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CN102466986A - Anticorrosion alkaline developing composition - Google Patents

Anticorrosion alkaline developing composition Download PDF

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Publication number
CN102466986A
CN102466986A CN2010105371052A CN201010537105A CN102466986A CN 102466986 A CN102466986 A CN 102466986A CN 2010105371052 A CN2010105371052 A CN 2010105371052A CN 201010537105 A CN201010537105 A CN 201010537105A CN 102466986 A CN102466986 A CN 102466986A
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Prior art keywords
alcohol
ether
fluid composition
anticorrosion
alkaline development
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Inventor
黄巍
顾奇
赵佳
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SUZHOU RUIHONG ELECTRONIC CHEMICAL PRODUCT CO Ltd
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SUZHOU RUIHONG ELECTRONIC CHEMICAL PRODUCT CO Ltd
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Abstract

The invention provides an anticorrosion alkaline developing composition, which contains the following components of: by weight, 0.1-10% of an organic base aqueous solution, 2-20% of small molecular polyhydric alcohols or alcohol ether, a developing accelerator being less than 1% and 0.005-1% of an antifoaming agent. The developing composition provided by the invention can be applied in the formation of an image after UV exposure of a photosensitive phenolic resin resist, is suitable for the manufacturing of small-middle liquid crystal display device and semiconductor device metal electrodes, and can be used to improve adverse figure problems after development of metal which is sensitive to alkali. Simultaneously, excellent developing performance of the developing solvent can be guaranteed, and the developing composition has advantages of stable pH value, low foaming during the developing process by a spray method, long service life and few image residues.

