CN102034798B - Packaging structure and packaging process - Google Patents
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- CN102034798B CN102034798B CN200910174516.7A CN200910174516A CN102034798B CN 102034798 B CN102034798 B CN 102034798B CN 200910174516 A CN200910174516 A CN 200910174516A CN 102034798 B CN102034798 B CN 102034798B
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- 238000004806 packaging method and process Methods 0.000 title abstract description 35
- 238000012858 packaging process Methods 0.000 title abstract description 22
- 239000000084 colloidal system Substances 0.000 claims abstract description 23
- 238000000034 method Methods 0.000 claims description 27
- 238000005538 encapsulation Methods 0.000 claims description 6
- 238000012856 packing Methods 0.000 claims 19
- 230000015572 biosynthetic process Effects 0.000 claims 1
- 239000000758 substrate Substances 0.000 abstract description 60
- 229910000679 solder Inorganic materials 0.000 description 121
- 239000011295 pitch Substances 0.000 description 32
- 239000008393 encapsulating agent Substances 0.000 description 21
- 238000003466 welding Methods 0.000 description 14
- 238000004519 manufacturing process Methods 0.000 description 10
- 238000005520 cutting process Methods 0.000 description 6
- 235000012431 wafers Nutrition 0.000 description 4
- 238000003486 chemical etching Methods 0.000 description 3
- 238000001020 plasma etching Methods 0.000 description 3
- 238000005476 soldering Methods 0.000 description 3
- 230000006870 function Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012536 packaging technology Methods 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 1
- 238000000608 laser ablation Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32135—Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/32145—Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73201—Location after the connecting process on the same surface
- H01L2224/73207—Bump and wire connectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/153—Connection portion
- H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
- H01L2924/15311—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA
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Abstract
Description
技术领域 technical field
本发明是有关于一种封装结构以及封装制程,且特别是有关于一种采用相邻(side by side)晶片配置的封装结构以及封装制程。The present invention relates to a packaging structure and a packaging process, and in particular to a packaging structure and a packaging process using side by side chip configuration.
背景技术 Background technique
系统级封装技术(SIP)是关于将晶圆级两种以上具有独立功能的晶片整合为单一封装的技术,其优势不仅包括尺寸较小,还包括每个功能晶片都可以单独开发,因此系统级封装技术具有比系统级晶片(SoC)更快的开发速度和更低的开发成本。System-in-package technology (SIP) is a technology that integrates two or more chips with independent functions at the wafer level into a single package. Its advantages include not only small size, but also the fact that each functional chip can be developed independently, so the Packaging technology has faster development speed and lower development cost than System-on-Chip (SoC).
堆叠式封装(Package on Package,POP)制程为系统级封装技术中常见的组装方法,系将不同功能晶片的封装单元相互堆叠,例如将存储器晶片封装单元堆叠于逻辑晶片封装单元上。然而,不同规格的各种存储器晶片封装单元通常具有不同的接脚布局。在不进行额外之线路布局的调整下,下层晶片封装单元(如逻辑晶片封装单元)的接脚布局仅能用于承载特定的存储器晶片封装单元。如此,相对限制了系统级封装技术的相容性与扩充性。Stacked package (Package on Package, POP) process is a common assembly method in system-in-package technology, which is to stack the packaging units of chips with different functions, such as stacking the memory chip packaging unit on the logic chip packaging unit. However, various memory chip package units with different specifications usually have different pin layouts. Without additional circuit layout adjustments, the pin layout of the underlying chip package unit (such as the logic chip package unit) can only be used to carry a specific memory chip package unit. In this way, the compatibility and expandability of the system-in-package technology are relatively limited.
发明内容 Contents of the invention
本发明提供一种封装结构,可有效整合具有不同接脚布局的多个晶片模组,以提高后续堆叠式封装制程的相容性与扩充性。The invention provides a packaging structure, which can effectively integrate multiple chip modules with different pin layouts, so as to improve the compatibility and expandability of the subsequent stacked packaging process.
本发明还提供前述封装结构的制程,用以整合具有不同接脚布局的多个晶片模组,以提供良好的相容性与扩充性。The present invention also provides the manufacturing process of the aforementioned packaging structure, which is used to integrate multiple chip modules with different pin layouts, so as to provide good compatibility and expandability.
