiation unit that irradiates the laser beam to the a-Si:H film in a line is scanned in a direction perpendicular to the line, thereby irradiating the excimer laser light on the entire surface of the a-Si:H film. annealing to modify the entire a-Si:H film into a polysilicon film 104 . Next, an a-Si:H film 105 is formed again on the modified polysilicon film 104, and an n + Si film 106 is formed on the a-Si:H film 105, and these n + Si films are etched in an island shape above the gate electrode 102. + Si film 106, a-Si:H film 105 and polysilicon film 104. Then, the source/drain electrodes 107 are formed on the island-shaped Si triple-layer film, and the n + Si film 106 is removed using the source/drain electrodes 107 as a mask, and then the passivation film 108 is formed over the entire surface.
这样形成的低温多晶硅晶体管，用多晶硅膜104和a-Si:H膜105二层膜构成沟道区，多晶硅膜104与SiN栅极绝缘膜103接触，所以沟道区的电荷迁移率增大，导通电流变大，动作速度加快，从而足以能够作为液晶显示装置的周边驱动电路用的晶体管使用。The low-temperature polysilicon transistor formed in this way uses the polysilicon film 104 and the a-Si:H film 105 two-layer film to form the channel region, and the polysilicon film 104 is in contact with the SiN gate insulating film 103, so the charge mobility in the channel region increases, The conduction current becomes large, and the operation speed is fast enough to be used as a transistor for a peripheral drive circuit of a liquid crystal display device.
专利文献1：日本特开平5-63196号公报Patent Document 1: Japanese Patent Application Laid-Open No. 5-63196
发明内容 Contents of the invention
可是，上述现有技术的低温多晶硅晶体管，尽管导通电流大，但是截止电流也大，在使电位保持特性降低的同时，还使泄漏的电流增大，所以存在着消耗功率大的问题。However, the low-temperature polysilicon transistor of the prior art described above has a large off-current despite a large on-current, which degrades potential holding characteristics and increases leakage current, resulting in a problem of high power consumption.
本发明就是针对上述情况研制的，其目的在于提供包含截止电流小、电位保持特性优异、消耗功率低的同时动作速度也快的低温多晶硅晶体管的薄膜晶体管、该薄膜晶体管的制造方法及使用它的液晶显示装置。The present invention has been developed in view of the above circumstances, and its object is to provide a thin film transistor including a low-temperature polysilicon transistor having a small off-state current, excellent potential holding characteristics, low power consumption, and fast operating speed, a method of manufacturing the thin film transistor, and a method using the thin film transistor. Liquid crystal display device.
本发明涉及的薄膜晶体管，是反交错结构的薄膜晶体管，其特征在于，具有：绝缘性基板；在该绝缘性基板上形成的栅电极；在该栅电极上形成的栅极绝缘膜；在该栅极绝缘膜上的与所述栅电极对应的位置岛状形成的多晶硅膜；覆盖该多晶硅膜的上表面及侧面地形成的非晶硅膜；以及与该非晶硅膜的两端部电连接地形成的源/漏电极。The thin film transistor of the present invention is a thin film transistor with an inverted staggered structure, and is characterized in that it has: an insulating substrate; a gate electrode formed on the insulating substrate; a gate insulating film formed on the gate electrode; A polysilicon film formed in an island shape on a gate insulating film corresponding to the gate electrode; an amorphous silicon film formed to cover the upper surface and side surfaces of the polysilicon film; and electrodes connected to both ends of the amorphous silicon film connected to form the source/drain electrodes.
所述栅极绝缘膜，例如是SiN膜。The gate insulating film is, for example, a SiN film.
