CN102540112B - Single chip pull-push bridge type magnetic field sensor - Google Patents
Single chip pull-push bridge type magnetic field sensor Download PDFInfo
- Publication number
- CN102540112B CN102540112B CN201110326725.6A CN201110326725A CN102540112B CN 102540112 B CN102540112 B CN 102540112B CN 201110326725 A CN201110326725 A CN 201110326725A CN 102540112 B CN102540112 B CN 102540112B
- Authority
- CN
- China
- Prior art keywords
- magnetic field
- field sensor
- permanent magnet
- magnetization
- bridge
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Ceased
Links
- 230000005291 magnetic effect Effects 0.000 title claims abstract description 122
- 230000005415 magnetization Effects 0.000 claims abstract description 60
- 230000008859 change Effects 0.000 claims description 7
- 230000000694 effects Effects 0.000 claims description 6
- 230000001154 acute effect Effects 0.000 claims description 2
- 238000009413 insulation Methods 0.000 claims description 2
- 239000000758 substrate Substances 0.000 abstract description 2
- 238000010586 diagram Methods 0.000 description 12
- 238000000034 method Methods 0.000 description 11
- 238000005516 engineering process Methods 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 230000008901 benefit Effects 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000005755 formation reaction Methods 0.000 description 3
- 238000004093 laser heating Methods 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 230000035945 sensitivity Effects 0.000 description 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 238000004806 packaging method and process Methods 0.000 description 2
- 229920006395 saturated elastomer Polymers 0.000 description 2
- 230000005355 Hall effect Effects 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 239000003302 ferromagnetic material Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 230000005381 magnetic domain Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000004576 sand Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 230000005641 tunneling Effects 0.000 description 1
Images
Landscapes
- Measuring Magnetic Variables (AREA)
- Hall/Mr Elements (AREA)
Abstract
The invention relates to a magnetic field sensor, in particular to a single chip pull-push bridge type magnetic field sensor with a permanent magnet arranged on the periphery of a (magnetic tunnel junction) MTJ element. By arranging the direction of the permanent magnet, the included angle in the magnetization directions of two free layers can be preset, and the two free layers have different response to the same sensitive direction. The single chip pull-push bridge type magnetic field sensor can be prepared on a single substrate through one-step filming. Simultaneously, the magnetization directions of the free layers can be preset or calibrated by arranging an electrified coil.
Description
Technical field
This invention relates to the sensor that a kind of detection of magnetic field is used, and is especially a kind of single chip pull-push bridge type magnetic field sensor.
Background technology
Magnetic sensor is mainly used in direction, intensity and the position sensing in magnetic field.It is low that the push-pull bridge magnetic field sensor that the magneto-resistor of take is sensitive element has skew, highly sensitive and advantage that temperature stability is good.Magnetic tunnel junction element (MTJ, Magnetic Tunnel Junction) be a kind of magnetoresistive element that starts in recent years commercial Application, that it utilizes is the tunneling magnetoresistance (TMR of Researches for Magnetic Multilayer Films, Tunnel Magnetoresistance), the resistance that main manifestations is magnetoresistive element changes with the variation of the size and Orientation in outfield.The magnetic field sensor that the MTJ element of take is sensing element is than the AMR(anisotropic-magnetoresistance effect of current widespread use) element, Hall effect material and GMR(giant magnetoresistance effect) magnetic field sensor made of element has highly sensitive, low in energy consumption, the linearity is good, wide dynamic range, good temp characteristic, the advantage that antijamming capability is strong, in addition, MTJ element can also be integrated in existing chip micro fabrication easily, is convenient to make the integrated magnetic field sensor that volume is very little.
