CN101977039B - Congestion control based monostable circuit - Google Patents
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Abstract
本发明涉及一种基于阻塞控制的单稳态电路,第一PMOS晶体管P1的源极连接电源电压,其漏极与第二PMOS晶体管P2的源极相连,其栅极受控于输入电压;第二PMOS晶体管P2的栅极受控于反相器I2输出端的信号,其漏极与传输门T1输出端、反相器I1的输入端及电容N1的一端相连;电容N1的另一端接地;反相器I1的输出端与所述传输门T2的输入端相连;传输门T2的输出端与反相器I2的输入端相连;反相器I2的输出端与所述反相器I3的输入端相连;反相器I3的输出端是所述单稳态电路的输出端VOUT,并且该输出端被反馈连接至所述传输门T1的输入端;两个传输门分别受控于两个传输门控制端的输入信号,使得在同一时间只有一个传输门导通以实现阻塞控制。
The present invention relates to a monostable circuit based on blocking control, the source of the first PMOS transistor P1 is connected to the power supply voltage, the drain is connected to the source of the second PMOS transistor P2, and the gate is controlled by the input voltage; The gate of the two PMOS transistor P2 is controlled by the signal at the output terminal of the inverter I2, and its drain is connected with the output terminal of the transmission gate T1, the input terminal of the inverter I1 and one end of the capacitor N1; the other end of the capacitor N1 is grounded; The output end of the phaser I1 is connected with the input end of the transmission gate T2; the output end of the transmission gate T2 is connected with the input end of the inverter I2; the output end of the inverter I2 is connected with the input end of the inverter I3 The output terminal of the inverter I3 is the output terminal VOUT of the monostable circuit, and this output terminal is connected to the input terminal of the transmission gate T1 by feedback; the two transmission gates are respectively controlled by the two transmission gates The input signal of the control terminal makes only one transmission gate conduction at the same time to realize blocking control.
Description
技术领域 technical field
本发明涉及单稳态电路,特别涉及一种基于阻塞控制的单稳态电路。The invention relates to a monostable circuit, in particular to a monostable circuit based on blocking control.
背景技术 Background technique
单稳态电路只有一个稳定状态。在外界触发脉冲的作用下,电路从稳态翻转到暂态,在暂态维持一段时间之后,又返回稳态,并在输出端产生一个矩形脉冲。A monostable circuit has only one stable state. Under the action of an external trigger pulse, the circuit turns from a steady state to a transient state. After the transient state is maintained for a period of time, it returns to a steady state and generates a rectangular pulse at the output.
由于单稳态电路的暂态时间是电路内部参数确定的,因此单稳态触发器被广泛用于脉冲整形、延时以及定时等。单稳态触发器的暂稳态通常是靠RC电路的充、放电过程来维持的,RC电路可接成两种形式:微分和积分电路形式。Since the transient time of the monostable circuit is determined by the internal parameters of the circuit, the monostable flip-flop is widely used in pulse shaping, delay and timing. The transient state of the monostable trigger is usually maintained by the charging and discharging process of the RC circuit. The RC circuit can be connected into two forms: differential and integral circuit forms.
传统的单稳态电路主要有积分型和微分型两种结构。积分型单稳态触发器电路原理图,如图1所示,传统积分型单稳态电路在Vi从低电平变到高电平时,经过反相器G1后,V01输出由高电平变到低电平,输出电压V0由高变低,此时电容C通过R开始放电,VA降低,当VA低于G2的阈值电压后V0从低变到高,恢复到稳态。而此过程中的低电平脉冲宽度是由电路中RC常数决定的。通过调整RC常数可以得到不同脉冲宽度的信号。微分型单稳态触发器电路原理图,如图2所示,微分型的电路工作原理同积分型的类似,只不过在控制稳态时间的机制上不同。一般来说单稳态电路中暂态时间都与电路中RC参数大小决定。Traditional monostable circuits mainly have two structures: integral type and differential type. The schematic diagram of the integral monostable flip-flop circuit is shown in Figure 1. When V i changes from low level to high level in the traditional integral monostable circuit, after passing through the inverter G1, the output of V 01 is switched from high level to high level. When V A is lower than the threshold voltage of G2, V 0 changes from low to high and returns to a steady state. state. The low-level pulse width in this process is determined by the RC constant in the circuit. Signals with different pulse widths can be obtained by adjusting the RC constant. The schematic diagram of the differential type monostable flip-flop circuit is shown in Figure 2. The working principle of the differential type monostable flip-flop is similar to that of the integral type, except that the mechanism for controlling the steady state time is different. Generally speaking, the transient time in a monostable circuit is determined by the size of the RC parameter in the circuit.
但是,不论积分型还是微分型的单稳态电路结构,如果要产生一个较长的暂态时间,电路中RC的值则也会变大。如果要将该单稳态电路集成与芯片内部的话,由于电阻电容的影响,将会占用很多芯片的面积,非常不利于集成设计。尤其是微分型单稳态电路,其中使用了较多的电阻电容器件。另外,一旦应用要求确定,RC参数的大小同时也确定,不可更改,重复利用率差。最后,即使RC值较小,能够集成到整个系统用于产生特点的脉冲波形,而该电路的瞬态时间也将由于RC在不同工艺下的剧烈变化,产生50%左右的误差,这对于需要精确控制时间的应用环境极为不利。However, regardless of the monostable circuit structure of the integral type or the differential type, if a longer transient time is to be generated, the value of RC in the circuit will also become larger. If the monostable circuit is to be integrated into the chip, due to the influence of resistors and capacitors, it will occupy a lot of chip area, which is very unfavorable for integrated design. Especially the differential monostable circuit, which uses more resistive and capacitive devices. In addition, once the application requirements are determined, the size of the RC parameters is also determined at the same time, which cannot be changed, and the reuse rate is poor. Finally, even if the RC value is small, it can be integrated into the entire system to generate characteristic pulse waveforms, and the transient time of the circuit will have an error of about 50% due to the drastic change of RC in different processes. The application environment with precise control of time is extremely unfavorable.
发明内容 Contents of the invention
本发明的目的在于,解决现有单稳态电路的缺点,设计一种便于系统集成,而且能够精确产生和易于控制暂态时间的单稳态电路。The purpose of the present invention is to solve the disadvantages of the existing monostable circuit and design a monostable circuit which is convenient for system integration and can accurately generate and easily control the transient time.
