CN102154688B - Rubrene weak epitaxial growth thin film and application thereof in organic thin-film transistor - Google Patents
Rubrene weak epitaxial growth thin film and application thereof in organic thin-film transistor Download PDFInfo
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- CN102154688B CN102154688B CN201110073179XA CN201110073179A CN102154688B CN 102154688 B CN102154688 B CN 102154688B CN 201110073179X A CN201110073179X A CN 201110073179XA CN 201110073179 A CN201110073179 A CN 201110073179A CN 102154688 B CN102154688 B CN 102154688B
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Abstract
The invention provides a rubrene weak epitaxial growth thin film and an application thereof in an organic thin-film transistor. By utilizing an epitaxial relation between the crystal of an induction layer material and the lattice of a rubrene crystal, rubrene molecules are subjected to epitaxial growth on the surface of a large-area continuous orderly induction layer so as to acquire a high-quality polycrystal thin film. In the invention, the rubrene polycrystal thin film is prepared by utilizing a weak epitaxial growth method and a conventional vacuum deposition technology, the process is simple, and the rubrene thin film prepared through the weak epitaxial growth has the characteristics of larger crystal size and good continuity. With respect to the transmittance spectrum of a 30nm of the rubrene weak epiaxial growth thin film, the light transmittance of the rubrene is larger than 90% in a visible light area and the rubrene weak epiaxial growth thin film can be used as a transparent material. The mobility of a prepared thin-film transistor is up to 1.4-3.6cm<2>/Vs, exceeds the mobility of an amorphous silicon thin-film transistor by 0.7cm<2>/Vs and is 2-5.2 times higher than that of the amorphous silicon.
Description
Technical field
The present invention relates to weak epitaxial growth film and the application of this film in OTFT of rubrene.
Technical background
Rubrene (being commonly called as rubrene), as a kind of organic semiconductor material of high mobility, obtain people's extensive concern recently.Its monocrystalline mobility can reach 15～40cm
2/ Vs (J.Takeya, M.Yamagishi, Y.Tominari, R.Hirahara, Y.Nakazawa, T.Nishikawa, T.Kawase, T.Shimoda, S.Ogawa, Appl.Phys.Lett.2007,90,102120), be the organic semi-conductor maximum of reporting at present.In addition, the band gap of rubrene is larger, and photoabsorption coefficient is lower, and its film can be approximated to be transparent material in visible-range, therefore aspect display driver, has potential application prospect.But adopt the film of this material of traditional vacuum deposition preparation to be generally non-crystalline state, adopt the thin-film transistor performance of this film lower, this has just limited its application.For addressing the above problem, be aided with special method as " hot wall " deposition (Y.Chen in vacuum deposition process, I Shih, Appl.Phys.Lett.2009, 94, 083304), original position vacuum annealing (S.W.Park, S.H Jeong, J.M.Choi, J.M.Hwang, J.H Kim, S.Im, Appl.Phys.Lett.2007, 91, 033506), and slowly spread underlayer temperature (C.H Hsu in deposition process, J.Deng, C.R.Staddon, P.H Beton, Appl.Phys.Lett.2007, 91, 193505), perhaps adopt solution to separate out (N.Stingelin-Stutzmann, E.Smits, H Wondergem, C.Tanase, P.Blom, P.Smith, D.de Leeuw, Nat.Mater.2005, 4, 601) etc. method can obtain the rubrene film of partial crystallization.These method preparation process complexity, the mobility of thin film transistor is usually very low, only has 10
-3～10
-1Cm
2/ Vs.For improving the crystallinity of rubrene film, the method for hetero epitaxy appears adopting, and adopt the monocrystalline of tetracene or pentacene or polycrystal film as substrate induced growth rubrene film (M.Campione, J.Phys.Chem.C.2008,112,16178; J.-H.Seo, D.-S.Park, S.-W.Cho, C.-Y.Kim, W.-C.Jang, C.-N.Whang, K.-H.Yoo, G.-S.Chang, T.Pedersen, A.Moewes, K.-H.Chae, S.-J.Cho, Appl.Phys.Lett.2006,89,163505), but in practical devices, because tetracene or pentacene directly contact with transistorized insulated gate, the device performance be the performance of tetracene or pentacene, can't bring into play the advantage of rubrene high mobility.2010, the people such as Z.F.Li (Z.F.Li, J.Du, Q.Tang, F.Wang, J.B.Xu, J.C.Yu and Q.Miao, Adv.Mater.2010,22,3242) reported and adopted the pentacene quinone to induce the rubrene crystallization as the material of insulation, having obtained mobility is 0.35cm
2The thin film transistor of/Vs, but compare the gap of two magnitudes in addition with its monocrystalline performance.
German advanced material (Haibo Wang, Feng Zhu, Junliang Yang in 2007, Yanhou Geng, DonghangYan, Adv.Mater.2007,19,2168) reported that the mobility of the metal phthalocyanine film that adopts the weak epitaxial growth method to prepare reaches the level of class monocrystalline.Weak epitaxial growth be utilize the inducing layer material and the material lattice of growing on inducing layer between the epitaxial relationship that exists, obtain high quality, the continuous crystallinity film of large size.The method provides possibility for the rubrene film for preparing high mobility.But up to now also not about adopting the rubrene weak epitaxial growth film to prepare transistorized report.
Summary of the invention
For overcoming complex process and the inferior problem of polycrystal film in existing rubrene polycrystal film preparation process, the invention provides a kind of rubrene weak epitaxial growth film.Another object of the present invention is to provide a kind of OTFT that adopts the rubrene weak epitaxial growth film.
Advantage of the present invention is to adopt conventional evaporating deposition technique, utilizes the weak epitaxial growth method to prepare the rubrene polycrystal film, and technique is simple, and gained thin film transistor mobility reaches 2.0cm
2/ Vs, performance surpasses non-crystalline silicon (0.7cm
2/ Vs).
Principle of the present invention is to utilize between the crystal of inducing layer material and rubrene crystal lattices to have epitaxial relationship, and epitaxy is carried out on the rubrene molecule orderly inducing layer surface continuous in big area, thereby obtains high-quality polycrystal film.
