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CN102124550B - 金属纳米油墨及其制造方法，使用该金属纳米油墨的焊接方法及焊接装置 - Google Patents

金属纳米油墨及其制造方法，使用该金属纳米油墨的焊接方法及焊接装置 Download PDF

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Publication number
CN102124550B
CN102124550B CN2009801300513A CN200980130051A CN102124550B CN 102124550 B CN102124550 B CN 102124550B CN 2009801300513 A CN2009801300513 A CN 2009801300513A CN 200980130051 A CN200980130051 A CN 200980130051A CN 102124550 B CN102124550 B CN 102124550B
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semiconductor chip
electrodes
ink
metal nano
electrode
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CN102124550A (zh
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前田徹
谷川徹郎
寺本章伸
小田正明
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Tohoku University NUC
Ulvac Inc
Arakawa Co Ltd
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Tohoku University NUC
Ulvac Inc
Arakawa Co Ltd
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    • H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07
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Abstract

在将由分散剂(102)涂布表面的金属纳米粒子(101)混合到有机溶剂(105)中前或混合后，将氧作为氧纳米气泡(125)或氧气泡(121)注入有机溶剂(105)中，通过加压烧结制造用于接合半导体芯片的电极和线路板的电极以及/或半导体芯片的电极和另一半导体芯片的电极的金属纳米油墨(100)。将该金属纳米油墨(100)的微液滴射出到电极上，在半导体芯片的的电极和线路板的电极上形成凸块，使得半导体芯片反转，对位叠合在线路板上后，对各电极间的凸块加压并加热，加压烧结凸块的金属纳米粒子。由此，抑制加压烧结时产生空隙。

Description

金属纳米油墨及其制造方法,使用该金属纳米油墨的焊接方法及焊接装置
技术领域
本发明涉及用于接合半导体芯片(die)的电极和线路板的电极以及/或半导体芯片的电极和另一半导体芯片的电极的金属纳米油墨(nano-ink)及其制造方法，以及使用该金属纳米油墨的焊接方法和焊接装置。
背景技术