为实现上述发明目的,本发明提出一种基于阻塞控制的单稳态电路,其特征在于,该单稳态电路包括:第一PMOS晶体管P1、第二PMOS晶体管P2、第一传输门T1、第二传输门T2、电容N1、第一反相器I1、第二反相器I2和第三反相器I3;In order to achieve the purpose of the above invention, the present invention proposes a monostable circuit based on blocking control, which is characterized in that the monostable circuit includes: a first PMOS transistor P1, a second PMOS transistor P2, a first transmission gate T1, a second Two transmission gates T2, a capacitor N1, a first inverter I1, a second inverter I2 and a third inverter I3;
所述第一PMOS晶体管P1的源极连接电源电压,其漏极与所述第二PMOS晶体管P2的源极相连,其栅极受控于输入电压;The source of the first PMOS transistor P1 is connected to the power supply voltage, its drain is connected to the source of the second PMOS transistor P2, and its gate is controlled by the input voltage;
所述第二PMOS晶体管P2的栅极受控于所述第二反相器I2输出端的信号,其漏极与所述第一传输门T1输出端、所述第一反相器I1的输入端及所述电容N1的一端相连;The gate of the second PMOS transistor P2 is controlled by the signal at the output end of the second inverter I2, and its drain is connected to the output end of the first transmission gate T1 and the input end of the first inverter I1 connected to one end of the capacitor N1;
所述电容N1的另一端接地;The other end of the capacitor N1 is grounded;
所述第一反相器I1的输出端与所述第二传输门T2的输入端相连;所述第二传输门T2的输出端与所述第二反相器I2的输入端相连;所述第二反相器I2的输出端与所述第三反相器I3的输入端相连;The output end of the first inverter I1 is connected to the input end of the second transmission gate T2; the output end of the second transmission gate T2 is connected to the input end of the second inverter I2; the The output end of the second inverter I2 is connected to the input end of the third inverter I3;
所述第三反相器I3的输出端是所述单稳态电路的输出端VOUT,并且该输出端被反馈连接至所述第一传输门T1的输入端;The output terminal of the third inverter I3 is the output terminal VOUT of the monostable circuit, and the output terminal is feedback-connected to the input terminal of the first transmission gate T1;
所述第一传输门T1和第二传输门T2分别受控于第一传输门T1和第二传输门T2控制端的输入信号,使得在同一时间只有一个传输门导通以实现阻塞控制。The first transmission gate T1 and the second transmission gate T2 are respectively controlled by the input signals of the control terminals of the first transmission gate T1 and the second transmission gate T2, so that only one transmission gate is turned on at the same time to realize blocking control.
所述电容N1是MOS电容,所述MOS电容的栅极与所述第一传输门T1的输出端、所述第一反相器I1的输入端及所述第二PMOS晶体管P2的漏极相连,所述MOS电容的源极和漏极相连并接地。The capacitor N1 is a MOS capacitor, the gate of the MOS capacitor is connected to the output terminal of the first transmission gate T1, the input terminal of the first inverter I1 and the drain of the second PMOS transistor P2 , the source and drain of the MOS capacitor are connected and grounded.
所述基于阻塞控制的单稳态电路中还包括一个第四反相器I4,所述第四反相器I4的输出端与所述第二反相器I2的输入端相连,所述第四反相器I4的输入端与所述第二反相器I2的输出端相连。The monostable circuit based on blocking control also includes a fourth inverter I4, the output end of the fourth inverter I4 is connected to the input end of the second inverter I2, and the fourth inverter I4 is connected to the input end of the second inverter I2. The input end of the inverter I4 is connected to the output end of the second inverter I2.
作为本发明的一种选择,所述第二传输门T2采用NMOS结构,所述基于阻塞控制的单稳态电路中还包括一个或非门和第五反相器I5,所述或非门的一个输入端与所述第二反相器I2的输入端连接,所述或非门的另一个输入端连接时钟信号CLK,所述或非门的输出为第一信号NCLK1,该信号与第五反相器I5输入端连接,所述第五反相器I5的输出为第二信号CLK1,所述第二信号CLK1作为所述第二传输门T2控制端的输入信号控制所述第二传输门T2。As an option of the present invention, the second transmission gate T2 adopts an NMOS structure, and the monostable circuit based on blocking control also includes a NOR gate and a fifth inverter I5, and the NOR gate One input terminal is connected with the input terminal of the second inverter I2, the other input terminal of the NOR gate is connected with the clock signal CLK, and the output of the NOR gate is the first signal NCLK1, which is connected with the fifth NCLK1. The input terminal of the inverter I5 is connected, the output of the fifth inverter I5 is the second signal CLK1, and the second signal CLK1 is used as the input signal of the control terminal of the second transmission gate T2 to control the second transmission gate T2 .
作为本发明的另一种选择,所述第二传输门T2采用CMOS结构,所述基于阻塞控制的单稳态电路中还包括一个或非门和第五反相器I5,所述或非门的一个输入端与所述第二反相器I2的输入端连接,所述或非门的另一个输入端连接时钟信号CLK,所述或非门的输出为第一信号NCLK1,该信号与第五反相器I5输入端连接,所述第五反相器I5的输出为第二信号CLK1,所述第一信号NCLK1和第二信号CLK1作为所述第二传输门T2控制端的输入信号控制所述第二传输门T2。As another option of the present invention, the second transmission gate T2 adopts a CMOS structure, and the monostable circuit based on blocking control also includes a NOR gate and a fifth inverter I5, and the NOR gate One input end of the NOR gate is connected to the input end of the second inverter I2, the other input end of the NOR gate is connected to the clock signal CLK, and the output of the NOR gate is the first signal NCLK1, which is related to the first signal NCLK1. The input terminals of the five inverters I5 are connected, the output of the fifth inverter I5 is the second signal CLK1, and the first signal NCLK1 and the second signal CLK1 are used as the input signal of the control terminal of the second transmission gate T2 to control the Describe the second transmission gate T2.
作为本发明的再一种选择,所述第二传输门T2采用PMOS结构,所述基于阻塞控制的单稳态电路中还包括一个或非门,所述或非门的一个输入端与所述第二反相器I2的输入端连接,所述或非门的另一个输入端连接时钟信号CLK,所述或非门的输出为第一信号NCLK1,所述第一信号NCLK1作为所述第二传输门T2控制端的输入信号控制第二传输门T2。As another option of the present invention, the second transmission gate T2 adopts a PMOS structure, and the monostable circuit based on blocking control further includes a NOR gate, and an input terminal of the NOR gate is connected to the The input end of the second inverter I2 is connected, the other input end of the NOR gate is connected to the clock signal CLK, the output of the NOR gate is the first signal NCLK1, and the first signal NCLK1 is used as the second The input signal at the control terminal of the transmission gate T2 controls the second transmission gate T2.
所述基于阻塞控制的单稳态电路中还包括一个第二NMOS晶体管N2和一个第六反相器I6,所述第六反相器I6的输入端与该单稳态电路的输出端VOUT相连,所述第六反相器I6的输出端与所述第二NMOS晶体管N2的栅极相连,所述第二NMOS晶体管N2的源极接地,所述第二NMOS晶体管N2的漏极与所述第一传输门T1的输入端相连。其中,The monostable circuit based on blocking control also includes a second NMOS transistor N2 and a sixth inverter I6, the input terminal of the sixth inverter I6 is connected to the output terminal VOUT of the monostable circuit , the output terminal of the sixth inverter I6 is connected to the gate of the second NMOS transistor N2, the source of the second NMOS transistor N2 is grounded, and the drain of the second NMOS transistor N2 is connected to the gate of the second NMOS transistor N2. The input terminals of the first transmission gate T1 are connected together. in,
当所述第一传输门T1是CMOS结构的传输门,第一传输门T1的PMOS管的栅极为一控制端,该控制端连接所述时钟信号CLK,第一传输门T1的NMOS管的栅极为另一控制端,该控制端连接时钟信号CLK的反向信号NCLK;When the first transmission gate T1 is a transmission gate of CMOS structure, the gate of the PMOS transistor of the first transmission gate T1 is a control terminal, and the control terminal is connected to the clock signal CLK, and the gate of the NMOS transistor of the first transmission gate T1 Extremely another control terminal, which is connected to the reverse signal NCLK of the clock signal CLK;
所述第二传输门T2是CMOS结构的传输门,第二传输门T2的PMOS管的栅极为一控制端,该控制端连接所述时钟信号的反向信号NCLK或所述或非门的输出的第一信号NCLK1,第二传输门T2的NMOS管的栅极为另一控制端,该控制端连接所述时钟信号CLK或所述反相器的输出的第二信号CLK1;或The second transmission gate T2 is a transmission gate of a CMOS structure, and the gate of the PMOS transistor of the second transmission gate T2 is a control terminal, which is connected to the inverse signal NCLK of the clock signal or the output of the NOR gate The gate of the NMOS transistor of the second transmission gate T2 is another control terminal, and the control terminal is connected to the clock signal CLK or the second signal CLK1 output by the inverter; or
所述第二传输门T2是PMOS结构的传输门,所述第二传输门T2的控制端连接所述时钟信号的反向信号NCLK或所述或非门的输出的第一信号NCLK1;或The second transmission gate T2 is a transmission gate with a PMOS structure, and the control terminal of the second transmission gate T2 is connected to the inverse signal NCLK of the clock signal or the first signal NCLK1 output by the NOR gate; or
所述第二传输门T2是NMOS结构的传输门,所述第二传输门T2的控制端连接所述时钟信号CLK或所述反相器的输出的第一信号CLK1。The second transmission gate T2 is a transmission gate of NMOS structure, and a control terminal of the second transmission gate T2 is connected to the clock signal CLK or the first signal CLK1 output by the inverter.
当所述第一传输门T1是PMOS结构的传输门,所述第一传输门T1的控制端连接所述时钟信号CLK;When the first transmission gate T1 is a transmission gate with a PMOS structure, the control terminal of the first transmission gate T1 is connected to the clock signal CLK;
所述第二传输门T2是CMOS结构的传输门,第二传输门T2的PMOS管的栅极为一控制端,该控制端连接时钟信号CLK的反向信号NCLK或所述或非门的输出的第一信号NCLK1,第二传输门T2中的NMOS管的栅极为另一控制端,该控制端连接所述时钟信号CLK或所述反相器的输出的第二信号CLK1;或The second transmission gate T2 is a transmission gate with a CMOS structure, and the gate of the PMOS transistor of the second transmission gate T2 is a control terminal, which is connected to the reverse signal NCLK of the clock signal CLK or the output of the NOR gate. The first signal NCLK1, the gate of the NMOS transistor in the second transmission gate T2 is another control terminal, and the control terminal is connected to the clock signal CLK or the second signal CLK1 output by the inverter; or
所述第二传输门T2是PMOS结构的传输门,所述传输门T2的控制端连接时钟信号CLK的反向信号NCLK或所述非门的输出的第一信号NCLK1;或The second transmission gate T2 is a transmission gate with a PMOS structure, and the control terminal of the transmission gate T2 is connected to the inverse signal NCLK of the clock signal CLK or the first signal NCLK1 output by the NOT gate; or
所述第二传输门T2是NMOS结构的传输门,所述第二传输门T2的控制端连接所述时钟信号CLK或所述反相器的输出的第二信号CLK1。The second transmission gate T2 is a transmission gate of NMOS structure, and the control terminal of the second transmission gate T2 is connected to the clock signal CLK or the second signal CLK1 output by the inverter.
当所述第一传输门T1是NMOS结构的传输门,所述第一传输门T1的控制端连接时钟信号CLK的反向信号NCLK;When the first transmission gate T1 is a transmission gate with an NMOS structure, the control terminal of the first transmission gate T1 is connected to the reverse signal NCLK of the clock signal CLK;
所述第二传输门T2是CMOS结构的传输门,第二传输门T2的PMOS管的栅极为一控制端,该控制端连接所述时钟信号的反向信号NCLK或所述或非门的输出的第一信号NCLK1,第二传输门T2的NMOS管的栅极为另一控制端,该控制端连接时钟信号CLK或所述反相器的输出的第二信号CLK1;或The second transmission gate T2 is a transmission gate of a CMOS structure, and the gate of the PMOS transistor of the second transmission gate T2 is a control terminal, which is connected to the inverse signal NCLK of the clock signal or the output of the NOR gate The gate of the NMOS transistor of the second transmission gate T2 is another control terminal, and the control terminal is connected to the clock signal CLK or the second signal CLK1 output by the inverter; or
所述第二传输门T2是PMOS结构的传输门,所述第二传输门T2的控制端连接所述时钟信号的反向信号NCLK或所述反相器的输出的第一信号NCLK1;或The second transmission gate T2 is a transmission gate with a PMOS structure, and the control terminal of the second transmission gate T2 is connected to the inverse signal NCLK of the clock signal or the first signal NCLK1 output by the inverter; or
所述第二传输门T2是NMOS结构的传输门,所述第二传输门T2的控制端连接所述时钟信号CLK或所述反相器的输出的第二信号CLK1。The second transmission gate T2 is a transmission gate of NMOS structure, and the control terminal of the second transmission gate T2 is connected to the clock signal CLK or the second signal CLK1 output by the inverter.