I, as shown in Figure 1, the rubrene weak epitaxial growth film the present invention relates to comprises inducing layer 3 and rubrene film 4, has weak epitaxial relationship between the rubrene of the material of described inducing layer 3 and rubrene film 4; Be that Van der Waals force interacts between the material molecule that described weak epitaxial relationship is inducing layer 3 and the rubrene molecule of rubrene film 4, between the material crystals lattice of inducing layer 3 and the rubrene crystal lattices of rubrene film 4, have epitaxial relationship;
The material of described inducing layer 3 is: six biphenyl (p-6P), 2, 7-bis-(4-xenyl)-Fei (BPPh), 2, 7-bis-(4-xenyl)-dibenzothiophen (BPBTB), 2, 6-bis-(4-xenyl)-benzo [1, 2-b:4, 5-b '] two thiophene (BPTBT), 2, 5-bis-(4-xenyl)-[3, 2-b] 1,4-Dithiapentalene (BPTT), 5, 5 '-bis-(4-xenyls)-2, 2 '-bis-thiophene (BP2T), 5, 5 " bis-(4-xenyls)-2, 2 ': 5 ', 2 " tri-thiophene (BP3T), 5, 5 " '-bis-(4-xenyl)-2, 2 ': 5 ', 2 ": 5 ", 2 " thiophene (BP4T) '-tetra-, 1, 1 ': 4 ', 1 ": 4 ", 1 " ': 4 " ', 1 " ": 4 " ", 1 " " ': 4 " " ', 1 " " ": 4 " " ", 1 " " " '-eight biphenyl (p8P), 2, 5-bis-(4-1, 1 ': 4 ', 1 " terphenyl)-thiophene (3PT), 5, 5 '-bis-(4-1, 1 ': 4 ', 1 " terphenyl)-2, 2 '-bis-thiophene (3P2T), 2, 5-bis-(4-1, 1 ': 4 ', 1 " terphenyl)-[3, 2-b] 1,4-Dithiapentalene (3PTT), 2, 7-bis-(4-4 '-the fluorodiphenyl base)-Fei (F2-BPPh), 2, 7-bis-(4-4 '-the fluorodiphenyl base)-dibenzothiophen (F2-BPBTB), 2, 6-bis-(4-4 '-the fluorodiphenyl base)-benzo [1, 2-b:4, 5-b '] two thiophene (F2-BPTBT), 2, 5-bis-(4-4 '-the fluorodiphenyl base)-[3, 2-b] 1,4-Dithiapentalene (F2-BPTT), 5, 5 '-bis-(4-4 '-the fluorodiphenyl base)-2, 2 '-bis-thiophene (F2-BP2T), 5, 5 " bis-(4-4 '-the fluorodiphenyl base)-2, 2 ': 5 ', 2 " tri-thiophene (F2-BP3T), 5, 5 " '-bis-(4-4 '-the fluorodiphenyl base)-2, 2 ': 5 ', 2 ": 5 ", 2 " thiophene (F2-BP4T) '-tetra-, 4, 4 " " '-bis-(4-fluorophenyl)-1, 1 ': 4 ', 1 ": 4 ", 1 " ': 4 " ', 1 " ": 4 " ", 1 " " '-six biphenyl (F2-p8P), 2, 5-bis-(4-4 " fluoro-1, 1 ': 4 ', 1 " terphenyl)-thiophene (F2-3PT), 2, 5-bis-(4-4 " fluoro-1, 1 ': 4 ', 1 " terphenyl)-thiophene (F2-3PT), 2, 5-bis-(4-4 " fluoro-1, 1 ': 4 ', 1 " terphenyl)-[3, 2-b] 1,4-Dithiapentalene (F2-3PTT), 2, 7-bis-(4-3 ', 5 '-bis-fluoro xenyls)-Fei (F4-BPPh), 2, 7-bis-(4-3 ', 5 '-bis-fluoro xenyls)-dibenzothiophen (F4-BPBTB), 2, 6-bis-(4-3 ', 5 '-bis-fluoro xenyls)-benzo [1, 2-b:4, 5-b '] two thiophene (F4-BPTBT), 2, 5-bis-(4-3 ', 5 '-bis-fluoro xenyls)-[3, 2-b] 1,4-Dithiapentalene (F4-BPTT), 5, 5 '-bis-(4-3 ', 5 '-bis-fluoro xenyls)-2, 2 '-bis-thiophene (F4-BP2T), 5, 5 " bis-(4-3 ', 5 '-bis-fluoro xenyls)-2, 2 ': 5 ', 2 " tri-thiophene (F4-BP3T), 5, 5 " '-bis-(4-3 ', 5 '-bis-fluoro xenyls)-2, 2 ': 5 ', 2 ": 5 ", 2 " thiophene (F4-BP4T) '-tetra-, 4, 4 " " '-bis-(3, 5-phenyl-difluoride base)-1, 1 ': 4 ', 1 ": 4 ", 1 " ': 4 " ', 1 " ": 4 " ", 1 " " '-six biphenyl (F4-p8P), 2, 5-bis-(4-3 ", 5 " bis-fluoro-1, 1 ': 4 ', 1 " terphenyl)-thiophene (F4-3PT), 5, 5 '-bis-(4-3 ", 5 " bis-fluoro-1, 1 ': 4 ', 1 " terphenyl)-2, 2 '-bis-thiophene (F4-3P2T) and 2, 5-bis-(4-3 ", 5 " bis-fluoro-1, 1 ': 4 ', 1 " terphenyl)-[3, 2-b] a kind of in 1,4-Dithiapentalene (F4-3PTT),
The thickness of described inducing layer 3 is not less than 2 nanometers, is not more than 12 nanometers; The thickness of rubrene film 4 is not less than 5 nanometers, is not more than 50 nanometers.
The transistor of the employing rubrene weak epitaxial growth film of II, the first structure that the present invention relates to, as shown in Figure 6.
The transistor of the employing rubrene weak epitaxial growth film of the first structure the present invention relates to, is characterized in that, it is to be connected and composed in turn by gate electrode 1, insulated gate 2, inducing layer 3, rubrene film 4 and source/drain electrode 6;
There is weak epitaxial relationship between described inducing layer 3 and rubrene film 4; Be that Van der Waals force interacts between the material molecule that described weak epitaxial relationship is inducing layer 3 and the rubrene molecule of rubrene film 4, between the material crystals lattice of inducing layer 3 and the rubrene crystal lattices of rubrene film 4, have epitaxial relationship;
The thickness of the material of described inducing layer 3 and thickness, rubrene film 4 is same I all.
The transistor of the employing rubrene weak epitaxial growth film of III, the second structure that the present invention relates to, as shown in Figure 8.
The transistor of the employing rubrene weak epitaxial growth film of the second structure the present invention relates to, it is characterized in that, it is by gate electrode 1, insulated gate 2, and inducing layer 3, rubrene film 4 connect in turn, and source/drain electrode 6 directly contacts formation with inducing layer 3, red lustrous and transparent alkene film 4; The thickness of the material of described inducing layer 3 and thickness, rubrene film 4 and the same II of the combination principle between the two.
The transistor of the employing rubrene weak epitaxial growth film of IV, the third structure that the present invention relates to, as shown in figure 10.
