CN106409926A - Multilayer passivation film of crystalline-silicon battery and manufacturing method thereof - Google Patents
Multilayer passivation film of crystalline-silicon battery and manufacturing method thereof Download PDFInfo
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- 238000002161 passivation Methods 0.000 title claims abstract description 27
- 229910021419 crystalline silicon Inorganic materials 0.000 title claims abstract description 21
- 238000004519 manufacturing process Methods 0.000 title claims description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 72
- 229910052814 silicon oxide Inorganic materials 0.000 claims abstract description 66
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 58
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 58
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 20
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 20
- 239000010703 silicon Substances 0.000 claims abstract description 20
- 238000002360 preparation method Methods 0.000 claims abstract description 6
- 238000000034 method Methods 0.000 claims description 32
- GQPLMRYTRLFLPF-UHFFFAOYSA-N Nitrous Oxide Chemical compound [O-][N+]#N GQPLMRYTRLFLPF-UHFFFAOYSA-N 0.000 claims description 18
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 15
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 12
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 12
- 229910000077 silane Inorganic materials 0.000 claims description 12
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 6
- 229910052757 nitrogen Inorganic materials 0.000 claims description 6
- 239000001272 nitrous oxide Substances 0.000 claims description 5
- 235000013842 nitrous oxide Nutrition 0.000 claims description 4
- 229910021529 ammonia Inorganic materials 0.000 claims description 3
- 230000003647 oxidation Effects 0.000 claims description 3
- 238000007254 oxidation reaction Methods 0.000 claims description 3
- 235000012239 silicon dioxide Nutrition 0.000 claims description 3
- 239000000377 silicon dioxide Substances 0.000 claims description 3
- 239000000969 carrier Substances 0.000 abstract description 4
- 239000010408 film Substances 0.000 description 100
- 235000012431 wafers Nutrition 0.000 description 5
- 229910004205 SiNX Inorganic materials 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 4
- 238000000151 deposition Methods 0.000 description 3
- 230000006798 recombination Effects 0.000 description 3
- 238000005215 recombination Methods 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000002834 transmittance Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008033 biological extinction Effects 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
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- H—ELECTRICITY
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- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/30—Coatings
- H10F77/306—Coatings for devices having potential barriers
- H10F77/311—Coatings for devices having potential barriers for photovoltaic cells
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- H—ELECTRICITY
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- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F10/00—Individual photovoltaic cells, e.g. solar cells
- H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
- H10F10/14—Photovoltaic cells having only PN homojunction potential barriers
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F71/00—Manufacture or treatment of devices covered by this subclass
- H10F71/129—Passivating
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/30—Coatings
- H10F77/306—Coatings for devices having potential barriers
- H10F77/311—Coatings for devices having potential barriers for photovoltaic cells
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- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
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Abstract
本发明公开了一种晶硅电池多层钝化膜及其制备方法；晶硅电池多层钝化膜，包括第一氧化硅膜、氮化硅膜、第二氧化硅膜以及氮氧化硅膜；氮化硅膜沉积在第一氧化硅膜上；第二氧化硅膜沉积在氮化硅膜上，氮氧化硅膜沉积在第二氧化硅膜上；第一氧化硅膜厚度为5‑9nm，氮化硅膜厚度为60‑90nm，第二氧化硅膜的厚度为10‑20nm，氮氧化硅膜的厚度为15‑30nm。本发明光线发生全反射的概率大幅度地提高，即有更多的光线进入硅片内，可以产生更多的载流子，提高电池效率。
The invention discloses a multilayer passivation film for a crystalline silicon battery and a preparation method thereof; the multilayer passivation film for a crystalline silicon battery comprises a first silicon oxide film, a silicon nitride film, a second silicon oxide film and a silicon nitride oxide film The silicon nitride film is deposited on the first silicon oxide film; the second silicon oxide film is deposited on the silicon nitride film, and the silicon nitride oxide film is deposited on the second silicon oxide film; the thickness of the first silicon oxide film is 5-9nm , the thickness of the silicon nitride film is 60-90nm, the thickness of the second silicon oxide film is 10-20nm, and the thickness of the silicon nitride oxide film is 15-30nm. In the invention, the probability of total reflection of light is greatly improved, that is, more light enters the silicon chip, more carriers can be generated, and the battery efficiency is improved.
