CN102361037A - Four-layer antireflection film of crystalline silicon solar battery and preparation method thereof - Google Patents
Four-layer antireflection film of crystalline silicon solar battery and preparation method thereof Download PDFInfo
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Abstract
The invention discloses a four-layer antireflection film of a crystalline silicon solar battery. Four layers of silicon nitride films are sequentially formed on the surface of the crystalline silicon solar battery outward, wherein the first layer of silicon nitride film has a thickness of 10-15nm and a refractive index of 2.2-2.4; the second layer of silicon nitride film has a thickness of 30-35nm and a refractive index of 1.95-2.05; the third layer of silicon nitride film has a thickness of 8-10nm and a refractive index of 2.3-2.4; and the fourth layer of silicon nitride film has a thickness of 30-35nm and a refractive index of 2.1-2.15. With the adoption of a tubular PECVD (Plasma Enhanced Chemical Vapor Deposition) coating, the deposition temperatures of the four layers of films range from 450 to 470 DEG C; the ammonia flow of the first layer of film is 3000-3500 sccm and the silane flow of the first layer of film is 800-850 sccm; the ammonia flow of the second layer of film is 6500-7000 sccm and the silane flow of the second layer of film is 700-730 sccm; the ammonia flow of the third layer of film is 4000-4500 sccm and the silane flow of the third layer of film is 780-800 sccm; and the ammonia flow of the fourth layer of film is 6500-6800 sccm and the silane flow of the fourth layer of film is 880-900 sccm. According to the four-layer antireflection film of the crystalline silicon solar battery, the reflection loss on the surface of the prepared crystalline silicon solar battery is reduced by 0.9%-1.2%, and the conversion efficiency of the crystalline silicon solar battery is improved by 0.15-0.25%.
Description
Technical field
The present invention relates to a kind of solar cell manufacturing technology, particularly a kind of crystal silicon solar energy battery antireflective coating and preparation method thereof.
Background technology
In order to improve the photoelectric conversion efficiency of crystal silicon solar energy battery, should reduce the loss of battery surface reflection of light, increase optical transmission.The making of antireflective coating directly affects solar cell to the reflection of incident light rate, and the raising of solar battery efficiency is played important effect.
The main reflection loss of using tubular type or board-like PECVD equipment plating individual layer or double-deck silicon nitride film to reduce solar cell surface in the large-scale production of crystal silicon solar energy battery at present; Increase the passivation effect of solar cell, thereby improve the photoelectric conversion efficiency of crystal silicon solar energy battery.But existing individual layer silicon nitride film and double-deck silicon nitride film; Though can play passivation preferably and anti-reflective effect; But its reflectivity is still higher, and the reflectivity of monofilm is at 6.5%-7%, and the reflectivity of duplicature is at 5.8%-6%; Still have more reflection loss, the photoelectric conversion efficiency of crystal silicon solar energy battery is still very low.
Summary of the invention
The object of the invention is exactly to solve the problems referred to above that exist in the prior art, provides a kind of reduction battery surface to reflection of light, four layers of antireflective coating of crystal silicon solar energy battery of the photoelectric conversion efficiency of raising solar cell and preparation method thereof.
For realizing above-mentioned purpose; Technical solution of the present invention is: four layers of antireflective coating of a kind of crystal silicon solar energy battery, and it is to be made up of four tunics, ground floor is the ground floor silicon nitride film of solar cell surface of crystalline silicon; Thickness is 10～15nm; Refractive index is 2.2～2.4, can play good passivation effect, can not cause the absorption loss water of too high silicon nitride film simultaneously; The second layer is a second layer silicon nitride film, and thickness is 30～35nm, and refractive index is 1.95～2.05, has good anti-reflective effect in short wavelength regions, simultaneously through accessing good passivation effect behind the sintering; The 3rd layer is the 3rd layer of silicon nitride film, and thickness is 8～10nm, and refractive index is 2.3-2.4; The 4th layer is the 4th layer of silicon nitride film, and thickness is 30～35nm, and refractive index is 2.1-2.15, has anti-reflective effect preferably in short wavelength regions.
