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CN102169845B - Multilayer hybrid synchronous bonding structure and method for three-dimensional packaging - Google Patents

Multilayer hybrid synchronous bonding structure and method for three-dimensional packaging Download PDF

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Publication number
CN102169845B
CN102169845B CN2011100426439A CN201110042643A CN102169845B CN 102169845 B CN102169845 B CN 102169845B CN 2011100426439 A CN2011100426439 A CN 2011100426439A CN 201110042643 A CN201110042643 A CN 201110042643A CN 102169845 B CN102169845 B CN 102169845B
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Prior art keywords
bonded
hybrid
bonding
metal
substrate
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CN102169845A (en
Inventor
于大全
王惠娟
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National Center for Advanced Packaging Co Ltd
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Institute of Microelectronics of CAS
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Priority to CN2011100426439A priority Critical patent/CN102169845B/en
Publication of CN102169845A publication Critical patent/CN102169845A/en
Priority to PCT/CN2012/071116 priority patent/WO2012113297A1/en
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
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    • B23K1/00—Soldering, e.g. brazing, or unsoldering
    • B23K1/0008—Soldering, e.g. brazing, or unsoldering specially adapted for particular articles or work
    • B23K1/0016—Brazing of electronic components
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    • B—PERFORMING OPERATIONS; TRANSPORTING
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    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
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Abstract

The invention relates to a multilayer hybrid synchronous bonding structure and a method for three-dimensional packaging. The method comprises the following steps: forming a hard metal tapered array on the surface of a metal bonding pad of a substrate to be mixed and bonded; forming a soft metal layer on the surface of the metal bonding pad of the other substrate to be mixed and bonded; forming a dielectric adhesion layer on the surfaces of the nonmetal bonding pads of the two substrates to be mixed and bonded; aligning the hard metal conical array with the soft metal layer, heating and pressurizing to ensure that the conical metal array is inserted into the soft metal layer, and simultaneously combining the dielectric adhesion layers to form a mixed pre-bonding structure; and heating to enable the conical metal array inserted into the soft metal layer to form an intermetallic compound, and curing and combining the dielectric adhesion layer. Compared with the traditional bonding method, the method has the advantages of high yield, bonding time saving, cost reduction and product reliability improvement.

Description

A kind of multilayer for three-dimension packaging is mixed synchronous bonding structure and method
Technical field
The present invention relates to a kind of multilayer for three-dimension packaging and mix synchronous bonding structure and method, belong to the microelectronic packaging technology field.
Background technology
Along with people to the requirement of the electronic product development to directions such as miniaturization, multi-functional, environment-friendly types, people make great efforts to seek to do electronic system more little, integrated level is more and more higher, function is done more and more, and is more and more stronger.Many new technologies, new material and new design have been produced thus, for example technology such as three-dimensional stacked encapsulation is exactly typical case's representative of these technology, this structure can be directly be stacked up a plurality of bare chips or the substrate mode by bonding, be implemented in the metal interconnection structure on the three-dimensional, reduce interconnected distance greatly, improve transmission speed, thereby realize integrated on three-dimensional structure of a system or certain function.And wherein bonding techniques is to realize that three-dimensional stacked encapsulating structure than essential, also is technology emphasis and the difficult point of most critical, and bonding method commonly used has direct oxidation thing bonding, and metal bonding such as copper copper bonding also have bonding such as the BCB of special organic polymer.Hybrid bonded between the different materials also arranged simultaneously, and as the hybrid bonded method of polymer and metal etc., these methods all are by under high temperature and the high pressure condition usually, in layer bonding.So all there are some following problems in these traditional bonding methods:
1) condition of bonding as temperature and pressure, can influence reliability and the productive rate of structure itself to the influence of structure itself to a certain extent; 2) because piling up of multilayer need in layer be removed bonding, bonding next time will inevitably impact the last time, as bonding precision and bond strength etc. certain reducing arranged, just repeatedly bonding all can have reducing to a certain degree than the intensity of the precision of word bonding and combination; 3) in addition owing to there is a time of waiting for intensification and cooling in the bonding process, this will certainly influence its whole bonding speed and output for the repeatedly bonding structure that needs volume production, thereby increases its cost greatly.