本发明涉及的薄膜晶体管的制造方法，是反交错结构的薄膜晶体管的制造方法，其特征在于，具有：在绝缘性基板上形成栅电极的工序；在包含所述栅电极的所述基板上形成栅极绝缘膜的工序；在所述栅极绝缘膜上形成第一非晶硅膜的工序；对于所述第一非晶硅膜，向与所述栅电极对应的岛状区域照射激光，将该区域改性为多晶硅膜的工序；在该改性多晶硅区域及第一非晶硅膜区域上形成第二非晶硅膜的工序；留下覆盖所述改性多晶硅膜的上表面及侧面的非晶硅膜，除去其它部分的非晶硅膜的工序；以及与留下的非晶硅膜的两端部电连接地形成源/漏电极的工序。此外，在所述非晶硅膜中，除了不含氢的膜(a-Si膜)以外，还包含含氢的氢化非晶硅膜(a-Si:H膜)等。The method for manufacturing a thin film transistor according to the present invention is a method for manufacturing a thin film transistor with an inverted staggered structure, and is characterized in that it includes: a step of forming a gate electrode on an insulating substrate; forming a gate electrode on the substrate including the gate electrode; a step of forming a gate insulating film; a step of forming a first amorphous silicon film on the gate insulating film; irradiating laser light to an island-like region corresponding to the gate electrode to the first amorphous silicon film, The process of modifying the region into a polysilicon film; the process of forming a second amorphous silicon film on the modified polysilicon region and the first amorphous silicon film region; leaving the upper surface and side surfaces of the modified polysilicon film. The amorphous silicon film, a step of removing other parts of the amorphous silicon film, and a step of forming source/drain electrodes electrically connected to both ends of the remaining amorphous silicon film. In addition, the amorphous silicon film includes a hydrogenated amorphous silicon film containing hydrogen (a-Si:H film) and the like in addition to a film not containing hydrogen (a-Si film).
在所述激光的照射工序中，利用配置多个微透镜的微透镜阵列将激光聚光而获得多个激光束，用所述各激光束照射矩阵状配置的多个薄膜晶体管的所述岛状区域，能够形成多个薄膜晶体管的多晶硅区域。In the step of irradiating the laser light, the laser light is condensed by a microlens array arranged with a plurality of microlenses to obtain a plurality of laser beams, and the islands of the plurality of thin film transistors arranged in a matrix are irradiated with the laser beams. The region is a polysilicon region capable of forming a plurality of thin film transistors.
另外，本发明涉及的液晶显示装置，其特征在于：将所述薄膜晶体管作为显示部的像素晶体管及周边驱动电路的驱动晶体管使用。In addition, the liquid crystal display device according to the present invention is characterized in that the thin film transistor is used as a pixel transistor of a display unit and a driving transistor of a peripheral driving circuit.
依据本发明的薄膜晶体管，因为在SiN膜等栅极绝缘膜和多晶硅膜的交界处形成沟道区，所以电荷的迁移速度快、导通电流大、写入速度加快，从而使动作速度加快。而且非晶硅膜覆盖多晶硅膜的侧面，因为该非晶硅膜的电荷的适移速度慢，所以与不存在非晶硅膜时相比，能够使泄漏电流降低，在获得优异的电位保持特性的同时，还降低消耗功率。According to the thin film transistor of the present invention, since the channel region is formed at the junction of the gate insulating film such as the SiN film and the polysilicon film, the charge transfer speed is fast, the conduction current is large, and the writing speed is fast, thereby speeding up the operation speed. Moreover, the side surface of the polysilicon film is covered with an amorphous silicon film, and since the charge transfer speed of the amorphous silicon film is slow, compared with when there is no amorphous silicon film, leakage current can be reduced, and excellent potential holding characteristics can be obtained. At the same time, it also reduces power consumption.
另外，依据本发明的薄膜晶体管的制造方法，因为对于第一非晶硅膜，向与栅电极对应的岛状区域局部性地照射激光，将该区域改性为多晶硅膜，进而在该多晶硅膜及第一非晶硅膜上形成第二非晶硅膜后，形成由所述多晶硅膜和覆盖该多晶硅膜的上表面及侧面的非晶硅膜构成的沟道区域，所以能够容易制造本发明的薄膜晶体管。In addition, according to the manufacturing method of the thin film transistor of the present invention, since the island-like region corresponding to the gate electrode is locally irradiated with laser light on the first amorphous silicon film, the region is modified into a polysilicon film, and the polysilicon film And after the second amorphous silicon film is formed on the first amorphous silicon film, a channel region composed of the polysilicon film and the amorphous silicon film covering the upper surface and side surfaces of the polysilicon film is formed, so the present invention can be easily manufactured. thin film transistors.