The third the present invention relates to adopts the transistor of rubrene weak epitaxial growth film, it is characterized in that, it is to be connected and composed in turn by gate electrode 1, insulated gate 2, inducing layer 3, rubrene film 4, organic semiconductor layer 5 and source/drain electrode 6;
The thickness of the material of described inducing layer 3 and thickness, rubrene film 4 and the same II of the combination principle between the two;
The thickness of described organic semiconductor layer 5 is not less than 2 nanometers, is not more than 20 nanometers; Material is metal-free phthalocyanine (H
2Pc), metallic phthalocyanine and functionalized variant thereof;
A kind of in the preferred CuPc of described containing metal phthalocyanine (CuPc), Phthalocyanine Zinc (ZnPc), Cobalt Phthalocyanine (CoPc), Nickel Phthalocyanine (NiPc), ferrous phthalocyanine (FePc), Tin Phthalocyanine (SnPc) and phthalocyanine plumbous (PbPc);
The preferred TiOPc of functionalized variant (TiOPc) of described metallic phthalocyanine, ranadylic phthalocyanine (VOPc), phthalocyanine chlorine aluminium (AlClPc), phthalocyanine oxygen tin (SnOPc), phthalocyanine dichloro tin (SnCl
2Pc), perfluoro CuPc (F
16CuPc), perfluoro Phthalocyanine Zinc (F
16ZnPc), perfluoro Cobalt Phthalocyanine (F
16CoPc), perfluoro Nickel Phthalocyanine (F
16NiPc) and perfluoro ferrous phthalocyanine (F
16CuPc) a kind of in.
The transistor of the employing rubrene weak epitaxial growth film of V, the 4th kind of structure the present invention relates to, as shown in figure 12.
(D) transistor of the employing rubrene weak epitaxial growth film of the 4th kind of structure the present invention relates to, it is characterized in that, it is by gate electrode 1, insulated gate 2, inducing layer 3, rubrene film 4, organic semiconductor layer 5 connect in turn, and source/drain electrode 6 directly contacts formation with rubrene film 4, organic semiconductor layer 5; The thickness of the material of described inducing layer 3 and thickness, rubrene film 4 and the same II of the combination principle between the two; The same IV of the material of described organic semiconductor layer 5 and thickness.
The preparation method of VI, the rubrene weak epitaxial growth film that the present invention relates to is as follows:
(1) at substrate surface vacuum moulding machine inducing layer 3; The same I of the material of described inducing layer 3 and thickness;
(2) at inducing layer 3 surface vacuum deposition rubrene films 4, the same I of the thickness of described rubrene film 4;
Wherein, the base vacuum degree is not less than 1 * 10
-3Pascal (Pa), sedimentation rate 1 nm/minute.
The transistorized preparation method of VII, the employing rubrene weak epitaxial growth film that the present invention relates to is as follows:
The transistorized preparation method of the employing rubrene weak epitaxial growth film of a, the first structure that the present invention relates to is as follows:
(1) surface vacuum at transistor insulation grid 2 deposits inducing layer 3, the same I of the material of described inducing layer 3 and thickness;
(2) at inducing layer 3 surface vacuum deposition rubrene films 4, the same I of thickness thickness of described rubrene film 4;
(3) adopt bushing mask method vacuum deposited metal electrode 6 on rubrene film 4 surfaces;
Wherein, the base vacuum degree is not less than 1 * 10
-3Pa, sedimentation rate 1 nm/minute, the sedimentation rate of metal electrode is 20 nm/minute.
The transistorized preparation method of the employing rubrene weak epitaxial growth film of b, the second structure that the present invention relates to is as follows:
(1) surface vacuum at transistor insulation grid 2 deposits inducing layer 3, the same I of the material of described inducing layer 3 and thickness;
(2) adopt bushing mask method vacuum deposited metal electrode 6 on inducing layer 3 surfaces;
(3) at inducing layer 3 surface vacuum deposition rubrene films 4, the same I of the thickness of described rubrene film 4;
Wherein, the base vacuum degree is not less than 1 * 10
-3Pa, sedimentation rate 1 nm/minute, the sedimentation rate of metal electrode is 20 nm/minute, because metal electrode 6 deposits prior to rubrene film 4, the thin film deposition of part rubrene is arranged on metal electrode while therefore depositing rubrene film 4, this impact on transistorized device performance can be ignored.
The transistorized preparation method of the employing rubrene weak epitaxial growth film of c, the third structure that the present invention relates to is as follows:
(1) surface vacuum at transistor insulation grid 2 deposits inducing layer 3, the same I of the material of described inducing layer 3 and thickness;
(2) at inducing layer 3 surface vacuum deposition rubrene films 4, the same I of the thickness of described rubrene film 4;
(3) at rubrene film 4 surface vacuum deposition organic semiconductor layers 5, the same IV of the material of described organic semiconductor layer 5 and thickness;
(4) adopt bushing mask method vacuum deposited metal electrode 6 on organic semiconductor layer 5 surfaces;
Wherein, the base vacuum degree is not less than 1 * 10
-3Pa, sedimentation rate 1 nm/minute, the sedimentation rate of metal electrode is 20 nm/minute.
The transistorized preparation method of the employing rubrene weak epitaxial growth film of d, the 4th kind of structure the present invention relates to is as follows:
(1) surface vacuum at transistor insulation grid 2 deposits inducing layer 3, the same I of the material of described inducing layer 3 and thickness;
(2) at inducing layer 3 surface vacuum deposition rubrene films 4, the same I of the thickness of described rubrene film 4;
(3) adopt bushing mask method vacuum deposited metal electrode 6 on rubrene film 4 surfaces.
(4) at rubrene film 4 surface vacuum deposition organic semiconductor layers 5, the same IV of the material of described organic semiconductor layer 5 and thickness;
Wherein, the base vacuum degree is not less than 1 * 10
-3Pa, sedimentation rate 1 nm/minute, the sedimentation rate of metal electrode is 20 nm/minute, because metal electrode 6 deposits prior to organic semiconductor layer 5, the deposition of material that while therefore depositing organic semiconductor layer 5, part organic semiconductor layer 5 is arranged is on metal electrode, and this impact on transistorized device performance can be ignored.
Beneficial effect: the present invention relates to weak epitaxial growth film and the application of this film in OTFT of rubrene.Have epitaxial relationship between the crystal that utilizes the inducing layer material of the present invention and rubrene crystal lattices, epitaxy is carried out on the rubrene molecule orderly inducing layer surface continuous in big area, thereby obtains high-quality polycrystal film.
The present invention adopts conventional evaporating deposition technique, utilizes the weak epitaxial growth method to prepare the rubrene polycrystal film, and technique is simple, adopt weak epitaxial growth the rubrene film crystalline size larger, film continuity is good.The transmitted spectrum of 30 nanometer rubrene weak epitaxial growth films, in visible region, the transmittance of rubrene is greater than 90%, can be used as transparent material and uses.
Gained thin film transistor mobility performance surpasses non-crystalline silicon (0.7cm
2/ Vs), be non-crystalline silicon 2-5.2 doubly
The transistorized mobility of the employing rubrene weak epitaxial growth film of the first structure the present invention relates to is 2.0-3.2 square centimeter volt
-1Second
-1, threshold voltage is the 20-36 volt, switch current ratio is 10
5-10
7.