为了半导体芯片等的电子器件的电极和电路线路板上的电路图案的电极的接合，可以使用以下方法：在半导体芯片等电子器件的电极焊接点(pad)上形成焊锡凸块，将形成的焊锡凸块向着电路线路板的电极朝下配置，加热接合(例如，参照专利文献1)。但是，如专利文献1所记载的以往技术，若欲使用焊锡使得电子器件三维叠层接合，则有时会因接合时的加热使得先接合的接合部熔融，降低接合可靠性。因此，作为不使用焊锡凸块而接合各电极的方法，提出使用包含金属的超微粒的金属纳米焊剂的各种各样方法。
在专利文献1中，提出以下接合方法：使得银的超微粉末分散在溶剂中，调制银微粒焊剂，在电路线路板的端子电极上形成上述银微粒焊剂的球，用面朝下法使得半导体元件的电极接合在电路线路板的端子电极上形成的球上后，使得银微粒焊剂中的甲苯等溶剂蒸发后，在100至250℃温度下烧成，电气接合半导体元件和电路线路板。
在专利文献2中，提出以下金属纳米粒子分散液：通过喷墨等喷射金属纳米粒子分散液，具有圆形形状底面的圆柱形状，高度为与底面半径相同程度或超过其的高度，叠层形成涂布层，此后能通过低温烧结，形成金属烧结柱，通过调整溶剂成份，将金属纳米粒子分散液作为微液滴喷射时，粘性低，成为在喷射后微液滴到达电极表面前的期间溶剂蒸腾散发、使得涂布层能叠层为柱状结构那样的粘性，具有到达后低温烧结时能从金属纳米粒子间挤出那样的粘性特性。并且，提出使用该金属纳米粒子分散液在配线线路板形成导电性配线层。
[专利文献1]特开平9-326416号公报
[专利文献2]再公开WO2005-025787号公报
但是，当使得金属纳米油墨或金属纳米焊剂等烧结形成金属层场合，在金属层内部，形成金属纳米粒子烧结形成的金属以外的部分。该部分称为空隙(void)，其使得电阻增加，或使得金属层强度降低，因此，当使得金属纳米油墨等烧结形成金属层场合，需要抑制产生空隙，抑制残存没有取除分散剂的、未反应的金属纳米粒子。
发明内容
本发明的目的在于，提供能抑制加压烧结时产生空隙的金属纳米油墨。又，本发明的另一目的在于，提供能抑制产生空隙的芯片焊接方法以及芯片焊接装置。
本发明的金属纳米油墨用于通过加压烧结使得半导体芯片的电极和线路板的电极以及/或半导体芯片的电极和另一半导体芯片的电极接合；其特征在于：使得由分散剂涂布表面的金属纳米粒子和氧混合在有机溶剂中，进行调整。又，在本发明的金属纳米油墨中，较好的是，有机溶剂中的氧浓度为过饱和。
本发明的金属纳米油墨的制造方法用于通过加压烧结使得半导体芯片的电极和线路板的电极以及/或半导体芯片的电极和另一半导体芯片的电极接合；其特征在于，该金属纳米油墨的制造方法包括：
金属纳米粒子混合工序，将由分散剂涂布表面的金属纳米粒子混合在有机溶剂中；
氧注入工序，将氧注入有机溶剂中。
又，在本发明的金属纳米油墨的制造方法中，较好的是，氧注入工序将氧作为纳米气泡注入有机溶剂中。
又，在本发明的金属纳米油墨的制造方法，既可以在金属纳米粒子混合工序后进行氧注入工序，也可以在金属纳米粒子混合工序前进行氧注入工序。
本发明的芯片焊接方法包括：
叠合工序，将由分散剂涂布表面的金属纳米粒子和成为纳米气泡的氧混合在有机溶剂中，形成金属纳米油墨，射出所述金属纳米油墨的微液滴，在半导体芯片的电极上形成凸块，射出所述金属纳米油墨的微液滴，在线路板的电极上形成凸块，射出所述金属纳米油墨的微液滴，在另一半导体芯片的电极上形成凸块，将上述形成凸块的半导体芯片面朝下设置在上述形成凸块的线路板以及/或上述形成凸块的另一半导体芯片上，通过凸块叠合半导体芯片的电极和线路板的电极以及/或半导体芯片的电极和另一半导体芯片的电极；以及
加压烧结工序，加压并加热各电极间的凸块，使得凸块的金属纳米粒子加压烧结，电气接合各电极之间；
接合半导体芯片的电极和线路板的电极以及/或半导体芯片的电极和另一半导体芯片的电极。
本发明的芯片焊接装置包括：
喷射头，将由分散剂涂布表面的金属纳米粒子和成为纳米气泡的氧混合在有机溶剂中，形成金属纳米油墨，射出所述金属纳米油墨的微液滴，在电极上形成凸块；