Description
技术领域technical field
本发明涉及太阳能电池的技术领域，特别是涉及一种晶硅电池多层钝化膜及其制造方法。The invention relates to the technical field of solar cells, in particular to a multilayer passivation film for crystalline silicon cells and a manufacturing method thereof.
背景技术Background technique
目前，在太阳能电池大规模生产中常采用在硅片表面沉积减反射膜的方式增加光的利用率，提升电池转换效率。常见的薄膜主要有氮化硅SiNx和氧化硅SiOx，两种薄膜具有不同的特性和制备方法。氮化硅SiNx薄膜多采用PECVD沉积的方式进行制备，具有减反射性能和体钝化效果好、沉积温度低，产能高等特点，但氮化硅膜与硅基体结合界面态高和消光特性也限制了电池转化效率的进一步提升。相比较于SiNx，氧化硅SiOx薄膜具有更低的界面态、更低的折射率，可以提供良好的表面钝化效果，但其制备方法多采用高温热氧化方法进行生长，对硅片损伤较大，且流程复杂成本较高，不利于大规模生产。At present, in the mass production of solar cells, anti-reflection coatings are often deposited on the surface of silicon wafers to increase light utilization and improve cell conversion efficiency. Common thin films mainly include silicon nitride SiNx and silicon oxide SiOx, and the two thin films have different characteristics and preparation methods. Silicon nitride SiNx films are mostly prepared by PECVD deposition, which has the characteristics of good anti-reflection performance, good bulk passivation effect, low deposition temperature, and high productivity, but the high bonding interface state and extinction characteristics of silicon nitride film and silicon substrate are also limited. The further improvement of the battery conversion efficiency. Compared with SiNx, silicon oxide SiOx film has a lower interface state and lower refractive index, which can provide a good surface passivation effect, but its preparation method is mostly grown by high-temperature thermal oxidation method, which causes great damage to the silicon wafer , and the process is complicated and costly, which is not conducive to mass production.
另外，常规电池片的抗PID特性通过增加SiNx薄膜的折射率来提高，此方法会带来一定程度的效率损失，而在底层沉积SiOx薄膜，在提高抗PID特性的同时不会导致效率降低。In addition, the anti-PID characteristics of conventional solar cells are improved by increasing the refractive index of the SiNx film. This method will bring a certain degree of efficiency loss, but depositing a SiOx film on the bottom layer will not reduce the efficiency while improving the anti-PID characteristics.
发明内容Contents of the invention
发明目的：本发明的目的是提供一种晶硅电池多层钝化膜及其制备方法。Purpose of the invention: The purpose of the invention is to provide a multilayer passivation film for a crystalline silicon battery and a preparation method thereof.
技术方案：为实现上述目的，本发明提供了一种晶硅电池多层钝化膜，包括第一氧化硅膜、氮化硅膜、第二氧化硅膜以及氮氧化硅膜；氮化硅膜沉积在第一氧化硅膜上；第二氧化硅膜沉积在氮化硅膜上，氮氧化硅膜沉积在第二氧化硅膜上；第一氧化硅膜厚度为5-9nm，氮化硅膜厚度为60-90nm，第二氧化硅膜的厚度为10-20nm，氮氧化硅膜的厚,度为15-30nm。Technical solution: In order to achieve the above purpose, the present invention provides a multilayer passivation film for crystalline silicon cells, including a first silicon oxide film, a silicon nitride film, a second silicon oxide film, and a silicon nitride oxide film; the silicon nitride film Deposited on the first silicon oxide film; the second silicon oxide film is deposited on the silicon nitride film, and the silicon nitride oxide film is deposited on the second silicon oxide film; the thickness of the first silicon oxide film is 5-9nm, and the silicon nitride film The thickness is 60-90nm, the thickness of the second silicon oxide film is 10-20nm, and the thickness of the silicon oxynitride film is 15-30nm.
工作原理：本发明晶硅电池多层钝化膜通过钝化和减反射两方面来提高电池效率。钝化是减少硅片表面和内部的缺陷，用以减少附加能级的引入，减少少子复合，提高少子寿命，提高电池效率；减反射是通过薄膜的干涉原理来降低光的反射，可以使硅片吸收更多的光，更多的光将会产生更多的光生载流子，提高电池效率。Working principle: The multilayer passivation film of the crystalline silicon battery of the present invention improves battery efficiency through passivation and anti-reflection. Passivation is to reduce the surface and internal defects of silicon wafers to reduce the introduction of additional energy levels, reduce minority carrier recombination, improve minority carrier life, and improve battery efficiency; anti-reflection is to reduce light reflection through the interference principle of thin films, which can make silicon The sheet absorbs more light, and more light will generate more photogenerated carriers, improving cell efficiency.
作为优选，第一氧化硅膜厚度为6-8nm，氮化硅膜的厚度为70-80nm，第二氧化硅膜的厚度为12-18nm，氮氧化硅膜的厚度为20-25nm。Preferably, the thickness of the first silicon oxide film is 6-8nm, the thickness of the silicon nitride film is 70-80nm, the thickness of the second silicon oxide film is 12-18nm, and the thickness of the silicon nitride oxide film is 20-25nm.
作为优选，第一氧化硅膜的折射率为1.2-1.5，氮化硅膜的折射率为2.0-2.2，第二氧化硅膜的折射率为1.2-1.5，氮氧化硅膜的折射率为1.7-1.8。Preferably, the refractive index of the first silicon oxide film is 1.2-1.5, the refractive index of the silicon nitride film is 2.0-2.2, the refractive index of the second silicon oxide film is 1.2-1.5, and the refractive index of the silicon nitride oxide film is 1.7 -1.8.
上述晶硅电池多层钝化膜的制备方法，包括顺序相接的如下步骤：The preparation method of the multilayer passivation film of the above-mentioned crystalline silicon battery comprises the following steps connected in sequence:
A、采用热氧化法或PECVD法制作第一氧化硅膜；A, adopt thermal oxidation method or PECVD method to make the first silicon oxide film;
B、使用PECVD法在第一层氧化硅膜上制作氮化硅膜；B, using the PECVD method to make a silicon nitride film on the first layer of silicon oxide film;
C、使用PECVD法在氮化硅膜上制作第二氧化硅膜；C, using the PECVD method to make a second silicon oxide film on the silicon nitride film;
D、使用PECVD法在第二氧化硅膜上制作氮氧化硅膜，以完成晶硅电池多层钝化膜的制作。D. Fabricate a silicon oxynitride film on the second silicon oxide film by PECVD to complete the fabrication of a multilayer passivation film for the crystalline silicon cell.
作为优选，步骤A中，第一氧化硅膜使用PECVD法制作，工艺条件为：温度350-380℃，笑气流量3-7L/min，硅烷流量2-4L/min，压力2-2.5Torr，射频功率5-7kW，持续时间5-12s。Preferably, in step A, the first silicon oxide film is produced by PECVD, and the process conditions are as follows: temperature 350-380°C, nitrous oxide flow rate 3-7L/min, silane flow rate 2-4L/min, pressure 2-2.5Torr, RF power 5-7kW, duration 5-12s.
作为优选，步骤B中，氮化硅膜的工艺条件为：温度420-550℃，氮气流量20-35L/min，氨气流量0.6-1.2L/min，硅烷流量2.5-4L/min，压力2-2.5Torr，射频功率8-10kW，持续时间35-55s。Preferably, in step B, the process conditions of the silicon nitride film are: temperature 420-550°C, nitrogen flow rate 20-35L/min, ammonia flow rate 0.6-1.2L/min, silane flow rate 2.5-4L/min, pressure 2 -2.5Torr, RF power 8-10kW, duration 35-55s.
作为优选，步骤C中，第二氧化硅膜的工艺条件为：温度350-380℃，笑气流量3-7L/min，硅烷流量2-4L/min，压力2-2.5Torr，射频功率5-7kW，持续时间20-40s。Preferably, in step C, the process conditions of the second silicon oxide film are as follows: temperature 350-380°C, nitrous oxide flow rate 3-7L/min, silane flow rate 2-4L/min, pressure 2-2.5Torr, radio frequency power 5- 7kW, duration 20-40s.
作为优选，步骤D中，氮氧化硅膜的工艺条件为：温度400-480℃，氮气流量18-35L/min，笑气流量3-7L/min，硅烷流量2-4L/min，压力2-2.5Torr，射频功率5-7kW，持续时间20-40s。Preferably, in step D, the process conditions of the silicon oxynitride film are: temperature 400-480°C, nitrogen flow rate 18-35L/min, laughing gas flow rate 3-7L/min, silane flow rate 2-4L/min, pressure 2- 2.5Torr, RF power 5-7kW, duration 20-40s.
有益效果：本发明晶硅电池多层钝化膜中第一层氧化硅膜代替传统的高折射率氮化硅膜，其一氧化硅薄膜可有效减少硅片表面态密度，提升短波响应，降低表面复合速率；其二氧化硅薄膜的相对介电常数更低，绝缘性能佳，抗PID效果好；其三氧化硅薄膜折射率更低，光透性更好。本发明中第二层氮化硅膜富含固定正电荷和氢元素，可以提供有效的场钝化和体钝化。本发明中第三层氧化硅膜，其一光透性好，其二与第二层氮化硅膜叠加，由于其折射率远低于第二层氮化硅膜，故光线发生全反射的概率将有很大提高，即有更多的光线进入硅片内，可以产生更多的载流子，提高电池效率。Beneficial effects: the first silicon oxide film in the multilayer passivation film of the crystalline silicon cell of the present invention replaces the traditional high-refractive-index silicon nitride film, and its silicon monoxide film can effectively reduce the surface state density of the silicon wafer, improve short-wave response, and reduce Surface recombination rate; the relative dielectric constant of the silicon dioxide film is lower, the insulation performance is good, and the anti-PID effect is good; the refractive index of the silicon trioxide film is lower, and the light transmission is better. In the present invention, the second layer of silicon nitride film is rich in fixed positive charges and hydrogen elements, which can provide effective field passivation and bulk passivation. In the present invention, the third layer of silicon oxide film has good light transmittance, and its second layer is superposed with the second layer of silicon nitride film. Since its refractive index is much lower than that of the second layer of silicon nitride film, the total reflection of light occurs. The probability will be greatly improved, that is, more light enters the silicon chip, which can generate more carriers and improve the efficiency of the cell.
附图说明Description of drawings
图1是本发明的晶硅电池多层钝化膜结构示意图。Fig. 1 is a schematic diagram of the multilayer passivation film structure of a crystalline silicon cell according to the present invention.
具体实施方式detailed description
下面结合附图和具体实施例，进一步阐明本发明，本实施例在以本发明技术方案为前提下进行实施，应理解这些实施例仅用于说明本发明而不用于限制本发明的范围。The present invention will be further illustrated below in conjunction with the accompanying drawings and specific embodiments. This embodiment is implemented on the premise of the technical solution of the present invention. It should be understood that these embodiments are only used to illustrate the present invention and are not intended to limit the scope of the present invention.
如图1所示的一种晶硅电池多层钝化膜，所述晶硅电池多层钝化膜形成在P型晶硅电池1上，其包括第一氧化硅膜2、氮化硅膜3、第二氧化硅膜4以及氮氧化硅膜5；氮化硅3膜沉积在第一氧化硅膜2上；第二氧化硅膜4沉积在氮化硅膜3上，氮氧化硅膜5沉积在第二氧化硅膜4上；第一氧化硅膜2厚度为5-9nm，氮化硅膜3厚度为60-90nm，第二氧化硅膜4的厚度为10-20nm，氮氧化硅膜5的厚度为15-30nm。其中，作为优选，第一氧化硅膜2厚度为6-8nm，氮化硅膜3的厚度为70-80nm，第二氧化硅膜4的厚度为12-18nm，氮氧化硅膜5的厚度为20-25nm，第一氧化硅膜2的折射率为1.2-1.5，氮化硅膜3的折射率为2.0-2.2，第二氧化硅膜4的折射率为1.2-1.5，氮氧化硅膜5的折射率为1.7-1.8。A multilayer passivation film for a crystalline silicon battery as shown in Figure 1, the multilayer passivation film for a crystalline silicon battery is formed on a P-type crystalline silicon battery 1, which includes a first silicon oxide film 2, a silicon nitride film 3. The second silicon oxide film 4 and the silicon nitride oxide film 5; the silicon nitride film 3 is deposited on the first silicon oxide film 2; the second silicon oxide film 4 is deposited on the silicon nitride film 3, and the silicon nitride oxide film 5 Deposited on the second silicon oxide film 4; the thickness of the first silicon oxide film 2 is 5-9nm, the thickness of the silicon nitride film 3 is 60-90nm, the thickness of the second silicon oxide film 4 is 10-20nm, and the silicon nitride oxide film 5 has a thickness of 15-30 nm. Wherein, preferably, the thickness of the first silicon oxide film 2 is 6-8 nm, the thickness of the silicon nitride film 3 is 70-80 nm, the thickness of the second silicon oxide film 4 is 12-18 nm, and the thickness of the silicon nitride oxide film 5 is 20-25nm, the refractive index of the first silicon oxide film 2 is 1.2-1.5, the refractive index of the silicon nitride film 3 is 2.0-2.2, the refractive index of the second silicon oxide film 4 is 1.2-1.5, and the silicon nitride oxide film 5 The refractive index is 1.7-1.8.
其制作方法如下：将P型晶硅电池1依次经过下述常规工序：一次清洗、扩散和二次清洗，使用PECVD法制作第一层氧化硅膜，工艺条件为：第一氧化硅膜使用PECVD法制作，工艺条件为：温度350-380℃，笑气流量3-7L/min，硅烷流量2-4L/min，压力2-2.5Torr，射频功率5-7kW，持续时间5-12s，得到厚度为6-8nm，折射率为1.2-1.5的第一氧化硅膜2；然后使用PECVD法在第一氧化硅膜2上制作第二层氮化硅膜3，工艺条件为：温度420-550℃，氮气流量20-35L/min，氨气流量0.6-1.2L/min，硅烷流量2.5-4L/min，压力2-2.5Torr，射频功率8-10kW，持续时间35-55s，得到为70-80nm，折射率为2.0-2.2的氮化硅膜3，再使用PECVD法在氮化硅膜3制作第三层第二氧化硅膜4，工艺条件为：温度350-380℃，笑气流量3-7L/min，硅烷流量2-4L/min，压力2-2.5Torr，射频功率5-7kW，持续时间20-40s，得到厚度为12-18nm，折射率为1.2-1.5的第二氧化硅膜4，再使用PECVD法在第二氧化硅膜4制作第四层氮氧化硅膜4，工艺条件为：温度400-480℃，氮气流量18-35L/min，笑气流量3-7L/min，硅烷流量2-4L/min，压力2-2.5Torr，射频功率5-7kW，持续时间20-40s，得到厚度为20-25nm，折射率为1.7-1.8的氮氧化硅膜4。The production method is as follows: the P-type crystalline silicon cell 1 is sequentially subjected to the following conventional procedures: primary cleaning, diffusion and secondary cleaning, and the first layer of silicon oxide film is produced by PECVD. Production method, the process conditions are: temperature 350-380 ℃, nitrous oxide flow rate 3-7L/min, silane flow rate 2-4L/min, pressure 2-2.5Torr, radio frequency power 5-7kW, duration 5-12s, get the thickness A first silicon oxide film 2 with a refractive index of 6-8nm and a refractive index of 1.2-1.5; then a second layer of silicon nitride film 3 is formed on the first silicon oxide film 2 by PECVD method, and the process conditions are: temperature 420-550°C , nitrogen flow rate 20-35L/min, ammonia flow rate 0.6-1.2L/min, silane flow rate 2.5-4L/min, pressure 2-2.5Torr, radio frequency power 8-10kW, duration 35-55s, obtained as 70-80nm , a silicon nitride film 3 with a refractive index of 2.0-2.2, and then use the PECVD method to form a third layer of second silicon oxide film 4 on the silicon nitride film 3. The process conditions are: temperature 350-380 ° C, laughing gas flow rate 3- 7L/min, silane flow rate 2-4L/min, pressure 2-2.5Torr, RF power 5-7kW, duration 20-40s, to obtain a second silicon oxide film 4 with a thickness of 12-18nm and a refractive index of 1.2-1.5 , and then use the PECVD method to make the fourth layer of silicon nitride oxide film 4 on the second silicon oxide film 4, the process conditions are: temperature 400-480 ° C, nitrogen flow rate 18-35L/min, laughing gas flow rate 3-7L/min, silane The flow rate is 2-4L/min, the pressure is 2-2.5Torr, the radio frequency power is 5-7kW, and the duration is 20-40s to obtain a silicon nitride oxide film 4 with a thickness of 20-25nm and a refractive index of 1.7-1.8.
本发明晶硅电池多层钝化膜中第一层氧化硅膜代替传统的高折射率氮化硅膜，其一氧化硅薄膜可有效减少硅片表面态密度，提升短波响应，降低表面复合速率；其二氧化硅薄膜的相对介电常数更低，绝缘性能佳，抗PID效果好；其三氧化硅薄膜折射率更低，光透性更好。本发明中第二层氮化硅膜富含固定正电荷和氢元素，可以提供有效的场钝化和体钝化。本发明中第三层氧化硅膜，其一光透性好，其二与第二层氮化硅膜叠加，由于其折射率远低于第二层氮化硅膜，故光线发生全反射的概率将有很大提高，即有更多的光线进入硅片内，可以产生更多的载流子，提高电池效率。The first silicon oxide film in the multilayer passivation film of the crystalline silicon cell of the present invention replaces the traditional high-refractive-index silicon nitride film, and its silicon monoxide film can effectively reduce the surface state density of the silicon wafer, improve the short-wave response, and reduce the surface recombination rate ; The relative dielectric constant of the silicon dioxide film is lower, the insulation performance is good, and the anti-PID effect is good; the refractive index of the silicon trioxide film is lower, and the light transmission is better. In the present invention, the second layer of silicon nitride film is rich in fixed positive charges and hydrogen elements, which can provide effective field passivation and bulk passivation. In the present invention, the third layer of silicon oxide film has good light transmittance, and its second layer is superposed with the second layer of silicon nitride film. Since its refractive index is much lower than that of the second layer of silicon nitride film, the total reflection of light occurs. The probability will be greatly improved, that is, more light enters the silicon chip, which can generate more carriers and improve the efficiency of the cell.
以上所述是本发明的优选实施方式，应当指出，对于本技术领域的普通技术人员来说，在不脱离本发明原理的前提下，还可以做出若干改进和润饰，这些改进和润饰也视为本发明的保护范围。The above description is a preferred embodiment of the present invention, and it should be pointed out that for those skilled in the art, without departing from the principle of the present invention, some improvements and modifications can also be made, and these improvements and modifications are also considered Be the protection scope of the present invention.
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