CN202210145U - MTJ triaxial magnetic field sensor - Google Patents
MTJ triaxial magnetic field sensor Download PDFInfo
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- CN202210145U CN202210145U CN 201120320031 CN201120320031U CN202210145U CN 202210145 U CN202210145 U CN 202210145U CN 201120320031 CN201120320031 CN 201120320031 CN 201120320031 U CN201120320031 U CN 201120320031U CN 202210145 U CN202210145 U CN 202210145U
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- 230000005291 magnetic effect Effects 0.000 title claims abstract description 236
- 239000000758 substrate Substances 0.000 claims abstract description 10
- 230000001154 acute effect Effects 0.000 claims abstract description 6
- 229910000679 solder Inorganic materials 0.000 claims description 6
- 230000003044 adaptive effect Effects 0.000 claims description 3
- 241000218202 Coptis Species 0.000 claims description 2
- 235000002991 Coptis groenlandica Nutrition 0.000 claims description 2
- 238000005476 soldering Methods 0.000 claims description 2
- 230000035945 sensitivity Effects 0.000 abstract description 9
- 239000011248 coating agent Substances 0.000 abstract 3
- 238000000576 coating method Methods 0.000 abstract 3
- 239000010410 layer Substances 0.000 description 56
- 238000000034 method Methods 0.000 description 24
- 238000010586 diagram Methods 0.000 description 13
- 238000012856 packing Methods 0.000 description 13
- 230000008859 change Effects 0.000 description 11
- 238000013461 design Methods 0.000 description 11
- 238000002360 preparation method Methods 0.000 description 11
- 230000000694 effects Effects 0.000 description 8
- 238000005516 engineering process Methods 0.000 description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 230000008901 benefit Effects 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 5
- 238000005755 formation reaction Methods 0.000 description 5
- 238000000137 annealing Methods 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 3
- 238000010168 coupling process Methods 0.000 description 3
- 238000005859 coupling reaction Methods 0.000 description 3
- 238000004093 laser heating Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 230000004888 barrier function Effects 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 230000005294 ferromagnetic effect Effects 0.000 description 2
- 230000003993 interaction Effects 0.000 description 2
- 239000011229 interlayer Substances 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- 230000005381 magnetic domain Effects 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 238000012536 packaging technology Methods 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- 230000005355 Hall effect Effects 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 230000001143 conditioned effect Effects 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000005347 demagnetization Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 239000003302 ferromagnetic material Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000000523 sample Substances 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 230000005641 tunneling Effects 0.000 description 1
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Abstract
Disclosed is an MTJ triaxial magnetic field sensor, comprising an X-axis bridge type magnetic field sensor with X axis as the sensitive direction, a Y-axis bridge type magnetic field sensor with Y axis as the sensitive direction, a Z-axis magnetic field sensor with Z axis as the sensitive direction, and an ASIC chip connected with and matched to the X-axis bridge type magnetic field sensor, the Y-axis bridge type magnetic field sensor, and the Z-axis magnetic field sensor, wherein the Z-axis magnetic field sensor comprises a substrate and an MTJ element formed upon the substrate; the Z-axis magnetic field sensor is coated upon the ASIC chip to form a coating edge; the side edge of the Z-axis magnetic field sensor adjacent to the coating edge and the coating edge form an included angle, with the included angle being an acute angle or an obtuse angle; and the X axis, Y axis and Z axis are in pairwise orthogonal. With the above structure, the MTJ triaxial magnetic field sensor features high integrated level, high sensitivity, lower power consumption, better linearity, wider dynamic scope, better temperature characteristic, and stronger anti-interference capability.
Description
Technical field
the present invention relates to a kind of design of magnetic field sensor, specifically a kind of MTJ three-axle magnetic field sensor and method for packing thereof.