The preparation method of four layers of antireflective coating of above-mentioned said crystal silicon solar energy battery; It is to preparing the antireflective matte through making herbs into wool; Diffusion preparation PN junction; Etching is removed the PN junction around the crystal silicon chip, and the crystal silicon chip that cleaning and removing is removed behind the treatment step of phosphorosilicate glass uses tubular type PECVD filming equipment to carry out the preparation of N type surface four tunics, and it may further comprise the steps:
(1) silicon chip after the etching is placed in the deposit cavity of tubular type PECVD filming equipment; Depositing temperature is 450 ℃-470 ℃; In boiler tube, feeding gas flow is the ammonia of 3000-3500sccm, the silane of 800-850sccm; To generate thickness second be 10～15nm to ionization 90-150 under the power of 5300-5700W, and refractive index is 2.2～2.4 ground floor silicon nitride film;
The silicon chip that (2) will be coated with the ground floor silicon nitride film is again proceeded deposition; Depositing temperature is 450 ℃-470 ℃; In boiler tube, feeding gas flow is the ammonia of 6500-7000sccm, the silane of 700-730sccm; Ionization 250-300 second under the power of 5300-5700W, on the ground floor silicon nitride film, generating thickness is 30～35nm, and refractive index is 1.95～2.05 second layer silicon nitride film;
The silicon chip that (3) will be coated with second layer silicon nitride film is again proceeded deposition; Depositing temperature is 450 ℃-470 ℃; In boiler tube, feeding gas flow is the ammonia of 4000-4500sccm, the silane of 780-800sccm; Ionization 80-100 second under the power of 5300-5700W, on second layer silicon nitride film, generating thickness is 8～10nm, and refractive index is the 3rd layer of silicon nitride film of 2.3-2.4;
The silicon chip that (4) will be coated with the 3rd layer of silicon nitride film is again proceeded deposition; Depositing temperature is 450 ℃-470 ℃; In boiler tube, feeding gas flow is the ammonia of 6500-6800sccm, the silane of 880-900sccm; Ionization 260-300 second under the power of 5300-5700W, on the 3rd layer of silicon nitride film, generating thickness is 30～35nm, and refractive index is the 4th layer of silicon nitride film of 2.1-2.15.
The present invention can reduce 0.8%-1.2% with the reflection loss on the crystal silicon solar energy battery surface of processing, with the conversion efficiency raising 0.10%-0.25% of the crystal silicon solar energy battery of processing with respect to the silicon chip of plating monofilm.The present invention is applicable to the battery sheet of polysilicon, monocrystalline silicon and type monocrystalline silicon.
Description of drawings
Fig. 1 is the structural representation of four layers of antireflective coating of the present invention.
Embodiment
Below in conjunction with specific embodiment the present invention is done further description.
To preparing the antireflective matte through making herbs into wool; Diffusion preparation PN junction; Etching is removed the PN junction around the crystal silicon chip, and the crystal silicon chip that cleaning and removing is removed behind the treatment step of phosphorosilicate glass uses tubular type PECVD filming equipment to carry out the preparation of N type surface four tunics, and it may further comprise the steps:
(1) silicon chip after the etching is placed in the deposit cavity of tubular type PECVD filming equipment; Depositing temperature is 450 ℃; In boiler tube, feeding gas flow is the ammonia of 3000sccm, the silane of 800sccm, and ionization generated the ground floor silicon nitride film in 100 seconds under the power of 5600W;
The silicon chip that (2) will be coated with the ground floor silicon nitride film is again proceeded deposition; Depositing temperature is 450 ℃; In boiler tube, feeding gas flow is the ammonia of 6500sccm, the silane of 700sccm, and ionization is 250 seconds under the power of 5300W, on the ground floor silicon nitride film, generates second layer silicon nitride film;
The silicon chip that (3) will be coated with second layer silicon nitride film is again proceeded deposition; Depositing temperature is 450 ℃; In boiler tube, feeding gas flow is the ammonia of 4000sccm, the silane of 780sccm, and ionization is 80 seconds under the power of 5300W, on second layer silicon nitride film, generates the 3rd layer of silicon nitride film;
The silicon chip that (4) will be coated with the 3rd layer of silicon nitride film is again proceeded deposition; Depositing temperature is 450 ℃; In boiler tube, feeding gas flow is the ammonia of 6500sccm, the silane of 880sccm, and ionization is 260 seconds under the power of 5300W, on the 3rd layer of silicon nitride film, generates the 4th layer of silicon nitride film.