为具体描述本发明内容,在此提出一种封装结构,包括一线路基板、一第一晶片模组、一第二晶片模组以及一封装胶体。线路基板具有一承载表面,而第一晶片模组与第二晶片模组相邻地配置于承载表面上。第一晶片模组具有多个第一对外接点,且每两相邻的第一对外接点之间具有一第一间距。第二晶片模组具有多个第二对外接点,且每两相邻的第二对外接点之间具有一第二间距,其中第一间距大于第二间距。此外,封装胶体配置于承载表面上,并且覆盖第一晶片模组以及第二晶片模组,且封装胶体具有多个第一开孔以及多个第二开孔。第一开孔分别暴露出第一对外接点,而第二开孔分别暴露出第二对外接点。In order to specifically describe the content of the present invention, a package structure is proposed here, including a circuit substrate, a first chip module, a second chip module, and an encapsulant. The circuit substrate has a carrying surface, and the first chip module and the second chip module are adjacently arranged on the carrying surface. The first chip module has a plurality of first outer junctions, and there is a first distance between every two adjacent first outer junctions. The second chip module has a plurality of second outer junctions, and there is a second distance between every two adjacent second outer junctions, wherein the first distance is greater than the second distance. In addition, the encapsulant is disposed on the carrying surface and covers the first chip module and the second chip module, and the encapsulant has a plurality of first openings and a plurality of second openings. The first openings respectively expose the first external contacts, and the second openings respectively expose the second external contacts.
在一实施例中,第一晶片模组包括一第一晶片以及多个第一焊球。第一晶片配置于承载表面上,而线路基板具有多个第一焊垫配置于第一晶片外围的承载表面上,且第一晶片电性连接到第一焊垫。第一焊球分别配置于第一焊垫上,以作为第一对外接点。In one embodiment, the first chip module includes a first chip and a plurality of first solder balls. The first chip is arranged on the carrying surface, and the circuit board has a plurality of first welding pads arranged on the carrying surface on the periphery of the first chip, and the first chip is electrically connected to the first welding pads. The first solder balls are respectively arranged on the first solder pads to serve as first external contacts.
在一实施例中,第一晶片模组包括一第一晶片以及多个第一焊球。第一晶片配置于承载表面上,且第一晶片的一顶面具有多个第一焊垫。第一焊球分别配置于第一焊垫上,以作为第一对外接点。In one embodiment, the first chip module includes a first chip and a plurality of first solder balls. The first chip is disposed on the carrying surface, and a top surface of the first chip has a plurality of first welding pads. The first solder balls are respectively arranged on the first solder pads to serve as first external contacts.
在一实施例中,第二晶片模组包括一第二晶片以及多个第二焊球。第二晶片配置于承载表面上,而线路基板具有多个第二焊垫配置于第二晶片外围的承载表面上,且第二晶片电性连接到第二焊垫。第二焊球分别配置于第二焊垫上,以作为第二对外接点。In one embodiment, the second chip module includes a second chip and a plurality of second solder balls. The second chip is arranged on the carrying surface, and the circuit substrate has a plurality of second welding pads arranged on the carrying surface on the periphery of the second chip, and the second chip is electrically connected to the second welding pads. The second solder balls are respectively arranged on the second solder pads to serve as second external contacts.
在一实施例中,第二晶片模组包括一第二晶片以及多个第二焊球。第二晶片配置于承载表面上,且第二晶片的一顶面具有多个第二焊垫。第二焊球分别配置于第二焊垫上,以作为第二对外接点。In one embodiment, the second chip module includes a second chip and a plurality of second solder balls. The second chip is arranged on the carrying surface, and a top surface of the second chip has a plurality of second welding pads. The second solder balls are respectively arranged on the second solder pads to serve as second external contacts.
在一实施例中,所述封装结构还包括一第一外部元件,配置于第一晶片上方并且接合至第一对外接点。In one embodiment, the package structure further includes a first external component disposed above the first chip and bonded to the first external contact.
在一实施例中,所述封装结构还包括一第二外部元件,配置于第二晶片上方并且接合至第二对外接点。In one embodiment, the package structure further includes a second external component disposed above the second chip and bonded to the second external contact.
在一实施例中,所述封装结构还包括多个第三焊球,配置于线路基板相对于承载表面的一底面上。In one embodiment, the package structure further includes a plurality of third solder balls disposed on a bottom surface of the circuit substrate opposite to the carrying surface.
本发明还提出一种封装制程。首先,提供一线路基板,此线路基板具有一承载表面。接着,相邻地配置一第一晶片模组以及一第二晶片模组于承载表面上。第一晶片模组具有多个第一对外接点,且每两相邻的第一对外接点之间具有一第一间距。第二晶片模组具有多个第二对外接点,且每两相邻的第二对外接点之间具有一第二间距,其中第一间距不等于第二间距。然后,形成一封装胶体于承载表面上,以覆盖第一晶片模组以及第二晶片模组。之后,形成多个第一开孔以及多个第二开孔于封装胶体内,第一开孔分别暴露出第一对外接点,而第二开孔分别暴露出第二对外接点。The invention also proposes a packaging process. Firstly, a circuit substrate is provided, and the circuit substrate has a carrying surface. Next, a first chip module and a second chip module are arranged adjacently on the carrying surface. The first chip module has a plurality of first outer junctions, and there is a first distance between every two adjacent first outer junctions. The second chip module has a plurality of second outer junctions, and there is a second distance between every two adjacent second outer junctions, wherein the first distance is not equal to the second distance. Then, an encapsulation compound is formed on the carrying surface to cover the first chip module and the second chip module. Afterwards, a plurality of first openings and a plurality of second openings are formed in the encapsulant, the first openings respectively expose the first external contacts, and the second openings respectively expose the second external contacts.
