CN101752475B - Light emitting diode structure and manufacturing method thereof - Google Patents

Abstract

A method for manufacturing a light-emitting diode structure is described as follows. First, a carrier substrate and a light-emitting diode chip disposed thereon are provided. The light-emitting diode chip has a bottom surface facing the carrier substrate, at least one top surface opposite to the bottom surface, and at least one side wall connected to the top surface, and the light-emitting diode chip has an electrode disposed on the top surface. Next, an anti-oxidation layer is formed on the top surface of the light-emitting diode chip. Then, an oxidation method is performed to form an insulating layer on the side wall of the light-emitting diode chip. Afterwards, the anti-oxidation layer is removed.

Description

Light emitting diode structure and manufacturing method thereof

technical field

The present invention relates to a structure of a light emitting diode and a manufacturing method thereof, and in particular to a structure of a light emitting diode whose sidewall is covered with an insulating layer and a manufacturing method thereof.

Background technique

The packaging process of light-emitting diodes generally includes processes such as epitaxy, processing and cutting into multiple light-emitting diode chips, die bonding, and wire bonding. However, during the cutting process, defects are easily generated on the sidewalls of these LED chips. Once the sidewall of the LED chip has defects, the problem of leakage current is likely to occur, so that the electrical stability of the LED chip is not good. In addition, the sidewall of the LED chip is exposed to the external environment, which is easily polluted or damaged by the external environment or subsequent processes, so that the process yield is reduced.

In addition, during the die-bonding process, the silver glue used to fix the LED chip is likely to overflow to the sidewall of the LED chip due to improper control of the amount of glue, so that the p-type doped semiconductor layer of the LED chip and the n-type Doped semiconductor layers are electrically shorted. The aforesaid electrical short circuit will cause disadvantages such as attenuation of brightness of the light emitting diode chip, increase of reverse bias current, decrease of process yield, and increase of manufacturing cost.

Contents of the invention

The present invention proposes a light emitting diode structure, which can avoid the electrical short circuit between the p-type doped semiconductor layer and the n-type doped semiconductor layer caused by the silver glue overflowing to the side wall of the light-emitting diode chip.

The present invention also proposes a method for manufacturing a light-emitting diode structure, which has a higher process yield and lower manufacturing cost.

The present invention proposes a method for fabricating a light emitting diode structure as follows. Firstly, a light emitting diode chip and a carrier substrate are provided. The light-emitting diode chip is arranged on the carrier substrate, the light-emitting diode chip has a bottom surface facing the carrier substrate, at least one top surface opposite to the bottom surface, and at least one side wall connected to the top surface, and the light-emitting diode chip has a at least one electrode. Then, a continuous anti-oxidation material layer is formed on the carrier substrate. Next, part of the continuous anti-oxidation material layer is removed to form an anti-oxidation layer on the top surface of the light-emitting diode chip and part of the carrier substrate, so as to cover the electrodes arranged on the top surface and expose the sidewall. Then, an oxidation method is implemented to form an insulating layer on the sidewall of the LED chip. Afterwards, the anti-oxidation layer is removed.

In one embodiment of the present invention, the LED chip includes a first-type doped semiconductor layer, a second-type doped semiconductor layer, and a light-emitting layer, wherein the light-emitting layer is located between the first-type doped semiconductor layer and the second-type doped semiconductor layer. between doped semiconductor layers.

In an embodiment of the present invention, the material of the insulating layer includes the oxide of the first type doped semiconductor layer, the oxide of the light emitting layer and the oxide of the second type doped semiconductor layer.

In an embodiment of the invention, the material of the insulating layer includes gallium-containing oxide and nitrogen-containing oxide.

In an embodiment of the invention, the material of the insulating layer includes gallium-containing oxide and phosphorus-containing oxide.

The present invention proposes a method for fabricating a light emitting diode structure as follows. Firstly, a light emitting diode chip and a carrier substrate are provided. The light-emitting diode chip is arranged on the carrier substrate, the light-emitting diode chip has a bottom surface facing the carrier substrate, at least one top surface opposite to the bottom surface, and at least one side wall connected to the top surface, and the light-emitting diode chip has a at least one electrode. Next, a continuous covering material layer is formed on the carrier substrate. Then, part of the continuous cover material layer is removed to form a cover layer on the top surface and part of the carrier substrate to cover the electrodes. Next, a continuous insulating material layer is formed on the carrier substrate and covers the LED chips. Afterwards, the covering layer and the portion of the continuous insulating material layer located on the covering layer are removed to form an insulating layer on the sidewall of the LED chip.