With respect to following in the advantage of polysilicon surface plating individual layer silicon nitride antireflective coating and double-deck silicon nitride antireflective coating technology:
| The silicon nitride film type | Monofilm | Duplicature | Four tunics |
| Reflectivity (%) | 6.6 | 6.2 | 5.4 |
Reflection loss has reduced by 1.2% with respect to monofilm, has reduced by 0.8% with respect to duplicature.
| The silicon nitride film type | Eta | Isc | Uoc | FF |
| The individual layer silicon nitride film | 16.74 | 8.324 | 0.622 | 78.6 |
| Double layer antireflection coating | 16.89 | 8.331 | 0.623 | 79.1 |
| Four layers of silicon nitride film | 16.99 | 8.355 | 0.623 | 79.4 |
Efficient has improved 0.25% with respect to monofilm, has improved 0.10% with respect to duplicature.
To preparing the antireflective matte through making herbs into wool; Diffusion preparation PN junction; Etching is removed the PN junction around the crystal silicon chip, and the polycrystal silicon chip that cleaning and removing is removed behind the treatment step of phosphorosilicate glass uses tubular type PECVD filming equipment to carry out the preparation of N type surface four tunics, and it may further comprise the steps:
(1) silicon chip after the etching is placed in the deposit cavity of tubular type PECVD filming equipment; Depositing temperature is 460 ℃; In boiler tube, feeding gas flow is the ammonia of 3200sccm, the silane of 830sccm, and ionization generated the ground floor silicon nitride film in 90 seconds under the power of 5300W;
The silicon chip that (2) will be coated with the ground floor silicon nitride film is again proceeded deposition; Depositing temperature is 460 ℃; In boiler tube, feeding gas flow is the ammonia of 6600sccm, the silane of 710sccm, and ionization is 260 seconds under the power of 5400W, on the ground floor silicon nitride film, generates second layer silicon nitride film;
The silicon chip that (3) will be coated with second layer silicon nitride film is again proceeded deposition; Depositing temperature is 460 ℃; In boiler tube, feeding gas flow is the ammonia of 4100sccm, the silane of 790sccm, and ionization is 90 seconds under the power of 5400W, on second layer silicon nitride film, generates the 3rd layer of silicon nitride film;
The silicon chip that (4) will be coated with the 3rd layer of silicon nitride film is again proceeded deposition; Depositing temperature is 460 ℃; In boiler tube, feeding gas flow is the ammonia of 6600sccm, the silane of 890sccm, and ionization is 270 seconds under the power of 5400W, on the 3rd layer of silicon nitride film, generates the 4th layer of silicon nitride film.
