CN101980392B - Light-emitting diode (LED) packaging method, LED packaging structure, LED lamp and lighting equipment - Google Patents
Light-emitting diode (LED) packaging method, LED packaging structure, LED lamp and lighting equipment Download PDFInfo
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- CN101980392B CN101980392B CN2010102293935A CN201010229393A CN101980392B CN 101980392 B CN101980392 B CN 101980392B CN 2010102293935 A CN2010102293935 A CN 2010102293935A CN 201010229393 A CN201010229393 A CN 201010229393A CN 101980392 B CN101980392 B CN 101980392B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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Abstract
The invention is applied in the field of LED packaging and provides a light-emitting diode (LED) packaging method, an LED packaging structure, an LED lamp and lighting equipment. The method comprises the following steps of: fixing an LED chip on a substrate, wherein the substrate is provided with an alloy layer and the LED chip is contacted with the alloy layer; electrically connecting the LED chip with a lead frame fixed on the substrate; and packaging the LED chip by using molten glass to form a glass packaging layer, wherein the alloy layer can be molten by the heat of the molten glass andthe molten alloy layer is adhered to the LED chip to form eutectic. An LED is packaged by glass, so that the LED packaging structure with high light-emitting efficiency and excellent high temperatureresistance and ultraviolet (UV) resistance is obtained; and when the glass is used for packaging, the alloy is molten to absorb a great deal of heat of the molten glass, so that the damage to the LEDchip caused by the high temperature of the glass during packaging is avoided.
Description
Technical field
The invention belongs to the LED encapsulation field, relate in particular to a kind of LED method for packing, encapsulating structure, LED lamp and lighting apparatus.
Background technology
Along with the development of LED at lighting field, people are more and more higher to the requirement of its light extraction efficiency, and the encapsulating material of LED and encapsulating structure are the principal elements that affects light extraction efficiency.The encapsulating material that adopts at present mainly is silica gel, comprises that refractive index is that 1.41 methyl type silica gel (being called for short " 1.41 type silica gel ") and refractive index are 1.5 methylbenzene fundamental mode silica gel (abbreviation " 1.5 type silica gel ").For 1.41 type silica gel, its reliability performance of ultraviolet resistance (UV) (high temperature resistant) is more much better than 1.5 type silica gel, but its oxygen flow water vapour permeability is higher, and is good not as good as 1.5 type silica gel on the contrary to the protection effect of chip.In addition, 1.41 type silica gel refractive indexes and light transmittance are lower, and it is also effective not as good as the bright dipping of 1.5 type silica gel that it goes out light effect.In a word, the effective silica gel reliability of bright dipping is relatively relatively poor, and it is relatively poor that the silica gel that reliability is good goes out light effect on the contrary, and therefore, the LED product of silica gel packaging can not reach the good effect of high and high temperature resistant, the anti-UV performance of light extraction efficiency simultaneously.
Summary of the invention
The purpose of the embodiment of the invention is to provide a kind of LED method for packing, is intended to solve the problem of low, high temperature resistant, the anti-UV poor performance of LED product light extraction efficiency that traditional LED method for packing is packaged into.
The embodiment of the invention is achieved in that a kind of LED method for packing, and described method comprises the steps:
Led chip is fixed on the substrate; Described led chip is electrically connected with lead frame on being fixed on described substrate;
Adopt melten glass to encapsulate described led chip, form the glass packaging layer, the described alloy-layer of the heat melts of described melten glass, the bonding formation eutectic of the alloy-layer after the fusing and described led chip;
The described step that led chip is fixed on the substrate is specially:
At described substrate groove is set, and in described recess edge draw-in groove is set;
The inwall of described groove is provided with alloy-layer;
Described led chip is placed described groove, and described led chip is contacted with described alloy-layer;
The card taking button is filled in the described draw-in groove, described buckle and described led chip is pushed mutually, with fixed L ED chip.
Another purpose of the embodiment of the invention is to provide a kind of LED encapsulating structure, described LED encapsulating structure comprises substrate, is fixed on the lead frame on the described substrate, and the led chip that is electrically connected with described lead frame, described LED encapsulating structure also comprises the glass packaging layer that is packaged in described led chip outside;
Described substrate is provided with groove, and described recess edge is provided with draw-in groove;
The inwall of described groove is provided with alloy-layer;
Described led chip places described groove, and mutually bonding with described alloy-layer;
Be provided with elastic buckle in the described draw-in groove, described led chip is pushed by described buckle and is fixed in the described groove.
