[go: up one dir, main page]

CN102482540A - 用于超声波粘合的各向异性导电粘合剂、和使用其的电子部件连接方法 - Google Patents

用于超声波粘合的各向异性导电粘合剂、和使用其的电子部件连接方法 Download PDF

Info

Publication number
CN102482540A
CN102482540A CN2010800405436A CN201080040543A CN102482540A CN 102482540 A CN102482540 A CN 102482540A CN 2010800405436 A CN2010800405436 A CN 2010800405436A CN 201080040543 A CN201080040543 A CN 201080040543A CN 102482540 A CN102482540 A CN 102482540A
Authority
CN
China
Prior art keywords
particles
electrode
anisotropic conductive
conductive adhesive
polymer resin
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CN2010800405436A
Other languages
English (en)
Other versions
CN102482540B (zh
Inventor
白京煜
李技元
金承镐
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Korea Advanced Institute of Science and Technology KAIST
Original Assignee
Korea Advanced Institute of Science and Technology KAIST
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Korea Advanced Institute of Science and Technology KAIST filed Critical Korea Advanced Institute of Science and Technology KAIST
Publication of CN102482540A publication Critical patent/CN102482540A/zh
Application granted granted Critical
Publication of CN102482540B publication Critical patent/CN102482540B/zh
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J9/00—Adhesives characterised by their physical nature or the effects produced, e.g. glue sticks
    • C09J9/02—Electrically-conducting adhesives
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J11/00—Features of adhesives not provided for in group C09J9/00, e.g. additives
    • C09J11/08—Macromolecular additives
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J5/00—Adhesive processes in general; Adhesive processes not provided for elsewhere, e.g. relating to primers
    • C09J5/02—Adhesive processes in general; Adhesive processes not provided for elsewhere, e.g. relating to primers involving pretreatment of the surfaces to be joined
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J5/00—Adhesive processes in general; Adhesive processes not provided for elsewhere, e.g. relating to primers
    • C09J5/06—Adhesive processes in general; Adhesive processes not provided for elsewhere, e.g. relating to primers involving heating of the applied adhesive
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K7/00—Use of ingredients characterised by shape
    • C08K7/16—Solid spheres
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2203/00—Applications of adhesives in processes or use of adhesives in the form of films or foils
    • C09J2203/326—Applications of adhesives in processes or use of adhesives in the form of films or foils for bonding electronic components such as wafers, chips or semiconductors
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2301/00—Additional features of adhesives in the form of films or foils
    • C09J2301/40—Additional features of adhesives in the form of films or foils characterized by the presence of essential components
    • C09J2301/416—Additional features of adhesives in the form of films or foils characterized by the presence of essential components use of irradiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/16227—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation the bump connector connecting to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/291—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29101—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
    • H01L2224/29111—Tin [Sn] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29199—Material of the matrix
    • H01L2224/2929—Material of the matrix with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298—Fillers
    • H01L2224/29299—Base material
    • H01L2224/293—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298—Fillers
    • H01L2224/29299—Base material
    • H01L2224/293—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29301—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
    • H01L2224/29311—Tin [Sn] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298—Fillers
    • H01L2224/29299—Base material
    • H01L2224/293—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29301—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
    • H01L2224/29316—Lead [Pb] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298—Fillers
    • H01L2224/29299—Base material
    • H01L2224/29386—Base material with a principal constituent of the material being a non metallic, non metalloid inorganic material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298—Fillers
    • H01L2224/29299—Base material
    • H01L2224/2939—Base material with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298—Fillers
    • H01L2224/29399—Coating material
    • H01L2224/294—Coating material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29438—Coating material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/29439—Silver [Ag] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298—Fillers
    • H01L2224/29399—Coating material
    • H01L2224/294—Coating material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29438—Coating material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/29444—Gold [Au] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298—Fillers
    • H01L2224/29399—Coating material
    • H01L2224/294—Coating material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29438—Coating material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/29447—Copper [Cu] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298—Fillers
    • H01L2224/29399—Coating material
    • H01L2224/294—Coating material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29438—Coating material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/29455—Nickel [Ni] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298—Fillers
    • H01L2224/29399—Coating material
    • H01L2224/2949—Coating material with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298—Fillers
    • H01L2224/29399—Coating material
    • H01L2224/29493—Coating material with a principal constituent of the material being a solid not provided for in groups H01L2224/294 - H01L2224/29491, e.g. allotropes of carbon, fullerene, graphite, carbon-nanotubes, diamond
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/731—Location prior to the connecting process
    • H01L2224/73101—Location prior to the connecting process on the same surface
    • H01L2224/73103—Bump and layer connectors
    • H01L2224/73104—Bump and layer connectors the bump connector being embedded into the layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73201—Location after the connecting process on the same surface
    • H01L2224/73203—Bump and layer connectors
    • H01L2224/73204—Bump and layer connectors the bump connector being embedded into the layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H01L2224/8119—Arrangement of the bump connectors prior to mounting
    • H01L2224/81191—Arrangement of the bump connectors prior to mounting wherein the bump connectors are disposed only on the semiconductor or solid-state body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/8319—Arrangement of the layer connectors prior to mounting
    • H01L2224/83191—Arrangement of the layer connectors prior to mounting wherein the layer connectors are disposed only on the semiconductor or solid-state body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/8319—Arrangement of the layer connectors prior to mounting
    • H01L2224/83192—Arrangement of the layer connectors prior to mounting wherein the layer connectors are disposed only on another item or body to be connected to the semiconductor or solid-state body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/832—Applying energy for connecting
    • H01L2224/83201—Compression bonding
    • H01L2224/83205—Ultrasonic bonding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/832—Applying energy for connecting
    • H01L2224/83201—Compression bonding
    • H01L2224/83205—Ultrasonic bonding
    • H01L2224/83206—Direction of oscillation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/838—Bonding techniques
    • H01L2224/83801—Soldering or alloying
    • H01L2224/83815—Reflow soldering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/838—Bonding techniques
    • H01L2224/8385—Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
    • H01L2224/83851—Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester being an anisotropic conductive adhesive
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/838—Bonding techniques
    • H01L2224/8385—Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
    • H01L2224/83855—Hardening the adhesive by curing, i.e. thermosetting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/83905—Combinations of bonding methods provided for in at least two different groups from H01L2224/838 - H01L2224/83904
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/10—Bump connectors ; Manufacturing methods related thereto
    • H01L24/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L24/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/10—Bump connectors ; Manufacturing methods related thereto
    • H01L24/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L24/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00013—Fully indexed content
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01029—Copper [Cu]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/0132—Binary Alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/0132—Binary Alloys
    • H01L2924/01322—Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/0133—Ternary Alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/06—Polymers
    • H01L2924/078—Adhesive characteristics other than chemical
    • H01L2924/0781—Adhesive characteristics other than chemical being an ohmic electrical conductor
    • H01L2924/07811—Extrinsic, i.e. with electrical conductive fillers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12041—LED
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/156—Material
    • H01L2924/15786—Material with a principal constituent of the material being a non metallic, non metalloid inorganic material
    • H01L2924/15788—Glasses, e.g. amorphous oxides, nitrides or fluorides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/35—Mechanical effects
    • H01L2924/351—Thermal stress

