CN102148154A - Multilayer ohmic contact system of gallium nitride device with composite metal barrier layer - Google Patents
Multilayer ohmic contact system of gallium nitride device with composite metal barrier layer Download PDFInfo
- Publication number
- CN102148154A CN102148154A CN 201010600790 CN201010600790A CN102148154A CN 102148154 A CN102148154 A CN 102148154A CN 201010600790 CN201010600790 CN 201010600790 CN 201010600790 A CN201010600790 A CN 201010600790A CN 102148154 A CN102148154 A CN 102148154A
- Authority
- CN
- China
- Prior art keywords
- metal level
- ohmic contact
- gallium nitride
- algan
- metal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 229910052751 metal Inorganic materials 0.000 title claims abstract description 93
- 239000002184 metal Substances 0.000 title claims abstract description 93
- 229910002601 GaN Inorganic materials 0.000 title claims abstract description 35
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 title claims abstract description 31
- 230000004888 barrier function Effects 0.000 title claims abstract description 26
- 239000002131 composite material Substances 0.000 title abstract 2
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 claims description 9
- 239000000203 mixture Substances 0.000 claims description 8
- 238000000137 annealing Methods 0.000 abstract description 14
- 239000011261 inert gas Substances 0.000 abstract description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N nitrogen Substances N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 abstract 1
- 229910052757 nitrogen Inorganic materials 0.000 abstract 1
- 229910052719 titanium Inorganic materials 0.000 description 10
- 229910052737 gold Inorganic materials 0.000 description 8
- 238000000034 method Methods 0.000 description 8
- 229920002120 photoresistant polymer Polymers 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 4
- 238000000576 coating method Methods 0.000 description 4
- 150000001875 compounds Chemical class 0.000 description 4
- 230000008020 evaporation Effects 0.000 description 4
- 238000001704 evaporation Methods 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- 238000012876 topography Methods 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 150000002739 metals Chemical class 0.000 description 3
- 229910052750 molybdenum Inorganic materials 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 238000005566 electron beam evaporation Methods 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 239000012299 nitrogen atmosphere Substances 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 229910018509 Al—N Inorganic materials 0.000 description 1
- 241000408659 Darpa Species 0.000 description 1
- 206010035148 Plague Diseases 0.000 description 1
- 206010037549 Purpura Diseases 0.000 description 1
- 241001672981 Purpura Species 0.000 description 1
- 241000607479 Yersinia pestis Species 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 230000005641 tunneling Effects 0.000 description 1
Images
Landscapes
- Junction Field-Effect Transistors (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
The invention discloses a multilayer ohmic contact system of a gallium nitride device with a composite metal barrier layer, which is characterized in that the ohmic contact system adopted by a source electrode 16 and a drain electrode 17 of an aluminum-gallium-nitrogen (AlGaN)/gallium nitride (GaN) high electron mobility transistor (HEMT) is Ti/Al/Ni/Mo/Au. The ohmic contact system has the advantage of simultaneously meeting the requirements on low ohmic contact resistivity, high surface evenness and high reliability required by the AlGaN/GaN HEMT. In the embodiment 1, good ohmic contact with an AlGaN layer 13 can only be formed after high-temperature thermal annealing under the protection of inert gas such as N2; and in the embodiment 2, the problem of poor adhesion between an Mo metal layer 28 and an Au metal layer 30 can be solved through a Ti metal layer 29, so that the requirement that the metal Au on the uppermost layer of ohmic contact is thick on some occasions is met.
Description
Technical field:
What the present invention relates to is a kind of gallium nitride device multilayer ohmic contact system with composition metal barrier layer, is the ohmic contact system with composition metal barrier layer that is fit to aluminum gallium nitride compound/GaN high electron mobility transistor.Belong to technical field of semiconductors.