Background technology
tunnel junction magnetic resistance sensor (MTJ; Magnetic Tunnel Junction) is the novel magnetoresistance effect sensor that begins commercial Application in recent years; That it utilizes is the tunneling magnetoresistance (TMR of magnetoresistance effect material; Tunnel Magnetoresistance), mainly show in the magnetoresistance effect material variation, the resistance generation significant change of magnetoresistance effect along with the external magnetic field size and Orientation; It than before institute finds that the AMR (anisotropic magnetoresistance) of also practical application has bigger resistance change rate, the while has better temperature stability with respect to the Hall effect material.It is big that the MTJ magnetic field sensor has a resistance change rate, and the output signal amplitude is big, and resistivity is high, and is low in energy consumption, the advantage that temperature stability is high.It is higher that the magnetic field sensor of processing with MTJ has sensitivity than AMR, GMR, hall device, and power consumption is lower, and linear better, dynamic range is wideer, and temperature characterisitic is better, the advantage that antijamming capability is stronger.MTJ also can easily be integrated in the middle of the existing chip micro fabrication in addition, is convenient to process the very little integrated magnetic field sensor of volume.
multiaxis magnetic field sensor usually have the integrated level higher than single-axis sensors, and better orthogonality can be applied to multiaxis or vector sensor occasion very easily.And magnetic field itself is exactly a vector field; Thereby the multiaxis magnetic field probe has very widely and to use, electronic compass particularly, and magnetic surveys etc. all adopt twin shaft or three-axle magnetic field to measure; Therefore; Produce, integrated level is high, and one chip multiaxis magnetic field sensor is a kind of very demand of reality.
are deposited on the MTJ element on the same silicon chip usually; Needed magnitude of field intensity is identical because its magnetic moment overturns; Thereby the MTJ element on same silicon chip; After annealing, the pinning layer DOM is all identical usually, and this makes that making the push-pull bridge sensor exists very big difficulty.At present the GMR three-axis sensor of main flow is that GMR magnetic field sensor with the X of three chips, Y, Z axle is packaged together and realizes that volume is big, and packaging cost is high, and it is low to have sensitivity than the MTJ magnetic field sensor, shortcomings such as power consumption height.
can be found out from above method, and the three-axle magnetic field sensor of existing employing AMR, Hall, GMR element has shortcomings such as volume is big, and power consumption is high, and sensitivity is low, and MTJ three-axle magnetic field sensor is difficult to realize in design.
Summary of the invention
to the problems referred to above, the present invention provides a kind of MTJ three-axle magnetic field sensor, and this MTJ three-axle magnetic field transducer sensitivity is high, and small size is high integrated, low-power consumption.
a kind of MTJ three-axle magnetic field sensor; The Z axle magnetic field sensor that sensitive direction is the X axle bridge-type magnetic field sensor of X axle, Y axle bridge-type magnetic field sensor that sensitive direction is the Y axle, sensitive direction is the Z axle, be connected and adaptive asic chip with said Z axle magnetic field sensor with said X axle bridge-type magnetic field sensor, said Y axle bridge-type magnetic field sensor; Said Z axle magnetic field sensor comprises the magnetic sensing chip of connection; Said magnetic sensing chip comprises substrate and is prepared in this on-chip MTJ element; Said magnetic sensing chip pastes on asic chip and to form one and paste the limit; Paste the limit and form an angle with pasting the adjacent side in limit and this on the said magnetic sensing chip, this angle is acute angle or obtuse angle, wherein X axle, Y axle and Z axle pairwise orthogonal.
preferably, said X axle bridge-type magnetic field sensor is the MTJ magnetic resistance sensor.
preferably, said Y axle bridge-type magnetic field sensor is the MTJ magnetic resistance sensor.
preferably, said X axle bridge-type magnetic field sensor can be electrically connected with said asic chip through gold thread with said Y axle bridge-type magnetic field sensor mutually.
preferably, said X axle bridge-type magnetic field sensor can be electrically connected with said asic chip through the soldering ball with said Y axle bridge-type magnetic field sensor mutually.
preferably, said X axle bridge-type magnetic field sensor and integrated being arranged on the same chip of said Y axle bridge-type magnetic field sensor.
preferably, said X axle bridge-type magnetic field sensor is with reference to the bridge-type magnetic field sensor, said Y axle bridge-type magnetic field sensor is the push-pull bridge magnetic field sensor.
preferably, said magnetic sensing chip is electrically connected with said asic chip through solder ball mutually.
preferably, said Z axle magnetic field sensor comprises two or four MTJ magnetic sensing chips, said MTJ magnetic sensing chip symmetry arrangement is on asic chip.
For solving the problems of the technologies described above, the technical scheme that the present invention adopts is:
the present invention adopts above structure, and integrated level is high, and sensitivity is higher, and power consumption is lower, and linear better, dynamic range is wideer, and temperature characterisitic is better, and antijamming capability is stronger.
Description of drawings
Fig. 1 is the synoptic diagram of a tunnel junction magneto-resistor (MTJ) element.
Fig. 2 is the desirable output curve diagram of MTJ element.
Fig. 3 is a MTJ element connected in series and form the synoptic diagram of MTJ magneto-resistor.
Fig. 4 is the synoptic diagram that a kind of MTJ recommends full-bridge sensors.
Fig. 5 is the analog result of recommending the curve of output of full-bridge.
Fig. 6 is the synoptic diagram of a kind of MTJ with reference to full-bridge sensors.
Fig. 7 is the analog result of recommending the curve of output of full-bridge.
Fig. 8 is the synoptic diagram of disposable preparation one chip MTJ twin shaft magnetic field sensor.
Fig. 9 is the first step of first kind of method for packing of Z axle magnetic field sensor.
Figure 10 is second step of first kind of method for packing of Z axle magnetic field sensor.
Figure 11 is the 3rd step of first kind of method for packing of Z axle magnetic field sensor.
Figure 12 is the 4th step of first kind of method for packing of Z axle magnetic field sensor.
Figure 13 is the first step of second kind of method for packing of Z axle magnetic field sensor.
Figure 14 is second step of second kind of method for packing of Z axle magnetic field sensor.
Figure 15 is the 3rd step of second kind of method for packing of Z axle magnetic field sensor.
Figure 16 is the 4th step of second kind of method for packing of Z axle magnetic field sensor.
Figure 17 is the structural representation of the MTJ three-axle magnetic field sensor of first kind of method for packing of employing of the present invention.
Figure 18 is the structural representation of the MTJ three-axle magnetic field sensor of second kind of method for packing of employing of the present invention.
In
accompanying drawing: 1, MTJ element; 2, pinned magnetic layer; 3, inverse ferric magnetosphere; 4, ferromagnetic layer; 5, tunnel barrier layer; 6, magnetic free layer; 7, the DOM of magnetic free layer; 8, the DOM of pinned magnetic layer; 9, externally-applied magnetic field; 10, sensitive direction; 11, Seed Layer; 12, upper electrode layer; 13, measured resistance value; 14, low resistance state; 15, high-impedance state; 16, direction of current; 17, permanent magnet; 18, substrate; 19, asic chip; 20, solder ball; 21, paste the limit; 22, side; 23, angle; 24, MTJ magnetic sensing chip; 25, X axle bridge-type magnetic field sensor; 26, Y axle bridge-type magnetic field sensor; 27, Z axle magnetic field sensor; 41, the DOM of the magnetic free layer of R1; 42, the DOM of the magnetic free layer of R2; 43, the DOM of the magnetic free layer of R3; 44, the DOM of the magnetic free layer of R4.
Embodiment
Set forth preferred embodiment of the present invention below in conjunction with one of accompanying drawing 1-18 in detail
; Thereby protection scope of the present invention is made more explicit defining so that advantage of the present invention and characteristic can be easier to those skilled in the art will recognize that.