进而，依据本发明的液晶显示装置，能够使驱动电路的动作速度加快，泄漏电流降低，还降低消耗功率。Furthermore, according to the liquid crystal display device of the present invention, the operating speed of the drive circuit can be increased, leakage current can be reduced, and power consumption can also be reduced.
附图说明 Description of drawings
图1表示本发明的实施方式涉及的薄膜晶体管，(a)是平面图，(b)是(a)的B-B线的剖面图，(c)是(a)的C-C线的剖面图。1 shows a thin film transistor according to an embodiment of the present invention, (a) is a plan view, (b) is a cross-sectional view along line B-B of (a), and (c) is a cross-sectional view along line C-C of (a).
图2是表示本发明的实施方式中的液晶显示装置的显示部的1个像素的平面图。2 is a plan view showing one pixel of a display portion of the liquid crystal display device according to the embodiment of the present invention.
图3是表示在本发明的实施方式涉及的制造方法中使用的利用微透镜阵列的激光照射装置的图，(a)是整体图，(b)表示微透镜阵列。3 is a view showing a laser irradiation device using a microlens array used in a manufacturing method according to an embodiment of the present invention, (a) is an overall view, and (b) shows a microlens array.
图4(a)～(c)是按照工序顺序表示本发明的实施方式涉及的薄膜晶体管的制造方法的剖面图。4( a ) to ( c ) are cross-sectional views showing the manufacturing method of the thin film transistor according to the embodiment of the present invention in order of steps.
图5(a)～(c)是按照工序顺序表示本发明的实施方式涉及的薄膜晶体管的制造方法的剖面图，表示图4的下道工序。5( a ) to ( c ) are cross-sectional views showing the manufacturing method of the thin film transistor according to the embodiment of the present invention in order of steps, showing the next step of FIG. 4 .
图6(a)～(c)是按照工序顺序表示本发明的实施方式涉及的薄膜晶体管的制造方法的剖面图，表示图5的下道工序。6( a ) to ( c ) are cross-sectional views showing the manufacturing method of the thin film transistor according to the embodiment of the present invention in order of steps, showing the next step of FIG. 5 .
图7是表示现有的反交错结构的薄膜晶体管的剖面图。FIG. 7 is a cross-sectional view showing a conventional thin film transistor having an inverted staggered structure.
具体实施方式 Detailed ways
下面，参照附图，具体讲述本发明的实施方式。图1是表示本发明的实施方式涉及的薄膜晶体管、图2是表示液晶显示装置的显示部的1个像素的平面图。在液晶显示装置中，配置显示部和在该显示部的周边部的驱动用的周边电路，在显示部中，如图2所示正交地形成多个扫描线SL和多个信号线DL，在被该扫描线SL和信号线DL包围的单位区域形成1个像素。在各像素中，形成由ITO(Indium TinOxide)构成的透明电极TE和开关晶体管T，该晶体管T的栅电极与扫描线SL连接，晶体管T的漏极与信号线DL连接，源极与由ITO构成的透明电极TE连接。Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. FIG. 1 shows a thin film transistor according to an embodiment of the present invention, and FIG. 2 is a plan view showing one pixel of a display portion of a liquid crystal display device. In the liquid crystal display device, a display portion and peripheral circuits for driving in the peripheral portion of the display portion are arranged, and in the display portion, a plurality of scanning lines SL and a plurality of signal lines DL are formed orthogonally as shown in FIG. 2 , One pixel is formed in a unit area surrounded by the scanning line SL and the signal line DL. In each pixel, a transparent electrode TE made of ITO (Indium TinOxide) and a switching transistor T are formed. The gate electrode of the transistor T is connected to the scanning line SL, the drain of the transistor T is connected to the signal line DL, and the source is connected to the ITO. constitute the transparent electrode TE connection.