叠合机构，射出所述金属纳米油墨的微液滴，在半导体芯片的电极上形成凸块，射出所述金属纳米油墨的微液滴，在线路板的电极上形成凸块，射出所述金属纳米油墨的微液滴，在另一半导体芯片的电极上形成凸块，将上述形成凸块的半导体芯片面朝下设置在上述形成凸块的线路板以及/或上述形成凸块的另一半导体芯片上，通过凸块叠合半导体芯片的电极和线路板的电极以及/或半导体芯片的电极和另一半导体芯片的电极；以及
加压加热机构，加压并加热各电极间的凸块，使得凸块的金属纳米粒子加压烧结，电气接合各电极之间；
接合半导体芯片的电极和线路板的电极以及/或半导体芯片的电极和另一半导体芯片的电极。
下面说明本发明效果。
本发明的金属纳米油墨具有能抑制加压烧结时产生空隙的效果。又，本发明的芯片焊接方法以及芯片焊接装置具有能抑制产生空隙的效果。
附图说明
图1是表示本发明实施形态的金属纳米油墨的说明图。
图2是表示本发明实施形态的金属纳米油墨的制造方法的说明图。
图3是表示本发明另一实施形态的金属纳米油墨的说明图。
图4是表示在本发明另一实施形态的金属纳米油墨的制造方法中向有机溶剂注入氧纳米气泡方法的说明图。
图5A是表示使用本发明实施形态的金属纳米油墨进行芯片焊接时形成凸块的说明图。
图5B是表示使用本发明实施形态的金属纳米油墨进行芯片焊接时形成凸块的说明图。
图6A是表示使用本发明实施形态的金属纳米油墨进行芯片焊接时向半导体芯片的线路板上进行叠合的说明图。
图6B是表示使用本发明实施形态的金属纳米油墨进行芯片焊接时向半导体芯片的线路板上进行叠合的说明图。
图6C是表示使用本发明实施形态的金属纳米油墨进行芯片焊接时向半导体芯片的线路板上进行叠合的说明图。
图6D是表示使用本发明实施形态的金属纳米油墨进行芯片焊接时向半导体芯片的线路板上进行叠合的说明图。
图7A是表示使用本发明实施形态的金属纳米油墨进行芯片焊接时形成接合凸块的说明图。
图7B是表示使用本发明实施形态的金属纳米油墨进行芯片焊接时形成接合凸块的说明图。
图8是表示使用本发明实施形态的金属纳米油墨进行芯片焊接时将半导体芯片和线路板夹入到加压加热机构状态的说明图。
图9A是表示使用本发明实施形态的金属纳米油墨进行芯片焊接时半导体芯片和线路板的各电极的加压烧结的说明图。
图9B是表示使用本发明实施形态的金属纳米油墨进行芯片焊接时半导体芯片和线路板的各电极的加压烧结的说明图。
图9C是表示使用本发明实施形态的金属纳米油墨进行芯片焊接时半导体芯片和线路板的各电极的加压烧结的说明图。
图10A是表示使用以往技术的金属纳米油墨进行芯片焊接的接合金属截面的说明图。
图10B是表示使用本发明的金属纳米油墨进行芯片焊接的接合金属截面的说明图。
符号说明如下：
12-半导体芯片、12a，19a-电极、12-线路板(substrate)、26-喷射头、26a-喷射嘴、54-筒夹(collet)、57a，57b-高度传感器、57c-上下二视野照相机、80-加压加热机构、82a-上部保持板、82b-下部保持板、85-间隙传感器、86a，86b-温度传感器、89a，89b-加热器、100-金属纳米油墨、101-金属纳米粒子、102-分散剂、103-包覆金属纳米粒子、105-有机溶剂、110-微液滴、121-氧气泡、122-溶解氧、125-氧纳米气泡、131-容器、132-氧注入喷嘴、133-罐、134-配管、135-吸入管、136-循环泵、137-排出管、138-氧注入喷嘴、140-喷射器、141-喷嘴、142-芯子、143-间隙、145-氧浓度传感器、150-氧注入装置、200-凸块、250-接合凸块、260-气泡、300-接合金属、301-块(bulk)金属、302-多孔结构部。
具体实施方式