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Adhesives Or Adhesive Processes (AREA)
  • Adhesive Tapes (AREA)
  • Conductive Materials (AREA)

Abstract

本发明涉及用于超声波粘合的各向异性导电粘合剂(ACA)，其电连接作为第一电子部件的连接部分的电极的第一电极和作为第二电子部件的连接部分的电极的第二电极。该用于超声波粘合的各向异性导电粘合剂包括：绝缘聚合物树脂；导电的粘合剂颗粒，其通过由施加至该各向异性导电粘合剂的超声波产生的热而熔化；和间隔物颗粒，其具有高于粘合剂颗粒的熔点。使粘合剂颗粒熔化并与选自第一电极和第二电极的至少一个电极进行表面接触，并且使所述第一电极和所述第二电极以通过所述间隔物颗粒在所述第一电极和所述第二电极之间所保持的恒定间隙电连接。

Description

用于超声波粘合的各向异性导电粘合剂、和使用其的电子部件连接方法
技术领域
本发明涉及用于电连接作为第一电子部件的连接部分的电极的第一电极和作为第二电子部件的连接部分的电极的第二电极的各向异性导电粘合剂(ACA)、以及使用其将电子部件互连的方法。
背景技术
各向异性导电粘合剂可为这样的粘合剂材料：其基于绝缘聚合物树脂和分散在该聚合物树脂中的导电颗粒同时进行经由导电颗粒的电极电互连，和经由聚合物树脂的热固化的机械连接。
通常，使用细颗粒例如金、铜、镍、碳、金属涂覆的聚合物、本征导电聚合物等作为导电颗粒，并且使用环氧树脂、聚酰亚胺树脂、硅树脂、丙烯酸类树脂、聚酯树脂或者聚砜树脂作为聚合物树脂。根据应用领域，导电颗粒的类型可变化，并且为了降低热膨胀系数，它们可包括非导电颗粒。
在使用各向异性导电粘合剂将电子部件互连的方法中，在如下方面具有优点：它是清洁、简单和环境友好的，因为用无铅方法代替了现有的焊接(soldering)方法；它是更加热稳定的，因为无需将向产品施加瞬时温度(低温方法)；该方法的成本可通过使用便宜基底例如玻璃基底或聚酯柔性基底而降低，而且可经由使用细导电颗粒的电连接来实施超精细电极间距。
具有这些优点的各向异性导电粘合剂广泛地用于例如如下的应用中：智能卡、液晶显示器(LCD)、等离子体显示面板(PDP)、有机发光二极管的显示包装、计算机、便携式电话、通信系统等。
各向异性导电粘合剂一般在显示模块安装技术中用于在将柔性基底连接至玻璃基底时的外部引线接合(outer lead bonding)(OLB)和用于将该柔性基底与印刷电路板(PCB)接合。各向异性导电粘合剂的市场正迅速地增长。
此外，在COG(玻载芯片)(其中驱动电路IC芯片直接连接至玻璃基底)和COF(膜载芯片)(其中倒装芯片直接连接至柔性基底)的接合方法中，因为需要具有超精细间距的连接(归因于驱动电路IC日益提高的致密化和复杂性)，所以各向异性导电粘合剂的重要性也正迅速地增加。
在使用各向异性导电粘合剂的电子部件的安装技术中，利用热压法和聚合物树脂的热固化在电极片(electrode pad)之间经由导电颗粒的导电来实现连接。
当使用各向异性导电粘合剂时，必须解决例如如下的若干问题：聚合物树脂不均匀的热固化，由于在加热和冷却过程中产生的残余应力所引起的扭曲，热变形，板平坦度等。此外，由于电子部件的电极和各向异性导电粘合剂的导电颗粒之间的点接触，电子部件的电连接存在高接触电阻的问题。
详细而言，图1A说明将作为连接对象的两个电子部件100和300互连的常规方法。如图1A中所示，作为一个连接对象的电子部件100包括在其上表面部分中形成的电极110。电子部件100的上表面部分用各向异性导电糊200涂覆或附着(attach)有各向异性导电膜200，该各向异性导电糊200或各向异性导电膜200是包含绝缘热固性聚合物树脂220和导电金属颗粒210的各向异性导电粘合剂；然后在其上排列作为另一连接对象的电子部件300的电极310。之后，通过施加热和压力使聚合物树脂固化，并且这两个电极110和310变为导电的。
然而，在该常规技术中，导电颗粒210与电极110及310仅仅是物理接触，如图1B中所示。因此，由于该物理点接触，在两个电极之间的接触电阻可为高的，并且电流的流动可受限制。
发明内容
本发明的一个实施方案涉及用于电连接的各向异性导电粘合剂，其中可显著地降低在作为连接对象的两个电极之间的接触电阻，而且可流过大量电流，因此实现高可靠性。
本发明的另一实施方案涉及使用超声波的电子部件互连方法，其中各向异性导电粘合剂能够均匀地固化以改进可靠性，作为连接对象的电子部件可受热而不变形，而且在电子部件的电极之间的接触电阻可为非常低的。
根据本发明的一个实施方案，在电连接作为第一电子部件的连接部分的电极的第一电极与作为第二电子部件的连接部分的电极的第二电极的用于超声波粘合的各向异性导电粘合剂(ACA)中，所述各向异性导电粘合剂包括：绝缘聚合物树脂；导电的粘合剂颗粒，其由于由施加至所述各向异性导电粘合剂的超声波产生的热而熔化；和间隔物颗粒，其具有比所述粘合剂颗粒高的熔点；和使所述粘合剂颗粒熔化且与选自所述第一电极和所述第二电极的至少一个电极进行表面接触；并且使所述第一电极和所述第二电极以通过所述间隔物颗粒在所述第一电极和所述第二电极之间所保持的恒定间隙电连接。
