CN102364707A - Lighting emitting diode (LED) chip structure capable of improving current transmission clogging - Google Patents
Lighting emitting diode (LED) chip structure capable of improving current transmission clogging Download PDFInfo
- Publication number
- CN102364707A CN102364707A CN2011103825144A CN201110382514A CN102364707A CN 102364707 A CN102364707 A CN 102364707A CN 2011103825144 A CN2011103825144 A CN 2011103825144A CN 201110382514 A CN201110382514 A CN 201110382514A CN 102364707 A CN102364707 A CN 102364707A
- Authority
- CN
- China
- Prior art keywords
- gallium nitride
- nitride layer
- electrode
- type gallium
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000005540 biological transmission Effects 0.000 title claims abstract description 36
- 229910002601 GaN Inorganic materials 0.000 claims abstract description 72
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims abstract description 72
- 239000000758 substrate Substances 0.000 claims abstract description 27
- 238000002161 passivation Methods 0.000 claims description 14
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- 239000000463 material Substances 0.000 claims description 4
- 229910052594 sapphire Inorganic materials 0.000 claims description 3
- 239000010980 sapphire Substances 0.000 claims description 3
- 235000012239 silicon dioxide Nutrition 0.000 claims description 3
- 239000000377 silicon dioxide Substances 0.000 claims description 3
- 238000005516 engineering process Methods 0.000 abstract description 8
- 238000000605 extraction Methods 0.000 abstract description 4
- 238000010438 heat treatment Methods 0.000 abstract description 4
- 230000002035 prolonged effect Effects 0.000 abstract description 4
- 230000007704 transition Effects 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 238000002360 preparation method Methods 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- CHPZKNULDCNCBW-UHFFFAOYSA-N gallium nitrate Chemical compound [Ga+3].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O CHPZKNULDCNCBW-UHFFFAOYSA-N 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- 239000004411 aluminium Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 229940044658 gallium nitrate Drugs 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
Images
Landscapes
- Led Devices (AREA)
Abstract
The invention relates to a lighting emitting diode (LED) chip structure capable of improving current transmission clogging. The structure comprises: a substrate, a P electrode and an N electrode, wherein the P electrode and the N electrode are arranged above the substrate. The N electrode is electrically connected with an N-typed gallium nitride layer which is above the substrate. The N-typed gallium nitride layer is provided with an improvement transmission groove. The improvement transmission groove is in the N-typed gallium nitride layer and extends from an N-typed gallium nitride layer surface to the substrate. The N electrode is filled in the improvement transmission groove and covers the surface corresponding to the N-typed gallium nitride layer. In the invention, the N electrode located in the improvement transmission groove can share corresponding electric potential wires. The electric potential wires can not gather in a combination part of the N electrode and the N-typed gallium nitride layer. A contact area of the electric potential wires can be enlarged. The current clogging generated when the electric potential wires are gathered excessively can be avoided. Heating phenomenon generated by the current clogging can be reduced. Simultaneously, a light extraction efficiency of the LED chip can be improved. A structure is simple and compact and is compatible with a current processing technology. A service life of the LED chip can be prolonged. The structure is safe and reliable.
Description
Technical field
The present invention relates to a kind of led chip structure, especially a kind ofly improve the led chip structure that current delivery is stopped up, belong to the technical field of led chip.
Background technology
LED (Lighting Emitting Diode) is a light-emitting diode, is a kind of semiconductor solid luminescence device.Current energy-conserving and environment-protective are global major issues, and the low-carbon (LC) life is rooted in the hearts of the people gradually.At lighting field, the application of power LED luminous product is just attracting common people's sight, and it is the novel illumination light source epoch of representative that 21st century will get into LED.Characteristics such as LED has energy-saving and environmental protection, long, sound construction of life-span, and the response time is fast can be widely used in fields such as various general lightings, backlight, demonstration, indication and urban landscape.The led light source manufacturing process is divided into chip preparation and encapsulation.Wherein, the general preparation technology of power LED chip is: at first on substrate, make gallium nitrate based epitaxial wafer through the MOCVD epitaxial furnace, next two electrodes of the PN junction of LED are processed, and the LED workprint is carried out attenuate, scribing; Then workprint is carried out sorting and test.