下面参照附图说明本发明较佳实施形态。如图1所示，本实施形态的金属纳米油墨100包括有机溶剂105，包覆金属纳米粒子103，混合在有机溶剂105中的氧气泡121，以及溶解在有机溶剂105中的溶解氧。所述包覆金属纳米粒子103包含使得导电性金属微细化的金属纳米粒子101以及涂布在金属纳米粒子101表面、使得金属纳米粒子101互相不接触地保持分散状态的分散剂102，混合在有机溶剂105中。金属纳米粒子101直径为5-50nm左右大小。作为构成金属纳米粒子101的微细化的导电性金属，可以使用金、银、铜、铂、钯、镍、铝等。作为涂布在金属纳米粒子101表面的分散剂102，可以使用烷基胺、烷基硫醇(alkanethiol)、烷基二醇(alkanediol)等。液体的有机溶剂105系不会在室温附近容易蒸腾散发的、具有比较高沸点的非极性溶剂或低极性溶剂，可以使用在例如萜品醇、干洗溶剂汽油、二甲苯、甲苯、十四烷、十二烷等的分散溶剂中含有起着作为有机粘结剂功能的热硬化性树脂成份的有机溶剂。由分散剂102涂布表面的包覆金属纳米粒子103系例如直径100nm左右大小，为比金属纳米粒子101大的微粒。
这种金属纳米油墨100按如下方法制造。首先，将分散剂102涂布在使得导电性金属微细化的金属纳米粒子101的表面，准备包覆金属纳米粒子103，使得所定量的所述包覆金属纳米粒子103混合在有机溶剂105中。此后，进行粘度调整，成为没有混合氧气泡121的金属纳米油墨100。接着，如图2所示，将没有混合氧气泡121的金属纳米油墨100放入容器131中，氧注入喷嘴132从液面插入金属纳米油墨100中，通过该氧注入喷嘴132将氧气注入金属纳米油墨100中。注入的氧的一部分溶解在有机溶剂105中，成为溶解氧122，大多数氧成为气泡分散到有机溶剂105中。然后，大的气泡上升到液面排出到大气，仅仅小的气泡作为氧气泡121残存在有机溶剂105中，能制造在有机溶剂105中包含包覆金属纳米粒子103、氧气泡121、以及溶解氧122的金属纳米油墨100。并且，若注入氧所定时间，例如10小时等，则成为内包适当氧的金属纳米油墨100。
如图3所示，金属纳米油墨100也可以包含氧纳米气泡125，代替氧气泡121，或包含氧气泡121以及氧纳米气泡125。氧纳米气泡125系直径与包覆金属纳米粒子103相同的具有非常微小直径的气泡。包含图3所示氧纳米气泡125的金属纳米油墨100可以按以下方法制造：通过图4所示那样的方法使得氧纳米气泡125内包在有机溶剂105中后，将分散剂102涂布在使得导电性金属微细化的金属纳米粒子101的表面，形成包覆金属纳米粒子103，使得所定量的所述包覆金属纳米粒子103混合在有机溶剂105中。
如图4所示，氧注入装置150包括存积有机溶剂105的罐133，使得有机溶剂105循环的循环泵136，连接罐133和循环泵136的吸入管135，循环泵136的排出管137，设在排出管137的氧注入喷嘴138，设在氧注入喷嘴138和罐133之间、剪切从氧注入喷嘴138注入的氧气泡使其为100nm左右的氧纳米气泡125的喷射器140，以及连接喷射器140和罐133的配管134。又，安装氧浓度传感器145，检测存积在罐133的有机溶剂105的氧浓度。
存积在罐133的有机溶剂105从吸入管135吸入到循环泵136被加压，排出到排出管137。氧从氧注入喷嘴138作为泡注入排出到排出管137的有机溶剂105。注入的氧的一部分溶解在有机溶剂105，成为溶解氧122。没有溶解的氧以大的泡的状态流入喷射器140。喷射器140由设有前端细的锥状孔的喷嘴141以及设在喷嘴141内部的芯子142构成，包含氧气泡的有机溶剂105高速流过在喷嘴141和芯子142之间形成的圆锥筒面的间隙143，因间隙143的湿润面和泡的剪切力，使得泡成为微小的氧纳米气泡125。在从喷射器140通过配管134流出到罐133的有机溶剂105中，包含溶解氧122，氧纳米气泡125，以及比其大的氧的泡。大的氧的泡向着罐133的有机溶剂105的液面上升，从液面向大气散逸。氧纳米气泡125残留在有机溶剂105中。并且，虽然比氧纳米气泡125大但短时间里不能从有机溶剂105的液面散逸程度的氧的泡再次与有机溶剂105一起吸入上述吸入管135，通过喷射器140，其一部分成为氧纳米气泡125。并且，若使得以所定时间在包含该喷射器140的循环管路循环，则产生包含氧纳米气泡125和溶解氧122的有机溶剂105。这时，从氧注入喷嘴138注入的氧的量可以根据安装在罐133的氧浓度传感器145检测到的有机溶剂105中的氧浓度作适当调整。
这样制造的包含在有机溶剂105的氧纳米气泡125的直径非常小，因此，即使经过长时间也能继续残留在有机溶剂105中。又，若使得氧混合到有机溶剂105中，以得到氧纳米气泡125，则可以将有机溶剂105中的氧浓度设为饱和浓度以上的过饱和，能使得多量氧包含在有机溶剂105中。
上述说明的方法是使得粘性低的有机溶剂105通过喷射器140，使得氧纳米气泡125混合后，在有机溶剂105中，使得包覆金属纳米粒子103混合，因此，若在有机溶剂105中使得包覆金属纳米粒子103混合，则粘性变大，不能通过喷射器140使得氧气泡混合在金属纳米油墨100中，在这种场合，上述说明的方法特别有效。
接着，将分散剂102涂布在使得导电性金属微细化的金属纳米粒子101的表面，形成包覆金属纳米粒子103，使得所定量的所述包覆金属纳米粒子103混合在包含氧纳米气泡125的有机溶剂105中，制造金属纳米油墨100。氧纳米气泡125由于微粒径非常小，因此，上述混合时几乎不会散逸到有机溶剂105外部，能制造内包多量氧的金属纳米油墨100。又，也可以增多分散剂102的量，或在有机溶剂105添加调整粘性的成份，成为具有适合在后文说明的喷射头形状的粘度的金属纳米油墨100。
参照图5A至图9C，说明使用上述说明制造的金属纳米油墨100使得线路板(基板)19的电极19a和半导体芯片12的电极12a接合的芯片焊接方法。
该芯片焊接方法是用于使得半导体芯片12的电极12a和线路板19的电极19a以及/或半导体芯片12的电极12a和另一半导体芯片12的电极12a接合的芯片焊接方法，使得由分散剂102涂布表面的金属纳米粒子101和氧混合在有机溶剂105中，形成金属纳米油墨100，喷射上述金属纳米油墨100的微液滴110，在电极12a、19a上形成凸块200，将形成凸块200的半导体芯片12面朝下置于形成凸块200的线路板19以及/或形成凸块200的另一半导体芯片12上，使得半导体芯片12的电极12a和线路板19的电极19a以及/或半导体芯片12的电极12a和另一半导体芯片12的电极12a通过凸块200叠合后，对各电极12a、19a间的凸块200加压及加热，使得凸块200的金属纳米粒子101加压烧结，电气接合各电极12a、19a之间。下面，对此进行详细说明。
如图5A所示，从喷射头26的喷射嘴26a向着半导体芯片12的电极12a多次喷射金属纳米油墨100的微液滴110，在电极12a上形成凸块200。
如图5B所示，从喷射头26的喷射嘴26a最初喷射到电极12a上的金属纳米油墨100的微液滴110，在电极12a上蔓延成薄膜状。此后的金属纳米油墨100的微液滴110附着在上述蔓延在电极12a上的金属纳米油墨100的膜上，因此，与直接附着在电极12a表面的最初微液滴110相比，其蔓延少，在电极12a表面上形成若干隆起状。再后面的金属纳米油墨100的微液滴110与上述二个微液滴110相比，蔓延更少，逐渐隆起变大。这样，若将金属纳米油墨100的微液滴110顺序喷射到电极12a上，则隆起逐渐变大，通过多次喷射，如图5B所示，形成越往上倾斜越大的圆锥形的凸块200。凸块200的从电极12a起算的高度为H1。通过在喷射头26使用用于喷射器那样的喷射头，能在短时间喷射多量的微液滴110叠层。当通过喷射头进行喷射场合，将金属纳米油墨100的粘度调整为比较低。又，当粘度高场合，或使用包含比氧纳米气泡125大的氧气泡121的金属纳米油墨100场合，为了避免在喷射头26发生气蚀，可以使用分配器等将液滴供给到电极12a上，形成凸块200。
通过与向电极12a上形成凸块200相同的方法，也在线路板19的电极19a上形成凸块200。
若在半导体芯片12的电极12a和线路板19的电极19a上分别形成凸块200，则如图6A所示，使得半导体芯片12反转，吸引、保持在筒夹54上，用高度传感器57a检测半导体芯片12的表面高度。又，用高度传感器57b检测通过真空吸附固定在焊接台上的线路板19的表面高度位置。接着，根据由各高度传感器57a、57b取得的高度传感器57a和半导体芯片12的距离数据以及高度传感器57b和线路板19的距离数据，计算半导体芯片12的表面和线路板19的表面的间隔H0。
如图6B所示，使得筒夹54移动，以便使得通过真空吸附保持在筒夹54的半导体芯片12的电极12a上形成的凸块200的位置与线路板19的电极19a上形成的凸块200的位置一致。接着，使得上下二视野照相机57c进入半导体芯片12和线路板19之间，对半导体芯片12表面的对位标记和线路板19表面的对位标记进行摄像，从所摄图像检测上下二视野照相机57c的光轴和各对位标记的位置偏移，使得筒夹54移动该偏移量，使得半导体芯片12的电极12a的位置和线路板19的电极19a的相对位置一致。
如图6C及图7A所示，使得半导体芯片12面朝下，通过筒夹54，半导体芯片12的电极12a位于线路板19的电极19a的正上方，使得成为形成在各电极12a、19a的高度H1的各凸块200不接触程度的高度，之后，如图6D所示，开放筒夹54真空，使得半导体芯片12的电极12a和线路板19的电极19a通过凸块200叠合。在此，筒夹54以及使得筒夹54移动的没有图示的筒夹移动装置构成叠合机构。如图7B所示，若叠合，则形成在各电极12a、19a上的凸块200成为一体，成为接合凸块250，半导体芯片12成为由接合凸块250支承状态。接合凸块250的高度成为比叠合前的各凸块200的合计高度2×H1低的高度H2。但是，该高度H2成为比后文说明的接合金属300的高度H3高的高度。
若半导体芯片12的电极12a与线路板19的电极19a叠合，则线路板19被运送到加压加热机构80。如图8所示，加压加热机构80边通过间隙传感器85检测上部保持板82a和下部保持板82b的间隔，边将半导体芯片12和线路板19夹入该间隙，使得上部保持板82a和下部保持板82b的间隔成为所定间隔H5。在此，所定间隔H5系在图9A至图9C所示的、形成在半导体芯片12的电极12a和线路板19的电极19a之间的接合金属300的所定高度H3加上各电极12a、19a以及半导体芯片12的厚度和线路板19的厚度。图9A至图9C所示的接合金属300的所定高度H3优选10μm至15μm。高度H3比前文说明的接合凸块250的高度H2低，因此，当将半导体芯片12和线路板19夹入加压加热机构80的上部保持板82a和下部保持板82b之间结束时，接合凸块250被压缩(H2-H3)，由此，接合凸块250被加压。
若向上部保持板82a和下部保持板82b之间夹入半导体芯片12和线路板19结束，则将加热器89a、89b设为接通，开始加热接合凸块250。通过温度传感器86a、86b检测上部保持板82a的温度和下部保持板82b的温度，调整对加热器89a、89b的施加电压，使得接合凸块250的温度成为150℃至250℃。通过加热器89a、89b加热接合凸块250期间，各电极12a、19a的高度方向间隔通过上部保持板82a、下部保持板82b保持为高度H3。
如图9A所示，若接合凸块250如波状线箭头所示那样被加热，则作为有机物的分散剂102因热分解蒸腾发散，金属纳米粒子101之间接触。若金属纳米粒子101接触，则在比通常的金属熔敷温度低的150℃左右温度互相熔敷，形成金属熔接(link)。并且，残存在因金属纳米粒子101的结合产生的熔接的间隙的分散剂102或有机溶剂105被挤出到熔接的外侧。又，分散剂102、有机溶剂105因热从接合凸块250表面向大气挥发、蒸腾发散，同时，含在其中的碳成份与包含在接合凸块250中的溶解氧122、氧气泡121、氧纳米气泡125结合，成为二氧化碳。气体的二氧化碳比液体状态的分散剂102、有机溶剂105的流动性好，穿过金属纳米粒子101的熔接之间，边移动到接合凸块250的外周侧边结合，成为气泡260。该二氧化碳的气泡260因加热而膨胀，欲扩展各电极12a、19a的高度方向间隔，但是，各电极12a、19a的高度方向间隔通过上部保持板82a、下部保持板82b保持为高度H3，因此，如图9A的空白箭头所示，相当于压力上升的部分起着作为压缩接合凸块250的加压力的作用。
如图9B所示，因内部压力上升，接合凸块250朝横向扩展，内部产生的二氧化碳的气泡260压塌为横长，逐渐沿横向移动，从接合凸块250的侧面排出到外部。并且，若如空白箭头所示，被加压所定时间，如波状线箭头所示被加热，则如图9C所示，有机溶剂105和分散剂102挥发或作为二氧化碳排出，接合凸块250的金属纳米粒子101之间互相接合，成为块状接合金属300，各电极12a、19a电气接合。
这样，包含在分散剂102或有机溶剂105的碳成份在烧结时与氧结合，成为二氧化碳向大气排出。但是，由金属纳米油墨100成形的接合凸块250的外周的圆筒面与大气接触，上下面因与各电极12a、19a的面相接，从表面取入接合凸块250内部的氧的量少，当内部没有以氧气泡121、氧纳米气泡125那样形式内包氧的场合，在不容易取入氧的接合凸块250的内部，用于使得碳成份成为二氧化碳的氧不足，碳成份不成为二氧化碳而残留。因此，如图10A所示，烧结后的接合金属300尽管在外皮部分形成致密的块金属301，而在内部，在金属纳米粒子101结合的熔接之间，碳成份等的金属以外物质作为空隙残留，成为多孔结构部302。多孔结构部302电阻大，机械强度低，因此，接合性降低。
这样，若在金属纳米油墨100中，以溶解氧122、氧气泡121、氧纳米气泡125那样的形式，由内包氧的金属纳米油墨100成形凸块200，接合成形接合凸块250，则接合凸块250内部含有许多氧成份，因此，包含在分散剂102、有机溶剂105的碳成份能作为二氧化碳排出到外部。因此，能抑制加压烧结时发生空隙，如图10B所示，接合金属300的块金属301部分从外皮部分直到内部，且在最内部都成形块金属301部分。并且，包含空隙的多孔结构部302的区域与图10A状态相比，非常少，能成形电阻低、机械强度大的接合金属300。又，若在金属纳米油墨100中，以溶解氧122、氧气泡121、氧纳米气泡125那样的形式，由内包氧的金属纳米油墨100进行接合，则能抑制残存没有去除分散剂的、未反应的金属纳米粒子，能增多块金属301的部分。
希望内包在金属纳米油墨100的氧的量尽可能多，较好的是，使得氧内包为有机溶剂105的氧的饱和浓度以上。根据试验结果，将通过参照图2说明的吹入氧的方法制造的包含氧气泡121、溶解氧122的金属纳米油墨100由分配器提供，在半导体芯片12的电极12a和线路板19的电极19a形成凸块200，使得半导体芯片12反转，使得各电极12a、19a的位置对位后叠合，作为接合凸块250，此后，通过加压加热机构80加压烧结场合，当注入氧的时间短至1小时左右，金属纳米油墨100的氧的内包量少的场合，加压烧结后的接合金属300成为如图10A所示那样的多孔结构部302多的状态。另一方面，当注入氧的时间长至10小时左右，金属纳米油墨100的氧的内包量多的场合，加压烧结后的接合金属300成为如图10B所示那样的多孔结构部302少、块金属301多的状态。又，根据试验结果，若有机溶剂105内包饱和浓度的5倍以上的氧，则能得到提高烧结性的结果。