To preparing the antireflective matte through making herbs into wool; Diffusion preparation PN junction; Etching is removed the PN junction around the crystal silicon chip, and the polycrystal silicon chip that cleaning and removing is removed behind the treatment step of phosphorosilicate glass uses tubular type PECVD filming equipment to carry out the preparation of N type surface four tunics, and it may further comprise the steps:
(1) silicon chip after the etching is placed in the deposit cavity of tubular type PECVD filming equipment; Depositing temperature is 470 ℃; In boiler tube, feeding gas flow is the ammonia of 3400sccm, the silane of 850sccm, and ionization generated the ground floor silicon nitride film in 150 seconds under the power of 5700W;
The silicon chip that (2) will be coated with the ground floor silicon nitride film is again proceeded deposition; Depositing temperature is 470 ℃; In boiler tube, feeding gas flow is the ammonia of 6700sccm, the silane of 720sccm, and ionization is 270 seconds under the power of 5500W, on the ground floor silicon nitride film, generates second layer silicon nitride film;
The silicon chip that (3) will be coated with second layer silicon nitride film is again proceeded deposition; Depositing temperature is 470 ℃; In boiler tube, feeding gas flow is the ammonia of 4200sccm, the silane of 800sccm, and ionization is 100 seconds under the power of 5500W, on second layer silicon nitride film, generates the 3rd layer of silicon nitride film;
The silicon chip that (4) will be coated with the 3rd layer of silicon nitride film is again proceeded deposition; Depositing temperature is 470 ℃; In boiler tube, feeding gas flow is the ammonia of 6700sccm, the silane of 900sccm, and ionization is 290 seconds under the power of 5500W, on the 3rd layer of silicon nitride film, generates the 4th layer of silicon nitride film.
To preparing the antireflective matte through making herbs into wool; Diffusion preparation PN junction; Etching is removed the PN junction around the crystal silicon chip, and the polycrystal silicon chip that cleaning and removing is removed behind the treatment step of phosphorosilicate glass uses tubular type PECVD filming equipment to carry out the preparation of N type surface four tunics, and it may further comprise the steps:
(1) silicon chip after the etching is placed in the deposit cavity of tubular type PECVD filming equipment; Depositing temperature is 455 ℃; In boiler tube, feeding gas flow is the ammonia of 3500sccm, the silane of 840sccm, and ionization generated the ground floor silicon nitride film in 110 seconds under the power of 5500W;
The silicon chip that (2) will be coated with the ground floor silicon nitride film is again proceeded deposition; Depositing temperature is 455 ℃; In boiler tube, feeding gas flow is the ammonia of 6800sccm, the silane of 730sccm, and ionization is 280 seconds under the power of 5600W, on the ground floor silicon nitride film, generates second layer silicon nitride film;
The silicon chip that (3) will be coated with second layer silicon nitride film is again proceeded deposition; Depositing temperature is 455 ℃; In boiler tube, feeding gas flow is the ammonia of 4300sccm, the silane of 785sccm, and ionization is 85 seconds under the power of 5600W, on second layer silicon nitride film, generates the 3rd layer of silicon nitride film;
The silicon chip that (4) will be coated with the 3rd layer of silicon nitride film is again proceeded deposition; Depositing temperature is 455 ℃; In boiler tube, feeding gas flow is the ammonia of 6800sccm, the silane of 885sccm, and ionization is 290 seconds under the power of 5600W, on the 3rd layer of silicon nitride film, generates the 4th layer of silicon nitride film.
To preparing the antireflective matte through making herbs into wool; Diffusion preparation PN junction; Etching is removed the PN junction around the crystal silicon chip, and the polycrystal silicon chip that cleaning and removing is removed behind the treatment step of phosphorosilicate glass uses tubular type PECVD filming equipment to carry out the preparation of N type surface four tunics, and it may further comprise the steps:
(1) the raw material silicon chip is placed in the deposit cavity of tubular type PECVD filming equipment; Depositing temperature is 465 ℃; In boiler tube, feeding gas flow is the ammonia of 3100sccm, the silane of 820sccm, and ionization generated the ground floor silicon nitride film in 120 seconds under the power of 5400W;
The raw material silicon chip that (2) will be coated with the ground floor silicon nitride film is again proceeded deposition; Depositing temperature is 465 ℃; In boiler tube, feeding gas flow is the ammonia of 6900sccm, the silane of 715sccm; Ionization is 290 seconds under the power of 5700W, on the ground floor silicon nitride film, generates second layer silicon nitride film;
The raw material silicon chip that (3) will be coated with second layer silicon nitride film is again proceeded deposition; Depositing temperature is 465 ℃; In boiler tube, feeding gas flow is the ammonia of 4400sccm, the silane of 795sccm; Ionization is 95 seconds under the power of 5700W, on second layer silicon nitride film, generates the 3rd layer of silicon nitride film;
The raw material silicon chip that (4) will be coated with the 3rd layer of silicon nitride film is again proceeded deposition; Depositing temperature is 465 ℃; In boiler tube, feeding gas flow is the ammonia of 6550sccm, the silane of 895sccm; Ionization is 300 seconds under the power of 5700W, on the 3rd layer of silicon nitride film, generates the 4th layer of silicon nitride film.
