CN102201505A - Nitride LED (Light Emitting Diode) structure and preparation method thereof - Google Patents
Nitride LED (Light Emitting Diode) structure and preparation method thereof Download PDFInfo
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Abstract
The invention discloses a nitride LED (Light Emitting Diode) structure. In the structure, a P type additional quantum well is additionally arranged between an electron blocking layer and a P type hole injection layer, and the forbidden bandwidth of the P type additional quantum well is larger than or equal to that of a potential well of a quantum well in a multi-quantum well active layer, so that the composite efficiency of electrons and holes is increased, the quantity of released electrons in the multi-quantum well active layer is further reduced, and the internal quantum efficiency and luminous intensity of a nitride LED are increased. Meanwhile, the invention also discloses a preparation method of the nitride LED structure. As the P type additional quantum well is additionally arranged between the electron blocking layer and the P type hole injection layer, and the forbidden bandwidth of the P type additional quantum well is larger than or equal to that of the potential well of the quantum well in the multi-quantum well active layer, the composite efficiency of electrons and holes is increased, the quantity of the released electrons in the multi-quantum well active layer is further reduced, and the internal quantum efficiency and luminous intensity of the nitride LED are increased.
Description
Technical field
The present invention relates to the LED preparing technical field, relate in particular to a kind of nitride LED structure and preparation method thereof.
Background technology
Light-emitting diode (LED, Light Emitting Diode) is a kind of semiconductor solid luminescence device, and it utilizes semiconductor PN as luminescent material, can directly electricity be converted to light.After the two ends of semiconductor PN add forward voltage, inject the minority carrier of PN junction and majority carrier and take place compoundly, emit superfluous energy and cause photo emissions, directly send the light that color is red, orange, yellow, green, blue, blue, purple.Wherein, the GaN sill is meant GaN, InN, AlN and their ternary and quaternary compound, belongs to the direct gap semiconductor material, and its emission wavelength has been contained near-infrared, visible and deep ultraviolet wave band under the room temperature, thereby is widely used in the LED field.
At present, the nitride LED luminescent device mainly adopts the P-N junction structure, and is provided with multi-quantum pit structure between P type semiconductor and N type semiconductor, and described multi-quantum pit structure is as active area.When device was worked, recombination luminescence in the quantum well active area was imported from the N type district and the p type island region at active area two ends respectively in electronics and hole.The distribution of charge carrier in multi-quantum pit structure mainly decided by the transport property in electronics and hole.For electronics, the hole has much bigger effective mass and much lower mobility, and therefore, in each quantum well of active area, the hole is difficult to be transported in the quantum well away from p type island region.Like this, the distribution of electronics and hole is very uneven in each quantum well of active area with regard to having caused, and the luminous intensity of LED is mainly by the distribution decision in hole.Hole concentration is the highest in the quantum well of close p type island region, to luminous contribution maximum; Increase along with injection current, charge carrier that can't be compound near N type district quantum well can accumulate near in the quantum well of p type island region, the probability that electronics is revealed from active area increases, thereby reduce the internal quantum efficiency of device greatly, this also is to cause one of LED device reason that efficient obviously descends under big electric current.
Reveal away from active area in order to stop a large amount of electronics; usually can adopt the electronic barrier layer of an energy gap in the existing LED structure greater than the quantum well barrier layer; about existing LED structure; please refer to Fig. 1; Fig. 1 is the profile of existing LED structure; as shown in Figure 1; existing LED structure comprises substrate 101; the low temperature buffer layer 102 that on described substrate 101, forms successively; plain nitride layer 103; N type electron injecting layer 104; multiple quantum well active layer 105; electronic barrier layer 106; and P type hole injection layer 107; wherein; described N type electron injecting layer 104 links to each other with N type electrode 108; be formed with transparent electrode layer 109 on the described P type hole injection layer 107, preparation has P type electrode 110 on the described transparent electrode layer 109.
Wherein, described multiple quantum well active layer 105 comprises a plurality of quantum well, if the number of described quantum well is n (n 〉=1), the energy gap of the potential barrier of described quantum well (B1, B2 ... Bn-1) keep identical from N type electron injecting layer to P type hole injection layer, be B1=B2=...=Bn-1, and the energy gap EB of described electronic barrier layer 106 greater than the energy gap of the potential barrier of described quantum well (B1, B2 ... Bn-1), as shown in Figure 2.
By an electronic barrier layer is set in the LED structure, and make the energy gap of the energy gap of described electronic barrier layer greater than the potential barrier of the quantum well in the described Multiple Quantum Well active area, thereby can stop electronics from active area, to be revealed, thereby can improve the internal quantum efficiency of LED device to a certain extent.