At present, two electrodes of correspondence are through vapor deposition formation among the PN in traditional led chip, and chip is easy to generate the electric current obstruction when transmitting between two electrodes of chip of electric current homonymy bipolar electrode, and is as shown in Figure 1.The corresponding potential lines of curve representation among Fig. 1; Point to the joint portion of N electrode and n type gallium nitride layer from transparency conducting layer when potential lines; Assemble when a lot of when potential lines, promptly be easy to generate obstruction, thereby make led chip produce corresponding heat; The led chip luminous efficiency of corresponding region is low, influences the use of led chip.
Summary of the invention
The objective of the invention is to overcome the deficiency that exists in the prior art, a kind of led chip structure that current delivery is stopped up of improving is provided, it is simple and compact for structure; Improved the luminous efficiency of led chip; Compatible mutually with existing processing technology, prolonged led chip useful life, safe and reliable.
According to technical scheme provided by the invention, saidly improve the led chip structure that current delivery is stopped up, comprise substrate and be positioned at the P electrode and the N electrode of said substrate top; Said N electrode is electrically connected with the n type gallium nitride layer of substrate top; Be provided with in the said n type gallium nitride layer and improve transmission slot, the said transmission slot that improves extends to the substrate direction from the n type gallium nitride laminar surface in the n type gallium nitride layer, and said N electrode is filled in and improves in the transmission slot, and is covered in the corresponding surface of n type gallium nitride layer.
The said degree of depth of transmission slot in the n type gallium nitride layer of improving is 1～2 μ m.Said n type gallium nitride layer is covered on the substrate; Said n type gallium nitride layer is provided with SQW; Said SQW is provided with P type gallium nitride layer; Said P type gallium nitride layer is provided with transparency conducting layer, and said transparency conducting layer is provided with passivation layer, and said passivation layer coats transparency conducting layer and is positioned at the P type gallium nitride layer and the SQW of said transparency conducting layer below; Said P electrode passes passivation layer and is electrically connected with transparency conducting layer.
Said n type gallium nitride layer is provided with corresponding to the end that links to each other with the N electrode and is connected step.Said substrate is a sapphire substrate.The material of said passivation layer comprises silicon dioxide.
Advantage of the present invention: the n type gallium nitride layer is set on the substrate, P type gallium nitride layer is set on the n type gallium nitride layer, the n type gallium nitride layer is connected with N electrode equipotential; P type gallium nitride layer is connected with P electrode equipotential through transparency conducting layer, thereby can constitute two electrodes of led chip; Be provided with in the n type gallium nitride layer and improve transmission slot, the N electrode is filled in and improves in the transmission slot and cover corresponding n type gallium nitride laminar surface; Can share corresponding potential lines through being positioned at the N electrode that improves transmission slot; Avoid potential lines to accumulate in the joint portion of N electrode and n type gallium nitride layer; Can enlarge the contact area of potential lines, produce electric current when avoiding the potential lines transition to assemble and stop up, reduce electric current and stop up the heating phenomenon that produces; Simultaneously, can improve the light extraction efficiency of led chip; Simple and compact for structure, compatible mutually with existing processing technology, prolonged led chip useful life, safe and reliable.
Description of drawings
Fig. 1 is the sketch map of existing led chip structure.
Fig. 2 is a structural representation of the present invention.
Embodiment
Below in conjunction with concrete accompanying drawing and embodiment the present invention is described further.
As shown in Figure 2: as to the present invention includes substrate 1, n type gallium nitride layer 2, SQW 3, P type gallium nitride layer 4, transparency conducting layer 5, P electrode 6, passivation layer 7, improve transmission slot 8, N electrode 9 and connect step 10.
As shown in Figure 2: be deposited with n type gallium nitride layer 2 on the said substrate 1, said n type gallium nitride layer 2 is covered on the substrate 1, and substrate 1 adopts sapphire substrate.N type gallium nitride layer 2 is provided with SQW 3, and said SQW 3 is provided with P type gallium nitride layer 4; In order to enlarge current lead-through, said P type gallium nitride layer 4 is provided with transparency conducting layer 5, and said transparency conducting layer 5 is covered on the P type gallium nitride layer 4, and is electrically connected with said P type gallium nitride layer 4.Be deposited with passivation layer 7 on the transparency conducting layer 5, said passivation layer 7 is covered in transparency conducting layer 5, and coats the P type gallium nitride layer 4 and the SQW 3 of transparency conducting layer 5 belows.The material of passivation layer 7 comprises silicon dioxide, and passivation layer 7 is provided with P electrode 6, and passivation layer 7 is provided with contact hole, and P electrode 6 is filled in the contact hole, and is connected with transparency conducting layer 5 equipotentials.The material of said SQW 3, P type gallium nitride layer 4 and transparency conducting layer 5, thickness and to form technology all consistent with existing led chip preparation technology.