Because this traditional method complexity, there are a lot of difficulties, rate of finished products and the reliability of product caused great influence.Various new technologies, material and bonding method also progressively are suggested and discuss, for example adopt the hybrid bonded adhesion that adds strong bonding, hybrid bonded generally referring to adopts metal material and dielectric adhesion layer to mix to come bonding simultaneously in the substrate upper and lower surface for the treatment of bonding, hybrid bonded employing commonly used different as BCB, SU-8, these several polymeric materials such as AL-polymer and PI are used as the dielectric adhesion layer when hybrid bonded, after bonding, metal adopts thermocompression bonding or eutectic, adhesion layer is then by together settable cementitious after the hot pressing, thus the adhesion of raising bonding.Adopt special bonding structure to reduce the various low-temperature bonding methods of bonding temperature, as Hitachi Ltd the controllable bonding method of a kind of low temperature that the shape by design soldered ball and pad proposes is proposed, pad on the bonding upper strata powers on and is plated to the spike structure of projection, and leave blind hole at lower floor's pad of bonding, in the time of last up and down two-layer bonding, form a kind of structure of mechanical bond between nail and the hole, thereby can reach the purpose of low-temperature bonding.And Belgian microelectronics center also proposes a kind of optionally hybrid bonded method, be mainly used in a plurality of different nude films simultaneously with the hybrid bonded method of substrate bonding, also be to have utilized two kinds of different materials, namely the hybrid bonded technology of dielectric material and metal material reaches a kind of synchronous effect.
Also have a kind of result of material and method that attribute carries out bonding utilized, adopt two kinds of different metals at pad up and down, wherein go up bond pad surface formation Microstar cone structure, directly insert in the soft metal of lower floor and finish machinery.US6204089B1 mentions as patent, forms a kind of taper soldered ball on the surface of pad, penetrating be used to doing non-conductive layer bonding or insulation, and then further comes bonding, links to each other with electrode, constitutes the electricity connection; And EP480194A also mentions, and forms the taper of highly about 60um～80um by electrochemical method at metallic surface, and there is the metal interconnection of this structure on surperficial or two surfaces, to form firm syndeton; US6761803B2 directly after silica-based surface applies protection by photoetching, places the ion beam reaction chamber with silicon chip in addition, and forms the microprotrusion structure by appropriate condition control on the surface of silicon, and the formation of this structure and application are achieved.But these above methods all exist certain defective and problem, as are difficult to scale of mass production, and each method has only solved a side problem, still exist the bonding time long, problems such as bonding temperature height, this has had a strong impact on production efficiency and product reliability, causes silicon wafer warpage etc.
Summary of the invention
The bonding time that the present invention is directed to existing bonding structure and method existence is long, and the bonding temperature height has had a strong impact on production efficiency and product reliability, causes the deficiency of silicon wafer warpage, provides a kind of multilayer for three-dimension packaging to mix synchronous bonding structure and method.
