[go: up one dir, main page]

CN102082563A - IGBT (insulated gate bipolar transistor) driver, signal processing method, motor control system and vehicle - Google Patents

IGBT (insulated gate bipolar transistor) driver, signal processing method, motor control system and vehicle Download PDF

Info

Publication number
CN102082563A
CN102082563A CN2009101885463A CN200910188546A CN102082563A CN 102082563 A CN102082563 A CN 102082563A CN 2009101885463 A CN2009101885463 A CN 2009101885463A CN 200910188546 A CN200910188546 A CN 200910188546A CN 102082563 A CN102082563 A CN 102082563A
Authority
CN
China
Prior art keywords
igbt
circuit
output
drive signal
driver
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CN2009101885463A
Other languages
Chinese (zh)
Other versions
CN102082563B (en
Inventor
杨广明
卢文
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
BYD Co Ltd
Original Assignee
BYD Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by BYD Co Ltd filed Critical BYD Co Ltd
Priority to CN 200910188546 priority Critical patent/CN102082563B/en
Publication of CN102082563A publication Critical patent/CN102082563A/en
Application granted granted Critical
Publication of CN102082563B publication Critical patent/CN102082563B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Landscapes

  • Inverter Devices (AREA)
  • Power Conversion In General (AREA)

Abstract

The invention discloses an IGBT (insulated gate bipolar transistor) driver, a signal processing method, a motor control system and a vehicle. The IGBT driver comprises an IGBT driving signal input circuit, a driving signal isolating circuit and a multi-IGBT output circuit which are connected in sequence, wherein the IGBT driving signals generated by the IGBT driving signal input circuit are added to the multi-IGBT output circuit via the driving signal isolating circuit so as to drive each IGBT in the multi-IGBT output circuit to output signals. The IGBT driver also comprises a power source isolating circuit, wherein the power source isolating circuit comprises isolated output circuits individually corresponding to the IGBTs and a common output circuit corresponding to the whole of multiple IGBTs. The invention has the beneficial effects of achieving whole drive of multiple IGBTs and reducing the PCB area of the drive and protection circuit.