In order can n type gallium nitride layer 2 to be drawn, said n type gallium nitride layer 2 is provided with and connects step 10, and n type gallium nitride layer 2 can expose corresponding surface through connecting step 10, thereby N electrode 9 can be set on n type gallium nitride layer 2.When N electrode 9 is connected with P electrode 6; The potential lines transition is assembled the electric current that causes and is stopped up; Etching forms and improves transmission slot 8 in n type gallium nitride layer 2; The said transmission slot 8 that improves extends in n type gallium nitride layer 2 from the surface that connects step 10, and promptly the direction to substrate 1 is extended from n type gallium nitride layer 2 surface; And improve distance that transmission slot 8 extends in n type gallium nitride layer 2 thickness less than n type gallium nitride layer 2, particularly, improving the degree of depth of transmission slot 8 in n type gallium nitride layer 2 is 1～2 μ m.N electrode 9 is filled in and improves in the transmission slot 8, and is connected with n type gallium nitride layer 2 equipotential; Thereby form the structure of P electrode 6 with the N electrode 9 of led chip.After etching is improved transmission slot 8, when N electrode 9 is set, earlier through metal filled in improving transmission slot 8, make the metal filled transmission slot 8 that improves, said metal can adopt aluminium; Vapor deposition through conventional electrodes forms N electrode 9 and P electrode 6 simultaneously then, after above-mentioned steps, can improve the reliability that forms behind the N electrode 9.
As shown in Figure 2: during use, said led chip links to each other with external power source respectively through N electrode 9 and P electrode 6.When led chip with after power supply is connected, electric current gets into P type gallium nitride layers 4 through transparency conducting layer 5 diffusion backs, potential lines is pointed to N electrodes 9 from P electrode 6, during with P electrode 6 formation loops, led chip outwards sends light through N electrode 9.In n type gallium nitride layer 2, be provided with and improve transmission slot 8, and N electrode 9 under-filled improved transmission slot 8 N electrode 9 equal equipotentials outward owing to be positioned to improve transmission slot 8 and be positioned at when improving transmission slot 8 backs; The said sidewall that improves transmission slot 8 can be shared corresponding potential lines; Avoid existing potential lines all to concentrate the joint portion of pointing to N electrode 9 and n type gallium nitride layer 2; Can enlarge the contact area of potential lines, produce electric current when avoiding the potential lines transition to assemble and stop up, reduce electric current and stop up the heating phenomenon that produces; Simultaneously, can improve the light extraction efficiency of led chip.Potential lines is pointed to the sidewall improve transmission slot 8 from transparency conducting layer among Fig. 2, through after improving transmission slot 8 sidewalls and sharing corresponding potential lines, can avoid the transition of potential lines to assemble, and reduces the situation that electric current stops up.
On the substrate 1 of the present invention n type gallium nitride layer 2 is set, P type gallium nitride layer 4 is set on the n type gallium nitride layer 2, n type gallium nitride layer 2 is connected with N electrode 9 equipotentials; P type gallium nitride layer 4 is connected with P electrode 6 equipotentials through transparency conducting layer 5, thereby can constitute two electrodes of led chip; Be provided with in the n type gallium nitride layer 2 and improve transmission slot 8, N electrode 9 is filled in and improves in the transmission slot 8 and cover corresponding n type gallium nitride layer 2 surface; Can share corresponding potential lines through being positioned at the N electrode 9 that improves transmission slot 8; Avoid potential lines to accumulate in the joint portion of N electrode 9 and n type gallium nitride layer 2; Can enlarge the contact area of potential lines, produce electric current when avoiding the potential lines transition to assemble and stop up, reduce electric current and stop up the heating phenomenon that produces; Simultaneously, can improve the light extraction efficiency of led chip; Simple and compact for structure, compatible mutually with existing processing technology, prolonged led chip useful life, safe and reliable.
Claims (6)
1. one kind is improved the led chip structure that current delivery is stopped up, and comprises substrate (1) and is positioned at the P electrode (6) and N electrode (9) of said substrate (1) top; Said N electrode (9) is electrically connected with the n type gallium nitride layer (2) of substrate (1) top; It is characterized in that: be provided with in the said n type gallium nitride layer (2) and improve transmission slot (8); The said transmission slot (8) that improves extends to substrate (1) direction from n type gallium nitride layer (2) surface in n type gallium nitride layer (2); Said N electrode (9) is filled in and improves in the transmission slot (8), and is covered in the corresponding surface of n type gallium nitride layer (2).
2. the led chip structure of improving the current delivery obstruction according to claim 1, it is characterized in that: the said degree of depth of transmission slot (8) in n type gallium nitride layer (2) of improving is 1～2 μ m.
3. the led chip structure of improving the current delivery obstruction according to claim 1; It is characterized in that: said n type gallium nitride layer (2) is covered on the substrate (1); Said n type gallium nitride layer (2) is provided with SQW (3); Said SQW (3) is provided with P type gallium nitride layer (4); Said P type gallium nitride layer (4) is provided with transparency conducting layer (5), and said transparency conducting layer (5) is provided with passivation layer (7), and said passivation layer (7) coats transparency conducting layer (5) and is positioned at the P type gallium nitride layer (4) and SQW (3) of said transparency conducting layer (5) below; Said P electrode (6) passes passivation layer (7) and is electrically connected with transparency conducting layer (5).
4. the led chip structure of improving the current delivery obstruction according to claim 3 is characterized in that: said n type gallium nitride layer (2) is provided with corresponding to the end that links to each other with N electrode (9) and is connected step (10).
5. the led chip structure of improving the current delivery obstruction according to claim 1, it is characterized in that: said substrate (1) is a sapphire substrate.
6. the led chip structure of improving the current delivery obstruction according to claim 3, it is characterized in that: the material of said passivation layer (7) comprises silicon dioxide.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011103825144A CN102364707A (en) | 2011-11-28 | 2011-11-28 | Lighting emitting diode (LED) chip structure capable of improving current transmission clogging |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011103825144A CN102364707A (en) | 2011-11-28 | 2011-11-28 | Lighting emitting diode (LED) chip structure capable of improving current transmission clogging |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN102364707A true CN102364707A (en) | 2012-02-29 |
Family
ID=45691265
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2011103825144A Pending CN102364707A (en) | 2011-11-28 | 2011-11-28 | Lighting emitting diode (LED) chip structure capable of improving current transmission clogging |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN102364707A (en) |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102867898A (en) * | 2012-10-13 | 2013-01-09 | 江苏新广联科技股份有限公司 | Light-emitting diode chip structure |
| CN102945904A (en) * | 2012-10-13 | 2013-02-27 | 江苏新广联科技股份有限公司 | Gallium-nitride-based same-side electrode light emitting diode (LED) chip structure |
| CN104332543A (en) * | 2014-10-29 | 2015-02-04 | 华灿光电股份有限公司 | Light-emitting diode chip and manufacturing method thereof |
| CN105374910A (en) * | 2014-08-29 | 2016-03-02 | 惠州比亚迪实业有限公司 | Led chip and manufacturing method thereof |
| CN105470360A (en) * | 2014-08-29 | 2016-04-06 | 比亚迪股份有限公司 | Led chip and manufacturing method thereof |
| CN106558638A (en) * | 2016-11-30 | 2017-04-05 | 东莞市佳乾新材料科技有限公司 | A LED chip with high luminous efficiency and its manufacturing method |
| CN106653972A (en) * | 2016-06-21 | 2017-05-10 | 深圳大学 | LED chip and method for manufacturing same |
| WO2024185436A1 (en) * | 2023-03-03 | 2024-09-12 | ソニーグループ株式会社 | Surface-emitting laser |
| CN119208468A (en) * | 2024-09-27 | 2024-12-27 | 山西中科潞安紫外光电科技有限公司 | A high reliability LED chip and preparation method thereof |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH05160437A (en) * | 1991-12-09 | 1993-06-25 | Toyoda Gosei Co Ltd | Light emitting element of gallium nitride series compound semiconductor |