Another purpose of the embodiment of the invention is to provide a kind of LED lamp, and described LED lamp comprises above-mentioned LED encapsulating structure.
Another purpose of the embodiment of the invention is to provide a kind of lighting apparatus, and described lighting apparatus comprises above-mentioned LED lamp.
The embodiment of the invention adopts glass packaging LED, and the light transmittance of glass and reliability are all higher, and glass packaging LED can obtain the LED product of high light-emitting efficiency, high temperature resistant, anti-UV function admirable; And the oxygen flow rate of perviousness of glass is lower, and has good heat conductivility, to the protection better effects if of chip; In the encapsulation process, alloy absorbs most of heat and melts rapidly, and the bonding chip forms eutectic, has avoided the high temperature of melten glass to the damage of led chip.
Description of drawings
Fig. 1 shows the flow chart of the LED method for packing that first embodiment of the invention provides;
Fig. 2 and Fig. 3 show the plan structure schematic diagram of the substrate that second embodiment of the invention provides;
Fig. 4 shows the cross-sectional view of the substrate that second embodiment of the invention provides;
Fig. 5 shows the led chip stationary state cross-sectional view that second embodiment of the invention provides;
Fig. 6 shows the cross-sectional view of the lead frame that third embodiment of the invention provides;
Fig. 7 shows the plan structure schematic diagram of the lead frame that third embodiment of the invention provides;
Fig. 8 shows the structural representation of the glass packaging layer that fourth embodiment of the invention provides, and the LED encapsulating structure schematic diagram that provides of the 7th, eight embodiment;
Fig. 9 shows the structural representation of the glass packaging layer that fourth embodiment of the invention provides, and the LED encapsulating structure schematic diagram that provides of the 9th embodiment.
Embodiment
For the purpose, technical scheme and the advantage that make invention is clearer, below in conjunction with drawings and Examples, the present invention is further elaborated.Should be appreciated that specific embodiment described herein only in order to explain the present invention, is not intended to limit the present invention.
The embodiment of the invention adopts glass packaging LED, to improve the light extraction efficiency of LED product; Fusion process by alloy absorbs the heat of melten glass, avoids high temp glass to the damage of chip.
The embodiment of the invention provides a kind of LED method for packing, and the method comprises the steps:
Led chip is fixed on the substrate; Wherein, substrate is provided with alloy-layer, contacts with alloy-layer when led chip is fixed on the substrate;
Led chip is electrically connected with lead frame on being fixed on substrate;
Adopt the melten glass packaging LED chips, form the glass packaging layer, the heat melts alloy-layer of melten glass, the bonding formation eutectic of the alloy-layer after the fusing and led chip.
The embodiment of the invention also provides a kind of LED encapsulating structure, this LED encapsulating structure comprises substrate, is fixed on the lead frame on the substrate, and the led chip that is electrically connected with lead frame, this LED encapsulating structure also comprises the glass packaging layer that is packaged in the led chip outside;
Pass through alloy bonding between this led chip and the substrate.
The embodiment of the invention also provides a kind of LED lamp, and this LED lamp comprises above-mentioned LED encapsulating structure.
The embodiment of the invention also provides a kind of lighting apparatus, and this lighting apparatus comprises above-mentioned LED lamp.
The embodiment of the invention adopts glass packaging LED, and the light transmittance of glass and reliability are all higher, and glass packaging LED can obtain the LED product of high light-emitting efficiency, high temperature resistant, anti-UV function admirable; And the oxygen flow rate of perviousness of glass is lower, and has good heat conductivility, to the protection better effects if of chip; In the encapsulation process, alloy absorbs most of heat and melts rapidly, and the bonding chip forms eutectic, has avoided the high temperature of melten glass to the damage of led chip.
Below in conjunction with specific embodiment specific implementation of the present invention is described in detail:
Embodiment one:
Fig. 1 shows the flow chart of the LED method for packing that first embodiment of the invention provides, and details are as follows:
In step S101, led chip is fixed on the substrate.
Wherein, substrate is provided with alloy-layer; When being fixed on the substrate, led chip contacts with alloy-layer.This alloy-layer is generally alloy layer.
In step S102, led chip is electrically connected with lead frame on being fixed on substrate.
In step S 103, adopt the melten glass packaging LED chips, form the glass packaging layer, the fusible alloy-layer of the heat of melten glass, the bonding formation eutectic of the alloy-layer after the fusing and led chip.
In above-mentioned steps S103, alloy material fusing (undergoing phase transition) absorbs a large amount of heats, and then has avoided the damage of high temp glass to led chip.
The refractive index of glass and light transmittance are relatively high, are conducive to the bright dipping of LED product, and reliability is good, can improve that the LED product is high temperature resistant, the performance of anti-UV; And glass is inorganic matter, and other encapsulating materials (such as epoxy resin, silica gel etc.) are more stable relatively; The oxygen flow rate of perviousness of glass is low, can reduce oxygen and moisture to the impact of chip, and has good heat conductivility, and is effective to the protection of chip, is conducive to prolong the useful life of product.The method for packing that adopts the embodiment of the invention to provide is being protected the LED encapsulating structure that has obtained light extraction efficiency height and the anti-UV function admirable of heatproof in the injury-free situation of led chip.
Embodiment two:
Fig. 2 and Fig. 3 show the plan structure schematic diagram of the board structure that second embodiment of the invention provides, Fig. 4 shows the cross-sectional view of the board structure that second embodiment of the invention provides, for convenience of explanation, only show the part relevant with the embodiment of the invention.
In embodiments of the present invention, led chip 2 is fixed on the substrate 1 and can realizes by following method: the groove 6 that is provided with draw-in groove 7 at substrate 1, the size and shape of the size and shape of groove 6 and led chip 2 adapts, be used for placing led chip 2, groove 6 inwalls are provided with alloy-layer 3, when led chip 2 placed groove 6, alloy-layer 3 was in contact with one another with led chip 2.Draw-in groove 7 is positioned at the edge of groove 6, the cross-section structure of the two is similar to stairstepping (as shown in Figure 4), the outward flange shape of draw-in groove 7 can be circular, rectangle, or other rules or irregularly shaped, the effect of draw-in groove is: when led chip 2 places groove 6, get elastic buckle 8 and fill in the draw-in groove 7, utilize the pressure between buckle 8 and the led chip 2 to fix led chip 2 (as shown in Figure 5).The structure that is appreciated that draw-in groove 7 has multiple, can also be the separate groove of offering in certain or a plurality of position at groove 6 edges, and its particular location and structure are as the criterion with the effect that can play fixed L ED chip.
Embodiment three:
Fig. 6 and Fig. 7 show cross-sectional view and the plan structure schematic diagram of the lead frame structure that third embodiment of the invention provides, and for convenience of explanation, only show the part relevant with the embodiment of the invention.
In embodiments of the present invention, an electrode tip of lead frame 4 is arranged on substrate 1 upper surface, is electrically connected with led chip 2 by bonding line 9; Another electrode tip of lead frame 4 stretches into groove 6 bottoms, by contact the electrical connection that realizes the two with led chip 2 bottoms.The material of lead frame 4 is silver preferably.
Embodiment four:
Fig. 8 shows the glass package structure schematic diagram that fourth embodiment of the invention provides, and for convenience of explanation, only shows the part relevant with the embodiment of the invention.
In embodiments of the present invention, adopt melten glass packaging LED chips 2 to realize by following method: to get a mould and cover on led chip 2 tops, this mould is determined according to the structure of the glass packaging layer that will obtain, then, in mould, pour into a mould melten glass, at the led chip 2 outside glass packaging layers 5 that form.Also can by other means melten glass be encapsulated in the outside of led chip 2.
As shown in Figure 9, roughening treatment is carried out in the outside of glass packaging layer 5, the luminous flux of its outgoing can further improve, and bright dipping is more even.
Embodiment five:
For the damage to led chip 2 of the high temperature that further reduces melten glass, the preferred low temperature glass of the glass that adopts in the embodiment of the invention, its fusion temperature is 300 ℃～1200 ℃.The fusing point of the alloy material that adopts is preferably 260 ℃～320 ℃, the preferred golden tin of alloy material (Au/Sn) alloy.
Embodiment six:
In embodiments of the present invention, in order to be more conducive to led chip 2 heat radiations, increase the service life substrate 1 preferably ceramic substrate.The main component of pottery can be aluminium oxide or aluminium nitride.
Embodiment seven:
Fig. 8 shows the LED encapsulating structure schematic diagram that seventh embodiment of the invention provides, and for convenience of explanation, only shows the part relevant with the embodiment of the invention.
This LED encapsulating structure comprises substrate 1, is fixed in the lead frame 4 on the substrate 1, and the led chip 2 that is electrically connected with lead frame 4, is packaged in the glass packaging layer 5 of led chip 2 outsides, bonds by alloy-layer 3 between led chip 2 and the substrate 1.
Refractive index and the light transmittance of glass are higher, and reliability is good, and wet oxygen transmission rate is low thoroughly; protection to led chip is effective, is splendid encapsulating material, therefore; the light extraction efficiency of the LED product of employing glass packaging is high, high temperature resistant, the function admirable of anti-UV, and longer service life.
Embodiment eight:
In embodiments of the present invention, substrate 1 is provided with the groove 6 with draw-in groove 7, and the size and shape of the size and shape of groove 6 and led chip 2 adapts, and is used for placing led chip 2, bonds by alloy-layer 3 between led chip 2 and the groove 6.Draw-in groove 7 is positioned at the edge of groove 6, the cross-section structure of the two is similar to stairstepping (as shown in Figure 4), the outward flange shape of draw-in groove 7 can be circular, rectangle, or other rules or irregularly shaped, draw-in groove 7 was used for before packaged glass fixed L ED chip 2 is fixing, draw-in groove inside is plugged with is with flexible buckle 8, utilizes the pressure between buckle 8 and the led chip 2 to fix led chip 2 (as shown in Figure 5).Be appreciated that buckle 8 does not belong to the part of substrate, but plug member independently.Draw-in groove 7 can also be the separate groove of offering in certain of groove 6 edges or a plurality of position.
Embodiment nine:
In embodiments of the present invention, glass packaging layer 5 can be convex lens structures, also can be the planar lens structure.Because convex lens structures can further reduce all reflective light, more is conducive to bright dipping, therefore preferred convex lens structures.
Embodiment ten:
In embodiments of the present invention, can do roughening treatment to the outside of glass packaging layer 5, the luminous flux of outgoing is further improved, and bright dipping be more even, as shown in Figure 9, this alligatoring structure 51 can be the sawtooth pattern structure.
Embodiment 11:
In embodiments of the present invention, the fusion temperature of the glass of glass packaging layer 5 employing is 300 ℃～1200 ℃.
Embodiment 12:
In embodiments of the present invention, the fusing point of alloy-layer material is preferably 260 ℃～320 ℃.The preferred Au/Sn alloy of alloy material.
The embodiment of the invention adopts glass packaging LED, and the light transmittance of glass and reliability are all higher, and glass packaging LED can obtain the LED product of high light-emitting efficiency, high temperature resistant, anti-UV function admirable; And the oxygen flow rate of perviousness of glass is lower, and has good heat conductivility, to the protection better effects if of chip; Most of heat that alloy absorbs melten glass melts rapidly, the bonding chip forms eutectic, has avoided the high temperature of glass in the encapsulation process to the damage of led chip.Adopt the lower glass of fusion temperature to encapsulate, can further reduce high temperature to the damage of chip; Glass packaging is in the three-dimensional heat radiating structure led chip, is conducive to reduce working temperature, thereby promotes the luminous efficiency of LED; Glass is inorganic matter, and other encapsulating materials (such as epoxy resin, silica gel etc.) are more stable relatively; The glass packaging layer is set to convex lens structures, and effects on surface carries out roughening treatment, more is conducive to bright dipping, and then improves the light extraction efficiency of product.
The part of the multiplex LED of the work lamp of LED encapsulating structure that the embodiment of the invention provides.This LED lamp can be used as lighting apparatus, also can be used as independent light fixture and places lighting apparatus.
The above only is preferred embodiment of the present invention, not in order to limiting the present invention, all any modifications of doing within the spirit and principles in the present invention, is equal to and replaces and improvement etc., all should be included within protection scope of the present invention.
Claims (9)
1. a LED method for packing is characterized in that, described method comprises the steps:
Led chip is fixed on the substrate; Described led chip is electrically connected with lead frame on being fixed on described substrate;
Adopt melten glass to encapsulate described led chip, form the glass packaging layer, the described alloy-layer of the heat melts of described melten glass, the bonding formation eutectic of the alloy-layer after the fusing and described led chip;
The described step that led chip is fixed on the substrate is specially:
At described substrate groove is set, and in described recess edge draw-in groove is set;
The inwall of described groove is provided with alloy-layer;
Described led chip is placed described groove, and described led chip is contacted with described alloy-layer;
The card taking button is filled in the described draw-in groove, described buckle and described led chip is pushed mutually, with fixed L ED chip.
2. the method for claim 1 is characterized in that, described employing melten glass encapsulates described led chip, and the step that forms the glass packaging layer is specially:
Get a mould and cover in described led chip outside;
The described melten glass of casting forms described glass packaging layer in the described mould.
3. method as claimed in claim 1 or 2 is characterized in that, described glass packaging layer is convex lens structures.
4. the method for claim 1 is characterized in that, the temperature of described melten glass is 300 ℃～1200 ℃.
5. LED encapsulating structure, comprise substrate, be fixed on the lead frame on the described substrate, and the led chip that is electrically connected with described lead frame, it is characterized in that described LED encapsulating structure also comprises the glass packaging layer that is packaged in described led chip outside; Described substrate is provided with groove,
Described recess edge is provided with draw-in groove;
The inwall of described groove is provided with alloy-layer;
Described led chip places described groove, and mutually bonding with described alloy-layer;
Be provided with elastic buckle in the described draw-in groove, described led chip is pushed by described buckle and is fixed in the described groove.
6. LED encapsulating structure as claimed in claim 5 is characterized in that, described glass packaging layer is convex lens structures.
7. LED encapsulating structure as claimed in claim 5 is characterized in that, described glass packaging layer outside is provided with the alligatoring structure.
8. a LED lamp is characterized in that, described LED lamp comprises each described LED encapsulating structure of claim 5 to 7.
9. a lighting apparatus is characterized in that, described lighting apparatus comprises LED lamp claimed in claim 8.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010102293935A CN101980392B (en) | 2010-07-16 | 2010-07-16 | Light-emitting diode (LED) packaging method, LED packaging structure, LED lamp and lighting equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010102293935A CN101980392B (en) | 2010-07-16 | 2010-07-16 | Light-emitting diode (LED) packaging method, LED packaging structure, LED lamp and lighting equipment |
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| CN101980392A CN101980392A (en) | 2011-02-23 |
| CN101980392B true CN101980392B (en) | 2013-10-23 |
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Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102709455B (en) * | 2011-03-28 | 2017-07-07 | 赛恩倍吉科技顾问（深圳）有限公司 | Flip chip package structure of LED and its manufacture method |
| US8618675B2 (en) * | 2011-10-26 | 2013-12-31 | Continental Automotive Systems, Inc. | Thin semiconductor die package |
| CN104638091B (en) * | 2014-12-18 | 2017-10-24 | 上海大学 | LED glass substrates |
| CN117915043B (en) * | 2023-12-26 | 2025-03-21 | 华中农业大学 | Four-wheel hub motor driven chicken house inspection system and equipment based on domestic FPGA |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1759492A (en) * | 2003-03-10 | 2006-04-12 | 丰田合成株式会社 | Solid element device and method for manufacture thereof |
| CN101222004A (en) * | 2007-01-12 | 2008-07-16 | 扬升照明股份有限公司 | Light emitting diode packaging structure and manufacturing method thereof |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4263051B2 (en) * | 2003-07-31 | 2009-05-13 | 俊信 横尾 | Light emitting diode |
| JP2006351333A (en) * | 2005-06-15 | 2006-12-28 | Koito Mfg Co Ltd | Light source module and vehicle lamp |
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Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1759492A (en) * | 2003-03-10 | 2006-04-12 | 丰田合成株式会社 | Solid element device and method for manufacture thereof |
| CN101222004A (en) * | 2007-01-12 | 2008-07-16 | 扬升照明股份有限公司 | Light emitting diode packaging structure and manufacturing method thereof |
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