在本发明的各向异性导电粘合剂中，通过所施加的超声波可导致所述聚合物树脂的塑性变形，和通过根据该塑性形的所述聚合物树脂的自加热可使所述粘合剂颗粒熔化。
另外，在本发明的各向异性导电粘合剂中，当施加超声波时，所述间隔物颗粒可保持固态，并且当连接所述第一电子部件和所述第二电子部件时，可抵抗所施加的压力而保持所述第一电极和所述第二电极之间的间隙。此外，在所述间隔物颗粒中，可抵抗当连接所述第一电子部件和所述第二电子部件时所施加的压力而保持所述第一电极和所述第二电极之间的间隙，使得熔化的粘合剂颗粒具有均匀的粘合外观(appearance)。
所述粘合剂颗粒和所述间隔物颗粒满足以下式1。
【式1】
Tmc≤0.9Tms
(Tmc是所述粘合剂颗粒的熔点(℃)和Tms是所述间隔物颗粒的熔点(℃)。)
此外，满足式1关系的所述粘合剂颗粒和所述间隔物颗粒还可满足下式2和3。
【式2】
120℃≤Tmc≤300℃
(Tmc是所述粘合剂颗粒的熔点(℃)。)
【式3】
200℃≤Tms≤5000℃
(Tms是所述间隔物颗粒的熔点(℃)。)
另外，在本发明的各向异性导电粘合剂中，所述粘合剂颗粒的平均颗粒直径可大于所述间隔物颗粒的平均颗粒直径，并且所述粘合剂颗粒和所述间隔物颗粒的平均颗粒直径可彼此独立地是3μm-100μm。
为了大规模生产、制造成本和选择性导电，所述间隔物颗粒可为非导电颗粒。
为了接触电阻，当电子部件互连时，所述间隔物颗粒可为导电颗粒。
为了大规模生产、制造成本、选择性传导和接触电阻，间隔物颗粒可为混合颗粒，其包括导电颗粒和非导电颗粒的混合物。
另外，在本发明的各向异性导电粘合剂中，所述绝缘聚合物树脂可为热固性聚合物树脂或热塑性聚合物树脂。当所述绝缘聚合物树脂是热固性聚合物树脂时，则通过所施加的超声波可使该热固性聚合物树脂固化，并且可使所述导电的粘合剂颗粒熔化。此外，当所述绝缘聚合物树脂是热塑性聚合物树脂时，则可使该热塑性聚合物树脂熔化，并且可使所述导电的粘合剂颗粒熔化。
同时，在其中向所述各向异性导电粘合剂施加超声波的单一方法中，在使所述热固性聚合物树脂固化或者使所述热塑性聚合物树脂熔化的同时，可使在根据本发明的各向异性导电粘合剂内的导电的粘合剂颗粒熔接(weld)。
另外，在本发明的各向异性导电粘合剂中，所述各向异性导电粘合剂可含有5-30重量％的所述粘合剂颗粒，和1-50重量％的所述间隔物颗粒。
另外，在本发明的各向异性导电粘合剂中，所述粘合剂颗粒可为作为焊料合金(solder alloy)的Pb基合金、Sn基合金、Sn-Bi基合金、Sn-Zn基合金、Sn-Ag基合金、Sn-Ag-Au基合金、或这些合金的混合物。
优选地，所述粘合剂颗粒可为无铅焊料，其中该无铅焊料满足欧盟的RoHS-6(危害性物质限制(Restriction of Hazardous Substances))指令。
更优选地，所述粘合剂颗粒可为作为焊料合金的Pb基合金、Sn基合金、Sn-Bi基合金、Sn-Zn基合金、Sn-Ag基合金、Sn-Ag-Au基合金、或这些合金的混合物。
另外，在本发明的各向异性导电粘合剂中，所述间隔物颗粒可为选自如下的至少一种非导电颗粒：聚合物颗粒，包括环氧树脂、聚酰亚胺、硅树脂、丙烯酸类树脂、聚酯、聚砜和聚苯乙烯；和陶瓷颗粒，包括氧化铝、氧化硅、氮化硅、氧化钛和金刚石；或者所述间隔物颗粒可为选自如下的至少一种导电颗粒：涂覆有金属的聚合物、银、金、铜、镍、碳、和本征导电聚合物。
所述各向异性导电粘合剂可为各向异性导电糊(ACP)或各向异性导电膜，优选各向异性导电膜。
所述绝缘聚合物树脂可为热固性聚合物树脂或热塑性聚合物树脂，并且通过施加超声波，可使所述热固性聚合物树脂固化，或者可使所述热塑性聚合物树脂和所述粘合剂颗粒熔化。此外，通过所施加的压力和超声波，可使该熔化的粘合剂颗粒与选自所述第一电极和所述第二电极中的至少一个电极进行表面接触。因此，本发明的各向异性导电粘合剂具有高的可靠性。
通过所述粘合剂颗粒的熔化，所述粘合剂颗粒可与所述第一电极或所述第二电极的电极材料合金化，并且详细而言，所述粘合剂颗粒可在选自所述第一电极或所述第二电极的一个或多个电极之间的界面处合金化。
另外，本发明的各向异性导电粘合剂可不包含用于使所述导电颗粒熔化的还原剂。
根据本发明的另一实施方案，使用用于超声波粘合的各向异性导电粘合剂将电子部件互连的方法包括：(a)在第一电子部件的连接部分的电极的上部部分之上形成上述实施方案的各向异性导电粘合剂，其中，在所述第一电子部件上形成有所述连接部分的电极以用于同种(homogenous)或异种(heterogeneous)电子部件的电互连；和(b)使所述第一电子部件的连接部分的电极和所述第二电子部件的连接部分的电极互连，包括：通过将所述第二电子部件的连接部分的电极排列和堆叠在所述第一电子部件的连接部分的电极的上侧而形成包含所述第一电子部件、所述各向异性导电粘合剂和所述第二电子部件的叠层体(laminate)，其中所述各向异性导电粘合剂在所述电极之间；通过向所述叠层体施加超声波振动和压力而引起包含在所述各向异性导电粘合剂中的绝缘的热固性或热塑性聚合物树脂的塑性变形；通过根据所述塑性变形的所述聚合物树脂的自加热使包含在所述各向异性导电粘合剂中的所述聚合物树脂固化或熔化；和使包含在所述各向异性导电粘合剂中的所述粘合剂颗粒熔化。
另外，在根据本发明的电子部件互连方法中，在步骤(b)中，在用于超声波粘合的各向异性导电粘合剂内，通过所施加的超声波，可使所述热固性聚合物树脂固化或者可使所述热塑性聚合物树脂熔化，并且可使所述粘合剂颗粒熔化。
另外，在根据本发明的电子部件互连方法中，由所述热固性聚合物树脂的自加热引起的所述各向异性导电粘合剂的温度可通过压力，超声波的频率、振幅、功率和驱动时间，或它们的组合来控制。
在这种情况下，由于步骤(b)中所施加的超声波，所述各向异性导电粘合剂的温度可在120-300℃的范围之内。
附图说明
图1A和1B是说明使用根据常规技术的各向异性导电粘合剂将两个电子部件互连的方法的流程图；
图2是说明根据本发明的用于超声波粘合的各向异性导电粘合剂的图；和
图3是说明使用根据本发明的用于超声波粘合的各向异性导电粘合剂将电子部件互连的方法的流程图。
具体实施方式
在下文中，将参照附图详细地描述根据本发明的各向异性导电粘合剂和使电子部件互连的方法的示例性实施方案。然而，本发明可以不同形式体现，且不应解释为限于此处所阐述的实施方案。相反，提供这些实施方案以使得本公开内容透彻和完整，并将本发明的范围充分地传达给本领域技术人员。
在整个本公开内容中，在本发明的各附图和实施方式中，相同的附图标记始终是指相同的部件。
在这种情况下，在本文中所描述的技术和科学术语中，如果没有描述不同的定义，则其意味着本发明所属领域的技术人员通常能够理解本发明。此外，在说明书和附图中，将省略其解释将导致本发明要点变得不必要地模糊的已知特征和结构。
根据本发明，各向异性导电粘合剂包括绝缘聚合物树脂430、粘合剂颗粒410和熔点高于所述粘合剂颗粒的熔点的间隔物颗粒420。此外，在该用于超声波粘合的各向异性导电粘合剂中，通过向所述各向异性导电粘合剂施加超声波，可使聚合物树脂430固化或熔化。
所述绝缘聚合物树脂可为热固性聚合物树脂或热塑性聚合物树脂，并且优选是热固性聚合物树脂。在下文中，将基于热固性聚合物树脂，参考图2和图3来描述本发明。在以下讨论中，在其中所述聚合物树脂是热塑性聚合物树脂而不是热固性聚合物树脂的情况下，显而易见的是，除了通过施加超声波实现热塑性聚合物树脂的熔化而不是其固化之外，可保持本发明的主要思想。
超声波的施加意味着将超声波振动施加至各向异性导电粘合剂400，并且该超声波振动包括伴有预定压力的振动。
施加至各向异性导电粘合剂400的超声波引起各向异性导电粘合剂400中所含的聚合物树脂430的塑性变形，并且通过所述塑性变形使聚合物树脂430自加热。
通过聚合物树脂430基于超声波的自加热，使各向异性导电粘合剂400的温度升高到高于聚合物树脂430的固化温度。
根据本发明的各向异性导电粘合剂400可为用于超声波粘合的各向异性导电粘合剂400，其中，通过上述超声波振动进行粘合剂400的固化。此外，各向异性导电粘合剂400包括间隔物颗粒，所述间隔物颗粒具有高于粘合剂颗粒410的熔点。
如图2中所示，粘合剂颗粒410是在当施加超声波时所产生的热中熔化的导电颗粒，和间隔物颗粒420是即使在施加超声波时也仍然保持固态的导电或非导电颗粒。
当电子部件通过使用根据本发明的各向异性导电粘合剂400互连时，在作为连接对象的电子部件的两个连接电极110和310之间的粘合剂颗粒410通过由各向异性导电粘合剂400产生的热而熔化，并与连接电极110和310以表面接触的方式熔接。
因此，连接电极110和310与熔化的粘合剂颗粒410’具有非常低的接触电阻。另外，在连接电极110和310与熔化的粘合剂颗粒410’中，大电流能够稳定地流过，并牢固地实现了物理连接。另外，粘合剂颗粒410在与所述第一电极或第二电极的电极材料的界面处合金化，从而具有更低的接触电阻和更高的界面粘合。
由于间隔物颗粒420具有即使在向其施加超声波时也保持固态的特性，因此在施加超声波时，间隔物颗粒420耐受外部压力。
可通过间隔物颗粒420防止作为连接对象的电子部件的两个连接电极110和310以物理方式面对彼此。因此，电流能够在选择的位置流过。此外，可使粘合剂颗粒410’熔化并且与连接部分电极110和310进行表面接触，同时保持恒定形状。
如上所述，在根据本发明的用于超声波粘合的各向异性导电粘合剂400中，通过施加超声波，可使所述热固性聚合物树脂固化(430’)，并且可使所述粘合剂颗粒熔化(410’)。
所述聚合物树脂可为在100-300℃的温度下固化的树脂，优选环氧树脂、聚酰亚胺树脂、丙烯酸类树脂、聚酯树脂、聚砜树脂、聚酰亚胺树脂、聚酯树脂、或它们的混合物。
当各向异性导电粘合剂400自加热时，希望的是，使粘合剂颗粒410稳定地熔化并且基于间隔物颗粒420的熔点(Tms，℃)，粘合剂颗粒410具有低于0.9×Tms的熔点，使得间隔物颗粒420保持固态。在这种情况下，粘合剂颗粒410的熔点(Tmc，℃)是120-300℃，和间隔物颗粒420的熔点(Tms，℃)是200-5000℃，使得通过各向异性导电粘合剂400的自加热，可使聚合物树脂430固化和可使粘合剂颗粒410熔化。
粘合剂颗粒410和间隔物颗粒420的平均颗粒直径可彼此独立地是3μm-100μm。在这种情况下，就连接电极110和310与粘合剂颗粒410的有效熔接而言，粘合剂颗粒410的平均颗粒直径可大于间隔物颗粒420的平均颗粒直径。
