JP2011154080A - Method for forming patterns on both faces of transparent substrate - Google Patents

Abstract

Even if a photoresist film provided on a transparent metal film on both sides of a transparent substrate is simultaneously subjected to different pattern exposures on both sides, transparent with good positional accuracy on both sides of the transparent substrate after etching and peeling treatment Provided is a pattern forming method on both sides of a transparent substrate, which can efficiently and easily form a metal film pattern.
When forming transparent metal films 22A and 22B provided on both front and back surfaces of a transparent base material 21 in a pattern, an opaque layer 27 for shielding exposure light is formed on at least one of the transparent metal films. Then, photoresist films 23A and 23B are formed. It is a material in which an opaque layer is dissolved and removed by etching and stripping treatment.
[Selection] Figure 8

Description

  The present invention relates to a method for patterning on both sides of a transparent substrate, and in particular, even if different pattern exposure is performed on both sides simultaneously on a photoresist film provided on a transparent metal film on both sides of a transparent substrate. The present invention relates to a patterning method on both sides of a transparent substrate, which can form a desired resist film on the transparent metal film, and thus can easily form a transparent metal pattern with good positional accuracy after etching.

The photoetching method is a method widely used in the manufacture of printed wiring boards, flat displays, shadow masks and the like as a method for processing a fine pattern.
FIG. 1 is a partial cross-sectional view of an example of a double-sided printed wiring board. As shown in FIG. 1, this double-sided printed wiring board includes a base material (1), an upper surface conductor wiring (2A ′) provided on the upper surface of the base material (1), and a lower surface conductor wiring (2B) provided on the lower surface. '). This double-sided printed wiring board is manufactured using, for example, a copper clad laminate, and the base material (1) is a glass epoxy insulator, an upper surface conductor wiring (2A ′) and a lower surface conductor wiring (2B ′). Is a copper foil formed in a pattern.

  2 and 3 are explanatory views showing an example of a method of manufacturing the double-sided printed wiring board shown in FIG. This method is also applied when a thin film pattern is formed on a metal substrate or ceramic substrate as the base material (1).

Fig.2 (a) is sectional drawing of the copper clad laminated board used for manufacture of a double-sided printed wiring board. The copper-clad laminate is obtained by adhering copper foils (2A, 2B) to the upper surface and the lower surface of the substrate (1), and the copper-clad laminate is opaque and does not transmit exposure light.
First, as shown in FIG. 2B, a photoresist is applied to both sides of the copper clad laminate and dried to provide an upper photoresist film (3A) and a lower photoresist film (3B). In this example, a negative photoresist is used as the photoresist.

Next, pattern exposure is performed on the upper surface photoresist film (3A) and the lower surface photoresist film (3B) on both sides of the copper clad laminate through a photomask having a predetermined light shielding pattern.
As shown in FIG. 2 (c), the upper surface photomask (PM-A) that performs pattern exposure on the upper surface photoresist film (3A) of the copper clad laminate has the upper surface conductor wiring (2A ′) shown in FIG. An upper surface light transmitting portion (5A) corresponding to the formation is provided, and an upper surface light shielding portion (4A) is provided in the other portion.

In addition, the lower surface photomask (PM-B) that performs pattern exposure on the lower surface photoresist film (3B) of the copper-clad laminate has a lower surface light transmitting portion corresponding to the formation of the lower surface conductor wiring (2B ′) shown in FIG. (5B) is provided, and the lower surface light-shielding part (4B) is provided in the other part.
The upper surface photomask (PM-A) and the lower surface photomask (PM-B) are formed so that the upper surface conductor wiring (2A ′) and the lower surface conductor wiring (2B ′) shown in FIG. At the pattern exposure stage, the upper surface and the lower surface are aligned through a through-hole provided in the copper-clad laminate.