Description

A kind of anticorrosion alkaline development fluid composition
Technical field
The present invention relates to a kind of alkaline development fluid composition, relate in particular to the low foaming alkaline development fluid composition of a kind of anticorrosion.
Background technology
Generally in integrated circuit (IC), flat-panel monitor fine pattern manufacture crafts such as (FPD), adopt lithography process to accomplish scale production usually, this method is coated with the alkali solubility photoresist relatively more responsive to dynamic rays before comprising etching; Protect the substrate below the resist not to be etched corrosion selectively on substrate, to form film, the oven dry resist forms dry film with evaporating solvent; Dynamic rays commonly used has ultraviolet (UV/Deep-UV), X-ray and electron beam; After the light source exposure through above-mentioned row, come video picture with alkaline-based developer, the substrate after the completion is again with the corrosive liquid etching; And remove remaining light erosion resistant agent layer, thereby obtain preferable image.
In liquid crystal display device and semiconductor devices production, the base material that is used to form metal electrode is mainly the ito glass that vapor deposition has nickel, nickel-chromium, chromium, chromium-aluminium, aluminium, molybdenum-aluminium, molybdenum-aluminium-molybdenum.The metal electrode deposition material of initial LCDs is main with chromium; But since environmental issue such as waste water be difficult to handle, cost recovery is big, be prone to pollute etc., the size of LCDs maximizes and image analytic degree etc. requires increasingly highly in addition, and the aluminium electric conductivity is good; Resistivity is low; High to substrate attachment power, cheap, so the base material of aluminium and molybdenum-constructed of aluminium is used gradually.Aluminium is amphoteric metal, is soluble in highly basic, also can be dissolved in diluted acid, when using alkaline-based developer, the corrosion to aluminium takes place especially easily, thereby has influence on the yield of figure.Under different evaporation process conditions, because the aluminium base different content neodymium metal that mixed can make aluminium passivation to some extent, the aluminium lamination of porous loose structure that is tending towards fine aluminium is easily by alkali corrosion, and the corrosion of the aluminium lamination of dense form aluminium and highly doped amount is slower.Therefore alkali-sensitive aluminium, with the lithography process construction drawing as the time, the developer solution of routine is easy to the corroding metal layer.
Therefore need a kind of alkaline-based developer that alkali erosion metalloid is hanged down corrosion to improve the bad problem of the figure that brings behind the conventional developing liquid developing, the known developer solution that corrosion makes moderate progress to aluminium is to add the metal inhibitor allotment through the alkalitropism WS to form.The metal inhibitor of common aluminium under alkali condition has silicate, permanganate; The carbohydrate of chromate, polyhydroxy structure and glycitols, fragrant acids, amino acids etc.; But the corrosion inhibiter that is applicable to organic quaternary ammonium bases is less; And the interpolation of corrosion inhibiter brings variety of issue easily, bad like figure, membrane left rate is low, development capability dies down or grow, development after leave black surround etc.
In the known disclosed world and domestic patent, many improvement that are directed against the developer solution of aluminium corrosion are arranged:
One Chinese patent application number 02827571.3 has proposed to comprise the alkaline auxiliary lotion, the photoresist developer solution of calcium containing compound and sequestrant, and the characteristics of this developer solution are little to the aluminium corrosion, have provided the kind of builder, sequestrant especially at embodiment.But do not relate to content of the present invention.
Japanese patent application No. 8-160634 proposes, and in organic base, adds 0.2~10% polyol ethers and can improve the aluminium corrosion.
The content of polyvalent alcohol has been added to 20~50% among the japanese publication 64-19344.
Chinese patent publication number 100580561A and 1570772A have added two or more 1~10% polyvalent alcohol; But above-mentioned shortcoming is to be in the developer solution of main flow with 2.38% tetramethylammonium hydroxide, and corrosion has alleviated though the adding of polyvalent alcohol is to aluminium, and the development capability of developer solution weakens greatly; So that required lowest exposure energy increases greatly; Figure more is prone to produce bad, secondly, because many alcohol matters are prone to and alkali generation saponification effect; Be difficult for bubbling not as good as pure ethers at the spray process developing process, and do not relate to the content of aspects such as foam-breaking agent, development accelerator in this patent.
Summary of the invention
The objective of the invention is to solve above-mentioned technical matters, a kind of anticorrosion alkaline development fluid composition is provided.
A kind of anticorrosion alkaline development fluid composition, its said composition contains component and weight percentage does,
The organic base WS 0.1~10%;
Micromolecular polyhydroxy-alcohol or alcohol ether 2~20%;
Development accelerator (organic amine)<1%;
Foam-breaking agent (organic silicon modified by polyether) 0.005~1%.
Further, above-described a kind of anticorrosion alkaline development fluid composition, the wherein said organic base WS is 2~8%.
Further, above-described a kind of anticorrosion alkaline development fluid composition, wherein said micromolecular polyhydroxy-alcohol or alcohol ether mass percent are 4~18%.
Further, above-described a kind of anticorrosion alkaline development fluid composition, the polyol that is selected from 2 and 2 above hydroxyls of wherein said micromolecular polyhydroxy-alcohol or alcohol ether and one or more compositions in the oligomer thereof.
Further, above-described a kind of anticorrosion alkaline development fluid composition, wherein said micromolecular polyhydroxy-alcohol or alcohol ether be selected from monoethylene glycol, EGME, propylene glycol, propylene glycol monomethyl ether, butylene glycol, butylene glycol methyl ether, butylene glycol ether, glycerine, glycerine methyl ether, 1; 2,3,4-penta tetrol, 1; 2; 3,4-penta tetrol methyl ether, xylitol, wood sugar alcohol ether, diethylene glycol monobutyl ether, dipropylene glycol monomethyl ether, one or more compositions of two polypropylene glycols.
