CN102201549B - Substrate for flexible light emitting device and fabrication method thereof - Google Patents
Substrate for flexible light emitting device and fabrication method thereof Download PDFInfo
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- CN102201549B CN102201549B CN 201110096762 CN201110096762A CN102201549B CN 102201549 B CN102201549 B CN 102201549B CN 201110096762 CN201110096762 CN 201110096762 CN 201110096762 A CN201110096762 A CN 201110096762A CN 102201549 B CN102201549 B CN 102201549B
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- 239000000758 substrate Substances 0.000 title claims abstract description 131
- 238000000034 method Methods 0.000 title claims abstract description 10
- 238000004519 manufacturing process Methods 0.000 title description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical group [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims abstract description 79
- 239000002042 Silver nanowire Substances 0.000 claims abstract description 79
- 239000002105 nanoparticle Substances 0.000 claims abstract description 61
- 239000002861 polymer material Substances 0.000 claims abstract description 25
- -1 polyethylene Polymers 0.000 claims description 25
- 238000002360 preparation method Methods 0.000 claims description 15
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 12
- 238000002834 transmittance Methods 0.000 claims description 11
- 239000004698 Polyethylene Substances 0.000 claims description 7
- 239000004642 Polyimide Substances 0.000 claims description 7
- 229920000058 polyacrylate Polymers 0.000 claims description 7
- 229920000515 polycarbonate Polymers 0.000 claims description 7
- 239000004417 polycarbonate Substances 0.000 claims description 7
- 229920000573 polyethylene Polymers 0.000 claims description 7
- 229920001721 polyimide Polymers 0.000 claims description 7
- 230000003746 surface roughness Effects 0.000 claims description 7
- 239000002033 PVDF binder Substances 0.000 claims description 6
- 238000004140 cleaning Methods 0.000 claims description 6
- 229910052757 nitrogen Inorganic materials 0.000 claims description 6
- 229920003207 poly(ethylene-2,6-naphthalate) Polymers 0.000 claims description 6
- 229920003229 poly(methyl methacrylate) Polymers 0.000 claims description 6
- 229920006260 polyaryletherketone Polymers 0.000 claims description 6
- 239000011112 polyethylene naphthalate Substances 0.000 claims description 6
- 239000004926 polymethyl methacrylate Substances 0.000 claims description 6
- 229920002981 polyvinylidene fluoride Polymers 0.000 claims description 6
- 239000004372 Polyvinyl alcohol Substances 0.000 claims description 4
- 229920002125 Sokalan® Polymers 0.000 claims description 4
- 229920006111 poly(hexamethylene terephthalamide) Polymers 0.000 claims description 4
- 239000004584 polyacrylic acid Substances 0.000 claims description 4
- 229920001748 polybutylene Polymers 0.000 claims description 4
- 229920002635 polyurethane Polymers 0.000 claims description 4
- 239000004814 polyurethane Substances 0.000 claims description 4
- 229920002451 polyvinyl alcohol Polymers 0.000 claims description 4
- 238000004528 spin coating Methods 0.000 claims description 4
- 238000007641 inkjet printing Methods 0.000 claims description 3
- 238000007650 screen-printing Methods 0.000 claims description 3
- 238000005507 spraying Methods 0.000 claims description 3
- XTXRWKRVRITETP-UHFFFAOYSA-N Vinyl acetate Chemical compound CC(=O)OC=C XTXRWKRVRITETP-UHFFFAOYSA-N 0.000 claims description 2
- 238000013007 heat curing Methods 0.000 claims description 2
- 238000001338 self-assembly Methods 0.000 claims description 2
- 239000010408 film Substances 0.000 description 58
- 239000010410 layer Substances 0.000 description 42
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 22
- 229910052710 silicon Inorganic materials 0.000 description 22
- 239000010703 silicon Substances 0.000 description 22
- 230000005693 optoelectronics Effects 0.000 description 12
- 239000002904 solvent Substances 0.000 description 8
- 239000007921 spray Substances 0.000 description 5
- 239000010409 thin film Substances 0.000 description 5
- LSGOVYNHVSXFFJ-UHFFFAOYSA-N vanadate(3-) Chemical compound [O-][V]([O-])([O-])=O LSGOVYNHVSXFFJ-UHFFFAOYSA-N 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 4
- 229920000728 polyester Polymers 0.000 description 4
- 238000001029 thermal curing Methods 0.000 description 4
- 229910052688 Gadolinium Inorganic materials 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 229920001083 polybutene Polymers 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- 229910052684 Cerium Inorganic materials 0.000 description 2
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 2
- BAPJBEWLBFYGME-UHFFFAOYSA-N Methyl acrylate Chemical compound COC(=O)C=C BAPJBEWLBFYGME-UHFFFAOYSA-N 0.000 description 2
- 229910019142 PO4 Inorganic materials 0.000 description 2
- 229910052772 Samarium Inorganic materials 0.000 description 2
- UCKMPCXJQFINFW-UHFFFAOYSA-N Sulphide Chemical compound [S-2] UCKMPCXJQFINFW-UHFFFAOYSA-N 0.000 description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- 239000012190 activator Substances 0.000 description 2
