CN102455973A - Method for setting data field to erase data by using residual space of Flash chip - Google Patents
Method for setting data field to erase data by using residual space of Flash chip Download PDFInfo
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- CN102455973A CN102455973A CN2010105123531A CN201010512353A CN102455973A CN 102455973 A CN102455973 A CN 102455973A CN 2010105123531 A CN2010105123531 A CN 2010105123531A CN 201010512353 A CN201010512353 A CN 201010512353A CN 102455973 A CN102455973 A CN 102455973A
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Abstract
The invention discloses a method for setting a data field to erase data by using a residual space of a Flash chip. The method comprises the steps of: developing a data storage space on the Flash chip, namely, replacing an EEPROM (Electrically Erasable Programmable Read Only Memory) chip by using a partial residual space of the Flash chip to be used as the data storage area, dividing the data storage area in the Flash chip into a plurality of storage cells having same storage spaces and being capable of meeting the preset minimum erasable cell, and numbering all storage areas in the data storage area respectively according to a natural number coding rule and setting a point sign whether being used in current in each storage cell; and then controlling erasing of the data in the data storage space developed on the Flash chip by using a software mode so that each storage cell circularly carries out data erasing. Due to the adoption of the method, the EEPROM (serial storage) chip can be saved, simplified design of a machine circuit is realized, thus the design cost is saved and the machine cost is reduced, the life cycle of the Flash chip can be prolonged under the condition of saving the EEPROM, and the purpose of enhancing the product competitiveness is achieved.
Description
Technical field
The present invention relates to a kind of Computer Applied Technology field, particularly relate to the method that a kind of Flash of utilization chip remaining space is provided with the erasable data in data field.
Background technology
Improving constantly and continuous advancement in technology of Along with people's living standard, increasing electronic product enters in the middle of people's the life.Nowadays in a lot of consumer electronics products; Because more and more the very huge of program code change that cause of the function that product needed realizes can't add that outside EEPROM (serial storage) just can realize various functions controls by a CPU who self has internal storage space as early stage.Normally adopt the application mode of MCU+RAM+Flash+EEPROM in the existing scheme; Shown in Figure 1 is exactly the hardware configuration synoptic diagram that existing scheme is used always; It includes MCU chip, Flash chip (flash memory), eeprom chip; This has been to use very at large in consumption electronic product, and its basic characteristics are to store data with eeprom chip, come stored programme with FLASH; Be the program among the Flash and the data read among the EEPROM to be taken out be stored among the SRAM during use, realize the various functions of machine thus.
People know that the erasable number of times of Flash Memory (flash memory) is generally 100,000 times, and the erasable number of times of EEPROM (serial storage) is 1,000,000 times; Because there is this difference in both storage unit on serviceable life, therefore, all be to come program code stored in now a lot of electronic products with FLASH; Often need data updated and store with EEPORM, simultaneously, in one design proposal; The space of FLASH is all bigger, and except program code, the space of FLASH also has very big residue.
Therefore, in existing design proposal, its drawback is exactly: need eeprom chip on the one hand, the hardware cost of product is risen; On the other hand, the space of FLASH also has very big residue, the waste that has caused hardware to use.
Summary of the invention
The objective of the invention is to overcome the deficiency of prior art; Provide a kind of Flash of utilization chip remaining space that the method for the erasable data in data field is set; Through on the Flash chip, opening up data space, and the mode of utilizing software is to erasable control of data of the data space opened up on the Flash chip, the use that both can save EEPROM (serial storage) chip; Realize the simplified design of machine circuit; Thereby save design cost and the reduction that realizes machine cost can be implemented in the life cycle that can also prolong product under the condition of practicing thrift EEPROM again, reach the purpose that strengthens product competitiveness.
