CN102394217B - Manufacturing method of metal- silicon nitride-metal capacitor - Google Patents
Manufacturing method of metal- silicon nitride-metal capacitor Download PDFInfo
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- CN102394217B CN102394217B CN2011103928013A CN201110392801A CN102394217B CN 102394217 B CN102394217 B CN 102394217B CN 2011103928013 A CN2011103928013 A CN 2011103928013A CN 201110392801 A CN201110392801 A CN 201110392801A CN 102394217 B CN102394217 B CN 102394217B
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- silicon nitride
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- dielectric layer
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- 239000003990 capacitor Substances 0.000 title claims abstract description 35
- 229910052751 metal Inorganic materials 0.000 title claims abstract description 28
- 239000002184 metal Substances 0.000 title claims abstract description 28
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 20
- 239000010703 silicon Substances 0.000 title claims abstract description 20
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 11
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 48
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 48
- 238000000034 method Methods 0.000 claims abstract description 35
- 239000007789 gas Substances 0.000 claims abstract description 24
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 21
- 239000001301 oxygen Substances 0.000 claims abstract description 21
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 21
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims abstract description 14
- 238000005530 etching Methods 0.000 claims abstract description 5
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 18
- 238000000151 deposition Methods 0.000 claims description 14
- 230000008021 deposition Effects 0.000 claims description 12
- 239000000758 substrate Substances 0.000 claims description 10
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 9
- 229910021529 ammonia Inorganic materials 0.000 claims description 9
- 230000015572 biosynthetic process Effects 0.000 claims description 9
- 229910000077 silane Inorganic materials 0.000 claims description 9
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 claims description 6
- MWUXSHHQAYIFBG-UHFFFAOYSA-N Nitric oxide Chemical compound O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 claims description 6
- GQPLMRYTRLFLPF-UHFFFAOYSA-N Nitrous Oxide Chemical compound [O-][N+]#N GQPLMRYTRLFLPF-UHFFFAOYSA-N 0.000 claims description 6
- 238000001259 photo etching Methods 0.000 claims description 6
- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 claims description 3
- 229910002092 carbon dioxide Inorganic materials 0.000 claims description 3
- 239000001569 carbon dioxide Substances 0.000 claims description 3
- 229910002091 carbon monoxide Inorganic materials 0.000 claims description 3
- 239000001272 nitrous oxide Substances 0.000 claims description 3
- 238000005516 engineering process Methods 0.000 abstract description 3
- 230000015556 catabolic process Effects 0.000 abstract 1
- 239000000463 material Substances 0.000 abstract 1
- 238000000206 photolithography Methods 0.000 abstract 1
- 239000010408 film Substances 0.000 description 10
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 5
- 229910052802 copper Inorganic materials 0.000 description 5
- 239000010949 copper Substances 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- KMWBBMXGHHLDKL-UHFFFAOYSA-N [AlH3].[Si] Chemical compound [AlH3].[Si] KMWBBMXGHHLDKL-UHFFFAOYSA-N 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000000427 thin-film deposition Methods 0.000 description 1
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Abstract
The invention discloses a manufacturing method of a metal-silicon nitride-metal capacitor. Through forming a mixing layer of a low k value medium and high k silicon nitride, photolithography etching of a traditional technology is used to respectively form metal grooves in the low k value medium and the silicon nitride and the metal grooves are filled with metal. A high performance MOM capacitor structure is realized in a high k value material silicon nitride area. Interconnection of the low k medium is realized in other areas. Plasma enhanced chemical vapor deposition (PECVD) and a mode of oxygen containing gas processing cycle operation are used to form the high k silicon nitride and Si-H in the silicon nitride can be effectively removed. Compared to a traditional single k value medium structure, by using the method of the invention, capacitance of the inner layer capacitor can be increased; various kinds of electrical characteristics of the MOM capacitor, such as a breakdown voltage, a leakage current and the like, can be improved; and electrical uniformity between devices can be improved too.
Description
Technical field
The present invention relates to microelectronic, particularly relate to a kind of manufacture method of metal-silicon nitride-metal capacitor.