Yet, though the LED structure of prior art has adopted electronic barrier layer, understand some electronics and from multiple quantum well active layer, leak, thus the internal quantum efficiency of reduction device.
Therefore, be necessary existing nitride LED structure is improved.
Summary of the invention
The object of the present invention is to provide a kind of nitride LED structure and preparation method thereof, to improve the performance of nitride LED.
For addressing the above problem, the present invention proposes a kind of nitride LED structure, this nitride LED structure comprises N type electron injecting layer at least, P type hole injection layer and be clipped in described N type electron injecting layer and described P type hole injection layer between multiple quantum well active layer, and be provided with an electronic barrier layer between described multiple quantum well active layer and the described P type hole injection layer, the additional quantum well of the P type that also is provided with between described electronic barrier layer and the described P type hole injection layer, the energy gap of the additional quantum well of described P type is more than or equal to the energy gap of the potential well of the quantum well in the described multiple quantum well active layer.
Optionally, the energy gap of the additional quantum well of described P type is less than the energy gap of described electronic barrier layer, and the energy gap of the additional quantum well of described P type is less than the energy gap of described P type hole injection layer.
Optionally, the energy gap of the potential barrier of the energy gap of the energy gap of described N type electron injecting layer, P type hole injection layer and the quantum well in the multiple quantum well active layer is all greater than the energy gap of the potential well of the quantum well in the described multiple quantum well active layer.
Optionally, the additional quantum well of described N type electron injecting layer, P type hole injection layer, multiple quantum well active layer, electronic barrier layer and P type is by Al
xGa
yIn
1-x-yN forms, wherein, and 0＜x＜1,0＜x+y＜1.
Optionally, the energy gap of the additional quantum well of described P type is by regulating Al
xGa
yIn
1-x-yAlloying component among the N changes, and increases the component of Al in the alloy, and the energy gap of the additional quantum well of described P type broadens, and increases the component of In in the alloy, and the energy gap of the additional quantum well of described P type narrows down.
Optionally, the energy gap of the additional quantum well of described P type changes by the thickness of regulating the additional quantum well of described P type, increase the thickness of the additional quantum well of described P type, the energy gap of the additional quantum well of described P type narrows down, reduce the thickness of the additional quantum well of described P type, the energy gap of the additional quantum well of described P type broadens.
Optionally, the thickness of the additional quantum well of described P type changes by the growth time of regulating the additional quantum well of described P type, increase the growth time of the additional quantum well of described P type, the thickness of the additional quantum well of described P type increases, reduce the growth time of the additional quantum well of described P type, the thickness of the additional quantum well of described P type reduces.
Optionally, low temperature buffer layer and plain nitride layer that this nitride LED structure also comprises substrate, grows successively on described substrate, be formed with described N type electron injecting layer, described multiple quantum well active layer, described electronic barrier layer, the additional quantum well of described P type and described P type hole injection layer on the described plain nitride layer successively, described N type electron injecting layer links to each other with N type electrode, be formed with transparent electrode layer on the described P type hole injection layer, preparation has P type electrode on the described transparent electrode layer.
Simultaneously, for addressing the above problem, the present invention also proposes a kind of preparation method of nitride LED structure, and this method comprises the steps:
Substrate is provided;
On described substrate, form low temperature buffer layer, plain nitride layer, N type electron injecting layer, multiple quantum well active layer, electronic barrier layer, the additional quantum well of P type and P type hole injection layer successively, wherein, the energy gap of the additional quantum well of described P type is more than or equal to the energy gap of the potential well of the quantum well in the described multiple quantum well active layer;
The described P type of etching hole injection layer, described P type additional quantum well, described electronic barrier layer and described multiple quantum well active layer form an important actor face, and expose described N type electron injecting layer successively, preparation N type electrode on the N type electron injecting layer that exposes;
Preparation transparent electrode layer and P type electrode on the described P type hole injection layer after the etching.
Optionally, the energy gap of the additional quantum well of described P type is less than the energy gap of described electronic barrier layer, and the energy gap of the additional quantum well of described P type is less than the energy gap of described P type hole injection layer.
Optionally, the energy gap of the potential barrier of the energy gap of the energy gap of described N type electron injecting layer, P type hole injection layer and the quantum well in the multiple quantum well active layer is all greater than the energy gap of the potential well of the quantum well in the described multiple quantum well active layer.
Optionally, the additional quantum well of described N type electron injecting layer, P type hole injection layer, multiple quantum well active layer, electronic barrier layer and P type is by Al
xGa
yIn
1-x-yN forms, wherein, and 0＜x＜1,0＜x+y＜1.
Optionally, the energy gap of the additional quantum well of described P type is by regulating Al
xGa
yIn
1-x-yAlloying component among the N changes, and increases the component of Al in the alloy, and the energy gap of the additional quantum well of described P type broadens, and increases the component of In in the alloy, and the energy gap of the additional quantum well of described P type narrows down.
Optionally, the energy gap of the additional quantum well of described P type changes by the thickness of regulating the additional quantum well of described P type, increase the thickness of the additional quantum well of described P type, the energy gap of the additional quantum well of described P type narrows down, reduce the thickness of the additional quantum well of described P type, the energy gap of the additional quantum well of described P type broadens.
Optionally, the thickness of the additional quantum well of described P type changes by the growth time of regulating the additional quantum well of described P type, increase the growth time of the additional quantum well of described P type, the thickness of the additional quantum well of described P type increases, reduce the growth time of the additional quantum well of described P type, the thickness of the additional quantum well of described P type reduces.
Compared with prior art, nitride LED structure provided by the invention, it is provided with on the basis of electronic barrier layer between multiple quantum well active layer and P type hole injection layer, the additional quantum well of the P type of between electronic barrier layer and P type hole injection layer, setting up, and the energy gap of the additional quantum well of described P type is more than or equal to the energy gap of the potential well of the quantum well in the described multiple quantum well active layer, thereby make the electronics that leaks from multiple quantum well active layer the additional quantum well of described P type with hole-recombination, further improve the combined efficiency in electronics and hole, improved the internal quantum efficiency and the luminous intensity of nitride LED.
Compared with prior art, the preparation method of nitride LED structure provided by the invention, by between electronic barrier layer and P type hole injection layer, setting up the additional quantum well of a P type, and the energy gap of the additional quantum well of described P type is more than or equal to the energy gap of the potential well of the quantum well in the described multiple quantum well active layer, thereby make the electronics that leaks from multiple quantum well active layer the additional quantum well of described P type with hole-recombination, further improve the combined efficiency in electronics and hole, improved the internal quantum efficiency and the luminous intensity of nitride LED.
Description of drawings
Fig. 1 is the profile of existing LED structure;
Fig. 2 can be with schematic diagram for existing LED structure;
The profile of the nitride LED structure that Fig. 3 provides for the embodiment of the invention;
Can be with schematic diagram for first kind of the nitride LED structure that Fig. 4 provides for the embodiment of the invention;
Can be with schematic diagram for second kind of the nitride LED structure that Fig. 5 provides for the embodiment of the invention.
Embodiment
Nitride LED structure that the present invention is proposed below in conjunction with the drawings and specific embodiments and preparation method thereof is described in further detail.According to the following describes and claims, advantages and features of the invention will be clearer.It should be noted that accompanying drawing all adopts very the form of simplifying and all uses non-ratio accurately, only be used for conveniently, the purpose of the aid illustration embodiment of the invention lucidly.
Core concept of the present invention is, a kind of nitride LED structure is provided, it is provided with on the basis of electronic barrier layer between multiple quantum well active layer and P type hole injection layer, the additional quantum well of the P type of between electronic barrier layer and P type hole injection layer, setting up, and the energy gap of the additional quantum well of described P type is more than or equal to the energy gap of the potential well of the quantum well in the described multiple quantum well active layer, thereby make the electronics that leaks from multiple quantum well active layer the additional quantum well of described P type with hole-recombination, further improve the combined efficiency in electronics and hole, improved the internal quantum efficiency and the luminous intensity of nitride LED; Simultaneously, the present invention also provides a kind of preparation method of nitride LED structure, by between electronic barrier layer and P type hole injection layer, setting up the additional quantum well of a P type, and the energy gap of the additional quantum well of described P type is more than or equal to the energy gap of the potential well of the quantum well in the described multiple quantum well active layer, thereby make the electronics that leaks from multiple quantum well active layer the additional quantum well of described P type with hole-recombination, further improve the combined efficiency in electronics and hole, improved the internal quantum efficiency and the luminous intensity of nitride LED.