The technical solution adopted for the present invention to solve the technical problems is: a kind of Flash of utilization chip remaining space is provided with the method for the erasable data in data field; Be to utilize the part remaining space of Flash chip to replace eeprom chip to open up to be the data storage area; Data storage area in the Flash chip is divided into a plurality ofly has same memory space and storage sub-district that can satisfy the minimum erasable unit that sets in advance; Whether and all storage sub-districts are numbered in the data storage area according to the natural number coding rule respectively, and in each storage sub-district, to be provided be the pointer sign of current use;
In erasable data procedures, it comprises the steps:
A. program initialization;
B.MCU searches the storage sub-district of the pointer sign with current use from the data storage area of Flash chip; And the numerical value assignment that will store the numbering of sub-district in the data storage area is given the magnetic region index; Simultaneously, with the deposit data of this storage in sub-district corresponding data space in the region of memory;
C.MCU with numerical value+1 of magnetic region index after again assignment give the magnetic region index;
D.MCU judges the numerical value of numbering of magnetic region index whether greater than the numerical value of the maximum numbering of stored sub-district, data storage area, and being judged as is to continue next step, otherwise changes step f;
E.MCU is changed to 0 with the numerical value of magnetic region index;
F.MCU has judged whether the erasable order in Flash data field, if there is not erasable order, then continues this step and judges, if erasable order is arranged, then changes next step;
G.MCU carries out the erasable processing of data to magnetic region index storage sub-district pointed;
Whether h.MCU is 0 to judge to the numerical value of magnetic region index, when being judged as 0, continues next step, otherwise changes step j;
The pointer sign of the storage sub-district that i.MCU is pointed with the magnetic region index is designated as current use, simultaneously, the pointer sign that has maximum storage sub-district of numbering in the data storage area is designated as non-current use; Then return step c;
The pointer sign of the storage sub-district that j.MCU is pointed with the magnetic region index is designated as current use, and simultaneously, the pointer sign of the storage sub-district that the numerical value-1 of the numbering of magnetic region index is pointed is designated as non-current use; Then return step c.
A kind of Flash of utilization chip remaining space of the present invention is provided with the method for the erasable data in data field, and being often to need change in program, needs the data preparation of real-time storage to come out after the change, in internal memory, hews out corresponding space and comes correspondence to deposit this data.Data of one frequent especially change can be not too many, and the data that often do not change then do not need special processing, gets final product according to the Flash storage mode of routine.
In the redundant space of Flash, open up a data memory block and be used for store data specially, the data storage area is made up of a plurality of storages sub-district, and the storage sub-district is the minimum erasable unit of Flash, so the space requirement of opening up is the multiple of storage sub-district.
With a plurality of storages sub-district in order number consecutively arrange, numbering is according to the natural number coding rule, promptly 0; 1,2,3; 4,5 ... Deng, whether specify a special address (for example first byte address) to be used for writing down this storage sub-district in each storage sub-district is the pointer sign of the storage sub-district of current use; If current pointer then is masked as a symbol, otherwise be masked as another symbol.If desired the corresponding storage sub-district of current pointer there is the write operation of carrying out data; So the pointer byte sign is write this symbol; And the pointer flag byte of previous storage cell number is rewritten as another symbol by this symbol; In internal memory, current storage cell number is added 1 then, carry out cycling.The erasable number of times of each storage sub-district is 100,000 times; So a plurality of such as 16 the storage sub-districts then altogether can be erasable 1,600,000 times; Like this through exchanging the mode that Flash extends working time for suitable Flash space; Just improved and used Flash to come the life cycle when the machine of storage data, service life of a machine can surpass the machine of the original EEPROM of use basically.