Push-pull bridge sensor has than single resistance, with reference to the higher sensitivity of bridge type magnetic sensor, has temperature compensation function simultaneously, can suppress the impact of temperature drift.Traditional MTJ or GMR push-pull type bridge type magnetic sensor require the pinning layer direction of magnetization of the spin valve elements in adjacent two arm resistances contrary, and be conventionally deposited on same on-chip MTJ or GMR element, because its magnetic moment needed magnitude of field intensity of overturning is identical, therefore conventionally all identical in the pinning layer direction of magnetization of same on-chip magnetic element, this makes to make push-pull bridge sensor and has very large difficulty.Making to recommend at present stays the method for bridge type magnetic sensor to mainly contain:
(1) twice film-forming process: deposit respectively at twice MTJ or GMR element that pinning layer direction of magnetization is contrary.The method complex manufacturing technology, the film that when technique is annealed for the second time simultaneously, obviously impact deposits for the first time.This makes the consistance of twice film forming in front and back poor, causes the resistance of the different brachium pontis of bridge type magnetic sensor not identical, affects the overall performance of sensor;
(2) multi-chip package technology: the magneto-resistor of getting two high conformities from same wafer or different wafer, the sensitive direction identical (pinning layer direction of magnetization is identical) of these two magneto-resistors, then 180 ° of one of them relative another magneto-resistor upsets are carried out to multi-chip package, form push-pull type half-bridge.The method can realize the function of push-pull type half-bridge, has improved detection sensitivity, has temperature compensation function, but multi-chip package on the other hand, package dimension is large, and production cost is high; Can not be strict during actual package carry out 180 ° of upsets, the sensitive direction of two resistance is not strict differ 180 °, the output characteristics that two electrical resistance outfields are changed is not identical, occur that sensitivity is different, there is the larger asymmetry problems such as bias voltage, will bring new problem so in actual applications;
(3) the local inversion method of the auxiliary magnetic domain of LASER HEATING: while conventionally preparing MTJ or GMR full-bridge on substrate, adopt MTJ or GMR wafer are annealed and made the pinning layer direction of magnetization of different brachium pontis identical in same high-intensity magnetic field.Adopt afterwards laser to carry out the auxiliary magnetic moment upset of spot heating to wafer, make the pinning layer direction of magnetization of the adjacent brachium pontis of bridge type magnetic sensor contrary, thereby realize the bridge type magnetic sensor of one chip.The method needs specialized equipment, and apparatus expensive has increased process complexity, the prepared bridge type magnetic sensor of while LASER HEATING, and the resistance consistance of its each brachium pontis also cannot be guaranteed.
As can be seen from the above, existing single chip bridge type sensor all exists overall performance to guarantee, the shortcomings such as production cost height.
Summary of the invention
The invention provides a kind of can manufacture on a large scale, can be according to a kind of single chip pull-push bridge type magnetic field sensor of application demand design, it comprises the magnetoresistive element that a plurality of bridge-types connect, each magnetoresistive element comprises the sensitive element with sensitive direction, sensitive element is MTJ element, AMR element or GMR element, and the both sides of described each magnetoresistive element are provided with a pair of permanent magnet for the direction of magnetization of described magnetoresistive element is setovered.
Preferably, the length of each permanent magnet be greater than this to the width between permanent magnet the marginalisation effect to reduce to produce between every pair of permanent magnet.
Preferably, each permanent magnet has the boundary edge of close corresponding magnetoresistive element, and the sensitive direction of this boundary edge and described single chip pull-push bridge type magnetic field sensor is an angle, and this angle is acute angle or obtuse angle.
Preferably, the permanent magnet that is positioned at magnetoresistive element both sides produces a permanent magnet bias field, and this permanent magnet bias field has a permanent magnet bias direction.
Preferably, by the thickness of permanent magnet being set with the intensity of change permanent magnet bias field.
Preferably, each permanent magnet has the boundary edge of close corresponding magnetoresistive element, by angle that the magnetizing direction of permanent magnet and the boundary edge of described permanent magnet become being set to change the intensity of permanent magnet bias field.