Background technology:
Aluminum gallium nitride (AlGaN)/gallium nitride (GaN) High Electron Mobility Transistor (HEMT) generally adopts the multiple layer metal ohmic contact system based on Ti/Al at present, as Ti/Al/Ti/Au, Ti/Al/Ni/Au, Ti/Al/Pt/Au, Ti/Al/Mo/Au etc., adopt methods such as evaporation or sputter successively Ti, Al, Ti (Ni or Pt or Mo etc.), Au to be deposited to the AlGaN laminar surface, and annealing forms ohmic contact under the high temperature about 800 ℃, and its principle is commonly considered as Ti and Al reaction generation Al under lower temperature (200-300 ℃)
3Ti, when temperature further improves 400 ℃ or when above, the oxygen on Ti and AlGaN barrier layer surface reacts and is generating the Ti-Al-N alloy at the interface, in the AlGaN barrier layer, form N room simultaneously, form middle doping, increase the probability that the electron tunneling barrier layer arrives 2DEG in the raceway groove barrier layer as the alms giver, thereby form ohmic contact (S.Ruvimov, Z.Liliental-Weber, J.Washburn, D.Qiao, S.S.Lau, and P.K.Chu, " Microstructure ofTi/Al Ohmic Contacts for n-AlxGa1-xN ", Applied Physics Letters, Vol.73, No.18, pp.2582-2584,1998).Wherein metals such as Ti, Ni, Pt, Mo play the effect on barrier layer, stop Au and Al to react and form the alloy-layer with high resistivity that one deck is referred to as " purple plague purpura ", and Au is convenient to follow-up test in order to reduce contact resistance.
Ti/Al/Ti/Au, Ti/Al/Ni/Au, Ti/Al/Pt/Au is to obtain lower ohmic contact resistance rate as the advantage of AlGaN/GaN HEMT metal ohmic contact system, particularly Ti/Al/Ni/Au forms the ohmic contact resistance rate and can reach 0.2 Ω mm even lower (Jacobs et al., J.Crys.Growth 241 (15-18) 2002), but its shortcoming is that the ohmic contact surface roughness is bigger, smooth inadequately, this influences the lithography registration in the subsequent technique on the one hand, the reliability of work also will be affected under its high temperature on the other hand, the Au metal that is wherein adopted will the mode by electromigration enter semiconductor from the thin place of ohmic contact metal layer, thereby being used for interconnected metal level on ohmic contact metal layer and its forms as shown in Figure 1 cavity (Mark J.Rosker at the interface, The DARPA Wide Band GapSemiconductor for RF Applications (WBGS-RF) Program:Phase IIResults, CSMANTECH 2009 presentation), cause component failure.
Ti/Al/Mo/Au is to obtain the surface of good evenness as the advantage of AlGaN/GaN HEMT metal ohmic contact system, this mainly has benefited from the high-melting-point (2623 ℃ of fusing points) of metal M o, the mutual solubility of Au and Mo lower (solubility of 850 ℃ of following Au in Mo is lower than 1%) in addition, in the process that forms ohmic contact and in the high temperature use of device, will can be good at stoping Au to enter semiconductor by the Mo layer, thereby help to improve the reliability of device, but Ti/Al/Mo/Au is that its ohmic contact resistance rate is compared Ti/Al/Ni/Au and is greater as the shortcoming of AlGaN/GaN HEMT metal ohmic contact system.
Summary of the invention:
The invention provides a kind of gallium nitride device multilayer ohmic contact system with composition metal barrier layer, be a kind of ohmic contact system of suitable aluminum gallium nitride compound/GaN high electron mobility transistor with composition metal barrier layer, it can satisfy simultaneously high-performance AlGaN/GaN HEMT required have little ohmic contact resistance rate, surface of good evenness and a high-reliability.
Technical solution of the present invention: a kind of gallium nitride device multilayer ohmic contact system with composition metal barrier layer is characterized in that the ohmic contact system that aluminum gallium nitride (AlGaN)/gallium nitride (GaN) High Electron Mobility Transistor (HEMT) source electrode 16 and drain electrode 17 are adopted is Ti/Al/Ni/Mo/Au.
Advantage of the present invention: multilayer ohmic contact provided by the present invention system can adopt the method for evaporation or sputter to be deposited on aluminum gallium nitride compound/gallium nitride surface and obtain, and at N
2Form ohmic contact by high annealing under the atmosphere, these methods are compatible mutually with existing method.The multilayer ohmic contact system that this aspect provided can satisfy simultaneously high-performance AlGaN/GaN HEMT required have requirements such as little ohmic contact resistance rate, surface of good evenness and high-reliability.
