CN102324414B - Lead frame structure with base island pre-filled molding compound first plated and then engraved and its production method - Google Patents
Lead frame structure with base island pre-filled molding compound first plated and then engraved and its production method Download PDFInfo
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- CN102324414B CN102324414B CN2011102683606A CN201110268360A CN102324414B CN 102324414 B CN102324414 B CN 102324414B CN 2011102683606 A CN2011102683606 A CN 2011102683606A CN 201110268360 A CN201110268360 A CN 201110268360A CN 102324414 B CN102324414 B CN 102324414B
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- metal substrate
- lead frame
- plated
- photoresist film
- pin
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- 150000001875 compounds Chemical class 0.000 title claims description 23
- 238000000465 moulding Methods 0.000 title claims description 14
- 238000004519 manufacturing process Methods 0.000 title claims description 12
- 229910052751 metal Inorganic materials 0.000 claims abstract description 99
- 239000002184 metal Substances 0.000 claims abstract description 99
- 238000005530 etching Methods 0.000 claims abstract description 24
- 239000004033 plastic Substances 0.000 claims abstract description 21
- 239000000463 material Substances 0.000 claims abstract description 12
- 238000000034 method Methods 0.000 claims abstract description 12
- 239000000758 substrate Substances 0.000 claims description 67
- 229920002120 photoresistant polymer Polymers 0.000 claims description 42
- 238000005538 encapsulation Methods 0.000 claims description 16
- 238000002347 injection Methods 0.000 claims description 9
- 239000007924 injection Substances 0.000 claims description 9
- 239000008393 encapsulating agent Substances 0.000 claims description 8
- 238000001465 metallisation Methods 0.000 claims description 3
- 238000010137 moulding (plastic) Methods 0.000 claims description 2
- 239000002313 adhesive film Substances 0.000 abstract description 12
- 238000010586 diagram Methods 0.000 description 5
- 238000012858 packaging process Methods 0.000 description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 238000004806 packaging method and process Methods 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- 229910001030 Iron–nickel alloy Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000032798 delamination Effects 0.000 description 1
- 239000012467 final product Substances 0.000 description 1
- MSNOMDLPLDYDME-UHFFFAOYSA-N gold nickel Chemical compound [Ni].[Au] MSNOMDLPLDYDME-UHFFFAOYSA-N 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- BSIDXUHWUKTRQL-UHFFFAOYSA-N nickel palladium Chemical compound [Ni].[Pd] BSIDXUHWUKTRQL-UHFFFAOYSA-N 0.000 description 1
- 239000005022 packaging material Substances 0.000 description 1
- 239000002985 plastic film Substances 0.000 description 1
- 229920006255 plastic film Polymers 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001256 stainless steel alloy Inorganic materials 0.000 description 1
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Abstract
Description
技术领域 technical field
本发明涉及一种引线框结构及其生产方法,属于半导体封装技术领域。 The invention relates to a lead frame structure and a production method thereof, belonging to the technical field of semiconductor packaging.
背景技术 Background technique
传统的引线框结构主要有两种: There are two main types of traditional lead frame structures:
一种是四面扁平无引脚封装(QFN)引线框,这种结构的引线框为了防止引线框正面包封作业时,引线框的背面会产生塑封料的溢料,故在引线框背面贴附有一层昂贵的高温胶膜(如图14所示),这种引线框结构存在以下缺点: One is the four-sided flat no-lead package (QFN) lead frame. In order to prevent the lead frame from being sealed on the front side of the lead frame, the back of the lead frame will produce overflow of the plastic packaging compound, so the lead frame is attached to the back of the lead frame. With a layer of expensive high-temperature adhesive film (as shown in Figure 14), this leadframe structure has the following disadvantages:
1、金属引线框的底部贴附了一层抗高温胶膜,增加了至少50%的引线框成本; 1. A layer of high temperature resistant adhesive film is attached to the bottom of the metal lead frame, which increases the cost of the lead frame by at least 50%;
2、金属引线框底部贴附的胶膜是软性有机物质,所以在后续的封装过程的装片与金属丝键合作业中,会因为高温烘烤产生了有机物的挥发性污染,会直接污染到芯片正面与引线框正面与金属丝键合的结合性,甚至会影响到芯片正面与引线框正面后续封装过程中导致与塑封料的结合能力失败(俗称分层); 2. The adhesive film attached to the bottom of the metal lead frame is a soft organic substance, so in the subsequent packaging process of chip loading and wire bonding operations, volatile pollution of organic substances will be generated due to high-temperature baking, which will directly pollute The bonding between the front of the chip and the front of the lead frame and the wire bonding will even affect the failure of the bonding ability with the plastic encapsulant during the subsequent packaging process between the front of the chip and the front of the lead frame (commonly known as delamination);
3、因为引线框底部贴附了软性有机胶膜,所以在后续的封装过程中的金属丝键合作业中,其部分键合的力量被软性的有机胶膜给吸收,增加了金属丝键合的难度,造成金属丝键合良率的不稳定,可能产生可靠性问题; 3. Because the soft organic adhesive film is attached to the bottom of the lead frame, part of the bonding force is absorbed by the soft organic adhesive film during the subsequent wire bonding operation in the packaging process, increasing the wire Difficulty in bonding, resulting in instability of wire bonding yield, which may cause reliability problems;
4、因为引线框底部贴附了软性有机胶膜,致使键合作业时金属丝材料也被受限在较为软性且昂贵的金丝,而不能使用硬质且成本低廉的铜质、铝质或其他低成本的金属丝或金属带; 4. Because the soft organic adhesive film is attached to the bottom of the lead frame, the metal wire material is limited to soft and expensive gold wire during bonding, instead of hard and low-cost copper and aluminum. quality or other low-cost wire or strip;
5、因为引线框底部贴附了软性有机胶膜,所以在后续的包封作业时,会因为胶膜与金属引线框发生分离而造成在高压塑封过程中,塑封料渗入管脚或基岛与软性有机胶膜的中间(如图15、图16所示)。 5. Because the soft organic film is attached to the bottom of the lead frame, during the subsequent encapsulation operation, the plastic film will be separated from the metal lead frame, which will cause the plastic encapsulation compound to penetrate into the pin or base island during the high-pressure plastic encapsulation process. Between the soft organic film (as shown in Figure 15 and Figure 16).
另一种双面蚀刻预包封引线框(如图17所示)的设计与制造是采用金属基板先进行背面蚀刻后,再进行背面塑封料的预包封,然后再进行引线框正面引脚的蚀刻与表面电镀。这种引线框结构存在以下缺点: The design and manufacture of another double-sided etching pre-encapsulation lead frame (as shown in Figure 17) is to use the metal substrate to etch the backside first, then perform the pre-encapsulation of the backside plastic encapsulation compound, and then carry out the front-side pins of the leadframe Etching and surface plating. This lead frame structure has the following disadvantages:
1、引线框的制作程序太过复杂,造成引线框成本增加; 1. The production process of the lead frame is too complicated, resulting in an increase in the cost of the lead frame;
2、引线框的蚀刻分成上下面各蚀刻一次,容易因为上下蚀刻位置的重复定位误差,造成错位。 2. The etching of the lead frame is divided into upper and lower etching once, which is easy to cause misalignment due to repeated positioning errors of the upper and lower etching positions.
发明内容 Contents of the invention
本发明的目的在于克服上述不足,提供一种有基岛预填塑封料先镀后刻引线框结构及其生产方法,它省去了背面的耐高温胶膜,解决了因软性胶膜所带来的缺点,并同时的降低了封装材料、制程与生产效率等的成本,相对的提高了封装过程的可靠性,而且生产工艺步骤简单、成本低。 The object of the present invention is to overcome above-mentioned deficiency, provide a kind of lead frame structure and its production method that have base island pre-filled molding compound to be plated first and engrave after, and it has saved the high temperature resistant adhesive film on the back side, has solved the problem caused by the soft adhesive film. The disadvantages brought about, and at the same time reduce the cost of packaging materials, manufacturing process and production efficiency, relatively improve the reliability of the packaging process, and the production process steps are simple and low cost.
本发明的目的是这样实现的:一种有基岛预填塑封料先镀后刻引线框结构,它包括基岛和引脚,所述基岛和引脚正面镀有第一金属层,基岛和引脚背面镀有第二金属层,所述基岛与引脚之间以及引脚与引脚之间的蚀刻区域均填充有塑封料,所述塑封料与第一金属层和第二金属层齐平。 The object of the present invention is achieved like this: a kind of lead frame structure that has base island pre-filled molding compound to be plated first and then engraved, it comprises base island and pin, and described base island and pin front face are coated with the first metal layer, base The back of the island and the pin is plated with a second metal layer, and the etched area between the base island and the pin and between the pin and the pin is filled with a molding compound, and the molding compound is combined with the first metal layer and the second metal layer. The metal layers are flush.