图1(a)是晶体管1(T)的平面图，图1(b)是图1(a)的B-B线的剖面图，图1(c)是图1(a)的C-C线的剖面图。如图1(a)所示，晶体管T的栅极G与扫描线SL连接，漏极D与信号线DL连接，源极S与透明电极TE连接。在栅极G的上方，形成构成沟道区域的岛IL；在岛IL上方，隔开适当长度的间隔相向形成漏极D及源极S。Fig. 1 (a) is the plan view of transistor 1 (T), Fig. 1 (b) is the sectional view of the B-B line of Fig. 1 (a), Fig. 1 (c) is the sectional view of the C-C line of Fig. 1 (a). As shown in FIG. 1( a ), the gate G of the transistor T is connected to the scanning line SL, the drain D is connected to the signal line DL, and the source S is connected to the transparent electrode TE. Above the gate G, an island IL constituting a channel region is formed; and above the island IL, a drain D and a source S are formed to face each other with an interval of an appropriate length.
如图1(b)及图1(c)所示，本实施方式的薄膜晶体管1(T)，在透明绝缘性的玻璃基板10上形成与扫描线SL连接的栅电极11(G)，包括该栅电极11上在内、在基板10上形成由SiN构成的栅极绝缘膜12。栅电极11是Cr或Al等的金属层，能够采用溅射法形成。在栅极绝缘膜12上，在栅电极11上的位置，岛状(IL)地形成多晶硅膜13，覆盖该多晶硅膜13的上表面及侧面地形成氢化非晶硅膜(以下称作“a-Si:H膜”)14。在该a-Si:H膜14的两端部上重叠地形成与信号线DL连接的漏电极15a(D)及与像素的透明电极TE连接的源电极15b(S)。然后，全面形成由SiN构成的保护膜16。As shown in FIG. 1(b) and FIG. 1(c), the thin film transistor 1(T) of this embodiment forms a gate electrode 11(G) connected to the scanning line SL on a transparent insulating glass substrate 10, including A gate insulating film 12 made of SiN is formed on the substrate 10 inside the gate electrode 11 . The gate electrode 11 is a metal layer such as Cr or Al, and can be formed by a sputtering method. On the gate insulating film 12, a polysilicon film 13 is formed in an island shape (IL) at a position above the gate electrode 11, and a hydrogenated amorphous silicon film (hereinafter referred to as "a" is formed to cover the upper surface and side surfaces of the polysilicon film 13). -Si:H film") 14. On both ends of the a-Si:H film 14, a drain electrode 15a (D) connected to the signal line DL and a source electrode 15b (S) connected to the transparent electrode TE of the pixel are formed to overlap. Then, the protective film 16 made of SiN is formed over the entire surface.
在如此构成的反交错结构的薄膜晶体管中，a-Si:H膜14与漏电极15a及源电极15b电连接，由该a-Si:H膜14和多晶硅膜13形成沟道区。由于晶体管动作时，在多晶硅膜13和SiN栅极绝缘膜12的交界处生成电荷，该电荷在该交界处移动，所以本实施方式的薄膜晶体管的电荷迁移率高，导通电流大。这样，本实施方式的薄膜晶体管由于导通电流大，所以能够缩短写入时间，进行高速动作。In the thin film transistor having an inverted staggered structure thus configured, the a-Si:H film 14 is electrically connected to the drain electrode 15a and the source electrode 15b, and the a-Si:H film 14 and the polysilicon film 13 form a channel region. When the transistor operates, charges are generated at the interface between the polysilicon film 13 and the SiN gate insulating film 12 and the charges move at the interface. Therefore, the thin film transistor of this embodiment has high charge mobility and large ON current. As described above, since the thin film transistor of this embodiment has a large conduction current, it is possible to shorten the writing time and perform high-speed operation.
而且，因为在由该多晶硅膜13构成的岛的周围即多晶硅膜13的侧面形成非晶质的a-Si:H膜14，所以将岛的周围作为路径的泄漏电流少，截止电流小。这样，由于截止电流小，所以电位的保持特性优异，能够防止液晶显示装置的显示部的像素晶体管的电位随着时间而下降。因此，依据本实施方式，能够获得导通电流大、截止电流小的晶体管。这样，该晶体管可以高速度动作，并且还使电位保持特性优异、消耗功率小。Furthermore, since the amorphous a-Si:H film 14 is formed around the island formed by the polysilicon film 13, that is, on the side surface of the polysilicon film 13, the leakage current that takes the island's periphery as a path is small, and the off current is small. As described above, since the off-state current is small, the potential retention characteristics are excellent, and it is possible to prevent the potential of the pixel transistors in the display portion of the liquid crystal display device from decreasing over time. Therefore, according to the present embodiment, it is possible to obtain a transistor with a large ON current and a small OFF current. Thus, the transistor can operate at a high speed, has excellent potential holding characteristics, and has low power consumption.