Preferably, described this has the shape that produces even magnetic bias field to permanent magnet.
Preferably, between described magnetoresistive element, be arranged mutually parallel.
Preferably, the surrounding of described magnetoresistive element is provided with for hot-wire coil default and calibration output offset, insulation mutually between described magnetoresistive element and hot-wire coil.
Accompanying drawing explanation
Fig. 1 is the schematic diagram of a tunnel junction magneto-resistor (MTJ) element.
Fig. 2 is the desirable output curve diagram of MTJ element.
Fig. 3 is that MTJ element is connected and the schematic diagram of an equivalent MTJ magneto-resistor of formation.
Fig. 4 is the output map of the relative direction of magnetization of magnetic free layer and pinned magnetic layer.
Fig. 5 is the design diagram that adopts two strip permanent magnet biasing free layer direction of magnetization.
Fig. 6 adopts can the setover design diagram of free layer direction of magnetization of permanent magnet and shape anisotropy.
Fig. 7 is a kind of design idea of recommending half-bridge magnetic field sensor.
Fig. 8 is a kind of design idea of recommending full-bridge magnetic field sensor.
Fig. 9 is a kind of schematic layout pattern of recommending full-bridge magnetic field sensor.
Figure 10 is that sensitive direction is perpendicular to the analog result of recommending bridge design and output thereof of easy axis direction.
Figure 11 is the analog result of recommending bridge design and output thereof that sensitive direction is parallel to easy axis direction.
Figure 12 is preset and is calibrated the design diagram of free layer direction of magnetization by hot-wire coil.
Figure 13 is preset and is calibrated the layout of recommending bridge magnetic field sensor of free layer direction of magnetization by hot-wire coil.
Embodiment
Below in conjunction with one of accompanying drawing 1-13, preferred embodiment of the present invention is described in detail, thereby so that advantages and features of the invention can be easier to be those skilled in the art will recognize that, protection scope of the present invention is made to more explicit defining.
Fig. 1 is the schematic diagram of a tunnel junction magneto-resistor (MTJ) element.The MTJ element 1 of a standard comprises magnetic free layer 6, the tunnel barrier layer 5 between pinned magnetic layer 2 and two magnetospheres.Magnetic free layer 6 consists of ferromagnetic material, and the direction of magnetization 7 of magnetic free layer changes with the change of external magnetic field.Pinned magnetic layer 2 is the magnetospheres that direction of magnetization is fixing, and the direction of magnetization 8 of pinned magnetic layer is pinned at a direction, at general condition, can not change.Pinned magnetic layer is deposited iron magnetosphere 4 formations above or below inverse ferric magnetosphere 3 normally.Mtj structure is normally deposited on the top of the Seed Layer 16 of conduction, the top of mtj structure is upper electrode layer 17 simultaneously, and the measured resistance value 18 between MTJ element Seed Layer 16 and upper electrode layer 17 represents the relative direction of magnetization between magnetic free layer 6 and pinned magnetic layer 2.
Fig. 2 is the desirable output curve diagram of MTJ element, and curve of output is saturated when low resistance state 20 and high-impedance state 21, R
land R
hrepresent respectively the resistance of low resistance state 20 and high-impedance state 21.When the direction of magnetization 7 of magnetic free layer and the direction of magnetization 8 of pinned magnetic layer are when parallel, the measured resistance value 18 of whole element is at low resistance state 20; When the direction of magnetization 7 of magnetic free layer and direction of magnetization 8 antiparallel of pinned magnetic layer, the measured resistance value 18 of whole element is at high-impedance state 21.By known technology, the resistance of MTJ element 1 can be along with externally-applied magnetic field linear change between high-impedance state and low resistance state, saturation field-H
sand H
sbetween magnetic field range be exactly the measurement range of MTJ element.
Fig. 3 is that MTJ element is connected and the schematic diagram of an equivalent MTJ magneto-resistor of formation.The MTJ element string being together in series can reduce noise, improves the stability of sensor.In MTJ magneto-resistor, the bias voltage of each MTJ element 1 reduces with the increase of magnetic tunnel-junction quantity.The reduction of electric current need to produce a large Voltage-output, thereby has reduced shot noise, along with the ESD stability that has also strengthened sensor simultaneously that increases of magnetic tunnel-junction.In addition, along with the noise that increases MTJ magneto-resistor of MTJ element 1 quantity correspondingly reduces, this be because each independently the mutual incoherent random behavior of MTJ element on average fallen.
Fig. 4 is the output map of the relative direction of magnetization of magnetic free layer and pinned magnetic layer.As shown in the figure, the direction of magnetization 7 of magnetic free layer and the direction of magnetization 8 of pinned magnetic layer are an angle α, as can be seen from the figure, under the outer field action of same sensitive direction 9, the MTJ element of different angles α can have different responders to.By the direction of different permanent magnet bias-field 10 is set, make the direction of magnetization 8 of pinned magnetic layer of one group of MTJ element identical with angle α, direction of magnetization 7 differences of magnetic free layer, when magnetoresistive element is applied to an outfield, outfield along the component of sensitive direction 9, make this group magnetoresistive element magnetic free layer direction of magnetization 7 switched in opposite direction---the direction of magnetization 7(of a magnetic free layer is as shown in Fig. 4 solid arrow) be more prone to the direction of magnetization 8 of pinned magnetic layer, now the resistance of element reduces; The direction of magnetization 7(of another magnetic free layer is as shown in Fig. 4 dotted arrow simultaneously) away from the direction of magnetization 8 of pinned magnetic layer, now the resistance of element raises.Therefore, this design can make magnetoresistive element produce contrary responder to.
Fig. 5 is the design diagram that adopts two strip permanent magnet biasing free layer direction of magnetization, wherein every permanent magnet has suitable length 12 to avoid the edge effect on magnet border with respect to magnet gap 13, and after magnetizing in the same direction, the direction of magnetic bias field 10 is perpendicular to the surface of permanent magnet.
Fig. 6 adopts can the setover design diagram of free layer direction of magnetization of permanent magnet and shape anisotropy, in fact the direction of magnetization 7 of magnetic free layer depend on shape anisotropy can and the combination that acts on of magnetic bias field 10.The shape of magnetoresistive element can be rectangle, rhombus or ellipse conventionally, shape anisotropy can make free layer direction of magnetization trend towards the long axis direction of magnetoresistive element, by the shape of element is set, be the intensity that the ratio of major axis and minor axis can preset shape anisotropy energy, the direction of magnetization 7 of the magnetic free layer of magnetoresistive element be shape anisotropy can and the competition results of magnetic bias field 10.The intensity-dependent of magnetic bias field 10 is in the density of magnet surface magnetic charge, magnetizing direction 11 and perpendicular to the direction at interface 14 the closer to, the density that Surface Charge is piled up is just larger.The density of Surface Charge and sin θ are directly proportional, and wherein angle θ is the angle of permanent magnet interface 14 and magnetizing direction 11.By adjusting magnetic bias field 10 and shape anisotropy, can be able to preset the angle α of magnetoresistive element, in this design, the direction of magnetization 8 of sensitive direction 9 and pinned magnetic layer is vertical.
Fig. 7 is a kind of design idea of recommending half-bridge magnetic field sensor.As shown in the figure, magneto-resistor R11 and R12 form a half-bridge, the angle α size of two magneto-resistors is identical, the direction of magnetization 8 of pinned magnetic layer is identical, the direction of magnetization 7 of magnetic free layer is pointed to different, and the direction of magnetization 7 of magnetic free layer depends on the combination of shape anisotropy energy and magnetic bias field 10 effects.When to recommending half bridge sensor while applying an outfield along sensitive direction 9 forwards, the direction of magnetization 7 of the magnetic free layer of magneto-resistor R11 levels off to the direction of magnetization 8 of pinned magnetic layer, and its resistance correspondingly reduces; The direction of magnetization 7 of the magnetic free layer of R12 is away from the direction of magnetization 8 of pinned magnetic layer simultaneously, and its resistance correspondingly increases, at constant voltage V
bIASeffect under, output end voltage V
oUTthere is corresponding variation, form and recommend half-bridge.
The biasing means of recommending half-bridge magnetic field sensor is: as shown in Figure 7, along 11 pairs of magnetizing directions, recommend half-bridge and apply a high-intensity magnetic field, remove after external magnetic field, the virtual magnetic charge at 14 places, 10You border, 13Chu magnetic field, gap between permanent magnet 15 produces, perpendicular to border 14, its concrete biased direction is as shown in the arrow 10 of Fig. 7.
Fig. 8 is a kind of design idea of recommending full-bridge magnetic field sensor.As shown in the figure, magneto-resistor R21, R22, R23, R24 full-bridge connect, the angle α size of each magneto-resistor is identical, the direction of magnetization 8 of pinned magnetic layer is identical, and the direction of magnetization 7 of the magnetic free layer of the magneto-resistor of relative position (R21 and R23, R22 and R24) is identical, the magneto-resistor of adjacent position (R21 and R22, R22 and R23, R23 and R24, R24 and R21) direction of magnetization 7 differences of magnetic free layer.When to recommending half bridge sensor while applying an outfield along sensitive direction 9 forwards, the direction of magnetization 7 of the magnetic free layer of magneto-resistor R21, R23 levels off to the direction of magnetization 8 of pinned magnetic layer, and its resistance correspondingly reduces; The direction of magnetization 7 of the magnetic free layer of R22, R24 is away from the direction of magnetization 8 of pinned magnetic layer simultaneously, and its resistance correspondingly increases, at constant voltage V
bIASeffect under, there is corresponding variation in voltage between output terminal V1 and V2, forms and recommend full-bridge.In the ideal case, if the resistance of resistance R 21 and R23 becomes (R1+ Δ R) from R1, the resistance of corresponding R22 and R24 becomes (R2-Δ R) from R2, is output as:
（1）
Ideally, R1=R2 > Δ R, can obtain after abbreviation:
（2）
Realize the output of recommending full-bridge.
The biasing means of recommending full-bridge magnetic field sensor is: as shown in Figure 8, along 11 pairs of magnetizing directions, recommend full-bridge and apply a high-intensity magnetic field, remove after external magnetic field, the virtual magnetic charge at 14 places, 10You border, 13Chu magnetic field, gap between permanent magnet 15 produces, perpendicular to border 14, its concrete biased direction is as shown in the arrow 10 of Fig. 8.
The direction of magnetization 8 of the pinned magnetic layer of recommending bridge sensor shown in Fig. 7 and Fig. 8 is identical, can on same chip, by one-time process, directly form and recommend full-bridge sensors, do not need to adopt multi-chip package technique, do not need to carry out the local auxiliary heat annealing of LASER HEATING yet.
Fig. 9 is a kind of schematic layout pattern of recommending full-bridge magnetic field sensor.As shown in the figure, several MTJ elements 1 are together in series as an equivalent magneto-resistor, after magnetizing, the free layer that the permanent magnet 15 of MTJ element 1 both sides is element provides 10 pairs of free layer direction of magnetization 7 of magnetic bias field to setover, and its sensitive direction 9 is perpendicular to pinning layer direction of magnetization 8.The pad 23 of sensor can be connected on the packaging pin of ASIC integrated circuit or lead frame by lead-in wire.
Figure 10 is that sensitive direction is perpendicular to the analog result of recommending bridge design and output thereof of easy axis direction.Two output maps of top are the curve of output of magneto-resistor of the adjacent position of saturation field 50 Oe and 100 Oe, and two output maps of below are the full-bridge curve of output of saturation field 50 Oe and 100 Oe.
Figure 11 is the analog result of recommending bridge design and output thereof that sensitive direction is parallel to easy axis direction.Two output maps of top are the curve of output of magneto-resistor of the adjacent position of saturation field 50 Oe and 100 Oe, and two output maps of below are the full-bridge curve of output of saturation field 50 Oe and 100 Oe.
Conventionally in actual measurement, the curve of output of MTJ is not ideal curve as shown in Figure 2, has certain skew, needs that it is applied to outfield and makes it saturated, thereby carry out its off-set value of calibration measurement in practical operation.The design of Figure 12 arranges hot-wire coil 22 above magnetoresistive element, the magnetic field that utilizes hot-wire coil 22 to produce applies an outfield to free layer, this design can realize the default and calibration to output offset after chip preparation encapsulation, have very large handlingly, the demand that can use according to reality be carried out consistency operation.As shown in the figure, the live width that produces the wire of calibration field is 5 μ m, and the wire live width reverse with calibration current is 3 μ m, and the gap width between wire is 2.5 μ m.
Figure 13 is preset and is calibrated the layout of recommending bridge magnetic field sensor of free layer direction of magnetization by hot-wire coil.As shown in the figure, the pad 23 of sensor can be connected on the packaging pin of ASIC integrated circuit or lead frame by lead-in wire.The input and output side that pad 24 is hot-wire coil.
Above specific embodiment of the present invention is illustrated in conjunction with diagram, clearly, is not leaving on the basis of scope and spirit of the present invention, can much revise prior art and technique.Under of the present invention, in technical field, the common knowledge of a GPRS, just can, within the scope of technology main idea of the present invention, carry out diversified change.
Claims (9)
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110326725.6A CN102540112B (en) | 2011-04-06 | 2011-10-25 | Single chip pull-push bridge type magnetic field sensor |
| US14/009,912 US9664754B2 (en) | 2011-04-06 | 2012-04-01 | Single chip push-pull bridge-type magnetic field sensor |
| PCT/CN2012/073495 WO2012136134A1 (en) | 2011-04-06 | 2012-04-01 | Single-chip push-pull bridge-type magnetic field sensor |
| EP12767718.5A EP2696209B1 (en) | 2011-04-06 | 2012-04-01 | Single-chip push-pull bridge-type magnetic field sensor |
| JP2014502976A JP2014512003A (en) | 2011-04-06 | 2012-04-01 | Single-chip push-pull bridge type magnetic field sensor |
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110084595.X | 2011-04-06 | ||
| CN201120097042.3 | 2011-04-06 | ||
| CN2011200970423U CN202013413U (en) | 2011-04-06 | 2011-04-06 | Single chip bridge type magnetic field sensor |
| CN201110084595XA CN102226836A (en) | 2011-04-06 | 2011-04-06 | Single-chip bridge magnetic field sensor and preparation method thereof |
| CN201110326725.6A CN102540112B (en) | 2011-04-06 | 2011-10-25 | Single chip pull-push bridge type magnetic field sensor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102540112A CN102540112A (en) | 2012-07-04 |
| CN102540112B true CN102540112B (en) | 2014-04-16 |
Family
ID=45483406
Family Applications (3)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 201120409446 Expired - Lifetime CN202421483U (en) | 2011-04-06 | 2011-10-25 | Single-chip push-pull bridge-type magnetic field sensor |
| CN201110326725.6A Ceased CN102540112B (en) | 2011-04-06 | 2011-10-25 | Single chip pull-push bridge type magnetic field sensor |
| CN 201110326762 Ceased CN102331564B (en) | 2011-04-06 | 2011-10-25 | Single chip bridge magnetic field sensor and preparation method thereof |
Family Applications Before (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 201120409446 Expired - Lifetime CN202421483U (en) | 2011-04-06 | 2011-10-25 | Single-chip push-pull bridge-type magnetic field sensor |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 201110326762 Ceased CN102331564B (en) | 2011-04-06 | 2011-10-25 | Single chip bridge magnetic field sensor and preparation method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (3) | CN202421483U (en) |
Families Citing this family (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN202421483U (en) * | 2011-04-06 | 2012-09-05 | 江苏多维科技有限公司 | Single-chip push-pull bridge-type magnetic field sensor |
| CN202013413U (en) | 2011-04-06 | 2011-10-19 | 江苏多维科技有限公司 | Single chip bridge type magnetic field sensor |
| CN102226836A (en) * | 2011-04-06 | 2011-10-26 | 江苏多维科技有限公司 | Single-chip bridge magnetic field sensor and preparation method thereof |
| CN102565727B (en) * | 2012-02-20 | 2016-01-20 | 江苏多维科技有限公司 | For measuring the magnetic resistance sensor in magnetic field |
| WO2015010105A1 (en) * | 2013-07-19 | 2015-01-22 | Invensense, Inc. | Application specific integrated circuit with integrated magnetic sensor |
| CN103592608B (en) * | 2013-10-21 | 2015-12-23 | 江苏多维科技有限公司 | A kind of push-pull bridge type magnetic sensor for high-intensity magnetic field |
| CN104301851B (en) | 2014-07-14 | 2018-01-26 | 江苏多维科技有限公司 | TMR near fields magnetic communication system |
| CN104569870B (en) * | 2015-01-07 | 2017-07-21 | 江苏多维科技有限公司 | A kind of single-chip has the z axis magnetic resistance sensor of calibration/replacement coil |
| CN105093139B (en) * | 2015-06-09 | 2017-11-24 | 江苏多维科技有限公司 | A kind of push-pull type X-axis magnetic resistance sensor |
| CN108983125A (en) * | 2017-06-01 | 2018-12-11 | 深迪半导体(上海)有限公司 | A kind of magnetoresistive sensor |
| CN112289922B (en) * | 2019-07-22 | 2023-05-30 | 中电海康集团有限公司 | Magnetic sensor and method for manufacturing the same |
| CN110824392B (en) * | 2019-10-23 | 2025-01-10 | 珠海多创科技有限公司 | A TMR full-bridge magnetic sensor and its preparation method |
| CN111044953B (en) * | 2020-01-06 | 2025-01-03 | 珠海多创科技有限公司 | Single chip full bridge TMR magnetic field sensor |
| CN113030804B (en) * | 2021-03-01 | 2022-12-23 | 歌尔微电子股份有限公司 | Sensor and electronic device |
| CN113466759B (en) * | 2021-06-30 | 2023-06-13 | 山东大学 | Single-axis and double-axis magnetoresistive magnetic field sensor and manufacturing method |
| CN115079061A (en) * | 2022-05-05 | 2022-09-20 | 歌尔微电子股份有限公司 | Micro-electro-mechanical system differential magnetic sensor, sensor monomer and electronic equipment |
| CN117250571B (en) * | 2023-09-18 | 2024-08-30 | 苏州纳芯微电子股份有限公司 | High-precision magnetic field sensing device and motion sensor |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2830621B1 (en) * | 2001-10-09 | 2004-05-28 | Commissariat Energie Atomique | STRUCTURE FOR SENSOR AND MAGNETIC FIELD SENSOR |
| JP4016857B2 (en) * | 2002-10-18 | 2007-12-05 | ヤマハ株式会社 | Magnetic sensor and manufacturing method thereof |
| US7016163B2 (en) * | 2003-02-20 | 2006-03-21 | Honeywell International Inc. | Magnetic field sensor |
