CN102096534A - Production method of electrode of capacitive touch screen - Google Patents
Production method of electrode of capacitive touch screen Download PDFInfo
- Publication number
- CN102096534A CN102096534A CN 201010621263 CN201010621263A CN102096534A CN 102096534 A CN102096534 A CN 102096534A CN 201010621263 CN201010621263 CN 201010621263 CN 201010621263 A CN201010621263 A CN 201010621263A CN 102096534 A CN102096534 A CN 102096534A
- Authority
- CN
- China
- Prior art keywords
- electrode
- photoresist
- thin film
- film layer
- ito thin
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title abstract 2
- 229910052751 metal Inorganic materials 0.000 claims abstract description 40
- 239000002184 metal Substances 0.000 claims abstract description 40
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 39
- 239000010409 thin film Substances 0.000 claims abstract description 21
- 238000000034 method Methods 0.000 claims abstract description 12
- 238000005530 etching Methods 0.000 claims abstract description 11
- 239000011248 coating agent Substances 0.000 claims abstract description 10
- 238000000576 coating method Methods 0.000 claims abstract description 10
- 239000000758 substrate Substances 0.000 claims abstract description 7
- 238000007747 plating Methods 0.000 claims abstract description 5
- 208000034189 Sclerosis Diseases 0.000 claims description 7
- 230000015572 biosynthetic process Effects 0.000 claims description 4
- 238000005253 cladding Methods 0.000 claims description 4
- 239000002131 composite material Substances 0.000 abstract 3
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 13
- 238000010586 diagram Methods 0.000 description 12
- 239000000463 material Substances 0.000 description 4
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 3
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 3
- 239000002253 acid Substances 0.000 description 3
- 239000011651 chromium Substances 0.000 description 3
- 229910052804 chromium Inorganic materials 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 229910052750 molybdenum Inorganic materials 0.000 description 3
- 239000011733 molybdenum Substances 0.000 description 3
- OAYXUHPQHDHDDZ-UHFFFAOYSA-N 2-(2-butoxyethoxy)ethanol Chemical compound CCCCOCCOCCO OAYXUHPQHDHDDZ-UHFFFAOYSA-N 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 2
- 239000004411 aluminium Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 230000004907 flux Effects 0.000 description 2
- -1 hexanol amine Chemical class 0.000 description 2
- ZSIAUFGUXNUGDI-UHFFFAOYSA-N n-hexyl alcohol Natural products CCCCCCO ZSIAUFGUXNUGDI-UHFFFAOYSA-N 0.000 description 2
- 150000007530 organic bases Chemical class 0.000 description 2
- 238000001259 photo etching Methods 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 239000011135 tin Substances 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
Images
Landscapes
- Manufacturing Of Electric Cables (AREA)
Abstract
The invention relates to a production method of an electrode of a capacitive touch screen, which is characterized by comprising the following steps of: (1), plating an ITO (Indium Tin Oxide) thin film layer on a substrate; (2), plating a metal layer on the ITO thin film layer; (3), coating the metal layer with photoresist; (4), exposing the photoresist; (5), developing and hardening the photoresist; (6), etching the metal layer; (7), removing the photoresist; (8), coating a secondary photoresist to cover the etched metal layer and the ITO thin film layer; (9), exposing the secondary photoresist; (10), developing and hardening the secondary photoresist; (11), etching the ITO thin film layer to form a composite electrode pattern of the metal layer and the ITO thin film layer, and the secondary photoresist; (12), removing the photoresist to form a composite electrode of a metal electrode and an ITO electrode. The method provided by the invention has the following advantages that: the composite electrode of the metal layer and the ITO thin film layer can be produced by the method, and the electrode also can be used even the surface of the metal layer is scratched and broken. With the method, quality of the electrode is improved, and durability of the electrode is strengthened.
Description
Technical field
The present invention relates to the method for making of the touch-screen in the electronic devices and components, particularly a kind of capacitance touch screen method for making its electrode.