在一实施例中,线路基板具有位于承载表面上的多个第一焊垫以及多个第二焊垫,而相邻地配置第一晶片模组以及第二晶片模组的方法包括:分别在第一焊垫上形成多个第一焊球,以作为第一对外接点,并且分别在第二焊垫上形成多个第二焊球,以作为第二对外接点;以及,相邻地配置一第一晶片以及一第二晶片于承载表面上,并且接合第一晶片以及第二晶片至线路基板。第一焊垫位于第一晶片外围的承载表面上并且电性连接至第一晶片,而第二焊垫位于第二晶片外围的承载表面上并且电性连接至第二晶片。In one embodiment, the circuit substrate has a plurality of first bonding pads and a plurality of second bonding pads on the carrying surface, and the method for arranging the first chip module and the second chip module adjacently includes: A plurality of first solder balls are formed on the first pads to serve as first external contacts, and a plurality of second solder balls are respectively formed on the second pads to serve as second external contacts; and a first first solder ball is adjacently arranged. A chip and a second chip are placed on the carrying surface, and the first chip and the second chip are bonded to the circuit substrate. The first bonding pad is located on the carrying surface of the first chip and is electrically connected to the first chip, and the second bonding pad is located on the carrying surface of the second chip and is electrically connected to the second chip.
在一实施例中,线路基板具有位于承载表面上的多个第一焊垫,而相邻地配置第一晶片模组以及第二晶片模组的方法包括:分别在第一焊垫上形成多个第一焊球,以作为第一对外接点;相邻地配置一第一晶片以及一第二晶片于承载表面上,并且接合第一晶片以及第二晶片至线路基板,其中第一焊垫位于第一晶片外围的承载表面上并且电性连接至第一晶片,而第二晶片的一顶面具有多个第二焊垫;以及,分别在第二焊垫上形成多个第二焊球,以作为第二对外接点。In one embodiment, the circuit substrate has a plurality of first pads on the carrying surface, and the method for arranging the first chip module and the second chip module adjacently includes: forming a plurality of pads on the first pads respectively. The first solder ball is used as the first external connection point; a first chip and a second chip are adjacently arranged on the carrying surface, and the first chip and the second chip are bonded to the circuit substrate, wherein the first pad is located on the second chip. On the carrying surface of a chip periphery and electrically connected to the first chip, and a top surface of the second chip has a plurality of second soldering pads; and, forming a plurality of second soldering balls on the second soldering pads respectively, as The second pair of junctions.
在一实施例中,相邻地配置第一晶片模组以及第二晶片模组的方法包括:相邻地配置一第一晶片以及一第二晶片于承载表面上,并且接合第一晶片以及第二晶片至线路基板,其中第一晶片的一顶面具有多个第一焊垫,而第二晶片的一顶面具有多个第二焊垫;分别在第一焊垫上形成多个第一焊球,以作为第一对外接点;以及,分别在第二焊垫上形成多个第二焊球,以作为第二对外接点。In one embodiment, the method for arranging a first chip module and a second chip module adjacently includes: arranging a first chip and a second chip adjacently on a carrier surface, and bonding the first chip and the second chip Two wafers to circuit substrates, wherein a top surface of the first wafer has a plurality of first welding pads, and a top surface of the second wafer has a plurality of second welding pads; respectively form a plurality of first welding pads on the first welding pads balls as the first external contact points; and forming a plurality of second solder balls on the second solder pads respectively to serve as the second external contact points.
在一实施例中,所述封装制程更包括形成多个第三焊球于线路基板相对于承载表面的一底面上。In one embodiment, the packaging process further includes forming a plurality of third solder balls on a bottom surface of the circuit substrate opposite to the carrying surface.
在一实施例中,形成第一开孔以及第二开孔于封装胶体内的方法包括雷射烧孔(laser ablation)。In one embodiment, the method of forming the first opening and the second opening in the encapsulant includes laser ablation.
在一实施例中,所述封装制程还包括配置一第一外部元件于第一晶片模组上方,并且接合第一外部元件至第一对外接点。In one embodiment, the packaging process further includes disposing a first external component above the first chip module, and bonding the first external component to the first external contact.
在一实施例中,所述封装制程还包括配置一第二外部元件于第二晶片模组上方,并且接合第二外部元件至第二对外接点。In one embodiment, the packaging process further includes disposing a second external component above the second chip module, and bonding the second external component to the second external contact.
基于上述,本发明封装结构以及封装制程整合了具有不同接脚布局(即接点间距不同)的多个晶片模组,因此可同时相容于多种不同规格的外部元件,而具有良好的相容性与扩充性。Based on the above, the packaging structure and packaging process of the present invention integrate multiple chip modules with different pin layouts (that is, different contact pitches), so they can be compatible with a variety of external components of different specifications at the same time, and have good compatibility. sex and expandability.