Background technology
Capacitor is electronic devices and components commonly used in integrated circuit, is also the important composition unit of integrated circuit, and it can be widely used in memory, microwave, and radio frequency, smart card, in the chips such as high pressure and filtering.At present, the capacitor that widely adopts in chip is metal-insulator-metal type (MIM) capacitor that is parallel to silicon chip substrate.Wherein metal usually adopts and metal interconnected the technique copper, aluminium etc. of compatibility mutually, insulator mostly is the dielectric substance silicon nitride of high-k (k), plasma enhanced chemical vapor deposition method (PECVD, Plasma Enhanced Chemical Vapor Deposition) is because of the low thin film deposition that is widely used in metal interconnected technique of its depositing temperature.The interior residual a large amount of si-h bond (Si-H) of the silicon nitride film that utilizes the PECVD method to make, make in it and have more electric charge, this causes the uniformity of this silicon nitride film aspect electrical thickness poor, and the MIM capacitor of utilizing this silicon nitride film to make also can be corresponding poor aspect each electrical characteristics such as puncture voltage, leakage current.
In addition, along with improving constantly of very lagre scale integrated circuit (VLSIC) integrated level, the continuous scaled down of device feature size, the capacitor sizes of making in circuit is corresponding dwindling also, and to the uniformity that electric capacity is made, coherence request is more strict.And along with the minimizing of device size, and performance is to the demand of large electric capacity, and how obtaining highdensity electric capacity under limited area also becomes an attractive problem.
Publication number is that the Chinese patent of CN101577227A discloses a kind of method of improving aluminium-silicon nitride-tantalum compound capacitor performance, process silicon nitride film by oxygen-containing gas, the quantity of electric charge in the silicon nitride film that forms is less, the electrical thickness of silicon nitride film and the uniformity of physical thickness have been improved, adopt the MIM electric capacity of the method formation in puncture voltage, each electrical characteristics aspect such as leakage current makes moderate progress, but does not obtain highdensity electric capacity.Therefore, how to obtain highdensity electric capacity under limited area and be still urgent problem in present technical development.
Summary of the invention
Technical problem to be solved by this invention is to provide a kind of formation method of metal-silicon nitride-metal capacitor, to obtain highdensity electric capacity under limited area, and can effectively improve the electric capacity of layer inner capacitor, improve each electrical characteristics such as puncture voltage, leakage current of metal-silicon nitride-metal (MOM) capacitor and the electricity uniformity between each device thereof.
For addressing the above problem, the invention provides a kind of manufacture method of metal-silicon nitride-metal capacitor, said method comprising the steps of:
Substrate is provided;
The low k value dielectric layer of deposition on substrate;
Process two modes that go on foot circulation by plasma enhanced chemical vapor deposition and oxygen-containing gas and form silicon nitride on low k value dielectric layer;
Remove by photoetching and etching a part of silicon nitride that hangs down on k value dielectric layer, the silicon nitride that keeps is used for follow-up formation metal-silicon nitride-metal capacitor;
At the low k value dielectric layer of said structure surface deposition;
Utilize cmp to remove the unnecessary low k value dielectric layer of silicon nitride surface top;
By photoetching be etched in low k value dielectric layer and silicon nitride and form respectively metallic channel;
Fill metal in metallic channel.
Better, the reacting gas that described plasma enhanced chemical vapor deposition adopts comprises silane and ammonia.
Better, the flow of described silane is between 500sccm to 600sccm, the flow of described ammonia is between 9000sccm to 15000sccm, and the flow-rate ratio of silane and ammonia is between 1: 15 to 1: 30, and rate of film build is between 1500 nm/minute to 5000 nm/minute.
Better, described oxygen-containing gas is processed the oxygen-containing gas that adopts and is comprised nitric oxide, nitrous oxide, carbon monoxide or carbon dioxide.
Better, the oxygen-containing gas flow that described oxygen-containing gas processing is adopted is between 2000sccm to 6000sccm, and treatment temperature is between 300 degrees centigrade to 600 degrees centigrade.
Better, described modes by plasma enhanced chemical vapor deposition and oxygen-containing gas processing two steps circulation form in the process of silicon nitride, and the silicon nitride thickness of each deposition is 1 nanometer to 10 nanometer.
The present invention hangs down the mixed layer of k value medium and high k value silicon nitride by formation, then carry out the photoetching etching of traditional handicraft, in high k value silicon nitride region, realizes the MOM structure, realizes low k value interconnection in other zones; Well improve the electric capacity in the capacitor unit are, improved capacitor density, also further improved the performance of MOM capacitor, thereby met the requirement of constantly microminiaturized chip to high performance capacitors.
Description of drawings
Fig. 1 is the method flow diagram that the embodiment of the present invention forms MOM electric capacity;
Fig. 2 A～2F is the method schematic diagram that the embodiment of the present invention forms MOM electric capacity.
Embodiment
, for above-mentioned purpose of the present invention, feature and advantage can be become apparent more, below in conjunction with accompanying drawing, the specific embodiment of the present invention is described in detail.
The present invention proposes the process of a kind of making metal-silicon nitride-metal (MOM) capacitor.Please refer to Fig. 1, prepare the flow chart of MOM capacitor formation method for the present invention.
Step 201: substrate 1 is provided; The substrate 1 that provides in the present embodiment can be simple silicon substrate, also can form for surface the silicon substrate of semiconductor device.
Step 202: as shown in Figure 2 A, the low k value dielectric layer 2 of deposition on substrate 1.Described low k value dielectric layer 2 adopts chemical vapor deposition or spin coating process to form, and dielectric constant is 2～3.
Step 203: as shown in Fig. 2 B, the silicon nitride 3 of the high k value of deposition on low k value dielectric layer 2.In order to improve silicon nitride 3 films that conventional P ECVD method makes in the uniformity aspect electrical thickness, the mode that adopts PECVD method deposited silicon nitride and oxygen-containing gas cycle for the treatment of to carry out in the present invention, after namely depositing one deck silicon nitride 3, carrying out subsequently oxygen-containing gas processes, and then deposited silicon nitride 3, carry out again oxygen-containing gas and process, so circulation; The silicon nitride thickness of each deposition is 1 nanometer to 10 nanometer, till the silicon nitride of deposition reaches the thickness that needs in technique.Wherein, the reacting gas that PECVD adopts is silane and ammonia, the process conditions of reaction are that the flow of silane is between 500sccm to 600sccm, the flow of ammonia is between 9000sccm to 15000sccm, the flow-rate ratio of silane and ammonia is between 1: 15 to 1: 30, and rate of film build is between 1500 nm/minute to 5000 nm/minute; Oxygen-containing gas is processed the oxygen-containing gas that adopts and is comprised nitric oxide, nitrous oxide, carbon monoxide or carbon dioxide, and the flow of oxygen-containing gas is between 2000 to 6000sccm, and treatment temperature is between 300 to 600 degrees centigrade.And then silicon nitride by the deposition skim also carries out the oxygen-containing gas processing to it, can remove fully the si-h bond Si-H in silicon nitride film, and so circulation, can obtain the good silicon nitride of electrical thickness evenness.
Step 204: as shown in Figure 2 C, by photoetching and etching, remove a part of silicon nitride that hangs down on k value dielectric layer, the silicon nitride that keeps is used for follow-up formation metal-silicon nitride-metal capacitor.
Step 205: as shown in Fig. 2 D, again deposit low k value dielectric layer 2 on the said structure surface.
Step 206: utilize cmp to remove the unnecessary low k value medium 2 in silicon nitride 3 surfaces, form the mixed layer of low k value medium and silicon nitride.
Step 207: as shown in Figure 2 E, form respectively metallic channel 4a, 4b in low k value dielectric layer 2 and silicon nitride 3, wherein, the metallic channel 4a in low k value dielectric layer 2 is used to form interconnection, and the metallic channel 4b in silicon nitride 3 is used for follow-up formation capacitor plate.Metallic channel 4b in silicon nitride 3 can evenly offer a plurality of, and the degree of depth of metallic channel 4b equals the degree of depth of silicon nitride 3, and namely the bottom-exposed of metallic channel 4b goes out to hang down k value dielectric layer 2.
Step 208: as shown in Figure 2 F, fill metal 5 in metallic channel, namely carry out the processing steps such as diffusion impervious layer deposition, copper plating, copper metal layer cmp of the copper of copper wiring technique in the metallic channel in low k value medium 2 and silicon nitride 3, complete the making of copper-connection and MOM capacitor.
The present invention is when utilizing schematic diagram that the embodiment of the present invention is described in detail in detail, and for convenience of explanation, the profile of expression device architecture is disobeyed general ratio and done local the amplification, should not use this as limitation of the invention.In addition, those skilled in the art can carry out various changes and modification and not break away from the spirit and scope of the present invention the present invention.Like this, if within of the present invention these are revised and modification belongs to the scope of the claims in the present invention and equivalent technologies thereof, the present invention also is intended to comprise these changes and modification interior.
Claims (6)
1. the manufacture method of a metal-silicon nitride-metal capacitor, is characterized in that, comprises step:
Substrate is provided;
The low k value dielectric layer of deposition on substrate;
Process two modes that go on foot circulation by plasma enhanced chemical vapor deposition and oxygen-containing gas and form silicon nitride on low k value dielectric layer;
Remove by photoetching and etching a part of silicon nitride that hangs down on k value dielectric layer, the silicon nitride that keeps is used for follow-up formation metal-silicon nitride-metal capacitor;
At the low k value dielectric layer of said structure surface deposition;
Utilize cmp to remove the unnecessary low k value dielectric layer of silicon nitride surface top;
By photoetching be etched in low k value dielectric layer and silicon nitride and form respectively metallic channel, the metallic channel in low k value dielectric layer is used to form interconnection, and a plurality of metallic channels in silicon nitride are for follow-up formation capacitor plate;
Fill metal in metallic channel.
2. the manufacture method of metal-silicon nitride-metal capacitor as claimed in claim 1, is characterized in that, the reacting gas that described plasma enhanced chemical vapor deposition adopts comprises silane and ammonia.
3. the manufacture method of metal-silicon nitride-metal capacitor as claimed in claim 2, it is characterized in that, the flow of described silane is between 500sccm to 600sccm, the flow of described ammonia is between 9000sccm to 15000sccm, the flow-rate ratio of silane and ammonia is 1:15 to 1:30, and rate of film build is between 1500 nm/minute to 5000 nm/minute.
4. the manufacture method of metal-silicon nitride-metal capacitor as claimed in claim 1, is characterized in that, described oxygen-containing gas is processed the oxygen-containing gas that adopts and comprised nitric oxide, nitrous oxide, carbon monoxide or carbon dioxide.
5. the manufacture method of metal-silicon nitride-metal capacitor as claimed in claim 1, is characterized in that, the oxygen-containing gas flow that described oxygen-containing gas processing is adopted is between 2000sccm to 6000sccm, and treatment temperature is between 300 degrees centigrade to 600 degrees centigrade.
6. the manufacture method of metal-silicon nitride-metal capacitor as claimed in claim 1, it is characterized in that, described modes by plasma enhanced chemical vapor deposition and oxygen-containing gas processing two steps circulation form in the process of silicon nitride, and the silicon nitride thickness of each deposition is 1 nanometer to 10 nanometer.
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| CN2011103928013A CN102394217B (en) | 2011-11-30 | 2011-11-30 | Manufacturing method of metal- silicon nitride-metal capacitor |
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| CN2011103928013A CN102394217B (en) | 2011-11-30 | 2011-11-30 | Manufacturing method of metal- silicon nitride-metal capacitor |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN102856161A (en) * | 2012-04-17 | 2013-01-02 | 上海华力微电子有限公司 | Production method for metal-oxide-metal capacitor (MOM) |
| CN102709154A (en) * | 2012-04-17 | 2012-10-03 | 上海华力微电子有限公司 | Manufacture method of metal-multilayer insulator-metal capacitor |
| CN102637599A (en) * | 2012-04-20 | 2012-08-15 | 上海华力微电子有限公司 | Manufacturing method of multilayer metal-multilayer insulator-metal capacitor |
| CN103066015A (en) * | 2012-12-14 | 2013-04-24 | 上海集成电路研发中心有限公司 | Manufacture method of metal interlamination capacitor |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101160663A (en) * | 2003-09-23 | 2008-04-09 | 飞思卡尔半导体公司 | Semiconductor device and manufacturing method thereof |
| CN101577227A (en) * | 2008-05-05 | 2009-11-11 | 中芯国际集成电路制造(北京)有限公司 | Forming methods of silicon nitride film and MIM capacitor |
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Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101160663A (en) * | 2003-09-23 | 2008-04-09 | 飞思卡尔半导体公司 | Semiconductor device and manufacturing method thereof |
| CN101577227A (en) * | 2008-05-05 | 2009-11-11 | 中芯国际集成电路制造(北京)有限公司 | Forming methods of silicon nitride film and MIM capacitor |
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