CN102376841A - Light emitting diode structure and manufacturing method thereof - Google Patents
Light emitting diode structure and manufacturing method thereof Download PDFInfo
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- CN102376841A CN102376841A CN2011103789932A CN201110378993A CN102376841A CN 102376841 A CN102376841 A CN 102376841A CN 2011103789932 A CN2011103789932 A CN 2011103789932A CN 201110378993 A CN201110378993 A CN 201110378993A CN 102376841 A CN102376841 A CN 102376841A
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- 238000004519 manufacturing process Methods 0.000 title abstract description 19
- 238000000034 method Methods 0.000 claims abstract description 47
- 230000003647 oxidation Effects 0.000 claims abstract description 17
- 238000007254 oxidation reaction Methods 0.000 claims abstract description 17
- 239000004065 semiconductor Substances 0.000 claims description 67
- 239000000463 material Substances 0.000 claims description 45
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 14
- 229910052733 gallium Inorganic materials 0.000 claims description 14
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 claims description 7
- 230000001590 oxidative effect Effects 0.000 claims description 7
- 238000009279 wet oxidation reaction Methods 0.000 claims description 6
- 150000001875 compounds Chemical class 0.000 claims description 5
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 claims description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
- 229910052717 sulfur Inorganic materials 0.000 claims description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims 2
- 229910052698 phosphorus Inorganic materials 0.000 claims 2
- 239000011574 phosphorus Substances 0.000 claims 2
- 239000011593 sulfur Substances 0.000 claims 2
- 239000000758 substrate Substances 0.000 abstract description 30
- 230000003064 anti-oxidating effect Effects 0.000 abstract description 8
- 239000010410 layer Substances 0.000 description 124
- 230000004888 barrier function Effects 0.000 description 50
- 238000010276 construction Methods 0.000 description 27
- 239000012774 insulation material Substances 0.000 description 17
- 230000008569 process Effects 0.000 description 15
- 238000005516 engineering process Methods 0.000 description 14
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 8
- 238000005240 physical vapour deposition Methods 0.000 description 8
- 239000011241 protective layer Substances 0.000 description 7
- 238000005229 chemical vapour deposition Methods 0.000 description 6
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 5
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
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- 238000010894 electron beam technology Methods 0.000 description 4
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- 235000012239 silicon dioxide Nutrition 0.000 description 4
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- 239000007787 solid Substances 0.000 description 4
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 3
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- 238000002360 preparation method Methods 0.000 description 3
- 229910002601 GaN Inorganic materials 0.000 description 2
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- FTWRSWRBSVXQPI-UHFFFAOYSA-N alumanylidynearsane;gallanylidynearsane Chemical compound [As]#[Al].[As]#[Ga] FTWRSWRBSVXQPI-UHFFFAOYSA-N 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- HZXMRANICFIONG-UHFFFAOYSA-N gallium phosphide Chemical compound [Ga]#P HZXMRANICFIONG-UHFFFAOYSA-N 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 1
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 1
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- 238000012536 packaging technology Methods 0.000 description 1
- NHDHVHZZCFYRSB-UHFFFAOYSA-N pyriproxyfen Chemical compound C=1C=CC=NC=1OC(C)COC(C=C1)=CC=C1OC1=CC=CC=C1 NHDHVHZZCFYRSB-UHFFFAOYSA-N 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
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Abstract
A method of fabricating a light emitting diode structure is as follows. First, a carrier substrate and an led chip disposed thereon are provided. The light emitting diode chip has a bottom surface facing the carrier substrate, at least one top surface opposite to the bottom surface, and at least one sidewall connected to the top surface, and the light emitting diode chip has an electrode disposed on the top surface. Then, an anti-oxidation layer is formed on the top surface of the light emitting diode chip. Then, an oxidation method is performed to form an insulating layer on the sidewall of the LED chip. And finally, removing the oxidation resistant layer.
Description
This case is an original applying number: 200810186083.2, and the applying date is: 2008.12.22 divides an application.
Technical field
The invention relates to a kind of light emitting diode construction and preparation method thereof, and particularly relevant for being coated with light emitting diode construction of insulating barrier and preparation method thereof on a kind of sidewall.