如上所述，本实施形态的金属纳米油墨100当加压烧结时能抑制产生空隙，具有能成形电阻低、机械强度大的接合金属300的效果。
在上述说明的使用金属纳米油墨100的接合方法中，说明将半导体芯片12的电极12a接合在线路板19的电极19a的场合，但是，本发明也可以使得半导体芯片12的电极12a反转叠合在另一半导体芯片12的电极12a上接合。又，也可以电极12a是贯通半导体芯片12厚度方向的贯通电极，不反转半导体芯片12，通过凸块200叠合各电极12a后，通过加压烧结，连接各贯通电极之间，三维安装半导体芯片12。
本发明并不局限于上述说明的实施形态，包含不脱离由权利要求书规定的本发明技术范围或本质的全部变更及修正，它们都属于本发明的保护范围。

Claims (7)

1.一种金属纳米油墨,用于通过加压烧结使得半导体芯片的电极和线路板的电极或半导体芯片的电极和另一半导体芯片的电极接合;其特征在于:
使得由分散剂涂布表面的金属纳米粒子和氧混合在有机溶剂中,进行调整,使得有机溶剂中的氧浓度为过饱和。
2.一种金属纳米油墨的制造方法,用于通过加压烧结使得半导体芯片的电极和线路板的电极或半导体芯片的电极和另一半导体芯片的电极接合;其特征在于,该金属纳米油墨的制造方法包括:
金属纳米粒子混合工序,将由分散剂涂布表面的金属纳米粒子混合在有机溶剂中;
氧注入工序,将氧注入有机溶剂中。
3.根据权利要求2所述的金属纳米油墨的制造方法,其特征在于:
氧注入工序将氧作为纳米气泡注入有机溶剂中。
4.根据权利要求2所述的金属纳米油墨的制造方法,其特征在于:
在金属纳米粒子混合工序后进行氧注入工序。
5.根据权利要求2所述的金属纳米油墨的制造方法,其特征在于:
在金属纳米粒子混合工序前进行氧注入工序。
6.一种芯片焊接方法,接合半导体芯片的电极和线路板的电极或半导体芯片的电极和另一半导体芯片的电极,其特征在于,该芯片焊接方法包括:
叠合工序,将由分散剂涂布表面的金属纳米粒子和成为纳米气泡的氧混合在有机溶剂中,形成金属纳米油墨,射出所述金属纳米油墨的微液滴,在半导体芯片的电极上形成凸块,射出所述金属纳米油墨的微液滴,在线路板的电极上形成凸块,射出所述金属纳米油墨的微液滴,在另一半导体芯片的电极上形成凸块,将上述形成凸块的半导体芯片面朝下设置在上述形成凸块的线路板或上述形成凸块的另一半导体芯片上,通过凸块叠合半导体芯片的电极和线路板的电极或半导体芯片的电极和另一半导体芯片的电极;以及
加压烧结工序,加压并加热各电极间的凸块,使得凸块的金属纳米粒子加压烧结,电气接合各电极。
7.一种芯片焊接装置,接合半导体芯片的电极和线路板的电极或半导体芯片的电极和另一半导体芯片的电极,其特征在于,该芯片焊接装置包括:
喷射头,将由分散剂涂布表面的金属纳米粒子和成为纳米气泡的氧混合在有机溶剂中,形成金属纳米油墨,射出所述金属纳米油墨的微液滴,在电极上形成凸块;
叠合机构,将形成凸块的半导体芯片面朝下设置在射出金属纳米油墨的微液滴在电极上形成凸块的线路板,或射出金属纳米油墨的微液滴在电极上形成凸块的另一半导体芯片上,通过凸块叠合半导体芯片的电极和线路板的电极或半导体芯片的电极和另一半导体芯片的电极;以及
加压加热机构,加压并加热各电极间的凸块,使得凸块的金属纳米粒子加压烧结,电气接合各电极。
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