为让本发明上述特征和优点能更明显易懂,下文特举实施例,并配合所附图作详细说明如下。In order to make the above-mentioned features and advantages of the present invention more comprehensible, the following specific embodiments are described in detail in conjunction with the accompanying drawings.
附图说明 Description of drawings
图1为本发明一实施例的一种封装结构;Fig. 1 is a kind of packaging structure of an embodiment of the present invention;
图2为图1封装结构进行堆叠式封装制程之后所获得的堆叠封装结构;FIG. 2 is a stacked packaging structure obtained after the packaging structure in FIG. 1 is subjected to a stacked packaging process;
图3为图1与图2封装结构的制作流程;Fig. 3 is the manufacturing process of the packaging structure in Fig. 1 and Fig. 2;
图4为本发明另一实施例的一种封装结构;FIG. 4 is a package structure of another embodiment of the present invention;
图5为图4封装结构进行堆叠式封装制程之后所获得的堆叠封装结构;FIG. 5 is a stacked packaging structure obtained after the packaging structure in FIG. 4 is subjected to a stacked packaging process;
图6为图4与图5封装结构的制作流程;Fig. 6 is the manufacturing process of the packaging structure in Fig. 4 and Fig. 5;
图7为本发明又一实施例的一种封装结构;FIG. 7 is a packaging structure according to another embodiment of the present invention;
图8为图7封装结构进行堆叠式封装制程之后所获得的堆叠封装结构;FIG. 8 is a stacked packaging structure obtained after the packaging structure in FIG. 7 is subjected to a stacked packaging process;
图9为图7与图8封装结构的制作流程。FIG. 9 is a manufacturing process of the package structure shown in FIG. 7 and FIG. 8 .
附图标记说明Explanation of reference signs
100、400、700:封装结构; 110、410、710-线路基板;100, 400, 700: package structure; 110, 410, 710-circuit substrate;
112、412、712-承载表面; 114、414、726-第一焊垫;112, 412, 712 - bearing surface; 114, 414, 726 - first pad;
116、436、736-第二焊垫; 118、418、718-底面;116, 436, 736-the second welding pad; 118, 418, 718-the bottom surface;
119、419、719-第三焊垫; 120、420、720-第一晶片模组;119, 419, 719-the third welding pad; 120, 420, 720-the first chip module;
122、422、722-第一晶片; 124、424、724-第一焊球;122, 422, 722-first chip; 124, 424, 724-first solder ball;
132、432、732-第二晶片; 134、434、734-第二焊球;132, 432, 732-second chip; 134, 434, 734-second solder ball;
140、440、740-封装胶体; 142、442、742-第一开孔;140, 440, 740-encapsulation colloid; 142, 442, 742-first opening;
144、444、744-第二开孔; 130、430、730-第二晶片模组;144, 444, 744-the second opening; 130, 430, 730-the second chip module;
160、460、760-第三焊球; 170、470、770-第一外部元件;160, 460, 760 - third solder ball; 170, 470, 770 - first external component;
172、472、772-焊垫; 180、480、780-第二外部元件;172, 472, 772-welding pads; 180, 480, 780-second external components;
182、482、782-焊垫; 432a、722a、732a-顶面;182, 482, 782-welding pads; 432a, 722a, 732a-top surface;
P1-第一间距; P2-第二间距;P1-first pitch; P2-second pitch;
152、154、452、454、752、754-导线。152, 154, 452, 454, 752, 754-wire.
具体实施方式 Detailed ways
本发明在一线路基板的承载表面上以相邻方式设置具有不同之接脚布局的一第一晶片模组以及一第二晶片模组。更详细而言,第一晶片模组的多个第一对外接点之间例如具有一第一间距,而第二晶片模组的多个第二对外接点之间例如具有一第二间距,且第一间距大于第二间距。此外,覆盖于承载表面上的封装胶体会暴露出第一对外接点以及第二对外接点,以供第一晶片模组与第二晶片模组与外部元件接合。In the present invention, a first chip module and a second chip module with different pin layouts are adjacently arranged on the carrying surface of a circuit substrate. More specifically, there is, for example, a first distance between the plurality of first external connections of the first chip module, and there is, for example, a second distance between the plurality of second external connections of the second chip module, and the first The first pitch is greater than the second pitch. In addition, the encapsulant covering the carrying surface exposes the first external contact point and the second external contact point for bonding the first chip module and the second chip module to external components.
此封装结构以及封装制程可应用于系统级封装技术(SIP)或是其他适用的技术领域。第一晶片模组以及第二晶片模组例如是逻辑晶片模组,用以与上层的存储器晶片模组接合。此外,随着上层元件的规格不同,第一晶片模组以及第二晶片模组的接脚可以选择采用扇入(fan-in)或是扇出(fan-out)的设计。以下将举多个实施例来说明所述多种设计的变化。The packaging structure and packaging process can be applied to system-in-package (SIP) or other applicable technical fields. The first chip module and the second chip module are, for example, logic chip modules, and are used for bonding with an upper memory chip module. In addition, as the specifications of the upper components are different, the pins of the first chip module and the second chip module can choose to adopt fan-in or fan-out design. Several embodiments will be given below to illustrate the various design changes.
图1为本发明一实施例的一种封装结构。如图1所示,封装结构100包括一线路基板110、一第一晶片模组120、一第二晶片模组130以及一封装胶体140。本实施例的第一晶片模组120以及第二晶片模组130都是采用扇出的接脚设计。线路基板110具有一承载表面112以及位于承载表面112上的多个第一焊垫114以及多个第二焊垫116。每两相邻的第一焊垫114之间具有一第一间距P1,而每两相邻的第二焊垫116之间具有一第二间距P2,且第一间距P1大于第二间距P2。FIG. 1 is a package structure of an embodiment of the present invention. As shown in FIG. 1 , the
更详细而言,第一晶片模组120包括一第一晶片122以及多个第一焊球124,其中第一晶片122配置于承载表面112上,且第一焊垫114位于第一晶片122外围。第一焊球124配置于第一焊垫114上。在本实施例中,第一晶片122是采用打线接合方式通过多条导线152电性连接到线路基板110,再通过线路基板110的内部线路(未绘示)电性连接到第一焊垫114。当然,第一晶片122也可以采用覆晶接合或是其他可能的方式电性连接到线路基板110。此外,第一焊球124分别配置于第一焊垫114上,以作为前述的第一对外接点,且其同样具有第一间距P1。More specifically, the
此外,第二晶片模组130包括一第二晶片132以及多个第二焊球134,其中第二晶片132配置于承载表面112上,且第二焊垫116位于第二晶片132外围。第二焊球134配置于第二焊垫116上。在本实施例中,第二晶片132是采用打线接合方式通过多条导线154电性连接到线路基板110,再通过线路基板110的内部线路(未绘示)电性连接到第二焊垫116。当然,第二晶片132也可以采用覆晶接合或是其他可能的方式电性连接到线路基板110。此外,第二焊球134分别配置于第二焊垫116上,以作为前述的第二对外接点,且其同样具有第二间距P2。In addition, the
封装胶体140配置于承载表面112并且覆盖第一晶片122以及第二晶片132。此外,封装胶体140具有多个第一开孔142以及多个第二开孔144,用以分别暴露出第一焊球124以及第二焊球134。The
请再参考图1,线路基板110还可具有相对于承载表面112的一底面118以及配置于底面118上的多个第三焊垫119。每一第三焊垫119上可配置有一第三焊球160,以供封装结构100连接至外部电路,例如印刷电路板等。Please refer to FIG. 1 again, the
图2为图1封装结构100进行堆叠式封装(Package on Package,POP)制程之后所获得的堆叠封装结构。如图2所示,一第一外部元件170以及一第二外部元件180分别配置于第一晶片122以及第二晶片132上方。在此,第一外部元件170以及第二外部元件180例如分别是晶片堆叠(chip stacked)型态的封装单元。第一外部元件170具有对应于第一间距P1的多个焊垫172,并且通过焊垫172以及焊垫172上可能另外形成的焊球来与第一焊球124接合。第二外部元件180具有对应于第二间距P2的多个焊垫182,并且通过焊垫182以及焊垫182上可能另外形成的焊球来与第二焊球134接合。因此,本实施例可以在封装结构100上同时堆叠相邻且具有不同接脚布局的第一外部元件170以及第二外部元件180,而可提供良好的相容性与扩充性。FIG. 2 is a stacked package structure obtained after the
图3为图1与图2封装结构的制作流程,请同时参照图1-3。首先,如步骤310所示,提供线路基板110,其中线路基板110具有承载表面112以及位于承载表面112上的第一焊垫114以及第二焊垫116。FIG. 3 shows the manufacturing process of the package structure shown in FIG. 1 and FIG. 2 , please refer to FIGS. 1-3 at the same time. First, as shown in
接着,如步骤320所示,分别在第一焊垫114上形成第一焊球124,以作为第一对外接点,以及分别在第二焊垫116上形成第二焊球134,以作为第二对外接点。Next, as shown in
然后,如步骤330所示,相邻地配置第一晶片122以及第二晶片132于承载表面112上,并且采用打线接合或是其他可能的接合技术来接合第一晶片122以及第二晶片132至线路基板110。第一焊垫114位于第一晶片122外围并且电性连接至第一晶片122,而第二焊垫116位于第二晶片132外围并且电性连接至第二晶片132。Then, as shown in
本实施例虽然先进行步骤320再进行步骤330,但实际上,步骤320以及步骤330的顺序是可以互换的。In this embodiment, although
接着,如步骤340所示,形成封装胶体140于承载表面112上,以覆盖第一晶片122以及第二晶片132。之后,如步骤350所示,形成第一开孔142以及多个第二开孔144于封装胶体140内。第一开孔142分别暴露出第一焊球124,而第二开孔144分别暴露出第二焊球134。本实施例用以形成第一开孔142以及第二开孔144的方法例如是雷射烧孔或是其他如化学蚀刻或是电浆蚀刻等可能的方法。Next, as shown in
另外,本实施例还可如步骤360所示,配置第一外部元件170于第一晶片122上方,并且接合第一外部元件170至第一焊球124。此外,配置第二外部元件180于第二晶片132上方,并且接合第二外部元件180至第二焊球134,以得到如图2所示的堆叠封装结构。In addition, in this embodiment, as shown in
值得一提的是,本实施例所述的封装制程可以采用经由裁切阵列基板所得到的基板单元来制作。或者,采用尚未裁切的阵列基板来制作,并且等到完成前述步骤350或是步骤360之后,再进行切割制程,以得到如图1或是图2所绘示的封装结构。此外,在前述步骤350或是步骤360之后,还可以在线路基板110底部的第三焊垫119上形成第三焊球160,并且对第三焊球160进行回焊等步骤。所述步骤应为本领域技术人员所理解,此处不再逐一赘述。It is worth mentioning that the packaging process described in this embodiment can be fabricated by using the substrate unit obtained by cutting the array substrate. Alternatively, the uncut array substrate is used for fabrication, and the cutting process is performed after the
图4为本发明另一实施例的一种封装结构。如图4所示,封装结构400包括一线路基板410、一第一晶片模组420、一第二晶片模组430以及一封装胶体440。本实施例的第一晶片模组420采用扇出的接脚设计,而第二晶片模组430采用扇入的接脚设计。换言之,线路基板410具有一承载表面412以及位于承载表面412上的多个第一焊垫414。每两相邻的第一焊垫414之间具有一第一间距P1。FIG. 4 is a package structure of another embodiment of the present invention. As shown in FIG. 4 , the
第一晶片模组420包括一第一晶片422以及多个第一焊球424,其中第一晶片422配置于承载表面412上,且第一焊垫414位于第一晶片422外围。第一焊球424配置于第一焊垫414上。在本实施例中,第一晶片422是采用打线接合方式通过多条导线452电性连接到线路基板410,再通过线路基板410的内部线路(未绘示)电性连接到第一焊垫414。当然,第一晶片422也可以采用覆晶接合或是其他可能的方式电性连接到线路基板410。此外,第一焊球424分别配置于第一焊垫414上,其同样具有第一间距P1。The
此外,第二晶片模组430包括一第二晶片432以及多个第二焊球434,其中第二晶片432配置于承载表面412上,且第二晶片432的一顶面432a具有多个第二焊垫436。每两相邻的第二焊垫436之间具有一第二间距P2,且第一间距P1大于第二间距P2。在本实施例中,第二晶片432是采用打线接合方式通过多条导线454电性连接到线路基板410。当然,第二晶片432也可以采用覆晶接合或是其他可能的方式电性连接到线路基板410。此外,第二焊球434分别配置于第二焊垫436上,其同样具有第二间距P2。In addition, the
封装胶体440配置于承载表面412并且覆盖第一晶片422以及第二晶片432。此外,封装胶体440具有多个第一开孔442以及多个第二开孔444,用以分别暴露出第一焊球424以及第二焊球434。The
请再参考图4,线路基板410还可具有相对于承载表面412的一底面418以及配置于底面418上的多个第三焊垫419。每一第三焊垫419上可配置有一第三焊球460,以供封装结构400连接至外部电路,例如印刷电路板等。Referring to FIG. 4 again, the
图5为图4封装结构400进行堆叠式封装(Package on Package,POP)制程之后所获得的堆叠封装结构。如图5所示,一第一外部元件470以及一第二外部元件480分别配置于第一晶片422以及第二晶片432上方。在此,第一外部元件470以及第二外部元件480例如分别是晶片堆叠(chip stacked)型态的封装单元。第一外部元件470具有对应于第一间距P1的多个焊垫472,并且通过焊垫472以及焊垫472上可能另外形成的焊球来与第一焊球424接合。第二外部元件480具有对应于第二间距P2的多个焊垫482,并且通过焊垫482以及焊垫482上可能另外形成的焊球来与第二焊球434接合。因此,本实施例可以在封装结构400上同时堆叠相邻且具有不同接脚布局的第一外部元件470以及第二外部元件480,而可提供良好的相容性与扩充性。FIG. 5 is a stacked package structure obtained after the
图6为图4与图5封装结构的制作流程,请同时参照图4-6。首先,如步骤610所示,提供线路基板410,其中线路基板410具有承载表面412以及位于承载表面412上的第一焊垫414。FIG. 6 shows the manufacturing process of the package structure shown in FIG. 4 and FIG. 5 , please refer to FIGS. 4-6 at the same time. First, as shown in
接着,如步骤620所示,在第一焊垫414上形成第一焊球424。然后,如步骤630所示,相邻地配置第一晶片422以及第二晶片432于承载表面412上,并且采用打线接合或是其他可能的接合技术来接合第一晶片422以及第二晶片432至线路基板410。第一焊垫414位于第一晶片422外围并且电性连接至第一晶片422,而第二晶片432的顶面432a具有多个第二焊垫436。Next, as shown in
本实施例虽然先进行步骤620再进行步骤630,但实际上,步骤620以及步骤630的顺序是可以互换的。In this embodiment, although
接着,如步骤640所示,分别在第二焊垫436上形成多个第二焊球434。并且,如步骤650所示,形成封装胶体440于承载表面412上,以覆盖第一晶片422以及第二晶片432。Next, as shown in
之后,如步骤660所示,形成第一开孔442以及多个第二开孔444于封装胶体440内。第一开孔442分别暴露出第一焊球424,而第二开孔444分别暴露出第二焊球434。本实施例用以形成第一开孔442以及第二开孔444的方法例如是雷射烧孔或是其他如化学蚀刻或是电浆蚀刻等可能的方法。After that, as shown in
另外,本实施例还可如步骤670所示,配置第一外部元件470于第一晶片422上方,并且接合第一外部元件470至第一焊球424。此外,配置第二外部元件480于第二晶片432上方,并且接合第二外部元件480至第二焊球434,以得到如图5所示的堆叠封装结构。In addition, in this embodiment, as shown in