Description

IGBT driver, signal processing method, electric machine control system, vehicle
Technical field
The present invention relates to IGBT and drive, specifically, relate to a kind of IGBT driver, signal processing method, electric machine control system, vehicle.
Background technology
The function of IGBT (Insulated Gate Bipolar Transistor, igbt) drive circuit is that the switching signal that will come from microcontroller converts the drive signal with enough power to, guarantees that IGBT opens reliably and turn-offs.Simultaneously, the IGBT drive circuit is also isolated for the voltage between microcontroller and the power transistor provides secured electrical.In addition, obtain when making IGBT overcurrent or short trouble occur correct and effectively protection, defencive function generally also is integrated in the drive circuit.Therefore, the performance of IGBT driver is directly connected to the reliability of whole inversion system.Concrete performance is mainly reflected in following several respects: because the input of IGBT grid has capacitance characteristic, have switching speed faster in order to make IGBT, driver must be able to provide instantaneous big drive current, thereby reduces switching loss; Requirement provides perfect overload and short-circuit protection function for IGBT; Because driver is between control circuit and high-voltage power circuit, also require driver that higher insulation voltage tolerance and higher common-mode rejection ratio are provided.
At present, the drive circuit of IGBT is many, the drive products of various maturations is quite a few on the market, mainly comprise: the driver that 1) adopts high speed photo coupling, the common feature of this quasi-driver circuit is the optocoupler that adopts high speed, high cmrr, high-isolating, but owing to need external insulating power supply, circuit is realized more complicated.2) adopt pulse transformer to realize isolating, the problem that the method exists cost and physical size to increase; 3) adopt the mode of high-frequency impulse modulation, be with the high-frequency pulse signal that is higher than tens times of PWM (Pulse WidthModulation, pulse-width modulation) signals as carrier wave, control signal is modulated.The cost of this kind method is than higher, and the circuit relative complex is used not general.
In Chinese patent application " processing method of IGBT driver and drive signal thereof) " (Chinese patent application number: 200610037366.1), a kind of IGBT driver is disclosed, this driver comprise be used for input signal be transformed into square wave waveform shaping circuit, be used for signal is finished CPLD logic controller, the pulse modulation amplifying circuit that is used to convert to the spike signal that complex logic handles, is used for signal is coupled to secondary isolating transformer, is used to be reduced into the pulse demodulation circuit and the output amplifier of pwm pulse signal.When drive signal is handled, the pwm signal of input is at first through waveform shaping circuit, become the precipitous square wave in edge, square-wave signal input CPLD logic controller, finish signal is realized logical process, the pulse control signal of output enters modulation amplifying circuit, produces the spike signal and is coupled to secondary through isolating transformer, be reduced into pwm pulse signal by demodulator circuit again, drive IGBT by output amplifier then.It is the input signal treatment circuit of core that this invention is adopted with CPLD, overcomes by the separation logic device and constitutes too complicated problems of treatment circuit.
Yet, the circuit of above-mentioned driver improves the improvement that only relates to the monomer driver, and at present in a lot of application scenarios, use when all relating to a plurality of IGBT, as shown in Figure 1, use in the time of existing a plurality of IGBT, generally all be to select above certain mode to carry out monomer to drive, for example in circuit shown in Figure 1, each phase for three-phase bridge circuit, all be provided with separately the power isolation circuit and the Fault Isolation circuit of bridge signal up and down, the PWM input signal that front end then is provided with is separately handled, fault processing unit and the unit that the DC/DC conversion is carried out in input to power supply.That is to say that a plurality of IGBT of prior art use simultaneously, be actually a plurality of IGBT and realize that separately monomer drives.
Summary of the invention
In view of this, the invention provides a kind of IGBT driver, signal processing method, electric machine control system, vehicle, can realize that the integral body of many IGBT drives.
For solving the problems of the technologies described above, the present invention has adopted following technical scheme:
A kind of IGBT driver comprises the IGBT drive signal input circuit, drive signal buffer circuit, the many IGBT output circuit that connect successively; The IGBT drive signal that described IGBT drive signal input circuit produces is added on the described IGBT output circuit through described drive signal buffer circuit, carries out signal output with each IGBT that drives in many IGBT output circuit; Also comprise power isolation circuit, described power isolation circuit comprise with the separately corresponding isolation output road of described each IGBT and with the corresponding public output road of a plurality of IGBT integral body.
In a kind of embodiment of above-mentioned driver, described many IGBT output circuit is 3 phase bridge circuits, described power isolation circuit comprise with 3 mutually bridge circuit 3 go up separately corresponding 3 tunnel isolating the output roads and descend 1 tunnel corresponding public output road of bridge integral body mutually of bridge mutually with 3 of 3 phase bridge circuits.
In a kind of embodiment of above-mentioned driver, each the output road, road in the described power isolation circuit comprises transformer secondary, rectifier diode, voltage-stabiliser tube, first electrochemical capacitor, second electrochemical capacitor, inductance, first electric capacity, second electric capacity, positive voltage output end, negative voltage output and ground; One end of described transformer secondary connects the positive pole of described rectifier diode, the other end connects described negative voltage output, the negative pole of described rectifier diode, one end of described inductance, the positive pole of described first electrochemical capacitor links together, the other end of described inductance, the positive pole of described second electrochemical capacitor, described positive voltage output end links together, described first electric capacity, second capacitances in series together, both interconnective end ground connection, the other end of described first electric capacity connects described positive voltage output end, the other end of described second electric capacity connects described negative voltage output, the negative pole of described voltage-stabiliser tube connects described first electric capacity, the connection intersection point of second electric capacity, the negative pole of described first electrochemical capacitor, the negative pole of described second electrochemical capacitor, the positive pole of described voltage-stabiliser tube is connected described negative voltage output.
In a kind of embodiment of above-mentioned driver, described IGBT drive signal input circuit is a pwm signal generation circuit.
The present invention also provides the drive signal processing method of above-mentioned IGBT driver, comprising:
Many IGBT output circuit is to described IGBT drive signal input circuit feedback fault detect result;
When described IGBT drive signal input circuit has fault-signal in arbitrary IGBT feedback, close drive signal, so that whole IGBT stop signal outputs of many IGBT output circuit.
The present invention also provides a kind of electric machine control system that comprises above-mentioned IGBT driver.
The present invention provides a kind of vehicle of using above-mentioned electric machine control system simultaneously.
Described vehicle can be electric automobile or hybrid vehicle.
The present invention adopts that IGBT is whole to be driven, thereby can reduce circuit devcie, makes that circuit is simple, cost reduces, and the PCB area of driver also thereby can reduce has also increased the security reliability of driver simultaneously.
Description of drawings
Fig. 1 is the structural representation that IGBT monomer of the prior art drives;
Fig. 2 is the whole structural representation that drives of the IGBT of the embodiment of the invention;
Fig. 3 is the structural representation of the whole power supply of IGBT of the embodiment of the invention;
Fig. 4 is the circuit structure diagram of the whole power supply of IGBT of embodiments of the invention.
Embodiment
In conjunction with the accompanying drawings the present invention is described in further detail below by embodiment.
Referring to Fig. 2, it is the IGBT driver of example with the three-phase bridge circuit that Fig. 2 has described a kind of, and this IGBT driver comprises the IGBT drive signal input circuit, drive signal buffer circuit, the many IGBT output circuit that connect successively; The IGBT drive signal that IGBT drive signal input circuit produces is added on the described IGBT output circuit through described drive signal buffer circuit, carries out signal output with each IGBT that drives in many IGBT output circuit.
Wherein, many IGBT output circuit is to be example with the three-phase bridge circuit, and the Shang Qiao and the Xia Qiao of the A in the three-phase bridge circuit, B, C three-phase have separately output signal treatment channel, power module and fault detection unit.
In the prime of three-phase bridge circuit, be the buffer circuit of IGBT, except above-mentioned drive signal buffer circuit, also comprise power isolation circuit and Fault Isolation circuit in the buffer circuit.In this circuit, the isolated from power unification is carried out, and then still each phase Shang Qiao of corresponding three-phase bridge and following bridge carry out respectively for signal and Fault Isolation.When system's operate as normal, power module is unified provides power supply for the circuit after isolating, and signal still transfers to secondary through different channel isolations and handles.
As shown in Figure 3, power isolation circuit adopts four road isolating switch powers in this example, wherein three-way power is respectively applied for the last bridge of A, B, C phase, be referred to as and isolate the output road, to go up bridge IGBT separately mutually corresponding separately with A, B, C for it, another road power supply is used for the following bridge of A, B, C phase, is referred to as public output road, and it is whole corresponding with A, B, C following bridge mutually.Guaranteed each isolation of power supply between the bridge up and down mutually like this, also guaranteed the isolation of low-pressure section (input signal processing), can also save the port number of insulating power supply simultaneously with high-pressure section (drive signal processing).
As shown in Figure 4, power isolation circuit comprises: drive signal is input to the grid of metal-oxide-semiconductor Q1, metal-oxide-semiconductor Q1 conducting, then form voltage, and be coupled to four transformer secondary outputs respectively, in this No. four transformers secondary output on the former limit of transformer T1, UT, VT, WT three tunnel are output as and isolate the output road, corresponding separately with bridge IGBT separately on A, B, the C three-phase, the CT road is output as public output road, and is whole corresponding with bridge under A, B, the C three-phase.Because four road secondary output circuit forms are identical, therefore, only are output as example with the UT road and are described.In the UT road, transformer secondary two ends, one end connects the positive pole of rectifier diode D1, the output of other end connection-8v voltage, the negative pole of rectifier diode D1, one end of inductance L 1, the positive pole of the first electrochemical capacitor CE1 links together, the other end of inductance L 1, the positive pole of the first electrochemical capacitor CE2, the output of+15v voltage links together, first capacitor C 1, second capacitor C 2 is cascaded, both interconnective ends are ground, the output of the other end connection+15v voltage of first capacitor C 1, the output of the other end connection-8v voltage of second capacitor C 2, the negative pole of voltage-stabiliser tube D5 connects capacitor C 1, the connection intersection point of C2, the negative pole of the first electrochemical capacitor CE1, the negative pole of the second electrochemical capacitor CE2, the positive pole of voltage-stabiliser tube D5 all is connected-output of 8v voltage.
The voltage of transformer secondary output, rectification through rectifier diode D1, the LC filter circuit filtering of inductance L 1, the first electrochemical capacitor CE1, the second electrolysis CE2 is after voltage stabilizing and the filtering of voltage-stabiliser tube D5 and filter capacitor C1, C2 obtain supplying with the output generating positive and negative voltage that A goes up bridge IGBT pipe mutually.
Similarly, in the VT road, comprise rectifier diode D2, inductance L 2, electrochemical capacitor CE3, CE4, voltage-stabiliser tube D6, capacitor C 3, C4; In the WT road, comprise rectifier diode D3, inductance L 3, electrochemical capacitor CE5, CE6, voltage-stabiliser tube D7, capacitor C 5, C6; In the CT road, comprise rectifier diode D4, inductance L 4, electrochemical capacitor CE7, CE8, voltage-stabiliser tube D8, capacitor C 7, C8.Three's circuit connecting relation is identical with the UT road, repeats no more.
The buffer circuit prime is that input signal is handled, and fault processing unit is used for producing the drive signal of IGBT and carries out troubleshooting.In the example of Fig. 2, the IGBT drive signal is the PWM input signal.PWM input signal processing unit for example can comprise PWM waveform input shaper circuit, CPLD logic controller, power module, signal processing module, PWM waveform output Shaping and hardware protection circuit.During work, the outside feeds and drives required pwm signal, after the processing of waveform input shaper circuit and multiple signals logic controller, outputs to PWM waveform output Shaping and protective circuit part through the pulse transformer again, drives IGBT then.The driving power that turn on and off this moment is by the power module supply.Certainly, input signal is handled and can be adopted other forms of treatment circuit equally.
The drive signal of above-mentioned driver is handled, comprise that A, B, C three-phase are up and down after the bridge interlocking separately (interlocking between the drive signal of bridge up and down of A phase, interlocking between the drive signal of bridge up and down of B phase, interlocking between the drive signal of bridge up and down of C phase), increase Dead Time, and then output drive signal.Each phase fault testing result of three-phase circuit all feeds back to the pwm signal input, and any one the tunnel has the input of fault-signal feedback, and the fault processing unit of pwm signal all will be closed the drive signal of A, B, C three tunnel, reach the purpose of timely hardware protection.Thereby avoid the hardware protection signal of the IGBT driver of monomer driving can only close one the tunnel fast, the problem that all the other two-way can't in time be protected.This drive signal processing mode can reduce the damage probability of switching devices such as IGBT, has improved the reliability of hardware protection.
The IGBT driver of the embodiment of the invention, owing to realized the unification of power module, its circuit is succinct more, encapsulation is littler, the PCB layout area of whole drive circuit is also reduced.When a plurality of IGBT drive work simultaneously; the uniformity of power module improves the shutoff voltage stability opened of IGBT, the stabilizing power when having improved a plurality of IGBT work, and also improved trouble diagnosibility; strengthen protective capability, thereby also can reduce the PCB area of Drive Protecting Circuit.
IGBT driver of the present invention and drive signal processing method are applicable to the general industry application scenario, and for example electric machine control system especially at vehicle, for example in the electric machine control system of electric automobile or hybrid vehicle, can well be used.
Above content be in conjunction with concrete execution mode to further describing that the present invention did, can not assert that concrete enforcement of the present invention is confined to these explanations.For the general technical staff of the technical field of the invention, without departing from the inventive concept of the premise, can also make some simple deduction or replace, all should be considered as belonging to protection scope of the present invention.

Claims (8)

1. an IGBT driver is characterized in that, comprises the IGBT drive signal input circuit, drive signal buffer circuit, the many IGBT output circuit that connect successively; The IGBT drive signal that described IGBT drive signal input circuit produces is added on the described IGBT output circuit through described drive signal buffer circuit, carries out signal output with each IGBT that drives in many IGBT output circuit; Also comprise power isolation circuit, described power isolation circuit comprise with the separately corresponding isolation output road of described each IGBT and with the corresponding public output road of a plurality of IGBT integral body.
2. IGBT driver as claimed in claim 1, it is characterized in that, described many IGBT output circuit is 3 phase bridge circuits, described power isolation circuit comprise with 3 mutually bridge circuit 3 go up separately corresponding 3 tunnel isolating the output roads and descend 1 tunnel corresponding public output road of bridge integral body mutually of bridge mutually with 3 of 3 phase bridge circuits.
3. IGBT driver as claimed in claim 2, it is characterized in that each the output road, road in the described power isolation circuit comprises transformer secondary, rectifier diode, voltage-stabiliser tube, first electrochemical capacitor, second electrochemical capacitor, inductance, first electric capacity, second electric capacity, positive voltage output end, negative voltage output and ground; One end of described transformer secondary connects the positive pole of described rectifier diode, the other end connects described negative voltage output, the negative pole of described rectifier diode, one end of described inductance, the positive pole of described first electrochemical capacitor links together, the other end of described inductance, the positive pole of described second electrochemical capacitor, described positive voltage output end links together, described first electric capacity, second capacitances in series together, both interconnective end ground connection, the other end of described first electric capacity connects described positive voltage output end, the other end of described second electric capacity connects described negative voltage output, the negative pole of described voltage-stabiliser tube connects described first electric capacity, the connection intersection point of second electric capacity, the negative pole of described first electrochemical capacitor, the negative pole of described second electrochemical capacitor, the positive pole of described voltage-stabiliser tube is connected described negative voltage output.
4. IGBT driver as claimed in claim 1 is characterized in that, described IGBT drive signal input circuit is a pwm signal generation circuit.
5. the drive signal processing method as the arbitrary described IGBT driver of claim 1-4 is characterized in that, comprising:
Many IGBT output circuit is to described IGBT drive signal input circuit feedback fault detect result;
When described IGBT drive signal input circuit has fault-signal in arbitrary IGBT feedback, close drive signal, so that whole IGBT stop signal outputs of many IGBT output circuit.
6. electric machine control system that comprises as the arbitrary described IGBT driver of claim 1-4.
7. vehicle of using electric machine control system as claimed in claim 6.
8. vehicle as claimed in claim 7 is characterized in that, described vehicle is electric automobile or hybrid vehicle.
CN 200910188546 2009-12-01 2009-12-01 IGBT (insulated gate bipolar transistor) driver, signal processing method, motor control system and vehicle Active CN102082563B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN 200910188546 CN102082563B (en) 2009-12-01 2009-12-01 IGBT (insulated gate bipolar transistor) driver, signal processing method, motor control system and vehicle

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN 200910188546 CN102082563B (en) 2009-12-01 2009-12-01 IGBT (insulated gate bipolar transistor) driver, signal processing method, motor control system and vehicle

Publications (2)

Publication Number Publication Date
CN102082563A true CN102082563A (en) 2011-06-01
CN102082563B CN102082563B (en) 2013-05-29

Family

ID=44088330

Family Applications (1)

Application Number Title Priority Date Filing Date
CN 200910188546 Active CN102082563B (en) 2009-12-01 2009-12-01 IGBT (insulated gate bipolar transistor) driver, signal processing method, motor control system and vehicle

Country Status (1)

Country Link
CN (1) CN102082563B (en)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103124133A (en) * 2012-12-22 2013-05-29 中国船舶重工集团公司第七0九研究所 8-unit IGBT (insulated gate bipolar transistor) driver and method for realizing isolation drive and protection of driver
CN103475190A (en) * 2013-09-03 2013-12-25 山东润峰电子科技有限公司 Efficient power supply control and drive circuit for electromobile motor
CN106033885A (en) * 2015-03-20 2016-10-19 神华集团有限责任公司 DC Microgrid Power Distribution System
US9577569B2 (en) 2013-07-09 2017-02-21 Byd Company Limited Motor control system of electric vehicle and controlling method for motor control system of electric vehicle and electric vehicle
CN107834823A (en) * 2017-11-09 2018-03-23 天津英捷利汽车技术有限责任公司 A kind of three-phase metal-oxide-semiconductor driving power for electric motor car AC machine controller
CN108566186A (en) * 2018-01-15 2018-09-21 上海力信电气技术有限公司 A kind of expansion door driving voltage holding circuit
CN112187220A (en) * 2020-11-27 2021-01-05 杭州飞仕得科技有限公司 Semiconductor drive circuit
CN113794410A (en) * 2021-09-10 2021-12-14 福州大学 Signal and power isolation system based on ARM intensive multi-path stepping motor control system

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11178356A (en) * 1997-12-11 1999-07-02 Hitachi Ltd Control device for electric vehicle
CN1917369A (en) * 2006-08-30 2007-02-21 广州金升阳科技有限公司 IGBT drive, and process method for driving signal
CN201266914Y (en) * 2008-08-22 2009-07-01 比亚迪股份有限公司 Driver circuit of IGBT
CN201270500Y (en) * 2008-07-29 2009-07-08 南京华士电子科技有限公司 Novel IGBT driver

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11178356A (en) * 1997-12-11 1999-07-02 Hitachi Ltd Control device for electric vehicle
CN1917369A (en) * 2006-08-30 2007-02-21 广州金升阳科技有限公司 IGBT drive, and process method for driving signal
CN201270500Y (en) * 2008-07-29 2009-07-08 南京华士电子科技有限公司 Novel IGBT driver
CN201266914Y (en) * 2008-08-22 2009-07-01 比亚迪股份有限公司 Driver circuit of IGBT