In an embodiment of the present invention, the method for forming the continuous insulating material layer includes physical vapor deposition, chemical vapor deposition, sputtering or electron beam growth.

In an embodiment of the invention, a material of the insulating layer includes silicon-containing oxide.

In one embodiment of the present invention, the LED chip includes a first-type doped semiconductor layer, a second-type doped semiconductor layer, and a light-emitting layer, wherein the light-emitting layer is located between the first-type doped semiconductor layer and the second-type doped semiconductor layer. between doped semiconductor layers.

The present invention proposes a method for fabricating a light emitting diode structure as follows. Firstly, a light emitting diode chip and a carrier substrate are provided. The light-emitting diode chip is arranged on the carrier substrate, the light-emitting diode chip has a bottom surface facing the carrier substrate, at least one top surface opposite to the bottom surface, and at least one side wall connected to the top surface, and the light-emitting diode chip has a at least one electrode. Next, a continuous insulating material layer is formed on the carrier substrate to cover the LED chip. Then, a protective layer is formed on the sidewall, and the continuous insulating material layer is located between the protective layer and the sidewall. Afterwards, the part of the continuous insulating material layer not covered by the protective layer is removed to form an insulating layer on the sidewall of the LED chip. Then, remove the protective layer.

In one embodiment of the invention, the method of forming a continuous insulating material layer includes spin coating.

In an embodiment of the invention, the material of the continuous insulating material layer includes oxide sol containing silicon dioxide.

In one embodiment of the present invention, the LED chip includes a first-type doped semiconductor layer, a second-type doped semiconductor layer, and a light-emitting layer, wherein the light-emitting layer is located between the first-type doped semiconductor layer and the second-type doped semiconductor layer. between doped semiconductor layers.

The invention provides a light emitting diode structure including a light emitting diode chip and an insulating layer. The light-emitting diode chip has a bottom surface, at least one top surface opposite to the bottom surface, and at least one side wall connected with the top surface, and the light-emitting diode chip has an electrode arranged on the top surface. The insulating layer is configured on the sidewall and exposes the electrodes.

In an embodiment of the invention, the top surface of the insulating layer is exposed.

In one embodiment of the present invention, the LED chip includes a first-type doped semiconductor layer, a second-type doped semiconductor layer, and a light-emitting layer, wherein the light-emitting layer is located between the first-type doped semiconductor layer and the second-type doped semiconductor layer. between doped semiconductor layers.

In an embodiment of the present invention, the material of the insulating layer includes the oxide of the first type doped semiconductor layer, the oxide of the light emitting layer and the oxide of the second type doped semiconductor layer.

In an embodiment of the present invention, the material of the insulating layer includes gallium-containing oxide and nitrogen-containing oxide or includes gallium-containing oxide and phosphorus-containing oxide.

In an embodiment of the present invention, the material of the insulating layer includes silicon-containing oxide or sulfur and its compounds.

In an embodiment of the present invention, the insulating layer includes a physical vapor deposition layer, a chemical vapor deposition layer, a sputtering layer or an electron beam growth layer.

In summary, the present invention forms an insulating layer on the sidewall of the light emitting diode chip to avoid the p-type doped semiconductor layer and the n-type doped semiconductor layer caused by silver glue overflowing to the sidewall in the prior art. The problem of electrical short circuit between. In this way, the insulating layer can improve process yield and reduce manufacturing cost.

Description of drawings

In order to make the above-mentioned and other features and advantages of the present invention more comprehensible, the following specific embodiments are described in detail in conjunction with the accompanying drawings, wherein:

1A-1D are cross-sectional views illustrating a method for fabricating a light emitting diode structure according to an embodiment of the present invention.

2A-2D are cross-sectional views illustrating a method for fabricating a light emitting diode structure according to another embodiment of the present invention.

3A to 3C are cross-sectional views illustrating a method for fabricating a light emitting diode structure according to yet another embodiment of the present invention.

FIG. 4 is a cross-sectional view of a light emitting diode structure according to an embodiment of the present invention.

FIG. 5 is a cross-sectional view of a light emitting diode structure according to another embodiment of the present invention.

Detailed ways

1A-1D are cross-sectional views illustrating a method for fabricating a light emitting diode structure according to an embodiment of the present invention.

First, please refer to FIG. 1A , a light emitting diode chip 100 and a carrier substrate 200 are provided, and the light emitting diode chip 100 is disposed on the carrier substrate 200 . The carrier substrate 100 is, for example, blue tape or UV tape.