Background technology
The packaging technology of light-emitting diode generally is to comprise that extension, processing cut into technologies such as a plurality of light-emitting diode chip for backlight unit, solid crystalline substance, routing joint.Yet, in the process of cutting, on the sidewall of these light-emitting diode chip for backlight unit, produce defective easily.In case the sidewall of light-emitting diode chip for backlight unit has defective, then be prone to have the problem of leakage current to produce, so that light-emitting diode chip for backlight unit stability electrically is not good.In addition, the sidewall of light-emitting diode chip for backlight unit is exposed in the external environment, receives external environment or the pollution of subsequent technique or damage easily, so that the technology yield reduces.
In addition; In solid brilliant process; In order to the elargol of the fixing light-emitting diode chip for backlight unit sidewall of overflow to light-emitting diode chip for backlight unit because the control of glue amount is improper easily, so that electrical short circuit between the p type doping semiconductor layer of light-emitting diode chip for backlight unit and the n type doping semiconductor layer.Aforesaid electrical short circuit meeting causes shortcomings such as the brightness decay of light-emitting diode chip for backlight unit, contrary bias current increase, the reduction of technology yield and cost of manufacture raising.
Summary of the invention
The present invention proposes a kind of light emitting diode construction, can avoid the elargol on the sidewall of overflow to light-emitting diode chip for backlight unit to make electrically short circuit between p type doping semiconductor layer and the n type doping semiconductor layer.
The present invention proposes a kind of manufacture method of light emitting diode construction in addition, and its technology yield is higher and cost of manufacture is lower.
The manufacture method that the present invention proposes a kind of light emitting diode construction is described below.At first, a light-emitting diode chip for backlight unit and a bearing substrate are provided.Light-emitting diode chip for backlight unit is disposed on the bearing substrate; Light-emitting diode chip for backlight unit has towards a bottom surface of bearing substrate, with respect at least one end face of bottom surface and at least one sidewall of linking to each other with end face, and light-emitting diode chip for backlight unit has at least one electrode that is disposed on the end face.Then, on bearing substrate, form a continuity oxidation-resistant material layer.Then, remove partial continuous property oxidation-resistant material layer,, be disposed at the electrode on the end face with covering, and expose sidewall with in forming an anti oxidation layer on the end face of light-emitting diode chip for backlight unit and on the part bearing substrate.Then, implement an oxidizing process, on the sidewall of light-emitting diode chip for backlight unit, to form an insulating barrier.Afterwards, remove anti oxidation layer.
In one embodiment of this invention, light-emitting diode chip for backlight unit comprises one first type doping semiconductor layer, one second type doping semiconductor layer and a luminescent layer, and wherein luminescent layer is between the first type doping semiconductor layer and the second type doping semiconductor layer.
In one embodiment of this invention, the material of insulating barrier comprises the oxide of the first type doping semiconductor layer, the oxide of luminescent layer and the oxide of the second type doping semiconductor layer.
In one embodiment of this invention, the material of insulating barrier comprises the oxide that contains gallium and nitrogenous oxide.
In one embodiment of this invention, the material of insulating barrier comprises the oxide that contains gallium and phosphorous oxide.
The manufacture method that the present invention proposes a kind of light emitting diode construction is described below.At first, a light-emitting diode chip for backlight unit and a bearing substrate are provided.Light-emitting diode chip for backlight unit is disposed on the bearing substrate; Light-emitting diode chip for backlight unit has towards a bottom surface of bearing substrate, with respect at least one end face of bottom surface and at least one sidewall of linking to each other with end face, and light-emitting diode chip for backlight unit has at least one electrode that is disposed on the end face.Then, on bearing substrate, form a continuity layer of cover material.Then, remove partial continuous property layer of cover material, to form a cover layer on the part bearing substrate, with coated electrode in reaching on the end face.Then, on bearing substrate, form a continuity insulation material layer, and covering luminousing diode chip.Afterwards, remove the supratectal part that is positioned at of cover layer and continuity insulation material layer, on the sidewall of light-emitting diode chip for backlight unit, to form an insulating barrier.
In one embodiment of this invention, the method for formation continuity insulation material layer comprises physical vapour deposition (PVD), chemical vapour deposition (CVD), sputter or electron beam growth.
In one embodiment of this invention, the material of insulating barrier comprises siliceous oxide.