Background technology
Capacitance touch screen can be realized multiple spot and touch sensible accurately, and simple in structure, transmittance is high, is the main flow direction of current demonstration touch technology development.The touch sensible parts of capacitance touch screen are generally the induction matrix of a plurality of column electrodes, the interlaced formation of row electrode, and column electrode and row electrode are arranged on the same one side of a slice transparency carrier.The method for making of typical metal electrode comprises: the first step: metal-coated membrane; Second step: coating photoresist; The 3rd step: exposure; The 4th step: develop, harden; The 5th step: etching metal; The 6th step: remove photoresist, form the metal electrode of the individual layer of design configuration.Because metal electrode is softer, is easier to be scratched at glass surface, opens circuit thereby cause, and causes touch screen from being damaged.Retrieve at the problems referred to above, still find no the solution of effect.
Summary of the invention
Thereby purpose of the present invention is exactly to be easier to be scratched the shortcoming that causes touch screen from being damaged, a kind of capacitance touch screen method for making its electrode that provides at the surface that existing single-layer metal electrode exists.
To achieve these goals, the present invention has adopted following technical scheme:
A kind of capacitance touch screen method for making its electrode is characterized in that may further comprise the steps:
(1), plating ito thin film layer on substrate;
(2), metal cladding on the ito thin film layer;
(3), be coated with photoresist on the metal level;
(4), to resist exposure;
(5), to photoresist developing and sclerosis;
(6), etch metal layers;
(7), remove photoresist;
(8), be coated with the secondary photoresist, with etched metal level and the covering of ito thin film layer;
(9), to the secondary resist exposure,
(10), to the secondary photoresist developing and the sclerosis,
(11), etching ito thin film layer, form the combination electrode figure and the secondary photoresist of metal level and ito thin film layer;
(12), remove photoresist, the combination electrode of formation metal electrode and ITO electrode.
The invention has the advantages that: can produce the combination electrode of metal level and ito thin film layer by method of the present invention, disconnected even the metal level on surface is scratched, draws, electrode still can use.The quality of electrode, the durability of intensifier electrode have been improved with this present invention.
Description of drawings:
Fig. 1 is the synoptic diagram of plating ito thin film layer of the present invention;
Fig. 2 is the synoptic diagram of metal cladding of the present invention;
Fig. 3 is the synoptic diagram of coating photoresist on the metal level of the present invention;
Fig. 4 is the synoptic diagram of the present invention to photoresist 4 exposures;
Fig. 5 is the synoptic diagram that the present invention develops and hardens photoresist 4;
Fig. 6 is the synoptic diagram of etch metal layers of the present invention;
Fig. 7 is the synoptic diagram that the present invention removes photoresist;
Fig. 8 is the synoptic diagram that the present invention is coated with the secondary photoresist;
Fig. 9 is the synoptic diagram of the present invention to secondary coating resist exposure;
Figure 10 is the synoptic diagram of the present invention to secondary photoresist developing and sclerosis;
Figure 11 is the synoptic diagram of etching ito thin film layer of the present invention;
Figure 12 is that the present invention goes secondary to remove the synoptic diagram of photoresist;
Embodiment:
A kind of capacitance touch screen method for making its electrode provided by the invention may further comprise the steps:
The first step: as shown in Figure 1, vacuum sputtering ito thin film 3 on the substrate 1, vacuum tightness: 0.01～0.5Pa.Temperature: 220～350 ℃, thickness 5nm～25nm of ITO.Substrate 1 can adopt transparent glass, PET, organic glass, also can be opaque material.
Second step: as shown in Figure 2, vacuum sputtering metal cladding 2, metal level 2 can be molybdenum, aluminium, chromium, zinc, tin etc.Vacuum tightness 0.01～0.5Pa.Temperature: 40～250 ℃, as the thickness of the molybdenum that contacts with ITO: 10nm～50nm; Thickness 100nm～the 250nm. of aluminium; The thickness of the molybdenum of air surface: 20nm～80nm.