The invention has the beneficial effects as follows; Owing to adopted on the Flash chip and opened up data space; Promptly utilize the part remaining space of Flash chip to replace eeprom chip to open up and be the data storage area; Data storage area in the Flash chip is divided into a plurality ofly has same memory space and storage sub-district that can satisfy the minimum erasable unit that sets in advance; Whether and all storage sub-districts are numbered in the data storage area according to the natural number coding rule respectively, and in each storage sub-district, to be provided be the pointer sign of current use; The mode of utilizing software then is to erasable control of data of the data space opened up on the Flash chip; It is erasable to make each storage sub-district circulation carry out data, this method, the use that both can save EEPROM (serial storage) chip; Realize the simplified design of machine circuit; Thereby save design cost and the reduction that realizes machine cost can be implemented in the life cycle that can also prolong product under the condition of practicing thrift EEPROM again, reach the purpose that strengthens product competitiveness.
Below in conjunction with accompanying drawing and embodiment the present invention is done further explain; But the method that a kind of Flash of utilization chip remaining space of the present invention is provided with the erasable data in data field is not limited to embodiment.
Description of drawings
Fig. 1 is that the hardware of prior art connects synoptic diagram;
Fig. 2 is that hardware of the present invention connects synoptic diagram;
Fig. 3 is an erasable data flowchart of the present invention.
Embodiment
Embodiment; A kind of Flash of utilization chip remaining space of the present invention is provided with the method for the erasable data in data field, is to utilize the part remaining space of Flash chip to replace eeprom chip to open up to be the data storage area, therefore; As shown in Figure 2; In the hardware configuration synoptic diagram of the present invention, only include MCU chip, Flash chip (flash memory), and do not have eeprom chip.
A kind of Flash of utilization chip remaining space of the present invention is provided with the method for the erasable data in data field; Be to utilize the part remaining space of Flash chip to replace eeprom chip to open up to be the data storage area; Data storage area in the Flash chip is divided into a plurality ofly has same memory space and storage sub-district that can satisfy the minimum erasable unit that sets in advance; Whether and all storage sub-districts are numbered in the data storage area according to the natural number coding rule respectively, and in each storage sub-district, to be provided be the pointer sign of current use;
As shown in Figure 3, in erasable data procedures, it comprises the steps:
A. program initialization; Shown in the frame 101 of Fig. 3;
B.MCU searches the storage sub-district of the pointer sign with current use from the data storage area of Flash chip; And the numerical value assignment that will store the numbering of sub-district in the data storage area is given the magnetic region index; Simultaneously, with the deposit data of this storage in sub-district corresponding data space in the region of memory; Shown in the frame 102 of Fig. 3;
C.MCU with numerical value+1 of magnetic region index after again assignment give the magnetic region index; Shown in the frame 103 of Fig. 3;
D.MCU judges the numerical value of numbering of magnetic region index whether greater than the numerical value of the maximum numbering of stored sub-district, data storage area, and being judged as is to continue next step, otherwise changes step f; Shown in the frame 104 of Fig. 3;
E.MCU is changed to 0 with the numerical value of magnetic region index; Shown in the frame 105 of Fig. 3;
F.MCU has judged whether the erasable order in Flash data field, if there is not erasable order, then continues this step and judges, if erasable order is arranged, then changes next step; Shown in the frame 106 of Fig. 3;
G.MCU carries out the erasable processing of data to magnetic region index storage sub-district pointed; Shown in the frame 107 of Fig. 3;
Whether h.MCU is 0 to judge to the numerical value of magnetic region index, when being judged as 0, continues next step, otherwise changes step j; Shown in the frame 108 of Fig. 3;
The pointer sign of the storage sub-district that i.MCU is pointed with the magnetic region index is designated as current use, simultaneously, the pointer sign that has maximum storage sub-district of numbering in the data storage area is designated as non-current use; Then return step c; Shown in the frame 109 of Fig. 3;
The pointer sign of the storage sub-district that j.MCU is pointed with the magnetic region index is designated as current use, and simultaneously, the pointer sign of the storage sub-district that the numerical value-1 of the numbering of magnetic region index is pointed is designated as non-current use; Then return step c; Shown in the frame 110 of Fig. 3.