Further, above-described a kind of anticorrosion alkaline development fluid composition, the alkali source of the wherein said organic base WS is selected from the straight chain primary amine, secondary amine, tertiary amine is like propylamine, diethylamine, triethylamine; Aromatic amine is like benzyl amine; The heterocyclic bases that has one or more nitrogen, oxygen, like the pyrroles, pyrrolidine, pyrrolidone, pyridine, morpholine, pyrazine, piperidines 、 oxazole and thiazole; And lower alkyl alkyl quaternary ammonium base, like tetramethylammonium hydroxide, tetraethylammonium hydroxide, hydroxide four propylamine, 2-hydroxyl-hydrogen-oxygen trimethylammonium, 1-hydroxypropyl ammonium hydroxide, 2-hydroxyethylammoniumhydroxide hydroxide.
Further, above-described a kind of anticorrosion alkaline development fluid composition, the alkali source of the wherein said organic base WS is a tetramethylammonium hydroxide, the said organic base WS is the WS of tetramethylammonium hydroxide.
Further; Above-described a kind of anticorrosion alkaline development fluid composition; Wherein said development accelerator is the compound of organic amine, is selected from one or more compositions of dimethylamine, triethylamine, propylamine, aniline, N-toluidine, monoethanolamine, isopropanolamine, diglycolamine.
Further, above-described a kind of anticorrosion alkaline development fluid composition, wherein said foam-breaking agent is the organic silicon modified by polyether foam-breaking agent.
In sum; The invention provides a kind of anticorrosion alkaline development fluid composition; Can be applicable to of the formation of photonasty novolac systems resist to ultraviolet (UV) exposure back image; But be not limited to this specific type, as long as the exposure back can be suitable for developer composition of the present invention for alkali-soluble positivity or negativity photoresist.And this developer composition is applicable to the making of small-medium size liquid crystal display device and metallic electrodes of semiconductor device; It can improve the bad problem of bringing after alkali-sensitive metal develops of figure; Guarantee the developing liquid developing function admirable simultaneously; PH value is stablized, is hanged down at the spray process developing process and bubble, and the life-span is long, and the image residue is few.
Embodiment
Below in conjunction with embodiment technical scheme of the present invention is elaborated.
Any one principal component that the alkali source of the organic base that the alkaline development fluid composition that the present invention relates to is used can use that existing photoresist is used to develop is selected from the straight chain primary amine, secondary amine, and tertiary amine is like propylamine, diethylamine, triethylamine; Aromatic amine is like benzyl amine; The heterocyclic bases that has one or more nitrogen, oxygen, like the pyrroles, pyrrolidine, pyrrolidone, pyridine, morpholine, pyrazine, piperidines 、 oxazole and thiazole; And lower alkyl alkyl quaternary ammonium base, like tetramethylammonium hydroxide, tetraethylammonium hydroxide, hydroxide four propylamine, 2-hydroxyl-hydrogen-oxygen trimethylammonium, 1-hydroxypropyl ammonium hydroxide, 2-hydroxyethylammoniumhydroxide hydroxide.These organic bases can use separately, also can two kinds and two or more combination use.
Also have, especially to use TMAH, 2-hydroxyethylammoniumhydroxide hydroxide the most common, wherein be preferably TMAH especially as the material of alkali source.
Alkaline development fluid composition alkali source concentration of the present invention can be selected suitable concentration according to the selection of alkali source, normally 0.1~10% weight of developer composition, more preferably 2~8% weight range.
When the alkali content of above-mentioned alkali source during less than 0.1% weight, the alkali after the exposure dissolves part and can't fully be dissolved in the developer solution, thereby can't form figure; And when the alkali content of above-mentioned alkali source greater than 10% the time; The resist loss increases in the territory, non-exposed area, causes line edge irregular, and live width narrows down.
Polyhydroxy-alcohol that alkaline development fluid composition of the present invention is used or alcohol ether are the polyhydroxy-alcohol or the alcohol ether of 2 and 2 above hydroxyls, and hydroxyl alcohol or alcohol ether can comprise monoethylene glycol, EGME, propylene glycol, propylene glycol monomethyl ether, butylene glycol, butylene glycol methyl ether, butylene glycol ether, glycerine, glycerine methyl ether, 1,2; 3; 4-penta tetrol, 1,2,3; 4-penta tetrol methyl ether, xylitol, wood sugar alcohol ether, diethylene glycol monobutyl ether, dipropylene glycol monomethyl ether, two polypropylene glycols.Be preferably butylene glycol, diethylene glycol monobutyl ether or two polypropylene glycols especially, these alcohol can use separately, also can two kinds and two or more combination use.
Micromolecular polyhydroxy-alcohol that alkaline development fluid composition of the present invention is used or alcohol ether are 2~20% weight of developer composition, more preferably 4~18% weight.If be less than 2%, the aluminium corrosion can not get good restraining, is crossing the development degree than causing corrosion to aluminium under the condition with higher.If surpass 20%, developing performance descends, and the required minimum energy of developing increases greatly, develops and totally or at all can't not develop, and it is bad to cause figure to produce.
If do not specialize; Development accelerator of the present invention is the compound of organic amine; A kind of comprising in dimethylamine, triethylamine, propylamine, aniline, N-toluidine, monoethanolamine, isopropanolamine, the diglycolamine; Development accelerator can use separately, also can two kinds and two or more combination use.
Development accelerator can obviously improve the polyhydroxy-alcohol of small-molecular weight or the adding of alcohol ether causes the problem that developing performance descends; Development accelerator according to the invention reaches the size to the membrane left rate loss percentage contribution of photoresist according to its alkalescence; Be preferably triethylamine, isopropanolamine; Be preferably isopropanolamine especially, development accelerator content is decided according to the content of organic base, but total amount is no more than 1%.When development accelerator was very few, it was insufficient to cause developing, and the back residue that develops increases, and the developer solution life-span is short; During development accelerator too much (greater than 1%), can cause the developer composition development capability strong excessively, aluminium is descended to the tolerance of alkali; Corrosion occurs, live width narrows down, the figure variation.