Description of drawings:
To be AlGaN/GaN HEMT form empty schematic diagram at the interface through be used for interconnected metal level behind the hot operation on ohmic contact metal layer and its with accompanying drawing 1.
Accompanying drawing 2 is general structural representations of AlGaN/GaN HEMT.
Accompanying drawing 3-Fig. 6 is the implementation step schematic diagram of embodiments of the invention 1.。
Accompanying drawing 7 is with Ti/Al/Ni/Au, the Ti/Al/Ni/Mo/Au of identical resolution chart test acquisition and the ohmic contact test result figure of Ti/Al/Mo/Au.
Accompanying drawing 8 is the contrast situation signal electrographs that adopt the formed Ohm contact electrode surface topography of Ti/Al/Ni/Au ohmic contact system.
Accompanying drawing 9 is the contrast situation meaning electrographs that adopt the formed Ohm contact electrode surface topography of Ti/Al/Ni/Mo/Au ohmic contact system.
Accompanying drawing 10 is embodiments of the invention 2 structural representations.
Accompanying drawing 11 is structural representations of metals deposited layer among Fig. 5.
Accompanying drawing 12 is structural representations of metals deposited layer 19 among Figure 10.
Specific embodiment:
Contrast Fig. 2, its structure comprises substrate 11, GaN resilient coating 12, AlGaN barrier layer 13 and source electrode 16, drain electrode 17 and gate electrode 18, wherein substrate 11 is GaN resilient coatings 12, be AlGaN barrier layer 13 on the GaN resilient coating 12, source electrode 16, drain electrode 17 and gate electrode 18 are on AlGaN barrier layer 13.
About the used material of substrate in aluminum gallium nitride (AlGaN)/gallium nitride (GaN) High Electron Mobility Transistor (HEMT) 11, GaN resilient coating 12 and AlGaN barrier layer 13 form can report (Y.-F.Wu et al. with reference to pertinent literature, " High Al-content AlGaN/GaN HEMT ' s on SiCsubstrates with very high power performance; " in IEDM Tech.Dig., Dec.6-8,1999, pp.925-927 and M.Asif Khan, X.Hu, G.Simin, J.Yang, R.Gaska, and M.S.Shur, " AlGaN/GaN metal-oxide-semiconductorheterostructure field effect transistors on SiC substrates, " Appl.Phys.Lett., vol.77, pp.1339-1341,2000. etc.), gate electrode 18 is a Schottky contacts with barrier layer 13 formation, its Schottky contacts system that selects for use is well-known in this area, is not described further.
Embodiment 1
Fig. 3-Fig. 6 is the implementation step of one embodiment of the present of invention, on AlGaN barrier layer 13, apply photoresist layer 14 at first as shown in Figure 3, expose afterwards and the back of developing forms as shown in Figure 4 figure, on metal level 15 to AlGaN barrier layers 13 shown in Figure 5 for another example, the photoresist layer 14, at last through peeling off remove photoresist 14 with and on metal level 15 obtain as shown in Figure 6 source electrode 16 and drain electrode 17.
Wherein metal level 15 is made up of five layers of metal level as shown in figure 11, from AlGaN layer 13 and metal level 15 begin at the interface form by Ti metal level 20, Al metal level 21, Ni metal level 22, Mo metal level 23 and Au metal level 24 successively.The thickness of Ti metal level 20 is at 15nm-30nm, and the ratio of Al metal level 21 and Ti metal level is at 3-10, and the thickness of Ni metal level 22 is between 10nm-30nm, and the thickness of Mo metal level 23 is at 25nm-50nm, and the thickness of Au metal level 24 is at 20nm-50nm.Metal level 15 can be obtained by the method for evaporation or sputter, and preferred deposit mode is an electron beam evaporation.
Among Fig. 7 to Ti/Al/Ni/Au, Ti/Al/Ni/Mo/Au and several ohmic contact of Ti/Al/Mo/Au system at identical annealing conditions: N
2Atmosphere, 830 ℃ of annealing temperatures, annealing time are the ohmic contact test result that 30s obtains down, adopted identical resolution chart in order to have in the comparativity test, the ohmic contact characteristic of Ti/Al/Ni/Au and AlGaN/GaN formation is the best as can be seen, Ti/Al/Ni/Mo/Au is close with it, and Ti/Al/Mo/Au is then very different.