本发明有基岛预填塑封料先镀后刻引线框的生产方法,所述方法包括以下工艺步骤: The present invention has the production method of base island pre-filling molding compound first plated and then engraved lead frame, described method comprises the following process steps:
步骤一、取金属基板
步骤二、贴膜作业
利用贴膜设备在金属基板的正面及背面分别贴上可进行曝光显影的光刻胶膜, The photoresist film that can be exposed and developed is respectively pasted on the front and back of the metal substrate by using the film sticking equipment.
步骤三、金属基板正面及背面去除部分光刻胶膜 Step 3. Remove part of the photoresist film on the front and back of the metal substrate
利用曝光显影设备将步骤二完成贴膜作业的金属基板正面及背面进行曝光、显影与去除部分光刻胶膜,以露出金属基板上后续需要进行电镀的区域,
Use exposure and development equipment to expose, develop and remove part of the photoresist film on the front and back of the metal substrate that has completed the film attachment operation in
步骤四、镀金属层
在步骤三中金属基板正面去除部分光刻胶膜的区域镀上第一金属层,在步骤三中金属基板背面去除部分光刻胶膜的区域镀上第二金属层, In step 3, the first metal layer is plated on the area where part of the photoresist film is removed from the front of the metal substrate, and the second metal layer is plated on the area where part of the photoresist film is removed from the back of the metal substrate in step 3,
步骤五、金属基板正面及背面揭膜作业 Step 5, peeling off the front and back of the metal substrate
将金属基板正面及背面余下的光刻胶膜揭除, Remove the remaining photoresist film on the front and back of the metal substrate,
步骤六、贴膜作业
利用贴膜设备在步骤五揭除光刻胶膜后的金属基板正面及背面再次分别贴上可进行曝光显影的光刻胶膜, Use the film sticking equipment to paste the photoresist film that can be exposed and developed again on the front and back of the metal substrate after the photoresist film is removed in step 5,
步骤七、金属基板正面及背面去除部分光刻胶膜 Step 7. Remove part of the photoresist film on the front and back of the metal substrate
利用曝光显影设备将步骤六完成贴膜作业的金属基板正面及背面进行曝光、显影与去除部分光刻胶膜,以露出金属基板上后续需要进行蚀刻的区域,
Use the exposure and development equipment to expose, develop and remove part of the photoresist film on the front and back of the metal substrate that has completed the film attachment operation in
步骤八、金属基板正面及背面进行全蚀刻或半蚀刻 Step 8. Full etching or half etching on the front and back of the metal substrate
对步骤七中金属基板正面及背面去除部分光刻胶膜的区域同时进行全蚀刻或半蚀刻,在金属基板正面及背面形成凹陷的蚀刻区域,同时相对形成基岛和引脚, Perform full etching or half etching on the front and back of the metal substrate where part of the photoresist film is removed in step 7, form a recessed etching area on the front and back of the metal substrate, and form base islands and pins relatively at the same time,
步骤九、金属基板正面及背面揭膜作业 Step 9. The front and back of the metal substrate are peeled off
将金属基板正面及背面余下的光刻胶膜揭除, Remove the remaining photoresist film on the front and back of the metal substrate,
步骤十、金属基板蚀刻区域预填充塑封料
在步骤八形成的金属基板的蚀刻区域内,利用包封模具填充塑封料,完成引线框的预填充, In the etched area of the metal substrate formed in step 8, the encapsulation mold is used to fill the plastic encapsulation compound to complete the pre-filling of the lead frame,
所述包封模具包括上模具和下模具,所述下模具或下模具上开设有注料孔,包封时将步骤九揭除光刻胶膜后的金属基板放置于上模具与下模具之间,待上模具和下模具合模后通过下模具向上的注料孔或上模具向下的注料孔往基岛和引脚之间以及引脚与引脚之间的蚀刻区域内填充塑封料,完成引线框的预填充。 The encapsulation mold includes an upper mold and a lower mold, and the lower mold or the lower mold is provided with a material injection hole. When encapsulating, the metal substrate after removing the photoresist film in step 9 is placed between the upper mold and the lower mold After the upper mold and the lower mold are closed, the plastic seal is filled into the etched area between the base island and the pin and between the pin and the pin through the upward injection hole of the lower mold or the downward injection hole of the upper mold. material to complete the pre-population of the lead frame.
与现有技术相比,本发明的有益效果是: Compared with prior art, the beneficial effect of the present invention is:
本发明涉及一种有基岛预填塑封料先镀后刻引线框结构,其基岛与引脚之间以及引脚与引脚之间的蚀刻区域内均填充有塑封料,且塑封料与第一金属层和第二金属层齐平,它具有以下优点: The invention relates to a lead frame structure with a base island pre-filled with plastic encapsulation compound, which is filled with plastic encapsulant in the etching area between the base island and the pin and between the lead and lead, and the plastic encapsulant and the lead frame The first metal layer is flush with the second metal layer, which has the following advantages:
1、引线框底部不需要再贴附一层昂贵的抗高温软性有机物胶膜。因此也没有前面背景中所述的装片、打线、包封会产生的各种问题,材料成本、制程成本与质量成本等都可以得到大大降低。 1. There is no need to attach a layer of expensive high-temperature-resistant soft organic film to the bottom of the lead frame. Therefore, there are no various problems caused by chip loading, wire bonding, and encapsulation described in the previous background, and material costs, process costs, and quality costs can all be greatly reduced.
2、引线框采用正背面同时蚀刻,对比双面蚀刻预包封引线框,在工序上可减少50%的复杂度,降低成本;又可以减少因为二次对位造成的错位风险。 2. The front and back of the lead frame are etched at the same time. Compared with the double-sided etching of the pre-encapsulated lead frame, the complexity of the process can be reduced by 50%, and the cost can be reduced; it can also reduce the risk of misalignment caused by the secondary alignment.
附图说明 Description of drawings
图1~图12为本发明有基岛预填塑封料先镀后刻引线框的生产方法各工序示意图。 Figures 1 to 12 are schematic diagrams of each process of the production method of the pre-filled molding compound with base islands of the present invention, which is first plated and then engraved with a lead frame.
图13为本发明有基岛预填塑封料先镀后刻引线框结构示意图。 Fig. 13 is a schematic diagram of the structure of the lead frame with base island pre-filled molding compound first plated and then engraved according to the present invention.
图14为以往四面无引脚引线框背面贴上耐高温胶膜的示意图。 FIG. 14 is a schematic diagram of pasting a high temperature resistant adhesive film on the back of a four-sided lead frame without leads in the past.
图15为以往背面贴上耐高温胶膜的四面无引脚引线框封装时溢料的示意图。 FIG. 15 is a schematic diagram of flashing in conventional four-sided leadframe package with high temperature resistant adhesive film on the back.
图16为封装时产生溢料的四面无引脚引线框封装揭下耐高温胶膜后的示意图。 FIG. 16 is a schematic diagram of a four-sided leadframe package with no leads produced during packaging after the high-temperature-resistant adhesive film is removed.
图17为以往预包封双面蚀刻引线框的结构示意图。 FIG. 17 is a schematic structural view of a conventional pre-encapsulated double-sided etched lead frame.
其中: in:
基岛1
引脚2
耐高温胶膜3 High temperature resistant film 3
塑封料4
第一金属层5 first metal layer 5
第二金属层6
上模具7 Upper mold 7
下模具8 Lower mold 8
金属基板9 Metal Substrate 9
光刻胶膜10和11
蚀刻区域12。
具体实施方式 Detailed ways
本发明涉及一种有基岛预填塑封料先镀后刻引线框生产方法如下: The invention relates to a production method of a pre-filled molding compound with a base island, which is first plated and then engraved with a lead frame as follows:
步骤一、取金属基板
参见图1,取一片厚度合适的金属基板9,金属基板9的材质可以依据芯片的功能与特性进行变换,例如:铜、铝、铁、铜合金、不锈钢或镍铁合金等。 Referring to FIG. 1 , take a metal substrate 9 with a suitable thickness. The material of the metal substrate 9 can be changed according to the functions and characteristics of the chip, such as copper, aluminum, iron, copper alloy, stainless steel or nickel-iron alloy.