- 150000004645 aluminates Chemical class 0.000 description 2
- 238000005452 bending Methods 0.000 description 2
- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical compound [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 description 2
- UIWYJDYFSGRHKR-UHFFFAOYSA-N gadolinium atom Chemical compound [Gd] UIWYJDYFSGRHKR-UHFFFAOYSA-N 0.000 description 2
- 229910052747 lanthanoid Inorganic materials 0.000 description 2
- 229910052746 lanthanum Inorganic materials 0.000 description 2
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- MEFBJEMVZONFCJ-UHFFFAOYSA-N molybdate Chemical compound [O-][Mo]([O-])(=O)=O MEFBJEMVZONFCJ-UHFFFAOYSA-N 0.000 description 2
- 235000021317 phosphate Nutrition 0.000 description 2
- 229920000915 polyvinyl chloride Polymers 0.000 description 2
- 239000004800 polyvinyl chloride Substances 0.000 description 2
- 229910052761 rare earth metal Inorganic materials 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- KZUNJOHGWZRPMI-UHFFFAOYSA-N samarium atom Chemical compound [Sm] KZUNJOHGWZRPMI-UHFFFAOYSA-N 0.000 description 2
- 235000012431 wafers Nutrition 0.000 description 2
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 1
- 229910052692 Dysprosium Inorganic materials 0.000 description 1
- 229910052691 Erbium Inorganic materials 0.000 description 1
- 229910052693 Europium Inorganic materials 0.000 description 1
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 229910052765 Lutetium Inorganic materials 0.000 description 1
- 229910052779 Neodymium Inorganic materials 0.000 description 1
- 229910052777 Praseodymium Inorganic materials 0.000 description 1
- 229910006404 SnO 2 Inorganic materials 0.000 description 1
- 239000005084 Strontium aluminate Substances 0.000 description 1
- 229910052771 Terbium Inorganic materials 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- 229910052769 Ytterbium Inorganic materials 0.000 description 1
- 239000005083 Zinc sulfide Substances 0.000 description 1
- JNDMLEXHDPKVFC-UHFFFAOYSA-N aluminum;oxygen(2-);yttrium(3+) Chemical compound [O-2].[O-2].[O-2].[Al+3].[Y+3] JNDMLEXHDPKVFC-UHFFFAOYSA-N 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- RCMWGBKVFBTLCW-UHFFFAOYSA-N barium(2+);dioxido(dioxo)molybdenum Chemical compound [Ba+2].[O-][Mo]([O-])(=O)=O RCMWGBKVFBTLCW-UHFFFAOYSA-N 0.000 description 1
- WAKZZMMCDILMEF-UHFFFAOYSA-H barium(2+);diphosphate Chemical compound [Ba+2].[Ba+2].[Ba+2].[O-]P([O-])([O-])=O.[O-]P([O-])([O-])=O WAKZZMMCDILMEF-UHFFFAOYSA-H 0.000 description 1
- QKYBEKAEVQPNIN-UHFFFAOYSA-N barium(2+);oxido(oxo)alumane Chemical compound [Ba+2].[O-][Al]=O.[O-][Al]=O QKYBEKAEVQPNIN-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 239000011575 calcium Substances 0.000 description 1
- DNWNZRZGKVWORZ-UHFFFAOYSA-N calcium oxido(dioxo)vanadium Chemical compound [Ca+2].[O-][V](=O)=O.[O-][V](=O)=O DNWNZRZGKVWORZ-UHFFFAOYSA-N 0.000 description 1
- JGIATAMCQXIDNZ-UHFFFAOYSA-N calcium sulfide Chemical compound [Ca]=S JGIATAMCQXIDNZ-UHFFFAOYSA-N 0.000 description 1
- XFWJKVMFIVXPKK-UHFFFAOYSA-N calcium;oxido(oxo)alumane Chemical compound [Ca+2].[O-][Al]=O.[O-][Al]=O XFWJKVMFIVXPKK-UHFFFAOYSA-N 0.000 description 1
- QCCDYNYSHILRDG-UHFFFAOYSA-K cerium(3+);trifluoride Chemical compound [F-].[F-].[F-].[Ce+3] QCCDYNYSHILRDG-UHFFFAOYSA-K 0.000 description 1
- MMXSKTNPRXHINM-UHFFFAOYSA-N cerium(3+);trisulfide Chemical compound [S-2].[S-2].[S-2].[Ce+3].[Ce+3] MMXSKTNPRXHINM-UHFFFAOYSA-N 0.000 description 1
- YMNMFUIJDSASQW-UHFFFAOYSA-N distrontium;oxygen(2-);vanadium Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[O-2].[O-2].[V].[V].[Sr+2].[Sr+2] YMNMFUIJDSASQW-UHFFFAOYSA-N 0.000 description 1
- KBQHZAAAGSGFKK-UHFFFAOYSA-N dysprosium atom Chemical compound [Dy] KBQHZAAAGSGFKK-UHFFFAOYSA-N 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- UYAHIZSMUZPPFV-UHFFFAOYSA-N erbium Chemical compound [Er] UYAHIZSMUZPPFV-UHFFFAOYSA-N 0.000 description 1
- 150000002148 esters Chemical class 0.000 description 1
- OGPBJKLSAFTDLK-UHFFFAOYSA-N europium atom Chemical compound [Eu] OGPBJKLSAFTDLK-UHFFFAOYSA-N 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 150000002222 fluorine compounds Chemical class 0.000 description 1
- 229910001938 gadolinium oxide Inorganic materials 0.000 description 1
- 229940075613 gadolinium oxide Drugs 0.000 description 1
- YIAXEFITNBBEOD-UHFFFAOYSA-N gadolinium(3+) trisulfide Chemical compound [S--].[S--].[S--].[Gd+3].[Gd+3] YIAXEFITNBBEOD-UHFFFAOYSA-N 0.000 description 1
- JAOZQVJVXQKQAD-UHFFFAOYSA-K gadolinium(3+);phosphate Chemical compound [Gd+3].[O-]P([O-])([O-])=O JAOZQVJVXQKQAD-UHFFFAOYSA-K 0.000 description 1
- CMIHHWBVHJVIGI-UHFFFAOYSA-N gadolinium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[Gd+3].[Gd+3] CMIHHWBVHJVIGI-UHFFFAOYSA-N 0.000 description 1
- 238000009499 grossing Methods 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- LQFNMFDUAPEJRY-UHFFFAOYSA-K lanthanum(3+);phosphate Chemical compound [La+3].[O-]P([O-])([O-])=O LQFNMFDUAPEJRY-UHFFFAOYSA-K 0.000 description 1
- YTYSNXOWNOTGMY-UHFFFAOYSA-N lanthanum(3+);trisulfide Chemical compound [S-2].[S-2].[S-2].[La+3].[La+3] YTYSNXOWNOTGMY-UHFFFAOYSA-N 0.000 description 1