The 3rd step: as shown in Figure 3, the coating photoresist.With running roller or rotary coating, in thickness 500～2000nm. homogeneity 10%, preliminary drying temperature: 60～100 ℃.
The 4th step: as shown in Figure 4, photoetching electrode pattern on litho machine.Ultraviolet wavelength: 365nm, luminous flux: 60～150mj.The light shield 5 of metal electrode pattern can be the film or chromium plate, apart from 20 microns～200 microns of the sizes of substrate.
The 5th step: as shown in Figure 5, develop and sclerosis, form electrode pattern.Adopt organic base, concentration 1～4%, perhaps NAOH, concentration 0.1～0.8%, temperature: 20～40 ℃, 20 seconds～300 seconds time, hardening temperature: 80～120 ℃. 20～50 minutes time.
The 6th step: as shown in Figure 6, etch metal layers 2 forms metal electrode 2.Use the weak acid etching metal.Etching period was controlled in 10 minutes.In ten minutes, weak acid can etching ITO.Weak acid is formed: phosphoric acid (50%～80%), acetic acid (5%～15%).
The 7th step: as shown in Figure 7, remove photoresist 4.Materials used: organic solution (pressing (10%～20%)) with butyl carbitol (80～90%) and hexanol amine, in 5 minutes time, use the pure water rinsing.
The 8th step: as shown in Figure 8, coating secondary photoresist 4a.With running roller or rotary coating, thickness 1000～2000nm, in the homogeneity 10%, preliminary drying temperature: 60～100 ℃.
The 9th step: as shown in Figure 9, exposure photo-etching.Ultraviolet wavelength: 365nm, luminous flux: 60～150mj.The light shield 6 of ITO pattern can be the film or chromium plate, and apart from 20 microns～200 microns of the sizes of substrate, aligning accuracy is according to designing requirement, must guarantee that post-develop carves glue and cover metal electrode fully.Aligning accuracy is greater than 30% of the aligning accuracy of equipment maximum.
The tenth step: as shown in figure 10, develop and sclerosis.Adopt organic base, concentration 1～4%, perhaps NAOH, concentration 0.1～0.8%, temperature: 20～40 ℃, 20 seconds～300 seconds time, hardening temperature: 80～120 ℃, 20～50 minutes time.
The 11 step: as shown in figure 10, etching ITO, the combination electrode and the secondary photoresist 4a of formation ito thin film layer 3 and metal electrode 2.Etching materials used: HCL10%～20%+HNO32%～10%.Temperature: 40～60 ℃, the time: 120～600 seconds.
The 12 step: remove secondary photoresist 4a, form the combination electrode of ITO electrode 3 and metal electrode 2.Materials used: organic solution (pressing (10%～20%)) with butyl carbitol (80～90%) and hexanol amine. in 5 minutes time.Use the pure water rinsing.