步骤二、贴膜作业
参见图2,利用贴膜设备在镀完金属层的金属基板9正面及背面分别贴上可进行曝光显影的光刻胶膜10和11,所述光刻胶膜10和11可以是干膜,也可以是湿膜。
Referring to Fig. 2, the
步骤三、金属基板正面及背面去除部分光刻胶膜 Step 3. Remove part of the photoresist film on the front and back of the metal substrate
参见图3,利用曝光显影设备将步骤二完成贴膜作业的金属基板9正面及背面进行曝光、显影与去除部分光刻胶膜,以露出金属基板9上后续需要进行电镀的区域。
Referring to FIG. 3 , use exposure and development equipment to expose, develop and remove part of the photoresist film on the front and back of the metal substrate 9 after the film attachment operation in
步骤四、镀金属层
参见图4,在步骤三中金属基板9正面去除部分光刻胶膜的区域镀上第一金属层5,在步骤三中金属基板9背面去除部分光刻胶膜的区域镀上第二金属层6,电镀的材料可以为金、镍金、镍钯金或银。 Referring to Fig. 4, the first metal layer 5 is plated on the area where part of the photoresist film is removed from the front of the metal substrate 9 in step 3, and the second metal layer is plated on the area where part of the photoresist film is removed from the back of the metal substrate 9 in step 3 6. The plating material can be gold, nickel gold, nickel palladium gold or silver.
步骤五、金属基板正面及背面揭膜作业 Step 5, peeling off the front and back of the metal substrate
参见图5,将金属基板9正面及背面余下的光刻胶膜揭除。 Referring to FIG. 5 , the remaining photoresist film on the front and back of the metal substrate 9 is removed.
步骤六、贴膜作业
参见图6,利用贴膜设备在步骤五揭除光刻胶膜后的金属基板9正面及背面再次分别贴上可进行曝光显影的光刻胶膜10和11,以保护后续的蚀刻工艺作业,所述光刻胶膜10和11可以是干膜,也可以是湿膜。
Referring to FIG. 6, use the film sticking equipment to paste the
步骤七、金属基板正面及背面去除部分光刻胶膜 Step 7. Remove part of the photoresist film on the front and back of the metal substrate
参见图7,利用曝光显影设备将步骤六完成贴膜作业的金属基板9正面及背面进行曝光、显影与去除部分光刻胶膜,以露出金属基板9上后续需要进行蚀刻的区域。
Referring to FIG. 7 , use the exposure and development equipment to expose, develop and remove part of the photoresist film on the front and back of the metal substrate 9 that has completed the film attachment operation in
步骤八、金属基板正面及背面进行全蚀刻或半蚀刻 Step 8. Full etching or half etching on the front and back of the metal substrate
参见图8,对步骤七中金属基板9正面及背面去除部分光刻胶膜的区域同时进行全蚀刻或半蚀刻,在金属基板9正面及背面形成凹陷的蚀刻区域12,同时相对形成基岛1和引脚2。
Referring to FIG. 8 , perform full etching or half etching at the same time on the area where part of the photoresist film is removed from the front and back of the metal substrate 9 in step 7, and form a recessed
步骤九、金属基板正面及背面揭膜作业 Step 9. The front and back of the metal substrate are peeled off
参见图9,将金属基板正面及背面余下的光刻胶膜揭除。 Referring to FIG. 9 , the remaining photoresist film on the front and back of the metal substrate is removed.
步骤十、金属基板蚀刻区域预填充塑封料
参见图10~12,在步骤八形成的金属基板的蚀刻区域内,利用包封模具填充塑封料,完成引线框的预填充。 Referring to FIGS. 10-12 , in the etched area of the metal substrate formed in Step 8, the encapsulation mold is used to fill the plastic encapsulant to complete the pre-filling of the lead frame.
所述包封模具包括上模具7和下模具8,所述上模具7或下模具8上开设有注料孔,包封时将步骤九揭除光刻胶膜后的金属基板放置于上模具7与下模具8之间,待上模具7和下模具8合模后通过下模具8向上的注料孔或上模具7向下的注料孔往基岛1和引脚2之间以及引脚2与引脚2之间的蚀刻区域12内填充塑封料,完成引线框的预填充。
The encapsulation mold includes an upper mold 7 and a lower mold 8, and the upper mold 7 or the lower mold 8 is provided with a material injection hole. When encapsulating, the metal substrate after removing the photoresist film in step 9 is placed on the upper mold 7 and the lower mold 8, after the upper mold 7 and the lower mold 8 are closed, pass through the upward injection hole of the lower mold 8 or the downward injection hole of the upper mold 7 to between the
最后成品参见图13,本发明有基岛预填塑封料先镀后刻引线框结构,它包括基岛1和引脚2,所述基岛1和引脚2正面镀有第一金属层5,基岛1和引脚2背面镀有第二金属层6,所述基岛1与引脚2之间以及引脚2与引脚2之间的蚀刻区域均填充有塑封料4,所述塑封料4与第一金属层5和第二金属层6齐平。
Refer to Figure 13 for the final product. The present invention has a base island pre-filled molding compound that is first plated and then engraved with a lead frame structure. It includes a
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