The technical scheme that the present invention solves the problems of the technologies described above is as follows: a kind of multilayer for three-dimension packaging is mixed synchronous bonding method and is comprised:
Step 1, in the structure of n wafer or chip vertical stacking any interconnect interface include bonding to be mixed on the following substrate of substrate and bonding to be mixed, on the following substrate of substrate on the described bonding to be mixed and bonding to be mixed, form through hole respectively, form the metal interconnection structure after filling metal in the described through hole, surface in described metal interconnection structure forms metal pad, wherein, n 〉=2;
Step 2, the surface of substrate metal pad forms hard metal level on described bonding to be mixed;
Step 3, form hard metal taper salient point array on the surface of described hard metal level;
Step 4, form the soft metal layer that is constituted by solderable material on the surface of the following substrate metal pad of described bonding to be mixed;
Step 5, the surface of the nonmetal pad of following substrate of substrate and bonding to be mixed forms the dielectric adhesion layer on described bonding to be mixed;
Step 6, with the following substrate alignment of last substrate and the bonding to be mixed of described bonding to be mixed;
Step 7, after the following substrate alignment of substrate on the described bonding to be mixed and bonding to be mixed, be higher than in the temperature range of dielectric adhesion layer softening temperature being lower than the solderable material fusing point, apply 5,000 newton～90,000 newton's pressure, the pressure size depends on the size of material and the bonding substrate of dielectric adhesion layer, adopt BCB to do adhesion layer as the wafer to eight inch, need apply the pressure of about 10KN, hard metal taper salient point array on the last substrate of described bonding to be mixed is inserted in the soft metal layer of following substrate of bonding to be mixed, dielectric adhesion layer on the following substrate of the dielectric adhesion layer on the last substrate of described bonding to be mixed and bonding to be mixed also combines simultaneously, thereby forms a firm pre-bonding structure;
Step 8, described firm pre-bonding structure is refluxed under the temperature that is higher than the solderable material fusing point, concrete counterflow condition depends on the composition of solder, as the lead-free brazing reflux temperature that contains SnCu and SnAgCu is 210 ℃～230 ℃, time is 1 minute～2 minutes, as the lead-free brazing reflux temperature that contains In is 130 ℃～180 ℃, time is 1 minute～2 minutes, make the hard metal taper salient point array that inserts in the soft metal layer form the metallurgical binding alloy, the dielectric adhesion layer on the following substrate of the dielectric adhesion layer on the last substrate of described bonding to be mixed and bonding to be mixed also is cured simultaneously.
Be that bonding method of the present invention can be applicable to wafer to the bonding of wafer (Wafer-to-Wafer), chip is to the bonding of wafer (Chip-to-Wafer), and chip is to the bonding (Chip-to-Chip) of chip, perhaps earlier the multilayer nude film is bonded together in advance, again with nude film and wafer bonding together, at last will come the complex form of various ways such as hybrid bonded to realize three-dimensional stacked between the multilayer wafer again.
On the basis of technique scheme, the present invention can also do following improvement.
Further, the following substrate of the last substrate/bonding to be mixed of bonding to be mixed is silicon substrate, compound, pottery or glass substrate in the described step 1.
Further, in the described step 3 roughness of taper salient point array-profile arithmetic average error Ra greater than 0.1um, less than 10um.
Further, taper salient point array is made of any hard metal in nickel, copper, tungsten and the iron in the described step 3, and its hardness is greater than 500HV.
Further, soft metal layer is made of any solderable material among Sn, In, SnIn, SnAg, SnCu and the SnAgCu in the described step 4, and its hardness is less than 100HV.
Further, the dielectric adhesion layer is made of benzocyclobutene resin B CB or polyimides PI in the described step 5.
Further, apply 5,000 newton～90,000 newton's pressure in the described step 7.
Further, mix in the synchronous bonding in described multilayer, after a described n wafer or chip are aimed at successively, carry out repeatedly pre-bonding junction and lump together by adding gentle pressurization for n-1 time.
Further, mix in the synchronous bonding in described multilayer, after a described n wafer or chip are aimed at successively, carry out once pre-bonding junction and lump together by once adding gentle pressurization.
The present invention also provides a kind of technical scheme that solves the problems of the technologies described above as follows: a kind ofly mix the multilayer that synchronous bonding method makes by the above-mentioned multilayer that is used for three-dimension packaging and mix synchronous bonding structure.
The invention has the beneficial effects as follows: the present invention realizes the hybrid stack-ups bonding techniques by improving technology and material design, and core concept is to utilize hybrid bonded method, namely uses polymer latex and interim mechanical means in conjunction with solder joint.This method is compared with traditional bonding method, plurality of advantages is arranged, at first, be different from traditional bonding that adopts when three-dimensional stacked in layer, every multiple pileup one deck substrate, or nude film, all need to carry out bonding process one time, namely all need once to pass through high temperature and graceful process, and the present invention adopts all substrates bonding simultaneously, the cost of can saving time, improved the efficient of bonding greatly, improve the rate of finished products of structure, improve reliability of products, the temperature requirement that needs in the time of can reducing bonding by mechanical bond in addition; The second, the present invention adopts hybrid bonded method, after forming the key of metallic compound at welding disking area, also forms bonding between the adhesion layer at non-welding disking area, has increased bond strength and the reliability of bonding; The 3rd, in pre-bonding process, adopt the method in the hard metal surface taper salient point array insertion soft metal, can form firm pre-bonding structure, thereby guarantee the three-dimensional required precision of bonding synchronously of total.