The light-emitting diode chip 100 has a bottom surface B facing the carrier substrate 200, two top surfaces U1, U2 opposite to the bottom surface B, and a plurality of sidewalls S connected to the top surfaces U1, U2, and the light-emitting diode chip 100 has a Multiple electrodes E1, E2 on U1, U2.

In this embodiment, the LED chip 100 may include a first-type doped semiconductor layer 112, a second-type doped semiconductor layer 114, and A light-emitting layer 116 in between. In addition, the LED chip 100 may further include an epitaxial layer 120 , and the epitaxial layer 120 is located between the LED chip 100 and the carrier substrate 200 .

Next, please refer to FIG. 1A again. In this embodiment, a continuous anti-oxidation material layer A1 is formed on the entire surface of the light-emitting diode chip 100, and its material is, for example, a photosensitive material such as photoresist. Then, please refer to FIG. 1B. In this embodiment, the continuous anti-oxidation material layer A1 on the sidewall S can be removed by exposure and development, so as to cover the top surfaces U1, U2 of the LED chip 100 and part of the carrier substrate 200. An anti-oxidation layer A is formed on it. The anti-oxidation layer A covers the electrodes E1 , E2 disposed on the top surfaces U1 , U2 , and exposes the sidewall S.

After that, referring to FIG. 1C , an oxidation method is performed to form an insulating layer I on the sidewall S of the LED chip 100. The oxidation method is, for example, dry oxidation or wet oxidation. The wet oxidation method is, for example, exposing the LED chip 100 to an environment containing moisture, and the dry oxidation method is, for example, exposing the LED chip 100 to an environment containing oxygen. In addition, in this embodiment, since the epitaxial layer 120 can also be oxidized, an insulating layer I is also formed on the sidewall 122 of the epitaxial layer 120 .

The material of the insulating layer I may include the oxide of the first type doped semiconductor layer 112 , the oxide of the light emitting layer 116 , the oxide of the second type doped semiconductor layer 114 and the oxide of the epitaxial layer 120 . In this embodiment, the material of the insulating layer I includes gallium-containing oxide and nitrogen-containing oxide. In other embodiments, the material of the insulating layer I includes oxides containing gallium and oxides containing phosphorus.

It should be noted that in this embodiment, the insulating layer I is formed on the sidewall S of the LED chip 100 , and the insulating layer I can fill defects on the sidewall S and passivate the sidewall S. In this way, the insulating layer I can reduce the probability of leakage current and improve the electrical stability of the LED chip 100 . In addition, the insulating layer I covering the sidewall S can protect the sidewall S from being polluted or damaged by the external environment or subsequent processes, thereby improving the process yield.

Furthermore, in the subsequent die-bonding process, since the insulating layer I covers the sidewall S of the light-emitting diode chip 100, it can avoid the p-type doped semiconductor layer and n The problem of electrical short circuit between type-doped semiconductor layers. In this way, forming the insulating layer I on the sidewall S can improve process yield and reduce manufacturing cost.

After that, referring to FIG. 1D , the anti-oxidation layer A is removed to expose the electrodes E1 and E2 . In this embodiment, when the anti-oxidation layer A is a photosensitive material, the method of removing the anti-oxidation layer A may be exposure and development.

2A-2D are cross-sectional views illustrating a method for fabricating a light emitting diode structure according to another embodiment of the present invention.

First, please refer to FIG. 2A , a light emitting diode chip 100 and a carrier substrate 200 are provided, and the light emitting diode chip 100 is disposed on the carrier substrate 200 .

Next, please refer to FIG. 2A again. In this embodiment, a continuous covering material layer C1 can be formed on the entire surface of the LED chip 100 . Then, referring to FIG. 2B , the continuous covering material layer C1 located on the sidewall S can be removed by exposure and development to expose the sidewall S, and the remaining covering layer C remains on the top surfaces U1, U2. C covers the electrodes E1, E2.

Then, referring to FIG. 2C , a continuous insulating material layer I1 is formed on the carrier substrate 200 and covers the LED chip 100 . The method of forming the continuous insulating material layer I1 is, for example, physical vapor deposition, chemical vapor deposition, sputtering, electron beam growth, or other suitable methods. After that, referring to FIG. 2D , the cover layer C and the continuous insulating material layer I1 on the cover layer C are removed to form an insulating layer I on the sidewall S of the LED chip 100 and expose the electrodes E1 and E2. . The material of the insulating layer I is, for example, silicon-containing oxide (such as silicon dioxide).

3A to 3C are cross-sectional views illustrating a method for fabricating a light emitting diode structure according to yet another embodiment of the present invention.

First, please refer to FIG. 3A , a light emitting diode chip 100 and a carrier substrate 200 are provided, and the light emitting diode chip 100 is disposed on the carrier substrate 200 . Next, a continuous insulating material layer I1 is formed on the carrier substrate 200 to cover the LED chip 100 , and the method of forming the continuous insulating material layer I1 is, for example, spin coating or other suitable coating methods. In this embodiment, the material of the continuous insulating material layer I1 is, for example, oxide sol, and the oxide sol includes a sol containing silicon dioxide, or a sol containing other suitable oxides.

Then, referring to FIG. 3B , a protective layer 310 is formed on the sidewall, and the continuous insulating material layer I1 is located between the protective layer 310 and the sidewall S. Referring to FIG. In this embodiment, the method of forming the protection layer 310 may be to firstly form a protection material layer (not shown) on the LED chip 100, and then remove the protection on the top surfaces U1 and U2 by exposure and development. material layer.

After that, referring to FIG. 3C , the continuous insulating material layer I1 not covered by the protective layer 310 on the top surface of the chip 100 and the protective layer 310 on the sidewall S are removed to form an LED on the sidewall S of the LED chip 100. an insulating layer I. The method of removing the continuous insulating material layer I1 includes etching.

It is worth noting that the above three manufacturing methods are illustrated by taking the planar LED structure as an example, and those skilled in the art can also apply the same manufacturing method to the vertical LED structure. The light emitting diode structure of an embodiment of the present invention will be described in detail below.

FIG. 4 is a cross-sectional view of a light emitting diode structure according to an embodiment of the present invention. Please refer to FIG. 4 , the light emitting diode structure 400 of this embodiment includes a light emitting diode chip 100 and an insulating layer I. The light-emitting diode chip 100 is a planar light-emitting diode chip, which has a bottom surface B, two top surfaces U1, U2 opposite to the bottom surface B, and a plurality of sidewalls S connected to the top surfaces U1, U2. The light-emitting diode chip 100 has A plurality of electrodes E1, E2 are arranged on the top surfaces U1, U2.

In this embodiment, the light-emitting diode chip 100 includes a first-type doped semiconductor layer 112, a second-type doped semiconductor layer 114, and a A light-emitting layer 116 in between. The materials of the first-type doped semiconductor layer 112, the second-type doped semiconductor layer 114, and the light-emitting layer 116 include III-V compounds such as gallium arsenide (GaAs), gallium phosphide (GaP), and gallium nitride (GaN). Semiconductor material. The first-type doped semiconductor layer 112 and the second-type doped semiconductor layer 114 can be an n-type doped semiconductor layer and a p-type doped semiconductor layer, respectively.

In addition, the LED chip 100 may further include an epitaxial layer 120 , and the epitaxial layer 120 is located between the LED chip 100 and the carrier substrate 200 . The material of the epitaxial layer 120 is, for example, silicon (Si), glass (Glass), gallium arsenide (GaAs), gallium nitride (GaN), aluminum gallium arsenide (AlGaAs), gallium phosphide (GaP), silicon carbide (SiC ), indium phosphide (InP), boron nitride (BN), aluminum oxide (Al ₂ O ₃ ) or aluminum nitride (AlN).

The insulating layer I is disposed on the sidewall S, and exposes the electrodes E1, E2 and the top surfaces U1, U2. In this embodiment, the insulating layer I also covers the sidewall 122 of the epitaxial layer 120 . In this embodiment, the material of the insulating layer I may include the oxide of the first-type doped semiconductor layer 112 , the oxide of the light-emitting layer 116 and the oxide of the second-type doped semiconductor layer 114 . In this embodiment, the material of the insulating layer I may include gallium-containing oxide and nitrogen-containing oxide. In addition, the material of the insulating layer I may include oxides containing gallium and oxides containing phosphorus. The material of the insulating layer includes silicon-containing oxide (such as silicon dioxide). In addition, in other embodiments, the insulating layer I is, for example, a physical vapor deposition layer, a chemical vapor deposition layer, a sputtering layer or an electron beam growth layer.

FIG. 5 is a cross-sectional view of a light emitting diode structure according to another embodiment of the present invention. Please refer to FIG. 5 , the light emitting diode structure 500 of this embodiment includes a light emitting diode chip 510 and an insulating layer I. It should be noted that the light emitting diode structure 500 of this embodiment is similar to the light emitting diode structure 400 of FIG. 4 , the only difference between them is that the light emitting diode chip 510 of this embodiment is a vertical light emitting diode chip. In addition, the LED chip 510 further includes a conductive layer 512 located between the LED chip 510 and the electrode E2 , and the insulating layer I also covers the sidewall 512 a of the conductive layer 512 .

To sum up, the present invention forms an insulating layer on the sidewall of the light-emitting diode chip to fill the defect on the sidewall and passivate the sidewall. In this way, the insulating layer can reduce the probability of leakage current and improve the electrical stability of the LED chip. In addition, the insulating layer covering the sidewall can protect the sidewall from being polluted or damaged by the external environment or subsequent processes, thereby improving the process yield.

Furthermore, in the subsequent die-bonding process, since the insulating layer covers the sidewalls of the light-emitting diode chip, it can avoid the p-type doped semiconductor layer and the n-type doped semiconductor layer caused by silver glue overflowing to the sidewalls in the known technology. The problem of electrical short circuit between semiconductor layers. In this way, the insulating layer can improve process yield and reduce manufacturing cost.

Although the present invention has been disclosed above with the embodiments, it is not intended to limit the present invention. Anyone with ordinary knowledge in the field can make some changes and modifications without departing from the spirit and scope of the present invention. Therefore, The scope of protection of the present invention should be defined by the claims.

Claims (9)

1. the manufacture method of a light emitting diode construction comprises:

One light-emitting diode chip for backlight unit and a bearing substrate are provided; This light-emitting diode chip for backlight unit is disposed on this bearing substrate; This light-emitting diode chip for backlight unit has towards a bottom surface of this bearing substrate, with respect at least one end face of this bottom surface and at least one sidewall that links to each other with this end face, and this light-emitting diode chip for backlight unit has at least one electrode that is disposed on this end face;

On this bearing substrate, form a continuity oxidation-resistant material layer;

Remove this continuity oxidation-resistant material layer of part, to form an anti oxidation layer in reaching on this end face of this light-emitting diode chip for backlight unit on this bearing substrate of part, this anti oxidation layer covers and is disposed at this electrode on this end face, and exposes this sidewall;

Implement an oxidizing process, on this sidewall of this light-emitting diode chip for backlight unit, to form an insulating barrier; And

Remove this anti oxidation layer.

2. the manufacture method of light emitting diode construction as claimed in claim 1; Wherein this light-emitting diode chip for backlight unit comprises one first type doping semiconductor layer, one second type doping semiconductor layer and a luminescent layer, and wherein this luminescent layer is between this first type doping semiconductor layer and this second type doping semiconductor layer.

3. the manufacture method of light emitting diode construction as claimed in claim 2, wherein the material of this insulating barrier comprises the oxide of the first type doping semiconductor layer, the oxide of luminescent layer and the oxide of the second type doping semiconductor layer.

4. the manufacture method of light emitting diode construction as claimed in claim 1, wherein the material of this insulating barrier comprises the oxide that contains gallium and nitrogenous oxide.

5. the manufacture method of light emitting diode construction as claimed in claim 1, wherein the material of this insulating barrier comprises the oxide that contains gallium and phosphorous oxide.

6. the manufacture method of a light emitting diode construction comprises:

One light-emitting diode chip for backlight unit and a bearing substrate are provided; This light-emitting diode chip for backlight unit is disposed on this bearing substrate; This light-emitting diode chip for backlight unit has towards a bottom surface of this bearing substrate, with respect at least one end face of this bottom surface and at least one sidewall that links to each other with this end face, and this light-emitting diode chip for backlight unit has at least one electrode that is disposed on this end face;

On this bearing substrate, form a continuity layer of cover material;

Remove this continuity layer of cover material of part, to form a cover layer, to cover this electrode in reaching on this end face on this bearing substrate of part;

On this bearing substrate, form a continuity insulation material layer, and cover this light-emitting diode chip for backlight unit; And

Remove this supratectal part that is positioned at of this cover layer and this continuity insulation material layer, on this sidewall of this light-emitting diode chip for backlight unit, to form an insulating barrier.

7. the manufacture method of light emitting diode construction as claimed in claim 6, the method that wherein forms this continuity insulation material layer comprise that physical vapour deposition (PVD), chemical vapour deposition (CVD), sputter or electron beam grow up.

8. the manufacture method of light emitting diode construction as claimed in claim 6, wherein the material of this insulating barrier comprises siliceous oxide.

9. the manufacture method of light emitting diode construction as claimed in claim 6; Wherein this light-emitting diode chip for backlight unit comprises one first type doping semiconductor layer, one second type doping semiconductor layer and a luminescent layer, and wherein this luminescent layer is between this first type doping semiconductor layer and this second type doping semiconductor layer.

Images