Please refer to Fig. 3, the profile of the nitride LED structure that Fig. 3 provides for the embodiment of the invention, as shown in Figure 3, the nitride LED structure that the embodiment of the invention provides comprises substrate 201, the low temperature buffer layer 202 that on described substrate 201, forms successively, plain nitride layer 203, N type electron injecting layer 204, multiple quantum well active layer 205, electronic barrier layer 206, additional quantum well 207 of P type and P type hole injection layer 208, wherein, described N type electron injecting layer 204 links to each other with N type electrode 209, be formed with transparent electrode layer 210 on the described P type hole injection layer 208, preparation has P type electrode 211 on the described transparent electrode layer 210; The energy gap of the additional quantum well 207 of described P type is more than or equal to the energy gap of the potential well of the quantum well in the described multiple quantum well active layer 205.
The nitride LED structure that the embodiment of the invention provides, by between electronic barrier layer 206 and P type hole injection layer 208, setting up the additional quantum well 207 of a P type, and the energy gap of the additional quantum well 207 of described P type is more than or equal to the energy gap of the potential well of the quantum well in the described multiple quantum well active layer 205, thereby make the electronics that leaks from multiple quantum well active layer 205 the additional quantum well 207 of described P type with hole-recombination, further improve the combined efficiency in electronics and hole, improved the internal quantum efficiency and the luminous intensity of nitride LED.
Further, the energy gap of the additional quantum well 207 of described P type is less than the energy gap of described electronic barrier layer 206, and the energy gap of the additional quantum well 207 of described P type is less than the energy gap of described P type hole injection layer 208; Thereby can collect the electronics that from described multiple quantum well active layer 205, leaks effectively.
Further, the energy gap of the potential barrier of the energy gap of the energy gap of described N type electron injecting layer 204, P type hole injection layer 208 and the quantum well in the multiple quantum well active layer 205 is all greater than the energy gap of the potential well of the quantum well in the described multiple quantum well active layer 205.
Further, the additional quantum well 207 of described N type electron injecting layer 204, P type hole injection layer 208, multiple quantum well active layer 205, electronic barrier layer 206 and P type is by Al
xGa
yIn
1-x-yN forms, wherein, and 0＜x＜1,0＜x+y＜1.
Further, the energy gap of the additional quantum well 207 of described P type is by regulating Al
xGa
yIn
1-x-yAlloying component among the N changes, and increases the component of Al in the alloy, and the energy gap of the additional quantum well 207 of described P type broadens, and increases the component of In in the alloy, and the energy gap of the additional quantum well 207 of described P type narrows down.
Further, the energy gap of the additional quantum well 207 of described P type changes by the thickness of regulating the additional quantum well 207 of described P type, increase the thickness of the additional quantum well 207 of described P type, the energy gap of the additional quantum well 207 of described P type narrows down, reduce the thickness of the additional quantum well 207 of described P type, the energy gap of the additional quantum well 207 of described P type broadens.This is because quantum limitation effect, the change of the thickness of the additional quantum well 207 of described P type can cause the change of the ground state transition energy level (m=1) of the additional quantum well 207 of described P type, increase the thickness of the additional quantum well 207 of described P type, the ground state transition energy level (m=1) of the additional quantum well 207 of described P type diminishes, reduce the thickness of the additional quantum well 207 of described P type, the ground state transition energy level (m=1) of the additional quantum well 207 of described P type becomes big.Wherein, the thickness of the additional quantum well 207 of described P type changes by the growth time of regulating the additional quantum well 207 of described P type, increase the growth time of the additional quantum well 207 of described P type, the thickness of the additional quantum well 207 of described P type increases, reduce the growth time of the additional quantum well 207 of described P type, the thickness of the additional quantum well 207 of described P type reduces.