A kind of Flash of utilization chip remaining space of the present invention is provided with the method for the erasable data in data field, and being often to need change in program, needs the data preparation of real-time storage to come out after the change, in internal memory, hews out corresponding space and comes correspondence to deposit this data.Data of one frequent especially change can be not too many, if the space of opening up does not need the BYTE greater than 4K, the data that often do not change then do not need special processing, gets final product according to the Flash storage mode of routine.
In the redundant space of Flash, open up a data memory block Block (64K Byte) unit and be used for store data specially; Each data storage area Block is made up of 16 storage sub-district Sector (4K Byte); Storage sub-district Sector is the minimum erasable unit of Flash; So the space requirement of opening up is the multiple of 4K Byte, the data of storage then can be opened up a plurality of Block unit according to actual needs greater than 4K Byte if desired; The Sector number of each visit also needs corresponding adjustment simultaneously; When for example opening space is 2 Block, then each visit is exactly needs 2 Sector (8K Byte), according to actual needs the size of storage space.
With 16 storage sub-district Sector number consecutively arrangements in order (numbering from 0 to 15); Whether be the pointer sign (Flag) of the storage sub-district Sector of current use, if current pointer then is masked as 7F (also can other numerical value just give an example) here otherwise is masked as 1F if specifying a special address (for example first byte address) to be used for writing down this storage sub-district Sector among each storage sub-district Sector.If desired the corresponding storage sub-district Sector of current pointer there is the write operation of carrying out data; So the pointer byte sign is write 7F; And the pointer flag byte of previous storage sub-district Sector numbering is rewritten as 1F by 7F; In internal memory, current storage sub-district Sector numbering is added 1 then,, so just realized 16 write operations successively of storing sub-district Sector if storage sub-district Sector numbering equals 16 then storage sub-district Sector numbering just need deduct 16 promptly is changed to 0.The erasable number of times of each storage sub-district Sector is 100,000 times; 16 storage sub-district Sector then altogether can be erasable 1,600,000 times so; Like this through exchanging the mode that Flash extends working time for suitable Flash space; Just improved and used Flash to come the life cycle when the machine of storage data, service life of a machine can surpass the machine of the original EEPROM of use basically.
If the storage sub-district Sector number that circulation is write is increased to 32 levels that just substantially exceeded EEPROM service time that perhaps prolong more at most, can adjust the storage sub-district Sector number of needs visit according to actual conditions.
The foregoing description only is used for further specifying the method that a kind of Flash of utilization chip remaining space of the present invention is provided with the erasable data in data field; But the present invention is not limited to embodiment; Every foundation technical spirit of the present invention all falls in the protection domain of technical scheme of the present invention any simple modification, equivalent variations and modification that above embodiment did.
Claims (1)
1. method of utilizing Flash chip remaining space that the erasable data in data field are set; It is characterized in that: be to utilize the part remaining space of Flash chip to replace eeprom chip to open up to be the data storage area; Data storage area in the Flash chip is divided into a plurality ofly has same memory space and storage sub-district that can satisfy the minimum erasable unit that sets in advance; Whether and all storage sub-districts are numbered in the data storage area according to the natural number coding rule respectively, and in each storage sub-district, to be provided be the pointer sign of current use;
In erasable data procedures, it comprises the steps:
A. program initialization;
B.MCU searches the storage sub-district of the pointer sign with current use from the data storage area of Flash chip; And the numerical value assignment that will store the numbering of sub-district in the data storage area is given the magnetic region index; Simultaneously, with the deposit data of this storage in sub-district corresponding data space in the region of memory;
C.MCU with numerical value+1 of magnetic region index after again assignment give the magnetic region index;
D.MCU judges the numerical value of numbering of magnetic region index whether greater than the numerical value of the maximum numbering of stored sub-district, data storage area, and being judged as is to continue next step, otherwise changes step f;
E.MCU is changed to 0 with the numerical value of magnetic region index;
F.MCU has judged whether the erasable order in Flash data field, if there is not erasable order, then continues this step and judges, if erasable order is arranged, then changes next step;
G.MCU carries out the erasable processing of data to magnetic region index storage sub-district pointed;
Whether h.MCU is 0 to judge to the numerical value of magnetic region index, when being judged as 0, continues next step, otherwise changes step j;
The pointer sign of the storage sub-district that i.MCU is pointed with the magnetic region index is designated as current use, simultaneously, the pointer sign that has maximum storage sub-district of numbering in the data storage area is designated as non-current use; Then return step c;
The pointer sign of the storage sub-district that j.MCU is pointed with the magnetic region index is designated as current use, and simultaneously, the pointer sign of the storage sub-district that the numerical value-1 of the numbering of magnetic region index is pointed is designated as non-current use; Then return step c.
