CN102569559A - Method for manufacturing an array of light emitting elements - Google Patents
Method for manufacturing an array of light emitting elements Download PDFInfo
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- CN102569559A CN102569559A CN2012100149430A CN201210014943A CN102569559A CN 102569559 A CN102569559 A CN 102569559A CN 2012100149430 A CN2012100149430 A CN 2012100149430A CN 201210014943 A CN201210014943 A CN 201210014943A CN 102569559 A CN102569559 A CN 102569559A
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- 238000000034 method Methods 0.000 title claims abstract description 24
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 17
- 239000004065 semiconductor Substances 0.000 claims abstract description 36
- 239000000758 substrate Substances 0.000 claims abstract description 31
- 238000005229 chemical vapour deposition Methods 0.000 claims description 6
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 6
- 238000005566 electron beam evaporation Methods 0.000 claims description 4
- 238000005240 physical vapour deposition Methods 0.000 claims 2
- 238000007772 electroless plating Methods 0.000 claims 1
- 238000001017 electron-beam sputter deposition Methods 0.000 claims 1
- 238000009713 electroplating Methods 0.000 claims 1
- 230000004888 barrier function Effects 0.000 description 18
- 238000003475 lamination Methods 0.000 description 14
- 239000000463 material Substances 0.000 description 10
- 239000010949 copper Substances 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- 238000007747 plating Methods 0.000 description 4
- 229910010271 silicon carbide Inorganic materials 0.000 description 4
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 239000004411 aluminium Substances 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 238000009413 insulation Methods 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 239000004925 Acrylic resin Substances 0.000 description 2
- 229920000178 Acrylic resin Polymers 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 229920000089 Cyclic olefin copolymer Polymers 0.000 description 2
- 239000004697 Polyetherimide Substances 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- FTWRSWRBSVXQPI-UHFFFAOYSA-N alumanylidynearsane;gallanylidynearsane Chemical compound [As]#[Al].[As]#[Ga] FTWRSWRBSVXQPI-UHFFFAOYSA-N 0.000 description 2
- UMIVXZPTRXBADB-UHFFFAOYSA-N benzocyclobutene Chemical compound C1=CC=C2CCC2=C1 UMIVXZPTRXBADB-UHFFFAOYSA-N 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 229910003460 diamond Inorganic materials 0.000 description 2
- 239000010432 diamond Substances 0.000 description 2
- 229920002313 fluoropolymer Polymers 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 238000009616 inductively coupled plasma Methods 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 239000011156 metal matrix composite Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 2
- 229920001601 polyetherimide Polymers 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 239000004926 polymethyl methacrylate Substances 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- ANVRDUDUNKHRMI-UHFFFAOYSA-N C1CCC1.[F] Chemical compound C1CCC1.[F] ANVRDUDUNKHRMI-UHFFFAOYSA-N 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 1
- 229910010093 LiAlO Inorganic materials 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000011153 ceramic matrix composite Substances 0.000 description 1
- HPNSNYBUADCFDR-UHFFFAOYSA-N chromafenozide Chemical compound CC1=CC(C)=CC(C(=O)N(NC(=O)C=2C(=C3CCCOC3=CC=2)C)C(C)(C)C)=C1 HPNSNYBUADCFDR-UHFFFAOYSA-N 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- ONIHPYYWNBVMID-UHFFFAOYSA-N diethyl benzene-1,4-dicarboxylate Chemical compound CCOC(=O)C1=CC=C(C(=O)OCC)C=C1 ONIHPYYWNBVMID-UHFFFAOYSA-N 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- HZXMRANICFIONG-UHFFFAOYSA-N gallium phosphide Chemical compound [Ga]#P HZXMRANICFIONG-UHFFFAOYSA-N 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 239000012774 insulation material Substances 0.000 description 1
- 229910001947 lithium oxide Inorganic materials 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 239000000741 silica gel Substances 0.000 description 1
- 229910002027 silica gel Inorganic materials 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
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Abstract
The invention discloses a method for manufacturing a light-emitting element array, which comprises the following steps: providing a substrate; forming a light emitting stack on the substrate, wherein the light emitting stack comprises: a first semiconductor layer located on the substrate; a light emitting layer on the first semiconductor layer; and a second semiconductor layer located on the light-emitting layer; forming at least one groove on the substrate, wherein the groove exposes part of the substrate and separates the light-emitting laminated layer into at least one first light-emitting element and at least one second light-emitting element; and forming an insulating layer on the light-emitting laminated layer and the groove, wherein the width of the groove is not more than twice the thickness of the insulating layer.
Description
The application is that application number is 200810169439.1, denomination of invention is divided an application for the application for a patent for invention of " making the method for light-emitting device array ".
Technical field
The present invention relates to a kind of manufacturing approach of light-emitting device array, particularly relate to a kind of light-emitting device array with insulating barrier closed groove.
Background technology
Light-emitting diode (Light Emitting Diode; LED) be a kind of solid-state physics semiconductor element, light emitting diode matrix (LED Array) has a plurality of LED, does suitable serial or parallel connection on demand.Before serial or parallel connection, need to form earlier groove to distinguish at a distance from each LED, then between groove and LED, form insulating barrier with each LED of electric insulation, form electric connection line again on insulating barrier and be electrically connected the electrode of each LED, to reach serial or parallel connection.Yet because the size impact of groove, for example the degree of depth of groove is too dark, can occur breaking or being electrically connected bad phenomenon when causing on the sidewall of groove, forming electric connection line.Known solution is to adopt the thickness that increases electric connection line to fill up groove or intactly to cover on the trenched side-wall, to reach good electrical connection; But the thickness that increases electric connection line also increases production cost simultaneously.
Summary of the invention
A kind of method of making light-emitting device array comprises: substrate is provided; Form luminous being stacked on this substrate, wherein this luminous lamination comprises: first semiconductor layer is positioned on this substrate; Luminescent layer is positioned on this first semiconductor layer; And second semiconductor layer, be positioned on this luminescent layer; Form at least one groove on this substrate, this this substrate of groove exposed portion wherein, and should be separated at least one first light-emitting component and second light-emitting component by luminous lamination; And forming insulating barrier on this luminous lamination and this groove, the width of this groove is not more than the thickness of this insulating barrier of twice.
A kind of method of making light-emitting device array, comprising provides substrate; Form luminous being stacked on the substrate, wherein luminous lamination comprises first semiconductor layer, is positioned on the substrate; Luminescent layer is positioned on first semiconductor layer; And second semiconductor layer, be positioned on the luminescent layer.Remove the luminous lamination of part to form at least one groove, groove exposed portion substrate wherein, and luminous lamination is divided into first light-emitting component and second light-emitting component.Remove second semiconductor layer of part first light-emitting component and second semiconductor layer and the luminescent layer of the luminescent layer and second light-emitting component, with first semiconductor layer of exposed portion first light-emitting component and first semiconductor layer of second light-emitting component.Then form second electrode on second semiconductor layer, with first electrode on first semiconductor layer that exposes.Form insulating barrier on luminous lamination and groove, insulating barrier roughly closed groove and exposes first electrode and second electrode with at least one cavity of formation among groove.Form electric connection line and be electrically connected first electrode of first light-emitting component and second electrode of second light-emitting component.
A kind of light-emitting device array comprises substrate; First light-emitting component is positioned on the substrate; Second light-emitting component is positioned on the substrate; At least one groove is separated first light-emitting component and second light-emitting component; And insulating barrier, roughly closed groove is to form at least one cavity among groove.
Description of drawings
Fig. 1 is for showing the manufacturing process profile according to the light-emitting device array of the embodiment of the invention.
Fig. 2 is for showing the profile according to the groove of the embodiment of the invention.
Fig. 3 is for showing the profile according to the groove of another embodiment of the present invention.
Fig. 4 is for showing the profile according to the groove of another embodiment of the present invention.
Fig. 5 is the sketch map that shows the light-source generation device of the light-emitting device array composition that utilizes the embodiment of the invention.
Fig. 6 is the sketch map that shows the backlight module of the light-emitting device array composition that utilizes the embodiment of the invention.
Description of reference numerals
1: light-emitting device array 10: substrate
12: 122: the first semiconductor layers of luminous lamination
124: 126: the second semiconductor layers of luminescent layer
14: groove 142,144,146: cavity
16: 15: the first electrodes of insulating barrier
11: the first light-emitting components of 17: the second electrodes
Light-emitting component 2 in 13: the second: light-source generation device
21: light source 22: power system
23: control element 3: backlight module
31: optical element 18: electric connection line
W: width t: thickness
Embodiment
As shown in Figure 1, the wafer of light-emitting diode 1 is provided, comprise substrate 10; Luminous lamination 12 is formed on the substrate 10, and wherein luminous lamination 12 comprises first semiconductor layer 122, active layer 124 and second semiconductor layer 126 at least.Remove the luminous lamination 12 of part to form groove 14, groove 14 exposed portion substrates 10 wherein, and luminous lamination 12 is separated into first light-emitting component 11 and second light-emitting component 13, the mode that removes comprises but is not limited to etching.Second semiconductor layer 126 that removes part first light-emitting component 11 and second light-emitting component 13 and luminescent layer 124 are with exposed portion first semiconductor layer 122, and the mode that wherein removes comprises but is not limited to inductive coupling type plasma etching (Inductively Coupled Plasma; ICP).The upper surface of first semiconductor layer 122 of groove 14 both sides is rough at same horizontal plane at this moment; Promptly the distance of the upper surface of the distance of the upper surface of first semiconductor layer 122 of first light-emitting component 11 and substrate 10 and first semiconductor layer 122 of second light-emitting component 13 and substrate 10 is approximately identical, also or the height of groove 14 both sides sidewalls is rough to be equated.Form the upper surface of first electrode 15 then, with the upper surface of second electrode 17 at second semiconductor layer 126 at first semiconductor layer 122.Then form insulating barrier 16 on groove 14, first light-emitting component 11 and second light-emitting component 13; But expose first electrode 15 and second electrode 17, wherein the generation type of insulating barrier 16 comprises but is not limited to electron beam evaporation plating method (E-Gun), sputtering method (Sputtering) or plasma enhanced chemical vapor deposition method (PECVD).Form electric connection line 18 at last on insulating barrier 16; With first electrode 15 that is electrically connected first light-emitting component 11 and second electrode 17 of second light-emitting component 13; Wherein the generation type of electric connection line 18 comprises vapor deposition, chemical plating or plating, physical vaporous deposition (PVD) for example, chemical vapour deposition technique (CVD); Metalorganic chemical vapor deposition method (MOCVD), electron beam evaporation plating method (E-Gun) or plasma enhanced chemical vapor deposition method (PECVD).As shown in Figure 2, roughly closed groove 14 is to form cavity 142 among groove 14 for insulating barrier 16, and wherein the width w of groove 14 is not more than the twice of the thickness t of the insulating barrier 16 on first semiconductor layer 122.Insulating barrier has the characteristic that side direction is grown up when forming; In other words; Insulating layer material growth speed in the horizontal direction is greater than the growth speed of vertical direction; Make insulating barrier 16 closed groove 14 roughly when forming, prevent that electric connection line 18 is formed on the sidewall of groove 14, avoid broken string or be electrically connected bad.
The material of substrate 10 comprises but is not limited to copper (Cu), tungsten (W), aluminium nitride (AlN), metal-base composites (Metal Matrix Composite; MMC), ceramic matric composite (Ceramic Matrix Composite; CMC), carborundum (SiC), aluminium (Al), silicon (Si), diamond (Diamond), Aluminum gallium arsenide (AlGaAs), gallium phosphide (GaP), aluminium nitride (AlN), lithia aluminium (LiAlO
2), carborundum (SiC), zinc oxide (ZnO), indium phosphide (InP), aluminium nitride (AlN), sapphire (Sapphire), glass (Glass), the combination of other transparent materials or these materials.The material of substrate 10 is preferably electrical insulating material, if electric conducting material, the electric insulation layer (not shown) is formed between substrate 10 and the luminous lamination 12 with electric insulation first light-emitting component 11 and second light-emitting component 13.
The material of luminous lamination 12 comprises but is not limited to one or more material, like gallium (Ga), aluminium (Al), indium (In), arsenic (As), phosphorus (P), nitrogen (N) or silicon (Si).The material of insulating barrier 16 is an electrical insulating material, for example polyimides (PI), mistake fluorine cyclobutane (PFCB), spin-coating glass, Su8, benzocyclobutene (BCB), epoxy resin (Epoxy), acrylic resin (Acrylic Resin), cyclic olefin polymer (COC), polymethyl methacrylate (PMMA), poly terephthalic acid diethylester (PET), Merlon (PC), PEI (Polyetherimide), fluorocarbon polymer (Fluorocarbon Polymer), silica gel (Silicone), glass, aluminium oxide (Al
2O
3), silicon nitride (SiN
x), silica (SiO
2), titanium oxide (TiO
2), combination or other transparent insulation materials of above-mentioned material.The material of electric connection line 18 is an electric conducting material, for example the combination of gold (Au), copper (Cu), nickel (Ni) or above-mentioned material.
Like Fig. 3 and shown in Figure 4; Groove 14 can comprise groove a plurality of times; Being insulated layer 16, to cover and roughly seal its opening a plurality of empty 142,144 and 146 to form, and wherein the width w of each time groove is not more than the thickness t of the insulating barrier 16 on twice first semiconductor layer 122.
Fig. 5 shows the light-source generation device sketch map.Light-source generation device 2 can be a lighting device, and for example street lamp, car light or room lighting light source also can be the back lights of backlight module in traffic sign or the flat-panel screens.Light-source generation device 2 comprises light source 21, can be light-emitting device array among the arbitrary embodiment of the present invention, power system 22 with supply light source 21 electric currents and control element 23, in order to control power system 22.
Fig. 6 shows the backlight module generalized section.Backlight module 3 comprises the light-source generation device 2 in the previous embodiment, and optical element 31.Optical element 31 can be handled the light that is sent by light-source generation device 2, to be applied to flat-panel screens, and scattering light source generation device 2 issued lights for example.
Only the foregoing description is merely illustrative principle of the present invention and effect thereof, but not is used to limit the present invention.Any persons skilled in the art all can be under the situation of know-why of the present invention and spirit, and the foregoing description is made amendment and changed.Therefore rights protection scope of the present invention as after the claim stated listed.
Claims (10)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210014943.0A CN102569559B (en) | 2008-10-22 | 2008-10-22 | Method for manufacturing an array of light emitting elements |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210014943.0A CN102569559B (en) | 2008-10-22 | 2008-10-22 | Method for manufacturing an array of light emitting elements |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2008101694391A Division CN101728322B (en) | 2008-10-22 | 2008-10-22 | Method for manufacturing an array of light emitting elements |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102569559A true CN102569559A (en) | 2012-07-11 |
| CN102569559B CN102569559B (en) | 2015-05-13 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201210014943.0A Active CN102569559B (en) | 2008-10-22 | 2008-10-22 | Method for manufacturing an array of light emitting elements |
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| Country | Link |
|---|---|
| CN (1) | CN102569559B (en) |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW425658B (en) * | 1999-09-02 | 2001-03-11 | United Microelectronics Corp | Manufacturing method of shallow trench isolation structure |
| TWI270223B (en) * | 2005-11-21 | 2007-01-01 | Epistar Corp | A method of making a light emitting element |
| CN100418242C (en) * | 2006-05-17 | 2008-09-10 | 广州南科集成电子有限公司 | LED manufacturing method |
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2008
- 2008-10-22 CN CN201210014943.0A patent/CN102569559B/en active Active
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| CN102569559B (en) | 2015-05-13 |
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