- OGRLITDAVSILTM-UHFFFAOYSA-N lead(2+);oxido(dioxo)vanadium Chemical compound [Pb+2].[O-][V](=O)=O.[O-][V](=O)=O OGRLITDAVSILTM-UHFFFAOYSA-N 0.000 description 1
- OHSVLFRHMCKCQY-UHFFFAOYSA-N lutetium atom Chemical compound [Lu] OHSVLFRHMCKCQY-UHFFFAOYSA-N 0.000 description 1
- 229910003443 lutetium oxide Inorganic materials 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- VLAPMBHFAWRUQP-UHFFFAOYSA-L molybdic acid Chemical class O[Mo](O)(=O)=O VLAPMBHFAWRUQP-UHFFFAOYSA-L 0.000 description 1
- QEFYFXOXNSNQGX-UHFFFAOYSA-N neodymium atom Chemical compound [Nd] QEFYFXOXNSNQGX-UHFFFAOYSA-N 0.000 description 1
- XZIGKOYGIHSSCQ-UHFFFAOYSA-N neodymium(3+);trisulfide Chemical compound [S-2].[S-2].[S-2].[Nd+3].[Nd+3] XZIGKOYGIHSSCQ-UHFFFAOYSA-N 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000012044 organic layer Substances 0.000 description 1
- MPARYNQUYZOBJM-UHFFFAOYSA-N oxo(oxolutetiooxy)lutetium Chemical compound O=[Lu]O[Lu]=O MPARYNQUYZOBJM-UHFFFAOYSA-N 0.000 description 1
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- NBIIXXVUZAFLBC-UHFFFAOYSA-K phosphate Chemical compound [O-]P([O-])([O-])=O NBIIXXVUZAFLBC-UHFFFAOYSA-K 0.000 description 1
- 239000010452 phosphate Substances 0.000 description 1
- 150000003013 phosphoric acid derivatives Chemical class 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- PUDIUYLPXJFUGB-UHFFFAOYSA-N praseodymium atom Chemical compound [Pr] PUDIUYLPXJFUGB-UHFFFAOYSA-N 0.000 description 1
- VUXGXCBXGJZHNB-UHFFFAOYSA-N praseodymium(3+);trisulfide Chemical compound [S-2].[S-2].[S-2].[Pr+3].[Pr+3] VUXGXCBXGJZHNB-UHFFFAOYSA-N 0.000 description 1
- KKZKWPQFAZAUSB-UHFFFAOYSA-N samarium(iii) sulfide Chemical compound [S-2].[S-2].[S-2].[Sm+3].[Sm+3] KKZKWPQFAZAUSB-UHFFFAOYSA-N 0.000 description 1
- 229910052712 strontium Inorganic materials 0.000 description 1
- FNWBQFMGIFLWII-UHFFFAOYSA-N strontium aluminate Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Al+3].[Al+3].[Sr+2].[Sr+2] FNWBQFMGIFLWII-UHFFFAOYSA-N 0.000 description 1
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- GZCRRIHWUXGPOV-UHFFFAOYSA-N terbium atom Chemical compound [Tb] GZCRRIHWUXGPOV-UHFFFAOYSA-N 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- 231100000331 toxic Toxicity 0.000 description 1
- 230000002588 toxic effect Effects 0.000 description 1
- TYIZUJNEZNBXRS-UHFFFAOYSA-K trifluorogadolinium Chemical compound F[Gd](F)F TYIZUJNEZNBXRS-UHFFFAOYSA-K 0.000 description 1
- BYMUNNMMXKDFEZ-UHFFFAOYSA-K trifluorolanthanum Chemical compound F[La](F)F BYMUNNMMXKDFEZ-UHFFFAOYSA-K 0.000 description 1
- QWVYNEUUYROOSZ-UHFFFAOYSA-N trioxido(oxo)vanadium;yttrium(3+) Chemical compound [Y+3].[O-][V]([O-])([O-])=O QWVYNEUUYROOSZ-UHFFFAOYSA-N 0.000 description 1
- JOPDZQBPOWAEHC-UHFFFAOYSA-H tristrontium;diphosphate Chemical compound [Sr+2].[Sr+2].[Sr+2].[O-]P([O-])([O-])=O.[O-]P([O-])([O-])=O JOPDZQBPOWAEHC-UHFFFAOYSA-H 0.000 description 1
- NAWDYIZEMPQZHO-UHFFFAOYSA-N ytterbium Chemical compound [Yb] NAWDYIZEMPQZHO-UHFFFAOYSA-N 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 1
- 229940105963 yttrium fluoride Drugs 0.000 description 1
- 229910000164 yttrium(III) phosphate Inorganic materials 0.000 description 1
- RBORBHYCVONNJH-UHFFFAOYSA-K yttrium(iii) fluoride Chemical compound F[Y](F)F RBORBHYCVONNJH-UHFFFAOYSA-K 0.000 description 1
- UXBZSSBXGPYSIL-UHFFFAOYSA-K yttrium(iii) phosphate Chemical compound [Y+3].[O-]P([O-])([O-])=O UXBZSSBXGPYSIL-UHFFFAOYSA-K 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
- 229910052984 zinc sulfide Inorganic materials 0.000 description 1
- DRDVZXDWVBGGMH-UHFFFAOYSA-N zinc;sulfide Chemical compound [S-2].[Zn+2] DRDVZXDWVBGGMH-UHFFFAOYSA-N 0.000 description 1
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- Electroluminescent Light Sources (AREA)
- Laminated Bodies (AREA)
Abstract
本发明公开了一种柔性发光器件用基板,包括柔性衬底和导电层,其特征在于,所述柔性衬底和导电层由以下两种方式中的一种构成:①所述柔性衬底为透明介电性聚合物材料,所述导电层为银纳米线薄膜,所述银纳米线薄膜的空隙中填充有无机发光纳米颗粒;②所述柔性衬底为掺杂无机发光纳米颗粒的透明介电性聚合物材料,所述导电层为银纳米线薄膜,所述银纳米线薄膜的空隙中填充有掺杂无机发光纳米颗粒的透明介电性聚合物材料。该基板解决了银纳米线薄膜粗糙度大以及银纳米线薄膜与柔性衬底之间结合力差的问题,提高了银纳米线薄膜的电导率和表面的平整度,增加了银纳米线薄膜与柔性衬底之间结合力。
The invention discloses a substrate for a flexible light-emitting device, which includes a flexible substrate and a conductive layer, and is characterized in that the flexible substrate and the conductive layer are composed of one of the following two methods: ①The flexible substrate is Transparent dielectric polymer material, the conductive layer is a silver nanowire film, and the gaps of the silver nanowire film are filled with inorganic light-emitting nanoparticles; ②The flexible substrate is a transparent medium doped with inorganic light-emitting nanoparticles An electrical polymer material, the conductive layer is a silver nanowire film, and the gaps of the silver nanowire film are filled with a transparent dielectric polymer material doped with inorganic light-emitting nanoparticles. The substrate solves the problems of large roughness of the silver nanowire film and poor bonding force between the silver nanowire film and the flexible substrate, improves the electrical conductivity and the flatness of the surface of the silver nanowire film, and increases the compatibility between the silver nanowire film and the flexible substrate. Bonding force between flexible substrates.