接着，讲述如上所述地构成的薄膜晶体管的制造方法。图4(a)～(c)、图5(a)～(c)及图6(a)～(c)是按照工序顺序表示本实施方式的制造方法的剖面图。如图4(a)所示，采用溅射法在玻璃基板1上形成由Mo、Cr或Al等金属膜构成的例如厚度为2000～3000的栅电极2。该栅电极可以和扫描线SL同时在玻璃基板1上构图形成。Next, a method for manufacturing the thin film transistor configured as described above will be described. 4( a ) to ( c ), FIGS. 5( a ) to ( c ), and FIGS. 6( a ) to ( c ) are cross-sectional views showing the manufacturing method of the present embodiment in order of steps. As shown in Fig. 4 (a), a sputtering method is used to form a metal film made of Mo, Cr or Al on the glass substrate 1 with a thickness of, for example, 2000 to 3000 The gate electrode 2. The gate electrode can be patterned and formed on the glass substrate 1 at the same time as the scan line SL.
接着，如图4(b)所示，例如将硅烷及H2气体作为原料气体，采用250～300。的低温等离子体CVD法，全面形成例如厚度为2500～5000的由SiN膜构成的栅极绝缘膜3。然后，如图4(c)所示，例如采用等离子体CVD法在栅极绝缘膜3上形成例如厚度为200～1000的第一a-Si:H膜4a。该a-Si:H膜4a在形成SiN膜后不使基板暴露在空气中地移动到别的容器中后连续成膜。将硅烷、氨和H2气体作为原料气体形成a-Si:H膜4a，虽然混合H2气体有利于改善膜质，但是其添加是任意的。其后，取出基板，通过使用图3(a)所示的微透镜阵列对a-Si:H膜4a进行的激光退火，从而只向形成沟道区的预定区域照射激光进行退火，使该形成沟道区的预定区域多结晶化，形成多晶硅膜4。Next, as shown in FIG. 4( b ), for example, silane and H 2 gas are used as source gases, and 250 to 300 are used. The low-temperature plasma CVD method can be used to form a comprehensive thickness of 2500-5000 gate insulating film 3 made of SiN film. Then, as shown in FIG. 4(c), for example, a plasma CVD method is used to form, for example, a thickness of 200 to 1000 on the gate insulating film 3. The first a-Si:H film 4a. The a-Si:H film 4 a is continuously formed after being moved to another container without exposing the substrate to the air after the SiN film is formed. Silane, ammonia and H 2 gas are used as raw material gases to form the a-Si:H film 4a. Although mixing H 2 gas is beneficial to improve the film quality, its addition is optional. Thereafter, the substrate was taken out, and the a-Si:H film 4a was annealed by laser using the microlens array shown in FIG. A predetermined region of the channel region is polycrystallized to form a polysilicon film 4 .