间隔物颗粒420可为导电或非导电颗粒，或者导电颗粒和非导电颗粒的混合物。
当间隔物颗粒420是导电颗粒时，连接电极110和310可为更稳定导电的，和当间隔物颗粒420是非导电颗粒时，能够改善连接电极110和310的导电选择性。
优选地，各向异性导电粘合剂400可含有5-30重量％的粘合剂颗粒410和1-20重量％的间隔物颗粒420。
另外，优选的是，粘合剂颗粒410是无铅焊料颗粒，并且详细而言，是Pb基合金、Sn基合金、Sn-Bi基合金、Sn-Zn基合金、Sn-Ag基合金、Sn-Ag-Au基合金、或这些合金的混合物。
当间隔物颗粒420是非导电颗粒时，优选的是选择环氧树脂、聚酰亚胺、硅树脂、丙烯酸类树脂、聚酯、聚砜、氧化铝、氧化硅、氮化硅、氧化钛、金刚石、或它们的混合物，和当间隔物颗粒420是导电颗粒时，优选的是选择涂覆有金属的聚合物、银、金、铜、镍、碳、本征导电聚合物、或它们的混合物。
在根据本发明的各向异性导电粘合剂400中，可通过超声波的施加非常快速且均匀地进行聚合物树脂的固化和导电的粘合剂颗粒的熔化。另外，因为可通过压力和超声波的施加而容易地使该熔化的粘合剂颗粒熔接，所以它们可没有氧化，因此不包含还原剂。
如上所述的根据本发明的各向异性导电粘合剂400可为膜类型或糊类型，和优选是各向异性导电膜。
图3是说明通过使用根据本发明的各向异性导电粘合剂400将电子部件互连的方法的流程图。在基于图3对根据本发明的电子部件互连方法的说明中，因为根据本发明的各向异性导电粘合剂400的主要思想与上述说明的相同，所以省去其说明。
在第一电极110的表面上形成各向异性导电粘合剂400，所述第一电极是作为连接对象的第一电子部件100的连接电极。
当各向异性导电粘合剂400是膜类型时，可将该各向异性导电膜附着于第一电极100的表面。另外，当各向异性导电粘合剂400是糊类型时，可使用丝网印刷、旋涂或者刮涂来涂覆第一电极100的表面。
随后，排列和层叠作为另一连接对象的第二电子部件300，使得第一电极100可与第二电极310相对，该第二电极310是第二电子部件300的连接电极；然后将超声波施加于包括第一电子部件100、各向异性导电粘合剂400和第二电子部件300的叠层体。
在这种情况下，可将该叠层体设置在用于物理支持的载体1000的上部部分之上。另外，为了最小化来自各向异性导电粘合剂400的热损失，通过具有低热导率的绝热振动传递介质2000向该叠层体施加伴有压力的超声波振动。
通过所施加的超声波使各向异性导电粘合剂400中所含的聚合物树脂430塑性变形，并且产生热量。根据该自加热，可使聚合物树脂430固化，可使粘合剂颗粒410熔化，并且可使第一电极110和第二电极310彼此电连接。
根据本发明，可使用伴有预定压力的超声波而不是通过外部热源的热传递使聚合物树脂430自加热。因此，由于无论作为连接对象的电子部件的面积、和各向异性导电粘合剂的厚度如何，均可维持均匀的温度，所以可防止由不均匀热传导所引起的聚合物树脂的分解。另外，因为该加热仅出现在聚合物树脂中，所以可使由热膨胀上的差异引起的热应力最小化。
另外，所述聚合物树脂的固化可显著地快于外部源的热传递，并且各向异性导电粘合剂400的温度可得以快速和精确地控制。
在这种情况下，聚合物树脂430的自加热程度可通过压力，超声波的频率、振幅、功率和驱动时间，或其组合来控制，并且因此，各向异性导电粘合剂400的温度可得以快速和精确地控制。
为了使聚合物树脂430固化和使粘合剂颗粒410熔化，由于超声波的施加所引起的各向异性导电粘合剂的温度可为120-300℃。
将通常包含8μm尺寸的导电Ni颗粒的各向异性导电膜附着在两个电极之间，并且向其施加热和压力(150度，2MPa)。作为其电连接特性的测试的结果，可获得大约9.2毫欧姆的接触电阻。同时，根据本发明，分别使用20μm的共晶Sn/Bi焊料和8μm的Ni作为粘合剂颗粒和间隔物颗粒，并且施加超声波振动。作为在225℃温度下在两个电极之间的连接特性的测试结果，证实可获得约6.2毫欧姆的非常低的接触电阻。另外，证实了连接部分具有超过常用的各向异性导电膜两倍的高的可靠性，即便在121℃和2atm和100％的相对湿度下的严酷测试时也是如此。
根据本发明，在各向异性导电粘合剂和使用该各向异性导电粘合剂将电子部件互连的方法中，在各向异性导电粘合剂内的金属颗粒可通过由所施加的超声波产生的内部热量而部分地熔化，并且作为连接对象的两个电极可通过表面接触而不是点接触来连接。因此，在两个电极之间的接触电阻可显著地降低。另外，无论各向异性导电粘合剂的厚度和面积如何，均可非常精确且快速地控制内部热量范围(即各向异性导电粘合剂的温度)，从而保持均匀的温度。此外，在各向异性导电粘合剂之内的金属材料可没有氧化，并且可使用各向异性导电粘合剂的内部热量。因此，可防止作为连接对象的电子部件的热变形，从而获得高可靠性。
虽然已针对具体实施方案对本发明进行了描述，但是对于本领域技术人员显而易见的是，在不脱离如在所附权利要求书中所定义的本发明的精神和范围的情况下，可进行各种变化和改进。
因此，所附权利要求意图涵盖落入该权利要求的界限或该界限的等同物内的所有变化和改进。

Claims (10)

1.用于超声波粘合的各向异性导电粘合剂(ACA)，其电连接作为第一电子部件的连接部分的电极的第一电极和作为第二电子部件的连接部分的电极的第二电极，所述各向异性导电粘合剂包括：
绝缘聚合物树脂；
导电的粘合剂颗粒，其通过由施加至所述各向异性导电粘合剂的超声波产生的热而熔化；和
间隔物颗粒，其熔点高于所述粘合剂颗粒的熔点，
其中使所述粘合剂颗粒熔化并且与选自所述第一电极和所述第二电极的至少一个电极进行表面接触，和使所述第一电极和所述第二电极以通过所述间隔物颗粒在所述第一电极和所述第二电极之间所保持的恒定间隙电连接。
2.根据权利要求1的各向异性导电粘合剂，其中通过所施加的超声波引起所述聚合物树脂的塑性变形，并且通过根据所述塑性变形的聚合物树脂的自加热而使所述粘合剂颗粒熔化。
3.根据权利要求2的各向异性导电粘合剂，其中所述间隔物颗粒是这样的导电或非导电粒子：其在施加所述超声波时保持固态；抵抗当连接所述第一电子部件和所述第二电子部件时所施加的压力而保持所述第一电极和所述第二电极之间的间隙，使得熔化的粘合剂颗粒具有均匀的表观粘合；并且所述粘合剂颗粒通过所述粘合剂颗粒的熔化而与所述第一电极或所述第二电极的电极材料合金化。
4.根据权利要求2的各向异性导电粘合剂，其中所述粘合剂颗粒的平均颗粒直径大于所述间隔物颗粒的平均颗粒直径，并且所述粘合剂颗粒和所述间隔物颗粒的平均颗粒直径彼此独立地是3μm-100μm。
5.根据权利要求2的各向异性导电粘合剂，其中所述绝缘聚合物树脂是热固性聚合物树脂或热塑性聚合物树脂，和通过所施加的超声波，使所述热固性聚合物树脂固化或者使所述热塑性聚合物树脂熔化，并且使所述粘合剂颗粒熔化。
6.根据权利要求2的各向异性导电粘合剂，其中所述各向异性导电粘合剂包含5-30重量％的所述粘合剂颗粒和1-50重量％的所述间隔物颗粒。
7.根据权利要求6的各向异性导电粘合剂，其中所述粘合剂颗粒是作为焊料合金的Pb基合金、Sn基合金、Sn-Bi基合金、Sn-Zn基合金、Sn-Ag基合金和Sn-Ag-Au基合金、或这些合金的混合物。
8.根据权利要求7的各向异性导电粘合剂，其中所述间隔物颗粒是选自如下的至少一种非导电颗粒：聚合物颗粒，包括环氧树脂、聚酰亚胺、硅树脂、丙烯酸类树脂、聚酯、聚砜和聚苯乙烯；和陶瓷颗粒，包括氧化铝、氧化硅、氮化硅，氧化钛和金刚石；或者所述间隔物颗粒是选自如下的至少一种导电颗粒：涂覆有金属的聚合物、银、金、铜、镍、碳和本征导电聚合物。
9.使用用于超声波粘合的各向异性导电粘合剂来互连电子部件的方法，包括：
(a)在第一电子部件的连接部分的电极的上部部分之上形成权利要求1-8中任一项的各向异性导电粘合剂，其中，在所述第一电子部件上形成有所述连接部分的电极以用于同种或异种电子部件的电互连；和
(b)使所述第一电子部件的连接部分的电极和所述第二电子部件的连接部分的电极互连，包括：
通过将所述第二电子部件的连接部分的电极排列和堆叠在所述第一电子部件的连接部分的电极的上侧而形成包括所述第一电子部件、所述各向异性导电粘合剂和所述第二电子部件的叠层体，其中所述各向异性导电粘合剂在所述电极之间；
通过向所述叠层体施加超声波振动和压力而引起包含在所述各向异性导电粘合剂中的绝缘的热固性或热塑性聚合物树脂的塑性变形；
通过根据该塑性变形的所述聚合物树脂的自加热使包含在所述各向异性导电粘合剂中的所述聚合物树脂固化或熔化；和
使包含在所述各向异性导电粘合剂中的粘合剂颗粒熔化。
10.根据权利要求9的互连方法，其中由所述聚合物树脂的自加热引起的所述各向异性导电粘合剂的温度通过压力，所述超声波的频率、振幅、功率和驱动时间，或它们的组合来控制。
CN2010800405436A 2009-07-13 2010-01-27 用于超声波粘合的各向异性导电粘合剂、和使用其的电子部件连接方法 Expired - Fee Related CN102482540B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
KR10-2009-0063434 2009-07-13
KR1020090063434A KR101025620B1 (ko) 2009-07-13 2009-07-13 초음파 접합용 이방성 전도성 접착제 및 이를 이용한 전자부품 간 접속방법
PCT/KR2010/000477 WO2011007947A1 (ko) 2009-07-13 2010-01-27 초음파 접합용 이방성 전도성 접착제 및 이를 이용한 전자부품 간 접속방법