Fig. 8, Fig. 9 have compared Ti/Al/Ni/Au and two kinds of ohmic contact systems of Ti/Al/Ni/Mo/Au formed Ohm contact electrode pattern behind N2 atmosphere, 830 ℃ of annealing temperatures, annealing time 30s, adopt Ti/Al/Ni/Mo/Au ohmic contact system as can be seen after the ohmic contact surface topography improve greatly.
Embodiment 2
Contrast Figure 10, on AlGaN barrier layer 13, apply photoresist layer 14 at first as shown in Figure 3, expose afterwards and the back of developing forms as shown in Figure 4 figure, on deposited metal 19 to AlGaN barrier layers 13 shown in Figure 10 for another example, the photoresist layer 14, at last through peeling off remove photoresist 14 with and on metal level 19 obtain as shown in Figure 6 source electrode 16 and drain electrode 17.
Wherein metal level 19 is made up of six layers of metal level as shown in figure 12, from AlGaN layer 13 and metal level 19 begin at the interface form by Ti metal level 25, Al metal level 26, Ni metal level 27, Mo metal level 28, Ti metal level 29 and Au metal level 30 successively.The thickness of Ti metal level 25 is at 15nm-30nm, the ratio of Al metal level 26 and Ti metal level is at 3-10, and the thickness of Ni metal level 27 is at 10nm-30nm, and the thickness of Mo metal level 28 is at 25nm-50nm, the thickness of Ti metal level 29 is at 10nm-30nm, and the thickness of Au metal level 30 is at 20nm-150nm.Metal level 19 can be obtained by the method for evaporation or sputter, and preferred deposit mode is an electron beam evaporation.
Need be with embodiment 1 source electrode 16 and drain electrode 17 at N
2Down by forming good Ohmic contact with AlGaN layer 13 behind the high-temperature thermal annealing, preferably annealing temperature is that 800 ℃-870 ℃, annealing time are 15s-40s Deng inert gas shielding.
Embodiment 2 compares with embodiment 1 can obtain close ohmic contact resistance rate and surface topography, embodiment 2 be by can solving Mo metal level 28 and the relatively poor problem of Au metal level 30 adhesions at Ti metal level 29, thereby satisfies under some occasion for the thicker situation of the metal A u of ohmic contact the superiors thickness requirement.
Claims (3)
1. the gallium nitride device multilayer ohmic contact system with composition metal barrier layer is characterized in that the ohmic contact system that aluminum gallium nitride (AlGaN)/gallium nitride (GaN) High Electron Mobility Transistor (HEMT) source electrode 16 and drain electrode 17 are adopted is Ti/Al/Ni/Mo/Au.
2. a kind of gallium nitride device multilayer ohmic contact system according to claim 1 with composition metal barrier layer, it is characterized in that beginning at the interface from aluminum gallium nitride (AlGaN) layer (13) and source electrode (16) and drain electrode (17) successively by a Ti metal level (20), the one Al metal level (21), the one Ni metal level (22), the one a Mo metal level (23) and an Au metal level (24) are formed, wherein the thickness of a Ti metal level (20) is at 15nm-30nm, the ratio of the one an Al metal level (21) and a Ti metal level (20) is at 3-10, the thickness of the one Ni metal level (22) is at 10nm-30nm, the thickness of the one Mo metal level (23) is at 25nm-50nm, and the thickness of an Au metal level (24) is at 20nm-50nm.
