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CN102456531B - 等离子体处理装置 - Google Patents

等离子体处理装置 Download PDF

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Publication number
CN102456531B
CN102456531B CN201110332469.1A CN201110332469A CN102456531B CN 102456531 B CN102456531 B CN 102456531B CN 201110332469 A CN201110332469 A CN 201110332469A CN 102456531 B CN102456531 B CN 102456531B
Authority
CN
China
Prior art keywords
gas
processing apparatus
metal parts
plasma processing
plate portion
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN201110332469.1A
Other languages
English (en)
Chinese (zh)
Other versions
CN102456531A (zh
Inventor
饭塚八城
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of CN102456531A publication Critical patent/CN102456531A/zh
Application granted granted Critical
Publication of CN102456531B publication Critical patent/CN102456531B/zh
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H01J37/3211—Antennas, e.g. particular shapes of coils
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32522—Temperature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)
CN201110332469.1A 2010-10-27 2011-10-27 等离子体处理装置 Expired - Fee Related CN102456531B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2010-240867 2010-10-27
JP2010240867A JP5745812B2 (ja) 2010-10-27 2010-10-27 プラズマ処理装置

Publications (2)

Publication Number Publication Date
CN102456531A CN102456531A (zh) 2012-05-16
CN102456531B true CN102456531B (zh) 2014-10-08

Family

ID=45995344

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201110332469.1A Expired - Fee Related CN102456531B (zh) 2010-10-27 2011-10-27 等离子体处理装置

Country Status (5)

Country Link
US (1) US20120103523A1 (ja)
JP (1) JP5745812B2 (ja)
KR (1) KR101287081B1 (ja)
CN (1) CN102456531B (ja)
TW (1) TWI512780B (ja)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6228400B2 (ja) * 2013-07-16 2017-11-08 東京エレクトロン株式会社 誘導結合プラズマ処理装置
US9472379B2 (en) * 2014-06-20 2016-10-18 Applied Materials, Inc. Method of multiple zone symmetric gas injection for inductively coupled plasma
JP6600990B2 (ja) * 2015-01-27 2019-11-06 東京エレクトロン株式会社 プラズマ処理装置
JP6877133B2 (ja) * 2016-03-28 2021-05-26 株式会社日立ハイテク プラズマ処理装置およびプラズマ処理方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1856211A (zh) * 2005-03-30 2006-11-01 东京毅力科创株式会社 等离子体处理装置和方法
CN101322226A (zh) * 2006-03-31 2008-12-10 东京毅力科创株式会社 基板处理装置以及处理气体喷出机构
CN101853764A (zh) * 2009-03-31 2010-10-06 东京毅力科创株式会社 等离子体处理装置

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US6077384A (en) * 1994-08-11 2000-06-20 Applied Materials, Inc. Plasma reactor having an inductive antenna coupling power through a parallel plate electrode
US5522934A (en) * 1994-04-26 1996-06-04 Tokyo Electron Limited Plasma processing apparatus using vertical gas inlets one on top of another
US5589737A (en) * 1994-12-06 1996-12-31 Lam Research Corporation Plasma processor for large workpieces
JP3104117B2 (ja) * 1995-01-13 2000-10-30 松下電器産業株式会社 プラズマ処理装置およびその方法
US5716451A (en) * 1995-08-17 1998-02-10 Tokyo Electron Limited Plasma processing apparatus
US6209480B1 (en) * 1996-07-10 2001-04-03 Mehrdad M. Moslehi Hermetically-sealed inductively-coupled plasma source structure and method of use
TW349234B (en) * 1996-07-15 1999-01-01 Applied Materials Inc RF plasma reactor with hybrid conductor and multi-radius dome ceiling
ATE396494T1 (de) * 1996-09-27 2008-06-15 Surface Technology Systems Plc Plasmabearbeitungsgerät
US6015465A (en) * 1998-04-08 2000-01-18 Applied Materials, Inc. Temperature control system for semiconductor process chamber
JP2000315598A (ja) * 1999-03-03 2000-11-14 Anelva Corp プラズマ処理装置
JP3609985B2 (ja) * 1999-05-13 2005-01-12 東京エレクトロン株式会社 誘導結合プラズマ処理装置
US6451161B1 (en) * 2000-04-10 2002-09-17 Nano-Architect Research Corporation Method and apparatus for generating high-density uniform plasma
JP3903730B2 (ja) * 2001-04-04 2007-04-11 松下電器産業株式会社 エッチング方法
US6674241B2 (en) * 2001-07-24 2004-01-06 Tokyo Electron Limited Plasma processing apparatus and method of controlling chemistry
US6887341B2 (en) * 2001-11-13 2005-05-03 Tokyo Electron Limited Plasma processing apparatus for spatial control of dissociation and ionization
KR100486712B1 (ko) * 2002-09-04 2005-05-03 삼성전자주식회사 복층 코일 안테나를 구비한 유도결합 플라즈마 발생장치
US6829056B1 (en) * 2003-08-21 2004-12-07 Michael Barnes Monitoring dimensions of features at different locations in the processing of substrates
US20050145341A1 (en) * 2003-11-19 2005-07-07 Masaki Suzuki Plasma processing apparatus
US7780791B2 (en) * 2004-06-30 2010-08-24 Lam Research Corporation Apparatus for an optimized plasma chamber top piece
JP5013393B2 (ja) * 2005-03-30 2012-08-29 東京エレクトロン株式会社 プラズマ処理装置と方法
EP2087778A4 (en) * 2006-08-22 2010-11-17 Mattson Tech Inc INDUCTIVE PLASMA SOURCE WITH HIGH COUPLING EFFICIENCY
US9184072B2 (en) * 2007-07-27 2015-11-10 Mattson Technology, Inc. Advanced multi-workpiece processing chamber
JP5396745B2 (ja) * 2008-05-23 2014-01-22 東京エレクトロン株式会社 プラズマ処理装置
JP5227245B2 (ja) * 2009-04-28 2013-07-03 東京エレクトロン株式会社 プラズマ処理装置
KR101081743B1 (ko) * 2009-08-17 2011-11-09 주성엔지니어링(주) 기판처리장치
WO2011022612A2 (en) * 2009-08-21 2011-02-24 Mattson Technology, Inc. Inductive plasma source
US20120186746A1 (en) * 2009-09-29 2012-07-26 Ulvac, Inc. Plasma etching apparatus
US20110120375A1 (en) * 2009-11-23 2011-05-26 Jusung Engineering Co., Ltd. Apparatus for processing substrate
US20110278260A1 (en) * 2010-05-14 2011-11-17 Applied Materials, Inc. Inductive plasma source with metallic shower head using b-field concentrator

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1856211A (zh) * 2005-03-30 2006-11-01 东京毅力科创株式会社 等离子体处理装置和方法
CN101322226A (zh) * 2006-03-31 2008-12-10 东京毅力科创株式会社 基板处理装置以及处理气体喷出机构
CN101853764A (zh) * 2009-03-31 2010-10-06 东京毅力科创株式会社 等离子体处理装置

Also Published As

Publication number Publication date
US20120103523A1 (en) 2012-05-03
CN102456531A (zh) 2012-05-16
TWI512780B (zh) 2015-12-11
JP2012094690A (ja) 2012-05-17
KR101287081B1 (ko) 2013-07-17
KR20120047793A (ko) 2012-05-14
TW201237922A (en) 2012-09-16
JP5745812B2 (ja) 2015-07-08

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PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
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GR01 Patent grant
CF01 Termination of patent right due to non-payment of annual fee
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20141008

Termination date: 20191027