The general introduction of tunnel junction magneto-resistor:
Fig. 1 is the synoptic diagram of a tunnel junction magneto-resistor (MTJ) element.The MTJ element 1 of a standard comprises magnetic free layer 6, the tunnel barrier layer 5 between pinned magnetic layer 2 and two magnetospheres.Magnetic free layer 6 is made up of ferromagnetic material, and the DOM 7 of magnetic free layer changes with the change of external magnetic field.Pinned magnetic layer 2 is the fixing magnetospheres of a DOM, and the DOM 8 of pinned magnetic layer is pinned at a direction, can not change at general condition.Pinned magnetic layer is deposited iron magnetosphere 4 formations above or below inverse ferric magnetosphere 3 normally.Mtj structure normally is deposited on the top of the Seed Layer 11 of conduction; The top of mtj structure is a upper electrode layer 12 simultaneously, and the measured resistance value 13 between MTJ element Seed Layer 11 and the upper electrode layer 12 is represented the relative DOM between magnetic free layer 6 and the pinned magnetic layer 2.
Fig. 2 is the desirable output curve diagram of MTJ element, and curve of output is saturated when low resistance state 14 and high-impedance state 15, R
L
And R
H
Represent the resistance of low resistance state 14 and high-impedance state 15 respectively.When the DOM of the DOM 7 of magnetic free layer and pinned magnetic layer 8 was parallel, the measured resistance value 13 of whole element was at low resistance state; When DOM 8 antiparallels of the DOM of magnetic free layer 7 and pinned magnetic layer, the measured resistance value 13 of whole element is at high-impedance state 15.Through known technology, the resistance of MTJ element 1 can change saturation field-H along with externally-applied magnetic field is linear between high-impedance state and low resistance state
s
And H
s
Between magnetic field range be exactly the measurement range of MTJ element.
Fig. 3 is a MTJ element connected in series and form the synoptic diagram of MTJ magneto-resistor.The MTJ element 1 that is together in series forms the MTJ magneto-resistor and can reduce noise, improves the stability of sensor.In the MTJ magneto-resistor, the bias voltage of each MTJ element 1 reduces with the increase of magnetic tunnel-junction quantity.The reduction of electric current need produce a big voltage output, thereby has reduced shot noise, along with the ESD that increasing of magnetic tunnel-junction also strengthened sensor simultaneously is stable.In addition, along with the noise that increases the MTJ magneto-resistor of MTJ element 1 quantity correspondingly reduces, this be because each independently the mutual incoherent random behavior of MTJ element on average fallen.
Recommend the design of full-bridge sensors:
Fig. 4 is the synoptic diagram that a kind of MTJ recommends full-bridge sensors.Four magneto-resistor R1, R2, R3, R4 full-bridges connect, and each magneto-resistor is composed in series (like Fig. 2) by one or more MTJ elements 1.The magnetic moment direction of the pinned magnetic layer of four MTJ elements 1 is identical; The magnetic free layer DOM of each magnetoresistive element and pinned magnetic layer DOM are an angle theta (can for 30 ° to 90 ° between); And this angle theta size of each magnetoresistive element is identical, is positioned at the magnetic free layer DOM identical (41 and 43 of the magnetoresistive element (R1 and R3, R2 and R4) of relative position; 42 and 44); Be positioned at the DOM different (41 and 42,43 and 44) of magnetic free layer of the magnetoresistive element (R1 and R2, R3 and R4) of adjacent position.The sensitive direction 10 of this full bridge structure is perpendicular to the DOM 8 of pinned magnetic layer.The DOM 8 of the pinned magnetic layer of this design is identical, can on same chip, recommend full-bridge sensors through direct formation of one-time process, need not adopt multicore sheet packaging technology, also need not carry out the local auxiliary heat annealing of LASER HEATING.