3. according to the ohmic contact system of claim 2, it is characterized in that beginning at the interface from aluminum gallium nitride (AlGaN) layer (13) and source electrode (16) and drain electrode (17) successively by the 3rd Ti metal level (25), the 2nd Al metal level (26), Ni metal level (27), the 2nd Mo metal level (28), the 2nd Ti metal level (29) and Au metal level (30) are formed, wherein the thickness of the 3rd Ti metal level (25) is at 15nm-30nm, the ratio of the 2nd Al metal level (26) and the 3rd Ti metal level (25) is at 3-10, the thickness of the 2nd Ni metal level (27) is at 10nm-30nm, the thickness of the 2nd Mo metal level (28) is at 25nm-50nm, the thickness of the 2nd Ti metal level (29) is at 10nm-30nm, and the thickness of the 2nd Au metal level (30) is at 20nm-150nm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201010600790A CN102148154B (en) | 2010-12-21 | 2010-12-21 | Multilayer ohmic contact system of gallium nitride device with composite metal barrier layer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201010600790A CN102148154B (en) | 2010-12-21 | 2010-12-21 | Multilayer ohmic contact system of gallium nitride device with composite metal barrier layer |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102148154A true CN102148154A (en) | 2011-08-10 |
| CN102148154B CN102148154B (en) | 2012-10-10 |
Family
ID=44422333
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201010600790A Active CN102148154B (en) | 2010-12-21 | 2010-12-21 | Multilayer ohmic contact system of gallium nitride device with composite metal barrier layer |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN102148154B (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102738224A (en) * | 2012-06-01 | 2012-10-17 | 中国电子科技集团公司第五十五研究所 | Multi-layer metal ohmic contact system adopting silicon alloys and manufacturing method thereof |
| CN103123933A (en) * | 2012-12-25 | 2013-05-29 | 中国电子科技集团公司第五十五研究所 | GaAs pseudomorphic high electron mobility transistor |
| RU2619444C1 (en) * | 2016-03-24 | 2017-05-15 | Федеральное государственное бюджетное учреждение науки Институт сверхвысокочастотной полупроводниковой электроники Российской академии наук (ИСВЧПЭ РАН) | METHOD FOR PRODUCING OHMIC CONTACTS TO NITRIDE HETEROSTRUCTURES ON Si/Al BASIS |
| CN110021690A (en) * | 2019-03-19 | 2019-07-16 | 北京大学 | A kind of method and its application for the contact resistance reducing N-shaped AlGaN based material |
| CN110098249A (en) * | 2018-01-29 | 2019-08-06 | 世界先进积体电路股份有限公司 | Semiconductor structure and its manufacturing method |
| CN115347452A (en) * | 2021-05-12 | 2022-11-15 | 常州纵慧芯光半导体科技有限公司 | A semiconductor device and its cathode structure |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9276077B2 (en) | 2013-05-21 | 2016-03-01 | Globalfoundries Inc. | Contact metallurgy for self-aligned high electron mobility transistor |
| US9231094B2 (en) | 2013-05-21 | 2016-01-05 | Globalfoundries Inc. | Elemental semiconductor material contact for high electron mobility transistor |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1734730A (en) * | 2004-08-09 | 2006-02-15 | 中国科学院微电子研究所 | Al/Ti/Al/Ni/Au ohmic contact system suitable for GaN device |
| JP2008270310A (en) * | 2007-04-17 | 2008-11-06 | Toyota Central R&D Labs Inc | Group III nitride compound semiconductor vertical transistor and manufacturing method thereof |
| CN101303978A (en) * | 2008-07-04 | 2008-11-12 | 西安电子科技大学 | Manufacturing method suitable for N-type ohmic contact of gallium nitride device |
-
2010
- 2010-12-21 CN CN201010600790A patent/CN102148154B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1734730A (en) * | 2004-08-09 | 2006-02-15 | 中国科学院微电子研究所 | Al/Ti/Al/Ni/Au ohmic contact system suitable for GaN device |
| JP2008270310A (en) * | 2007-04-17 | 2008-11-06 | Toyota Central R&D Labs Inc | Group III nitride compound semiconductor vertical transistor and manufacturing method thereof |
| CN101303978A (en) * | 2008-07-04 | 2008-11-12 | 西安电子科技大学 | Manufacturing method suitable for N-type ohmic contact of gallium nitride device |
Non-Patent Citations (4)
| Title |
|---|
| 《J. Vac. Sci. Technol. B》 20041007 Deepak Selvanathan等 "Comparative study of Ti/Al/Mo/Au, Mo/Al/Mo/Au, and V/Al/Mo/Au ohmic contacts to AlGaN/GaN heterostructures" 2409－2416 1－3 第22卷, 第5期 * |