Alkaline development fluid composition of the present invention also comprises the organic silicon modified by polyether defoamer; Its principal ingredient is the potpourri for silicone oil and emulsifying agent, and the starting material of synthetic reaction comprises the serial silicone oil of the polysiloxane that uses the modification of simple alkane alcohol and as the polyol fatty acid ester and the ethylene oxide adduct thereof of emulsifying agent.The silicone oil that uses can be methyl-silicone oil, Methyl Hydrogen Polysiloxane Fluid, ethyl silicon oil, ethyl containing hydrogen silicone oil, ethoxy containing hydrogen silicone oil, phenyl silicone oil, methyl phenyl silicone oil, methylamino silicone oil, benzyl chloride base silicone oil.The alcohol that uses can be propyl alcohol, propylene glycol, isopropyl alcohol, normal butyl alcohol, 1,3 butylene glycol, isobutyl alcohol, n-amyl alcohol.Emulsifying agent can be one or both in sorbitan fatty acid ester (Span), the anhydrous sorbitol polyoxyethylene ether fatty ester (Tween).And the foam-breaking agent initial reactant that the present invention relates to is not limited to type recited above.
The amount of the foam-breaking agent that the alkaline development fluid composition adds is the weight of developer composition 0.005~1.0%.When antifoam content less than 0.005% the time, can not play good defoaming effect, can't froth breaking in the regulation process time.If antifoam content is greater than 1.0%, foam-breaking agent exists superfluous, and can not dissolve fully, and is unfavorable to photoresist thickness loss generation, and influences service life of equipment etc.
In addition; In order to keep pH value constant and prolong serviceable life of developer solution; If desired, developer composition of the present invention also can be added with the pH value correctives, and its content and kind can suitably be selected according to conditions such as the addition of developer solution accelerator and kinds.Its instantiation can comprise sodium phosphate/sodium dihydrogen phosphate, acetate, citric acid, phthalic acid, phenol.
Comparative Examples 1~8 and embodiment 9~12
With the ito glass of the good Mo/Al layer of vapor deposition, cut into onesize being placed horizontally in the different developer compositions, observe the T.T. that the Al layer has been corroded, to estimate the corrosion speed of developer solution to the Al layer.
Simultaneously, be standard with commercially available developer solution (WS of 2.38%TMAH), setting its developing powder value is 1, the relative velocity when investigating other developer solutions it being developed.Under same experimental conditions, use the development capability of Cannon exposure machine PLA-501F and Filmetrics film thickness gauge F-40 test developer composition and the membrane left rate before and after the exposure.Shown in following table one:
Table one: the performance test of Comparative Examples 1~8 and embodiment 9~12
Figure BSA00000339061300071
Figure BSA00000339061300081
Comparative Examples 1~2 shows do not having under the development accelerator situation with Comparative Examples 3~8, add a certain amount of polyhydroxy-alcohol or alcohol ether after the developer composition development capability descend, the amount of interpolation is many more, it is many more that developing powder descends.Comparative Examples 1~2 shows that with embodiment 9~10 after adding a certain amount of polyhydroxy-alcohol/alcohol ether, aluminium tolerance to alkali in the alkaline development composition increases, and membrane left rate increases.Comparative Examples 3~4 shows that with embodiment 11~12 be added with under the situation of development accelerator, the development capability of developer composition has a distinct increment with embodiment 9~10 and Comparative Examples 6~8.
Comparative Examples 3~6 and embodiment 10~12
On the basis of above experiment, the different content foam-breaking agent is joined in the above-mentioned developer composition, the foaming situation of observing is left standstill in the fully vibration in test tube of taking a sample.Shown in following table two:
Table two: Comparative Examples 3~6 and embodiment 10~12 foaming situation
Figure BSA00000339061300091
Comparative Examples 3 shows with Comparative Examples 4~6, add a certain amount of foam-breaking agent after, the foaming phenomenon obviously reduces; And addition is many more, and the speed of froth breaking is fast more, and embodiment 11 and embodiment 12 show; After adding a certain amount of foam-breaking agent, can obviously improve the phenomenon that developer solution bubbles easily.
Comparative Examples 3,4,7 and embodiment 9~11
On the basis of above experiment, different content PH correctives is joined in the above-mentioned developer composition, use the development capability and the developer solution aging conditions of Cannon exposure machine PLA-501F test developer composition.Use the membrane left rate of Filmetrics film thickness gauge F-40 test developer composition exposure front and back.Shown in following table three:
Table three: Comparative Examples 3,4,7 and embodiment 9~11 membrane left rates
Figure BSA00000339061300092
Figure BSA00000339061300101
Comparative Examples 3,4,7 and embodiment 9~11 show, add a certain amount of PH correctives after, strengthen the serviceable life of developer solution to some extent, the problem of having avoided frequent adjusting process and having changed liquid.
In sum, to comprise organic aqueous alkali, micromolecular polyhydroxy-alcohol or alcohol ether, development accelerator; The corrosion protection alkaline development composition of foam-breaking agent etc. can effectively prevent the corrosion of alkali sensitive metal, makes its tolerance in the alkaline development composition increase, and the back figure of avoiding developing brings bad problem; Developing liquid developing is functional simultaneously; Long service life, and in the low foaming of spray process developing process, even bubble.
The present invention still has multiple concrete embodiment, and all employings are equal to replacement or equivalent transformation and all technical schemes of forming all drop within the scope of requirement protection of the present invention.