The band structure of the nitride LED structure that provides about the embodiment of the invention please refer to Fig. 4 to Fig. 5, wherein, can be with schematic diagram for first kind of the nitride LED structure that Fig. 4 provides for the embodiment of the invention, can be with schematic diagram for second kind of the nitride LED structure that Fig. 5 provides for the embodiment of the invention, to shown in Figure 5, the band structure of the nitride LED structure that the embodiment of the invention provides mainly contains following two kinds of forms as Fig. 4:
(1) energy gap of the additional quantum well 207 of described P type equals the energy gap of the potential well of the quantum well in the described multiple quantum well active layer 205.In embodiments of the present invention, if the number of described quantum well is n (n 〉=1), (W1, W2, W3...Wn) is identical for the energy gap of the potential well of quantum well, and the energy gap FW of the additional quantum well 207 of P type equals the energy gap (W1, W2, W3...Wn) of the potential well of the quantum well in the described multiple quantum well active layer 205.In this case, only need to guarantee that the growth conditions of the additional quantum well 207 of described P type is identical with the growth conditions of the quantum well in the described multiple quantum well active layer 205, and constitute identical the getting final product of alloying component of alloying component and the nitride of the described multiple quantum well active layer 205 of formation of the nitride of the additional quantum well 207 of described P type.Need to prove, for block electrons effectively leaks from described multiple quantum well active layer 205, in each structure sheaf of the nitride LED structure that constitutes the embodiment of the invention, the energy gap EB of described electronic barrier layer 206 is the wideest, as shown in Figure 4; Under the situation that the energy gap of the potential well of the quantum well in the energy gap of the additional quantum well 207 of described P type and described multiple quantum well active layer 205 equates, the effect of the additional quantum well 207 of described P type mainly is to collect the electronics that leaks from described multiple quantum well active layer 205, and it is compound to make that the described electronics that leaks carries out in additional quantum well 207 of described P type and hole, thereby improves the luminous efficiency of LED structure;
(2) energy gap of the additional quantum well 207 of described P type is greater than the energy gap of the potential well of the quantum well in the described multiple quantum well active layer 205.In embodiments of the present invention, if the number of described quantum well is n (n 〉=1), (W1, W2, W3...Wn) is identical for the energy gap of the potential well of quantum well, and the energy gap FW of the additional quantum well 207 of P type is greater than the energy gap (W1, W2, W3...Wn) of the potential well of the quantum well in the described multiple quantum well active layer 205.At this moment, can be by regulating the alloying component in the nitride that constitutes the additional quantum well 207 of described P type or regulating the growth time of the additional quantum well 207 of described P type, so that the energy gap of the additional quantum well 207 of described P type is greater than the energy gap of the potential well of the quantum well in the described multiple quantum well active layer 205.And because described P type adds the energy gap of the energy gap of quantum well 207 greater than the potential well of the quantum well in the described multiple quantum well active layer 205, the ground state transition energy level (m=1) of the additional quantum well 207 of described P type is higher than the potential well ground state transition energy level (m=1) of the quantum well in the described multiple quantum well active layer 205.Need to prove, for block electrons effectively leaks from described multiple quantum well active layer 205, in each structure sheaf of the nitride LED structure that constitutes the embodiment of the invention, the energy gap EB of described electronic barrier layer 206 is the wideest, as shown in Figure 5.Under the situation of energy gap greater than the energy gap of the potential well of the quantum well in the described multiple quantum well active layer 205 of the additional quantum well 207 of described P type, the effect of the additional quantum well 207 of described P type is to collect the electronics that leaks from described multiple quantum well active layer 205 on the one hand, makes the described electronics that leaks carry out compound in the additional quantum well 207 of described P type with the hole; On the other hand, hole in the additional quantum well 207 of described P type can also enter in the described multiple quantum well active layer 205 by the quantum tunneling effect, in described multiple quantum well active layer 205 with electron recombination, thereby the electronics that has further reduced in the multiple quantum well active layer 205 is revealed, and has improved the both hole and electron combined efficiency; Thereby improve the luminous efficiency of LED structure.
In conjunction with Fig. 1, the preparation method of the nitride LED structure that the embodiment of the invention provides comprises the steps:
On described substrate 201, form low temperature buffer layer 202, plain nitride layer 203, N type electron injecting layer 204, multiple quantum well active layer 205, electronic barrier layer 206, the additional quantum well 207 of P type and P type hole injection layer 208 successively, wherein, the energy gap of the additional quantum well 207 of described P type is more than or equal to the energy gap of the potential well of the quantum well in the described multiple quantum well active layer 205;
The described P type of etching hole injection layer 208, described P type add quantum well 207, described electronic barrier layer 206 and described multiple quantum well active layer 205 successively, form an important actor face, and expose described N type electron injecting layer 204, preparation N type electrode 209 on the N type electron injecting layer 204 that exposes;
Preparation transparent electrode layer 210 and P type electrode 211 on the described P type hole injection layer 208 after the etching.
Further, the energy gap of the additional quantum well 207 of described P type is less than the energy gap of described electronic barrier layer 206, and the energy gap of the additional quantum well 207 of described P type is less than the energy gap of described P type hole injection layer 208; Thereby can collect the electronics that from described multiple quantum well active layer 205, leaks effectively.
Further, the energy gap of the potential barrier of the energy gap of the energy gap of described N type electron injecting layer 204, P type hole injection layer 208 and the quantum well in the multiple quantum well active layer 205 is all greater than the energy gap of the potential well of the quantum well in the described multiple quantum well active layer 205.
Further, the additional quantum well 207 of described N type electron injecting layer 204, P type hole injection layer 208, multiple quantum well active layer 205, electronic barrier layer 206 and P type is by Al
xGa
yIn
1-x-yN forms, wherein, and 0＜x＜1,0＜x+y＜1.