Transistorized formation and the device performance of the employing rubrene weak epitaxial growth film of the second structure the present invention relates to, mobility is 1.93-3.6 square centimeter volt
-1Second
-1, threshold voltage is the 20-36 volt, switch current ratio is 10
5-10
7.
Transistorized formation and the device performance of the employing rubrene weak epitaxial growth film of the third structure the present invention relates to, mobility is 2.0-3.6 square centimeter volt
-1Second
-1, threshold voltage is the 21-36 volt, switch current ratio is 10
4-10
6.
Transistorized formation and the device performance of the employing rubrene weak epitaxial growth film of the 4th kind of structure the present invention relates to, mobility is 1.4-3.5 square centimeter volt
-1Second
-1, threshold voltage is the 21-47 volt, switch current ratio is 10
6-10
7.
The accompanying drawing explanation
Fig. 1 is the structural representation of the rubrene weak epitaxial growth film that the present invention relates to.Wherein, (3) are inducing layers, and (4) are the rubrene films, and (3) and (4) connect and compose the rubrene weak epitaxial growth film related to of the present invention in turn.
Fig. 2 is the atomic power shape appearance figure of rubrene p-nJie Erjiguan non-epitaxial p-n junction diode growing film.
Fig. 3 is the atomic power shape appearance figure of rubrene weak epitaxial growth film.
Fig. 4 is the selected area electron diffraction of rubrene weak epitaxial growth film.
Fig. 5 is the transmitted spectrum of 30 nanometer rubrene weak epitaxial growth films.
Fig. 6 is that the first the present invention relates to adopts the transistorized structural representation of rubrene weak epitaxial growth film.Wherein, the 1st, gate electrode, the 2nd, insulated gate, the 3rd, inducing layer, the 4th, rubrene film, the 6th, source/drain electrode.
Fig. 7 is that the first that the present invention of employing Fig. 6 configuration relates to adopts the transistorized transfer characteristic curve of rubrene weak epitaxial growth film, and wherein gate electrode 1 is heavily doped Si, and insulated gate 2 is SiO of thermooxidizing
2, inducing layer 3 is p-6P, thickness 4 nanometers, and thickness 20 nanometers of rubrene film 4, source/drain electrode adopts gold electrode.
Fig. 8 is that the second the present invention relates to adopts the transistorized structural representation of rubrene weak epitaxial growth film.Wherein, the 1st, gate electrode, the 2nd, insulated gate, the 3rd, inducing layer, the 4th, rubrene film, the 6th, source/drain electrode.
Fig. 9 is that the second that the present invention of employing Fig. 8 configuration relates to adopts the transistorized transfer characteristic curve of rubrene weak epitaxial growth film, and wherein gate electrode 1 is heavily doped Si, and insulated gate 2 is SiO of thermooxidizing
2, inducing layer 3 is BPPh, thickness 6 nanometers, and thickness 25 nanometers of rubrene film 4, source/drain electrode adopts gold electrode.
Figure 10 is the transistorized structural representation of the third employing rubrene weak epitaxial growth film the present invention relates to.Wherein, the 1st, gate electrode, the 2nd, insulated gate, the 3rd, inducing layer, the 4th, rubrene film, the 5th, organic semiconductor layer, the 6th, source/drain electrode.
Figure 11 is the transistorized transfer characteristic curve of the third employing rubrene weak epitaxial growth film that the present invention of employing Figure 10 configuration relates to, and wherein gate electrode 1 is heavily doped Si, and insulated gate 2 is SiO of thermooxidizing
2, inducing layer 3 is 3PT, thickness 8 nanometers, and thickness 15 nanometers of rubrene film 4, organic semiconductor layer 5 is CuPc, thickness 10 nanometers, source/drain electrode adopts gold electrode.
Figure 12 is the 4th kind of transistorized structural representation of employing rubrene weak epitaxial growth film the present invention relates to.Wherein, the 1st, gate electrode, the 2nd, insulated gate, the 3rd, inducing layer, the 4th, rubrene film, the 5th, organic semiconductor, the 6th, source/drain electrode.
Figure 13 is the 4th kind of transistorized transfer characteristic curve of employing rubrene weak epitaxial growth film that the present invention of employing Figure 12 configuration relates to, and wherein gate electrode 1 is heavily doped Si, and insulated gate 2 is SiO of thermooxidizing
2, inducing layer 3 is F2-BPTT, thickness 10 nanometers, and the thickness of rubrene film 4 is 30 nanometers, organic semiconductor layer 5 is VOPc, thickness 5 nanometers, source/drain electrode adopts gold electrode.。
Embodiment
Below adopt rubrene in all embodiment, without the phthalocyanine (H of metal
2Pc), Phthalocyanine Zinc (ZnPc), CuPc (CuPc), Cobalt Phthalocyanine (CoPc), ferrous phthalocyanine (FePc), Nickel Phthalocyanine (NiPc), Tin Phthalocyanine (SnPc), phthalocyanine plumbous (PbPc), TiOPc (TiOPc), ranadylic phthalocyanine (VOPc), phthalocyanine chlorine aluminium (AlClPc), phthalocyanine oxygen tin (SnOPc), phthalocyanine dichloro tin (SnCl
2Pc), perfluoro CuPc (F
16CuPc), perfluoro Phthalocyanine Zinc (F
16ZnPc), perfluoro Cobalt Phthalocyanine (F
16CoPc), perfluoro Nickel Phthalocyanine (F
16NiPc), perfluoro ferrous phthalocyanine (F
16FePc), six biphenyl (p-6P), 5,5 '-bis-(4-xenyl)-2,2 '-bis-thiophene (BP2T), be commerical prod, buys by using after vacuum-sublimation purification secondary.The surface heat growth forms one deck SiO
2Heavily doped silicon chip, metallic gold (Au) is commercially produced product, directly use after buying.