Claims (8)

1. anticorrosion alkaline development fluid composition, it is characterized in that: said composition contains component and weight percentage does,
The organic base WS 0.1~10%;
Micromolecular polyhydroxy-alcohol or alcohol ether 2~20%;
Development accelerator (organic amine)<1%;
Foam-breaking agent (organic silicon modified by polyether) 0.005~1%.
2. a kind of anticorrosion alkaline development fluid composition as claimed in claim 1 is characterized in that: said organic base WS alkali content is 2~8%.
3. a kind of anticorrosion alkaline development fluid composition as claimed in claim 1, it is characterized in that: said micromolecular polyhydroxy-alcohol or alcohol ether mass percent are 4~18%.
4. a kind of anticorrosion alkaline development fluid composition as claimed in claim 1 is characterized in that: said micromolecular polyhydroxy-alcohol or alcohol ether are selected from the polyol of 2 and 2 above hydroxyls and one or more compositions in the oligomer thereof.
5. the described a kind of anticorrosion alkaline development fluid composition of claim 4, it is characterized in that: said micromolecule polyhydroxy-alcohol or alcohol ether are selected from monoethylene glycol, EGME, propylene glycol, propylene glycol monomethyl ether, butylene glycol, butylene glycol methyl ether, butylene glycol ether, glycerine, glycerine methyl ether, 1,2; 3; 4-penta tetrol, 1,2,3; 4-penta tetrol methyl ether, xylitol, wood sugar alcohol ether, diethylene glycol monobutyl ether, dipropylene glycol monomethyl ether, one or more compositions of two polypropylene glycols.
6. the described a kind of anticorrosion alkaline development fluid composition of claim 1, the alkali source that it is characterized in that the said organic base WS is a tetramethylammonium hydroxide, the said organic base WS is the WS of tetramethylammonium hydroxide.
7. a kind of anticorrosion alkaline development fluid composition as claimed in claim 1; It is characterized in that: described development accelerator is the compound of organic amine, is selected from one or more compositions of dimethylamine, triethylamine, propylamine, aniline, N-toluidine, monoethanolamine, isopropanolamine, diglycolamine.
8. a kind of anticorrosion alkaline development fluid composition as claimed in claim 1, it is characterized in that: said foam-breaking agent is the organic silicon modified by polyether foam-breaking agent.
CN2010105371052A 2010-11-09 2010-11-09 Anticorrosion alkaline developing composition Pending CN102466986A (en)