The portion corresponding to the formation of the upper surface conductor wiring (2A ′) of the upper surface photoresist film (3A) by the upper surface pattern exposure (LA) through the upper surface photomask (PM-A) (in FIG. 2C) , Represented by x) is the exposed and cured upper surface photoresist film (3A ′).
Further, the portion corresponding to the formation of the lower surface conductor wiring (2B ′) of the lower surface photoresist film (3B) by the lower surface pattern exposure (LB) through the lower surface photomask (PM-B) (FIG. 2C ) Are represented by an X mark, which is the exposed and cured lower surface photoresist film (3B ′).

  At this time, upper surface pattern exposure (LA) from above and lower surface pattern exposure (LB) from below are performed simultaneously. Since the copper-clad laminate composed of the base material (1) and the upper surface copper foil (2A) and the lower surface copper foil (2B) is opaque and does not transmit exposure light, upper surface pattern exposure (LA) Both the exposure light and the exposure light for the lower surface pattern exposure (LB) are applied to the upper surface photoresist film (3A) and the lower surface photoresist film (3B) without interfering with each other. .

  In FIG. 2C, between the upper surface photomask (PM-A) and the upper surface photoresist film (3A), and between the lower surface photomask (PM-B) and the lower surface photoresist film (3B). For the sake of explanation, although a space is provided, the photomask and the photoresist film may be in close contact with each other.

Next, as shown in FIG. 3 (a), development is performed with a predetermined chemical solution, hardening is performed, an upper resist film (6A) is provided on the upper surface of the copper clad laminate, and the lower surface of the copper clad laminate is provided. A lower resist film (6B) is provided. The development and the hardening process are performed simultaneously on the front and back sides.
Thus, the portions of the upper copper foil (2A) and the lower copper foil (2B) that are removed by the next etching process are exposed from the upper resist film (6A) and the lower resist film (6B), respectively. Become.

Next, as shown in FIG. 3B, an etching process (E-) using a predetermined chemical on the upper and lower surfaces of the copper clad laminate on which the upper resist film (6A) and the lower resist film (6B) are formed. A, E-B) are performed simultaneously, and the exposed upper surface copper foil (2A) and lower surface copper foil (2B) are removed.
Next, as shown in FIG. 3C, the upper resist film (6A) and the lower resist film (6B) are stripped with a predetermined processing solution, and the upper conductor wiring (2A ′) is formed on the upper surface of the substrate (1). ), And a double-sided printed wiring board having a lower surface conductor wiring (2B ′) formed on the lower surface is obtained.

As described above, since the photoetching method shown in this example uses an opaque copper-clad laminate that does not transmit exposure light, it is possible to perform different pattern exposure on both sides of the photoresist film at the same time. It is possible to perform pattern exposure on both sides of the substrate.
That is, it can be said to be a method suitably applied also when forming a thin film pattern on an opaque metal substrate or ceramic substrate as a base material. In addition, this photoetching method can satisfactorily form a fine pattern having a pattern size of, for example, 100 μm or less, and the front and back alignment can be kept within ± several μm.

  In the method shown in the above example, the upper resist film (6A) and the lower resist film (6B) shown in FIG. 3A are formed by a photolithography method using a photoresist and a photomask. Examples of other methods for forming the film include screen printing, gravure printing, and dry film resist lamination.

  FIG. 4 is a partial cross-sectional view of an example of a transparent substrate that constitutes a flat display. As shown in FIG. 4, the transparent substrate includes a transparent base material (11), a top electrode pattern (12A ′) provided on the top surface of the transparent base material (11), and a bottom electrode pattern (12B) provided on the bottom surface. ').

This transparent substrate uses, for example, a plastic film as a transparent base material (11) such as a transparent touch panel, or a transparent base material (1
1) A transparent glass plate is used as the upper electrode pattern (12A ′) on the upper surface and the lower electrode pattern (12B ′) on the lower surface of the transparent substrate (11). It is a thing.
In FIG. 4, the pattern shape formed on both surfaces of the transparent substrate (11) is the same as the pattern shown in FIG.

5 and 6 are explanatory views showing, in cross-section, an example of an attempt to manufacture the transparent substrate shown in FIG. 4 by the method shown in FIGS. 2 and 3.
In FIG. 5A, transparent conductive films (12A, 12B) are formed on the upper and lower surfaces of a transparent substrate (11), which is transparent to transmit exposure light.
As an example of this attempt, first, as shown in FIG. 5 (b), a photoresist is applied to the transparent conductive films (12A, 12B) on both sides of the transparent substrate (11) and dried to form a top photoresist film (13A). ) And a lower photoresist film (13B). In this example, a negative photoresist is used as the photoresist.

  Next, pattern exposure is performed on the upper surface photoresist film (13A) and the lower surface photoresist film (13B) on both surfaces of the transparent substrate (11) through a photomask having a predetermined light shielding pattern. As shown in FIG. 5C, the upper surface photomask (PM-A) that performs pattern exposure on the upper surface photoresist film (13A) of the transparent substrate (11) has an upper surface electrode pattern (12A ′ ) Corresponding to the formation of the upper surface light-transmitting portion (5A) is provided, and the other portion is provided with the upper surface light-shielding portion (4A). This upper surface photomask (PM-A) is the same as the photomask shown in FIG.

  Further, the lower surface photomask (PM-B) that performs pattern exposure on the lower surface photoresist film (13B) of the transparent substrate (11) has a lower surface transparent pattern corresponding to the formation of the lower surface electrode pattern (12B ′) shown in FIG. The light part (5B) is provided, and the lower surface light-shielding part (4B) is provided in the other part. This lower surface photomask (PM-B) is the same as the photomask shown in FIG.

  The upper surface photomask (PM-A) and the lower surface photomask (PM-B) are formed so that the upper surface electrode pattern (12A ′) and the lower surface electrode pattern (12B ′) illustrated in FIG. Using the alignment mark provided on each photomask and the alignment mark previously provided on the transparent substrate, alignment is performed at the stage of this pattern exposure.

  The portion corresponding to the formation of the upper surface electrode pattern (12A ′) of the upper surface photoresist film (13A) by the upper surface pattern exposure (LA) through the upper surface photomask (PM-A) (in FIG. 5C) , X) represents the exposed and hardened top photoresist film (13A ′). Under the present circumstances, the exposure light which permeate | transmitted the upper surface translucent part (5A) by upper surface pattern exposure (LA) is an upper surface transparent conductive film (12A), a transparent base material (11), and a lower surface transparent conductive film (12B). After the upper surface photoresist film (13A ′) is cured, the portion of the lower surface electrode pattern (12B ′) represented by the symbol (b) is reached as shown by the dotted arrow, and this portion is Expose and cure.

On the other hand, the portion corresponding to the formation of the lower surface electrode pattern (12B ′) of the lower surface photoresist film (13B) by the lower surface pattern exposure (LB) through the lower surface photomask (PM-B) (FIG. 5). In (c), the underside photoresist film (13B ′) is exposed and cured.
Under the present circumstances, the exposure light which permeate | transmitted the other surface translucent part (5B) by the lower surface pattern exposure (LB) is a lower surface transparent conductive film (12B), a transparent base material (11), and an upper surface transparent conductive film (12A). ) Is transparent, after curing the lower surface photoresist film (13B ′),
The upper photoresist film (13A ′) also reaches the portion indicated by reference numeral (a), and this portion is exposed and cured.

  That is, in the upper surface pattern exposure (LA) from above, both the upper surface photoresist film (13A) and the lower surface photoresist film (13B) are exposed, and the lower surface pattern exposure (L) from below. -B) exposes both the lower photoresist film (13B) and the upper photoresist film (13A).

  Therefore, as shown in FIG. 6A, after pattern exposure, when development and hardening treatment with a predetermined chemical solution are performed, a desired hardened upper resist film (16A) is formed on the upper surface of the transparent substrate (11). In addition to the above, a cured resist film of the upper surface photoresist film represented by reference numeral (a ′) is formed. Further, on the lower surface of the transparent substrate (11), in addition to the desired cured lower resist film (16B), a cured resist film represented by reference numeral (b ') is formed.

  FIG. 6B shows a stage where etching and film removal processing are performed after the development and the film hardening processing shown in FIG. As shown in FIG. 6B, a desired upper surface electrode pattern (12A ′) and an undesired upper surface electrode pattern (12A ″) are formed on the upper surface of the transparent substrate (11). A desired lower surface electrode pattern (12B ′) and an undesired lower surface electrode pattern (12B ″) are formed on the lower surface of the material (11).

  As described above, when the photoresist film on the transparent conductive film on both sides of the transparent substrate is simultaneously subjected to pattern exposure to provide a resist pattern, and then etched and stripped, it is obtained on the transparent substrate (11). As for the electrode pattern, a desired upper surface electrode pattern and an undesired upper surface electrode pattern are formed on the upper surface of the transparent substrate (11), and a desired lower surface electrode pattern and desired surface are formed on the lower surface of the transparent substrate (11). There is a problem that a lower surface electrode pattern is not formed.

  As a method for avoiding such a problem, for example, first, the upper electrode pattern (12A ′) is formed on the upper surface of the transparent substrate (11), and then the lower electrode pattern (12B) is formed on the lower surface of the transparent substrate (11). '), That is, a method of forming electrode patterns on both sides of the transparent substrate (11) in two steps for each side.

  However, the method of forming the electrode pattern for each one side is that the positional accuracy of the upper surface electrode pattern (12A ′) and the lower surface electrode pattern (12B ′) is deteriorated, the efficiency of forming the electrode pattern is reduced, After forming the electrode pattern on one side, it is necessary to provide a protective film so that the etching on forming the electrode pattern on the other side does not dissolve the electrode pattern formed on the other side.

For this reason, various studies for forming patterns on both surfaces of a transparent substrate have been made. For example, in Patent Document 1, as a method for forming a pattern by photolithography on both surfaces of a transparent substrate, (a) a photo that is exposed to light having a _first wavelength λ ₁ on the first surface of the transparent substrate. Applying a resist; (b) applying another photoresist sensitive to light having a _second wavelength λ ₂ different from the first wavelength on the second surface of the transparent substrate; c) a method is proposed that includes the step of exposing the first surface with light having a _first wavelength λ ₁ and the step of (d) exposing the second surface with light having a _second wavelength λ _2. ing.
This proposed method can be said to avoid the above-mentioned problem. However, there remain problems that the positional accuracy of the upper surface pattern and the lower surface pattern is deteriorated and the efficiency is lowered.

  Patent Document 2 proposes a method for satisfactorily forming the upper surface pattern and the lower surface pattern on both surfaces of a transparent substrate. This proposed method is good in the positional accuracy of the upper surface pattern and the lower surface pattern, but is not an efficient method.

JP 2002-14464 A Japanese Patent Laid-Open No. 9-43860

  The present invention has been made in order to solve the above-mentioned problems. On the transparent metal film on both surfaces of the transparent substrate, for example, on the photoresist film provided on the transparent conductive film, different pattern exposures are performed on both surfaces simultaneously. It is possible to form a top resist pattern on the top transparent conductive film and a bottom resist pattern on the bottom transparent conductive film, so that both sides of the transparent substrate after etching and peeling treatment can be formed. It is an object of the present invention to provide a patterning method on both surfaces of a transparent substrate, which can efficiently and easily form a transparent conductive film pattern with good positional accuracy.

  In the pattern formation of the transparent metal film provided on the front and back surfaces of the transparent substrate, the present invention forms an opaque layer that shields exposure light on at least one transparent metal film of the transparent metal film, A pattern forming method on both surfaces of a transparent substrate, wherein a photoresist film is formed by applying a photoresist to both front and back surfaces of the substrate.

  The present invention is also the pattern forming method on both sides of the transparent substrate, wherein the transparent metal film is a transparent conductive film.

  Further, the present invention provides the pattern forming method on both sides of the transparent substrate according to the above invention, wherein the opaque layer is a material that is dissolved and removed by etching and film removal treatment. This is a pattern forming method.

  The present invention forms an opaque layer that shields exposure light on at least one transparent metal film of the transparent metal film before applying the photoresist to form the photoresist film. Even if the photoresist film provided on the metal film, for example, on the transparent conductive film is simultaneously subjected to different pattern exposure on both surfaces, the upper resist pattern is formed on the upper transparent conductive film, and the upper transparent conductive film is formed on the lower transparent conductive film. Can form a resist pattern on the bottom surface. Therefore, it is possible to efficiently and easily form a transparent conductive film pattern with good positional accuracy on both surfaces of the transparent substrate after etching and peeling treatment. Pattern forming method.

  In addition, the present invention provides a transparent conductive film on both sides of a transparent substrate suitable for forming a transparent conductive film frequently used for a transparent electrode of a flat display as a pattern on both sides of a transparent base by using a transparent metal film as a transparent conductive film. This is a pattern forming method.

  Moreover, since the present invention is a material in which the opaque layer is dissolved and removed by etching and film removal treatment, when the transparent metal film provided on both the front and back surfaces of the transparent substrate is formed into a pattern by a photoetching method. It becomes a suitable pattern forming method on both sides of a transparent substrate.

It is a fragmentary sectional view in an example of a double-sided printed wiring board. It is explanatory drawing which shows an example of the method of manufacturing a double-sided printed wiring board by the photo-etching method in the order of a process in a cross section. It is explanatory drawing which shows an example of the method of manufacturing a double-sided printed wiring board by the photo-etching method in the order of a process in a cross section. It is a fragmentary sectional view in an example of a transparent electrode formed on a transparent substrate. It is explanatory drawing which shows an example of the trial which manufactures a transparent substrate in a cross section in process order. It is explanatory drawing which shows an example of the trial which manufactures a transparent substrate in a cross section in process order. It is a fragmentary sectional view in an example which formed the transparent conductive film on both sides of a transparent substrate in the pattern using the patterning method of the present invention. It is explanatory drawing which shows an example which manufactures the upper surface electrode pattern and lower surface electrode pattern on a transparent base material with the patterning method by this invention in a process order at a cross section. It is explanatory drawing which shows an example which manufactures the upper surface electrode pattern and lower surface electrode pattern on a transparent base material with the patterning method by this invention in a process order at a cross section.

Below, the patterning method to the transparent base material both surfaces by this invention is demonstrated based on embodiment.
FIG. 7 is a partial cross-sectional view of an example in which a transparent conductive film on both surfaces of a transparent substrate is formed in a pattern using the patterning method according to the present invention. As shown in FIG. 7, the upper electrode pattern (22A ′) is formed on the upper surface of the transparent substrate (21), and the lower electrode pattern (22B ′) is formed on the lower surface.

This transparent substrate uses, for example, a plastic film as a transparent substrate (21) such as a transparent touch panel, or a transparent glass plate as a transparent substrate (21) as in a multilayer liquid crystal display device. The upper electrode pattern (22A ′) on the upper surface and the lower electrode pattern (22B ′) on the lower surface of the transparent base material (21) are formed by forming a transparent conductive film as a transparent metal film into an electrode pattern. It is.
In FIG. 7, the pattern shape formed on both surfaces of the transparent substrate (21) is the same as the pattern shown in FIG.

As a material for the transparent conductive film as the transparent metal film, a metal such as Au, Ag, or Cu, or a metal oxide such as In ₂ O ₃ , SnO ₂ , or ITO (Indium Tin Oxide) is formed into a thin film and used. ITO or SnO ₂ is widely used as a transparent electrode for flat displays and solar power.

8 and 9 are explanatory views showing in cross-section an example of manufacturing the upper surface electrode pattern (22A ′) and the lower surface electrode pattern (22B ′) on the transparent substrate shown in FIG. 7 by the patterning method according to the present invention. It is.
In FIG. 8A, transparent conductive films (22A, 22B) are formed on the upper and lower surfaces of a transparent substrate (21), which is transparent to transmit exposure light.

  In the present invention, before forming a photoresist film by applying a photoresist to the transparent conductive films (22A, 22B) on both sides of the transparent substrate (21), as shown in FIG. On at least one transparent conductive film (22A, 22B) on both sides, an opaque layer (27) that blocks exposure light is formed on the upper transparent conductive film (22A) in FIG. 8B. Subsequently, a photoresist is applied on the opaque layer (27) and the lower transparent conductive film (22B) and dried to form an upper photoresist film (23A) and a lower photoresist film (23B). In this example, a negative photoresist is used as the photoresist.

For the opaque layer (27) in the present invention, a material that is dissolved and removed by etching and stripping is used. For example, when an acid solution is used for the etching treatment and an alkali solution is used for the film removal treatment, for example, Al that is dissolved by acid and alkali can be used as the material of the opaque layer (27). In addition to Al, Zn and Sn, which are amphoteric metals, can be mentioned, and each simple substance, oxide and hydroxide are dissolved and removed by acid and alkali.
In addition to metals, resists soluble in acid and alkali can be used as the opaque layer. The thickness of these opaque layers is preferably 1 μm or less.

  Next, pattern exposure is performed on the upper surface photoresist film (23A) and the lower surface photoresist film (23B) on both surfaces of the transparent substrate (21) through a photomask having a predetermined light shielding pattern. As shown in FIG. 8C, the upper surface photomask (PM-A) that performs pattern exposure on the upper surface photoresist film (23A) of the transparent substrate (21) has an upper surface electrode pattern (22A ′ shown in FIG. 7). ) Corresponding to the formation of the upper surface light-transmitting portion (5A) is provided, and the other portion is provided with the upper surface light-shielding portion (4A). This upper surface photomask (PM-A) is the same as the photomask shown in FIG.

  Further, the lower surface photomask (PM-B) that performs pattern exposure on the lower surface photoresist film (23B) of the transparent substrate (21) has a lower surface transparent pattern corresponding to the formation of the lower surface electrode pattern (22B ′) shown in FIG. The light part (5B) is provided, and the lower surface light-shielding part (4B) is provided in the other part. This lower surface photomask (PM-B) is the same as the photomask shown in FIG.

  The upper surface photomask (PM-A) and the lower surface photomask (PM-B) are formed so that the upper surface electrode pattern (22A ′) and the lower surface electrode pattern (22B ′) illustrated in FIG. Using the alignment mark provided on each photomask and the alignment mark previously provided on the transparent substrate, alignment is performed at the stage of this pattern exposure.

The portion corresponding to the formation of the upper surface electrode pattern (22A ′) of the upper surface photoresist film (23A) by the upper surface pattern exposure (LA) through the upper surface photomask (PM-A) (in FIG. 8C). , Represented by x) is the exposed and hardened top photoresist film (23A ′). At this time, the exposure light transmitted through the upper surface light transmitting portion (5A) by the upper surface pattern exposure (LA) is shielded by the opaque layer (27).
That is, even if the upper transparent conductive film (22A), the transparent substrate (21), and the lower transparent conductive film (22B) are transparent, the exposure light is applied to the lower surface after the upper photoresist film (23A ′) is cured. The photoresist film (23B) is not reached.

On the other hand, the portion corresponding to the formation of the lower surface electrode pattern (22B ′) of the lower surface photoresist film (23B) by the lower surface pattern exposure (LB) through the lower surface photomask (PM-B) (FIG. 8). In (c), the underside photoresist film (23B ′) is exposed and cured.
Under the present circumstances, the exposure light which permeate | transmitted the lower surface transparent part (5B) by the lower surface pattern exposure (LB) is a lower surface transparent conductive film (22B), a transparent base material (21), and an upper surface transparent conductive film (22A). Is transparent, it reaches the upper transparent conductive film (22A) as shown by the dotted arrow after curing the lower photoresist film (23B ′), but is shielded by the opaque layer (27). The exposure light does not reach the upper surface photoresist film (23A).

That is, the upper surface pattern exposure (LA) from above gives exposure light only to the upper surface photoresist film (23A), and the lower surface pattern exposure (LB) from below is the lower surface photoresist film (23B). ) Is given exposure light only.
Therefore, as shown in FIG. 9A, after pattern exposure, when development and hardening treatment with a predetermined chemical solution are performed, a desired hardened upper resist film (26A) is formed on the upper surface of the transparent substrate (21). Is formed. Further, a desired hardened lower resist film (26B) is formed on the lower surface of the transparent substrate (21).

  FIG. 9B shows the stage where the etching process (EA, EB) is performed after the development and the hardening process shown in FIG. As shown in FIG. 9B, on the upper surface of the transparent substrate (21), the opaque layer (27) portion and the upper transparent conductive film (22A) portion that are not protected by the upper resist film (26A) are dissolved and removed. The In addition, on the lower surface of the transparent substrate (21), the lower transparent conductive film (22B) portion that is not protected by the lower resist film (26B) is dissolved and removed.

  FIG. 9C shows a stage where a film removal process is performed after etching. As shown in FIG. 9C, a desired upper surface electrode pattern (22A ′) is formed on the upper surface of the transparent substrate (21), and a desired lower surface is formed on the lower surface of the transparent substrate (21). An electrode pattern (22B ′) is formed.

  As described above, the patterning method on both surfaces of the transparent substrate of the present invention is to expose a transparent metal, for example, at least one transparent conductive film of a transparent conductive film before applying a photoresist to form a photoresist film. Since an opaque layer that blocks light is formed, even if different pattern exposure is performed on both sides of the photoresist film provided on the transparent conductive film, the top resist pattern is formed on the top transparent conductive film, and the bottom surface A lower resist pattern can be formed on the transparent conductive film, and therefore, a transparent conductive film pattern with good positional accuracy can be efficiently and simply formed on both surfaces of the transparent substrate after etching and peeling treatment. .

DESCRIPTION OF SYMBOLS 1 ... Base material 2A '... Upper surface conductor wiring 2B' ... Lower surface conductor wiring 2A, 2B ... Upper surface copper foil, Lower surface copper foil 3A, 3B ... Upper surface photoresist film, Lower surface photoresist film 3A ', 3B' ... hardened upper surface photoresist film, lower surface hardened photoresist film 4A, 4B ... upper surface light shielding part, lower surface light shielding part 5A, 5B ... upper surface light transmitting part, lower surface light transmitting part 6A , 6B ... upper resist film, lower resist film 11, 21 ... transparent substrate 12A, 12B ... upper transparent conductive film, lower transparent conductive film 12A ', 12B' ... upper electrode pattern, lower electrode Patterns 12A ″, 12B ″... Undesired upper surface electrode pattern, undesired lower surface electrode patterns 13A, 13B... Upper surface photoresist film, lower surface photoresist films 13A ′, 13B ′. film, Lower photoresist films 16A, 16B ... upper resist film, lower resist films 22A ', 22B' ... upper electrode pattern, lower electrode patterns 22A, 22B ... upper transparent conductive film, lower transparent conductive film 23A , 23B... Upper surface photoresist film, lower surface photoresist film 23A ′, 23B ′... Cured upper surface photoresist film, cured lower surface photoresist film 26A, 26B. .. Opaque layers EA, EB in the present invention Etching process on upper surface, Etching process on lower surface LA, LB ... Upper surface pattern exposure, Lower surface pattern exposure PM-A, PM -B ... Upper surface photomask, Lower surface photomask a, b ... Lower surface portion exposed by upper surface pattern exposure, Exposed by lower surface pattern exposure That the upper surface portion a ', b' ··· hardened resist film is formed on the upper surface, the cured resist film is formed on the lower surface

Claims (3)

  In the pattern formation of the transparent metal film provided on both the front and back surfaces of the transparent substrate, an opaque layer that blocks exposure light is formed on at least one transparent metal film of the transparent metal film, and on both the front and back surfaces of the transparent substrate. A pattern forming method on both surfaces of a transparent substrate, wherein a photoresist film is formed by applying a photoresist.   The method for forming a pattern on both surfaces of a transparent substrate according to claim 1, wherein the transparent metal film is a transparent conductive film.   The method for forming a pattern on both surfaces of a transparent substrate according to claim 1 or 2, wherein the opaque layer is a material that is dissolved and removed by etching and stripping treatment.

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