如图3所示，使用该微透镜阵列的激光退火装置，利用透镜组32将光源31射出的激光变成平行光束，经由微透镜阵列35，照射被照射体36。激光光源31是例如用50Hz的交变周期发射波长例如为308nm或353nm的激光的受激准分子激光器。微透镜阵列35是在透明基板34上配置许多微透镜35的部件，它使激光聚光到作为被照射体36的设定在薄膜晶体管基板的薄膜晶体管形成区域。透明基板34被与被照射体36平行地配置，微透镜35则被以晶体管形成区域的排列间距的2以上的整数倍(例如2)的间距配置。本实施方式的被照射体36是薄膜晶体管1，向图4(c)所示的形成沟道区的预定区域照射被微透镜35聚光后的激光。此外，在被透镜组32整形为平行光束的激光束的行进途中配置着遮光部件33，利用该遮光部件33可以将被微透镜34聚光后照射被照射体36的激光束的光束形状例如整形成为矩形。这样，如图1(a)所示，即使形成沟道区的预定区域是矩形，也可以利用微透镜34有选择地照射那个区域。As shown in FIG. 3 , in the laser annealing device using the microlens array, the laser light emitted from the light source 31 is converted into a parallel beam by the lens group 32 , and the irradiated object 36 is irradiated through the microlens array 35 . The laser light source 31 is, for example, an excimer laser that emits laser light having a wavelength of, for example, 308 nm or 353 nm with an alternating cycle of 50 Hz. The microlens array 35 is a member in which a large number of microlenses 35 are arranged on a transparent substrate 34 , and condenses laser light onto a thin film transistor formation region set on a thin film transistor substrate as an irradiated object 36 . The transparent substrate 34 is arranged parallel to the object to be irradiated 36 , and the microlenses 35 are arranged at a pitch that is an integer multiple (for example, 2) of 2 or more of the array pitch of the transistor formation regions. The object to be irradiated 36 in the present embodiment is the thin film transistor 1 , and irradiates the laser beam condensed by the microlens 35 to the region where the channel region is to be formed as shown in FIG. 4( c ). In addition, a light-shielding member 33 is disposed in the course of the laser beam shaped into a parallel beam by the lens group 32, and the light-shielding member 33 can shape, for example, the beam shape of the laser beam that is condensed by the microlens 34 and irradiates the object 36 to be irradiated. become a rectangle. Thus, as shown in FIG. 1(a), even if the predetermined area where the channel region is to be formed is rectangular, that area can be selectively irradiated with the microlens 34. Referring to FIG.
接着，如图5(a)所示，在多晶硅膜4及第一a-Si:H膜4a层上的整个面上形成例如厚度为2000～3000的第二a-Si:H膜5a。该第二a-Si:H膜5a的成膜条件和第一a-Si:H膜4a的成膜条件相同。然后，不从容器中取出基板地连续性地如图5(b)所示在a-Si:H膜5a之上形成例如厚度为500左右的n+Si膜6a。该n+Si膜6a可以将向硅烷中混合磷化氢等含P的气体的气体作为原料气体，采用等离子体CVD法成膜。这时，还可以将H2气体混入原料气体。再接着，取出基板，如图5(c)所示，使a-Si:H膜4a、a-Si:H膜5a及n+Si膜6a，只留下多晶硅膜4的上方的部分和多晶硅膜4的侧面的a-Si:H膜4a，除去其他部分，构图形成岛状的沟道区。Next, as shown in Fig. 5 (a), on the entire surface of the polysilicon film 4 and the first a-Si:H film 4a layer, a film with a thickness of, for example, 2000 to 3000 Å is formed. The second a-Si:H film 5a. The film-forming conditions of the second a-Si:H film 5a are the same as the film-forming conditions of the first a-Si:H film 4a. Then, without taking out the substrate from the container, as shown in FIG. Around the n + Si film 6a. The n + Si film 6 a can be formed by a plasma CVD method using a gas containing P-containing gas such as phosphine mixed with silane as a source gas. At this time, H2 gas can also be mixed into the raw material gas. Then, take out the substrate, as shown in Figure 5 (c), make a-Si:H film 4a, a-Si:H film 5a and n + Si film 6a, only stay the part above the polysilicon film 4 and polysilicon The a-Si:H film 4a on the side surface of the film 4 is patterned to form an island-shaped channel region except other parts.
然后，如图6(a)所示，以与n+Si膜6a的端部接触的方式，形成例如厚度为2000～5000的漏电极7a和源电极7b。接着，如图6(b)所示，将这些漏电极7a及源电极7b作为掩模，蚀刻除去n+Si膜6a，从而只在漏电极7a及源电极7b和a-Si:H膜5之间留下n+膜6。Then, as shown in Fig. 6(a), in such a manner as to be in contact with the end of the n + Si film 6a, a film having a thickness of, for example, 2000 to 5000 drain electrode 7a and source electrode 7b. Next, as shown in FIG. 6(b), these drain electrodes 7a and source electrodes 7b are used as masks to etch and remove the n + Si film 6a, so that only the drain electrode 7a and source electrode 7b and the a-Si:H film 5 Leaving n + film 6 in between.