The material 2 of inducing layer 3, 7-bis-(4-xenyl)-Fei (BPPh), 2, 7-bis-(4-xenyl)-dibenzothiophen (BPBTB), 2, 6-bis-(4-xenyl)-benzo [1, 2-b:4, 5-b '] two thiophene (BPTBT), 2, 5-bis-(4-xenyl)-[3, 2-b] 1,4-Dithiapentalene (BPTT), 5, 5 " bis-(4-xenyls)-2, 2 ': 5 ', 2 " tri-thiophene (BP3T), 5, 5 " '-bis-(4-xenyl)-2, 2 ': 5 ', 2 ": 5 ", 2 " thiophene (BP4T) '-tetra-, 1, 1 ': 4 ', 1 ": 4 ", 1 " ': 4 " ', 1 " ": 4 " ", 1 " " ': 4 " " ', 1 " " ": 4 " " ", 1 " " " '-eight biphenyl (p8P), 2, 5-bis-(4-1, 1 ': 4 ', 1 " terphenyl)-thiophene (3PT), 5, 5 '-bis-(4-1, 1 ': 4 ', 1 " terphenyl)-2, 2 '-bis-thiophene (3P2T), 2, 5-bis-(4-1, 1 ': 4 ', 1 " terphenyl)-[3, 2-b] 1,4-Dithiapentalene (3PTT), 2, 7-bis-(4-4 '-the fluorodiphenyl base)-Fei (F2-BPPh), 2, 7-bis-(4-4 '-the fluorodiphenyl base)-dibenzothiophen (F2-BPBTB), 2, 6-bis-(4-4 '-the fluorodiphenyl base)-benzo [1, 2-b:4, 5-b '] two thiophene (F2-BPTBT), 2, 5-bis-(4-4 '-the fluorodiphenyl base)-[3, 2-b] 1,4-Dithiapentalene (F2-BPTT), 5, 5 '-bis-(4-4 '-the fluorodiphenyl base)-2, 2 '-bis-thiophene (F2-BP2T), 5, 5 " bis-(4-4 '-the fluorodiphenyl base)-2, 2 ': 5 ', 2 " tri-thiophene (F2-BP3T), 5, 5 " '-bis-(4-4 '-the fluorodiphenyl base)-2, 2 ': 5 ', 2 ": 5 ", 2 " thiophene (F2-BP4T) '-tetra-, 4, 4 " " '-bis-(4-fluorophenyl)-1, 1 ': 4 ', 1 ": 4 ", 1 " ': 4 " ', 1 " ": 4 " ", 1 " " '-six biphenyl (F2-p8P), 2, 5-bis-(4-4 " fluoro-1, 1 ': 4 ', 1 " terphenyl)-thiophene (F2-3PT), 2, 5-bis-(4-4 " fluoro-1, 1 ': 4 ', 1 " terphenyl)-thiophene (F2-3PT), 2, 5-bis-(4-4 " fluoro-1, 1 ': 4 ', 1 " terphenyl)-[3, 2-b] 1,4-Dithiapentalene (F2-3PTT), 2, 7-bis-(4-3 ', 5 '-bis-fluoro xenyls)-Fei (F4-BPPh), 2, 7-bis-(4-3 ', 5 '-bis-fluoro xenyls)-dibenzothiophen (F4-BPBTB), 2, 6-bis-(4-3 ', 5 '-bis-fluoro xenyls)-benzo [1, 2-b:4, 5-b '] two thiophene (F4-BPTBT), 2, 5-bis-(4-3 ', 5 '-bis-fluoro xenyls)-[3, 2-b] 1,4-Dithiapentalene (F4-BPTT), 5, 5 '-bis-(4-3 ', 5 '-bis-fluoro xenyls)-2, 2 '-bis-thiophene (F4-BP2T), 5, 5 " bis-(4-3 ', 5 '-bis-fluoro xenyls)-2, 2 ': 5 ', 2 " tri-thiophene (F4-BP3T), 5, 5 " '-bis-(4-3 ', 5 '-bis-fluoro xenyls)-2, 2 ': 5 ', 2 ": 5 ", 2 " thiophene (F4-BP4T) '-tetra-, 4, 4 " " '-bis-(3, 5-phenyl-difluoride base)-1, 1 ': 4 ', 1 ": 4 ", 1 " ': 4 " ', 1 " ": 4 " ", 1 " " '-six biphenyl (F4-p8P), 2, 5-bis-(4-3 ", 5 " bis-fluoro-1, 1 ': 4 ', 1 " terphenyl)-thiophene (F4-3PT), 5, 5 '-bis-(4-3 ", 5 " bis-fluoro-1, 1 ': 4 ', 1 " terphenyl)-2, 2 '-bis-thiophene (F4-3P2T) and 2, 5-bis-(4-3 ", 5 " bis-fluoro-1, 1 ': 4 ', 1 " terphenyl)-[3, 2-b] 1,4-Dithiapentalene (F4-3PTT) presses Chinese patent, twice rear use of the described method of application number 200910200459 synthetic final vacuum distillation purification.
The preparation method of the rubrene weak epitaxial growth film the present invention relates to is as follows
(1) form one deck SiO in the surface heat growth
2heavily doped silicon chip surface vacuum moulding machine inducing layer 3, the material of described inducing layer 3 is: six biphenyl (p-6P), 2, 7-bis-(4-xenyl)-Fei (BPPh), 2, 7-bis-(4-xenyl)-dibenzothiophen (BPBTB), 2, 6-bis-(4-xenyl)-benzo [1, 2-b:4, 5-b '] two thiophene (BPTBT), 2, 5-bis-(4-xenyl)-[3, 2-b] 1,4-Dithiapentalene (BPTT), 5, 5 '-bis-(4-xenyls)-2, 2 '-bis-thiophene (BP2T), 5, 5 " bis-(4-xenyls)-2, 2 ': 5 ', 2 " tri-thiophene (BP3T), 5, 5 " '-bis-(4-xenyl)-2, 2 ': 5 ', 2 ": 5 ", 2 " thiophene (BP4T) '-tetra-, 1, 1 ': 4 ', 1 ": 4 ", 1 " ': 4 " ', 1 " ": 4 " ", 1 " " ': 4 " " ', 1 " " ": 4 " " ", 1 " " " '-eight biphenyl (p8P), 2, 5-bis-(4-1, 1 ': 4 ', 1 " terphenyl)-thiophene (3PT), 5, 5 '-bis-(4-1, 1 ': 4 ', 1 " terphenyl)-2, 2 '-bis-thiophene (3P2T), 2, 5-bis-(4-1, 1 ': 4 ', 1 " terphenyl)-[3, 2-b] 1,4-Dithiapentalene (3PTT), 2, 7-bis-(4-4 '-the fluorodiphenyl base)-Fei (F2-BPPh), 2, 7-bis-(4-4 '-the fluorodiphenyl base)-dibenzothiophen (F2-BPBTB), 2, 6-bis-(4-4 '-the fluorodiphenyl base)-benzo [1, 2-b:4, 5-b '] two thiophene (F2-BPTBT), 2, 5-bis-(4-4 '-the fluorodiphenyl base)-[3, 2-b] 1,4-Dithiapentalene (F2-BPTT), 5, 5 '-bis-(4-4 '-the fluorodiphenyl base)-2, 2 '-bis-thiophene (F2-BP2T), 5, 5 " bis-(4-4 '-the fluorodiphenyl base)-2, 2 ': 5 ', 2 " tri-thiophene (F2-BP3T), 5, 5 " '-bis-(4-4 '-the fluorodiphenyl base)-2, 2 ': 5 ', 2 ": 5 ", 2 " thiophene (F2-BP4T) '-tetra-, 4, 4 " " '-bis-(4-fluorophenyl)-1, 1 ': 4 ', 1 ": 4 ", 1 " ': 4 " ', 1 " ": 4 " ", 1 " " '-six biphenyl (F2-p8P), 2, 5-bis-(4-4 " fluoro-1, 1 ': 4 ', 1 " terphenyl)-thiophene (F2-3PT), 2, 5-bis-(4-4 " fluoro-1, 1 ': 4 ', 1 " terphenyl)-thiophene (F2-3PT), 2, 5-bis-(4-4 " fluoro-1, 1 ': 4 ', 1 " terphenyl)-[3, 2-b] 1,4-Dithiapentalene (F2-3PTT), 2, 7-bis-(4-3 ', 5 '-bis-fluoro xenyls)-Fei (F4-BPPh), 2, 7-bis-(4-3 ', 5 '-bis-fluoro xenyls)-dibenzothiophen (F4-BPBTB), 2, 6-bis-(4-3 ', 5 '-bis-fluoro xenyls)-benzo [1, 2-b:4, 5-b '] two thiophene (F4-BPTBT), 2, 5-bis-(4-3 ', 5 '-bis-fluoro xenyls)-[3, 2-b] 1,4-Dithiapentalene (F4-BPTT), 5, 5 '-bis-(4-3 ', 5 '-bis-fluoro xenyls)-2, 2 '-bis-thiophene (F4-BP2T), 5, 5 " bis-(4-3 ', 5 '-bis-fluoro xenyls)-2, 2 ': 5 ', 2 " tri-thiophene (F4-BP3T), 5, 5 " '-bis-(4-3 ', 5 '-bis-fluoro xenyls)-2, 2 ': 5 ', 2 ": 5 ", 2 " thiophene (F4-BP4T) '-tetra-, 4, 4 " " '-bis-(3, 5-phenyl-difluoride base)-1, 1 ': 4 ', 1 ": 4 ", 1 " ': 4 " ', 1 " ": 4 " ", 1 " " '-six biphenyl (F4-p8P), 2, 5-bis-(4-3 ", 5 " bis-fluoro-1, 1 ': 4 ', 1 " terphenyl)-thiophene (F4-3PT), 5, 5 '-bis-(4-3 ", 5 " bis-fluoro-1, 1 ': 4 ', 1 " terphenyl)-2, 2 '-bis-thiophene (F4-3P2T) and 2, 5-bis-(4-3 ", 5 " bis-fluoro-1, 1 ': 4 ', 1 " terphenyl)-[3, 2-b] a kind of in 1,4-Dithiapentalene (F4-3PTT),
