CN102420162A - Design of electrostatic chuck temperature control area - Google Patents
Design of electrostatic chuck temperature control area Download PDFInfo
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- CN102420162A CN102420162A CN2011101103656A CN201110110365A CN102420162A CN 102420162 A CN102420162 A CN 102420162A CN 2011101103656 A CN2011101103656 A CN 2011101103656A CN 201110110365 A CN201110110365 A CN 201110110365A CN 102420162 A CN102420162 A CN 102420162A
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Abstract
The invention discloses a design of a temperature control area of an electrostatic chuck, wherein the temperature control area of the electrostatic chuck is divided into a plurality of independent temperature control areas, the independent temperature control areas comprise a plurality of concentric circle structures, the innermost circle is an inner circle, the outermost circle is an outer circle, a middle circle is arranged between the inner circle and the outer circle, and the area between the inner circle and the middle circle is divided into a plurality of areas which do not contain structures which are concentric circles with the inner circle. The invention can give consideration to the problems of symmetry and asymmetry uniformity, has obvious effect on improving the problem of asymmetry uniformity and ensures the uniformity of the etching process in a larger range.
Description
Technical field
The present invention relates generally to semiconductor plasma etching apparatus temperature province control technology field, or rather, the present invention relates to the design of a kind of electrostatic chuck temperature controlled area.
Background technology
In microelectronics IC process for making; Particularly in etching, physical vapor deposition (PVD) and the chemical vapor deposition (CVD) process; General use electrostatic chuck ESC (Electrostatic Chuck) fixes, supports and transmits wafer, in technical process, occurs moving or inconsistent phenomenon to avoid wafer.Simultaneously, electrostatic chuck can be realized temperature control to wafer, to promote the uniformity of wafer engraving, in semiconductor processes, particularly among etching and the PVD, the requirement of process uniformity is strict.The uniformity of etching is to weigh through the variation of etch rate on a silicon chip or a plurality of silicon chip or the many batches of silicon chips, no matter is on Temperature Distribution or attraction distribute, and is all very strict to its inhomogeneity requirement.Temperature homogeneity can be controlled through dividing zones of different; Adopt inside and outside circle independently to control like part, as shown in Figure 1, this belongs to the dividing mode of traditional ESC temperature-controlled area; Generally form by two concentric circless; In also have adopting, interior in, at home and abroad, outer four Region control, these dividing mode all have a common ground, are the concentric circles mode that is:.It is obvious that above-mentioned concentrically ringed dividing mode is improved effect to problems such as common chip center and edge etching differences, can solve symmetry edge-middle heterogeneity problem, but then improve for the asymmetry homogeneity question limited, DeGrain.
Summary of the invention
Problem to above-mentioned existence; The object of the present invention is to provide the design of a kind of electrostatic chuck temperature controlled area; Can take into account symmetry and asymmetry homogeneity question; It is obvious to improve effect for the asymmetry homogeneity question, has guaranteed the uniformity of etching technics in a wider context, specifically realizes through following technical proposals:
The design of a kind of electrostatic chuck temperature controlled area; Wherein, the temperature-controlled area of electrostatic chuck is divided into several independent temperature control areas, comprises several concentric structures; Be positioned at the circle that is of inner ring; Be positioned at outmost turns for cylindrical, said between circle and the said cylindrical be middle circle, said in circle and said in zone between the circle be divided into and do not contain and the said interior round some zones of concentric structure that are.
The design of above-mentioned electrostatic chuck temperature controlled area, wherein, said middle circle is one.
The design of above-mentioned electrostatic chuck temperature controlled area, wherein, the zone between said interior circle and the said middle circle is divided into four zones.
The design of above-mentioned electrostatic chuck temperature controlled area, wherein, the zone between said interior circle and the said middle circle is divided into four fans by equalization and encircles the zone.
The design of above-mentioned electrostatic chuck temperature controlled area, wherein, the zone between said interior circle and the said middle circle is divided into four different fans of identical, adjacent two region areas of relative two region areas and encircles the zone.
The design of above-mentioned electrostatic chuck temperature controlled area, wherein, said interior radius of circle is 3-4cm.
The design of above-mentioned electrostatic chuck temperature controlled area, wherein, the said middle long 3-4cm of radius of a circle of the radius ratio outmost turns of said cylindrical.
The design of above-mentioned electrostatic chuck temperature controlled area, wherein, said each temperature province corresponds respectively to independently cooling and heating system is controlled respectively.
The design of above-mentioned electrostatic chuck temperature controlled area; Wherein, Through setting some zones between circle in said and the said middle circle for same temperature; And regulate said in the circle inner region, said in circle with said between the circle zone and said in regional three's temperature between the round and said cylindrical, deal with the symmetry edge-middle heterogeneity problem that in the wafer engraving process, produces.
The design of above-mentioned electrostatic chuck temperature controlled area; Wherein, Through keep said in the circle inner region, said in regional both temperature-resistant between circle and the said cylindrical; And regulate the some zones temperature separately between said interior circle and the said middle circle, deal with the asymmetry homogeneity question that in the wafer engraving process, produces.
Those skilled in the art reads the detailed description of following preferred embodiment, and with reference to after the accompanying drawing, of the present invention these are incited somebody to action obvious with otherwise advantage undoubtedly.
Description of drawings
With reference to appended accompanying drawing, describing embodiments of the invention more fully, yet appended accompanying drawing only is used for explanation and sets forth, and does not constitute limitation of the scope of the invention.
Fig. 1 is the structural representation that conventional electrostatic chuck temperature control subregion is divided;
Fig. 2 is the structural representation of most preferred embodiment of the division of electrostatic chuck temperature of the present invention controlled area.
Embodiment
The design of electrostatic chuck temperature of the present invention controlled area; Mainly be that temperature-controlled area with electrostatic chuck is divided into several independent temperature control areas; Comprise several concentric structures, be positioned at the circle that is of inner ring, be positioned at the cylindrical that is of outmost turns; Between interior circle and cylindrical is middle circle, and the zone between interior circle and the middle circle is divided into that not contain with interior circle be some zones of concentric structure.
Fig. 2 is most preferred embodiment of the present invention, and is as shown in Figure 2, and the quantity of middle circle is one, and interior radius of circle is 3-4cm, the long 3-4cm of middle radius of a circle of the radius ratio outmost turns of cylindrical.Zone between interior circle and the middle circle is divided into four zones; Represent interior circle inner region with A; Zone between interior circle and the middle circle is divided into four fan ring zones by equalization; Represent respectively with B, C, D, E that respectively B, C, D, four region areas of E equate that each temperature province corresponds respectively to independently cooling and heating system is controlled respectively.
To the symmetry edge that in the wafer engraving process, produces-middle heterogeneity problem, specifically be through B, C, D, four zones of E being regarded as a whole BCDE zone and set for same temperature, the temperature of regulating A, BCDE and F three realizes;
To the asymmetry homogeneity question that in the wafer engraving process, produces, specifically be through keeping the temperature-resistant of A and F, the temperature in adjusting B, C, D, four zones of E realizes.
Further, in B, C, D, four region areas of E, B, two region areas of D are identical, and C, two region areas of E are identical, but B, D are different with the area of C, E, specifically can arrange the area size in BC, D, four zones of E according to actual needs.
The present invention can effectively regulate symmetry heterogeneity problem, can significantly promote etching homogeneity, also can guarantee simultaneously to improve to asymmetric homogeneity question.
Through explanation and accompanying drawing, provided the exemplary embodiments of the ad hoc structure of embodiment, therefore, although foregoing invention has proposed existing preferred embodiment, yet these contents are not as limitation.For a person skilled in the art, read above-mentioned explanation after, various variations and revise undoubtedly will be obvious.Therefore, appending claims should be regarded whole variations and the correction of containing true intention of the present invention and scope as, and any and all scope of equal value and contents all should be thought still to belong in the intent of the present invention and the scope in claims scope.
Claims (10)
1. the design of an electrostatic chuck temperature controlled area; It is characterized in that, the temperature-controlled area of electrostatic chuck is divided into several independent temperature control areas, comprise several concentric structures; Be positioned at the circle that is of inner ring; Be positioned at outmost turns for cylindrical, said between circle and the said cylindrical be middle circle, said in circle and said in zone between the circle be divided into and do not contain and the said interior round some zones of concentric structure that are.
2. the design of electrostatic chuck temperature according to claim 1 controlled area is characterized in that, said middle circle is one.
3. the design of electrostatic chuck temperature according to claim 2 controlled area is characterized in that, the zone between said interior circle and the said middle circle is divided into four zones.
4. the design of electrostatic chuck temperature according to claim 3 controlled area is characterized in that, the zone between said interior circle and the said middle circle is divided into four fans by equalization and encircles the zone.
5. the design of electrostatic chuck temperature according to claim 3 controlled area is characterized in that, the zone between said interior circle and the said middle circle is divided into four different fans of identical, adjacent two region areas of relative two region areas and encircles the zone.
6. according to the design of any described electrostatic chuck temperature controlled area in the claim 1 to 5, it is characterized in that said interior radius of circle is 3-4cm.
7. according to the design of any described electrostatic chuck temperature controlled area in the claim 1 to 5, it is characterized in that the said middle long 3-4cm of radius of a circle of the radius ratio outmost turns of said cylindrical.
8. according to the design of any described electrostatic chuck temperature controlled area in the claim 1 to 5, it is characterized in that said each temperature province corresponds respectively to independently cooling and heating system is controlled respectively.
9. according to the design of the described electrostatic chuck temperature of claim 2 to 5 controlled area; It is characterized in that; Through setting some zones between circle in said and the said middle circle for same temperature; And regulate said in the circle inner region, said in circle with said between the circle zone and said in regional three's temperature between the round and said cylindrical, deal with the symmetry edge-middle heterogeneity problem that in the wafer engraving process, produces.
10. according to the design of the described electrostatic chuck temperature of claim 2 to 5 controlled area; It is characterized in that; Through keep said in the circle inner region, said in regional both temperature-resistant between circle and the said cylindrical; And regulate the some zones temperature separately between said interior circle and the said middle circle, deal with the asymmetry homogeneity question that in the wafer engraving process, produces.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011101103656A CN102420162A (en) | 2011-04-29 | 2011-04-29 | Design of electrostatic chuck temperature control area |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011101103656A CN102420162A (en) | 2011-04-29 | 2011-04-29 | Design of electrostatic chuck temperature control area |
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| CN102420162A true CN102420162A (en) | 2012-04-18 |
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| CN2011101103656A Pending CN102420162A (en) | 2011-04-29 | 2011-04-29 | Design of electrostatic chuck temperature control area |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104253060A (en) * | 2013-06-27 | 2014-12-31 | 甘志银 | Method for measuring and adjusting temperature in semiconductor process |
| CN108018536A (en) * | 2017-11-10 | 2018-05-11 | 上海华力微电子有限公司 | Pvd equipment and method |
| CN108511313A (en) * | 2013-02-01 | 2018-09-07 | 株式会社日立高新技术 | Plasma processing apparatus and sample stage |
| CN109473381A (en) * | 2018-10-31 | 2019-03-15 | 上海华力微电子有限公司 | Wet etching cleaning device and method |
| CN118763032A (en) * | 2024-09-09 | 2024-10-11 | 无锡尚积半导体科技有限公司 | A temperature compensation method and device for etching stage |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
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| US20080289767A1 (en) * | 2007-05-23 | 2008-11-27 | Takumi Tandou | Plasma processing apparatus |
| CN101465312A (en) * | 2007-12-18 | 2009-06-24 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Cartridge unit for fixing wafer and capable of controlling temperature with region |
| CN101501834A (en) * | 2006-08-10 | 2009-08-05 | 住友大阪水泥股份有限公司 | Electrostatic chuck device |
| CN101681870A (en) * | 2007-03-12 | 2010-03-24 | 东京毅力科创株式会社 | Dynamic temperature backside gas control for improved within-substrate processing uniformity |
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2011
- 2011-04-29 CN CN2011101103656A patent/CN102420162A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101501834A (en) * | 2006-08-10 | 2009-08-05 | 住友大阪水泥股份有限公司 | Electrostatic chuck device |
| CN101681870A (en) * | 2007-03-12 | 2010-03-24 | 东京毅力科创株式会社 | Dynamic temperature backside gas control for improved within-substrate processing uniformity |
| US20080289767A1 (en) * | 2007-05-23 | 2008-11-27 | Takumi Tandou | Plasma processing apparatus |
| CN101465312A (en) * | 2007-12-18 | 2009-06-24 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Cartridge unit for fixing wafer and capable of controlling temperature with region |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108511313A (en) * | 2013-02-01 | 2018-09-07 | 株式会社日立高新技术 | Plasma processing apparatus and sample stage |
| CN108511313B (en) * | 2013-02-01 | 2021-03-05 | 株式会社日立高新技术 | Plasma processing apparatus and sample stage |
| CN104253060A (en) * | 2013-06-27 | 2014-12-31 | 甘志银 | Method for measuring and adjusting temperature in semiconductor process |
| CN104253060B (en) * | 2013-06-27 | 2017-04-12 | 甘志银 | Method for measuring and adjusting temperature in semiconductor process |
| CN108018536A (en) * | 2017-11-10 | 2018-05-11 | 上海华力微电子有限公司 | Pvd equipment and method |
| CN109473381A (en) * | 2018-10-31 | 2019-03-15 | 上海华力微电子有限公司 | Wet etching cleaning device and method |
| CN118763032A (en) * | 2024-09-09 | 2024-10-11 | 无锡尚积半导体科技有限公司 | A temperature compensation method and device for etching stage |
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Application publication date: 20120418 |