其后，如图6(c)所示，全面形成由SiN膜构成的保护膜8。在图6(c)中，用括号表示与图1(b)的结构对应的部分的符号。图6(c)所示的结构，在源/漏电极和a-Si:H膜之间设置n+Si膜6，这一点与图1(b)的结构不同。该n+Si膜6是为了提高源/漏电极和a-Si:H膜之间的贴紧性、降低接触电阻而设置的。可是，该n+Si膜的形成是任意的，也可以如图1所示不形成n+Si膜，或者采用其它的方法降低源/漏电极和a-Si:H膜之间的接触电阻。Thereafter, as shown in FIG. 6(c), a protective film 8 made of a SiN film is formed over the entire surface. In FIG. 6( c ), symbols of parts corresponding to the structure of FIG. 1( b ) are shown in parentheses. The structure shown in FIG. 6(c) differs from the structure in FIG. 1(b) in that the n + Si film 6 is provided between the source/drain electrodes and the a-Si:H film. The n + Si film 6 is provided for improving the adhesion between the source/drain electrodes and the a-Si:H film and reducing the contact resistance. However, the formation of the n + Si film is optional, and the n + Si film may not be formed as shown in Fig. 1, or other methods may be used to reduce the contact resistance between the source/drain electrodes and the a-Si:H film.
这样，能够制造出图1所示的薄膜晶体管。在上述制造方法中，因为能够使用微透镜阵列只向薄膜晶体管的沟道区照射激光束，所以能够利用该激光束的照射对a-Si:H膜进行退火，从而只使形成沟道区的预定区域结晶化，形成岛状的多晶硅膜4。因此，能够容易制造出a-Si:H膜14(4a)覆盖多晶硅膜13(4)的侧面及上表面的结构的薄膜晶体管。In this way, the thin film transistor shown in FIG. 1 can be manufactured. In the above-mentioned manufacturing method, since the laser beam can be irradiated only to the channel region of the thin film transistor using the microlens array, the a-Si:H film can be annealed by the irradiation of the laser beam so that only the channel region is formed. Predetermined regions are crystallized to form island-shaped polysilicon films 4 . Therefore, a thin film transistor having a structure in which the a-Si:H film 14 ( 4 a ) covers the side surfaces and the upper surface of the polysilicon film 13 ( 4 ) can be easily manufactured.
另外，由以上说明可知：通过将本实施方式的反交错结构的薄膜晶体管作为液晶显示装置的显示部的像素晶体管使用，能够提高显示部的像素晶体管的速度，降低泄漏电流，从而使电位趋于稳定。另外，还能够将本实施方式的反交错结构的薄膜晶体管作为液晶显示装置的周边驱动电路的晶体管使用，由于本实施方式的薄膜晶体管在沟道区使用多晶硅膜，所以能够高速动作。总而言之，本实施方式的薄膜晶体管，因为导通电流大、截止电流小，所以宜于作为液晶显示装置的晶体管使用。In addition, it can be seen from the above description that by using the thin film transistor with an inverse staggered structure of this embodiment as a pixel transistor in the display part of a liquid crystal display device, the speed of the pixel transistor in the display part can be increased, the leakage current can be reduced, and the potential can be made closer to Stablize. In addition, the thin film transistor with an inverse staggered structure of this embodiment can also be used as a transistor in a peripheral drive circuit of a liquid crystal display device. Since the thin film transistor of this embodiment uses a polysilicon film in the channel region, it can operate at high speed. In short, the thin film transistor of this embodiment is suitable for use as a transistor of a liquid crystal display device because of its large on-current and small off-current.
产业上的利用可能性Industrial Utilization Possibility
本发明有益于使用反交错结构的薄膜晶体管制造液晶显示装置。The invention is beneficial to the manufacture of liquid crystal display devices using thin film transistors with an inverted staggered structure.