| 《JOURNAL OF APPLIED PHYSICS》 20050906 Yunju Sun等 "Comprehensive study of Ohmic electrical characteristics and optimization of Ti/Al/Mo/Au multilayer Ohmics on undoped AlGaN/GaN heterostructure" 053701-(1－4) 1-3 第98卷, * |
| 《Journal of Materials Science》 20100520 I. Jyothi等 "Microstructural and electrical characteristics of rapidly annealed Ni/Mo Schottky rectifiers on cleaned n-type GaN (0001) surface" 286-291 1-3 , * |
| 《Solid-State Electronics》 20040531 N. Miura 等 "Thermal annealing effects on Ni/Au based Schottky contacts on n-GaN and AlGaN/GaN with insertion of high work function metal" 689－695 1－3 第48卷, 第5期 * |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102738224A (en) * | 2012-06-01 | 2012-10-17 | 中国电子科技集团公司第五十五研究所 | Multi-layer metal ohmic contact system adopting silicon alloys and manufacturing method thereof |
| CN103123933A (en) * | 2012-12-25 | 2013-05-29 | 中国电子科技集团公司第五十五研究所 | GaAs pseudomorphic high electron mobility transistor |
| RU2619444C1 (en) * | 2016-03-24 | 2017-05-15 | Федеральное государственное бюджетное учреждение науки Институт сверхвысокочастотной полупроводниковой электроники Российской академии наук (ИСВЧПЭ РАН) | METHOD FOR PRODUCING OHMIC CONTACTS TO NITRIDE HETEROSTRUCTURES ON Si/Al BASIS |
| CN110098249A (en) * | 2018-01-29 | 2019-08-06 | 世界先进积体电路股份有限公司 | Semiconductor structure and its manufacturing method |
| CN110021690A (en) * | 2019-03-19 | 2019-07-16 | 北京大学 | A kind of method and its application for the contact resistance reducing N-shaped AlGaN based material |
| CN115347452A (en) * | 2021-05-12 | 2022-11-15 | 常州纵慧芯光半导体科技有限公司 | A semiconductor device and its cathode structure |
Also Published As
| Publication number | Publication date |
|---|---|
| CN102148154B (en) | 2012-10-10 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN102148154B (en) | Multilayer ohmic contact system of gallium nitride device with composite metal barrier layer | |
| TW451504B (en) | Compound semiconductor device and method for making the same | |
| US9419119B2 (en) | Semiconductor device and manufacturing method thereof | |
| TWI543380B (en) | Semiconductor device having a gate including oxidized nickel and related manufacturing method | |
| US20110140173A1 (en) | Low OHMIC contacts containing germanium for gallium nitride or other nitride-based power devices | |
| EP2793265B1 (en) | Semiconductor device and manufacturing method | |
| CN101506958A (en) | Field effect transistor | |
| US9934978B2 (en) | Method of fabricating an electrical contact for use on a semiconductor device | |
| JP7068676B2 (en) | Non-etched gas-cooled epitaxial stack for group IIIA-N devices | |
| JPWO2014185034A1 (en) | Semiconductor device | |
| CN102738224A (en) | Multi-layer metal ohmic contact system adopting silicon alloys and manufacturing method thereof | |
| US7719030B2 (en) | Aluminum alloys for low resistance, ohmic contacts to III-nitride or compound semiconductor | |
| CN213304145U (en) | GaN-based HEMT gold-free ohmic contact electrode | |
| JP2016522991A (en) | Gallium nitride field effect transistor | |
| WO2021027903A1 (en) | Gan-based hemt gold-free ohmic contact electrode and thermal nitridation forming method therefor | |
| CN108364864A (en) | The preparation method of AlGaN/GaN HEMT device Ohm contact electrodes | |
| JP2023554559A (en) | Group III nitride transistor structure capable of reducing leakage current and method for manufacturing the same | |
| JP5877967B2 (en) | Compound semiconductor device | |
| CN207381406U (en) | GaN semiconductor devices | |
| Aboelfotoh et al. | Schottky-barrier height of a Ti-W alloy on n-type and p-type Si | |
| CN1734730A (en) | Al/Ti/Al/Ni/Au ohmic contact system suitable for GaN device | |
| JP4977466B2 (en) | Schottky electrode for nitride semiconductor device and method for manufacturing the same | |
| JP5846779B2 (en) | Semiconductor device and manufacturing method thereof | |
| WO2025052364A1 (en) | Method to tune gate work function in p-gan gate e-mode hemt | |
| Sinitskaya et al. | Demonstration of Ytterbium-Based Non-Alloyed Ohmic Contacts to n-GaN |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant |