CN102398886B - Encapsulation structure with microelectromechanical components and its manufacturing method - Google Patents

Abstract

The invention relates to a packaging structure with a micro-electromechanical element and a manufacturing method thereof, wherein the packaging structure with the micro-electromechanical element comprises: the packaging substrate is provided with a first circuit layer and a second circuit layer on two surfaces respectively, and a chip is embedded in the packaging substrate; the first dielectric layer is arranged on the packaging substrate and the chip; a third circuit layer disposed on the first dielectric layer; the second dielectric layer is arranged on the first dielectric layer and the third circuit layer, and a concave part is arranged on the surface of the second dielectric layer; a cover body arranged on the inner edge of the concave part and the top surface of the second dielectric layer at the periphery of the concave part, wherein the cover body part on the top surface of the second dielectric layer forms a cover body frame; the adhesive material is arranged on the frame of the cover body; and the surface of the substrate is provided with a micro-electromechanical element, and the micro-electromechanical element is jointed on the packaging substrate in a way of corresponding to the concave part. The packaging structure has smaller size, lower cost and better electrical property.

Description

Encapsulation structure with microelectromechanical components and its manufacturing method

technical field

The invention relates to a packaging structure and its manufacturing method, in particular to a packaging structure with micro-electromechanical components and its manufacturing method.

Background technique

Micro Electro Mechanical System (MEMS for short) is a tiny device with both electronic and mechanical functions. In manufacturing, it is achieved through various micro-fabrication technologies. Micro Electro Mechanical components can be placed on the surface of the chip. In addition, a protective cover or primer is used for encapsulation and protection, so that the internal micro-electro-mechanical components are not damaged by the external environment, and a micro-electro-mechanical encapsulation structure is obtained.

Please refer to FIG. 1 , which is a cross-sectional view of a conventional packaging structure with MEMS components. As shown in the figure, the existing package structure of micro-electromechanical components includes, for example, a lead frame 10 of a Quad Flat No Lead (QFN) type; a chip 11 is arranged on the lead frame 10; The element 12 is arranged on the chip 11; the cover 13 is arranged on the chip 11 and covers the chip 11; the aluminum layer 14 is arranged on the top surface of the cover 13; the bonding wire 15 is electrically connected to the chip 11 and the lead frame 10 and electrically connecting the aluminum layer 14 and the lead frame 10 ;

However, the above-mentioned existing MEMS element 12 needs to be arranged on a lead frame 10 with a considerable thickness, and an additional cover body 13 is required to protect the MEMS element 12, and this cover body 13 also has a considerable thickness, resulting in packaging The overall thickness of the structure is too large.

In addition, the existing packaging structure with MEMS components is electrically connected to the MEMS components and the lead frame by means of gold wires, which results in slow telecommunication transmission and decreased sensitivity between the two, and using gold wires as the telecommunication transmission path is also It will greatly increase the manufacturing cost of the packaging structure with MEMS components, and finally still need to cover the entire MEMS components and gold wires with packaging materials, and the packaging material will also increase the thickness of the overall packaging structure, such MEMS The packaging structure of components does not conform to the trend of end products towards lighter, thinner, smaller volume and lower production cost.

Therefore, how to avoid the various problems in the above-mentioned prior art, and make a packaging structure with micro-electromechanical components that can greatly reduce the overall volume, greatly reduce the production cost, and greatly improve the efficiency of telecommunication transmission has become an urgent problem to be solved at present. question.

Contents of the invention

In view of the above-mentioned defects in the prior art, the main purpose of the present invention is to provide a packaging structure and manufacturing method of a micro-electromechanical element with a smaller size and better electrical performance.

Another object of the present invention is to provide a micro-electromechanical device packaging structure and its manufacturing method, which can reduce manufacturing costs and simplify process steps.

To achieve the above object, the present invention provides a packaging structure with micro-electromechanical components, including: a packaging substrate having a first surface opposite to a second surface, and the packaging substrate has: a first circuit layer formed on the first surface The second circuit layer is formed on the second surface; and the conductive via penetrates the package substrate and electrically connects the first circuit layer and the second circuit layer; the chip is embedded in the package substrate, and the chip There are a plurality of electrode pads exposed on the first surface of the packaging substrate; the first dielectric layer is arranged on the first surface and the chip, and exposes the first circuit layer and electrode pads; the third circuit layer is provided on the first dielectric layer and electrically connected to the first circuit layer and the electrode pad; the second dielectric layer is arranged on the first dielectric layer and the third circuit layer, and the surface of the second dielectric layer has The recess and the perforation through the first and second dielectric layers; the cover body is arranged on the inner edge of the recess and the top surface of the second dielectric layer on the periphery of the recess, wherein the top surface of the second dielectric layer The cover part constitutes the frame of the cover; the first electrical connection pad is arranged on the second dielectric layer; the first conductive blind hole is arranged in the through hole and electrically connects the first circuit layer and the first electrical layer a connection pad; a bonding material disposed on the first electrical connection pad and the frame of the cover; and a base material having a microelectromechanical element and a second electrical connection pad disposed on the surface of the base material, and the base material is formed by The MEMS element is bonded to the packaging substrate in a manner corresponding to the recess.

The present invention also provides a method for manufacturing a packaging structure with micro-electromechanical components, comprising: preparing a packaging substrate having a first surface and a second surface opposite to each other, and the first surface and the second surface of the packaging substrate are respectively formed with first The circuit layer and the second circuit layer are electrically connected to the first circuit layer and the second circuit layer through the conductive vias penetrating the package substrate. A chip is embedded in the package substrate, and the chip has a plurality of exposed on the The electrode pads on the first surface of the packaging substrate; the first dielectric layer and the third circuit layer electrically connected to the electrode pads and the first circuit layer are sequentially formed on the first surface and the chip; on the first dielectric layer forming a second dielectric layer on the third circuit layer; removing part of the second dielectric layer to form a recess and forming a through hole through the first and second dielectric layers; on the inner edge of the recess and the periphery of the recess A cover is formed on the top surface of the second dielectric layer, wherein the cover portion on the top surface of the second dielectric layer constitutes a frame of the cover, and a first electrical connection pad is formed on the second dielectric layer, and A first conductive blind hole electrically connecting the first circuit layer and the first electrical connection pad is formed in the through hole; an adhesive material is formed on the first electrical connection pad and the frame of the cover; a surface is provided There is a base material with the micro-electro-mechanical element and the second electrical connection pad; and the base material and the packaging substrate are bonded in such a way that the micro-electro-mechanical element corresponds to the recess.

It can be seen from the above that the packaging structure with MEMS components of the present invention directly embeds chips in the packaging substrate, so the thickness and volume of the overall packaging structure can be reduced. Furthermore, the present invention electrically connects the chips, micro-electromechanical components, and the packaging substrate by embedding lines, and its telecommunication transmission efficiency is higher than that of the existing wire-bonding method, and its manufacturing cost is lower than that of the wire-bonding method; and the cover of the present invention The body can be formed simultaneously with the first electrical connection pad and the first conductive blind hole, so the process steps can be simplified. In addition, compared with the existing four-sided flat lead frame without pins, the arrayed solder balls formed by the present invention can provide more and denser electrical connection points, thereby expanding its application range.

Description of drawings

1 is a cross-sectional view of a prior art packaging structure with micro-electromechanical components;

2A to FIG. 2E are cross-sectional views of the packaging structure with micro-electromechanical components and its manufacturing method of the present invention, wherein FIG. 2C' is a schematic diagram showing the manufacturing method of forming the first solder mask layer.

Description of main component symbols:

10 lead frame

11, 22 chips

12, 41 microelectromechanical components

13, 28 cover body

14 aluminum layers

15 welding wire

16 Packaging material

2 package structure

20 package substrate

20a First surface

20b second surface

200 conductive vias

21a The first line layer

21b second line layer

221 electrode pad

23 The first dielectric layer

24 Third line layer

241 The third conductive blind hole

25 second dielectric layer

250 concave

26 Build-up structure

261 third dielectric layer

262 fourth line layer

263 The second conductive blind hole

264 Ball Pad

27 Second solder mask layer

270 Solder mask opening

281 Cover frame

29 The first electrical connection pad

290 perforations

291 The first conductive blind hole

30 Adhesive materials

31 solder balls

32 The first solder mask

40 substrate

401 Second electrical connection pad

402 metal frame

Detailed ways

Embodiments of the present invention are described below through specific examples, and those skilled in the art can easily understand other advantages and effects of the present invention from the content disclosed in this specification.

It should be noted that the structures, proportions, sizes, etc. shown in the drawings attached to this specification are only used to match the content disclosed in the specification, for those skilled in the art to understand and read, and are not used to limit the implementation of the present invention. condition, so it has no technical substantive meaning, and any modification of structure, change of proportional relationship or adjustment of size shall still fall within the scope of the present invention without affecting the effect and purpose of the present invention. The disclosed technical content may cover the range. At the same time, terms such as "upper, lower" and "one" quoted in this specification are only for the convenience of description, and are not used to limit the applicable scope of the present invention. Without substantive changes in technical content, it should also be regarded as the scope of the present invention that can be implemented.

Please refer to FIG. 2A to FIG. 2E , which are cross-sectional views of the packaging structure with MEMS components and its manufacturing method of the present invention.

First, as shown in FIG. 2A, a package substrate 20 is prepared. The package substrate 20 has a first surface 20a and a second surface 20b, and the first surface 20a and the second surface 20b are respectively formed with a first circuit layer 21a and a second circuit layer. The wiring layer 21b is electrically connected to the first wiring layer 21a and the second wiring layer 21b through the conductive via 200 penetrating through the packaging substrate 20 . A chip 22 is embedded in the packaging substrate 20 , wherein the chip 22 has a plurality of electrode pads 221 exposed on the first surface 20 a of the packaging substrate 20 , and the chip 22 can be an application specific integrated circuit (ASIC) chip. Next, a first dielectric layer 23 is formed on the first surface 20a and the chip 22, and a third circuit layer 24 is formed on the first dielectric layer 23, wherein the first dielectric layer 24 can be formed by laser perforation. A third conductive blind hole 241 is formed in the layer 23 to electrically connect the electrode pad 221 and the first wiring layer 21a; then, a second dielectric layer 25 is formed on the first dielectric layer 23 and the third wiring layer 24, The material of the second dielectric layer 25 can be a solder resist material or a photosensitive dielectric material. Moreover, the provided package substrate 20 may have a build-up structure 26 on the second surface, or may also form a build-up structure 26 on the second surface 20b of the package substrate 20 during the process, and the build-up structure 26 includes At least one third dielectric layer 261, a fourth circuit layer 262 formed on the third dielectric layer 261, and a plurality of circuits formed in the third dielectric layer 261 and electrically connected to the fourth circuit layer 262 and The second conductive blind hole 263 of the second circuit layer 21 b forms a second solder resist layer 27 on the build-up structure 26 .

As shown in FIG. 2B , a portion of the second dielectric layer 25 is removed by photolithography or a laser process to form a concave portion 250 and to form a hole through the first dielectric layer 23 and the second dielectric layer 25. The perforation 290, and then, the cover 28 is formed on the inner edge of the recess 250 and the top surface of the second dielectric layer 25 on the periphery of the recess 250, wherein the part of the cover 28 on the top surface of the second dielectric layer 25 constitutes cover frame 281, and form a first electrical connection pad 29 on the second dielectric layer 25 by plating process or deposition, and form an electrical connection pad 29 in the through hole 290 to connect the first circuit layer 21a and the second circuit layer 21a. A first conductive blind hole 291 is electrically connected to the pad 29 , wherein the material of the cover 28 can be metal, silicon, glass or ceramics.

As shown in FIG. 2C , an adhesive material 30 is formed on the first electrical connection pad 29 and the cover frame 281. The adhesive material 30 is a solder bump disposed on the first electrical connection pad 29 and an implant. A ring-shaped solder bump, solder paste or glass glue is provided on the cover frame 281 .

In addition, as shown in FIG. 2C', before forming the bonding material 30, the first solder resist layer 32 may also be formed on the second dielectric layer 25 and the first electrical connection pad 29, and a plurality of correspondingly exposed solder resist layers 32 may be formed. The opening of the first electrical connection pad 29 , and the bonding material 30 is formed in the opening, and the material of the first solder resist layer 32 can be a solder resist material or a photosensitive dielectric material.

As shown in FIG. 2D , a substrate 40 is provided with a microelectromechanical element 41 and a second electrical connection pad 401 on its surface. The material of the substrate 40 can be a silicon material, and the second electrical connection pad 401 passes through The adhesive material 30 is electrically connected to the first electrical connection pad 29, and the surface of the substrate 40 on the same side as the MEMS element 41 also includes a metal frame 402, and the MEMS element is connected to the MEMS element through the adhesive material 30. 41 is bonded to the base material 40 and the packaging substrate 20 in a manner corresponding to the concave portion 250 , that is, the cover frame 281 and the metal frame 402 are connected correspondingly through the bonding material 30 . The metal frame 402 connected to the cover frame 281 surrounds the MEMS element 41 to seal the MEMS element 41 inside the packaging structure. The MEMS element 41 can be a gyroscope (gyroscope), an accelerometer (accelerometer) or radio frequency microelectromechanical (RF MEMS) components.

As shown in FIG. 2E, the fourth circuit layer 262 of the outermost layer of the build-up structure 26 can also have a plurality of solder ball pads 264, and a plurality of corresponding exposed solder ball pads 264 are formed in the second solder resist layer 27. Holes 270 are opened in the solder resist layer, and solder balls 31 are formed on each of the solder ball pads 264. Finally, a singulation process (singulation) is performed to obtain a plurality of packaging structures 2 with MEMS components.

The present invention also provides a packaging structure 2 with micro-electromechanical components, including: a packaging substrate 20 having an opposite first surface 20a and a second surface 20b, and the packaging substrate 20 has: a first circuit layer 21a formed on the first on the surface 20a; the second circuit layer 21b is formed on the second surface 20b; and the conductive via 200 penetrates the package substrate 20 and electrically connects the first circuit layer 21a and the second circuit layer 21b; the chip 22 is embedded Buried in the packaging substrate 20, and the chip 22 has a plurality of electrode pads 221 exposed on the first surface 20a of the packaging substrate 20; the first dielectric layer 23 is provided on the first surface 20a and the chip 22, and expose the first circuit layer 21a and the electrode pad 221; the third circuit layer 24 is arranged on the first dielectric layer 23 and electrically connected to the first circuit layer 21a and the electrode pad 221; the second dielectric layer 25, disposed on the first dielectric layer 23 and the third circuit layer 24, the surface of the second dielectric layer 25 has a concave portion 250 and a through hole 290 penetrating through the first dielectric layer 23 and the second dielectric layer 25; The cover 28 is arranged on the inner edge of the recess 250 and the top surface of the second dielectric layer 25 on the periphery of the recess 250, wherein the part of the cover 28 on the top surface of the second dielectric layer 25 forms a cover frame 281; The first electrical connection pad 29 is disposed on the second dielectric layer 25; the first conductive blind hole 291 is disposed in the through hole 250 and electrically connects the first circuit layer 21a and the first electrical connection pad 29 the bonding material 30 is disposed on the first electrical connection pad 29 and the cover frame 281; and the substrate 40 has a microelectromechanical element 41 and a second electrical connection pad 401 disposed on the surface of the substrate 40, And the base material 40 is bonded to the packaging substrate 20 in such a way that the MEMS element 41 corresponds to the concave portion 250 .

In the above-mentioned package structure 2 with microelectromechanical components, the surface of the substrate 40 on the same side as the microelectromechanical component 41 also includes a metal frame 402, and the cover frame 281 is connected to the metal frame 402 through the bonding material 30 correspondingly. frame the second electrical connection pad 402 . In addition, the above-mentioned package structure 2 with MEMS components may further include a first solder resist layer 32 (as shown in FIG. 2C ′), which is disposed on the second dielectric layer 25 and the first electrical connection pad 29, the The material of the first solder resist layer 32 can be a solder resist material or a photosensitive dielectric material, and the first solder resist layer 32 has a plurality of corresponding openings exposing the first electrical connection pad 29, and the bonding material is formed on in this opening.

Furthermore, in the aforementioned package structure, a build-up structure 26 may also be included, which is disposed on the second surface 20a of the package substrate 20, and the build-up structure 26 includes at least one third dielectric layer 261 formed on the third dielectric layer. The fourth circuit layer 262 on the layer 261, and a plurality of second conductive blind holes 263 formed in the third dielectric layer 261 and electrically connecting the fourth circuit layer 262 and the second circuit layer 21b, and the increased The fourth circuit layer 262 on the outermost layer of the layer structure 26 also has a plurality of solder ball pads 264 .

In the package structure with micro-electromechanical components, a second solder resist layer 27 may also be included on the build-up structure 26, and the second solder resist layer 27 has a plurality of corresponding exposed solder ball pads. The solder mask openings 270 at 264 may further include solder balls 31 disposed on each of the solder ball pads 264 .

In the package structure with MEMS components, the chip 22 can be an application-specific integrated circuit (ASIC) chip, the material of the second dielectric layer 25 can be a solder resist material or a photosensitive dielectric material, and the cover 28 The material of the substrate 40 can be metal, silicon, glass or ceramics, the MEMS element 41 can be a gyroscope, an accelerometer or a radio frequency MEMS element, and the material of the substrate 40 can be a silicon material.

To sum up, the packaging structure with MEMS components of the present invention directly embeds chips in the packaging substrate, so the thickness and volume of the overall packaging structure can be reduced. Furthermore, the present invention electrically connects the chip, the micro-electromechanical element and the package substrate by embedding lines, and its telecommunication transmission efficiency is higher than that of the wire-bonding method, and its manufacturing cost is lower than that of the wire-bonding method. Moreover, the cover body of the present invention can be formed simultaneously with the first electrical connection pad and the first conductive blind hole, so the process steps can be simplified; moreover, compared with the existing QFN type lead frame, the array soldering formed by the present invention Balls can provide more and denser electrical connection points, thereby expanding its application range.

The above-mentioned embodiments are used to illustrate the principles and effects of the present invention, but not to limit the present invention. Any person skilled in the art can modify the above-mentioned embodiments without departing from the spirit and scope of the present invention. Therefore, the protection scope of the present invention should be based on the scope of the claims.

Claims (19)

1. an encapsulating structure for tool microcomputer electric component, is characterized in that, comprising:

There is the base plate for packaging of relative first surface and second surface, and this base plate for packaging has:

The first line layer, is formed on first surface;

The second line layer, is formed on second surface;

Conductive through hole, runs through this base plate for packaging and is electrically connected this first line layer and the second line layer;

Chip, is embedded in this base plate for packaging, and on this chip, has multiple electronic padses that expose to this base plate for packaging first surface;

The first dielectric layer, is located on this first surface and chip, and exposes outside this first line layer and electronic pads;

Tertiary circuit layer, is located on this first dielectric layer and is electrically connected this first line layer and electronic pads;

The second dielectric layer, is located on this first dielectric layer and tertiary circuit layer, the perforation that this second dielectric layer surface has recess and runs through this first and second dielectric layer;

Lid, be located at this recess inner edge, with the second dielectric layer top surface of recess periphery, wherein, the cap portion on this second dielectric layer top surface forms lid frame;

The first electric connection pad, is located on this second dielectric layer;

The first conductive blind hole, is located in this perforation and is electrically connected this first line layer and the first electric connection pad;

Then material, is located on this first electric connection pad and this lid frame; And

Base material, has microcomputer electric component and the second electric connection pad be located on substrate surface, and this base material is engaged on this base plate for packaging mode that should recess with this microcomputer electric component.

2. the encapsulating structure of tool microcomputer electric component according to claim 1, is characterized in that, also includes metal frame with this substrate surface of this microcomputer electric component homonymy, and by following corresponding this lid frame that connects of material.

3. the encapsulating structure of tool microcomputer electric component according to claim 1, it is characterized in that, also comprise welding resisting layer, be located on this second dielectric layer and the first electric connection pad, and this welding resisting layer has multiple correspondences exposes the perforate of this first electric connection pad, and then material is formed in this perforate.

4. the encapsulating structure of tool microcomputer electric component according to claim 1, it is characterized in that, also comprise layer reinforced structure, be located on this base plate for packaging second surface, this layer reinforced structure comprises at least one the 3rd dielectric layer, is formed at the 4th line layer and multiple the second conductive blind hole that is formed in the 3rd dielectric layer and is electrically connected the 4th line layer and the second line layer on the 3rd dielectric layer, and outermost the 4th line layer of this layer reinforced structure also has multiple solder ball pads.

5. the encapsulating structure of tool microcomputer electric component according to claim 4, is characterized in that, also comprises welding resisting layer, is located on this layer reinforced structure, has multiple correspondences and expose the respectively welding resisting layer perforate of this solder ball pad in this welding resisting layer.

6. the encapsulating structure of tool microcomputer electric component according to claim 5, is characterized in that, also comprises soldered ball, is located at respectively on this solder ball pad.

7. the encapsulating structure of tool microcomputer electric component according to claim 1, is characterized in that, the material of this second dielectric layer is anti-welding material or photosensitive dielectric material.

8. the encapsulating structure of tool microcomputer electric component according to claim 3, is characterized in that, the material of this welding resisting layer is anti-welding material or photosensitive dielectric material.

9. the encapsulating structure of tool microcomputer electric component according to claim 1, is characterized in that, the material of this base material is siliceous material.

10. a method for making for the encapsulating structure of tool microcomputer electric component, is characterized in that, comprising:

Preparation one has the base plate for packaging of relative first surface and second surface, the first surface of this base plate for packaging and second surface are formed with respectively the first line layer and the second line layer, and be electrically connected this first line layer and the second line layer by running through the conductive through hole of this base plate for packaging, in this base plate for packaging, be embedded with chip, on this chip, there are multiple electronic padses that expose to this base plate for packaging first surface;

On this first surface and chip, sequentially form the first dielectric layer and be electrically connected this electronic pads and the tertiary circuit layer of the first line layer;

On this first dielectric layer and tertiary circuit layer, form the second dielectric layer;

Remove this second dielectric layer of part runs through this first and second dielectric layer perforation to form recess and formation;

This recess inner edge, with recess periphery second dielectric layer top surface form lid, wherein, cap portion on this second dielectric layer top surface forms lid frame, and form the first electric connection pad on this second dielectric layer, and form the first conductive blind hole that is electrically connected this first line layer and the first electric connection pad in this perforation;

On this first electric connection pad and this lid frame, form then material;

Provide a surface to be provided with the base material of microcomputer electric component and the second electric connection pad; And

With this microcomputer electric component, mode that should recess is engaged to this base material and base plate for packaging.

The method for making of the encapsulating structure of 11. tool microcomputer electric components according to claim 10, is characterized in that, also includes metal frame with this substrate surface of this microcomputer electric component homonymy, and by following corresponding this lid frame that connects of material.

The method for making of the encapsulating structure of 12. tool microcomputer electric components according to claim 10, it is characterized in that, before being also included in and forming then material, on this second dielectric layer and the first electric connection pad, form welding resisting layer, and form multiple correspondences and expose the perforate of this first electric connection pad, and then material is formed in this perforate.

The method for making of the encapsulating structure of 13. tool microcomputer electric components according to claim 10, it is characterized in that, also be included on this base plate for packaging second surface and form layer reinforced structure, this layer reinforced structure comprises at least one the 3rd dielectric layer, is formed at the 4th line layer and multiple the second conductive blind hole that is formed in the 3rd dielectric layer and is electrically connected the 4th line layer and the second line layer on the 3rd dielectric layer, and outermost the 4th line layer of this layer reinforced structure also has multiple solder ball pads.

The method for making of the encapsulating structure of 14. tool microcomputer electric components according to claim 13, is characterized in that, is also included on this layer reinforced structure and forms welding resisting layer, and in this welding resisting layer, form multiple correspondences and expose the respectively welding resisting layer perforate of this solder ball pad.

The method for making of the encapsulating structure of 15. tool microcomputer electric components according to claim 14, is characterized in that, is also included in respectively and forms soldered ball on this solder ball pad.

The method for making of the encapsulating structure of 16. tool microcomputer electric components according to claim 15, is characterized in that, also comprises and cuts single technique, to obtain the encapsulating structure of multiple tool microcomputer electric components.

The method for making of the encapsulating structure of 17. tool microcomputer electric components according to claim 10, is characterized in that, the material of this second dielectric layer is anti-welding material or photosensitive dielectric material.

The method for making of the encapsulating structure of 18. tool microcomputer electric components according to claim 12, is characterized in that, the material of this welding resisting layer is anti-welding material or photosensitive dielectric material.

The method for making of the encapsulating structure of 19. tool microcomputer electric components according to claim 10, is characterized in that, the material of this base material is siliceous material.