In one embodiment of this invention, light-emitting diode chip for backlight unit comprises one first type doping semiconductor layer, one second type doping semiconductor layer and a luminescent layer, and wherein luminescent layer is between the first type doping semiconductor layer and the second type doping semiconductor layer.
The manufacture method that the present invention proposes a kind of light emitting diode construction is described below.At first, a light-emitting diode chip for backlight unit and a bearing substrate are provided.Light-emitting diode chip for backlight unit is disposed on the bearing substrate; Light-emitting diode chip for backlight unit has towards a bottom surface of bearing substrate, with respect at least one end face of bottom surface and at least one sidewall of linking to each other with end face, and light-emitting diode chip for backlight unit has at least one electrode that is disposed on the end face.Then, form a continuity insulation material layer on the bearing substrate, with covering luminousing diode chip.Then, on sidewall, form a protective layer, and the continuity insulation material layer is between protective layer and sidewall.Afterwards, remove the part that protected seam did not cover of continuity insulation material layer, on the sidewall of light-emitting diode chip for backlight unit, to form an insulating barrier.Then, remove protective layer.
In one embodiment of this invention, the method for formation continuity insulation material layer comprises rotary coating.
In one embodiment of this invention, the material of continuity insulation material layer comprises the oxide sol that contains silicon dioxide.
In one embodiment of this invention, light-emitting diode chip for backlight unit comprises one first type doping semiconductor layer, one second type doping semiconductor layer and a luminescent layer, and wherein luminescent layer is between the first type doping semiconductor layer and the second type doping semiconductor layer.
The present invention proposes a kind of light emitting diode construction and comprises a light-emitting diode chip for backlight unit and an insulating barrier.Light-emitting diode chip for backlight unit has a bottom surface, with respect at least one end face of bottom surface and at least one sidewall of linking to each other with end face, and light-emitting diode chip for backlight unit has an electrode that is disposed on the end face.Insulating barrier is disposed on the sidewall, and exposes electrode.
In one embodiment of this invention, insulating layer exposing goes out end face.
In one embodiment of this invention, light-emitting diode chip for backlight unit comprises one first type doping semiconductor layer, one second type doping semiconductor layer and a luminescent layer, and wherein luminescent layer is between the first type doping semiconductor layer and the second type doping semiconductor layer.
In one embodiment of this invention, the material of insulating barrier comprises the oxide of the first type doping semiconductor layer, the oxide of luminescent layer and the oxide of the second type doping semiconductor layer.
In one embodiment of this invention, the material of insulating barrier comprises the oxide that contains gallium and nitrogenous oxide or comprises the oxide that contains gallium and phosphorous oxide.
In one embodiment of this invention, the material of insulating barrier comprises siliceous oxide or sulphur and compound thereof.
In one embodiment of this invention, insulating barrier comprises physical vapour deposition (PVD) layer, chemical vapor deposition layer, sputtered layer or electron beam growth layer.
The present invention proposes a kind of light emitting diode construction, comprising: a light-emitting diode chip for backlight unit has a bottom surface, with respect at least one end face of this bottom surface and at least one sidewall that links to each other with this end face, and has an electrode that is disposed on this end face; An and insulating barrier; Be disposed on this sidewall; And expose this electrode, and wherein this insulating barrier is to utilize an oxidizing process that the material of this light-emitting diode chip for backlight unit sidewall is carried out oxidation to form, wherein this insulating layer exposing goes out this end face; Wherein this light-emitting diode chip for backlight unit comprises one first type doping semiconductor layer, one second type doping semiconductor layer and a luminescent layer, and wherein this luminescent layer is between this first type doping semiconductor layer and this second type doping semiconductor layer.
Wherein the material of this insulating barrier comprises the oxide of the first type doping semiconductor layer, the oxide of luminescent layer and the oxide of the second type doping semiconductor layer; Perhaps the material of this insulating barrier comprises the oxide that contains gallium and nitrogenous oxide or comprises the oxide that contains gallium and phosphorous oxide, and perhaps the material of this insulating barrier comprises siliceous oxide or sulphur and compound thereof.
Wherein this oxidizing process comprises dry type oxidation process or wet oxidation process.
In sum, the present invention forms an insulating barrier on the sidewall of light-emitting diode chip for backlight unit, to avoid causing electrical problem of short-circuit between p type doping semiconductor layer and the n type doping semiconductor layer because of elargol overflow to sidewall in the known technology.Thus, insulating barrier can promote the technology yield and reduce cost of manufacture.
Description of drawings
For letting above-mentioned and further feature of the present invention and the advantage can be more obviously understandable, the special act of hereinafter embodiment, and conjunction with figs. elaborate as follows, wherein:
Figure 1A～Fig. 1 D illustrates the profile of manufacture method of the light emitting diode construction of one embodiment of the invention.
Fig. 2 A～Fig. 2 D illustrates the profile of manufacture method of the light emitting diode construction of another embodiment of the present invention.
Fig. 3 A～Fig. 3 C illustrates the profile of manufacture method of the light emitting diode construction of further embodiment of this invention.
Fig. 4 illustrates the profile of the light emitting diode construction of one embodiment of the invention.
Fig. 5 illustrates the profile of the light emitting diode construction of another embodiment of the present invention.
Embodiment
Figure 1A～Fig. 1 D illustrates the profile of manufacture method of the light emitting diode construction of one embodiment of the invention.
At first, please with reference to Figure 1A, a light-emitting diode chip for backlight unit 100 and a bearing substrate 200 are provided, light-emitting diode chip for backlight unit 100 is disposed on the bearing substrate 200.Bearing substrate 100 for example is blue film (blue tape) or ultraviolet tape (UV tape).
Light-emitting diode chip for backlight unit 100 has towards a bottom surface B of bearing substrate 200, two end face U1, the U2 with respect to bottom surface B and a plurality of sidewall S that link to each other with end face U1, U2, and light-emitting diode chip for backlight unit 100 has and is disposed at end face U1, last a plurality of electrode E1, the E2 of U2.
In the present embodiment, light-emitting diode chip for backlight unit 100 can comprise one first type doping semiconductor layer 112, one second type doping semiconductor layer 114 and the luminescent layer 116 between the first type doping semiconductor layer 112 and the second type doping semiconductor layer 114.In addition, light-emitting diode chip for backlight unit 100 also can comprise an epitaxial loayer 120, and epitaxial loayer 120 is between light-emitting diode chip for backlight unit 100 and bearing substrate 200.
Then, please once more with reference to Figure 1A, in the present embodiment, on light-emitting diode chip for backlight unit 100, form a continuity oxidation-resistant material layer A1, its material for example is photosensitive materials such as photoresistance comprehensively.Then,, in the present embodiment, can the exposure imaging method remove the continuity oxidation-resistant material layer A1 that is positioned on the sidewall S, on end face U1, U2 and the part bearing substrate 200 of light-emitting diode chip for backlight unit 100, to form an anti oxidation layer A please with reference to Figure 1B.Anti oxidation layer A covers and is disposed at end face U1, last electrode E1, the E2 of U2, and exposes sidewall S.
Afterwards, please with reference to Fig. 1 C, implement an oxidizing process, go up with the sidewall S in light-emitting diode chip for backlight unit 100 and form an insulating barrier I, oxidizing process for example is dry type oxidation process (dry oxidation) or wet oxidation process (wet oxidation).The mode of implementing wet oxidation process for example is that light-emitting diode chip for backlight unit 100 is exposed in the environment that contains aqueous vapor, and the mode of execution dry type oxidation process for example is that light-emitting diode chip for backlight unit 100 is exposed in the environment that contains oxygen.In addition, in the present embodiment,, therefore, on the sidewall 122 of epitaxial loayer 120, also can form insulating barrier I because epitaxial loayer 120 also can be oxidized.
The material of insulating barrier I can comprise the oxide of the first type doping semiconductor layer 112, the oxide of luminescent layer 116, the oxide of the second type doping semiconductor layer 114 and the oxide of epitaxial loayer 120.In the present embodiment, the material of insulating barrier I comprises the oxide that contains gallium and nitrogenous oxide.Execute in the example at other, the material of insulating barrier I comprises the oxide that contains gallium and phosphorous oxide.
It should be noted that present embodiment upward forms insulating barrier I in the sidewall S of light-emitting diode chip for backlight unit 100, and insulating barrier I can fill up the defective on the sidewall S and make sidewall S passivation.Thus, insulating barrier I can reduce the probability of leakage current generating, and promotes light-emitting diode chip for backlight unit 100 stability electrically.In addition, avoid receiving external environment or the pollution of subsequent technique or damage but insulating barrier I covers sidewall S protective side wall S, and then promote the technology yield.
Moreover, in follow-up solid brilliant process, because the sidewall S of insulating barrier I covering luminousing diode chip 100, so can avoid causing electrical problem of short-circuit between p type doping semiconductor layer and the n type doping semiconductor layer because of elargol overflow to sidewall in the known technology.Thus, going up formation insulating barrier I in sidewall S can promote the technology yield and reduce cost of manufacture.
Afterwards,, remove anti oxidation layer A, to expose electrode E1, E2 please with reference to Fig. 1 D.In the present embodiment, when anti oxidation layer A was photosensitive material, the method that removes anti oxidation layer A can be an exposure imaging.
Fig. 2 A～Fig. 2 D illustrates the profile of manufacture method of the light emitting diode construction of another embodiment of the present invention.
At first, please with reference to Fig. 2 A, a light-emitting diode chip for backlight unit 100 and a bearing substrate 200 are provided, light-emitting diode chip for backlight unit 100 is disposed on the bearing substrate 200.
Then, please once more with reference to Fig. 2 A, in the present embodiment, can on light-emitting diode chip for backlight unit 100, form a continuity layer of cover material C1 comprehensively.Then,, can remove the continuity layer of cover material C1 that is positioned on the sidewall S by the exposure imaging method please with reference to Fig. 2 B, exposing sidewall S, and in end face U1, the last residual remaining cover layer C of U2, cover layer C coated electrode E1, E2.
Then,, on bearing substrate 200, form a continuity insulation material layer I1 please with reference to Fig. 2 C, and covering luminousing diode chip 100.The method that forms continuity insulation material layer I1 for example is physical vapour deposition (PVD), chemical vapour deposition (CVD), sputter, electron beam growth, or other method that is fit to.Afterwards,, remove cover layer C and be positioned at the continuity insulation material layer I1 on the cover layer C, go up with sidewall S and form an insulating barrier I, and expose electrode E1, E2 in light-emitting diode chip for backlight unit 100 please with reference to Fig. 2 D.The material of insulating barrier I for example is siliceous oxide (like silicon dioxide).
Fig. 3 A～Fig. 3 C illustrates the profile of manufacture method of the light emitting diode construction of further embodiment of this invention.
At first, please with reference to Fig. 3 A, a light-emitting diode chip for backlight unit 100 and a bearing substrate 200 are provided, light-emitting diode chip for backlight unit 100 is disposed on the bearing substrate 200.Then, on bearing substrate 200, form a continuity insulation material layer I1, and covering luminousing diode chip 100, and the method for formation continuity insulation material layer I1 for example is rotary coating or other coating method that is fit to.In the present embodiment, the material of continuity insulation material layer I1 for example is an oxide sol, and oxide sol comprises the colloidal sol that contains silicon dioxide or contains the colloidal sol of other oxide that is fit to.
Then, please with reference to Fig. 3 B, on sidewall, form a protective layer 310, and continuity insulation material layer I1 is between protective layer 310 and sidewall S.In the present embodiment, the method that forms protective layer 310 can be on light-emitting diode chip for backlight unit 100, to form a protective material layer (not illustrating) earlier comprehensively, then, removes with the exposure imaging method and to be positioned at end face U1, the last protective material layer of U2.
Afterwards,, remove on chip 100 end faces continuity insulation material layer I1 that protected seam 310 not covered and the protective layer 310 on the sidewall S, go up with sidewall S and form an insulating barrier I in light-emitting diode chip for backlight unit 100 please with reference to Fig. 3 C.The method that removes continuity insulation material layer I1 comprises etching.
It should be noted that above-mentioned three kinds of manufacture methods are that light emitting diode construction with plane formula is that example is done explanation, also can be applied in identical manufacture method on the rectilinear light emitting diode construction and have the knack of art technology person.With the next light emitting diode construction that will introduce one embodiment of the invention in detail.
Fig. 4 illustrates the profile of the light emitting diode construction of one embodiment of the invention.Please with reference to Fig. 4, the light emitting diode construction 400 of present embodiment comprises a light-emitting diode chip for backlight unit 100 and an insulating barrier I.Light-emitting diode chip for backlight unit 100 is the light-emitting diode chip for backlight unit of a plane formula; A plurality of sidewall S that it has a bottom surface B, two end face U1 with respect to bottom surface B, U2 and links to each other with end face U1, U2, light-emitting diode chip for backlight unit 100 have and are disposed at end face U1, last a plurality of electrode E1, the E2 of U2.
In the present embodiment, light-emitting diode chip for backlight unit 100 comprises one first type doping semiconductor layer 112, one second type doping semiconductor layer 114 and the luminescent layer 116 between the first type doping semiconductor layer 112 and the second type doping semiconductor layer 114.The material of the first type doping semiconductor layer 112, the second type doping semiconductor layer 114 and luminescent layer 116 comprises GaAs (GaAs), gallium phosphide (GaP), gallium nitride III-V group iii v compound semiconductor materials such as (GaN).The first type doping semiconductor layer 112 and the second type doping semiconductor layer 114 can be respectively n type doping semiconductor layer and p type doping semiconductor layer.
In addition, light-emitting diode chip for backlight unit 100 also can comprise an epitaxial loayer 120, and epitaxial loayer 120 is between light-emitting diode chip for backlight unit 100 and bearing substrate 200.The material of epitaxial loayer 120 for example is silicon (Si), glass (Glass), GaAs (GaAs), gallium nitride (GaN), aluminum gallium arsenide (AlGaAs), gallium phosphide (GaP), carborundum (SiC), indium phosphide (InP), boron nitride (BN), aluminium oxide (Al
2O
3) or aluminium nitride (AlN).
Insulating barrier I is disposed on the sidewall S, and exposes electrode E1, E2 and end face U1, U2.In the present embodiment, insulating barrier I also covers on the sidewall 122 of epitaxial loayer 120.In the present embodiment, the material of insulating barrier I can comprise the oxide of the first type doping semiconductor layer 112, the oxide of luminescent layer 116 and the oxide of the second type doping semiconductor layer 114.In the present embodiment, the material of insulating barrier I can comprise the oxide that contains gallium and nitrogenous oxide.In addition, the material of insulating barrier I can comprise the oxide that contains gallium and phosphorous oxide.The material of insulating barrier comprises siliceous oxide (like silicon dioxide).In addition, in other embodiments, insulating barrier I for example is physical vapour deposition (PVD) layer, chemical vapor deposition layer, sputtered layer or electron beam growth layer.
Fig. 5 illustrates the profile of the light emitting diode construction of another embodiment of the present invention.Please with reference to Fig. 5, the light emitting diode construction 500 of present embodiment comprises a light-emitting diode chip for backlight unit 510 and an insulating barrier I.Light emitting diode construction 500 that it should be noted that present embodiment is similar with the light emitting diode construction 400 of Fig. 4, and both difference parts only are that the light-emitting diode chip for backlight unit 510 of present embodiment is a rectilinear light-emitting diode chip for backlight unit.In addition, light-emitting diode chip for backlight unit 510 also comprises a conductive layer 512, and it is between light-emitting diode chip for backlight unit 510 and electrode E2, and insulating barrier I also covers the sidewall 512a of conductive layer 512.
In sum, the present invention forms insulating barrier on the sidewall of light-emitting diode chip for backlight unit, to fill up the defective on the sidewall and to make side wall passivation.Thus, insulating barrier can reduce the probability of leakage current generating, and promotes light-emitting diode chip for backlight unit stability electrically.In addition, avoid receiving external environment or the pollution of subsequent technique or damage but insulating barrier covers the sidewall protective side wall, and then promote the technology yield.
Moreover, in follow-up solid brilliant process, because the sidewall of insulating barrier covering luminousing diode chip, so can avoid causing electrical problem of short-circuit between p type doping semiconductor layer and the n type doping semiconductor layer because of elargol overflow to sidewall in the known technology.Thus, insulating barrier can promote the technology yield and reduce cost of manufacture.
Though the present invention discloses as above with embodiment; Right its is not in order to limit the present invention; Has common knowledge the knowledgeable in the field under any; Do not breaking away from the spirit and scope of the present invention, when can doing a little change and retouching, so protection scope of the present invention is when looking being as the criterion that the claim scope defined.
Claims (10)
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