| CN202025790U (en) * | 2011-03-22 | 2011-11-02 | 广东银雨芯片半导体有限公司 | Improved light emitting diode chip with current barrier layer |
| CN202405304U (en) * | 2011-11-28 | 2012-08-29 | 江苏新广联科技股份有限公司 | LED chip structure for improving current transmission blocking |
-
2011
- 2011-11-28 CN CN2011103825144A patent/CN102364707A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH05160437A (en) * | 1991-12-09 | 1993-06-25 | Toyoda Gosei Co Ltd | Light emitting element of gallium nitride series compound semiconductor |
| CN202025790U (en) * | 2011-03-22 | 2011-11-02 | 广东银雨芯片半导体有限公司 | Improved light emitting diode chip with current barrier layer |
| CN202405304U (en) * | 2011-11-28 | 2012-08-29 | 江苏新广联科技股份有限公司 | LED chip structure for improving current transmission blocking |
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102867898A (en) * | 2012-10-13 | 2013-01-09 | 江苏新广联科技股份有限公司 | Light-emitting diode chip structure |
| CN102945904A (en) * | 2012-10-13 | 2013-02-27 | 江苏新广联科技股份有限公司 | Gallium-nitride-based same-side electrode light emitting diode (LED) chip structure |
| CN105374910A (en) * | 2014-08-29 | 2016-03-02 | 惠州比亚迪实业有限公司 | Led chip and manufacturing method thereof |
| CN105470360A (en) * | 2014-08-29 | 2016-04-06 | 比亚迪股份有限公司 | Led chip and manufacturing method thereof |
| CN104332543A (en) * | 2014-10-29 | 2015-02-04 | 华灿光电股份有限公司 | Light-emitting diode chip and manufacturing method thereof |
| CN104332543B (en) * | 2014-10-29 | 2017-09-26 | 华灿光电股份有限公司 | A kind of light-emitting diode chip for backlight unit and preparation method thereof |
| CN106653972A (en) * | 2016-06-21 | 2017-05-10 | 深圳大学 | LED chip and method for manufacturing same |
| CN106558638A (en) * | 2016-11-30 | 2017-04-05 | 东莞市佳乾新材料科技有限公司 | A LED chip with high luminous efficiency and its manufacturing method |
| WO2024185436A1 (en) * | 2023-03-03 | 2024-09-12 | ソニーグループ株式会社 | Surface-emitting laser |
| CN119208468A (en) * | 2024-09-27 | 2024-12-27 | 山西中科潞安紫外光电科技有限公司 | A high reliability LED chip and preparation method thereof |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN102364707A (en) | Lighting emitting diode (LED) chip structure capable of improving current transmission clogging | |
| CN102315353A (en) | Inverted integrated LED and production method thereof | |
| CN102394267B (en) | LED chip capable of improving light extraction efficiency | |
| CN103996772B (en) | Light-emitting diode chip and manufacturing method thereof | |
| CN104576872B (en) | Semiconductor LED chip and manufacturing method thereof | |
| CN101740557B (en) | Vertical AC LED | |
| CN103296166B (en) | Light emitting diode assembly and flip chip type light emitting diode packaging assembly | |
| CN103219352B (en) | LED combination chip of array architecture and preparation method thereof | |
| CN102751410A (en) | LED (Light Emitting Diode) chip provided with stepped current blocking structure and fabricating method thereof | |
| CN104157767B (en) | A kind of LED chip electrode structure with non-conductive substrate | |
| CN101887938B (en) | LED chip and manufacturing method thereof | |
| CN202405304U (en) | LED chip structure for improving current transmission blocking | |
| CN102437263A (en) | Light-emitting diode (LED) and manufacturing method thereof | |
| CN106206901A (en) | LED chip and manufacture method thereof | |
| CN102760809A (en) | Light-emitting diode with N type substrate and manufacturing method thereof | |
| CN104143598A (en) | A kind of electrode structure of substrateless LED chip | |
| CN203521455U (en) | LED chip | |
| US20160351751A1 (en) | Semiconductor light emitting structure and manufacturing method thereof | |
| CN106169528B (en) | A kind of light emitting diode construction and preparation method thereof | |
| CN102881796A (en) | Light-emitting device with annular reflective layer | |
| CN102969418B (en) | Structure of gallium nitride based light-emitting diode with 3D (Three-Dimensional) vertical structure | |
| CN104795480A (en) | Positive packaging LED chip of N-electrode extension-wire dotted distribution and preparation method of chip | |
| CN203481264U (en) | White light LED chip | |
| CN102544048A (en) | High-power GaN-base light-emitting diode and manufacturing method thereof | |
| CN103594591B (en) | There is the manufacture method of the inverted light-emitting diode (LED) of transparency electrode |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C12 | Rejection of a patent application after its publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20120229 |