The thickness of described inducing layer 3 is not less than 2 nanometers, is not more than 12 nanometers;
(2) at inducing layer 3 surface vacuum deposition rubrene films 4, the thickness of described rubrene film 4 is not less than 5 nanometers, is not more than 50 nanometers.
Wherein, the base vacuum degree is not less than 1 * 10
-3Pascal (Pa), sedimentation rate 1 nm/minute.
Fig. 2 forms one deck SiO in the surface heat growth
2The atomic power shape appearance figure of the direct vacuum moulding machine rubrene of heavily doped silicon chip surface film.
Fig. 3 is the atomic power shape appearance figure of rubrene weak epitaxial growth film.Wherein inducing layer is p-6P, thickness 5 nanometers.
Above two figure of contrast can obviously see, the rubrene film crystal size of non-weak epitaxial growth is little, and film continuity is poor, adopt weak epitaxial growth the rubrene film crystalline size larger, film continuity is good.
Fig. 4 is the exemplary electronic diffractogram at p-6P surface weak epitaxial growth rubrene.From indexing, except [001] zone axis diffraction of p-6P, [001] the zone axis diffraction that also comprises rubrene, and there is orientation relationship in both by point diffraction, its epitaxial relationship is: the a* axle of rubrene //the b* axle of p-6P, the b* axle of rubrene //the a* axle of p-6P, between the two for the commensurability extension is arranged.
Fig. 5 is the transmitted spectrum of 30 nanometer rubrene weak epitaxial growth films, and in visible region, the transmittance of rubrene is greater than 90%, can be used as transparent material and uses.
Table 1 provides the composition of a series of rubrene weak epitaxial growth films that the present invention relates to.
Table 1
The transistor of the employing rubrene weak epitaxial growth film of the first structure the present invention relates to, as shown in Figure 6, the preparation method is as follows:
(1) form one deck SiO in the surface heat growth
2Heavily doped silicon chip surface vacuum moulding machine inducing layer 3, the material of described inducing layer 3 is with embodiment 1, thickness is not less than 2 nanometers, is not more than 12 nanometers; Described heavily doped silicon is as transistor gate, SiO
2As transistorized insulated gate;
(2) at inducing layer 3 surface vacuum deposition rubrene films 4, the thickness of described rubrene film 4 is not less than 5 nanometers, is not more than 50 nanometers;
(3) adopt bushing mask method vacuum deposited metal gold electrode 6 on rubrene film 4 surfaces;
Wherein, the base vacuum degree is not less than 1 * 10
-3Pascal (Pa), the sedimentation rate of metallic gold electrode is 20 nm/minute, other materials sedimentation rate 1 nm/minute.
Fig. 7 provides the transistorized transfer characteristic curve of the employing rubrene weak epitaxial growth film of the first structure the present invention relates to, and wherein the material of inducing layer 3 is p-6P, thickness 4 nanometers, rubrene thickness 20 nanometers, device mobility 2.02cm
2/ Vs, threshold voltage 30V, switch current ratio 10
6.
Table 2 provides transistorized formation and the device performance of the employing rubrene weak epitaxial growth film of the first structure the present invention relates to, and mobility is 2.0-3.2 square centimeter volt
-1Second
-1) threshold voltage is the 20-36 volt, switch current ratio is 10
5-10
7.
Table 2
As shown in Figure 8, concrete preparation method is as follows for the transistorized device configuration of the employing rubrene weak epitaxial growth film of the second structure the present invention relates to:
(1) form one deck SiO in the surface heat growth
2Heavily doped silicon chip surface vacuum moulding machine inducing layer 3, the material of described inducing layer 3 is with embodiment 1, thickness is not less than 2 nanometers, is not more than 12 nanometers; Described heavily doped silicon is as transistor gate, SiO
2As transistorized insulated gate;
(2) adopt bushing mask method vacuum deposited metal gold electrode 6 on inducing layer 3 surfaces;
(3) at inducing layer 3 surface vacuum deposition rubrene films 4, the thickness of described rubrene film 4 is not less than 5 nanometers, is not more than 50 nanometers;
Wherein, the base vacuum degree is not less than 1 * 10
-3Pascal (Pa), sedimentation rate 20 nm/minute of metal electrode, sedimentation rate 1 nm/minute of other materials, because metal electrode 6 deposits prior to rubrene film 4, the thin film deposition of part rubrene is arranged on metal electrode while therefore depositing rubrene film 4, this impact on transistor device performance can be ignored.Fig. 9 provides the transistorized transfer characteristic curve of the employing rubrene weak epitaxial growth film of the second structure the present invention relates to, and wherein the material of inducing layer 3 is BPPh, thickness 6 nanometers, rubrene thickness 25 nanometers, device mobility 1.93cm
2/ Vs, threshold voltage 30V, switch current ratio 10
6.