are when to recommending full-bridge sensors when applying an outfield; Two other is in the magneto-resistor R2 of relative position and the resistance of R4 can correspondingly reduce when along the magnetic-field component of sensitive direction 10 magneto-resistor R1 and the R3 resistance of relative position being increased; The resistance of R2 and R4 can correspondingly increase when the direction in change outfield can make R1 and R3 resistance reduce;---a pair of resistance increases another resistance is reduced---can increase the response of bridge circuit like this to use the multiple measurement outfield of two pairs of magneto-resistors that opposite response is arranged, and therefore is called as " push-pull type " bridge circuit.In the ideal case, if the resistance of resistance R 1 and R3 becomes (R1+ Δ R) by R1, the resistance of then corresponding R2 and R4 becomes (R2-Δ R) by R2, then is output as:
（1）
Under the ideal situation, R1=R2＞Δ R then can get behind the abbreviation:
（2）
The output of full-bridge is promptly realized recommending in
, and the analog result of its curve of output is seen Fig. 5.
The angle of magnetic free layer and pinned magnetic layer can be realized by the combination of following mode or following mode:
(1) shape anisotropy ability: utilize the anisotropy energy of MTJ element 1 that magnetic free layer DOM is setovered, the major axis of MTJ element 1 is an easy magnetizing axis, through the axial ratio that element is set its shape anisotropic can be set;
(2) permanent magnet biasing: around MTJ element 1, permanent magnet is set this free love layer DOM is setovered;
(3) electric current line biasing: on MTJ element 1 upper strata or lower floor's plated metal lead produce magnetic field, thereby realize biasing to magnetic free layer DOM;
(4) Nai Er coupling: utilize the Nai Er coupled field between pinned magnetic layer and magnetic free layer that magnetic free layer DOM is setovered;
(5) are exchange biased: this technology is to create one effectively perpendicular to the outfield of sensitive direction through the exchange-coupling interaction of MTJ element 1 free layer and adjacent weak inverse ferric magnetosphere.Can reduce exchange biased intensity at the separation layer that free layer and exchange biased interlayer are provided with Cu or Ta.
Design with reference to full-bridge sensors:
Fig. 6 is the synoptic diagram of a kind of MTJ with reference to full-bridge sensors.Four MTJ magneto-resistor R1, R2, R3, R4 full-bridges connect, and each MTJ magneto-resistor is composed in series (like Fig. 2) by one or more MTJ elements 1.Wherein the curve of output of R1 and R3 relies on externally-applied magnetic field 9 strongly, is called as sensing arm, depends on externally-applied magnetic field 9 a little less than the curve of output of corresponding with it R2 and R4, is called as reference arm.The sensitive direction 10 of this full bridge structure is parallel to the DOM 8 of pinned magnetic layer.The pinned magnetic layer direction of this design is identical, can on same chip, recommend full-bridge sensors through direct formation of one-time process, need not adopt multicore sheet packaging technology, also need not carry out the local auxiliary heat annealing of LASER HEATING.
are when to recommending full-bridge sensors when applying an outfield; Sensing arm R1 and R3 resistance are increased or reduce along the magnetic-field component of sensitive direction 10; And that reference arm magneto-resistor R2 and R4 change in the saturation field Hs of sensing arm magneto-resistor scope is very little; Under actual conditions, MTJ is enough wide with reference to the range of linearity of full-bridge sensors, and the analog result of its curve of output is seen Fig. 7.
For making up with reference to bridge type magnetic sensor, the very important point is the sensitivity that reference arm is set
.The sensitivity of magnetoresistive element is defined as the resistance function of resistance with the effect variation of externally-applied magnetic field:
The magnetic resistance that reference arm and relevant with it sensing arm are reduced in
is unpractiaca, so the best mode of the sensitivity of change is change Hs.This can be that combination by following one or more diverse ways realizes:
(1) magnetic shielding: the high magnetic permeability ferromagnetic layer is deposited on the reference arm to weaken the effect of externally-applied magnetic field;
(2) shape anisotropy ability: because reference element and sensing element have different sizes therefore to have different shape anisotropy abilities.The most general way is to make the long axis length of the long axis length of reference element greater than the MTJ sensing element, and minor axis length is less than the minor axis length of sensing element, thus reference element be parallel to the demagnetization effects of sensitive direction will be much larger than sensing element;
(3) are exchange biased: this technology is to create one effectively perpendicular to the outfield of sensitive direction through the exchange-coupling interaction of MTJ element free layer and adjacent weak inverse ferric magnetosphere.Can reduce exchange biased intensity at the separation layer that free layer and exchange biased interlayer are provided with Cu or Ta;
(4) end of a performance biasing: in this technology, permanent-magnet alloys such as Fe, Co, Cr and Pt are deposited on sensing element surface or the magnetic tunnel-junction, are used to provide the curve of output of magnetic field with biasing MTJ element that loose.An advantage of permanent magnet bias is to constitute big magnetic field initialization permanent magnet of later use at electric bridge.The very important advantage of another one is that bias-field can be eliminated the output of the magnetic domain of MTJ element with stable and linearization MTJ element 1.The great advantages of this design is that it has very big dirigibility in the design adjustment.
The design of one chip MTJ twin shaft magnetic field sensor:
are deposited on MTJ element 1 on the same silicon chip usually needed magnitude of field intensity are identical because its magnetic moment overturns, thereby the magnetoresistive element on same silicon chip, and after annealing, the pinning layer DOM is all identical usually.Usually the twin shaft magnetic field sensor can be 90 ° of angles combinations by two bridge-type magnetic field sensors and is provided with and realizes, below we will set forth the realization of the twin shaft magnetic field sensor of one chip.The design of one chip MTJ twin shaft magnetic field sensor can realize through the combination of following method or several method:
method one: the local inversion method of the auxiliary magnetic domain of LASER HEATING.The MTJ element annealed in same high-intensity magnetic field make the nailed layer magnetic moment direction of different brachium pontis identical.Adopt laser that silicon chip is carried out the auxiliary magnetic moment upset of spot heating afterwards, thereby realize preparation twin shaft magnetic field sensor on the single silicon chip in ground;
method two: adopt repeatedly film-forming process, deposit the different magnetoresistive element of nailed layer direction several times respectively.
method three: disposable preparation one chip twin shaft magnetic field sensor.Fig. 8 is the synoptic diagram of disposable preparation one chip MTJ twin shaft magnetic field sensor.Sensitive direction be the MTJ of Y axle to recommend full-bridge sensors and sensitive direction be that the MTJ of X axle adopts identical operation to be prepared from same substrate with reference to full-bridge sensors, the DOM of pinned magnetic layer is same direction.
The three-axle magnetic field Design of Sensor:
a kind of MTJ three-axle magnetic field sensor; The Z axle magnetic field sensor 27 that sensitive direction is the X axle bridge-type magnetic field sensor 25 of X axle, Y axle bridge-type magnetic field sensor 26 that sensitive direction is the Y axle, sensitive direction is the Z axle, be connected and adaptive asic chip 19 with Z axle magnetic field sensor 27 with said X axle bridge-type magnetic field sensor 25, said Y axle bridge-type magnetic field sensor 26; Said Z axle magnetic field sensor 27 is electrically connected by magnetic sensing chip 24 and forms; Said magnetic sensing chip 24 comprises the MTJ element 1 on substrate 18 and this substrate 18; Said magnetic sensing chip 24 pastes on asic chip 19 and to form one and paste limit 21; Paste 21 formation, one angle 23 in limit with pasting limit 21 adjacent sides 22 with this on the said magnetic sensing chip 24, this angle 23 is acute angle or obtuse angle, wherein X axle, Y axle and Z axle pairwise orthogonal.Wherein the effect of asic chip 19 is conditioned signal.
said X axle bridge-type magnetic field sensor 25 and said Y axle bridge-type magnetic field sensor 26 integrated being arranged on the same chip.Said X axle bridge-type magnetic field sensor 25 is the MTJ magnetic resistance sensor.Said Y axle bridge-type magnetic field sensor 26 is the MTJ magnetic resistance sensor.Said X axle bridge-type magnetic field sensor 25 is with reference to the bridge-type magnetic field sensor, and said Y axle bridge-type magnetic field sensor 26 is the push-pull bridge magnetic field sensor.
said magnetic sensing chip 24 is electrically connected with said asic chip 19 through solder ball 20 mutually.
said Z axle magnetic field sensor 27 comprises two or four said magnetic sensing chips 24, and said MTJ magnetic sensing chip 24 symmetry arrangement are on asic chip 19.
shown in accompanying drawing 17, the method for packing of first kind of MTJ three-axle magnetic field sensor, A) the preparation sensitive direction is the X axle bridge-type magnetic field sensor 25 of X axle, and links to each other with asic chip 19; B) the preparation sensitive direction is the Y axle bridge-type magnetic field sensor 26 of Y axle, and links to each other with asic chip 19; C) preparation MTJ element 1 forms wafer (shown in accompanying drawing 9) on substrate 18; This wafer is carried out oblique cutting form MTJ magnetic sensing chip 24 (shown in accompanying drawings 10); MTJ magnetic sensing chip 24 pasted on asic chip 19 form one and paste limit 21 (shown in accompanying drawing 11); Pasting limit 21 and pasting limit 21 adjacent sides of this MTJ magnetic sensing chip 24 forms an angle 23; This angle 23 is acute angle or obtuse angle, through solder ball 20 MTJ magnetic sensing chip 24 is realized being connected fixing (shown in accompanying drawing 12) with asic chip 19, and MTJ magnetic sensing chip 24 is electrically connected forms Z axle magnetic field sensor 27.
The MTJ bridge-type magnetic field sensor chip (like Fig. 4 and Fig. 6) that
said MTJ magnetic sensing chip 24 can be disposable preparation also can be that MTJ magneto-resistor (like Fig. 3) chip connects into the bridge-type magnetic field sensor.
shown in accompanying drawing 18, the method for packing of second kind of MTJ three-axle magnetic field sensor, A) the preparation sensitive direction is the X axle bridge-type magnetic field sensor 25 of X axle, and links to each other with asic chip 19; B) the preparation sensitive direction is the Y axle bridge-type magnetic field sensor 26 of Y axle, and links to each other with asic chip 19; C) deposition MTJ magneto-resistor 24 is prepared into wafer (shown in accompanying drawing 13) on substrate 18; The formation inclined-plane is corroded at the back side of this wafer; Again this wafer is cut into MTJ magnetic sensing chip 24 (like accompanying drawing 14 and shown in Figure 15); MTJ magnetic sensing chip 24 pasted on asic chip 19 form one and paste limit 21, the limit 21 that pastes of this MTJ magnetic sensing chip 24 forms an angle 23 with pasting the adjacent side in limit 22, and this angle 23 is acute angle or obtuse angle; Through solder ball 20 MTJ magnetic sensing chip 24 is realized being connected fixing (shown in accompanying drawing 16) with asic chip 19, MTJ magnetic sensing chip 24 is electrically connected forms Z axle magnetic field sensor 27.
The MTJ bridge-type magnetic field sensor chip (like Fig. 4 and Fig. 6) that
said MTJ magnetic sensing chip 24 can be disposable preparation also can be MTJ magneto-resistor (like a Fig. 3) chip.
are above to combine diagram to be illustrated to specific embodiment of the present invention, clearly, on the basis of not leaving scope of the present invention and spirit, can much revise prior art and technology.In the technical field, the common knowledge of a GPRS just can be carried out diversified change in technological main idea scope of the present invention under of the present invention.
Claims (9)
1. MTJ three-axle magnetic field sensor; It is characterized in that: the Z axle magnetic field sensor that sensitive direction is the X axle bridge-type magnetic field sensor of X axle, Y axle bridge-type magnetic field sensor that sensitive direction is the Y axle, sensitive direction is the Z axle, be connected and adaptive asic chip with said Z axle magnetic field sensor with said X axle bridge-type magnetic field sensor, said Y axle bridge-type magnetic field sensor; Said Z axle magnetic field sensor comprises the magnetic sensing chip of connection; Said magnetic sensing chip comprises substrate and is prepared in this on-chip MTJ element; Said magnetic sensing chip pastes on asic chip and to form one and paste the limit; Paste the limit and form an angle with pasting the adjacent side in limit and this on the said magnetic sensing chip, this angle is acute angle or obtuse angle, wherein X axle, Y axle and Z axle pairwise orthogonal.
2. MTJ three-axle magnetic field sensor according to claim 1 is characterized in that: said X axle bridge-type magnetic field sensor is the MTJ magnetic resistance sensor.
3. MTJ three-axle magnetic field sensor according to claim 1 is characterized in that: said Y axle bridge-type magnetic field sensor is the MTJ magnetic resistance sensor.
4. MTJ three-axle magnetic field sensor according to claim 1 is characterized in that: said X axle bridge-type magnetic field sensor can be electrically connected with said asic chip through gold thread with said Y axle bridge-type magnetic field sensor mutually.
5. MTJ three-axle magnetic field sensor according to claim 1 is characterized in that: said X axle bridge-type magnetic field sensor can be electrically connected with said asic chip through the soldering ball with said Y axle bridge-type magnetic field sensor mutually.
6. MTJ three-axle magnetic field sensor according to claim 1 is characterized in that: said X axle bridge-type magnetic field sensor and integrated being arranged on the same chip of said Y axle bridge-type magnetic field sensor.
7. MTJ three-axle magnetic field sensor according to claim 4 is characterized in that: said X axle bridge-type magnetic field sensor is that said Y axle bridge-type magnetic field sensor is the push-pull bridge magnetic field sensor with reference to the bridge-type magnetic field sensor.
8. MTJ three-axle magnetic field sensor according to claim 1 is characterized in that: said magnetic sensing chip is electrically connected with said asic chip through solder ball mutually.
9. MTJ three-axle magnetic field sensor according to claim 1 is characterized in that: said Z axle magnetic field sensor comprises two or four MTJ magnetic sensing chips, and said MTJ magnetic sensing chip symmetry arrangement is on asic chip.
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102385043A (en) * | 2011-08-30 | 2012-03-21 | 江苏多维科技有限公司 | Magnetic tunnel junction (MTJ) triaxial magnetic field sensor and packaging method thereof |
| WO2013029510A1 (en) * | 2011-08-30 | 2013-03-07 | 江苏多维科技有限公司 | Tri-axis magnetic field sensor |
-
2011
- 2011-08-30 CN CN 201120320031 patent/CN202210145U/en not_active Expired - Lifetime
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102385043A (en) * | 2011-08-30 | 2012-03-21 | 江苏多维科技有限公司 | Magnetic tunnel junction (MTJ) triaxial magnetic field sensor and packaging method thereof |
| WO2013029510A1 (en) * | 2011-08-30 | 2013-03-07 | 江苏多维科技有限公司 | Tri-axis magnetic field sensor |
| WO2013029512A1 (en) * | 2011-08-30 | 2013-03-07 | 江苏多维科技有限公司 | Mtj three-axis magnetic field sensor and encapsulation method thereof |
| CN102385043B (en) * | 2011-08-30 | 2013-08-21 | 江苏多维科技有限公司 | Magnetic tunnel junction (MTJ) triaxial magnetic field sensor and packaging method thereof |
| US9733316B2 (en) | 2011-08-30 | 2017-08-15 | Multidemension Technology Co., Ltd. | Triaxial magnetic field sensor |
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