为实现上述发明目的,本发明还提出一种基于阻塞控制的单稳态电路,其特征在于,该单稳态电路包括:第一NMOS晶体管N1、第二NMOS晶体管N2、第一传输门T1、第二传输门T2、电容P1、第一反相器I1、第二反相器I2和第三反相器I3;To achieve the purpose of the above invention, the present invention also proposes a monostable circuit based on blocking control, which is characterized in that the monostable circuit includes: a first NMOS transistor N1, a second NMOS transistor N2, a first transmission gate T1, The second transmission gate T2, the capacitor P1, the first inverter I1, the second inverter I2 and the third inverter I3;
所述第二NMOS晶体管N2的源极接地,其漏极与所述第一NMOS晶体管N1的源极相连,其栅极受控于输入电压;The source of the second NMOS transistor N2 is grounded, its drain is connected to the source of the first NMOS transistor N1, and its gate is controlled by an input voltage;
所述第一NMOS晶体管N1的栅极受控于来自所述第二反相器I2的输出端的信号,反馈控制所述第二NMOS晶体管N2的放电过程,其漏极与所述第二传输门T1输出端、所述第一反相器I1的输入端及所述电容P1的一端相连;The gate of the first NMOS transistor N1 is controlled by the signal from the output terminal of the second inverter I2, feedback controls the discharge process of the second NMOS transistor N2, and its drain is connected to the second transmission gate The output terminal of T1, the input terminal of the first inverter I1 and one end of the capacitor P1 are connected;
所述电容P1的另一端接电源电压;The other end of the capacitor P1 is connected to a power supply voltage;
所述第一反相器I1的输出端与所述第二传输门T2的输入端相连;The output terminal of the first inverter I1 is connected to the input terminal of the second transmission gate T2;
所述第二传输门T2的输出端与所述第二反相器I2的输入端相连;The output end of the second transmission gate T2 is connected to the input end of the second inverter I2;
所述第二反相器I2的输出端与所述第三反相器I3的输入端相连;The output end of the second inverter I2 is connected to the input end of the third inverter I3;
所述第三反相器I3的输出端是所述单稳态电路的输出端VOUT,并且该输出信号被反馈连接至所述第一传输门T1的输入端;The output terminal of the third inverter I3 is the output terminal VOUT of the monostable circuit, and the output signal is fed back and connected to the input terminal of the first transmission gate T1;
所述第一传输门T1和第二传输门T2分别受控于传输门控制端的输入信号,使得在同一时间只有一个传输门导通以实现阻塞控制。The first transmission gate T1 and the second transmission gate T2 are respectively controlled by the input signal of the transmission gate control terminal, so that only one transmission gate is turned on at the same time to realize blocking control.
所述电容P1是MOS电容,所述MOS电容的栅极与所述第一传输门T1输出端、所述第一反相器I1的输入端及所述第一NMOS晶体管N1的漏极的相连,所述MOS电容的源极和漏极相连并接电源电压。The capacitor P1 is a MOS capacitor, the gate of the MOS capacitor is connected to the output terminal of the first transmission gate T1, the input terminal of the first inverter I1 and the drain of the first NMOS transistor N1 , the source and drain of the MOS capacitor are connected and connected to the power supply voltage.
所述基于阻塞控制的单稳态电路中还包括一个第四反相器I4,所述第四反相器I4的输出端与所述第二反相器I2的输入端相连,所述第四反相器I4的输入端与所述第二反相器I2的输出端相连。The monostable circuit based on blocking control also includes a fourth inverter I4, the output end of the fourth inverter I4 is connected to the input end of the second inverter I2, and the fourth inverter I4 is connected to the input end of the second inverter I2. The input end of the inverter I4 is connected to the output end of the second inverter I2.
作为本发明的一种选择,所述第二传输门T2采用NMOS结构,所述基于阻塞控制的单稳态电路中还包括一个或非门和第五反相器I5,所述或非门的一个输入端与所述第二反相器I2的输出端连接,所述或非门的另一个输入端连接到时钟信号CLK,所述或非门的输出为第一信号NCLK1,该信号与第五反相器I5输入端连接,所述第五反相器I5的输出时钟信号为第二信号CLK1,所述第二信号CLK1作为所述第二传输门T2控制端的输入信号控制所述第二传输门T2。As an option of the present invention, the second transmission gate T2 adopts an NMOS structure, and the monostable circuit based on blocking control also includes a NOR gate and a fifth inverter I5, and the NOR gate One input end is connected to the output end of the second inverter I2, the other input end of the NOR gate is connected to the clock signal CLK, and the output of the NOR gate is the first signal NCLK1, which is the same as the first signal NCLK1. The input terminals of five inverters I5 are connected, the output clock signal of the fifth inverter I5 is the second signal CLK1, and the second signal CLK1 is used as the input signal of the control terminal of the second transmission gate T2 to control the second Transmission gate T2.
作为本发明的又一种选择,所述第二传输门T2采用CMOS结构,所述基于阻塞控制的单稳态电路中还包括一个或非门和第五反相器I5,所述或非门的一个输入端与所述第二反相器I2的输出端连接,所述或非门的另一个输入端连接时钟信号CLK,所述或非门的输出为第一信号NCLK1,该信号与第五反相器I5输入端连接,所述第五反相器I5的输出为第二信号CLK1,所述第一信号NCLK1和第二信号CLK1作为所述第二传输门T2控制端的输入信号控制所述第二传输门T2。As another option of the present invention, the second transmission gate T2 adopts a CMOS structure, and the monostable circuit based on blocking control also includes a NOR gate and a fifth inverter I5, and the NOR gate One input end of the NOR gate is connected to the output end of the second inverter I2, the other input end of the NOR gate is connected to the clock signal CLK, and the output of the NOR gate is the first signal NCLK1, which is related to the first signal NCLK1. The input terminals of the five inverters I5 are connected, the output of the fifth inverter I5 is the second signal CLK1, and the first signal NCLK1 and the second signal CLK1 are used as the input signal of the control terminal of the second transmission gate T2 to control the Describe the second transmission gate T2.
