CN105390592A - Three-layer packaging method for ultraviolet LED light source - Google Patents
Three-layer packaging method for ultraviolet LED light source Download PDFInfo
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- 238000000034 method Methods 0.000 title claims abstract description 34
- 238000004806 packaging method and process Methods 0.000 title claims abstract description 26
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 59
- 239000000741 silica gel Substances 0.000 claims abstract description 42
- 229910002027 silica gel Inorganic materials 0.000 claims abstract description 42
- 239000000758 substrate Substances 0.000 claims abstract description 14
- 239000010453 quartz Substances 0.000 claims abstract description 13
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims abstract description 10
- 238000005538 encapsulation Methods 0.000 claims description 5
- 239000010931 gold Substances 0.000 claims description 4
- 229910052737 gold Inorganic materials 0.000 claims description 4
- 239000011248 coating agent Substances 0.000 claims description 2
- 238000000576 coating method Methods 0.000 claims description 2
- 238000004382 potting Methods 0.000 claims description 2
- 239000007787 solid Substances 0.000 claims description 2
- 239000003822 epoxy resin Substances 0.000 description 10
- 229920000647 polyepoxide Polymers 0.000 description 10
- 238000013461 design Methods 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 238000005457 optimization Methods 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 230000003247 decreasing effect Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 239000003292 glue Substances 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 239000005022 packaging material Substances 0.000 description 3
- 229920002050 silicone resin Polymers 0.000 description 3
- 230000032683 aging Effects 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 238000000605 extraction Methods 0.000 description 2
- 238000012536 packaging technology Methods 0.000 description 2
- 230000004224 protection Effects 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- 238000002834 transmittance Methods 0.000 description 2
- 229910002808 Si–O–Si Inorganic materials 0.000 description 1
- 230000006750 UV protection Effects 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000011265 semifinished product Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/852—Encapsulations
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/852—Encapsulations
- H10H20/854—Encapsulations characterised by their material, e.g. epoxy or silicone resins
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/855—Optical field-shaping means, e.g. lenses
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
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Abstract
本发明公开了一种紫外LED光源三层封装方法，包括以下步骤：步骤一、提供含有印刷电路层的基板；步骤二、将紫外LED芯片固定在基板上；步骤三、采用金线将紫外LED芯片与基板电极连接；步骤四、将第一硅胶包覆在紫外LED芯片和金线上；步骤五、将第二硅胶灌封在第一硅胶上，所述第二硅胶的折射率小于第一硅胶的折射率；步骤六、将石英透镜设置在第二硅胶上，所述石英透镜的折射率小于第二硅胶的折射率；步骤七、烘烤得到紫外LED光源。采用本方法可以有效的增加出光率，并降低光衰。
The invention discloses a three-layer packaging method for an ultraviolet LED light source, which comprises the following steps: step 1, providing a substrate containing a printed circuit layer; step 2, fixing an ultraviolet LED chip on the substrate; step 3, using a gold wire to seal the ultraviolet LED The chip is connected to the substrate electrode; Step 4, the first silica gel is coated on the ultraviolet LED chip and the gold wire; Step 5, the second silica gel is potted on the first silica gel, and the refractive index of the second silica gel is smaller than that of the first silica gel. Refractive index of silica gel; step 6, setting the quartz lens on the second silica gel, the refractive index of the quartz lens is lower than that of the second silica gel; step 7, baking to obtain the ultraviolet LED light source. By adopting the method, the light output rate can be effectively increased, and the light decay can be reduced.
Description
技术领域 technical field
本发明涉及LED封装方法技术领域，特别是一种紫外LED光源三层封装方法。 The invention relates to the technical field of LED packaging methods, in particular to a three-layer packaging method for an ultraviolet LED light source.
背景技术 Background technique
半导体照明作为新一代的照明技术，具有很多优点：节能、环保、长寿命、响应快等，近年来发展非常迅速。 As a new generation of lighting technology, semiconductor lighting has many advantages: energy saving, environmental protection, long life, fast response, etc. It has developed very rapidly in recent years.