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| CN102944248A (en) * | 2012-10-30 | 2013-02-27 | 埃泰克汽车电子(芜湖)有限公司 | Expanding method of mileage totalized by automobile instruments |
| CN105022701A (en) * | 2015-07-27 | 2015-11-04 | 四川长虹电器股份有限公司 | Method for storing running state and parameters of air conditioner |
| CN105426317A (en) * | 2015-10-29 | 2016-03-23 | 宁波卓奥电子科技有限公司 | Storage method for storing user data into Flash and read method |
| CN105808168A (en) * | 2016-03-11 | 2016-07-27 | 宁波三星医疗电气股份有限公司 | Equalization method for prolonging service life of EEPROM |
| CN106095338A (en) * | 2016-06-13 | 2016-11-09 | 深圳创维空调科技有限公司 | The erasable implementation method of a kind of memory chip and realize system |
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| CN105022701A (en) * | 2015-07-27 | 2015-11-04 | 四川长虹电器股份有限公司 | Method for storing running state and parameters of air conditioner |
| CN105426317A (en) * | 2015-10-29 | 2016-03-23 | 宁波卓奥电子科技有限公司 | Storage method for storing user data into Flash and read method |
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| CN107146357A (en) * | 2017-07-14 | 2017-09-08 | 重庆和航科技股份有限公司 | Fire based on Internet of Things in advance, thing neutralize retroactive method and monitoring system afterwards |
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| CN109002399B (en) * | 2018-07-09 | 2021-05-18 | 北京智芯微电子科技有限公司 | Method for recording embedded equipment event |
| CN109189694B (en) * | 2018-07-28 | 2020-09-08 | 华中科技大学 | SCM data coding method and data storage method |
| CN109189694A (en) * | 2018-07-28 | 2019-01-11 | 华中科技大学 | A kind of data-encoding scheme and date storage method of SCM |
| CN109240622A (en) * | 2018-09-26 | 2019-01-18 | 潍柴动力股份有限公司 | A kind of method and system of EEPROM data write-in |
| CN109976676A (en) * | 2019-04-02 | 2019-07-05 | 苏州和欣致远节能科技有限公司 | A method of it promoting cumulative amount and number is written |
| CN109976676B (en) * | 2019-04-02 | 2022-04-05 | 苏州和欣致远节能科技有限公司 | Method for increasing cumulative number of write-in times |
| CN110736873A (en) * | 2019-10-29 | 2020-01-31 | 宁波三星医疗电气股份有限公司 | clock repairing method, power terminal and power system |
| CN112860184A (en) * | 2021-01-19 | 2021-05-28 | 上海龙旗科技股份有限公司 | Storage method and device of Flash chip |
| CN112860184B (en) * | 2021-01-19 | 2024-12-27 | 上海龙旗科技股份有限公司 | A Flash chip storage method and device |
| CN115421672A (en) * | 2022-11-04 | 2022-12-02 | 中诚华隆计算机技术有限公司 | Chip-based data storage method, system and storage medium |
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Application publication date: 20120516 |