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103124133B (en) * 2012-12-22 2015-12-23 中国船舶重工集团公司第七0九研究所 The implementation method of a kind of unit 8 IGBT driver and isolation drive and protection
CN103124133A (en) * 2012-12-22 2013-05-29 中国船舶重工集团公司第七0九研究所 8-unit IGBT (insulated gate bipolar transistor) driver and method for realizing isolation drive and protection of driver
US9577569B2 (en) 2013-07-09 2017-02-21 Byd Company Limited Motor control system of electric vehicle and controlling method for motor control system of electric vehicle and electric vehicle
CN103475190A (en) * 2013-09-03 2013-12-25 山东润峰电子科技有限公司 Efficient power supply control and drive circuit for electromobile motor
CN103475190B (en) * 2013-09-03 2015-12-02 深圳红河马智能数字动力技术有限公司 High efficiency motor in electric automobile Energy control and drive circuit
CN106033885B (en) * 2015-03-20 2020-03-24 国家能源投资集团有限责任公司 DC micro-grid power distribution system
CN106033885A (en) * 2015-03-20 2016-10-19 神华集团有限责任公司 DC Microgrid Power Distribution System
CN107834823A (en) * 2017-11-09 2018-03-23 天津英捷利汽车技术有限责任公司 A kind of three-phase metal-oxide-semiconductor driving power for electric motor car AC machine controller
CN108566186A (en) * 2018-01-15 2018-09-21 上海力信电气技术有限公司 A kind of expansion door driving voltage holding circuit
CN112187220A (en) * 2020-11-27 2021-01-05 杭州飞仕得科技有限公司 Semiconductor drive circuit
CN112187220B (en) * 2020-11-27 2021-03-09 杭州飞仕得科技有限公司 Semiconductor drive circuit
CN113794410A (en) * 2021-09-10 2021-12-14 福州大学 Signal and power isolation system based on ARM intensive multi-path stepping motor control system
CN113794410B (en) * 2021-09-10 2023-07-18 福州大学 Signal and Power Isolation System Based on ARM Dense Multi-channel Stepper Motor Control System

Also Published As

Publication number Publication date
CN102082563B (en) 2013-05-29

Similar Documents

Publication Publication Date Title
CN102082563B (en) IGBT (insulated gate bipolar transistor) driver, signal processing method, motor control system and vehicle
CN102075110B (en) Systems and methods for commutating inductor current using matrix converter
CN103178694B (en) Insulated gate bipolar transistor gate driving push-pull circuit
CN105337483A (en) Device for preventing current from flowing backwards
CN203840210U (en) AC inverter circuit
CN103227628A (en) IGBT (Insulated Gate Bipolar Transistor) drive module for electric automobile
CN205377644U (en) Three level IGBT drive circuit on T type
CN105490511A (en) T-type three-level IGBT drive circuit
CN105119513A (en) Control method for optically-coupled isolation vehicle power supply photovoltaic inverter
CN203014660U (en) Double-channel output IGBT driving module and circuit board thereof
CN102594103A (en) High-voltage input fly-back topology-based series-wound field effect tube driving circuit
CN103715869B (en) The multi-path isolated power device switch drive module of power conversion controller
CN105262138B (en) A kind of photovoltaic module optimizer
CN103647437A (en) High-voltage high-current IGBT driving system
CN202772560U (en) IGBT overcurrent protection circuit and inductive load control circuit
WO2022165759A1 (en) Charging circuit and charging device
CN103124133A (en) 8-unit IGBT (insulated gate bipolar transistor) driver and method for realizing isolation drive and protection of driver
CN205212745U (en) Electric vehicle motor drive circuit
CN202633913U (en) Fork lock protection circuit based on insulated gate bipolar transistor (IGBT) half bridge gate drive
CN102201737B (en) High-order energy gaining voltage conversion circuit
CN208094431U (en) A kind of ACRCD clamp circuits preventing single-phase photovoltaic inversion topology power pipe over-voltage breakdown
CN105763065A (en) Vehicle-mounted inversion device for different input voltages
CN204733094U (en) Plasma cutting power supply circuit
CN205265646U (en) Breaking of contact is forced to close by clamper tube
CN211127564U (en) Driving and protecting circuit of intelligent power module

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant