CN102446948B - Light emitting element - Google Patents

Abstract

The invention provides a light emitting device. The light-emitting element comprises a light-emitting diode chip, a substrate and a bonding layer, wherein the light-emitting diode chip comprises a plurality of light-emitting diode units, a plurality of electrodes and at least one electrical connection layer. The light emitting diode units are electrically connected with each other through the electrical connection layer and are jointed with the substrate through the jointing layer; the substrate has a plurality of channels therein, and a plurality of external electrodes thereon for supplying power for the light emitting elements to emit light.

Description

Light emitting element

technical field

The present invention relates to a light-emitting element and a manufacturing method thereof, and more specifically, to a light-emitting element that utilizes an external electrode to improve light extraction efficiency.

Background technique

In recent years, due to the advancement of epitaxy and process technology, light emitting diodes (light emitting diodes, referred to as LEDs) have become one of the most promising solid-state lighting sources. Due to the limitation of physical mechanism, LED can only be driven by DC. Therefore, in any lighting design using LED as light source, it needs to be matched with electronic components such as rectification and step-down to convert the AC directly provided by the power company into LED. DC power supply. However, the addition of electronic components such as rectification and step-down will not only increase the cost of lighting, but also the low AC-DC conversion efficiency and large size of electronic components such as rectification and step-down will affect the reliability of LEDs in daily lighting applications. and service life.

AC light-emitting diode (ACLED) components can be directly operated on AC power without additional electronic components such as rectification and step-down, and have great potential to become the main product of fixed-point solid-state lighting in the future. Factors such as the applicable operating wattage, chip size, efficiency and yield improvement of ACLEDs will have a decisive impact on the future practicability and popularity of the device.

ACLED currently has two main structures: one is the reverse series-parallel design on the circuit, and the other is the design of a Whitworth bridge (bridge circuit) on the circuit. In the reverse series-parallel design, only 50% of the LED dies are lit during operation, while the design of the Wyeth bridge (bridge circuit) can light up half of the dies and the bridge in the bridge structure at the same time. The die to which the circuit is electrically connected. In contrast, the design of the Wyeth bridge (bridge circuit) can increase the light-emitting area, which is conducive to the improvement of ACLED efficiency.

However, in the ACLED structure, no matter the reverse series-parallel design or the Wyeth bridge (bridge circuit) design, an electrical connection layer between LED dies is required. As shown in Figure 1, it is a schematic diagram of the known AC LED electrode configuration method, in which the electrode 32 is the electrical connection layer in the ACLED, and 1a~1k, 1m, 1n, 1p, 1q, 1r, etc. are the ACLED tube cores. The light-emitting area covered by electrodes. As shown in FIG. 1 , it can be found that the electrical connection layer between the dies in the ACLED shields a considerable proportion of the light-emitting area of the dies, and this electrical connection structure also causes regional light-shielding and greatly reduces the luminous efficiency.

Contents of the invention

The invention proposes a light-emitting diode with low shading effect and a manufacturing method thereof.

The present invention proposes a light-emitting element, which includes a light-emitting diode chip, a substrate, and a bonding layer. They are electrically connected to each other, and bonded to the substrate through the bonding layer; there are multiple channels in the substrate, and multiple external electrodes on it to supply the power required for the light-emitting element to emit light.

The present invention also provides a light-emitting device, including a light-emitting diode chip, a sub-mount, and at least one conductive material (solder). The sub-carrier may have at least one circuit, the conductive material is located on the sub-carrier, the LED chip is bonded and/or fixed on the sub-carrier through the conductive material, and the LED chip is electrically connected to the sub-carrier. Wherein, the secondary carrier may be a lead frame or a large-sized mounting substrate, so as to facilitate the circuit planning of the light-emitting diode structure and improve its heat dissipation effect.

The present invention also proposes a light-emitting element, which is electrically connected to each LED unit in the LED chip through the arrangement of the electrical connection structure, so that each LED unit is connected in series, in parallel or in series-parallel; each LED Units can also be electrically connected as a Wyeth bridge (bridge circuit). In addition, fluorescent powder and/or scattering particles can also be filled between each LED unit to increase the luminous efficiency of the LED element, and/or perform light wavelength conversion to realize light mixing.

The invention also proposes a method for forming a light emitting element. First, an n-type semiconductor layer, an active layer, and a p-type semiconductor layer are formed on a growth substrate; a part of the n-type semiconductor layer, an active layer, and a p-type semiconductor layer are removed to form a plurality of light emitting diode units; each light emitting diode unit is removed The active layer and the p-type semiconductor layer of the inner part are to expose part of the upper surface of the n-type semiconductor layer; an n-type electrode is formed on the exposed surface of the n-type semiconductor layer, and a p-type electrode is formed on the surface of the p-type semiconductor layer; An insulating structure is formed between the diode units; an electrical connection structure is formed between the light-emitting diode units; an insulating material is coated on one side of the light-emitting diode chip with the electrical connection structure; a reflective layer is formed on the other side of the light-emitting diode chip opposite to the insulating structure ; form a bonding layer on the other side of the reflective layer relative to the light-emitting diode chip; use the bonding layer to bond with the permanent substrate; form a plurality of channels in the growth substrate corresponding to the electrodes of the light-emitting diode chip; The channels electrically connect the electrodes of the LED chip to the opposite side of the growth substrate; on the opposite side of the growth substrate corresponding to the plurality of channels, a plurality of external electrodes corresponding to the electrodes of the LED chip are respectively formed.

Description of drawings

Figure 1 is a schematic diagram of a known AC LED electrode configuration.

FIG. 2 is a schematic diagram of a light emitting device 100 disclosed in the present invention.

3A-3G are schematic diagrams of the method for forming the light-emitting device 100 disclosed in the present invention.

FIG. 4 is a schematic structural diagram of another light emitting element 200 .

FIG. 5 is a schematic structural diagram of another light emitting element 300 .

FIG. 6 is a schematic structural diagram of another implementation of another light emitting element 300 .

FIG. 7A is a top view of another light emitting element 400 .

FIG. 7B is an A-A'-A" cross-sectional view of another light-emitting element 400.

Explanation of reference signs

100: light emitting element

110: LED chip

120: insulating layer

130: reflective layer

140: bonding layer

150: permanent substrate

111: Growth substrate

112: LED unit

112a: n-type semiconductor layer

112b: active layer

112c: p-type semiconductor layer

113a, 113b: electrodes

114: Insulation structure

115: Electrical connection structure

116: channel

117: External electrode

200: light emitting element

250: permanent substrate

300: light emitting element

310: secondary carrier

320: Conductive material

330: Thermal conduction structure

400: light emitting element

411, 412: LED unit group

420: electrical contacts

B, C, D: nodes

B', C', D': nodes

Detailed ways

Please refer to FIG. 2 , which is a schematic diagram of a light emitting device 100 disclosed in the present invention. The light emitting device 100 includes a light emitting diode chip 110 , an insulating layer 120 , a reflective layer 130 , a bonding layer 140 and a permanent substrate 150 .

The surface of one side of the LED chip 110 has an insulating layer 120 to isolate the electrical conduction between the LED chip 110 and the reflective layer 130 , the bonding layer 140 and the permanent substrate 150 . The insulating layer 120 has a reflective layer 130 on the other side of the LED chip 110. The reflective layer 130 is used to reflect the light generated by the LED chip 110 to the same side, so as to increase the light extraction efficiency of the light emitting element 100. The reflective layer 130 has a bonding layer 140 on the other side of the LED chip 110 , and the bonding layer 140 bonds the permanent substrate 150 and the LED chip 110 . In this embodiment, the permanent substrate 150 may be, for example, a silicon substrate.

The LED chip 110 includes a growth substrate 111 , a plurality of LED units 112 , a plurality of electrodes 113 a and 113 b , an insulating structure 114 , an electrical connection structure 115 , channels 116 and external electrodes 117 . The LED unit 112 can be epitaxially grown on the growth substrate 111 by Metal-Organic Chemical Vapor Deposition, for example. In this embodiment, the LED unit 112 at least includes an n-type semiconductor layer 112a, an active layer 112b, and a p-type semiconductor layer 112c, which are sequentially grown on the growth substrate 111, wherein the active layer 112b may include multiple quantum In a multiple quantum well structure, a buffer layer (buffer layer) can be formed between the n-type semiconductor layer 112a and the growth substrate by ion doping or other growth methods, and the other side of the p-type semiconductor layer 112c relative to the active layer 112b A current spreading layer may be further formed on the active layer 112b to spread the current more evenly to the active layer 112b. The electrode 113a is an n-type electrode located on the n-type semiconductor layer 112a, and the electrode 113b is a p-type electrode located on the p-type semiconductor layer 112c. Respectively form ohmic contact (ohmic contact). There is an insulating structure 114 between the light-emitting diode units 112. In this embodiment, the width of the insulating structure 114 needs to be sufficient to isolate the electrical properties between the light-emitting diode units 112 on both sides of the insulating structure 114 that are not conducted through the electrical connection structure 115 to form effective insulation. . Through the insulating structure 114, the static electricity and short-circuit protection required by the LED unit 112 can be provided, so that the sides of the LED unit 112, especially the active layer 112b, are not affected or damaged by abnormal electrical conduction conditions. In this embodiment, the insulating structure 114 can be locally planarized by implementing a spin-on glass method.

One side of the insulating structure 114 has an electrical connection structure 115 to electrically connect the n-type electrode 113a of one of the LED units 112 with the p-type electrode 113b of another LED unit, and repeat this connection, thereby The LED units 112 in the LED chip 110 are connected in series or in parallel to form the LED chip 110 in which the LED units 112 are connected in series, parallel, series-parallel or reverse series-parallel. In addition, the light-emitting diode units 112 can be electrically connected in series (electrically connecting in series) to form a single chip (Multiple-dies Chip, MC) with multiple light-emitting diode units; Multiple monolithic structures can be applied to DC power or rectified AC power. It is also possible to electrically connect a plurality of LED units 112 in a single chip to form an electrical layout including a Wyeth bridge (bridge circuit), so as to be applied to an AC power supply. Through the electrical connection structure 115, the light emitting diode units 112 are electrically connected to each other. In the embodiment, the above-mentioned electrical connection makes the light emitting diode chip 110 pass through the two electrodes (that is, the light emitting diode unit 112 after being electrically connected) The n-type electrode of the middle LED unit 112 and the p-type electrode of the other LED unit 112 ) can supply the operating power required by each LED unit 112 .

In this embodiment, the growth substrate 111 is a sapphire substrate, and the preferred thickness after grinding is about 10 μm. The growth substrate 111 has a plurality of passages 116 passing through and/or penetrating the growth substrate 111 , wherein through refers to passing in a straight line, and through refers to passing in a non-uniform or non-linear manner, but still passes through the growth substrate 111 . The channel 116 is formed in the growth substrate 111 corresponding to the plurality of external electrodes 117. There is a conductive material in the channel 116 to electrically connect the external electrodes 117 and the light emitting diode unit 112. The external electrode 117 is located on the growth substrate 111, and The electrodes of the LED chip 110 are electrically connected, so that the LED chip 110 can obtain power supply through the external electrode 117 and the conductive material in the channel 116 . It is worth noting that the electrical connection between the LED units 112 can be directly formed through the electrical connection structure 115, and each LED unit 112 does not need to form an electrode separately, but only needs to form an electrode at a position corresponding to the external electrode 117 to provide electricity. Only a single connection is required, so the manufacturing process can be reduced and the reliability of the light-emitting diode chip can be increased.

Please refer to FIGS. 3A-3G , which are schematic diagrams of the method for forming the light emitting device 100 disclosed in the present invention. First, in FIG. 3A, the n-type semiconductor layer 112a, the active layer 112b, and the p-type semiconductor layer 112c are sequentially formed on the growth substrate 111; then, part of the n-type semiconductor layer 112a, the active layer 112b, and the p-type semiconductor layer 112c, forming a plurality of isolation structures 114 isolated from each other to form a plurality of epitaxial structures, in this embodiment, the insulation structure 114 reaches as deep as the growth substrate at the bottom of the n-type semiconductor layer 112a; thereafter, in FIG. 3B, remove The active layer 112b and the p-type semiconductor layer 112c in each epitaxial structure expose part of the upper surface of the n-type semiconductor layer 112a to the outside; in FIG. 3C, an n-type electrode is formed on the exposed surface of the n-type semiconductor layer 112a 113a, forming a p-type electrode 113b on the surface of the p-type semiconductor layer 112c to form a light emitting diode unit 112; in FIG. or further cover the surface of the p-type semiconductor layer 112c; then form an electrical connection structure 115 so that each LED unit 112 is electrically connected to each other, and the connection method of the electrical connection structure 115 is to electrically connect and emit light The n-type electrode 113 a of the diode unit 112 and the p-type electrode 113 b of another LED unit 112 . Alternatively, electrodes are not formed on each LED unit 112, and each LED unit 112 is directly electrically connected with an electrical connection structure 115, and each LED unit 112 in the LED chip 110 is electrically connected in series or in parallel to form a The light emitting diode chips 110 connected in series, in parallel or in series and parallel between the light emitting diode units 112 can also be connected in series to form a single chip (Multiple-dies Chip, MC) with a plurality of light emitting diode units. Voltage, using a single single-chip structure or combining multiple single-chip structures to apply to a DC power supply or a rectified AC power supply. It is also possible to electrically connect each LED unit 112 in a single-chip structure to include a Wyeth bridge (bridge circuit) for application to an AC power supply. The electrical connection structure 115 is partly or completely formed on the insulating structure 114 to isolate the electricity that is not conducted through the electrical connection structure 115 through the insulating structure 114 to form an effective insulation to prevent the LED unit 112 from being damaged. After completing the structure of the light emitting diode chip 110 through the above steps, in FIG. Form the reflective layer 130, or form a multi-layer structure with different refractive indices that can refract the light emitted by the LED chip 110, such as a Bragg reflective layer (BraggReflection Layer); A bonding layer (bonding layer) 140 is formed on the side, such as a wafer bonding layer (wafer bonding layer) or a metal bonding layer (metal bonding layer); in FIG. 3F, the bonding layer 140 is used to bond with the permanent substrate 150. In this embodiment, it is The permanent substrate 150 and the bonding layer 140 are bonded by wafer bonding, but not limited thereto. The permanent substrate 150 is a silicon substrate; 10 μm; then in FIG. 3G , by means of etching, etc., a plurality of channels 116 penetrating/penetrating the growth substrate 111 are formed in the growth substrate 111 corresponding to a plurality of electrodes of the light-emitting diode chip 110; used in the channels 116 The way of filling the conductive material is to electrically connect multiple electrodes of the light emitting diode chip 110 to the opposite side of the growth substrate 111; finally, on the opposite side of the growth substrate 111, corresponding to the part of the channel 116, respectively form the corresponding light emitting diode chips A plurality of external electrodes 117 of 110 electrodes.

Please refer to FIG. 4, which is a schematic structural diagram of another light-emitting element 200 disclosed in the present invention. In this embodiment, the elements with the same labels as those in FIG. The characteristics and usage are the same as those of the above-mentioned components, wherein the permanent substrate 250 is an aluminum nitride substrate, the channel 116 penetrates the permanent substrate 250 , and the external electrodes 117 are formed on the surface of the permanent substrate 250 opposite to the LED chip 110 .