Table 3 provides transistorized formation and the device performance of the employing rubrene weak epitaxial growth film of the second structure the present invention relates to, and mobility is 1.93-3.6 square centimeter volt
-1Second
-1, threshold voltage is the 20-36 volt, switch current ratio is 10
5-10
7.
Table 3
The transistor of the employing rubrene weak epitaxial growth film of the third structure the present invention relates to, as shown in figure 10, concrete preparation method is as follows:
(1) form one deck SiO in the surface heat growth
2Heavily doped silicon chip surface vacuum moulding machine inducing layer 3, the material of described inducing layer 3 is with embodiment 1, thickness is not less than 2 nanometers, is not more than 12 nanometers; Described heavily doped silicon is as transistor gate, SiO
2As transistorized insulated gate;
(2) at inducing layer 3 surface vacuum deposition rubrene films 4, the thickness of described rubrene film 4 is not less than 5 nanometers, is not more than 50 nanometers;
(3) at rubrene film 4 surface vacuum deposition organic semiconductor layers 5, the thickness of described organic semiconductor layer 5 is not less than 2 nanometers, is not more than 20 nanometers, and material is metal-free phthalocyanine (H
2Pc), metallic phthalocyanine and functionalized variant thereof, the preferred CuPc of described containing metal phthalocyanine (CuPc), Phthalocyanine Zinc (ZnPc), Cobalt Phthalocyanine (CoPc), Nickel Phthalocyanine (NiPc), ferrous phthalocyanine (FePc), Tin Phthalocyanine (SnPc), and a kind of in phthalocyanine plumbous (PbPc), the preferred TiOPc of functionalized variant (TiOPc) of described metallic phthalocyanine, ranadylic phthalocyanine (VOPc), phthalocyanine chlorine aluminium (AlClPc), phthalocyanine oxygen tin (SnOPc), phthalocyanine dichloro tin (SnCl
2Pc), perfluoro CuPc (F
16CuPc), perfluoro Phthalocyanine Zinc (F
16ZnPc), perfluoro Cobalt Phthalocyanine (F
16CoPc), perfluoro Nickel Phthalocyanine (F
16NiPc), perfluoro ferrous phthalocyanine (F
16FePc) a kind of in.
(4) adopt bushing mask method vacuum deposited metal gold electrode 6 on organic semiconductor layer 5 surfaces;
Wherein, the base vacuum degree is not less than 1 * 10
-3Pascal (Pa), sedimentation rate 20 nm/minute of metal electrode, sedimentation rate 1 nm/minute of other materials.
Figure 11 provides the transistorized transfer characteristic curve of the employing rubrene weak epitaxial growth film of the third structure the present invention relates to, and wherein the material of inducing layer 3 is 3PT, thickness 8 nanometers, rubrene thickness 15 nanometers, organic semiconductor layer 5 is CuPc, thickness 10 nanometers, device mobility 2.2cm
2/ Vs, threshold voltage 33V, switch current ratio 10
4.
Table 4 provides transistorized formation and the device performance of the employing rubrene weak epitaxial growth film of the third structure the present invention relates to, and mobility is 2.0-3.6 square centimeter volt
-1Second
-1, threshold voltage is the 21-36 volt, switch current ratio is 10
4-10
6.
Table 4
The transistor of the employing rubrene weak epitaxial growth film of the 4th kind of structure the present invention relates to, as shown in figure 12, the preparation method is as follows:
(1) form one deck SiO in the surface heat growth
2Heavily doped silicon chip surface vacuum moulding machine inducing layer 3, the material of described inducing layer 3 is with embodiment 1, thickness is not less than 2 nanometers, is not more than 12 nanometers; Described heavily doped silicon is as transistor gate, SiO
2As transistorized insulated gate;
(2) at inducing layer 3 surface vacuum deposition rubrene films 4, the thickness of described rubrene film 4 is not less than 5 nanometers, is not more than 50 nanometers;
(3) adopt bushing mask method vacuum deposited metal gold electrode 6 on rubrene film 4 surfaces;
(4) at rubrene film 4 surface vacuum deposition organic semiconductor layers 5, the thickness of described organic semiconductor layer 5 is not less than 2 nanometers, is not more than 20 nanometers, and material is with embodiment 3, and thickness is not less than 2 nanometers, is not more than 20 nanometers;
Wherein, the base vacuum degree is not less than 1 * 10
-3Pascal (Pa), sedimentation rate 20 nm/minute of metal electrode, sedimentation rate 1 nm/minute of other materials, because metal electrode 6 deposits prior to organic semiconductor layer 5, the deposition of material that while therefore depositing organic semiconductor layer 5, part organic semiconductor 5 is arranged is on metal electrode, and this impact on transistorized device performance can be ignored.
Figure 13 provides the transistorized transfer characteristic curve of the employing rubrene weak epitaxial growth film of the 4th kind of structure the present invention relates to, wherein the material of inducing layer 3 is F2-BPTT, thickness 10 nanometers, thickness 30 nanometers of rubrene film 4, organic semiconductor layer 5 materials are VOPc, thickness 5 nanometers, device mobility 1.4cm
2/ Vs, threshold voltage 47V, switch current ratio 10
7.
Table 5 provides transistorized formation and the device performance of the employing rubrene weak epitaxial growth film of the 4th kind of structure the present invention relates to, and mobility is 1.4-3.5 square centimeter volt
-1Second
-1, threshold voltage is the 21-47 volt, switch current ratio is 10
6-10
7.
Table 5
Claims (12)
1. a rubrene weak epitaxial growth film, is characterized in that, comprises inducing layer (3) and rubrene film (4); There is weak epitaxial relationship between the material rubrene of the material of described inducing layer (3) and rubrene film (4); Be that Van der Waals force interacts between the material molecule that described weak epitaxial relationship is inducing layer (3) and the material rubrene molecule of rubrene film (4), between the rubrene crystal lattices of the material crystals lattice of inducing layer (3) and rubrene film (4), have epitaxial relationship;
2. by a kind of rubrene weak epitaxial growth film claimed in claim 1, it is characterized in that, the thickness of described inducing layer (3) is not less than 2 nanometers, is not more than 12 nanometers; The thickness of described rubrene film (4) is not less than 5 nanometers, is not more than 50 nanometers.
3. a transistor that adopts rubrene weak epitaxial growth film claimed in claim 1, is characterized in that, it is to be connected and composed in turn by gate electrode (1), insulated gate (2), inducing layer (3), rubrene film (4) and source/drain electrode (6); There is weak epitaxial relationship between described inducing layer (3) and rubrene film (4); Be that Van der Waals force interacts between the material molecule that described weak epitaxial relationship is inducing layer (3) and the rubrene molecule of rubrene film (4), between the rubrene crystal lattices of the material crystals lattice of inducing layer (3) and rubrene film (4), have epitaxial relationship; The material of described inducing layer (3) is with claim 1.