Claims (1)
1. capacitance touch screen method for making its electrode is characterized in that may further comprise the steps:
(1), plating ito thin film layer (3) on substrate 1;
(2), go up metal cladding (2) at ito thin film layer (3);
(3), metal level (2) is gone up coating photoresist (4);
(4), photoresist (4) is exposed;
(5), photoresist (4) is developed and sclerosis;
(6), etch metal layers (2);
(7), remove photoresist (4);
(8), be coated with secondary photoresist (4a), with etched metal level (2) and ito thin film layer (3) covering;
(9), secondary photoresist (4a) is exposed;
(10), secondary photoresist (4a) is developed and sclerosis;
(11), etching ito thin film layer (3), form the combination electrode figure and the secondary photoresist of metal level (2) and ito thin film layer (3);
(12), remove photoresist (4a), the combination electrode of formation metal electrode (2) and ITO electrode (3).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201010621263 CN102096534A (en) | 2010-12-31 | 2010-12-31 | Production method of electrode of capacitive touch screen |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201010621263 CN102096534A (en) | 2010-12-31 | 2010-12-31 | Production method of electrode of capacitive touch screen |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN102096534A true CN102096534A (en) | 2011-06-15 |
Family
ID=44129646
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 201010621263 Pending CN102096534A (en) | 2010-12-31 | 2010-12-31 | Production method of electrode of capacitive touch screen |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN102096534A (en) |
Cited By (21)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102426413A (en) * | 2011-11-04 | 2012-04-25 | 牧东光电（苏州）有限公司 | Ultraviolet laser curing wiring method |
| CN102508379A (en) * | 2011-11-07 | 2012-06-20 | 南京中电熊猫液晶显示科技有限公司 | Liquid crystal display device and method for manufacturing same |
| CN102691093A (en) * | 2012-06-20 | 2012-09-26 | 哈尔滨工业大学 | Method for rapidly corroding and patterning indium tin oxide surface by using electrochemical technology |
| CN102945096A (en) * | 2012-11-19 | 2013-02-27 | 天津市中环高科技有限公司 | Manufacturing method of metal logo on single-layered glass capacitive touch screen |
| CN102981297A (en) * | 2012-10-29 | 2013-03-20 | 晟光科技股份有限公司 | Implement method of ON CELL |
| CN103034384A (en) * | 2012-12-09 | 2013-04-10 | 烟台正海科技有限公司 | Touch panel manufacture scheme |
| CN103186309A (en) * | 2013-04-15 | 2013-07-03 | 芜湖长信科技股份有限公司 | Capacitive touch screen and production process thereof |
| CN103309510A (en) * | 2013-06-08 | 2013-09-18 | 南昌欧菲光科技有限公司 | Touch screen electrode manufacturing method |
| CN103324370A (en) * | 2013-05-20 | 2013-09-25 | 晟光科技股份有限公司 | Manufacturing method of OGS (one glass solution) capacitive touch screen by using full silver paste via hole |
| CN103324371A (en) * | 2013-05-20 | 2013-09-25 | 晟光科技股份有限公司 | Manufacturing method of OGS (one glass solution) capacitive touch screen |
| CN103365477A (en) * | 2013-07-18 | 2013-10-23 | 东莞市平波电子有限公司 | A kind of OGS touch panel and manufacturing method thereof |
| CN103425372A (en) * | 2013-07-25 | 2013-12-04 | 浙江金指科技有限公司 | Metal etching process of capacitive touch screens |
| CN103582285A (en) * | 2012-07-31 | 2014-02-12 | 厦门中天启航电子科技有限公司 | ITO electric conducting film current converging electrode and manufacturing method thereof |
| CN103576954A (en) * | 2012-07-26 | 2014-02-12 | 介面光电股份有限公司 | Composite sensing electrode structure for touch panel |
| CN103605448A (en) * | 2013-11-28 | 2014-02-26 | 广东泰通科技股份有限公司 | Manufacturing method for integrally forming circuit diagram of film-structure capacitive touch screen sensor and product manufactured through manufacturing method |
| CN103809804A (en) * | 2012-11-01 | 2014-05-21 | 杰圣科技股份有限公司 | Manufacturing method of touch panel |
| CN103984457A (en) * | 2014-05-06 | 2014-08-13 | 无锡格菲电子薄膜科技有限公司 | Double-layer capacitive touch screen and preparation method thereof |
| CN104238782A (en) * | 2013-06-07 | 2014-12-24 | 福建省辉锐材料科技有限公司 | Touch screen electrode preparation method |
| CN104850281A (en) * | 2014-02-18 | 2015-08-19 | 谭本志 | Manufacturing process of capacitive touch screen |
| WO2016165260A1 (en) * | 2015-04-17 | 2016-10-20 | 京东方科技集团股份有限公司 | Capacitive touch screen and manufacturing process thereof, and touch display panel |
| CN110690167A (en) * | 2019-08-28 | 2020-01-14 | 晟光科技股份有限公司 | Manufacturing method based on TFT array substrate |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1257304A (en) * | 1998-12-12 | 2000-06-21 | 三星电子株式会社 | Thin film transistor array panel for liquid crystal display and making method thereof |
| CN1791287A (en) * | 2004-12-17 | 2006-06-21 | 上海广电电子股份有限公司 | Method for manufacturing transparent anode and electrode lead wire of organic luminescent display unit |
| CN101303525A (en) * | 2008-06-23 | 2008-11-12 | 上海集成电路研发中心有限公司 | Double-pattern exposure process |
-
2010
- 2010-12-31 CN CN 201010621263 patent/CN102096534A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1257304A (en) * | 1998-12-12 | 2000-06-21 | 三星电子株式会社 | Thin film transistor array panel for liquid crystal display and making method thereof |
| CN1791287A (en) * | 2004-12-17 | 2006-06-21 | 上海广电电子股份有限公司 | Method for manufacturing transparent anode and electrode lead wire of organic luminescent display unit |
| CN101303525A (en) * | 2008-06-23 | 2008-11-12 | 上海集成电路研发中心有限公司 | Double-pattern exposure process |
Cited By (25)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102426413A (en) * | 2011-11-04 | 2012-04-25 | 牧东光电（苏州）有限公司 | Ultraviolet laser curing wiring method |
| CN102508379A (en) * | 2011-11-07 | 2012-06-20 | 南京中电熊猫液晶显示科技有限公司 | Liquid crystal display device and method for manufacturing same |
| CN102691093A (en) * | 2012-06-20 | 2012-09-26 | 哈尔滨工业大学 | Method for rapidly corroding and patterning indium tin oxide surface by using electrochemical technology |
| CN103576954A (en) * | 2012-07-26 | 2014-02-12 | 介面光电股份有限公司 | Composite sensing electrode structure for touch panel |
| CN103582285A (en) * | 2012-07-31 | 2014-02-12 | 厦门中天启航电子科技有限公司 | ITO electric conducting film current converging electrode and manufacturing method thereof |
| CN102981297A (en) * | 2012-10-29 | 2013-03-20 | 晟光科技股份有限公司 | Implement method of ON CELL |
| CN102981297B (en) * | 2012-10-29 | 2015-11-18 | 晟光科技股份有限公司 | The implementation method of a kind of ON CELL |
| CN103809804A (en) * | 2012-11-01 | 2014-05-21 | 杰圣科技股份有限公司 | Manufacturing method of touch panel |
| CN102945096A (en) * | 2012-11-19 | 2013-02-27 | 天津市中环高科技有限公司 | Manufacturing method of metal logo on single-layered glass capacitive touch screen |
| CN103034384A (en) * | 2012-12-09 | 2013-04-10 | 烟台正海科技有限公司 | Touch panel manufacture scheme |
| CN103186309A (en) * | 2013-04-15 | 2013-07-03 | 芜湖长信科技股份有限公司 | Capacitive touch screen and production process thereof |
| CN103324370A (en) * | 2013-05-20 | 2013-09-25 | 晟光科技股份有限公司 | Manufacturing method of OGS (one glass solution) capacitive touch screen by using full silver paste via hole |
| CN103324371A (en) * | 2013-05-20 | 2013-09-25 | 晟光科技股份有限公司 | Manufacturing method of OGS (one glass solution) capacitive touch screen |
| CN104238782A (en) * | 2013-06-07 | 2014-12-24 | 福建省辉锐材料科技有限公司 | Touch screen electrode preparation method |
| CN103309510B (en) * | 2013-06-08 | 2016-06-08 | 南昌欧菲光科技有限公司 | Touch screen electrode preparation method |
| CN103309510A (en) * | 2013-06-08 | 2013-09-18 | 南昌欧菲光科技有限公司 | Touch screen electrode manufacturing method |