Description of drawings
Fig. 1 is the up and down structural representation of bond pad surface behind the bonding of the embodiment of the invention;
Fig. 2 a to Fig. 2 h is the structural representation of finishing hybrid bonded technical process correspondence between the embodiment of the invention two-layer substrate;
Fig. 3 a to Fig. 3 c is the 3-dimensional multi-layered structural representation that piles up the technical process correspondence of bonding of the embodiment of the invention;
Fig. 4 finishes the structural representation after the three-dimensional structure for other multilayers of the embodiment of the invention are hybrid bonded.
Embodiment
Below in conjunction with accompanying drawing principle of the present invention and feature are described, institute gives an actual example and only is used for explaining the present invention, is not for limiting scope of the present invention.
Fig. 1 is the up and down structural representation of bond pad surface behind the bonding of the embodiment of the invention, be example with silica-based version, and it is interconnected to form at the silica-based version formation metal throuth hole of each layer, and form special bonding structure as shown in Figure 1 in the surface pads of metal interconnection structure up and down, as can be seen from the figure at substrate up and down layer of metal pad 101 is arranged, be preferably metallic copper, can form hard metal level 102 at last pad on demand, can be crome metal, titanium, nickel etc. contact the favorable conductive metal with pad, then the taper salient point array 103 that forms in last bond pad surface, form one deck soft metal at following pad simultaneously, as metallic tin 104.
Fig. 2 a to Fig. 2 h is the structural representation of finishing hybrid bonded technical process correspondence between the embodiment of the invention two-layer substrate:
Step 1 shown in Fig. 2 a, is example with silica-based version, and the following substrate 202 of substrate 201 and bonding to be mixed forms the TSV holes to form metal interconnection structure 203 on bonding to be mixed, and as the substrate of bonding to be mixed, the TSV hole is generally metallic copper;
Step 2 shown in Fig. 2 b, forms metal pad 204 at the metal interconnection body structure surface, and this metal is generally copper or nickel gold, and the formation method can be plating etc., forms hard metal level on the surface of metal pad 204;
Step 3, as Fig. 2 c, treat bonding on the surface of the hard metal level of substrate form the hard metal taper of one deck salient point array 205;
Step 4 as Fig. 2 d, forms certain thickness soft metal 206 in the following substrate metal bond pad surface for the treatment of bonding;
Step 5 is as Fig. 2 e, at the certain thickness dielectric adhesion layer 207 of nonmetal bond pad surface coating formation of the substrate up and down for the treatment of bonding;
Step 6 as Fig. 2 f, will be treated the substrate alignment up and down of bonding;
Step 7, as Fig. 2 g, after treating the substrate alignment up and down of bonding, be bonded together in advance at low temperatures, at this moment the taper salient point array on the pad 205 inserts in the soft metal 206 of following pad, upper and lower medium adhesion layer 207 also combines simultaneously, so then can form a firm pre-bonding structure;
Step 8 as Fig. 2 h, will be treated the backflow at high temperature of the substrate up and down of bonding, metal part is divided form metallurgical binding alloy 208, and the adhesion layer part also is cured.
The composition of metallurgical binding alloy 208 is intermetallic compound, and its type is relevant with the selection of hard metal material with concrete solderable material.According to soft metal layer and hard metal taper salient point array thickness and reflux temperature, there are two kinds of possibilities in the solderable material in the soft metal layer after backflow, namely change intermetallic compound fully into or also have remaining solder.
After simultaneously also can adopting above-mentioned method that MULTILAYER SUBSTRATE is bonded together in advance, reflux by certain temperature and pressure, make the pad place form the metallic compound bonding, the combination that also forms in the medium adhesive area, thereby realizing the synchronous bonding of total, is the 3-dimensional multi-layered structural representation that piles up hybrid bonded technical process correspondence of the embodiment of the invention as Fig. 3 a to Fig. 3 c.Wherein Fig. 3 a is for to pile up the MULTILAYER SUBSTRATE crystal circle structure schematic diagram of pre-bonding, wherein each treats the bonded substrate wafer, as first bonded substrate 310 to be mixed, second bonded substrate 320 to be mixed, n bonded substrate 3n0 to be mixed its structure is arranged, shown in Fig. 3 b, the structural representation of Xing Chenging is shown in Fig. 3 c at last.