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Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105589303A (en) * 2015-12-23 2016-05-18 苏州瑞红电子化学品有限公司 High-capacity developing solution composition for thick film photoresists
CN105954984A (en) * 2016-06-25 2016-09-21 深圳市路维光电股份有限公司 Photomask development impregnating compound and photomask development method
CN106469655A (en) * 2015-08-18 2017-03-01 中芯国际集成电路制造(上海)有限公司 Projection method for packing, semiconductor device and electronic installation
CN108170010A (en) * 2017-12-29 2018-06-15 苏州碳方新材料科技有限公司 A kind of environmental protection developer solution
CN109195720A (en) * 2016-05-23 2019-01-11 富士胶片电子材料美国有限公司 For the stripping composition from semiconductor substrate removal photoresist
CN109240037A (en) * 2018-11-07 2019-01-18 天津市康华健晔医用材料有限公司 A kind of aobvious fixing bath liquid of environmental protection
US11208616B2 (en) 2019-04-24 2021-12-28 Fujifilm Electronic Materials U.S.A., Inc. Stripping compositions for removing photoresists from semiconductor substrates
CN114755899A (en) * 2022-06-15 2022-07-15 深圳市板明科技股份有限公司 High-resolution developer and developing method for fine circuit of circuit board and application of developer and developing method

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08160634A (en) * 1994-12-08 1996-06-21 Tokyo Ohka Kogyo Co Ltd Resist developer composition
CN1503057A (en) * 2002-10-30 2004-06-09 ��绯��ҵ��ʽ���� Defoaming and dispersing agent for photoresist developer
CN1570772A (en) * 2003-07-16 2005-01-26 三菱瓦斯化学株式会社 Anticorrosive developing composition
CN101053706A (en) * 2007-04-30 2007-10-17 南京四新科技应用研究所有限公司 Preparation for general defoaming agent and its application
CN101639634A (en) * 2008-07-30 2010-02-03 富士胶片株式会社 Alkaline developer for coloring light sensitive composition, image forming method, color filter and liquid crystal display device

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08160634A (en) * 1994-12-08 1996-06-21 Tokyo Ohka Kogyo Co Ltd Resist developer composition
CN1503057A (en) * 2002-10-30 2004-06-09 ��绯��ҵ��ʽ���� Defoaming and dispersing agent for photoresist developer
CN1570772A (en) * 2003-07-16 2005-01-26 三菱瓦斯化学株式会社 Anticorrosive developing composition
CN101053706A (en) * 2007-04-30 2007-10-17 南京四新科技应用研究所有限公司 Preparation for general defoaming agent and its application
CN101639634A (en) * 2008-07-30 2010-02-03 富士胶片株式会社 Alkaline developer for coloring light sensitive composition, image forming method, color filter and liquid crystal display device

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106469655A (en) * 2015-08-18 2017-03-01 中芯国际集成电路制造(上海)有限公司 Projection method for packing, semiconductor device and electronic installation
CN105589303A (en) * 2015-12-23 2016-05-18 苏州瑞红电子化学品有限公司 High-capacity developing solution composition for thick film photoresists
CN109195720A (en) * 2016-05-23 2019-01-11 富士胶片电子材料美国有限公司 For the stripping composition from semiconductor substrate removal photoresist
US10947484B2 (en) 2016-05-23 2021-03-16 Fujifilm Electronic Materials U.S.A., Inc. Stripping compositions for removing photoresists from semiconductor substrates
CN109195720B (en) * 2016-05-23 2021-10-29 富士胶片电子材料美国有限公司 Stripping composition for removing photoresist from semiconductor substrate
CN105954984A (en) * 2016-06-25 2016-09-21 深圳市路维光电股份有限公司 Photomask development impregnating compound and photomask development method
CN108170010A (en) * 2017-12-29 2018-06-15 苏州碳方新材料科技有限公司 A kind of environmental protection developer solution
CN109240037A (en) * 2018-11-07 2019-01-18 天津市康华健晔医用材料有限公司 A kind of aobvious fixing bath liquid of environmental protection
US11208616B2 (en) 2019-04-24 2021-12-28 Fujifilm Electronic Materials U.S.A., Inc. Stripping compositions for removing photoresists from semiconductor substrates
CN114755899A (en) * 2022-06-15 2022-07-15 深圳市板明科技股份有限公司 High-resolution developer and developing method for fine circuit of circuit board and application of developer and developing method
CN114755899B (en) * 2022-06-15 2022-09-16 深圳市板明科技股份有限公司 High-resolution developer and developing method for fine circuit of circuit board and application of high-resolution developer and developing method

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Application publication date: 20120523