| CN103365477A (en) * | 2013-07-18 | 2013-10-23 | 东莞市平波电子有限公司 | A kind of OGS touch panel and manufacturing method thereof |
| CN103365477B (en) * | 2013-07-18 | 2017-02-22 | 东莞市平波电子有限公司 | OGS touch panel and manufacturing method thereof |
| CN103425372A (en) * | 2013-07-25 | 2013-12-04 | 浙江金指科技有限公司 | Metal etching process of capacitive touch screens |
| CN103425372B (en) * | 2013-07-25 | 2017-06-20 | 深圳华视光电有限公司 | A kind of capacitive touch screen metal etch process |
| CN103605448A (en) * | 2013-11-28 | 2014-02-26 | 广东泰通科技股份有限公司 | Manufacturing method for integrally forming circuit diagram of film-structure capacitive touch screen sensor and product manufactured through manufacturing method |
| CN104850281A (en) * | 2014-02-18 | 2015-08-19 | 谭本志 | Manufacturing process of capacitive touch screen |
| CN103984457A (en) * | 2014-05-06 | 2014-08-13 | 无锡格菲电子薄膜科技有限公司 | Double-layer capacitive touch screen and preparation method thereof |
| WO2016165260A1 (en) * | 2015-04-17 | 2016-10-20 | 京东方科技集团股份有限公司 | Capacitive touch screen and manufacturing process thereof, and touch display panel |
| CN110690167A (en) * | 2019-08-28 | 2020-01-14 | 晟光科技股份有限公司 | Manufacturing method based on TFT array substrate |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN102096534A (en) | Production method of electrode of capacitive touch screen | |
| CN102929459B (en) | A kind of metal dots remains the metal electrode method for making of few capacitance touch screen | |
| CN103235659B (en) | A kind of touch panel and preparation method thereof, display device | |
| US7887997B2 (en) | Manufacturing method for conducting films on two surfaces of transparent substrate of touch control circuit | |
| US20190371830A1 (en) | Double-sided electrode structure and patterning process thereof | |
| CN105895581A (en) | TFT substrate manufacturing method | |
| US10503325B2 (en) | Display device, touch panel and method for manufacturing the same | |
| US20110063232A1 (en) | Projective-capacitive touch panel and fabrication method thereof | |
| WO2017045238A1 (en) | Touch panel and preparation method therefor | |
| CN101893971A (en) | Projected capacitive touch panel and manufacturing method thereof | |
| WO2016026180A1 (en) | Touch panel manufacturing method | |
| WO2020186989A1 (en) | Substrate and manufacturing method therefor, and touch display device | |
| CN104576523A (en) | Array substrate, production method of array substrate and display device | |
| CN103426820B (en) | Method for avoiding short circuit of metal wires in organic light emitting diode display device | |
| CN103324370A (en) | Manufacturing method of OGS (one glass solution) capacitive touch screen by using full silver paste via hole | |
| CN104882450B (en) | A kind of array substrate and preparation method thereof, display device | |
| JP2011154080A (en) | Method for forming patterns on both faces of transparent substrate | |
| CN105070765A (en) | Thin film transistor, array substrate, display device and manufacturing method | |
| CN106898616A (en) | The preparation method and TFT substrate of TFT substrate | |
| CN102629018B (en) | Color membrane substrates, tft array substrate and manufacture method thereof and display panels | |
| TW202026765A (en) | Method for double-sided patterning and method for manufacturing touch panel | |
| CN101442028B (en) | Manufacturing method of flat panel display | |
| CN109270796A (en) | The preparation method of array substrate | |
| CN103941910A (en) | Touch panel and manufacturing method thereof | |
| JP2011129272A (en) | Double-sided transparent conductive film sheet and method of manufacturing the same |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20110615 |