Will be in addition, this substrate is silicon-based substrate, also can be the three-dimensional structure that other treat bonding, as direct chip-to-chip, can be with the bonding structure more than two layers and two layers, use perhaps combines these structures, the concrete structure schematic diagram as shown in Figure 4, wherein 410 for treating the substrate of bonding, and 420 is that one three layers bonding piles up good structure, and 430 is that a two-layer bonding piles up good structure.
The above only is preferred embodiment of the present invention, and is in order to limit the present invention, within the spirit and principles in the present invention not all, any modification of doing, is equal to replacement, improvement etc., all should be included within protection scope of the present invention.

Claims (8)

1.一种用于三维封装的多层混合同步键合方法，其特征在于，所述同步键合方法包括：1. A multi-layer hybrid synchronous bonding method for three-dimensional packaging, characterized in that, the synchronous bonding method comprises: 步骤1、在n个晶圆或者芯片垂直堆叠的结构中任一个互连界面上均包括待混合键合的上衬底和待混合键合的下衬底，在所述待混合键合的上衬底和待混合键合的下衬底上分别形成通孔，所述通孔内填充金属后形成金属互联结构，在所述金属互联结构的表面形成金属焊盘，其中，n≥2；Step 1. An upper substrate to be hybrid-bonded and a lower substrate to be hybrid-bonded are included on any interconnection interface in a vertically stacked structure of n wafers or chips, and the upper substrate to be hybrid-bonded Through holes are respectively formed on the substrate and the lower substrate to be mixed and bonded, the through holes are filled with metal to form a metal interconnection structure, and a metal pad is formed on the surface of the metal interconnection structure, wherein n≥2; 步骤2、在所述待混合键合的上衬底金属焊盘的表面形成硬金属层；Step 2, forming a hard metal layer on the surface of the upper substrate metal pad to be hybrid bonded; 步骤3、在所述硬金属层的表面形成硬金属锥形凸点阵列结构，其中所述锥形凸点阵列结构的轮廓算术平均偏差大于0.1um，小于10um，且所述锥形凸点阵列结构由镍、铜、钨和铁中任一种硬金属构成，其硬度大于500HV；Step 3, forming a hard metal tapered bump array structure on the surface of the hard metal layer, wherein the arithmetic average deviation of the contour of the tapered bump array structure is greater than 0.1um and less than 10um, and the tapered bump array structure The structure is composed of any hard metal among nickel, copper, tungsten and iron, and its hardness is greater than 500HV; 步骤4、在所述待混合键合的下衬底金属焊盘的表面形成由软钎焊材料构成的软金属层；Step 4, forming a soft metal layer made of soldering material on the surface of the lower substrate metal pad to be mixed and bonded; 步骤5、在所述待混合键合的上衬底和待混合键合的下衬底非金属焊盘的表面形成介电粘附层；Step 5, forming a dielectric adhesion layer on the surface of the upper substrate to be hybrid bonded and the lower substrate non-metallic pad to be hybrid bonded; 步骤6、将所述待混合键合的上衬底和待混合键合的下衬底对准；Step 6, aligning the upper substrate to be hybrid-bonded and the lower substrate to be hybrid-bonded; 步骤7、在所述待混合键合的上衬底和待混合键合的下衬底对准后，在低于软钎焊材料熔点而高于介电粘附层软化温度的温度范围内，施加压力，使所述待混合键合的上衬底上的硬金属锥形凸点阵列结构插入待混合键合的下衬底的软金属层中，同时所述待混合键合的上衬底上的介电粘附层和待混合键合的下衬底上的介电粘附层也结合在一起，从而形成一个稳固的预键合结构；Step 7. After the upper substrate to be hybrid bonded and the lower substrate to be hybrid bonded are aligned, within a temperature range lower than the melting point of the solder material but higher than the softening temperature of the dielectric adhesive layer, Apply pressure