Please refer to FIG. 5, which is a structural schematic diagram of another light-emitting element 300 disclosed in the present invention. In this embodiment, the elements with the same labels as those in FIG. The same characteristics and usage as the components in Figure 2. The light emitting device 300 includes a light emitting diode chip 110 , a sub-mount 310 and at least one conductive material 320 . The sub-carrier 310 can have at least one circuit, the conductive material 320 is located on the sub-carrier 310, or exists on the LED chip 110 and the sub-carrier 310 respectively, and the LED chip 110 is bonded and/or fixed on the sub-carrier 310 through the conductive material 320 on the sub-carrier 310 and electrically connect the light-emitting diode chip 110 to the sub-carrier 310, wherein the electrical connection can be formed by connecting the conductive material 320 to the external electrode 117, and the light-emitting diode chip 110 and the sub-carrier 310 can be soldered (soldering process) or adhesive process (adhesive process) to fix each other and complete the electrical connection. During the soldering process, the conductive material 320 can be a metal bump, and its material can be alloy, metal or solder. In the case of an alloy, the metal bumps distributed on the LED chip 110 and the sub-carrier 310 can be an alloy or a single metal respectively. The alloy can be formed by eutectic soldering process, or can be formed by isotropic An isotropically conductive adhesive (ICA) forms the metal bump. In the adhesion process, anisotropically conductive adhesive (ACA) in the form of paste or film, that is, anisotropically conductive film (ACF) and the like. The chip is connected to the sub-carrier 310 . Under the combination of pressure and heat, the electrical connection is completed, and the adhesive is permanently cured (cure) and thermally stable. The sub-carrier 310 can be a leadframe, a large-size mounting substrate or a circuit board (such as a PCB circuit board), so as to realize the circuit planning of the light-emitting element 300 and improve its heat dissipation effect. In this embodiment, the growth substrate 111 on the LED chip 110 can be selectively removed, and a heat conduction structure 330 is filled or formed between the LED chip 110 and the sub-carrier 310 to increase the heat dissipation efficiency of the light emitting element 300 . Furthermore, a roughing step can be performed on the surface of the LED chip 110 after the growth substrate is removed, so that the LED chip 110 has a roughened surface or a roughened structure, thereby increasing the light extraction efficiency of the light emitting device 300 . Phosphor and scattering particles can also be added to the insulating structure 114, wherein the phosphor can convert the light emitted by the LED unit 112 into different light colors to perform light color mixing. The light emitted by the diode unit 112 is converted into another light with a longer wavelength. For example, converting blue light into red light and yellow light to form white light output, or conversion of other light colors are also possible conversion methods. The scattering particles cause the emitted light entering the insulating structure 114 to scatter outward, so as to increase the light extraction efficiency of the LED chip 110. The materials of the scattering particles can be titanium dioxide (TiO ₂ ), silicon dioxide (SiO ₂ ) and combinations thereof. , but not limited to this. Phosphor and scattering particles in the above-mentioned insulating structure 114 can be added together or separately in the insulating structure 114, and its composition and concentration can be adjusted according to different products, so that the insulating structure 114 contains phosphor One of (Phosphor) and scattering particle (scattering particle) and its combination.

In addition, as shown in FIG. 6, the light-emitting element 300 may not remove the growth substrate 111, but implement a roughing step on the growth substrate 111, so that the growth substrate 111 has a roughened surface or a roughened structure, thereby increasing the number of light-emitting elements. Light extraction efficiency of 300. As described in FIG. 5, phosphors and scattering particles are also added into the insulating structure 114, wherein the phosphors can convert the light emitted by the LED unit into different light colors for light color mixing. Converting blue light to red light or yellow light to form white light output, or conversion of other light colors are also possible conversion methods. The scattering particles cause the emitted light entering the insulating structure 114 to scatter outward, so as to increase the light extraction efficiency of the LED chip 110. The materials of the scattering particles can be titanium dioxide (TiO ₂ ), silicon dioxide (SiO ₂ ) and combinations thereof. , but not limited to this. Phosphor and scattering particles in the above-mentioned insulating structure 114 can be added together or separately in the insulating structure 114, and its composition and concentration can be adjusted according to different products, so that the insulating structure 114 contains phosphor One of (Phosphor) and scattering particle (scattering particle) and its combination.

Please refer to FIG. 7A and FIG. 7B, which are another embodiment of the light-emitting element 400 disclosed in the present invention, wherein FIG. 7A is a top view of the light-emitting diode structure 400, and FIG. 7B is A-A'- of the light-emitting diode structure 400. A" sectional view. This embodiment utilizes the electrical connection between the sub-carrier 310 and the LED chip 110, so that the light-emitting element 400 has the possibility of flexible electrical configuration. In this embodiment, there is an electrical connection between the sub-carrier 310 and the LED chip 110. At least three electrical contacts 420, wherein the material of the electrical contacts 420 can be the same as or connected to the conductive material 320, and the LED chip 110 can include at least two groups of LED unit groups 411 and 412, wherein the LED unit groups 411 and 412 It includes at least a plurality of LED units 112 connected in series. For example, the LED unit groups 411 and 412 can withstand forward voltages with a root mean square value of approximately 120 volts and 240 volts, Or a forward voltage with a peak value or an RMS value of approximately 33 volts or 72 volts. The light emitting diode unit groups 411 and 412 may each have at least two electrical contacts 420, or the light emitting diode unit groups 411 and 412 may Shared electrical contact 420. In the case that the LED unit groups 411 and 412 can each have at least two electrical contacts 420, the electrical contact 420 of the LED unit group 411 and the other electrical contact of the LED unit group 412 420 are electrically connected to each other to form a common node C (common node), so that the electrical signal or power applied on the common node C can be transmitted and applied to the LED unit groups 411 and 412, or have other common node structures to generate In addition, the other electrical contact 420 except the common node C on the LED unit group 411 is the node B, and the other electrical contact 420 except the common node C on the LED unit group 412 is the node D. In this embodiment, the sub-carrier 310 is electrically connected to the nodes B, C, and D respectively by using the conductive material 320, so as to form nodes B', C', and D' corresponding to the nodes B, C, and D on the sub-carrier 310 ( Not shown in the figure), and the electrical signal or power applied to the nodes B', C', D' can be transmitted and applied to the corresponding nodes B, C, D. Under this architecture, when the nodes B' and D' are connected When the power supply is on, and the node C' is not electrically connected to the external power supply, the light-emitting diode unit groups 411 and 412 are electrically connected in series, and C' is electrically connected to one pole of the power supply, while the node B' and When D' is electrically connected to the other pole of the power supply, the light-emitting diode unit group 411 and 412 are electrically connected in parallel. This kind of structure can realize the light-emitting diode unit group 411 under a single chip and package structure. and the possibility of multiple electrical connections between 412, for example, when the light emitting element 40 0 is applied to a power system with a root mean square value of 120 volts, then the light-emitting element 400 can be electrically connected, packaged, and leaded in parallel, so that the light-emitting element 400 can be applied to a power system with a root mean square value of 120 volts system. When the light-emitting element 400 is applied to a power system with a root mean square value of 240 volts, the light-emitting element 400 can be electrically connected in series, packaged and leaded, so that the light-emitting element 400 can be applied to a power system with a root mean square value of 240 volts. 240 volt electrical system. Therefore, this embodiment only uses the same light-emitting element 400, which can be applied to various power system architectures, and uses the secondary carrier as a point of electrical connection with the power system, making the light-emitting element 400 reliable in application. The performance is improved, the production cost is reduced, and there is room for optimization of the price of the end product, thereby increasing the possibility of the application field of the light-emitting diode. It is worth mentioning that the aforementioned LED unit groups 411 and 412 are part of the same LED chip 110, but it is also possible to replace the LED unit groups 411 and 412 with two LED chips 110 to implement the present invention under the same spirit of the invention. Example.

The light-emitting element disclosed in the present invention may include a flip-chip packaging structure that emits light from the substrate side. Due to the characteristics of the flip-chip packaging structure that emits light from the substrate side, the light-emitting efficiency will not be reduced due to the shadowing of the light-emitting area. Therefore, there is no need to choose transparent materials for the conductive material between the LED units, and there is no need to design specially for the problem of reducing the shading area, or the shape or process of the conductive material, so that the light extraction efficiency can be increased, the cost can be reduced, and the selection of the conductive material can be avoided. Restricted.

In addition, the light emitting diode structure disclosed in the present invention can not only be packaged in known packaging methods, but also can be operated under the epitaxial process, which is different from the general packaging of the light emitting diode structure and the package body with a large difference in size. method, that is, the light-emitting diode structure disclosed in the present invention can be operated at the same wafer level, so the various components can have similar size levels (for example, in the same order of magnitude, or within 1 power of 10), such a In the future, not only will the process be simplified, there is no need to additionally package the light-emitting diode structure, and the light-emitting diode structure disclosed in the present invention can be packaged individually or severally with the packaging carrier, then the light-emitting diode structure disclosed in the present invention makes the lead wires, etc. The packaging steps are simpler, so that the packaging cost of the light emitting diode can be reduced and the reliability of the packaging body can be increased.

In the above-mentioned embodiments, the materials of the n-type semiconductor layer, p-type semiconductor layer and active layer include group III-V compounds, such as gallium nitride series or gallium phosphide series materials. The growth substrate includes, for example, at least one material selected from the group consisting of sapphire, silicon carbide, gallium nitride, and aluminum nitride. The n-type semiconductor layer, p-type semiconductor layer, and active layer can be single-layer or multi-layer structures, such as superlattice structures. In addition, the light-emitting diode chip of the present invention is not limited to being directly bonded or bonded to a heat-conducting or conductive substrate through a bonding method. Other forming methods, such as growing on the above-mentioned growth substrate by a growth method, also belong to the present invention. scope.

The current spreading layer includes transparent metal oxide, such as indium tin oxide (ITO), metal or metal alloy. The growth substrate includes, for example, at least one transparent or insulating material selected from the group consisting of sapphire, silicon carbide, gallium nitride, and aluminum nitride. The support substrate, for example, includes a transparent material selected from the group consisting of gallium phosphide, sapphire, silicon carbide, gallium nitride, and aluminum nitride; or, for example, includes a thermally conductive material selected from diamond, diamond-like carbon (DLC), zinc oxide, gold, silver, aluminum and other metal materials. The non-single crystal phase bonding layer comprises at least one material selected from the group consisting of metal oxides, non-metal oxides, polymers, metals, or metal alloys.

The various embodiments listed in the present invention are only used to illustrate the present invention, and are not intended to limit the scope of the present invention. Any obvious modifications or changes made by anyone to the present invention will not depart from the spirit and scope of the present invention.

Claims (27)

1. light-emitting component, comprising:

Light-emitting diode chip for backlight unit, comprise multiple light emitting diodes and at least one electric connection layer, wherein between the plurality of light emitting diode, be electrically connected to each other through this electric connection layer, wherein each the plurality of light emitting diode has the first semiconductor layer, the second semiconductor layer and active layer;

Knitting layer; And

Permanent substrate, sees through this knitting layer and engages with this light-emitting diode chip for backlight unit;

Wherein, this electric connection layer between the plurality of light emitting diode and this knitting layer,

Wherein, this light-emitting diode chip for backlight unit and this permanent substrate have the size of the same order of magnitude.

2. light-emitting component as claimed in claim 1, has insulation system between the plurality of light emitting diode, and has multiple scattering particless and/or fluorescent material in this insulation system.

3. light-emitting component as claimed in claim 2, wherein the plurality of light emitting diode sends first visible ray with the first wavelength, it is second visible ray with second wave length that this fluorescent material in this insulation system is switchable to this first visible ray of small part, wherein this second wave length this first wavelength be large.

4. light-emitting component as claimed in claim 1, wherein the plurality of light emitting diode forms two light emitting diode groups, in the plurality of light emitting diode group, has at least one common node; And form the one of following electric connection mode through this common node: series, parallel, connection in series-parallel connect, oppositely connection in series-parallel and bridge circuit connection.

5. light-emitting component as claimed in claim 1, be wherein following juncture one of them or its combination of the juncture between this light-emitting diode chip for backlight unit and this permanent substrate: metal bond and wafer engage.

6. light-emitting component as claimed in claim 1, also has reflector between this light-emitting diode chip for backlight unit and this knitting layer.

7. light-emitting component as claimed in claim 1, wherein this light-emitting diode chip for backlight unit also comprises that multiple electrodes are to provide the plurality of light emitting diode required electric power.

8. light-emitting component as claimed in claim 7, also comprises that multiple outer electrodes are electrically connected this light-emitting diode chip for backlight unit.

9. light-emitting component as claimed in claim 8, this light-emitting diode chip for backlight unit has multiple passages, and the plurality of outer electrode is electrically connected the plurality of electrode of this light-emitting diode chip for backlight unit through the plurality of passage.

10. light-emitting component as claimed in claim 9, wherein, this light-emitting diode chip for backlight unit also has growth substrate, and the plurality of light emitting diode is formed at a side of this growth substrate, and the plurality of outer electrode is formed at the opposite side of this growth substrate.

11. light-emitting components, comprising:

Light-emitting diode chip for backlight unit, comprise multiple light emitting diodes, at least two electrodes and at least one electric connection layer, wherein between the plurality of light emitting diode, be electrically connected to each other through this electric connection layer, wherein each the plurality of light emitting diode has the first semiconductor layer, the second semiconductor layer and active layer; And

Substrate, this light-emitting diode chip for backlight unit is formed at a side of this substrate, and wherein this substrate opposite side has multiple outer electrodes and is electrically connected this light-emitting diode chip for backlight unit,

Wherein this light-emitting diode chip for backlight unit and this substrate have the size of the same order of magnitude.

12. light-emitting components as claimed in claim 11, wherein this diode chip for backlight unit has coarse surface with respect to the opposite side of this substrate.

13. light-emitting components as claimed in claim 11, wherein have insulation system between the plurality of light emitting diode, and have multiple scattering particless and/or fluorescent material in this insulation system.

14. light-emitting components as claimed in claim 13, wherein the plurality of light emitting diode sends first visible ray with the first wavelength, it is second visible ray with second wave length that this fluorescent material in this insulation system is switchable to this first visible ray of small part, wherein this second wave length this first wavelength be large.

15. light-emitting components as claimed in claim 11, wherein the plurality of light emitting diode forms two light emitting diode groups, in the plurality of light emitting diode group, has at least one common node; And form the one of following electric connection mode through this common node: series, parallel, connection in series-parallel connect, oppositely connection in series-parallel and bridge circuit connection.

16. light-emitting components as claimed in claim 11, wherein this light-emitting diode chip for backlight unit also comprises that multiple electrodes are to provide the plurality of light emitting diode required electric power.

17. light-emitting components as claimed in claim 11, wherein this substrate has multiple passages, and the plurality of outer electrode sees through multiple passages and is electrically connected this light-emitting diode chip for backlight unit.

18. light-emitting components as claimed in claim 11, also there is insulating barrier, reflector and knitting layer, wherein this insulating barrier is positioned at the surface of this light-emitting diode chip for backlight unit, this reflector is positioned at the opposite side of this insulating barrier with respect to this light-emitting diode chip for backlight unit, this knitting layer is formed at the opposite side of this reflector with respect to this insulating barrier, engages this light-emitting diode chip for backlight unit and this substrate.

19. light-emitting components, comprising:

Light-emitting diode chip for backlight unit, comprise multiple light emitting diodes and at least one electric connection layer, wherein between the plurality of light emitting diode, see through this electric connection layer and be electrically connected to each other, wherein each the plurality of light emitting diode has the first semiconductor layer, the second semiconductor layer and active layer; And

Inferior carrier, has at least one conduction material and is positioned on this carrier, and by this conduction material, this light-emitting diode chip for backlight unit bonding is fixed on this carrier, and makes this light-emitting diode chip for backlight unit form electric connection,

Wherein this light-emitting diode chip for backlight unit and this carrier have the size of the same order of magnitude.

20. light-emitting components as claimed in claim 19, wherein this carrier be following one of them: lead frame, large scale are inlayed substrate or circuit board.

21. light-emitting components as claimed in claim 19, wherein between the plurality of light emitting diode, form insulation system to completely cut off the non-electric power via this electric connection layer conduction between the plurality of light emitting diode, and in this insulation system, there is multiple scattering particless and/or fluorescent material.

22. light-emitting components as claimed in claim 21, wherein the plurality of light emitting diode sends first visible ray with the first wavelength, it is second visible ray with second wave length that this fluorescent material in this insulation system is switchable to this first visible ray of small part, and this second wave length this first wavelength is large.

23. light-emitting components as claimed in claim 19, wherein the plurality of light emitting diode forms two light emitting diode groups, in the plurality of light emitting diode group, has at least one common node; And form the one of following electric connection mode through this common node: series, parallel, connection in series-parallel connect, oppositely connection in series-parallel and bridge circuit connection.

24. light-emitting components as claimed in claim 19, wherein also form conductive structure in this carrier and this light-emitting diode chip for backlight unit.

25. light-emitting components as claimed in claim 19, wherein the juncture between this light-emitting diode chip for backlight unit and this carrier is following juncture one or a combination set of: welding procedure and adhesion technique.

26. light-emitting components as claimed in claim 19, wherein this light-emitting diode chip for backlight unit also comprises that multiple electrodes are to provide the plurality of light emitting diode required electric power.

27. light-emitting components as claimed in claim 26, also have multiple outer electrodes, and this light-emitting diode chip for backlight unit has multiple passages, and the plurality of outer electrode is electrically connected the plurality of electrode of this light-emitting diode chip for backlight unit through the plurality of passage.