To preparing the antireflective matte through making herbs into wool; Diffusion preparation PN junction; Etching is removed the PN junction around the crystal silicon chip, and the polycrystal silicon chip that cleaning and removing is removed behind the treatment step of phosphorosilicate glass uses tubular type PECVD filming equipment to carry out the preparation of N type surface four tunics, and it may further comprise the steps:
(1) silicon chip after the etching is placed in the deposit cavity of tubular type PECVD filming equipment; Depositing temperature is 462.5 ℃; In boiler tube, feeding gas flow is the ammonia of 3300sccm, the silane of 810sccm, and ionization generated the ground floor silicon nitride film in 130 seconds under the power of 5450W;
The silicon chip that (2) will be coated with the ground floor silicon nitride film is again proceeded deposition; Depositing temperature is 462.5 ℃; In boiler tube, feeding gas flow is the ammonia of 7000sccm, the silane of 725sccm; Ionization is 300 seconds under the power of 5450W, on the ground floor silicon nitride film, generates second layer silicon nitride film;
The silicon chip that (3) will be coated with second layer silicon nitride film is again proceeded deposition; Depositing temperature is 462.5 ℃; In boiler tube, feeding gas flow is the ammonia of 4500sccm, the silane of 787.5sccm; Ionization is 93 seconds under the power of 5500W, on second layer silicon nitride film, generates the 3rd layer of silicon nitride film;
The silicon chip that (4) will be coated with the 3rd layer of silicon nitride film is again proceeded deposition; Depositing temperature is 462.5 ℃; In boiler tube, feeding gas flow is the ammonia of 6650sccm, the silane of 887.5sccm; Ionization is 285 seconds under the power of 5500W, on the 3rd layer of silicon nitride film, generates the 4th layer of silicon nitride film.
Claims (2)
1. four layers of antireflective coating of a crystal silicon solar energy battery, it is characterized in that: it is to be made up of four tunics, and ground floor is the ground floor silicon nitride film of solar cell surface of crystalline silicon, and thickness is 10～15nm, and refractive index is 2.2～2.4; The second layer is a second layer silicon nitride film, and thickness is 30～35nm, and refractive index is 1.95～2.05; The 3rd layer is the 3rd layer of silicon nitride film, and thickness is 8～10nm, and refractive index is 2.3-2.4; The 4th layer is the 4th layer of silicon nitride film, and thickness is 30～35nm, and refractive index is 2.1-2.15.
2. the preparation method of four layers of antireflective coating of the described crystal silicon solar energy battery of claim 1; It is characterized in that: it is to preparing the antireflective matte through making herbs into wool; Diffusion preparation PN junction; Etching is removed the PN junction around the crystal silicon chip, and the crystal silicon chip that cleaning and removing is removed behind the treatment step of phosphorosilicate glass uses tubular type PECVD filming equipment to carry out the preparation of N type surface four tunics, and it may further comprise the steps:
(1) silicon chip after the etching is placed in the deposit cavity of tubular type PECVD filming equipment; Depositing temperature is 450 ℃-470 ℃; In boiler tube, feeding gas flow is the ammonia of 3000-3500sccm, the silane of 800-850sccm; To generate thickness second be 10～15nm to ionization 90-150 under the power of 5300-5700W, and refractive index is 2.2～2.4 ground floor silicon nitride film;
The silicon chip that (2) will be coated with the ground floor silicon nitride film is again proceeded deposition; Depositing temperature is 450 ℃-470 ℃; In boiler tube, feeding gas flow is the ammonia of 6500-7000sccm, the silane of 700-730sccm; Ionization 250-300 second under the power of 5300-5700W, on the ground floor silicon nitride film, generating thickness is 30～35nm, and refractive index is 1.95～2.05 second layer silicon nitride film;
The silicon chip that (3) will be coated with second layer silicon nitride film is again proceeded deposition; Depositing temperature is 450 ℃-470 ℃; In boiler tube, feeding gas flow is the ammonia of 4000-4500sccm, the silane of 780-800sccm; Ionization 80-100 second under the power of 5300-5700W, on second layer silicon nitride film, generating thickness is 8～10nm, and refractive index is the 3rd layer of silicon nitride film of 2.3-2.4;
The silicon chip that (4) will be coated with the 3rd layer of silicon nitride film is again proceeded deposition; Depositing temperature is 450 ℃-470 ℃; In boiler tube, feeding gas flow is the ammonia of 6500-6800sccm, the silane of 880-900sccm; Ionization 260-300 second under the power of 5300-5700W, on the 3rd layer of silicon nitride film, generating thickness is 30～35nm, and refractive index is the 4th layer of silicon nitride film of 2.1-2.15.
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Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102623572A (en) * | 2012-04-13 | 2012-08-01 | 英利能源（中国）有限公司 | Method for producing deposition anti-reflection film of crystalline silicon solar cell |
| CN102820342A (en) * | 2012-08-16 | 2012-12-12 | 英利能源（中国）有限公司 | Silicon nitride film, preparation method, silicon wafer containing silicon nitride film and solar battery |
| CN103022248A (en) * | 2012-11-27 | 2013-04-03 | 东方日升新能源股份有限公司 | Photovoltaic cell with three layers of antireflective films in composite structures and composite coating method thereof |
| CN104332505A (en) * | 2014-12-01 | 2015-02-04 | 九州方园新能源股份有限公司 | Crystalline silicon solar cell silicon nitride antireflection film and preparation method thereof |
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| CN102623572A (en) * | 2012-04-13 | 2012-08-01 | 英利能源（中国）有限公司 | Method for producing deposition anti-reflection film of crystalline silicon solar cell |
| CN102820342A (en) * | 2012-08-16 | 2012-12-12 | 英利能源（中国）有限公司 | Silicon nitride film, preparation method, silicon wafer containing silicon nitride film and solar battery |
| CN103022248A (en) * | 2012-11-27 | 2013-04-03 | 东方日升新能源股份有限公司 | Photovoltaic cell with three layers of antireflective films in composite structures and composite coating method thereof |
| CN103022248B (en) * | 2012-11-27 | 2015-05-06 | 东方日升新能源股份有限公司 | Composite coating method for photovoltaic cell with three layers of antireflective films in composite structures |
| CN104332505A (en) * | 2014-12-01 | 2015-02-04 | 九州方园新能源股份有限公司 | Crystalline silicon solar cell silicon nitride antireflection film and preparation method thereof |
| CN106449784A (en) * | 2016-11-08 | 2017-02-22 | 徐州鑫宇光伏科技有限公司 | Solar battery antireflection film, preparation method thereof and solar battery piece |
| CN108110066B (en) * | 2018-02-05 | 2020-03-17 | 通威太阳能（安徽）有限公司 | Front film layer structure for improving conversion efficiency of PERC battery and preparation method |
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| CN110021682A (en) * | 2019-02-18 | 2019-07-16 | 浙江贝盛光伏股份有限公司 | A kind of passivation process suitable for solar battery sheet |
| CN111029415A (en) * | 2019-12-31 | 2020-04-17 | 广东爱旭科技有限公司 | Front-side composite film for improving chromatic aberration around the edge of tubular PERC solar cells |
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Application publication date: 20120222 |