Publications (2)

Publication Number Publication Date
CN102482540A true CN102482540A (zh) 2012-05-30
CN102482540B CN102482540B (zh) 2013-06-19

Family

ID=43449544

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2010800405436A Expired - Fee Related CN102482540B (zh) 2009-07-13 2010-01-27 用于超声波粘合的各向异性导电粘合剂、和使用其的电子部件连接方法

Country Status (6)

Country Link
US (1) US20120118480A1 (zh)
EP (1) EP2455435A1 (zh)
JP (1) JP5506925B2 (zh)
KR (1) KR101025620B1 (zh)
CN (1) CN102482540B (zh)
WO (1) WO2011007947A1 (zh)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104461117A (zh) * 2013-09-12 2015-03-25 迪睿合电子材料有限公司 连接结构体及各向异性导电粘接剂
CN105741917A (zh) * 2016-03-11 2016-07-06 联想(北京)有限公司 一种导电胶膜及电子设备
CN107849428A (zh) * 2015-11-20 2018-03-27 积水化学工业株式会社 粒子、连接材料及连接结构体
CN107851475A (zh) * 2015-07-01 2018-03-27 H.E.F.公司 由包被粉末制备的传导性复合材料
CN107849426A (zh) * 2015-11-20 2018-03-27 积水化学工业株式会社 连接材料及连接结构体
CN109803812A (zh) * 2016-10-07 2019-05-24 多种材料焊接股份公司 活化粘合剂的方法
TWI670180B (zh) * 2017-04-26 2019-09-01 南韓商路㒷穩股份有限公司 含間隔物的各向異性導電黏合劑的製造方法
CN112122822A (zh) * 2020-09-02 2020-12-25 深圳远芯光路科技有限公司 一种各向异性导电焊胶及其制备方法和一体化制备装置

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6435627B2 (ja) * 2014-03-20 2018-12-12 デクセリアルズ株式会社 異方性導電フィルム及びその製造方法
KR102431084B1 (ko) 2014-12-04 2022-08-11 세키스이가가쿠 고교가부시키가이샤 도전 페이스트, 접속 구조체 및 접속 구조체의 제조 방법
WO2017086455A1 (ja) * 2015-11-20 2017-05-26 積水化学工業株式会社 粒子、接続材料及び接続構造体
KR101651649B1 (ko) * 2016-01-22 2016-08-29 주식회사 일렉켐스 전기 또는 전자 부품 접속용 도전성 접착 조성물
KR102535557B1 (ko) * 2016-03-07 2023-05-24 삼성디스플레이 주식회사 표시 장치 및 전자 디바이스
KR101678178B1 (ko) * 2016-04-08 2016-11-21 주식회사 일렉켐스 전기 또는 전자 부품 접속용 이방도전성 접착 조성물
KR102767329B1 (ko) * 2016-04-20 2025-02-18 삼성디스플레이 주식회사 표시 장치 및 표시 장치의 제조 방법
US10756119B2 (en) 2016-04-20 2020-08-25 Samsung Display Co., Ltd. Display device and method for manufacturing same
KR20180024099A (ko) * 2016-08-26 2018-03-08 삼성디스플레이 주식회사 접합 조립체 및 이를 포함하는 표시 장치
JP6726070B2 (ja) * 2016-09-28 2020-07-22 エルジー ディスプレイ カンパニー リミテッド 電子部品の実装方法、電子部品の接合構造、基板装置、ディスプレイ装置、ディスプレイシステム
US10629557B2 (en) * 2016-12-30 2020-04-21 Intel Corporation Improving mechanical and thermal reliability in varying form factors
US10640374B2 (en) * 2017-05-18 2020-05-05 Dunan Microstaq, Inc. Method and structure of attachment layer for reducing stress transmission to attached MEMS die
EP3460861B1 (en) * 2017-09-21 2023-03-01 InnoLux Corporation Display device
JP6432919B2 (ja) * 2017-11-14 2018-12-05 セイコーインスツル株式会社 光学デバイスの製造方法
KR102535108B1 (ko) * 2018-09-03 2023-05-24 한국전자통신연구원 레이저 접합 방법
US11107790B2 (en) * 2018-09-03 2021-08-31 Electronics And Telecommunications Research Institute Laser bonding method
JP7547866B2 (ja) 2020-08-26 2024-09-10 セイコーエプソン株式会社 電気光学装置、及び電子機器

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0344719A2 (en) * 1988-05-31 1989-12-06 Canon Kabushiki Kaisha Electric circuit device
EP0692137A1 (en) * 1994-01-27 1996-01-17 Loctite (Ireland) Limited Compositions and methods for providing anisotropic conductive pathways and bonds between two sets of conductors
CN1532903A (zh) * 2002-03-25 2004-09-29 索尼化学株式会社 连接构件的制造方法

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3769007A (en) * 1972-04-13 1973-10-30 Aluminum Co Of America Lead-bismuth alloy for soldering aluminum
US5225966A (en) * 1991-07-24 1993-07-06 At&T Bell Laboratories Conductive adhesive film techniques
JPH05174618A (ja) * 1991-12-25 1993-07-13 Casio Comput Co Ltd 導電用結合剤および導電接続構造
KR100241589B1 (ko) * 1995-12-22 2000-02-01 구광시 이방도전성 필름
KR100539060B1 (ko) * 1997-10-28 2007-04-25 소니 케미카루 가부시키가이샤 이방도전성접착제및접착용막
CN1230483C (zh) * 1998-08-13 2005-12-07 日立化成工业株式会社 电路构件连接用的粘结剂,电路板及其制造方法
KR100305750B1 (ko) * 1999-03-10 2001-09-24 윤덕용 플라스틱 기판의 플립 칩 접속용 이방성 전도성 접착제의 제조방법
JP2001156430A (ja) * 1999-11-26 2001-06-08 Hitachi Chem Co Ltd 回路板の製造方法及び回路接続材料
JP2006199833A (ja) * 2005-01-20 2006-08-03 Sekisui Chem Co Ltd 異方性導電接着剤
KR100746330B1 (ko) * 2005-11-24 2007-08-03 한국과학기술원 초음파를 이용한 전자부품간의 접속방법
JP4893046B2 (ja) * 2006-03-22 2012-03-07 東レ株式会社 電子機器用接着剤組成物、それを用いた電子機器用接着剤シート
JP2007335392A (ja) * 2006-05-19 2007-12-27 Hitachi Chem Co Ltd 回路部材の接続方法
JP2009029841A (ja) * 2007-07-24 2009-02-12 Sumitomo Electric Ind Ltd フィルム状接着剤、極細同軸ケーブルおよび極細同軸ケーブルの製造方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0344719A2 (en) * 1988-05-31 1989-12-06 Canon Kabushiki Kaisha Electric circuit device
EP0692137A1 (en) * 1994-01-27 1996-01-17 Loctite (Ireland) Limited Compositions and methods for providing anisotropic conductive pathways and bonds between two sets of conductors
CN1532903A (zh) * 2002-03-25 2004-09-29 索尼化学株式会社 连接构件的制造方法

Cited By (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104461117B (zh) * 2013-09-12 2020-09-08 迪睿合电子材料有限公司 连接结构体及各向异性导电粘接剂
CN104461117A (zh) * 2013-09-12 2015-03-25 迪睿合电子材料有限公司 连接结构体及各向异性导电粘接剂
CN107851475A (zh) * 2015-07-01 2018-03-27 H.E.F.公司 由包被粉末制备的传导性复合材料
CN107849428B (zh) * 2015-11-20 2021-09-28 积水化学工业株式会社 粒子、连接材料及连接结构体
CN107849428A (zh) * 2015-11-20 2018-03-27 积水化学工业株式会社 粒子、连接材料及连接结构体
CN107849427A (zh) * 2015-11-20 2018-03-27 积水化学工业株式会社 粒子、连接材料及连接结构体
CN107849426A (zh) * 2015-11-20 2018-03-27 积水化学工业株式会社 连接材料及连接结构体
CN105741917B (zh) * 2016-03-11 2019-03-08 联想(北京)有限公司 一种导电胶膜及电子设备
CN105741917A (zh) * 2016-03-11 2016-07-06 联想(北京)有限公司 一种导电胶膜及电子设备
CN109803812A (zh) * 2016-10-07 2019-05-24 多种材料焊接股份公司 活化粘合剂的方法
TWI670180B (zh) * 2017-04-26 2019-09-01 南韓商路㒷穩股份有限公司 含間隔物的各向異性導電黏合劑的製造方法
CN110494526A (zh) * 2017-04-26 2019-11-22 株式会社诺品 包含间隙剂的各向异性导电粘结剂的制备方法及利用间隙剂的部件安装方法
CN110494526B (zh) * 2017-04-26 2021-11-19 株式会社诺品 包含间隙剂的各向异性导电粘结剂的制备方法及利用间隙剂的部件安装方法
CN112122822A (zh) * 2020-09-02 2020-12-25 深圳远芯光路科技有限公司 一种各向异性导电焊胶及其制备方法和一体化制备装置

Also Published As

Publication number Publication date
EP2455435A1 (en) 2012-05-23
KR20110006012A (ko) 2011-01-20
WO2011007947A1 (ko) 2011-01-20
KR101025620B1 (ko) 2011-03-30
US20120118480A1 (en) 2012-05-17
JP2012532979A (ja) 2012-12-20
CN102482540B (zh) 2013-06-19
JP5506925B2 (ja) 2014-05-28

Similar Documents

Publication Publication Date Title
CN102482540A (zh) 用于超声波粘合的各向异性导电粘合剂、和使用其的电子部件连接方法
CN101322233B (zh) 使用超声振动在电气器件之间结合的方法
US6337522B1 (en) Structure employing electrically conductive adhesives
TW202006750A (zh) 各向異性導電膜及其製造方法以及連接結構體的製造方法
CN103298271A (zh) 将柔性pcb结合至相机模块的装置
CN104125712A (zh) 布线板间连接结构、及布线板间连接方法
CN107452706B (zh) 电路部件的连接构造以及连接方法
KR101025623B1 (ko) 코어쉘 구조의 초음파 접합용 이방성 전도성 접착제 및 이를 이용한 전자부품간 접속방법
US20170347463A1 (en) Conductive particle, and connection material, connection structure, and connecting method of circuit member
JP6430148B2 (ja) 接着剤及び接続構造体
KR101157599B1 (ko) 이방성 도전 필름용 도전 입자 및 이를 포함하는 이방성 도전 필름
KR20120022580A (ko) 실장체의 제조 방법, 접속 방법 및 이방성 도전막
JP5113390B2 (ja) 配線間接続方法
KR101211753B1 (ko) 고주파 전자기장을 이용한 전자부품 접속방법 및 장치
EP3257109B1 (en) Electrical connection tape
JP2009218498A (ja) 半導体チップの実装方法及び液晶パネル
JPH11219982A (ja) 導電粒子及びそれを用いた異方性導電接着剤
KR20110131972A (ko) 전자 부품 조립체 및 그의 형성 방법
CN217405124U (zh) 新型异方性导电膜
US20070235844A1 (en) Electronic device mounting structure and method of manufacturing the same
CN207867911U (zh) 共晶式异方性导电膜
CN101295682A (zh) 薄膜覆晶封装结构
JP3252848B2 (ja) 半導体装置
JP2001185581A (ja) 半導体装置の製造方法

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20130619

Termination date: 20220127

CF01 Termination of patent right due to non-payment of annual fee