Further, the energy gap of the additional quantum well 207 of described P type is by regulating Al
xGa
yIn
1-x-yAlloying component among the N changes, and increases the component of Al in the alloy, and the energy gap of the additional quantum well 207 of described P type broadens, and increases the component of In in the alloy, and the energy gap of the additional quantum well 207 of described P type narrows down.
Further, the energy gap of the additional quantum well 207 of described P type changes by the thickness of regulating the additional quantum well 207 of described P type, increase the thickness of the additional quantum well 207 of described P type, the energy gap of the additional quantum well 207 of described P type narrows down, reduce the thickness of the additional quantum well 207 of described P type, the energy gap of the additional quantum well 207 of described P type broadens.This is because quantum limitation effect, the change of the thickness of the additional quantum well 207 of described P type can cause the change of the ground state transition energy level (m=1) of the additional quantum well 207 of described P type, increase the thickness of the additional quantum well 207 of described P type, the ground state transition energy level (m=1) of the additional quantum well 207 of described P type diminishes, reduce the thickness of the additional quantum well 207 of described P type, the ground state transition energy level (m=1) of the additional quantum well 207 of described P type becomes big.Wherein, the thickness of the additional quantum well 207 of described P type changes by the growth time of regulating the additional quantum well 207 of described P type, increase the growth time of the additional quantum well 207 of described P type, the thickness of the additional quantum well 207 of described P type increases, reduce the growth time of the additional quantum well 207 of described P type, the thickness of the additional quantum well 207 of described P type reduces.
The band structure of the nitride LED structure that provides about the embodiment of the invention please refer to Fig. 4 to Fig. 5, wherein, can be with schematic diagram for first kind of the nitride LED structure that Fig. 4 provides for the embodiment of the invention, can be with schematic diagram for second kind of the nitride LED structure that Fig. 5 provides for the embodiment of the invention, to shown in Figure 5, the band structure of the nitride LED structure that the embodiment of the invention provides mainly contains following two kinds of forms as Fig. 4:
(1) energy gap of the additional quantum well 207 of described P type equals the energy gap of the potential well of the quantum well in the described multiple quantum well active layer 205.In embodiments of the present invention, if the number of described quantum well is n (n 〉=1), (W1, W2, W3...Wn) is identical for the energy gap of the potential well of quantum well, and the energy gap FW of the additional quantum well 207 of P type equals the energy gap (W1, W2, W3...Wn) of the potential well of the quantum well in the described multiple quantum well active layer 205.In this case, only need to guarantee that the growth conditions of the additional quantum well 207 of described P type is identical with the growth conditions of the quantum well in the described multiple quantum well active layer 205, and constitute identical the getting final product of alloying component of alloying component and the nitride of the described multiple quantum well active layer 205 of formation of the nitride of the additional quantum well 207 of described P type.Need to prove, for block electrons effectively leaks from described multiple quantum well active layer 205, in each structure sheaf of the nitride LED structure that constitutes the embodiment of the invention, the energy gap EB of described electronic barrier layer 206 is the wideest, as shown in Figure 4; Under the situation that the energy gap of the potential well of the quantum well in the energy gap of the additional quantum well 207 of described P type and described multiple quantum well active layer 205 equates, the effect of the additional quantum well 207 of described P type mainly is to collect the electronics that leaks from described multiple quantum well active layer 205, and it is compound to make that the described electronics that leaks carries out in additional quantum well 207 of described P type and hole, thereby improves the luminous efficiency of LED structure;
(2) energy gap of the additional quantum well 207 of described P type is greater than the energy gap of the potential well of the quantum well in the described multiple quantum well active layer 205.In embodiments of the present invention, if the number of described quantum well is n (n 〉=1), (W1, W2, W3...Wn) is identical for the energy gap of the potential well of quantum well, and the energy gap FW of the additional quantum well 207 of P type is greater than the energy gap (W1, W2, W3...Wn) of the potential well of the quantum well in the described multiple quantum well active layer 205.At this moment, can be by regulating the alloying component in the nitride that constitutes the additional quantum well 207 of described P type or regulating the growth time of the additional quantum well 207 of described P type, so that the energy gap of the additional quantum well 207 of described P type is greater than the energy gap of the potential well of the quantum well in the described multiple quantum well active layer 205.And because described P type adds the energy gap of the energy gap of quantum well 207 greater than the potential well of the quantum well in the described multiple quantum well active layer 205, the ground state transition energy level (m=1) of the additional quantum well 207 of described P type is higher than the potential well ground state transition energy level (m=1) of the quantum well in the described multiple quantum well active layer 205.Need to prove, for block electrons effectively leaks from described multiple quantum well active layer 205, in each structure sheaf of the nitride LED structure that constitutes the embodiment of the invention, the energy gap EB of described electronic barrier layer 206 is the wideest, as shown in Figure 5.Under the situation of energy gap greater than the energy gap of the potential well of the quantum well in the described multiple quantum well active layer 205 of the additional quantum well 207 of described P type, the effect of the additional quantum well 207 of described P type is to collect the electronics that leaks from described multiple quantum well active layer 205 on the one hand, makes the described electronics that leaks carry out compound in the additional quantum well 207 of described P type with the hole; On the other hand, hole in the additional quantum well 207 of described P type can also enter in the described multiple quantum well active layer 205 by the quantum tunneling effect, in described multiple quantum well active layer 205 with electron recombination, thereby the electronics that has further reduced in the multiple quantum well active layer 205 is revealed, and has improved the both hole and electron combined efficiency; Thereby improve the luminous efficiency of LED structure.
In a specific embodiment of the present invention, energy gap (the W1 of the potential well of the quantum well in the described multiple quantum well active layer 205, W2, W3...Wn) identical, the energy gap FW of the additional quantum well 207 of described P type is greater than the energy gap (W1 of the potential well of the quantum well in the described multiple quantum well active layer 205, W2, W3...Wn), yet should be realized that, the present invention is not as limit, energy gap (the W1 of the potential well of the quantum well in the described multiple quantum well active layer 205, W2, W3...Wn) can also be inequality, only the energy gap FW of the additional quantum well 207 of the described P type of need gets final product greater than the energy gap Wn of the potential well of n quantum well in the multiple quantum well active layer 205 immediate with it.
In sum, the invention provides a kind of nitride LED structure, it is provided with on the basis of electronic barrier layer between multiple quantum well active layer and P type hole injection layer, the additional quantum well of the P type of between electronic barrier layer and P type hole injection layer, setting up, and the energy gap of the additional quantum well of described P type is more than or equal to the energy gap of the potential well of the quantum well in the described multiple quantum well active layer, thereby make the electronics that leaks from multiple quantum well active layer the additional quantum well of described P type with hole-recombination, further improve the combined efficiency in electronics and hole, improved the internal quantum efficiency and the luminous intensity of nitride LED; Simultaneously, the present invention also provides a kind of preparation method of nitride LED structure, by between electronic barrier layer and P type hole injection layer, setting up the additional quantum well of a P type, and the energy gap of the additional quantum well of described P type is more than or equal to the energy gap of the potential well of the quantum well in the described multiple quantum well active layer, thereby make the electronics that leaks from multiple quantum well active layer the additional quantum well of described P type with hole-recombination, further improve the combined efficiency in electronics and hole, improved the internal quantum efficiency and the luminous intensity of nitride LED.
Obviously, those skilled in the art can carry out various changes and modification to invention and not break away from the spirit and scope of the present invention.Like this, if of the present invention these are revised and modification belongs within the scope of claim of the present invention and equivalent technologies thereof, then the present invention also is intended to comprise these changes and modification interior.
Claims (15)
1. nitride LED structure, at least comprise N type electron injecting layer, P type hole injection layer and be clipped in described N type electron injecting layer and described P type hole injection layer between multiple quantum well active layer, and be provided with an electronic barrier layer between described multiple quantum well active layer and the described P type hole injection layer, it is characterized in that, the additional quantum well of the P type that also is provided with between described electronic barrier layer and the described P type hole injection layer, the energy gap of the additional quantum well of described P type is more than or equal to the energy gap of the potential well of the quantum well in the described multiple quantum well active layer.
2. nitride LED structure as claimed in claim 1, it is characterized in that, the energy gap of the additional quantum well of described P type is less than the energy gap of described electronic barrier layer, and the energy gap of the additional quantum well of described P type is less than the energy gap of described P type hole injection layer.
3. nitride LED structure as claimed in claim 2, it is characterized in that the energy gap of the energy gap of the energy gap of described N type electron injecting layer, P type hole injection layer and the potential barrier of the quantum well in the multiple quantum well active layer is all greater than the energy gap of the potential well of the quantum well in the described multiple quantum well active layer.
4. nitride LED structure as claimed in claim 3 is characterized in that, the additional quantum well of described N type electron injecting layer, P type hole injection layer, multiple quantum well active layer, electronic barrier layer and P type is by Al
xGa
yIn
1-x-yN forms, wherein, and 0＜x＜1,0＜x+y＜1.
5. nitride LED structure as claimed in claim 4 is characterized in that, the energy gap of the additional quantum well of described P type is by regulating Al
xGa
yIn
1-x-yAlloying component among the N changes, and increases the component of Al in the alloy, and the energy gap of the additional quantum well of described P type broadens, and increases the component of In in the alloy, and the energy gap of the additional quantum well of described P type narrows down.
6. nitride LED structure as claimed in claim 4, it is characterized in that, the energy gap of the additional quantum well of described P type changes by the thickness of regulating the additional quantum well of described P type, increase the thickness of the additional quantum well of described P type, the energy gap of the additional quantum well of described P type narrows down, reduce the thickness of the additional quantum well of described P type, the energy gap of the additional quantum well of described P type broadens.
7. nitride LED structure as claimed in claim 6, it is characterized in that, the thickness of the additional quantum well of described P type changes by the growth time of regulating the additional quantum well of described P type, increase the growth time of the additional quantum well of described P type, the thickness of the additional quantum well of described P type increases, reduce the growth time of the additional quantum well of described P type, the thickness of the additional quantum well of described P type reduces.
8. nitride LED structure as claimed in claim 1, it is characterized in that, this nitride LED structure also comprises substrate, the low temperature buffer layer and the plain nitride layer of on described substrate, growing successively, be formed with described N type electron injecting layer on the described plain nitride layer successively, described multiple quantum well active layer, described electronic barrier layer, additional quantum well of described P type and described P type hole injection layer, described N type electron injecting layer links to each other with N type electrode, be formed with transparent electrode layer on the described P type hole injection layer, preparation has P type electrode on the described transparent electrode layer.
9. the preparation method of a nitride LED structure is characterized in that, comprises the steps:
Substrate is provided;
On described substrate, form low temperature buffer layer, plain nitride layer, N type electron injecting layer, multiple quantum well active layer, electronic barrier layer, the additional quantum well of P type and P type hole injection layer successively, wherein, the energy gap of the additional quantum well of described P type is more than or equal to the energy gap of the potential well of the quantum well in the described multiple quantum well active layer;
The described P type of etching hole injection layer, described P type additional quantum well, described electronic barrier layer and described multiple quantum well active layer form an important actor face, and expose described N type electron injecting layer successively, preparation N type electrode on the N type electron injecting layer that exposes;
Preparation transparent electrode layer and P type electrode on the described P type hole injection layer after the etching.
10. the preparation method of nitride LED structure as claimed in claim 9, it is characterized in that, the energy gap of the additional quantum well of described P type is less than the energy gap of described electronic barrier layer, and the energy gap of the additional quantum well of described P type is less than the energy gap of described P type hole injection layer.
11. the preparation method of nitride LED structure as claimed in claim 10, it is characterized in that the energy gap of the energy gap of the energy gap of described N type electron injecting layer, P type hole injection layer and the potential barrier of the quantum well in the multiple quantum well active layer is all greater than the energy gap of the potential well of the quantum well in the described multiple quantum well active layer.
12. the preparation method of nitride LED structure as claimed in claim 11 is characterized in that, the additional quantum well of described N type electron injecting layer, P type hole injection layer, multiple quantum well active layer, electronic barrier layer and P type is by Al
xGa
yIn
1-x-yN forms, wherein, and 0＜x＜1,0＜x+y＜1.
13. the preparation method of nitride LED structure as claimed in claim 12 is characterized in that, the energy gap of the additional quantum well of described P type is by regulating Al
xGa
yIn
1-x-yAlloying component among the N changes, and increases the component of Al in the alloy, and the energy gap of the additional quantum well of described P type broadens, and increases the component of In in the alloy, and the energy gap of the additional quantum well of described P type narrows down.
14. the preparation method of nitride LED structure as claimed in claim 12, it is characterized in that, the energy gap of the additional quantum well of described P type changes by the thickness of regulating the additional quantum well of described P type, increase the thickness of the additional quantum well of described P type, the energy gap of the additional quantum well of described P type narrows down, reduce the thickness of the additional quantum well of described P type, the energy gap of the additional quantum well of described P type broadens.
15. the preparation method of nitride LED structure as claimed in claim 14, it is characterized in that, the thickness of the additional quantum well of described P type changes by the growth time of regulating the additional quantum well of described P type, increase the growth time of the additional quantum well of described P type, the thickness of the additional quantum well of described P type increases, reduce the growth time of the additional quantum well of described P type, the thickness of the additional quantum well of described P type reduces.
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