紫外LED具体积小、寿命长和效率高等优点,具有广泛的应用前景。目前，紫外LED的发光功率较低,除了芯片制作水平的提高外,封装技术对LED的特性也有重要的影响。目前,紫外LED主要有环氧树脂封装和金属与玻璃透镜封装。前者主要应用于400nm左右的近紫外LED,但紫外光对材料的老化影响较大。后者主要应用于波长小于380nm的紫外LED,由于GaN和蓝宝石折射率分别为2.4和1.76,而气体折射率为1,较大的折射率差导致全反射对光的限制较为严重,封装材料是LED封装技术的另一个重要方面。LED封装材料主要有玻璃透镜、环氧树脂和硅树脂等。石英玻璃软化点温度为1600℃,热加工温度为1700～2000℃,从工艺的角度,石英玻璃不适合用来密封LED芯片;环氧树脂高温耐热性能一般,耐紫外光性能较差出光效率低。 Ultraviolet LEDs have the advantages of small size, long life and high efficiency, and have broad application prospects. At present, the luminous power of ultraviolet LED is low. In addition to the improvement of chip manufacturing level, packaging technology also has an important impact on the characteristics of LED. At present, ultraviolet LED mainly has epoxy resin encapsulation and metal and glass lens encapsulation. The former is mainly used in near-ultraviolet LEDs around 400nm, but ultraviolet light has a greater impact on the aging of materials. The latter is mainly used in ultraviolet LEDs with a wavelength of less than 380nm. Since the refractive index of GaN and sapphire are 2.4 and 1.76 respectively, while the refractive index of gas is 1, the large refractive index difference leads to serious restrictions on light by total reflection. The packaging material is Another important aspect of LED packaging technology. LED packaging materials mainly include glass lens, epoxy resin and silicone resin. The softening point temperature of quartz glass is 1600°C, and the thermal processing temperature is 1700-2000°C. From the perspective of technology, quartz glass is not suitable for sealing LED chips; epoxy resin has general high-temperature heat resistance and poor ultraviolet light resistance. Low.
发明内容 Contents of the invention
本发明所要解决的技术问题是克服现有技术的不足而提供一种紫外LED光源三层封装方法，采用本方法可以有效的增加出光率，并降低光衰。 The technical problem to be solved by the present invention is to overcome the deficiencies of the prior art and provide a three-layer packaging method for an ultraviolet LED light source. The method can effectively increase the light output rate and reduce light decay.
本发明为解决上述技术问题采用以下技术方案： The present invention adopts the following technical solutions for solving the problems of the technologies described above:
根据本发明提出的一种紫外LED光源三层封装方法，包括以下步骤: A kind of three-layer encapsulation method of ultraviolet LED light source proposed according to the present invention, comprises the following steps:
步骤一、提供含有印刷电路层的基板； Step 1, providing a substrate containing a printed circuit layer;
步骤二、将紫外LED芯片固定在基板上； Step 2, fixing the ultraviolet LED chip on the substrate;
步骤三、采用金线将紫外LED芯片与基板电极连接； Step 3, using gold wires to connect the ultraviolet LED chip to the substrate electrode;
步骤四、将第一硅胶包覆在紫外LED芯片和金线上； Step 4, coating the first silica gel on the UV LED chip and the gold wire;
步骤五、将第二硅胶灌封在第一硅胶上，所述第二硅胶的折射率小于第一硅胶的折射率； Step 5, potting the second silica gel on the first silica gel, the refractive index of the second silica gel is smaller than that of the first silica gel;
步骤六、将石英透镜设置在第二硅胶上，所述石英透镜的折射率小于第二硅胶的折射率； Step 6, disposing the quartz lens on the second silica gel, the refractive index of the quartz lens is smaller than that of the second silica gel;
步骤七、烘烤得到紫外LED光源。 Step 7: Baking to obtain an ultraviolet LED light source.
作为本发明所述的一种紫外LED光源三层封装方法进一步优化方案，所述第一硅胶的折射率为1.53。 As a further optimization scheme of a three-layer packaging method for an ultraviolet LED light source according to the present invention, the refractive index of the first silica gel is 1.53.
作为本发明所述的一种紫外LED光源三层封装方法进一步优化方案，所述第二硅胶的折射率为1.51。 As a further optimization scheme of a three-layer packaging method for an ultraviolet LED light source according to the present invention, the refractive index of the second silica gel is 1.51.
作为本发明所述的一种紫外LED光源三层封装方法进一步优化方案，所述石英透镜的折射率为1.46。 As a further optimization scheme of a three-layer packaging method for an ultraviolet LED light source according to the present invention, the refractive index of the quartz lens is 1.46.
作为本发明所述的一种紫外LED光源三层封装方法进一步优化方案，所述石英透镜为实心。 As a further optimization scheme of a three-layer packaging method for an ultraviolet LED light source according to the present invention, the quartz lens is solid.
本发明采用以上技术方案与现有技术相比，具有以下技术效果： Compared with the prior art, the present invention adopts the above technical scheme and has the following technical effects:
（1）本发明与传统的封装方法相比，本发明提供的紫外LED三层封装设计方法，出光效率提高约60%； (1) Compared with the traditional packaging method, the three-layer packaging design method of ultraviolet LED provided by the present invention can increase the light extraction efficiency by about 60%;
（2）老化试验表明，传统封装使用环氧树脂封装，紫外LED的发光功率在100小时内衰减到50%以下，而本发明提供的紫外LED三层封装设计方法，连续工作800小时后发光功率依然维持在95%以上，发光功率衰减低于5%。 (2) The aging test shows that the traditional packaging uses epoxy resin packaging, and the luminous power of the ultraviolet LED decays to less than 50% within 100 hours. However, the luminous power of the ultraviolet LED three-layer packaging design method provided by the present invention can be reduced after 800 hours of continuous operation. It is still maintained above 95%, and the luminous power attenuation is less than 5%.
附图说明 Description of drawings
图1是包含环氧树脂的传统封装方法COB（Chiponboard）光源结构示意图。 Figure 1 is a schematic diagram of the structure of a traditional packaging method COB (Chiponboard) light source containing epoxy resin.
图2是传统封装方法COB（Chiponboard）光源结构示意图。 Figure 2 is a schematic diagram of the traditional packaging method COB (Chiponboard) light source structure.
图3是本发明所述方法紫外LED光源三层封装设计结构图。 Fig. 3 is a three-layer package design structure diagram of an ultraviolet LED light source according to the method of the present invention.
图中的附图标记解释为：1-石英透镜，2-基板，3-紫外LED芯片，4-环氧树脂，5-第一硅胶，6-第二硅胶。 The reference signs in the figure are explained as: 1-quartz lens, 2-substrate, 3-ultraviolet LED chip, 4-epoxy resin, 5-first silica gel, 6-second silica gel.
具体实施方式 detailed description
下面结合附图对本发明的技术方案做进一步的详细说明： Below in conjunction with accompanying drawing, technical scheme of the present invention is described in further detail:
一种紫外LED光源三层封装设计方法，包含以下步骤： A three-layer packaging design method for an ultraviolet LED light source, comprising the following steps:
1、将紫外LED芯片3固定在含有印刷电路层的基板2上； 1. Fixing the ultraviolet LED chip 3 on the substrate 2 containing the printed circuit layer;
2、使用金线将紫外LED芯片3正负极分别于印刷电路层正负极连接； 2. Use gold wires to connect the positive and negative poles of the ultraviolet LED chip 3 to the positive and negative poles of the printed circuit layer;
3、使用点胶机将调配好比例的折射率为1.53的第一硅胶5点在LED芯片上，仅包覆住紫外LED芯片3及金线； 3. Use a dispensing machine to place 5 dots of the first silica gel with a refractive index of 1.53 on the LED chip, covering only the ultraviolet LED chip 3 and the gold wire;
4、使用点胶机将调配好比例的折射率为1.51的第二硅胶6灌粉在LED内部； 4. Use a dispensing machine to fill the prepared second silica gel 6 with a refractive index of 1.51 inside the LED;
5、将折射率为1.46的石英透镜1放置在LED上部并卡住； 5. Place the quartz lens 1 with a refractive index of 1.46 on the upper part of the LED and fix it;
6、将半成品送入烤箱烘烤； 6. Send the semi-finished product to the oven for baking;
本发明的原理是，硅树脂比环氧树脂具备更强的抗热和抗紫外光能力，并且使用从内到外逐步递减折射率的方式，可以使内部出光的全反射率降低，即增加了出光率，又降低了在LED的光衰； The principle of the present invention is that silicone resin has stronger heat resistance and ultraviolet light resistance than epoxy resin, and the method of gradually decreasing the refractive index from the inside to the outside can reduce the total reflectance of the internal light, that is, increase the The light output rate also reduces the light decay of the LED;
硅胶的主要结构包括Si和2O，主链Si-O-Si是无机的，而且具有较高的键能(422.5kJ/mol)；而环氧树脂的主链主要是C-C或C-O,键能分别为356kJ/mol和344.4kJ/mol。由于键能较高,硅胶的性能相对要稳定。因此,硅胶具有良好的耐紫外光特性。 The main structure of silica gel includes Si and 2O, the main chain Si-O-Si is inorganic, and has a high bond energy (422.5kJ/mol); while the main chain of epoxy resin is mainly C-C or C-O, the bond energy is respectively It is 356kJ/mol and 344.4kJ/mol. Due to the high bond energy, the performance of silica gel is relatively stable. Therefore, silica gel has good UV resistance properties.
上述的步骤中，封装结构共有3层。可以使用常规的固晶焊线工艺，上述的材料均可以采用折射率相同的常规材料； In the above steps, the encapsulation structure has three layers in total. The conventional die-bonding wire process can be used, and the above-mentioned materials can all use conventional materials with the same refractive index;
上述的步骤3中，里层采用第一硅胶进行密封,因为第一硅胶的折射率为1.53，GAN和蓝宝石衬底的折射率分别为2.4和1.76，使用高折射率胶水拉近了与芯片折射率的差，有利于充分提高LED的提取效率，并且固化后为弹性硅胶,较低的机械强度有利于保护芯片和电极引线； In the above step 3, the inner layer is sealed with the first silica gel, because the refractive index of the first silica gel is 1.53, the refractive index of GAN and the sapphire substrate are 2.4 and 1.76 respectively, and the high refractive index glue is used to shorten the refractive index of the chip The difference in efficiency is conducive to fully improving the extraction efficiency of LEDs, and after curing, it becomes elastic silica gel, and the lower mechanical strength is conducive to protecting chips and electrode leads;
上述的步骤4中，灌粉是第二硅胶，作为石英玻璃透镜和第一硅胶层间的过渡层，第二硅胶折射率为1.51，与第一硅胶的折射率1.53接近，故透光性很好，全反射率低，并且与硅胶固化后硬度大、粘接性强，能很好地固定玻璃透镜； In the above step 4, the filling powder is the second silica gel, which is used as a transition layer between the quartz glass lens and the first silica gel layer. The second silica gel has a refractive index of 1.51, which is close to the first silica gel’s refractive index of 1.53, so the light transmission is very good. Good, the total reflectance is low, and after curing with silica gel, it has high hardness and strong adhesion, and can fix the glass lens well;
上述的步骤5中，外层是高透过率石英玻璃透镜,，折射率为1.46，用于光的导出，并形成一定的光场分布,其极高的紫外光透过率减少了光在激射过程中的损失。 In the above step 5, the outer layer is a high-transmittance quartz glass lens with a refractive index of 1.46, which is used for light export and forms a certain light field distribution. Its extremely high ultraviolet light transmittance reduces the light in the Loss during lasing.
在整个结构中,为了尽可能减少硅树脂对紫外光的吸收损耗,树脂层厚度都较薄。同时,折射率逐层递减的3层结构有利于减少光在传播过程中的菲涅尔损耗。 In the whole structure, in order to reduce the absorption loss of ultraviolet light by the silicone resin as much as possible, the thickness of the resin layer is relatively thin. At the same time, the three-layer structure with decreasing refractive index layer by layer is beneficial to reduce the Fresnel loss in the process of light propagation.
图1是包含环氧树脂的传统封装方法COB（Chiponboard）光源结构示意图。图1中的4是环氧树脂。 Figure 1 is a schematic diagram of the structure of a traditional packaging method COB (Chiponboard) light source containing epoxy resin. 4 in Figure 1 is epoxy resin.
图2是传统封装方法COB（Chiponboard）光源结构示意图。 Figure 2 is a schematic diagram of the traditional packaging method COB (Chiponboard) light source structure.
实施例1 Example 1
本发明所提供的紫外LED光源三层封装设计方法，基本工艺中的固晶，焊线，点胶等工艺，固晶焊线与传统封装方法的工艺相同，包括： The three-layer packaging design method of the ultraviolet LED light source provided by the present invention includes the processes of die bonding, wire bonding, and glue dispensing in the basic process.
固晶：如图3所示，将紫外LED芯片3固定到基板2上； Die bonding: as shown in Figure 3, fix the UV LED chip 3 on the substrate 2;
焊线：如图3所示，将紫外LED芯片使用金线与基板的电路连接； Wire bonding: As shown in Figure 3, connect the UV LED chip to the circuit of the substrate using gold wires;
点胶：如图3所示，将配置好的第一硅胶5点到紫外LED芯片3的周围，仅需包覆住芯片和金线；之后再如图3所示，将配置好的第二硅胶6点到LED内部；然后将石英透镜1盖到LED上部卡住， Glue dispensing: as shown in Figure 3, place the configured first silica gel 5 around the UV LED chip 3, only need to cover the chip and gold wire; then as shown in Figure 3, place the configured second Silicone 6 points to the inside of the LED; then cover the quartz lens 1 to the upper part of the LED,
烘烤：完成上述步骤后放入烤箱烘烤即可。 Baking: After completing the above steps, put it in the oven to bake.
本发明增加了紫外LED出光效率及减少光衰；从内到外依次使用递减折射率的封装材料，降低了出光的全反射率，增加LED出光效率。 The invention increases the light output efficiency of the ultraviolet LED and reduces the light attenuation; sequentially uses packaging materials with decreasing refractive index from the inside to the outside, reduces the total reflectance of the light output, and increases the light output efficiency of the LED.
本发明实施例紫外LED光源三层封装设计方法与常规紫外LED封装的数据对比如下表1所示： The data comparison between the three-layer packaging design method of the ultraviolet LED light source of the embodiment of the present invention and the conventional ultraviolet LED packaging is shown in Table 1 below:
表1 Table 1
以上数据均为常温常压下，使用20mA电流持续点亮，点亮一定时间后进行测试得出。 The above data are all tested under normal temperature and pressure, using 20mA current to continuously light up, and after a certain period of time to light up.
以上所述的具体实施方案，对本发明的目的、技术方案和有益效果进行了进一步的详细说明，所应理解的是，以上所述仅为本发明的具体实施方案而已，并非用以限定本发明的范围，任何本领域的技术人员，在不脱离本发明的构思和原则的前提下所做出的等同变化与修改，均应属于本发明保护的范围。 The specific embodiments described above have further described the purpose, technical solutions and beneficial effects of the present invention in detail. It should be understood that the above descriptions are only specific embodiments of the present invention, and are not intended to limit the present invention. Any equivalent changes and modifications made by those skilled in the art without departing from the concepts and principles of the present invention shall fall within the protection scope of the present invention.
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