符号说明Symbol Description
1、10玻璃基板；2、11栅电极；3、12栅极绝缘膜；4、13多晶硅膜；4a、5、5a、14 a-Si:H膜；6、6a n+膜；7a、15a漏电极；7b、15b源电极；8、16保护膜。1, 10 glass substrate; 2, 11 gate electrode; 3, 12 gate insulating film; 4, 13 polysilicon film; 4a, 5, 5a, 14 a-Si:H film; 6, 6a n + film; 7a, 15a Drain electrode; 7b, 15b source electrode; 8, 16 protective film.
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| JP2009-173709 | 2009-07-24 | ||
| JP2009173709A JP5470519B2 (en) | 2009-07-24 | 2009-07-24 | Thin film transistor, manufacturing method thereof, and liquid crystal display device |
| PCT/JP2010/062075 WO2011010611A1 (en) | 2009-07-24 | 2010-07-16 | Thin-film transistor, manufacturing method therefor, and liquid-crystal display device |
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| WO2012117439A1 (en) * | 2011-02-28 | 2012-09-07 | パナソニック株式会社 | Thin-film semiconductor device and manufacturing method therefor |
| KR102094568B1 (en) * | 2012-10-17 | 2020-03-27 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | Semiconductor device and method for manufacturing the same |
| US10038098B2 (en) | 2014-11-07 | 2018-07-31 | Sakai Display Products Corporation | Method for manufacturing thin film transistor, thin film transistor and display panel |
| JP6471379B2 (en) * | 2014-11-25 | 2019-02-20 | 株式会社ブイ・テクノロジー | Thin film transistor, thin film transistor manufacturing method, and laser annealing apparatus |
| CN104460165B (en) * | 2014-12-31 | 2017-06-16 | 深圳市华星光电技术有限公司 | A kind of liquid crystal display and liquid crystal panel and array base palte |
| JP6334057B2 (en) * | 2015-03-27 | 2018-05-30 | 堺ディスプレイプロダクト株式会社 | Thin film transistor and display panel |
| US10008606B2 (en) * | 2015-03-30 | 2018-06-26 | Sakai Display Products Corporation | Thin film transistor and display panel |
| US10453876B2 (en) | 2015-04-20 | 2019-10-22 | Sakai Display Products Corporation | Method for manufacturing thin film transistor and display panel |
| JP6483271B2 (en) | 2015-09-17 | 2019-03-13 | 堺ディスプレイプロダクト株式会社 | THIN FILM TRANSISTOR AND METHOD FOR PRODUCING THIN FILM TRANSISTOR |
| JP6480593B2 (en) * | 2015-09-18 | 2019-03-13 | 堺ディスプレイプロダクト株式会社 | Thin film transistor manufacturing method and thin film transistor |
| WO2017072921A1 (en) * | 2015-10-29 | 2017-05-04 | 堺ディスプレイプロダクト株式会社 | Thin film transistor substrate manufacturing method |
| JP6666426B2 (en) | 2016-03-04 | 2020-03-13 | 堺ディスプレイプロダクト株式会社 | Laser annealing apparatus, mask, and laser annealing method |
| CN105633101A (en) * | 2016-04-01 | 2016-06-01 | 京东方科技集团股份有限公司 | TFT array substrate and manufacture method thereof, and display device |
| CN105870203B (en) * | 2016-06-24 | 2019-05-10 | 京东方科技集团股份有限公司 | A kind of thin film transistor and its preparation method, array substrate, display device |
| CN109997213A (en) | 2016-09-28 | 2019-07-09 | 堺显示器制品株式会社 | Laser anneal device and laser anneal method |
| US11004682B2 (en) | 2016-12-15 | 2021-05-11 | Sakai Display Products Corporation | Laser annealing apparatus, laser annealing method, and mask |
| USD944655S1 (en) | 2019-11-29 | 2022-03-01 | Jirasak Rattanapaibooncharoen | Double cup carrier |
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| KR101713360B1 (en) | 2017-03-22 |
| KR20120033353A (en) | 2012-04-06 |
| WO2011010611A1 (en) | 2011-01-27 |
| TWI509810B (en) | 2015-11-21 |
| TW201115742A (en) | 2011-05-01 |
| JP5470519B2 (en) | 2014-04-16 |
| JP2011029411A (en) | 2011-02-10 |
| KR20170017008A (en) | 2017-02-14 |
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