值得一提的是,本实施例所述的封装制程可以采用经由裁切阵列基板所得到的基板单元来制作。或者,采用尚未裁切的阵列基板来制作,并且等到完成前述步骤660或是步骤670之后,再进行切割制程,以得到如图4或是图5所绘示的封装结构。此外,在前述步骤660或是步骤670之后,还可以在线路基板410底部的第三焊垫419上形成第三焊球460,并且对第三焊球460进行回焊等步骤。所述步骤应为本领域技术人员所理解,此处不再逐一赘述。It is worth mentioning that the packaging process described in this embodiment can be fabricated by using the substrate unit obtained by cutting the array substrate. Alternatively, the uncut array substrate is used for fabrication, and the cutting process is performed after the
基于前述实施例的内容,本发明的另一实施例也可以改为将第一晶片模组采用扇入的接脚设计,而第二晶片模组改为采用扇出的接脚设计。或者,从另一个角度来看,此另一个实施例的封装结构与封装制程会类似于图4-6所绘示者,惟较显著的差异在于第一间距P1会小于第二间距P2。Based on the content of the foregoing embodiments, in another embodiment of the present invention, the first chip module adopts a fan-in pin design, while the second chip module adopts a fan-out pin design instead. Or, viewed from another perspective, the packaging structure and packaging process of this other embodiment are similar to those shown in FIGS. 4-6 , but the more significant difference is that the first pitch P1 is smaller than the second pitch P2 .
图7为本发明又一实施例的一种封装结构。如图7所示,封装结构700包括一线路基板710、一第一晶片模组720、一第二晶片模组730以及一封装胶体740。本实施例的第一晶片模组720以及第二晶片模组730皆采用扇入的接脚设计。FIG. 7 is a package structure according to another embodiment of the present invention. As shown in FIG. 7 , the
第一晶片模组720包括一第一晶片722以及多个第一焊球724,其中第一晶片722配置于承载表面712上,且第一晶片722的一顶面722a具有多个第一焊垫726。每两相邻的第一焊垫726之间具有一第一间距P1。在本实施例中,第一晶片722是采用打线接合方式通过多条导线752电性连接到线路基板710。当然,第一晶片722也可以采用覆晶接合或是其他可能的方式电性连接到线路基板710。此外,第一焊球724分别配置于第一焊垫726上,其同样具有第一间距P1。The
此外,第二晶片模组730包括一第二晶片732以及多个第二焊球734,其中第二晶片732配置于承载表面712上,且第二晶片732的一顶面732a具有多个第二焊垫736。每两相邻的第二焊垫736之间具有一第二间距P2,且第一间距P1大于第二间距P2。在本实施例中,第二晶片732是采用打线接合方式通过多条导线754电性连接到线路基板710。当然,第二晶片732也可以采用覆晶接合或是其他可能的方式电性连接到线路基板710。此外,第二焊球734分别配置于第二焊垫736上,其同样具有第二间距P2。In addition, the
封装胶体740配置于承载表面712并且覆盖第一晶片722以及第二晶片732。此外,封装胶体740具有多个第一开孔742以及多个第二开孔744,用以分别暴露出第一焊球724以及第二焊球734。The
请再参考图7,线路基板710还可具有相对于承载表面712的一底面718以及配置于底面718上的多个第三焊垫719。每一第三焊垫719上可配置有一第三焊球760,以供封装结构700连接至外部电路,例如印刷电路板等。Referring to FIG. 7 again, the
图8为图7封装结构700进行堆叠式封装制程之后所获得的堆叠封装结构。如图8所示,一第一外部元件770以及一第二外部元件780分别配置于第一晶片722以及第二晶片732上方。在此,第一外部元件770以及第二外部元件780例如分别是晶片堆叠型态的封装单元。第一外部元件770具有对应于第一间距P1的接脚布局,并且通过多个焊垫772而与第一焊球724接合。第二外部元件780具有对应于第二间距P2的接脚布局,并且通过多个焊垫782而与第二焊球734接合。因此,本实施例可以在封装结构700上同时堆叠相邻且具有不同接脚布局的第一外部元件770以及第二外部元件780,而可提供良好的相容性与扩充性。FIG. 8 is a package-on-package structure obtained after the package-on-
图9为图7与图8封装结构的制作流程,请同时参照图7-9。首先,如步骤910所示,提供线路基板710,其中线路基板710具有承载表面712。FIG. 9 shows the manufacturing process of the package structure shown in FIG. 7 and FIG. 8 , please refer to FIGS. 7-9 at the same time. First, as shown in
接着,如步骤920所示,相邻地配置第一晶片722以及第二晶片732于承载表面712上,并且采用打线接合或是其他可能的接合技术来接合第一晶片722以及第二晶片732至线路基板710。第一晶片722的顶面722a具有多个第一焊垫726,而第二晶片732的顶面732a具有多个第二焊垫736。Next, as shown in
然后,如步骤930所示,分别在第一焊垫726上形成多个第一焊球724,分别在第二焊垫736上形成多个第二焊球734。并且,如步骤940所示,形成封装胶体740于承载表面712上,以覆盖第一晶片722以及第二晶片732。Then, as shown in
之后,如步骤950所示,形成第一开孔742以及多个第二开孔744于封装胶体740内。第一开孔742分别暴露出第一焊球724,而第二开孔744分别暴露出第二焊球734。本实施例用以形成第一开孔742以及第二开孔744的方法例如是雷射烧孔或是其他如化学蚀刻或是电浆蚀刻等可能的方法。Afterwards, as shown in
另外,本实施例还可如步骤960所示,配置第一外部元件770于第一晶片722上方,并且接合第一外部元件770至第一焊球724。此外,配置第二外部元件780于第二晶片732上方,并且接合第二外部元件780至第二焊球734,以得到如图8所示的堆叠封装结构。In addition, in this embodiment, as shown in
值得一提的是,本实施例所述的封装制程可以采用经由裁切阵列基板所得到的基板单元来制作。或者,采用尚未裁切的阵列基板来制作,并且等到完成前述步骤950或是步骤960之后,再进行切割制程,以得到如图7或是图8所绘示的封装结构。此外,在前述步骤950或是步骤960之后,还可以在线路基板710底部的第三焊垫719上形成第三焊球760,并且对第三焊球760进行回焊等步骤。所述步骤应为本领域技术人员所理解,此处不再逐一赘述。It is worth mentioning that the packaging process described in this embodiment can be fabricated by using the substrate unit obtained by cutting the array substrate. Alternatively, the uncut array substrate is used for fabrication, and the cutting process is performed after the
虽然前述多个实施例是以整合了两种不同接脚布局的晶片模组为例进行说明,但本发明并不限定封装结构中可整合的晶片模组种类的数量,其可能随着实际的设计需求而有所不同。Although the above-mentioned embodiments are described by taking chip modules integrating two different pin layouts as an example, the present invention does not limit the number of types of chip modules that can be integrated in the package structure, which may vary with the actual vary according to design requirements.
综上所述,本发明封装结构以及封装制程整合了具有不同接脚布局(即接点间距不同)的多个晶片模组,且所述晶片模组相邻配置,以作为堆叠式封装制程中的下层封装单元。换言之,本发明封装结构以及封装制程同时实现了相邻晶片配置以及堆叠式封装技术,并且兼具该两者的优点。如此一来,下层封装单元可同时相容于多种不同规格的外部元件,例如不同规格的存储器封装单元。因此,本发明提出的封装结构以及封装制程具有良好的相容性与扩充性。In summary, the packaging structure and packaging process of the present invention integrate a plurality of chip modules with different pin layouts (that is, different contact pitches), and the chip modules are arranged adjacent to each other to serve as a stacked packaging process. The lower packaging unit. In other words, the packaging structure and packaging process of the present invention simultaneously realize the adjacent chip configuration and the stacked packaging technology, and have the advantages of both. In this way, the lower packaging unit can be compatible with a variety of external components with different specifications at the same time, such as memory packaging units with different specifications. Therefore, the packaging structure and packaging process proposed by the present invention have good compatibility and scalability.
最后应说明的是:以上实施例仅用以说明本发明的技术方案而非对其进行限制,尽管参照较佳实施例对本发明进行了详细的说明,本领域的普通技术人员应当理解:其依然可以对本发明的技术方案进行修改或者等同替换,而这些修改或者等同替换亦不能使修改后的技术方案脱离本发明技术方案的精神和范围。Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention and not to limit them. Although the present invention has been described in detail with reference to the preferred embodiments, those of ordinary skill in the art should understand that: it still Modifications or equivalent replacements can be made to the technical solutions of the present invention, and these modifications or equivalent replacements cannot make the modified technical solutions deviate from the spirit and scope of the technical solutions of the present invention.
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