作为本发明的再一种选择,所述第二传输门T2采用PMOS结构,所述基于阻塞控制的单稳态电路中还包括一个或非门,所述或非门的一个输入端与所述第二反相器I2的输出端连接,所述或非门的另一个输入端连接时钟信号CLK,所述或非门的输出为第一信号NCLK1,所述第一信号NCLK1作为所述第二传输门T2控制端的输入信号控制第二传输门T2。As another option of the present invention, the second transmission gate T2 adopts a PMOS structure, and the monostable circuit based on blocking control further includes a NOR gate, and an input terminal of the NOR gate is connected to the The output end of the second inverter I2 is connected, the other input end of the NOR gate is connected to the clock signal CLK, the output of the NOR gate is the first signal NCLK1, and the first signal NCLK1 is used as the second The input signal at the control terminal of the transmission gate T2 controls the second transmission gate T2.
所述基于阻塞控制的单稳态电路中还包括一个PMOS晶体管P2和一个第六反相器I6,所述第六反相器I6的输入端与该单稳态电路的输出端VOUT连接,所述第六反相器I6的输出端与所述PMOS晶体管P2的栅极相连,所述PMOS晶体管P2的源极连接电源电压,所述PMOS晶体管P2的漏极与所述第一传输门T1的输入端相连。其中,The monostable circuit based on blocking control also includes a PMOS transistor P2 and a sixth inverter I6, the input terminal of the sixth inverter I6 is connected to the output terminal VOUT of the monostable circuit, so The output terminal of the sixth inverter I6 is connected to the gate of the PMOS transistor P2, the source of the PMOS transistor P2 is connected to the power supply voltage, and the drain of the PMOS transistor P2 is connected to the first transmission gate T1. connected to the input. in,
当所述第一传输门T1是CMOS结构的传输门,第一传输门T1的PMOS管的栅极为一控制端,该控制端连接所述时钟信号CLK,第一传输门T1的NMOS管的栅极为另一控制端,该控制端连接时钟信号的反向信号NCLK;When the first transmission gate T1 is a transmission gate of CMOS structure, the gate of the PMOS transistor of the first transmission gate T1 is a control terminal, and the control terminal is connected to the clock signal CLK, and the gate of the NMOS transistor of the first transmission gate T1 Extremely another control terminal, which is connected to the reverse signal NCLK of the clock signal;
所述第二传输门T2是CMOS结构的传输门,第二传输门T2中的PMOS管的栅极为一控制端,该控制端连接所述时钟信号的反向信号NCLK所述或非门的输出的第一信号NCLK1,第二传输门T2的NMOS管的栅极为另一控制端,该控制端连接所述时钟信号CLK或所述反相器的输出的第二信号CLK1;或The second transmission gate T2 is a transmission gate of CMOS structure, the gate of the PMOS transistor in the second transmission gate T2 is a control terminal, and the control terminal is connected to the output of the NOR gate of the reverse signal NCLK of the clock signal The gate of the NMOS transistor of the second transmission gate T2 is another control terminal, and the control terminal is connected to the clock signal CLK or the second signal CLK1 output by the inverter; or
所述第二传输门T2是PMOS结构的传输门,所述第二传输门T2中的控制端连接所述时钟信号的反向信号NCLK或所述或非门的输出的第一信号NCLK1;或The second transmission gate T2 is a transmission gate with a PMOS structure, and the control terminal in the second transmission gate T2 is connected to the inverse signal NCLK of the clock signal or the first signal NCLK1 output by the NOR gate; or
所述第二传输门T2是NMOS结构的传输门,所述第二传输门T2中的控制端连接所述时钟信号CLK或所述反相器的输出的第二信号CLK1。The second transmission gate T2 is a transmission gate of NMOS structure, and the control terminal of the second transmission gate T2 is connected to the clock signal CLK or the second signal CLK1 output by the inverter.
当所述第一传输门T1是PMOS结构的传输门,所述第一传输门T1的控制端连接所述时钟信号CLK;When the first transmission gate T1 is a transmission gate with a PMOS structure, the control terminal of the first transmission gate T1 is connected to the clock signal CLK;
所述第二传输门T2是CMOS结构的传输门,第二传输门T2中的PMOS管的栅极为一控制端,该控制端连接时钟信号CLK的反向信号NCLK或所述或非门的输出的第一信号NCLK1,第二传输门T2中的NMOS管的栅极为另一控制端,该控制端连接时钟信号CLK或所述反相器的输出的第二信号CLK1;或The second transmission gate T2 is a transmission gate of CMOS structure, the gate of the PMOS transistor in the second transmission gate T2 is a control terminal, and the control terminal is connected to the inverse signal NCLK of the clock signal CLK or the output of the NOR gate The gate of the NMOS transistor in the second transmission gate T2 is another control terminal, and the control terminal is connected to the clock signal CLK or the second signal CLK1 output by the inverter; or
所述第二传输门T2是PMOS结构的传输门,所述第二传输门T2中的控制端连接时钟信号CLK的反向信号NCLK或所述非门的输出的第一信号NCLK1;或The second transmission gate T2 is a transmission gate with a PMOS structure, and the control terminal of the second transmission gate T2 is connected to the inverse signal NCLK of the clock signal CLK or the first signal NCLK1 output by the NOT gate; or
所述第二传输门T2是NMOS结构的传输门,所述第二传输门T2中的控制端连接所述时钟信号CLK或所述反相器的输出的第二信号CLK1。The second transmission gate T2 is a transmission gate of NMOS structure, and the control terminal of the second transmission gate T2 is connected to the clock signal CLK or the second signal CLK1 output by the inverter.
当所述第一传输门T1是NMOS结构的传输门,所述第一传输门T1中的控制端接时钟信号的反向信号NCLK;When the first transmission gate T1 is a transmission gate with an NMOS structure, the control terminal in the first transmission gate T1 is connected to the reverse signal NCLK of the clock signal;
所述第二传输门T2是CMOS结构的传输门,第二传输门T2中的PMOS管的栅极为一控制端,该控制端连接时钟信号的反向信号NCLK或所述反相器的输出的第一信号NCLK1,第二传输门T2中的NMOS管的栅极为另一控制端,该控制端连接时钟信号CLK或所述反相器的输出的第一信号CLK1;或The second transmission gate T2 is a transmission gate of CMOS structure, the gate of the PMOS transistor in the second transmission gate T2 is a control terminal, and the control terminal is connected to the reverse signal NCLK of the clock signal or the output of the inverter. The first signal NCLK1, the gate of the NMOS transistor in the second transmission gate T2 is another control terminal, and the control terminal is connected to the clock signal CLK or the first signal CLK1 output by the inverter; or
所述第二传输门T2是PMOS结构的传输门,所述第二传输门T2中的控制端连接所述时钟信号的反向信号NCLK或所述反相器的输出的第一信号NCLK1;或The second transmission gate T2 is a transmission gate with a PMOS structure, and the control terminal of the second transmission gate T2 is connected to the inverse signal NCLK of the clock signal or the first signal NCLK1 output by the inverter; or
所述第二传输门T2是NMOS结构的传输门,所述第二传输门T2中的控制端连接所述时钟信号CLK或所述反相器的输出的第二信号CLK1。The second transmission gate T2 is a transmission gate of NMOS structure, and the control terminal of the second transmission gate T2 is connected to the clock signal CLK or the second signal CLK1 output by the inverter.
本发明的优点在于,本发明中的单稳态电路无电阻设计,便于集成,且瞬态时间可调节。本发明中的电路最大的特点在于该暂态时间变化范围较小,利于产生精确的脉冲控制。The invention has the advantages that the monostable circuit in the invention has no resistance design, is easy to integrate, and the transient time can be adjusted. The greatest feature of the circuit in the present invention is that the transient time variation range is small, which is beneficial to generate precise pulse control.
附图说明 Description of drawings
图1为现有技术中积分型单稳态触发器电路原理图;Fig. 1 is the schematic diagram of integral monostable flip-flop circuit in the prior art;
图2为现有技术中微分型单稳态触发器电路原理图;Fig. 2 is the schematic diagram of differential monostable flip-flop circuit in the prior art;
图3为本发明的时钟信号CLK与时钟信号的反向信号NCLK之间的电路图;Fig. 3 is the circuit diagram between clock signal CLK of the present invention and the reverse signal NCLK of clock signal;
图4为本发明的充电情况下基于阻塞控制的单稳态电路原理图;Fig. 4 is the schematic diagram of the monostable circuit based on blocking control under the charging situation of the present invention;
图5为本发明的改进的充电情况下单稳态电路原理图;Fig. 5 is the monostable circuit schematic diagram under the improved charging situation of the present invention;
图6为本发明的防止再次触发的充电情况下单稳态电路原理图;Fig. 6 is the principle diagram of the monostable circuit in the case of charging to prevent retriggering of the present invention;
图7为本发明的防止再次触发的充电情况下单稳态电路的输出波形;Fig. 7 is the output waveform of the monostable circuit under the charging situation preventing retriggering of the present invention;
图8为本发明的放电情况下基于阻塞控制的单稳态电路原理图;Fig. 8 is the schematic diagram of the monostable circuit based on blocking control under the discharging situation of the present invention;
图9为本发明的改进的放电情况下单稳态电路原理图;Fig. 9 is a schematic diagram of the monostable circuit under the improved discharge situation of the present invention;
图10为本发明的防止再次触发的放电情况下单稳态电路原理图。FIG. 10 is a schematic diagram of a monostable circuit in the case of discharging to prevent retriggering according to the present invention.
具体实施方式 Detailed ways
下面结合附图和实施例对本发明进行进一步说明。The present invention will be further described below in conjunction with the accompanying drawings and embodiments.
CMOS英文全称:Complementary Metal Oxide Semiconductor,互补金属氧化物半导体;PMOS英文全称:Positive Channel Metal Oxide Semiconductor,P型金属氧化物半导体;NMOS英文全称:Negative Channel Mental Oxide Semiconductor,N型金属氧化物半导体。CMOS English full name: Complementary Metal Oxide Semiconductor, complementary metal oxide semiconductor; PMOS English full name: Positive Channel Metal Oxide Semiconductor, P-type metal oxide semiconductor; NMOS English full name: Negative Channel Mental Oxide Semiconductor, N-type metal oxide semiconductor.
该实施例中用CLK信号表示单稳态电路的外部触发信号。时钟信号CLK与时钟信号的反向信号NCLK之间的电路图,如图3所示。时钟信号CLK经过反相器I1后输出信号NCLK,此信号称为时钟信号CLK的反向信号。In this embodiment, the CLK signal is used to represent the external trigger signal of the monostable circuit. The circuit diagram between the clock signal CLK and the reverse signal NCLK of the clock signal is shown in FIG. 3 . The clock signal CLK outputs the signal NCLK after passing through the inverter I1, and this signal is called the reverse signal of the clock signal CLK.
充电情况下基于阻塞控制的单稳态电路原理图,如图4所示。电路的工作原理描述:The schematic diagram of the monostable circuit based on blocking control in the case of charging is shown in Figure 4. Description of how the circuit works:
当CLK保持高电平,传输门T1关断,传输门T2导通,A点处于高电平,B点为低电平,C点为低电平,D点电位保持高电平,VOUT为低,此时电路处于稳态。当CLK变为低电平时,传输门T1打开,A点经传输门T1放电,由于此时传输门T2关断,节点A的变化引起B点电平变化的信息被阻塞,此时VF仍然保持高电平,继续将第一PMOS晶体管P1对A点的充电路径关断,从而A点电平被初始化为低电平,B点电平跳高。但由于传输门T2的阻塞作用,使得C点D点的状态不会受到前级电路影响,电路保持稳态。当CLK再次变为高电平后,传输门T2打开,C点在前级反相器的驱动下跳高,D点变低,而此时输出VOUT也变高,电路进入暂态,A点开始充电。但由于传输门T2关断,从而阻塞了VOUT向A点充电的可能,此时电路的暂态将不受电路输出状态的影响。在暂态过程中,A点开始被VB、VF控制PMOS晶体管进行充电。当A点电压高于反相器I1阈值后,B点电压跳低,C点跳低,D变高,VF变高从而关断晶体管P1到A点的充电路径,电路进入稳态,VOUT变低。整体电路的输出脉冲的脉宽由暂态过程中的充电时间决定。其中,反相器I1阈值是电源电压的一半。When CLK keeps high level, transmission gate T1 is turned off, transmission gate T2 is turned on, point A is at high level, point B is at low level, point C is at low level, point D is at high level, and VOUT is low, the circuit is in a steady state. When CLK becomes low level, the transmission gate T1 is opened, and the point A is discharged through the transmission gate T1. Since the transmission gate T2 is turned off at this time, the change of the node A causes the information of the level change of the point B to be blocked, and VF is still maintained at this time. High level, continue to turn off the charging path of the first PMOS transistor P1 to point A, so that the level of point A is initialized to low level, and the level of point B jumps high. However, due to the blocking effect of the transmission gate T2, the state of point C and point D will not be affected by the previous stage circuit, and the circuit maintains a steady state. When CLK becomes high again, the transmission gate T2 is opened, point C jumps high under the drive of the previous stage inverter, point D becomes low, and at this time the output VOUT also becomes high, the circuit enters a transient state, and point A starts Charge. However, since the transmission gate T2 is turned off, the possibility of VOUT charging to point A is blocked, and the transient state of the circuit will not be affected by the output state of the circuit at this time. During the transient state, point A starts to be charged by VB and VF controlling the PMOS transistor. When the voltage at point A is higher than the threshold of inverter I1, the voltage at point B jumps low, the voltage at point C jumps low, D becomes high, and VF becomes high to turn off the charging path from transistor P1 to point A, the circuit enters a steady state, and VOUT becomes Low. The pulse width of the output pulse of the overall circuit is determined by the charging time in the transient process. Wherein, the threshold of the inverter I1 is half of the supply voltage.
改进的充电情况下单稳态电路原理图,如图5所示。该电路在图4的基础上通过增加或非门改变了控制传输门T2的时钟信号,从而避免了因CLK高电平时间短于暂态时间而产生的错误现象。当T2采用CMOS结构或PMOS结构时,还需要增加一个反相器I5。图5中T2结构采用的是CMOS结构。实际工作原理:由于采用的是或非门和一个反相器,一旦CLK信号从低电平跳到高电平,T2便开始导通,从而电路进入了暂态,A点开始充电,在A点充电结束前,C点保持为高,从而使得VS与CLK信号产生的NCLK1信号和CLK1信号在CLK提早变低的时候不会变化,只有当A点充电超过反相器阈值后,C点变低了才会将T2关断,从而保证了暂态变化的信息能够传递到输出端而不被T2的关断而阻塞。The schematic diagram of the monostable circuit under the improved charging condition is shown in Figure 5. On the basis of Figure 4, the circuit changes the clock signal controlling the transmission gate T2 by adding a NOR gate, thereby avoiding the error phenomenon caused by the CLK high level time being shorter than the transient time. When T2 adopts a CMOS structure or a PMOS structure, an inverter I5 needs to be added. What the T2 structure in Fig. 5 adopts is CMOS structure. Actual working principle: Since the NOR gate and an inverter are used, once the CLK signal jumps from low level to high level, T2 starts to conduct, so that the circuit enters a transient state, and point A begins to charge, and at A Before the charge at point A ends, point C remains high, so that the NCLK1 signal and CLK1 signal generated by VS and CLK signals will not change when CLK goes low early. Only when point A is charged beyond the inverter threshold, point C becomes When it is low, T2 will be turned off, so as to ensure that the information of transient changes can be transmitted to the output without being blocked by the turn-off of T2.
在充电情况下,防止再次触发的单稳态电路原理图如图6所示。该电路在图5的基础上增加一个反相器I6和一个NMOS晶体管N2。所谓的可重复触发是指当电路已经被CLK触发进入瞬态后,一旦CLK电平跳低后再跳高电平,引起电路重新进入暂态的情况。实际工作原理:电路通过晶体管N2检测输出信号从而检测电路状态,在电路被CLK信号触发进入瞬态时,如果还未回到稳态时,N2的栅极控制信号将保持为低电平,从而使得A点将不会在CLK为低电平时被复位到低电平,从而防止再次触发的发生。即保证了进行了一次瞬态到稳态的转换后才能进行二次的触发。该电路能够避免触发信号产生毛刺引起电路状态错误的情况,使得电路对瞬态的尖峰和毛刺有一定的免疫能力。In the case of charging, the schematic diagram of the monostable circuit to prevent retriggering is shown in Figure 6. This circuit adds an inverter I6 and an NMOS transistor N2 on the basis of Fig. 5 . The so-called repeatable triggering refers to the situation that when the circuit has been triggered by CLK to enter the transient state, once the CLK level jumps low and then jumps high again, causing the circuit to re-enter the transient state. Actual working principle: The circuit detects the output signal through the transistor N2 to detect the state of the circuit. When the circuit is triggered by the CLK signal and enters a transient state, if it has not returned to a steady state, the gate control signal of N2 will remain at a low level, thereby So that point A will not be reset to low level when CLK is low level, thereby preventing the occurrence of triggering again. That is, it is ensured that a second trigger can only be performed after a transition from a transient state to a steady state is performed. The circuit can avoid the circuit state error caused by the glitch of the trigger signal, so that the circuit has a certain immunity to the transient spike and glitch.
在本实施例中,用防止再次触发的充电情况下的单稳态电路做实验。输出的单稳态电路的波形图,如图7所示。从图7中可以看出,该单稳态电路保证了进行了一次瞬态到稳态的转换后才能进行第二次的触发,从而避免了触发信号产生毛刺引起电路状态错误的情况,使得电路对瞬态的尖峰和毛刺有一定的免疫能力。In this example, experiments were done with a monostable circuit in the case of charging to prevent retriggering. The waveform diagram of the output monostable circuit is shown in Figure 7. It can be seen from Figure 7 that the monostable circuit ensures that the second trigger can only be performed after a transition from a transient state to a steady state, thereby avoiding the situation where the trigger signal generates glitches that cause circuit state errors, making the circuit Some immunity to transient spikes and glitches.
在不同的PVT(PVT中,P指的是process工艺,V指的是voltage电压,T指的是temperature温度)下,对本发明的单稳态电路进行仿真实验结果如表1所示。表1给出了该电路产生1us的瞬态延时在不同PVT下的变化情况。从表1可以看出,本发明提出的单稳态电路最大的特点在于该暂态时间变化范围较小,利于产生精确的脉冲控制。仿真结果表明该电路产生的误差只有10%,而普通的积分式单稳态电路在集成于片上时,由于电阻电容的变化产生的误差为50%,这对于时间控制较严的情况完全不能使用。Under different PVTs (in PVT, P refers to the process technology, V refers to the voltage voltage, and T refers to the temperature temperature), the simulation results of the monostable circuit of the present invention are shown in Table 1. Table 1 shows the variation of the transient delay of 1us produced by the circuit under different PVTs. It can be seen from Table 1 that the biggest feature of the monostable circuit proposed by the present invention is that the transient time variation range is small, which is beneficial to generate precise pulse control. The simulation results show that the error produced by this circuit is only 10%, while the common integral monostable circuit has an error of 50% due to the change of resistance and capacitance when it is integrated on the chip, which is completely unusable in the case of strict time control .
表1不同PVT下的瞬态延时Table 1 Transient delay under different PVT
表1中,Temp表示为温度,单位是摄氏度。tt、ss、ff、fnsp/fs、snfp/sf分别表示为五种不同的工艺角下的仿真结果。本实施例中的仿真结果是基于smic18工艺的,其中,tt表示NMOS和PMOS晶体管都处于typical典型的工艺角;ss表示NMOS和PMOS晶体管都处于slow慢速的工艺角;ff表示NMOS和PMOS晶体管都处于fast快速的工艺角;fnsp/fs表示NMOS工作在快速的工艺角而PMOS工作在慢速的工艺角;snfp/sf表示NMOS工作在慢速的工艺角而PMOS工作在快速的工艺角。In Table 1, Temp is expressed as temperature in degrees Celsius. tt, ss, ff, fnsp/fs, snfp/sf respectively represent the simulation results under five different process angles. The simulation results in this embodiment are based on the smic18 process, where tt indicates that both NMOS and PMOS transistors are at the typical process angle; ss indicates that both the NMOS and PMOS transistors are at the slow process angle; ff indicates that the NMOS and PMOS transistors are at the slow process angle Both are in the fast process corner; fnsp/fs means that NMOS works in the fast process corner and PMOS works in the slow process corner; snfp/sf means that NMOS works in the slow process corner and PMOS works in the fast process corner.
放电情况下基于阻塞控制的单稳态电路原理图,如图8所示。电路的工作原理描述:The schematic diagram of the monostable circuit based on blocking control in the case of discharge is shown in Figure 8. Description of how the circuit works:
电路在稳态时,A点经由VF控制电流源放电的路径被关断,VF此时为低电平,即在电路中的D点也是低电平,C点为高电平,VOUT为高,当CLK信号为低电平时,只有传输门T1导通,那么此时A点为高电平,B点同时翻转为低电平,若此时CLK信号无变化,电路将保持该状态;一旦CLK信号变为高电平时,只有传输门T2导通,电路进入暂态。此时B点的状态经由T2传送到了C点,分别使得C点和D点的电平状态翻转,从而D点电平为高电平,那么VF此时为高电平,则A点开始经由VF控制的电流源放电,而同时T1被关断,A点将不受VOUT的影响,当A点被放电结束后,B点电平跳变为高电平,同时C点也为高电平,D点为低电平,VF则A点的放电路径关断,从而电路结束暂态进入了稳态。整体电路的输出脉冲的脉宽由暂态过程中的放电时间决定。When the circuit is in a steady state, point A is turned off through the discharge path of the current source controlled by VF, and VF is at low level at this time, that is, point D in the circuit is also at low level, point C is at high level, and VOUT is at high level , when the CLK signal is low level, only the transmission gate T1 is turned on, then point A is high level at this time, and point B is flipped to low level at the same time, if the CLK signal does not change at this time, the circuit will maintain this state; once When the CLK signal becomes high level, only the transmission gate T2 is turned on, and the circuit enters a transient state. At this time, the state of point B is transmitted to point C via T2, respectively causing the level states of points C and D to flip, so that the level of point D is high, then VF is high at this time, and point A starts to pass through The current source controlled by VF discharges, and at the same time T1 is turned off, point A will not be affected by VOUT, when point A is discharged, the level of point B jumps to high level, and point C is also high level , point D is at low level, and VF turns off the discharge path of point A, so that the circuit ends the transient state and enters a steady state. The pulse width of the output pulse of the overall circuit is determined by the discharge time in the transient process.
改进的放电情况下单稳态电路原理图,如图9所示。该电路在图8的基础上增加或非门来控制传输门T2的时钟信号,从而避免了因CLK高电平时间短于暂态时间而产生的错误现象。当T2采用CMOS结构或PMOS结构时,还需要增加一个反相器I5。图9中T2结构采用的是CMOS结构。实际工作原理:由于采用的是或非门和一个反相器,使得在A点放电结束后,VF电平变为低电平,此时才允许传输门T2的关闭。否则CLK信号即使在A点放电时间内跳变为低电平也不会导致T2的关闭。The schematic diagram of the monostable circuit under the improved discharge condition is shown in Figure 9. On the basis of Figure 8, this circuit adds a NOR gate to control the clock signal of the transmission gate T2, thereby avoiding the error phenomenon caused by the high level time of CLK being shorter than the transient time. When T2 adopts a CMOS structure or a PMOS structure, an inverter I5 needs to be added. The T2 structure in Fig. 9 adopts a CMOS structure. Actual working principle: Due to the use of a NOR gate and an inverter, after the discharge at point A is completed, the VF level becomes a low level, and at this time the transmission gate T2 is allowed to close. Otherwise, even if the CLK signal jumps to a low level during the discharge time of point A, it will not cause T2 to be closed.
防止再次触发的放电情况下单稳态电路原理图,如图10所示。该电路在图9的基础上增加一个反相器I6和一个PMOS晶体管P2。实际工作原理:通过增加PMOS晶体管P2来检测输出状态的变化防止可重复触发的发生。即保证了进行了一次瞬态到稳态的转换后才能进行二次的触发。从而能够避免触发信号产生毛刺引起电路状态错误的情况,使得电路对瞬态的尖峰和毛刺有一定的免疫能力。The schematic diagram of the monostable circuit in the case of discharging to prevent retriggering is shown in Figure 10. This circuit adds an inverter I6 and a PMOS transistor P2 on the basis of Fig. 9 . Actual working principle: By adding PMOS transistor P2 to detect the change of the output state to prevent the occurrence of repeated triggering. That is, it is ensured that a second trigger can only be performed after a transition from a transient state to a steady state is performed. Therefore, it is possible to avoid the circuit state error caused by the burr of the trigger signal, so that the circuit has a certain immunity to transient spikes and burrs.
最后所应说明的是,以上实施例仅用以说明本发明的技术方案而非限制。尽管参照实施例对本发明进行了详细说明,本领域的普通技术人员应当理解,对本发明的技术方案进行修改或者等同替换,都不脱离本发明技术方案的精神和范围,其均应涵盖在本发明的权利要求范围当中。Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention rather than limit them. Although the present invention has been described in detail with reference to the embodiments, those skilled in the art should understand that modifications or equivalent replacements to the technical solutions of the present invention do not depart from the spirit and scope of the technical solutions of the present invention, and all of them should be included in the scope of the present invention. within the scope of the claims.
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