so that the hard metal tapered bump array structure on the upper substrate to be hybrid bonded is inserted into the soft metal layer of the lower substrate to be hybrid bonded, while the upper substrate to be hybrid bonded The dielectric adhesive layer on the upper substrate and the dielectric adhesive layer on the lower substrate to be hybrid bonded are also bonded together to form a stable pre-bonded structure; 步骤8、将所述稳固的预键合结构在高于软钎焊材料熔点的温度下进行回流，使插入软金属层中的硬金属锥形凸点阵列结构形成冶金结合合金，同时所述待混合键合的上衬底上的介电粘附层和待混合键合的下衬底上的介电粘附层也固化结合在一起。Step 8. Reflow the stable pre-bonded structure at a temperature higher than the melting point of the solder material, so that the hard metal tapered bump array structure inserted into the soft metal layer forms a metallurgical bonding alloy, and at the same time, the The dielectric adhesive layer on the hybrid bonded upper substrate and the dielectric adhesive layer on the hybrid bonded lower substrate are also solidified and bonded together. 2.根据权利要求1所述的用于三维封装的多层混合同步键合方法，其特征在于，所述步骤1中待混合键合的上衬底/待混合键合的下衬底为硅基板、化合物、陶瓷或者玻璃衬底。2. The multi-layer hybrid simultaneous bonding method for three-dimensional packaging according to claim 1, wherein the upper substrate to be hybrid bonded/the lower substrate to be hybrid bonded in the step 1 is silicon Substrates, compounds, ceramic or glass substrates. 3.根据权利要求1所述的用于三维封装的多层混合同步键合方法，其特征在于，所述步骤4中软金属层由Sn、In、SnIn、SnAg、SnCu和SnAgCu中任一种软钎焊材料构成，其硬度小于100HV。3. The multilayer hybrid synchronous bonding method for three-dimensional packaging according to claim 1, wherein the soft metal layer is made of any soft metal in Sn, In, SnIn, SnAg, SnCu and SnAgCu in the step 4. Composed of brazing materials whose hardness is less than 100HV. 4.根据权利要求1所述的用于三维封装的多层混合同步键合方法，其特征在于，所述步骤5中介电粘附层由苯并环丁烯树脂或者聚酰亚胺构成。4 . The multilayer hybrid simultaneous bonding method for three-dimensional packaging according to claim 1 , wherein the dielectric adhesive layer in step 5 is made of benzocyclobutene resin or polyimide. 5.根据权利要求1所述的用于三维封装的多层混合同步键合方法，其特征在于，所述步骤7中施加5千牛顿～90千牛顿的压力。5 . The multilayer hybrid simultaneous bonding method for three-dimensional packaging according to claim 1 , wherein a pressure of 5 kilonewtons to 90 kilonewtons is applied in the step 7. 6 . 6.根据权利要求1所述的用于三维封装的多层混合同步键合方法，其特征在于，在所述多层混合同步键合中，所述n个晶圆或者芯片依次对准后，通过n-1次加温和加压进行多次预键合结合在一起。6. The multilayer hybrid synchronous bonding method for three-dimensional packaging according to claim 1, characterized in that, in the multilayer hybrid synchronous bonding, after the n wafers or chips are aligned sequentially, Multiple pre-bonds are combined by n-1 times of heating and pressure. 7.根据权利要求1所述的用于三维封装的多层混合同步键合方法，其特征在于，在所述多层混合同步键合中，所述n个晶圆或者芯片依次对准后，通过一次加温和加压进行一次预键合结合在一起。7. The multilayer hybrid synchronous bonding method for three-dimensional packaging according to claim 1, wherein, in the multilayer hybrid synchronous bonding, after the n wafers or chips are aligned sequentially, One pre-bond bonded together by one heat and one pressure. 8.一种由如权利要求1至7任一所述的用于三维封装的多层混合同步键合方法制成的多层混合同步键合结构。8. A multilayer hybrid simultaneous bonding structure made by the multilayer hybrid simultaneous bonding method for three-dimensional packaging according to any one of claims 1 to 7.
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