| JP4557134B2 (en) * | 2004-03-12 | 2010-10-06 | ヤマハ株式会社 | Manufacturing method of magnetic sensor, magnet array used in manufacturing method of magnetic sensor, and manufacturing method of magnetic array |
| CN1688035A (en) * | 2005-06-09 | 2005-10-26 | 上海交通大学 | Magnetosensitive device based on huge magneto impedance effect of micro mechanoelectric system |
| JP5170679B2 (en) * | 2008-01-29 | 2013-03-27 | 日立金属株式会社 | Magnetic sensor and rotation angle detection device |
| CN101672903B (en) * | 2009-09-23 | 2011-09-14 | 电子科技大学 | Preparation method of Wheatstone bridge type spin valve magnetic sensor |
| CN202421483U (en) * | 2011-04-06 | 2012-09-05 | 江苏多维科技有限公司 | Single-chip push-pull bridge-type magnetic field sensor |
| CN102226836A (en) * | 2011-04-06 | 2011-10-26 | 江苏多维科技有限公司 | Single-chip bridge magnetic field sensor and preparation method thereof |
-
2011
- 2011-10-25 CN CN 201120409446 patent/CN202421483U/en not_active Expired - Lifetime
- 2011-10-25 CN CN201110326725.6A patent/CN102540112B/en not_active Ceased
- 2011-10-25 CN CN 201110326762 patent/CN102331564B/en not_active Ceased
Also Published As
| Publication number | Publication date |
|---|---|
| CN202421483U (en) | 2012-09-05 |
| CN102540112A (en) | 2012-07-04 |
| CN102331564B (en) | 2013-02-13 |
| CN102331564A (en) | 2012-01-25 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN102540112B (en) | Single chip pull-push bridge type magnetic field sensor | |
| CN102590768B (en) | Magneto-resistance magnetic field gradient sensor | |
| US9664754B2 (en) | Single chip push-pull bridge-type magnetic field sensor | |
| CN102385043B (en) | Magnetic tunnel junction (MTJ) triaxial magnetic field sensor and packaging method thereof | |
| JP6403326B2 (en) | Current sensor | |
| JP6189426B2 (en) | Magnetoresistive gear sensor | |
| JP6509231B2 (en) | Single-chip reference bridge magnetic sensor for high magnetic fields | |
| CN103412269B (en) | Single-chip push-pull bridge type magnetic field sensor | |
| EP2696211A1 (en) | Single chip bridge magnetic field sensor and preparation method thereof | |
| CN102435963B (en) | Monolithic dual-axis bridge-type magnetic field sensor | |
| WO2012142915A1 (en) | Single-chip reference full-bridge magnetic field sensor | |
| CN103323796B (en) | A kind of MTJ magnetic field sensor using Graphene as barrier layer | |
| CN111044953B (en) | Single chip full bridge TMR magnetic field sensor | |
| CN203587785U (en) | Single-chip push-pull bridge type magnetic field sensor | |
| JP2014515470A (en) | Single chip 2-axis bridge type magnetic field sensor | |
| WO2015058632A1 (en) | Push-pull bridge-type magnetic sensor for high-intensity magnetic fields | |
| JP2015513667A (en) | Magnetoresistive sensor for measuring magnetic fields | |
| WO2014190907A1 (en) | Single-chip bridge-type magnetic field sensor | |
| JP2017502298A5 (en) | ||
| CN202210144U (en) | Single-chip reference full-bridge magnetic field sensor | |
| CN203658561U (en) | Single-chip reference bridge type magnetic sensor for high-intensity magnetic field | |
| CN202794487U (en) | Magneto-resistor magnetic field gradient sensor | |
| CN212008887U (en) | Single-chip full-bridge TMR magnetic field sensor | |
| CN202210145U (en) | MTJ triaxial magnetic field sensor |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| IW01 | Full invalidation of patent right | ||
| IW01 | Full invalidation of patent right |
Decision date of declaring invalidation: 20240509 Decision number of declaring invalidation: 568696 Granted publication date: 20140416 |