Description
技术领域 technical field
本发明涉及有机光电子技术领域,具体涉及一种柔性发光器件用基板及其制备方法。The invention relates to the technical field of organic optoelectronics, in particular to a substrate for a flexible light-emitting device and a preparation method thereof.
背景技术 Background technique
光电子技术是继微电子技术之后迅速发展的科技含量很高的产业。随着光电子技术的快速发展,太阳能电池、光影像传感器、平面显示器、薄膜晶体管等光电子产品都逐渐发展成熟,它们大大改善了人们的生活。同时,光电子信息技术在社会生活各个领域的广泛应用,也创造了日益增长的巨大市场。发达国家都把光电信息产业作为重点发展的领域之一,光电子信息领域的竞争正在世界范围展开。Optoelectronics technology is a rapidly developing industry with high technological content after microelectronics technology. With the rapid development of optoelectronic technology, optoelectronic products such as solar cells, optical image sensors, flat panel displays, and thin film transistors have gradually matured, and they have greatly improved people's lives. At the same time, the wide application of optoelectronic information technology in various fields of social life has also created a huge growing market. Developed countries regard the optoelectronic information industry as one of the key development areas, and the competition in the optoelectronic information field is unfolding worldwide.
目前有机光电子器件大都是制备在刚性基板(如玻璃或硅片上),他们虽然具有优良的器件性能,但抗震动,抗冲击的能力较弱,重量相对较重,携带不甚方便,在某些场合的应用受到很大的限制。人们开始试图将有机光电子器件沉积在柔性基板上而不是刚性基板上。At present, organic optoelectronic devices are mostly prepared on rigid substrates (such as glass or silicon wafers). Although they have excellent device performance, they are weak in anti-vibration and impact resistance, relatively heavy in weight, and inconvenient to carry. The application in some occasions is greatly restricted. Attempts have been made to deposit organic optoelectronic devices on flexible substrates instead of rigid substrates.
用柔性基板代替刚性基板的好处是产品更轻、不易破碎、所占空间小且更便于携带。但是,尽管有这些优点,用柔性基板代替刚性基板还存在许多限制,柔性器件的制备仍然有许多基础问题需要解决。对于柔性衬底来说,由于柔性衬底的表面平整性远不及刚性衬底,而对柔性衬底进行表面平滑处理要特殊的设备且工艺难度较大,提高了基板的生产成本;柔性衬底的水、氧透过率远大于刚性衬底,导致光电子器件受从基板透过的水氧的影响,降低了器件的性能。The benefits of using a flexible substrate instead of a rigid one are that the product is lighter, less breakable, takes up less space and is more portable. However, despite these advantages, there are still many limitations in replacing rigid substrates with flexible substrates, and the fabrication of flexible devices still has many fundamental issues to be solved. For flexible substrates, since the surface smoothness of flexible substrates is far less than that of rigid substrates, special equipment and difficult processes are required for surface smoothing of flexible substrates, which increases the production cost of substrates; flexible substrates The water and oxygen transmission rate of the substrate is much higher than that of the rigid substrate, which causes the optoelectronic device to be affected by the water and oxygen passing through the substrate, which reduces the performance of the device.
对于电极层来说,常规的电极层材料In2O3:SnO2(ITO)用作柔性基板的电极存在以下缺点:(1)ITO中的铟有剧毒,在制备和应用中对人体有害;(2)ITO中的In2O3价格昂贵,成本较高;(3)ITO薄膜易受到氢等离子体的还原作用,功效降低,这种现象在低温、低等离子体密度下也会发生;(4)在柔性衬底上的ITO薄膜会因为柔性衬底的弯曲而出现电导率下降的现象;(5)采用厚的ITO层会降低透光率,50-80%的光线在玻璃、ITO和有机层吸收掉,采用薄的ITO层工艺难度较大。近年来,由于银纳米线薄膜具有较高的电导率和可见光透过率已成为潜在的可代替ITO的电极材料,但银纳米线薄膜存在表面粗糙度大以及银纳米线薄膜与柔性衬底之间结合力差的缺点,降低了基于银纳米线薄膜电极的光电子器件的性能。For the electrode layer, the conventional electrode layer material In 2 O 3 :SnO 2 (ITO) used as the electrode of the flexible substrate has the following disadvantages: (1) Indium in ITO is highly toxic and harmful to the human body during preparation and application ; (2) In 2 O 3 in ITO is expensive and the cost is high; (3) ITO thin film is susceptible to the reduction effect of hydrogen plasma, and the efficacy is reduced, and this phenomenon will also occur at low temperature and low plasma density; (4) The ITO film on the flexible substrate will have a decrease in conductivity due to the bending of the flexible substrate; (5) the use of a thick ITO layer will reduce the light transmittance, and 50-80% of the light will be on the glass, ITO And the organic layer is absorbed, and it is difficult to adopt a thin ITO layer process. In recent years, due to the high electrical conductivity and visible light transmittance of silver nanowire film, it has become a potential electrode material that can replace ITO, but the silver nanowire film has large surface roughness and the gap between silver nanowire film and flexible substrate The disadvantage of poor inter-bonding force reduces the performance of optoelectronic devices based on silver nanowire thin film electrodes.
因此,如果能够解决上述这些问题,将会使光电子器件得到更为广泛的应用和更加快速的发展。Therefore, if the above-mentioned problems can be solved, optoelectronic devices will be more widely used and developed more rapidly.
发明内容 Contents of the invention
本发明所要解决的问题是:如何提供一种柔性发光器件用基板及其制备方法,该基板解决了银纳米线薄膜粗糙度大以及银纳米线薄膜与柔性衬底之间结合力差的问题,提高了银纳米线薄膜表面的平整度以及银纳米线薄膜与柔性衬底之间结合力。The problem to be solved by the present invention is: how to provide a substrate for a flexible light-emitting device and its preparation method, the substrate solves the problems of large roughness of the silver nanowire film and poor bonding force between the silver nanowire film and the flexible substrate, The flatness of the surface of the silver nanowire film and the binding force between the silver nanowire film and the flexible substrate are improved.
本发明所提出的技术问题是这样解决的:提供一种柔性发光器件用基板,包括柔性衬底和导电层,其特征在于,所述柔性衬底和导电层由以下两种方式中的一种构成:①所述柔性衬底为透明介电性聚合物材料,所述导电层为银纳米线薄膜,所述银纳米线薄膜的空隙中填充有无机发光纳米颗粒;②所述柔性衬底为掺杂无机发光纳米颗粒的透明介电性聚合物材料,所述导电层为银纳米线薄膜,所述银纳米线薄膜的空隙中填充有掺杂无机发光纳米颗粒的透明介电性聚合物材料。The technical problem proposed by the present invention is solved by providing a substrate for a flexible light-emitting device, including a flexible substrate and a conductive layer, characterized in that the flexible substrate and the conductive layer are formed in one of the following two ways: Composition: ① The flexible substrate is a transparent dielectric polymer material, the conductive layer is a silver nanowire film, and the gaps of the silver nanowire film are filled with inorganic light-emitting nanoparticles; ② The flexible substrate is A transparent dielectric polymer material doped with inorganic luminescent nanoparticles, the conductive layer is a silver nanowire film, and gaps in the silver nanowire film are filled with a transparent dielectric polymer material doped with inorganic luminescent nanoparticles .
按照本发明所提供的柔性发光器件用基板,其特征在于,所述无机发光纳米颗粒尺寸为1~100nm,在第②种方式中无机发光纳米颗粒的掺杂质量比小于或等于40%。According to the substrate for flexible light-emitting devices provided by the present invention, it is characterized in that the size of the inorganic luminescent nanoparticles is 1-100 nm, and in the second method, the doping mass ratio of the inorganic luminescent nanoparticles is less than or equal to 40%.
按照本发明所提供的柔性发光器件用基板,其特征在于,所述无机发光纳米颗粒是以硫化物、氧化物、氟化物、磷酸盐、钒酸盐、铌酸盐、铝酸盐或钼酸盐等为发光基质,以稀土镧系元素作为激活剂和助激活剂的发光颗粒。According to the substrate for flexible light-emitting devices provided by the present invention, it is characterized in that the inorganic light-emitting nanoparticles are made of sulfide, oxide, fluoride, phosphate, vanadate, niobate, aluminate or molybdic acid Salt, etc. are used as luminescent substrates, and luminescent particles with rare earth lanthanides as activators and co-activators.
按照本发明所提供的柔性发光器件用基板,其特征在于,所述硫化物包括硫化锌、硫化镧、硫化钙、硫化铈、硫化镨、硫化钕、硫化钐和硫化钆;所述氧化物包括氧化锌、氧化钇、氧化钛、氧化钆和氧化镥;所述氟化物包括氟化钇、氟化钆、氟化镧和氟化铈;所述磷酸盐包括磷酸镧、磷酸钆、磷酸锶、磷酸钇和磷酸钡;所述钒酸盐包括钒酸钆、钒酸钇、钒酸镧、钒酸铈、钒酸钙、钒酸铅和钒酸锶;所述铌酸盐包括铌酸钙、铌酸钇、铌酸钆和铌酸镥;所述铝酸盐包括铝酸钇、铝酸钡、铝酸钆、铝酸钙和铝酸锶;所述钼酸盐包括钼酸镧、钼酸锶和钼酸钡;所述稀土镧系元素包括铕、钐、铒、钕、铽、镝、钐、铈、镱和镨。According to the substrate for flexible light-emitting devices provided by the present invention, it is characterized in that the sulfide includes zinc sulfide, lanthanum sulfide, calcium sulfide, cerium sulfide, praseodymium sulfide, neodymium sulfide, samarium sulfide and gadolinium sulfide; the oxide includes Zinc oxide, yttrium oxide, titanium oxide, gadolinium oxide, and lutetium oxide; the fluorides include yttrium fluoride, gadolinium fluoride, lanthanum fluoride, and cerium fluoride; the phosphates include lanthanum phosphate, gadolinium phosphate, strontium phosphate, Yttrium phosphate and barium phosphate; Described vanadate comprises gadolinium vanadate, yttrium vanadate, lanthanum vanadate, cerium vanadate, calcium vanadate, lead vanadate and strontium vanadate; Described niobate comprises calcium niobate, Yttrium niobate, gadolinium niobate and lutetium niobate; said aluminates include yttrium aluminate, barium aluminate, gadolinium aluminate, calcium aluminate and strontium aluminate; said molybdates include lanthanum molybdate, molybdate strontium and barium molybdate; the rare earth lanthanides include europium, samarium, erbium, neodymium, terbium, dysprosium, samarium, cerium, ytterbium and praseodymium.
按照本发明所提供的柔性发光器件用基板,其特征在于,所述透明介电性聚合物材料包括聚乙烯、聚甲基丙烯酸甲酯、聚碳酸酯、聚氨基甲酸酯、聚酰亚胺、氯醋树脂聚丙烯酸、聚芳醚酮、聚偏氟乙烯、聚酯、聚萘二甲酸乙二醇酯、聚丙烯酸酯、聚对苯二甲酰三甲基己二胺、聚丁烯和聚乙烯醇。According to the substrate for flexible light-emitting devices provided by the present invention, it is characterized in that the transparent dielectric polymer material includes polyethylene, polymethyl methacrylate, polycarbonate, polyurethane, polyimide , PVC resin polyacrylic acid, polyaryletherketone, polyvinylidene fluoride, polyester, polyethylene naphthalate, polyacrylate, polyhexamethylene terephthalamide, polybutylene and polyvinyl alcohol.
一种柔性发光器件用基板的制备方法,其特征在于,包括以下步骤:A method for preparing a substrate for a flexible light-emitting device, comprising the following steps:
①对表面粗糙度小于1nm的刚性基板(如玻璃或硅片)进行清洗,清洗后用干燥氮气吹干;① Clean the rigid substrate (such as glass or silicon wafer) with surface roughness less than 1nm, and dry it with dry nitrogen after cleaning;
②采取旋涂或喷涂或自组装或喷墨打印或丝网印刷的方式在洁净的基板上制备银纳米线薄膜;② Preparation of silver nanowire film on a clean substrate by spin coating or spray coating or self-assembly or inkjet printing or screen printing;
③在银纳米线薄膜上旋涂或喷涂掺杂无机发光纳米颗粒的透明介电性聚合物材料层,或先旋涂或滴涂或喷涂含无机发光纳米颗粒的溶液,再旋涂或喷涂透明介电性聚合物材料层,所述透明介电性聚合物材料包括聚乙烯、聚甲基丙烯酸甲酯、聚碳酸酯、聚氨基甲酸酯、聚酰亚胺、氯醋树脂聚丙烯酸、聚芳醚酮、聚偏氟乙烯、聚酯、聚萘二甲酸乙二醇酯、聚丙烯酸酯、聚对苯二甲酰三甲基己二胺、聚丁烯和聚乙烯醇;③ Spin-coat or spray-coat a transparent dielectric polymer material layer doped with inorganic luminescent nanoparticles on the silver nanowire film, or first spin-coat or drop-coat or spray-coat a solution containing inorganic luminescent nanoparticles, and then spin-coat or spray-coat a transparent Dielectric polymer material layer, the transparent dielectric polymer material includes polyethylene, polymethyl methacrylate, polycarbonate, polyurethane, polyimide, vinyl acetate polyacrylic acid, poly Aryl ether ketones, polyvinylidene fluoride, polyesters, polyethylene naphthalate, polyacrylates, polyhexamethylene terephthalamide, polybutylene, and polyvinyl alcohol;
④对刚性基板表面进行热固化处理;④ heat curing treatment on the surface of the rigid substrate;
⑤将银纳米线薄膜和固化后的透明介电性聚合物材料层或掺杂无机发光纳米颗粒的透明介电性聚合物材料层剥离刚性基板表面,形成柔性导电基板;⑤Peel off the surface of the rigid substrate by peeling off the silver nanowire film and the cured transparent dielectric polymer material layer or the transparent dielectric polymer material layer doped with inorganic luminescent nanoparticles to form a flexible conductive substrate;
⑥测试柔性导电基板的透过率、电导率和表面形貌的各项参数。⑥ Test the parameters of the transmittance, conductivity and surface morphology of the flexible conductive substrate.
本发明的有益效果:本发明的导电层中存在无机发光纳米颗粒,使导电层在激发光照射下发光,不仅增强了基于该基板的发光器件的发光强度,而且简化了基于该基板的发光器件的结构和所需的材料,同时由于导电层采用的银纳米线能够提高无机发光纳米颗粒的发光强度,进一步增加了基于该基板的发光器件的发光强度;本发明的导电层在粗糙度小的刚性基板上制备,导电层空隙中填充有无机发光纳米颗粒或掺杂无机发光纳米颗粒的透明介电性聚合物材料,通过剥离的方法形成柔性基板的导电层,提高了导电层表面的平整度;本发明的柔性衬底中的透明介电性聚合物材料具有高的可见光透过率的特点,提高了柔性基板的可见光透过率;采用先制备导电层再制备柔性衬底的方式形成柔性基板,增加了导电层与柔性衬底间的结合力。Beneficial effects of the present invention: there are inorganic light-emitting nanoparticles in the conductive layer of the present invention, so that the conductive layer emits light under excitation light irradiation, which not only enhances the luminous intensity of the light-emitting device based on the substrate, but also simplifies the light-emitting device based on the substrate structure and required materials, and at the same time, the silver nanowires used in the conductive layer can improve the luminous intensity of the inorganic luminescent nanoparticles, further increasing the luminous intensity of the light-emitting device based on the substrate; the conductive layer of the present invention has a small roughness Prepared on a rigid substrate, the voids of the conductive layer are filled with inorganic luminescent nanoparticles or transparent dielectric polymer materials doped with inorganic luminescent nanoparticles, and the conductive layer of the flexible substrate is formed by peeling off, which improves the smoothness of the surface of the conductive layer ; The transparent dielectric polymer material in the flexible substrate of the present invention has the characteristics of high visible light transmittance, which improves the visible light transmittance of the flexible substrate; the flexible substrate is formed by first preparing the conductive layer and then preparing the flexible substrate. The substrate increases the bonding force between the conductive layer and the flexible substrate.
附图说明 Description of drawings
图1是本发明实施例1-10的柔性发光器件用基板的结构示意图;Fig. 1 is a schematic structural view of a substrate for a flexible light-emitting device according to Embodiment 1-10 of the present invention;
图2是本发明实施例1中的基板的可见光透过率。FIG. 2 is the visible light transmittance of the substrate in Example 1 of the present invention.
其中,1、柔性衬底,2、导电层。Wherein, 1. a flexible substrate, and 2. a conductive layer.
具体实施方式 Detailed ways
下面结合附图以及实施例对本发明作进一步描述:Below in conjunction with accompanying drawing and embodiment the present invention will be further described:
本发明的技术方案是提供一种柔性发光器件用基板,如图1所示,器件的结构包括柔性衬底1,导电层2。The technical solution of the present invention is to provide a substrate for a flexible light-emitting device. As shown in FIG. 1 , the structure of the device includes a
本发明中柔性衬底1为导电层的依托,它有较好的弯折性能,有一定的防水汽和氧气渗透的能力,有良好的化学稳定性和热稳定性,导电层2要求有良好的导电能力,柔性衬底和导电层由以下两种方式构成:①所述柔性衬底为透明介电性聚合物材料,所述导电层为银纳米线薄膜,所述银纳米线薄膜的空隙中填充有无机发光纳米颗粒;②所述柔性衬底为掺杂无机发光纳米颗粒的透明介电性聚合物材料,所述导电层为银纳米线薄膜,所述银纳米线薄膜的空隙中填充有掺杂无机发光纳米颗粒的透明介电性聚合物材料,所述透明介电性聚合物材料包括聚乙烯、聚甲基丙烯酸甲酯、聚碳酸酯、聚氨基甲酸酯、聚酰亚胺、氯醋树脂聚丙烯酸、聚芳醚酮、聚偏氟乙烯、聚酯、聚萘二甲酸乙二醇酯、聚丙烯酸酯、聚对苯二甲酰三甲基己二胺、聚丁烯和聚乙烯醇。In the present invention, the
以下是本发明的具体实施例:The following are specific embodiments of the present invention:
实施例1Example 1
如图1所示基板结构,柔性衬底1采用聚乙烯,导电层2采用银纳米线薄膜,所述银纳米线薄膜的空隙中填充无机发光纳米颗粒,所述无机发光纳米颗粒尺寸为1nm。As the substrate structure shown in Figure 1, the
制备方法如下:The preparation method is as follows:
①对表面粗糙度小于1nm的硅基板进行清洗,清洗后用干燥氮气吹干;① Clean the silicon substrate whose surface roughness is less than 1nm, and dry it with dry nitrogen after cleaning;
②将银纳米线均匀分散在溶剂中,采取旋涂方式在洁净的硅基板上制备银纳米线薄膜,旋涂时转速为4000转/秒,时长60秒,膜厚约为80纳米;② Disperse the silver nanowires evenly in the solvent, and prepare the silver nanowire film on the clean silicon substrate by spin coating. The rotation speed of the spin coating is 4000 rpm, the duration is 60 seconds, and the film thickness is about 80 nanometers;
③在银纳米线薄膜上喷涂含无机发光纳米颗粒的溶液,将硅基板在80℃的环境中放置30分钟,除去银纳米线薄膜中残存的溶剂,再在银纳米线薄膜上喷涂聚乙烯;③ Spray a solution containing phosphorescent nanoparticles on the silver nanowire film, place the silicon substrate in an environment of 80°C for 30 minutes, remove the remaining solvent in the silver nanowire film, and then spray polyethylene on the silver nanowire film;
④对硅基板表面进行热固化处理;④ Thermal curing treatment on the surface of the silicon substrate;
⑤将银纳米线薄膜和固化后的聚乙烯层剥离硅基板表面,形成柔性导电基板;⑤Peel the silver nanowire film and the cured polyethylene layer off the surface of the silicon substrate to form a flexible conductive substrate;
⑥测试柔性导电基板的透过率、电导率和表面形貌的各项参数。⑥ Test the parameters of the transmittance, conductivity and surface morphology of the flexible conductive substrate.
实施例2Example 2
如图1所示基板结构,柔性衬底1采用聚甲基丙烯酸甲酯,导电层2采用银纳米线薄膜,所述银纳米线薄膜的空隙中填充无机发光纳米颗粒,所述无机发光纳米颗粒尺寸为5nm。The substrate structure shown in Figure 1, the
制备方法如下:The preparation method is as follows:
①对表面粗糙度小于1nm的硅基板进行清洗,清洗后用干燥氮气吹干;① Clean the silicon substrate whose surface roughness is less than 1nm, and dry it with dry nitrogen after cleaning;
②将银纳米线均匀分散在溶剂中,采取喷涂的方式在洁净的硅基板上制备银纳米线薄膜;② Disperse the silver nanowires evenly in the solvent, and prepare the silver nanowire film on the clean silicon substrate by spraying;
③在银纳米线薄膜上喷涂含无机发光纳米颗粒的溶液,将硅基板在80℃的环境中放置30分钟,除去银纳米线薄膜中残存的溶剂,再在银纳米线薄膜上喷涂聚甲基丙烯酸甲酯;③Spray a solution containing inorganic luminescent nanoparticles on the silver nanowire film, place the silicon substrate in an environment of 80°C for 30 minutes, remove the remaining solvent in the silver nanowire film, and then spray polymethyl ether on the silver nanowire film. Methyl acrylate;
④对硅基板表面进行热固化处理;④ Thermal curing treatment on the surface of the silicon substrate;
⑤将银纳米线薄膜和固化后的聚甲基丙烯酸甲酯层剥离硅基板表面,形成柔性导电基板;⑤Peel the silver nanowire film and the cured polymethyl methacrylate layer off the surface of the silicon substrate to form a flexible conductive substrate;
⑥测试柔性导电基板的透过率、电导率和表面形貌的各项参数。⑥ Test the parameters of the transmittance, conductivity and surface morphology of the flexible conductive substrate.
实施例3Example 3
如图1所示基板结构,柔性衬底1采用聚碳酸酯,导电层2采用银纳米线薄膜,所述银纳米线薄膜的空隙中填充无机发光纳米颗粒,所述无机发光纳米颗粒尺寸为10nm。The substrate structure shown in Figure 1, the
制备方法如下:The preparation method is as follows:
①对表面粗糙度小于1nm的硅基板进行清洗,清洗后用干燥氮气吹干;① Clean the silicon substrate whose surface roughness is less than 1nm, and dry it with dry nitrogen after cleaning;
②将银纳米线均匀分散在溶剂中,采取丝网印刷的方式在洁净的硅基板上制备银纳米线薄膜;② Disperse silver nanowires evenly in a solvent, and prepare silver nanowire films on a clean silicon substrate by screen printing;
③在银纳米线薄膜上喷涂含无机发光纳米颗粒的溶液,将硅基板在80℃的环境中放置30分钟,除去银纳米线薄膜中残存的溶剂,再在银纳米线薄膜上喷涂聚碳酸酯;③Spray a solution containing inorganic luminescent nanoparticles on the silver nanowire film, place the silicon substrate in an environment of 80°C for 30 minutes, remove the remaining solvent in the silver nanowire film, and then spray polycarbonate on the silver nanowire film ;
④对硅基板表面进行热固化处理;④ Thermal curing treatment on the surface of the silicon substrate;
⑤将银纳米线薄膜和固化后的聚碳酸酯层剥离硅基板表面,形成柔性导电基板;⑤Peel the silver nanowire film and the cured polycarbonate layer off the surface of the silicon substrate to form a flexible conductive substrate;
⑥测试柔性导电基板的透过率、电导率和表面形貌的各项参数。⑥ Test the parameters of the transmittance, conductivity and surface morphology of the flexible conductive substrate.
实施例4Example 4
如图1所示基板结构,柔性衬底1采用聚酰亚胺,导电层2采用银纳米线薄膜,所述银纳米线薄膜的空隙中填充无机发光纳米颗粒,所述无机发光纳米颗粒尺寸为20nm。Substrate structure as shown in Figure 1,
制备方法如下:The preparation method is as follows:
①对表面粗糙度小于1nm的硅基板进行清洗,清洗后用干燥氮气吹干;① Clean the silicon substrate whose surface roughness is less than 1nm, and dry it with dry nitrogen after cleaning;
②将银纳米线均匀分散在溶剂中,采取喷墨打印的方式在洁净的硅基板上制备银纳米线薄膜;② Disperse silver nanowires evenly in a solvent, and prepare silver nanowire films on a clean silicon substrate by inkjet printing;
③在银纳米线薄膜上喷涂含无机发光纳米颗粒的溶液,将硅基板在80℃的环境中放置30分钟,除去银纳米线薄膜中残存的溶剂,再在银纳米线薄膜上喷涂聚酰亚胺;③Spray a solution containing inorganic luminescent nanoparticles on the silver nanowire film, place the silicon substrate in an environment of 80°C for 30 minutes, remove the remaining solvent in the silver nanowire film, and then spray polyimide on the silver nanowire film. amine;
④对硅基板表面进行热固化处理;④ Thermal curing treatment on the surface of the silicon substrate;
⑤将银纳米线薄膜和固化后的聚酰亚胺层剥离硅基板表面,形成柔性导电基板;⑤Peel the silver nanowire film and the cured polyimide layer off the surface of the silicon substrate to form a flexible conductive substrate;
⑥测试柔性导电基板的透过率、电导率和表面形貌的各项参数。⑥ Test the parameters of the transmittance, conductivity and surface morphology of the flexible conductive substrate.
实施例5Example 5
如图1所示基板结构,柔性衬底1采用掺杂无机发光纳米颗粒的聚芳醚酮,导电层2银纳米线薄膜,所述银纳米线薄膜的空隙中填充掺杂无机发光纳米颗粒的聚芳醚酮,所述无机发光纳米颗粒尺寸为30nm,所述无机发光纳米颗粒的掺杂质量比为5%。The substrate structure shown in Figure 1, the
制备方法与实施例1相似。The preparation method is similar to Example 1.
实施例6Example 6
如图1所示基板结构,柔性衬底1采用掺杂无机发光纳米颗粒的聚偏氟乙烯,导电层2采用银纳米线薄膜,所述银纳米线薄膜的空隙中填充掺杂无机发光纳米颗粒的聚偏氟乙烯,所述无机发光纳米颗粒尺寸为50nm,所述无机发光纳米颗粒的掺杂质量比为10%。The substrate structure shown in Figure 1, the
制备方法与实施例1相似。The preparation method is similar to Example 1.
实施例7Example 7
如图1所示基板结构,柔性衬底1采用掺杂无机发光纳米颗粒的聚酯,导电层2采用银纳米线薄膜,所述银纳米线薄膜的空隙中填充掺杂无机发光纳米颗粒的聚酯,所述无机发光纳米颗粒尺寸为60nm,所述无机发光纳米颗粒的掺杂质量比为15%。The substrate structure shown in Figure 1, the
制备方法与实施例1相似。The preparation method is similar to Example 1.
实施例8Example 8
如图1所示基板结构,柔性衬底1采用掺杂无机发光纳米颗粒的聚萘二甲酸乙二醇酯,导电层2采用银纳米线薄膜,所述银纳米线薄膜的空隙中填充掺杂无机发光纳米颗粒的聚萘二甲酸乙二醇酯,所述无机发光纳米颗粒尺寸为70nm,所述无机发光纳米颗粒的掺杂质量比为20%。The substrate structure shown in Figure 1, the
制备方法与实施例1相似。The preparation method is similar to Example 1.
实施例9Example 9
如图1所示基板结构,柔性衬底1采用掺杂无机发光纳米颗粒的聚丙烯酸酯,导电层2采用银纳米线薄膜,所述银纳米线薄膜的空隙中填充掺杂无机发光纳米颗粒的聚丙烯酸酯,所述无机发光纳米颗粒尺寸为80nm,所述无机发光纳米颗粒的掺杂质量比为30%。The substrate structure shown in Figure 1, the
制备方法与实施例1相似。The preparation method is similar to Example 1.
实施例10Example 10
如图1所示基板结构,柔性衬底1采用掺杂无机发光纳米颗粒的聚丁烯,导电层2采用银纳米线薄膜,所述银纳米线薄膜的空隙中填充掺杂无机发光纳米颗粒的聚丁烯,所述无机发光纳米颗粒尺寸为100nm,所述无机发光纳米颗粒的掺杂质量比为40%。The substrate structure shown in Figure 1, the
制备方法与实施例1相似。The preparation method is similar to Example 1.
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| CN104766932A (en) * | 2015-04-22 | 2015-07-08 | 电子科技大学 | Biodegradable substrate for flexible optoelectronic device and method for manufacturing same |
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