4. a kind of transistor that adopts the rubrene weak epitaxial growth film as claimed in claim 3, is characterized in that, the thickness of described inducing layer (3) is not less than 2 nanometers, is not more than 12 nanometers; The thickness of described rubrene film (4) is not less than 5 nanometers, is not more than 50 nanometers.
5. a transistor that adopts rubrene weak epitaxial growth film claimed in claim 1, it is characterized in that, it is by gate electrode (1), insulated gate (2), inducing layer (3) rubrene film (4) connects in turn, and source/drain electrode (6) directly contacts formation with inducing layer (3), rubrene film (4); There is weak epitaxial relationship between described inducing layer (3) and rubrene film (4); Be that Van der Waals force interacts between the material molecule that described weak epitaxial relationship is inducing layer (3) and the rubrene molecule of rubrene film (4), between the rubrene crystal lattices of the material crystals lattice of inducing layer (3) and rubrene film (4), have epitaxial relationship; The material of described inducing layer (3) is with claim 1.
6. a kind of transistor that adopts the rubrene weak epitaxial growth film as claimed in claim 5, is characterized in that, the thickness of described inducing layer (3) is not less than 2 nanometers, is not more than 12 nanometers; The thickness of described rubrene film (4) is not less than 5 nanometers, is not more than 50 nanometers.
7. a transistor that adopts rubrene weak epitaxial growth film claimed in claim 1, it is characterized in that, it is to be connected and composed in turn by gate electrode (1), insulated gate (2), inducing layer (3), rubrene film (4), organic semiconductor layer (5) and source/drain electrode (6); There is weak epitaxial relationship between described inducing layer (3) and rubrene film (4); Be that Van der Waals force interacts between the material molecule that described weak epitaxial relationship is inducing layer (3) and the rubrene molecule of rubrene film (4), between the rubrene crystal lattices of the material crystals lattice of inducing layer (3) and rubrene film (4), have epitaxial relationship; The material of described inducing layer (3) is with claim 1; The material of described organic semiconductor layer (5) is metal-free phthalocyanine, metallic phthalocyanine and functionalized variant thereof; The functionalized variant of described metallic phthalocyanine is a kind of in TiOPc, ranadylic phthalocyanine, phthalocyanine chlorine aluminium, phthalocyanine oxygen tin, phthalocyanine dichloro tin, perfluoro CuPc, perfluoro Phthalocyanine Zinc, perfluoro Cobalt Phthalocyanine, perfluoro Nickel Phthalocyanine and perfluoro ferrous phthalocyanine.
8. a kind of transistor that adopts the rubrene weak epitaxial growth film as claimed in claim 7, is characterized in that, described containing metal phthalocyanine is a kind of in CuPc, Phthalocyanine Zinc, Cobalt Phthalocyanine, Nickel Phthalocyanine, ferrous phthalocyanine, Tin Phthalocyanine and phthalocyanine lead; The functionalized variant of described metallic phthalocyanine is a kind of in TiOPc, ranadylic phthalocyanine, phthalocyanine chlorine aluminium, phthalocyanine oxygen tin, phthalocyanine dichloro tin, perfluoro CuPc, perfluoro Phthalocyanine Zinc, perfluoro Cobalt Phthalocyanine, perfluoro Nickel Phthalocyanine and perfluoro ferrous phthalocyanine.
9. a kind of transistor that adopts the rubrene weak epitaxial growth film as claimed in claim 7 or 8, is characterized in that, the thickness of described inducing layer (3) is not less than 2 nanometers, is not more than 12 nanometers; The thickness of described rubrene film (4) is not less than 5 nanometers, is not more than 50 nanometers; The thickness of described organic semiconductor layer 5 is not less than 2 nanometers, is not more than 20 nanometers.
10. a transistor that adopts rubrene weak epitaxial growth film claimed in claim 1, it is characterized in that, it is by gate electrode (1), insulated gate (2), inducing layer (3), rubrene film (4), organic semiconductor layer (5) connect in turn, and source/drain electrode (6) directly contacts formation with rubrene film (4), organic semiconductor layer (5); There is weak epitaxial relationship between described inducing layer (3) and rubrene film (4); Be that Van der Waals force interacts between the material molecule that described weak epitaxial relationship is inducing layer (3) and the rubrene molecule of rubrene film (4), between the rubrene crystal lattices of the material crystals lattice of inducing layer (3) and rubrene film (4), have epitaxial relationship; The material of described inducing layer (3) is with claim 1; The material of described organic semiconductor layer (5) is metal-free phthalocyanine, metallic phthalocyanine and functionalized variant thereof; The functionalized variant of described metallic phthalocyanine is a kind of in TiOPc, ranadylic phthalocyanine, phthalocyanine chlorine aluminium, phthalocyanine oxygen tin, phthalocyanine dichloro tin, perfluoro CuPc, perfluoro Phthalocyanine Zinc, perfluoro Cobalt Phthalocyanine, perfluoro Nickel Phthalocyanine and perfluoro ferrous phthalocyanine.
11. a kind of transistor that adopts the rubrene weak epitaxial growth film as claimed in claim 10, is characterized in that, described containing metal phthalocyanine is a kind of in CuPc, Phthalocyanine Zinc, Cobalt Phthalocyanine, Nickel Phthalocyanine, ferrous phthalocyanine, Tin Phthalocyanine and phthalocyanine lead;
The functionalized variant of described metallic phthalocyanine is a kind of in TiOPc, ranadylic phthalocyanine, phthalocyanine chlorine aluminium, phthalocyanine oxygen tin, phthalocyanine dichloro tin, perfluoro CuPc, perfluoro Phthalocyanine Zinc, perfluoro Cobalt Phthalocyanine, perfluoro Nickel Phthalocyanine and perfluoro ferrous phthalocyanine.
12. a kind of transistor that adopts the rubrene weak epitaxial growth film as described as claim 10 or 11, is characterized in that,
The thickness of described inducing layer (3) is not less than 2 nanometers, is not more than 12 nanometers; The thickness of described rubrene film (4) is not less than 5 nanometers, is not more than 50 nanometers; The thickness of described organic semiconductor layer (5) is not less than 2 nanometers, is not more than 20 nanometers.
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| CN101567423A (en) * | 2009-06-08 | 2009-10-28 | 中国科学院长春应用化学研究所 | Organic solar energy cell |
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| CN101454659A (en) * | 2006-05-29 | 2009-06-10 | 皇家飞利浦电子股份有限公司 | Organic field-effect transistor for sensing applications |
| CN101562230A (en) * | 2009-05-25 | 2009-10-21 | 中国科学院长春应用化学研究所 | Organic solar cell adopting weak epitaxial growth film as donor |
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