CN101974770A - Aqueous solution for electrodepositing iridium layer and method for preparing iridium layer in aqueous solution by way of electrodeposition - Google Patents
Aqueous solution for electrodepositing iridium layer and method for preparing iridium layer in aqueous solution by way of electrodeposition Download PDFInfo
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- CN101974770A CN101974770A CN 201010548984 CN201010548984A CN101974770A CN 101974770 A CN101974770 A CN 101974770A CN 201010548984 CN201010548984 CN 201010548984 CN 201010548984 A CN201010548984 A CN 201010548984A CN 101974770 A CN101974770 A CN 101974770A
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- 229910052741 iridium Inorganic materials 0.000 title claims abstract description 71
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 title claims abstract description 71
- 238000004070 electrodeposition Methods 0.000 title claims abstract description 40
- 239000007864 aqueous solution Substances 0.000 title claims abstract description 35
- 238000000034 method Methods 0.000 title claims abstract description 21
- 239000000243 solution Substances 0.000 claims abstract description 23
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 18
- 239000008367 deionised water Substances 0.000 claims abstract description 17
- 229910021641 deionized water Inorganic materials 0.000 claims abstract description 17
- 150000003839 salts Chemical class 0.000 claims abstract description 16
- 150000002504 iridium compounds Chemical class 0.000 claims abstract description 15
- 239000003638 chemical reducing agent Substances 0.000 claims abstract description 14
- 238000003756 stirring Methods 0.000 claims abstract description 9
- 239000011734 sodium Substances 0.000 claims description 28
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid group Chemical group C(CC(O)(C(=O)O)CC(=O)O)(=O)O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 claims description 21
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 21
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 claims description 20
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 claims description 19
- 229910052708 sodium Inorganic materials 0.000 claims description 19
- 229960003975 potassium Drugs 0.000 claims description 18
- 229910052700 potassium Inorganic materials 0.000 claims description 18
- 239000011591 potassium Substances 0.000 claims description 18
- QGZKDVFQNNGYKY-UHFFFAOYSA-O Ammonium Chemical compound [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 claims description 14
- FAPWRFPIFSIZLT-UHFFFAOYSA-M Sodium chloride Chemical compound [Na+].[Cl-] FAPWRFPIFSIZLT-UHFFFAOYSA-M 0.000 claims description 14
- 239000000463 material Substances 0.000 claims description 14
- FGIUAXJPYTZDNR-UHFFFAOYSA-N potassium nitrate Chemical compound [K+].[O-][N+]([O-])=O FGIUAXJPYTZDNR-UHFFFAOYSA-N 0.000 claims description 14
- VWDWKYIASSYTQR-UHFFFAOYSA-N sodium nitrate Chemical compound [Na+].[O-][N+]([O-])=O VWDWKYIASSYTQR-UHFFFAOYSA-N 0.000 claims description 14
- UMGDCJDMYOKAJW-UHFFFAOYSA-N thiourea Chemical compound NC(N)=S UMGDCJDMYOKAJW-UHFFFAOYSA-N 0.000 claims description 14
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims description 12
- 229910000838 Al alloy Inorganic materials 0.000 claims description 10
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 9
- 229910002804 graphite Inorganic materials 0.000 claims description 9
- 239000010439 graphite Substances 0.000 claims description 9
- 238000002360 preparation method Methods 0.000 claims description 9
- 229910021638 Iridium(III) chloride Inorganic materials 0.000 claims description 8
- DANYXEHCMQHDNX-UHFFFAOYSA-K trichloroiridium Chemical compound Cl[Ir](Cl)Cl DANYXEHCMQHDNX-UHFFFAOYSA-K 0.000 claims description 8
- XSQUKJJJFZCRTK-UHFFFAOYSA-N Urea Natural products NC(N)=O XSQUKJJJFZCRTK-UHFFFAOYSA-N 0.000 claims description 7
- 229910000402 monopotassium phosphate Inorganic materials 0.000 claims description 7
- 235000019796 monopotassium phosphate Nutrition 0.000 claims description 7
- LNOPIUAQISRISI-UHFFFAOYSA-N n'-hydroxy-2-propan-2-ylsulfonylethanimidamide Chemical compound CC(C)S(=O)(=O)CC(N)=NO LNOPIUAQISRISI-UHFFFAOYSA-N 0.000 claims description 7
- PJNZPQUBCPKICU-UHFFFAOYSA-N phosphoric acid;potassium Chemical compound [K].OP(O)(O)=O PJNZPQUBCPKICU-UHFFFAOYSA-N 0.000 claims description 7
- 239000001508 potassium citrate Substances 0.000 claims description 7
- 229960002635 potassium citrate Drugs 0.000 claims description 7
- QEEAPRPFLLJWCF-UHFFFAOYSA-K potassium citrate (anhydrous) Chemical compound [K+].[K+].[K+].[O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O QEEAPRPFLLJWCF-UHFFFAOYSA-K 0.000 claims description 7
- 235000011082 potassium citrates Nutrition 0.000 claims description 7
- 235000010333 potassium nitrate Nutrition 0.000 claims description 7
- 239000004323 potassium nitrate Substances 0.000 claims description 7
- BTAAXEFROUUDIL-UHFFFAOYSA-M potassium;sulfamate Chemical compound [K+].NS([O-])(=O)=O BTAAXEFROUUDIL-UHFFFAOYSA-M 0.000 claims description 7
- 239000011780 sodium chloride Substances 0.000 claims description 7
- 239000004317 sodium nitrate Substances 0.000 claims description 7
- 235000010344 sodium nitrate Nutrition 0.000 claims description 7
- 229910021639 Iridium tetrachloride Inorganic materials 0.000 claims description 6
- PMZURENOXWZQFD-UHFFFAOYSA-L Sodium Sulfate Chemical compound [Na+].[Na+].[O-]S([O-])(=O)=O PMZURENOXWZQFD-UHFFFAOYSA-L 0.000 claims description 6
- ZPWVASYFFYYZEW-UHFFFAOYSA-L dipotassium hydrogen phosphate Chemical compound [K+].[K+].OP([O-])([O-])=O ZPWVASYFFYYZEW-UHFFFAOYSA-L 0.000 claims description 6
- BNIILDVGGAEEIG-UHFFFAOYSA-L disodium hydrogen phosphate Chemical compound [Na+].[Na+].OP([O-])([O-])=O BNIILDVGGAEEIG-UHFFFAOYSA-L 0.000 claims description 6
- HTFVQFACYFEXPR-UHFFFAOYSA-K iridium(3+);tribromide Chemical compound Br[Ir](Br)Br HTFVQFACYFEXPR-UHFFFAOYSA-K 0.000 claims description 6
- WUHYYTYYHCHUID-UHFFFAOYSA-K iridium(3+);triiodide Chemical compound [I-].[I-].[I-].[Ir+3] WUHYYTYYHCHUID-UHFFFAOYSA-K 0.000 claims description 6
- 229910000403 monosodium phosphate Inorganic materials 0.000 claims description 6
- 235000019799 monosodium phosphate Nutrition 0.000 claims description 6
- ZPBSAMLXSQCSOX-UHFFFAOYSA-N naphthalene-1,3,6-trisulfonic acid Chemical compound OS(=O)(=O)C1=CC(S(O)(=O)=O)=CC2=CC(S(=O)(=O)O)=CC=C21 ZPBSAMLXSQCSOX-UHFFFAOYSA-N 0.000 claims description 6
- 239000006179 pH buffering agent Substances 0.000 claims description 6
- 229910052697 platinum Inorganic materials 0.000 claims description 6
- 239000003870 refractory metal Substances 0.000 claims description 6
- CVHZOJJKTDOEJC-UHFFFAOYSA-N saccharin Chemical group C1=CC=C2C(=O)NS(=O)(=O)C2=C1 CVHZOJJKTDOEJC-UHFFFAOYSA-N 0.000 claims description 6
- 229940081974 saccharin Drugs 0.000 claims description 6
- 235000019204 saccharin Nutrition 0.000 claims description 6
- 239000000901 saccharin and its Na,K and Ca salt Substances 0.000 claims description 6
- 235000002639 sodium chloride Nutrition 0.000 claims description 6
- 239000001509 sodium citrate Substances 0.000 claims description 6
- NLJMYIDDQXHKNR-UHFFFAOYSA-K sodium citrate Chemical compound O.O.[Na+].[Na+].[Na+].[O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O NLJMYIDDQXHKNR-UHFFFAOYSA-K 0.000 claims description 6
- 235000011083 sodium citrates Nutrition 0.000 claims description 6
- AJPJDKMHJJGVTQ-UHFFFAOYSA-M sodium dihydrogen phosphate Chemical compound [Na+].OP(O)([O-])=O AJPJDKMHJJGVTQ-UHFFFAOYSA-M 0.000 claims description 6
- 229910052938 sodium sulfate Inorganic materials 0.000 claims description 6
- 235000011152 sodium sulphate Nutrition 0.000 claims description 6
- QDWYPRSFEZRKDK-UHFFFAOYSA-M sodium;sulfamate Chemical compound [Na+].NS([O-])(=O)=O QDWYPRSFEZRKDK-UHFFFAOYSA-M 0.000 claims description 6
- CALMYRPSSNRCFD-UHFFFAOYSA-J tetrachloroiridium Chemical compound Cl[Ir](Cl)(Cl)Cl CALMYRPSSNRCFD-UHFFFAOYSA-J 0.000 claims description 6
- YWYZEGXAUVWDED-UHFFFAOYSA-N triammonium citrate Chemical compound [NH4+].[NH4+].[NH4+].[O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O YWYZEGXAUVWDED-UHFFFAOYSA-N 0.000 claims description 6
- XTEGVFVZDVNBPF-UHFFFAOYSA-N 1,5-naphthalene disulfonic acid Natural products C1=CC=C2C(S(=O)(=O)O)=CC=CC2=C1S(O)(=O)=O XTEGVFVZDVNBPF-UHFFFAOYSA-N 0.000 claims description 5
- 239000000872 buffer Substances 0.000 claims description 5
- 229910052750 molybdenum Inorganic materials 0.000 claims description 4
- 229910052702 rhenium Inorganic materials 0.000 claims description 4
- 229910052721 tungsten Inorganic materials 0.000 claims description 4
- 238000010438 heat treatment Methods 0.000 claims description 3
- 229910052758 niobium Inorganic materials 0.000 claims description 3
- 210000001170 unmyelinated nerve fiber Anatomy 0.000 claims description 3
- 239000003795 chemical substances by application Substances 0.000 claims description 2
- LSNNMFCWUKXFEE-UHFFFAOYSA-M Bisulfite Chemical compound OS([O-])=O LSNNMFCWUKXFEE-UHFFFAOYSA-M 0.000 claims 1
- 239000006172 buffering agent Substances 0.000 claims 1
- 239000002245 particle Substances 0.000 abstract description 8
- 239000006174 pH buffer Substances 0.000 abstract description 2
- 239000010410 layer Substances 0.000 description 47
- 238000000576 coating method Methods 0.000 description 9
- 229910052751 metal Inorganic materials 0.000 description 9
- 239000002184 metal Substances 0.000 description 9
- 239000011248 coating agent Substances 0.000 description 6
- 239000000203 mixture Substances 0.000 description 5
- 239000000758 substrate Substances 0.000 description 5
- 238000000151 deposition Methods 0.000 description 4
- 230000008021 deposition Effects 0.000 description 4
- 230000003647 oxidation Effects 0.000 description 4
- 238000007254 oxidation reaction Methods 0.000 description 4
- 230000003064 anti-oxidating effect Effects 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 238000001755 magnetron sputter deposition Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 229910000510 noble metal Inorganic materials 0.000 description 2
- 238000007750 plasma spraying Methods 0.000 description 2
- 241001544487 Macromiidae Species 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 229910018487 Ni—Cr Inorganic materials 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 239000011203 carbon fibre reinforced carbon Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000011247 coating layer Substances 0.000 description 1
- 238000002485 combustion reaction Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000010849 ion bombardment Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 239000011253 protective coating Substances 0.000 description 1
- WUAPFZMCVAUBPE-UHFFFAOYSA-N rhenium atom Chemical compound [Re] WUAPFZMCVAUBPE-UHFFFAOYSA-N 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
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Abstract
本发明公开了一种电沉积铱层的水溶液及其在该溶液中电沉积制备铱层的方法,配制100ml的所述水溶液中含有铱化合物以铱计的浓度为0.3~8g、应力降低剂0.002~0.09mol、导电盐0.002~0.12mol、pH值缓冲剂0.002~0.06mol。电沉积铱层时水溶液的pH值为2.0~5.0,阴极电流密度为0.01~4.00A/dm2,在搅拌速度为60~1500r/min、温度为70~90℃下,电沉积1.0~50h后取出,用去离子水冲洗,然后在温度为35~55℃下干燥5~30min后,即在阴极板材表面制得了颗粒尺寸为0.1~1.5μm的铱层。制备的铱层平整、致密、颗粒均匀,而且没有裂纹。
The invention discloses an aqueous solution of an electrodeposited iridium layer and a method for preparing an iridium layer by electrodeposition in the solution. 100ml of the aqueous solution is prepared to contain an iridium compound with a concentration of 0.3-8g in terms of iridium and a stress reducer of 0.002 ~0.09mol, conductive salt 0.002~0.12mol, pH buffer 0.002~0.06mol. When electrodepositing the iridium layer, the pH value of the aqueous solution is 2.0-5.0, the cathode current density is 0.01-4.00A/dm 2 , and the stirring speed is 60-1500r/min, the temperature is 70-90°C, after 1.0-50 hours of electrodeposition Take it out, wash it with deionized water, and then dry it at a temperature of 35-55° C. for 5-30 minutes, and then form an iridium layer with a particle size of 0.1-1.5 μm on the surface of the cathode plate. The prepared iridium layer is flat, dense, uniform in grains and free of cracks.
Description
技术领域technical field
本发明涉及一种电沉积制备铱层所用的水溶液,还涉及在该水溶液中采用恒电流方法来电沉积制备铱层。The invention relates to an aqueous solution used for preparing an iridium layer by electrodeposition, and also relates to using a constant current method in the aqueous solution to prepare an iridium layer by electrodeposition.
背景技术Background technique
许多高温材料如C/C、陶瓷和难熔金属如钼Mo、铼Re、钨W等由于熔点高可用作如导弹巡洋舰涡轮发动机、火箭燃烧室内壁、气体涡轮发动机、火力发电机、汽车工业及其它需要高温的基体材料,但是这些材料因不能承受1500℃以上的超高温氧化腐蚀而使它们的特性难以发挥。为了在超高温下还能保持这些材料的特性,必须要在它们表面制备致密的可抗超高温氧化的涂层。抗氧化涂层的材料主要有硅化物、贵金属、Ni-Cr合金等。贵金属铱Ir以其一系列的优异性能,作为抗氧化涂层而备受青睐。铱Ir是目前唯一同时满足高强度、高熔点和超高温优异抗氧化性的难熔金属,因此,铱层可以作为极端环境下高温材料和难熔金属构件的超高温抗氧化涂层,它比常规氧化涂层具有更高的使用温度和更长的使用寿命。Many high-temperature materials such as C/C, ceramics and refractory metals such as molybdenum Mo, rhenium Re, tungsten W, etc., can be used as missile cruiser turbine engines, rocket combustion chamber walls, gas turbine engines, thermal power generators, and automobile industries due to their high melting points. And other base materials that require high temperature, but these materials are difficult to exert their characteristics because they cannot withstand ultra-high temperature oxidation corrosion above 1500 °C. In order to maintain the properties of these materials at ultra-high temperatures, it is necessary to prepare dense coatings that can resist ultra-high temperature oxidation on their surfaces. The materials of anti-oxidation coating mainly include silicide, noble metal, Ni-Cr alloy and so on. The noble metal iridium Ir is favored as an anti-oxidation coating for its series of excellent properties. Iridium Ir is currently the only refractory metal that satisfies high strength, high melting point, and excellent oxidation resistance at ultra-high temperatures. Therefore, the iridium layer can be used as an ultra-high temperature anti-oxidation coating for high-temperature materials and refractory metal components in extreme environments. Conventional oxidation coatings have a higher service temperature and longer service life.
目前,获取铱层的方法主要有:化学气相沉积、磁控溅射、等离子喷涂法、双辉等离子法、高温熔融盐体系中电沉积等。化学气相沉积制备铱层所需设备昂贵、成本高。磁控溅射方法能够制备出高纯度的铱涂层,但沉积速率较慢,而且不适合沉积在形状复杂的部件上。等离子喷涂得到的铱层孔隙率较高,不能作为保护涂层来使用,特别是在超高温环境下。利用双辉等离子方法所制得的铱涂层,由于在制备过程中,铱涂层遭受高密度离子轰击,在涂层内部产生很高的残余应力。高温熔盐电沉积制备铱层存在操作温度过高、能耗大、强腐蚀等问题。At present, the methods for obtaining the iridium layer mainly include: chemical vapor deposition, magnetron sputtering, plasma spraying method, double glow plasma method, electrodeposition in high temperature molten salt system, etc. The equipment required for preparing the iridium layer by chemical vapor deposition is expensive and the cost is high. The magnetron sputtering method can produce high-purity iridium coatings, but the deposition rate is slow and it is not suitable for deposition on complex shapes. The iridium layer obtained by plasma spraying has a high porosity and cannot be used as a protective coating, especially in an ultra-high temperature environment. The iridium coating prepared by the double-glow plasma method produces high residual stress inside the coating due to the high-density ion bombardment of the iridium coating during the preparation process. The preparation of iridium layer by high-temperature molten salt electrodeposition has problems such as high operating temperature, high energy consumption, and strong corrosion.
发明内容Contents of the invention
本发明的目的之一是提出一种在电沉积制备铱层时采用的水溶液,配制100ml的所述水溶液中含有铱化合物(以铱计)的浓度为0.3~8g、应力降低剂0.002~0.09mol、导电盐0.002~0.12mol、pH值缓冲剂0.002~0.06mol。One of purpose of the present invention is to propose a kind of aqueous solution that adopts when preparing iridium layer by electrodeposition, the concentration that contains iridium compound (calculated by iridium) in the described aqueous solution of preparation 100ml is 0.3~8g, stress reducing agent 0.002~0.09mol , conductive salt 0.002-0.12mol, pH value buffer agent 0.002-0.06mol.
所述的铱化合物是溶于水的三氯化铱IrCl3、四氯化铱IrCl4、三溴化铱IrBr3、三碘化铱IrI3、六氯亚铱酸钠Na3IrCl6、六氯亚铱酸钾K3IrCl6、六氯亚铱酸铵(NH4)3IrCl6、六溴亚铱酸钠Na3IrBr6、六溴亚铱酸钾K3IrBr6、六氯铱酸钠Na2IrCl6、六氯铱酸钾K2IrCl6和六氯铱酸铵(NH4)2IrCl6中的一种。The iridium compound is water-soluble iridium trichloride IrCl 3 , iridium tetrachloride IrCl 4 , iridium tribromide IrBr 3 , iridium triiodide IrI 3 , sodium hexachloroiridite Na 3 IrCl 6 , Potassium chloroiridite K 3 IrCl 6 , ammonium hexachloroiridite (NH 4 ) 3 IrCl 6 , sodium hexabromoiridite Na 3 IrBr 6 , potassium hexabromoiridite K 3 IrBr 6 , hexachloroiridate One of sodium Na 2 IrCl 6 , potassium hexachloroiridate K 2 IrCl 6 and ammonium hexachloroiridate (NH 4 ) 2 IrCl 6 .
所述的应力降低剂是糖精、氨基磺酸、氨基磺酸钠、氨基磺酸钾、1,5-萘磺酸、1,3,6-萘三磺酸、硫脲中的一种。The stress reducing agent is one of saccharin, sulfamic acid, sodium sulfamate, potassium sulfamate, 1,5-naphthalenesulfonic acid, 1,3,6-naphthalenetrisulfonic acid, and thiourea.
所述的导电盐是硝酸钾、硫酸钠、硝酸钠和氯化钠中的一种。The conductive salt is one of potassium nitrate, sodium sulfate, sodium nitrate and sodium chloride.
所述的pH值缓冲剂是柠檬酸、柠檬酸铵、柠檬酸钠、柠檬酸钾、磷酸二氢钠、磷酸二氢钾、磷酸氢二钾、磷酸氢二钠中的一种。The pH buffering agent is one of citric acid, ammonium citrate, sodium citrate, potassium citrate, sodium dihydrogen phosphate, potassium dihydrogen phosphate, dipotassium hydrogen phosphate and disodium hydrogen phosphate.
水溶液的pH值的范围可以是2.0~5.0。The pH value of the aqueous solution may range from 2.0 to 5.0.
本发明的另一个目的是提出一种在水溶液中采用恒电流的方法来电沉积制备铱层的方法。利用本方法在水溶液中电沉积制备的铱层具有操作方便,铱层平整、致密、颗粒均匀,没有裂纹,而且适合沉积在形状复杂的零部件上等优点。Another object of the present invention is to propose a method for preparing an iridium layer by electrodeposition in an aqueous solution using a constant current method. The iridium layer prepared by electrodeposition in aqueous solution by the method has the advantages of convenient operation, smooth, dense, uniform particles, no cracks, and suitable for deposition on components with complex shapes.
本发明的一种在电沉积铱层的水溶液中制备铱层的方法,是在恒电流方式条件下,在阴极上进行电沉积制备铱层的步骤有:A kind of method for preparing iridium layer in the aqueous solution of electrodeposited iridium layer of the present invention is to carry out the step of preparing iridium layer by electrodeposition on the cathode under the condition of constant current mode:
(A)配制电解槽液(A) Preparation of electrolyzer solution
首先将一定量的应力降低剂、导电盐和pH值缓冲剂依次溶解在去离子水中,然后在加温下边搅拌边加入一定量的铱化合物,定容至一定体积。最后用2.0mol/L的NaOH溶液或者2.0mol/L的HCl溶液调整水溶液的pH值。First, a certain amount of stress reducing agent, conductive salt and pH value buffer are dissolved in deionized water in turn, and then a certain amount of iridium compound is added while stirring under heating, and the volume is constant to a certain volume. Finally, adjust the pH value of the aqueous solution with 2.0 mol/L NaOH solution or 2.0 mol/L HCl solution.
所述的铱化合物是溶于水的三氯化铱、四氯化铱、三溴化铱、三碘化铱、六氯亚铱酸钠(III)、六氯亚铱酸钾(III)、六氯亚铱酸铵(III)、六溴亚铱酸钠(III)、六溴亚铱酸钾(III)、六氯铱酸钠(IV)、六氯铱酸钾(IV)和六氯铱酸铵(IV)中的一种。Described iridium compound is water-soluble iridium trichloride, iridium tetrachloride, iridium tribromide, iridium triiodide, sodium hexachloroiridite (III), potassium hexachloroiridite (III), Ammonium(III) hexachloroiridite, sodium(III) hexabromoiridite, potassium(III) hexachloroiridate, sodium(IV) hexachloroiridate, potassium(IV) hexachloroiridate and hexachloroiridate One of ammonium iridate (IV).
所述的应力降低剂可以是糖精、氨基磺酸、氨基磺酸钠、氨基磺酸钾、1,5-萘磺酸、1,3,6-萘三磺酸、硫脲中的一种。The stress reducer may be one of saccharin, sulfamic acid, sodium sulfamate, potassium sulfamate, 1,5-naphthalenesulfonic acid, 1,3,6-naphthalenetrisulfonic acid, and thiourea.
所述的导电盐可以是硝酸钾、硫酸钠、硝酸钠和氯化钠中的一种。The conductive salt can be one of potassium nitrate, sodium sulfate, sodium nitrate and sodium chloride.
所述的pH值缓冲剂可以是柠檬酸、柠檬酸铵、柠檬酸钠、柠檬酸钾、磷酸二氢钠、磷酸二氢钾、磷酸氢二钾、磷酸氢二钠中的一种。The pH buffering agent can be one of citric acid, ammonium citrate, sodium citrate, potassium citrate, sodium dihydrogen phosphate, potassium dihydrogen phosphate, dipotassium hydrogen phosphate, and disodium hydrogen phosphate.
(B)选电极(B) Electrode selection
阳极:石墨、铂或铱中的一种;Anode: one of graphite, platinum or iridium;
阴极:阴极选用其表面具有导电性的板材即可,如C纤维、发动机基体材料Ni3Al合金,Mo、W、Pt、Re或者Nb难熔金属。Cathode: The cathode can be made of a plate with conductivity on the surface, such as C fiber, Ni 3 Al alloy of engine base material, Mo, W, Pt, Re or Nb refractory metal.
(C)恒电流条件电沉积(C) Electrodeposition under constant current conditions
电沉积铱层时水溶液的pH值调节至2.0~5.0范围,阴极电流密度为0.01~4.00A/dm2,在搅拌速度为60~1500r/min、温度为70~90℃下,电沉积1.0~50h后取出,用去离子水冲洗,然后在温度为35~55℃下干燥5~30min后,即在阴极板材表面制得了铱层。制备的铱层平整、致密、颗粒均匀,而且没有裂纹。When electrodepositing the iridium layer, the pH value of the aqueous solution is adjusted to the range of 2.0 to 5.0, the cathode current density is 0.01 to 4.00A/dm 2 , the stirring speed is 60 to 1500r/min, and the temperature is 70 to 90°C. After 50 hours, it is taken out, rinsed with deionized water, and then dried at a temperature of 35-55°C for 5-30 minutes, and an iridium layer is formed on the surface of the cathode plate. The prepared iridium layer is flat, dense, uniform in grains and free of cracks.
附图说明Description of drawings
图1是本发明实施例1制得的铱层SEM图片。FIG. 1 is an SEM picture of an iridium layer prepared in Example 1 of the present invention.
图1A是本发明实施例1制得的铱层放大的SEM图片。FIG. 1A is an enlarged SEM picture of the iridium layer prepared in Example 1 of the present invention.
图2是在Pt电极表面获得铱层的EDS图。Figure 2 is an EDS image of an iridium layer obtained on the surface of a Pt electrode.
具体实施方式Detailed ways
下面将结合实例对本发明做进一步的详细说明。The present invention will be described in further detail below in conjunction with examples.
本发明的一种在电沉积制备铱层时采用的水溶液(电解槽液),该水溶液由铱化合物、应力降低剂、导电盐和pH值缓冲剂组成;A kind of aqueous solution (electrolyzer liquid) that adopts when electrodeposition prepares iridium layer of the present invention, this aqueous solution is made up of iridium compound, stress reducer, conductive salt and pH buffering agent;
用量:配制100ml的电沉积铱层的水溶液中包含有0.3~8g的铱化合物(所述的铱化合物是以铱元素为计量的)、0.002~0.09mol的应力降低剂、0.002~0.12mol的导电盐、0.002~0.06mol的pH值缓冲剂。Dosage: Prepare 100ml of electrodeposited iridium layer aqueous solution containing 0.3-8g of iridium compound (the iridium compound is measured as iridium element), 0.002-0.09mol of stress reducer, 0.002-0.12mol of conductive Salt, 0.002-0.06mol pH buffer.
在本发明中,所述的铱化合物是易溶于水的三氯化铱IrCl3、四氯化铱IrCl4、三溴化铱IrBr3、三碘化铱IrI3、六氯亚铱酸钠Na3IrCl6、六氯亚铱酸钾K3IrCl6、六氯亚铱酸铵(NH4)3IrCl6、六溴亚铱酸钠Na3IrBr6、六溴亚铱酸钾K3IrBr6、六氯铱酸钠Na2IrCl6、六氯铱酸钾K2IrCl6和六氯铱酸铵(NH4)2IrCl6中的一种。In the present invention, the iridium compound is water-soluble iridium trichloride IrCl 3 , iridium tetrachloride IrCl 4 , iridium tribromide IrBr 3 , iridium triiodide IrI 3 , sodium hexachloroiridite Na 3 IrCl 6 , potassium hexachloroiridite K 3 IrCl 6 , ammonium hexachloroiridite (NH 4 ) 3 IrCl 6 , sodium hexabromoiridite Na 3 IrBr 6 , potassium hexabromoiridite K 3 IrBr 6. One of sodium hexachloroiridate Na 2 IrCl 6 , potassium hexachloroiridate K 2 IrCl 6 and ammonium hexachloroiridate (NH 4 ) 2 IrCl 6 .
在本发明中,所述的应力降低剂可以是糖精、氨基磺酸、氨基磺酸钠、氨基磺酸钾、1,5-萘磺酸、1,3,6-萘三磺酸、硫脲中的一种。In the present invention, the stress reducer can be saccharin, sulfamic acid, sodium sulfamate, potassium sulfamate, 1,5-naphthalenesulfonic acid, 1,3,6-naphthalenetrisulfonic acid, thiourea One of.
在本发明中,所述的导电盐可以是硝酸钾、硫酸钠、硝酸钠和氯化钠中的一种。In the present invention, the conductive salt may be one of potassium nitrate, sodium sulfate, sodium nitrate and sodium chloride.
在本发明中,所述的pH值缓冲剂可以是柠檬酸、柠檬酸铵、柠檬酸钠、柠檬酸钾、磷酸二氢钠、磷酸二氢钾、磷酸氢二钾、磷酸氢二钠中的一种。In the present invention, the pH buffering agent can be citric acid, ammonium citrate, sodium citrate, potassium citrate, sodium dihydrogen phosphate, potassium dihydrogen phosphate, dipotassium hydrogen phosphate, disodium hydrogen phosphate A sort of.
在本发明中,电沉积铱层时的水溶液的pH值的范围可以是2.0~5.0,阴极电流密度可以是0.01~4.00A/dm2,电沉积的溶液温度可以是70~90℃。应用本发明,在恒电流方式条件下,在阴极上进行电沉积制备铱层的步骤有:In the present invention, the pH value of the aqueous solution during electrodeposition of the iridium layer may range from 2.0 to 5.0, the cathode current density may be from 0.01 to 4.00A/dm 2 , and the temperature of the electrodeposited solution may be from 70 to 90°C. Applying the present invention, under the condition of constant current mode, the steps of preparing iridium layer by electrodeposition on the cathode include:
(A)配制电解槽液(A) Preparation of electrolyzer solution
首先将一定量的应力降低剂、导电盐和pH值缓冲剂依次溶解在去离子水中,然后在加温下边搅拌边加入一定量的铱化合物,定容至一定体积。最后用2.0mol/L的NaOH溶液或者2.0mol/L的HCl溶液调整水溶液(电解槽液)的pH值。First, a certain amount of stress reducing agent, conductive salt and pH value buffer are dissolved in deionized water in turn, and then a certain amount of iridium compound is added while stirring under heating, and the volume is constant to a certain volume. Finally, adjust the pH value of the aqueous solution (electrolytic bath) with 2.0 mol/L NaOH solution or 2.0 mol/L HCl solution.
所述的铱化合物可以是易溶于水的三氯化铱、四氯化铱、三溴化铱、三碘化铱、六氯亚铱酸钠(III)、六氯亚铱酸钾(III)、六氯亚铱酸铵(III)、六溴亚铱酸钠(III)、六溴亚铱酸钾(III)、六氯铱酸钠(IV)、六氯铱酸钾(IV)和六氯铱酸铵(IV)中的一种。Described iridium compound can be easily water-soluble iridium trichloride, iridium tetrachloride, iridium tribromide, iridium triiodide, sodium hexachloroiridite (III), potassium hexachloroiridite (III ), ammonium (III) hexachloroiridite, sodium (III) hexabromoiridite, potassium (III) hexabromoiridate, sodium (IV) hexachloroiridate, potassium (IV) hexachloroiridate and One of ammonium hexachloroiridate (IV).
所述的应力降低剂可以是糖精、氨基磺酸、氨基磺酸钠、氨基磺酸钾、1,5-萘磺酸、1,3,6-萘三磺酸、硫脲中的一种。The stress reducer may be one of saccharin, sulfamic acid, sodium sulfamate, potassium sulfamate, 1,5-naphthalenesulfonic acid, 1,3,6-naphthalenetrisulfonic acid, and thiourea.
所述的导电盐可以是硝酸钾、硫酸钠、硝酸钠和氯化钠中的一种。The conductive salt can be one of potassium nitrate, sodium sulfate, sodium nitrate and sodium chloride.
所述的pH值缓冲剂可以是柠檬酸、柠檬酸铵、柠檬酸钠、柠檬酸钾、磷酸二氢钠、磷酸二氢钾、磷酸氢二钾、磷酸氢二钠中的一种。The pH buffering agent can be one of citric acid, ammonium citrate, sodium citrate, potassium citrate, sodium dihydrogen phosphate, potassium dihydrogen phosphate, dipotassium hydrogen phosphate, and disodium hydrogen phosphate.
(B)选电极(B) Electrode selection
阳极:石墨、铂或铱中的一种;Anode: one of graphite, platinum or iridium;
阴极:阴极选用其表面具有导电性的板材即可,如C纤维、发动机基体材料Ni3Al合金,Mo、W、Pt、Re或者Nb难熔金属。Cathode: The cathode can be made of a plate with conductivity on the surface, such as C fiber, Ni 3 Al alloy of engine base material, Mo, W, Pt, Re or Nb refractory metal.
(C)恒电流条件电沉积(C) Electrodeposition under constant current conditions
电沉积铱层时水溶液的pH值调节至2.0~5.0范围,阴极电流密度为0.01~4.00A/dm2,在搅拌速度为60~1500r/min、温度为70~90℃下,电沉积1.0~50h后取出,用去离子水冲洗,然后在温度为35~55℃下干燥5~30min后,即在阴极板材表面制得了铱层。制备的铱层平整、致密、颗粒均匀,而且没有裂纹。When electrodepositing the iridium layer, the pH value of the aqueous solution is adjusted to the range of 2.0 to 5.0, the cathode current density is 0.01 to 4.00A/dm 2 , the stirring speed is 60 to 1500r/min, and the temperature is 70 to 90°C. Take it out after 50 hours, wash it with deionized water, and then dry it at a temperature of 35-55° C. for 5-30 minutes, and then an iridium layer is formed on the surface of the cathode plate. The prepared iridium layer is flat, dense, uniform in grains and free of cracks.
实施例1:Example 1:
在电沉积槽中,分别将0.04mol氨基磺酸、0.05mol硝酸钠、0.03mol柠檬酸依次全部溶解于50ml的去离子水中;然后在60r/min的搅拌速度下边搅拌边加入以铱元素计量为3.8g的三氯化铱(IrCl3),升温至80℃±2℃,使三氯化铱充分溶解,加入去离子水至溶液100ml,最后用2.0mol/L的NaOH溶液调节pH值至3.5±0.2。In the electrodeposition tank, respectively dissolve 0.04mol sulfamic acid, 0.05mol sodium nitrate, and 0.03mol citric acid in 50ml of deionized water; 3.8g of iridium trichloride (IrCl 3 ), heated up to 80°C±2°C to fully dissolve the iridium trichloride, add deionized water to 100ml of the solution, and finally adjust the pH value to 3.5 with 2.0mol/L NaOH solution ±0.2.
用石墨板(石墨板的尺寸3.0cm×2.0cm×0.1cm,纯度99.9%)作阳极,用Pt金板(Pt金板的尺寸3.0cm×2.0cm×0.1cm)作阴极,阳极表面与阴极表面相互平行排列,且阳极与阴极之间的距离约为20mm;Use a graphite plate (the size of the graphite plate is 3.0cm × 2.0cm × 0.1cm, with a purity of 99.9%) as the anode, and a Pt gold plate (the size of the Pt gold plate is 3.0cm × 2.0cm × 0.1cm) as the cathode, and the surface of the anode and the cathode The surfaces are arranged parallel to each other, and the distance between the anode and the cathode is about 20mm;
通直流电进行电沉积,采用恒电流方式,阴极电流密度为0.50A/dm2;Electrodeposition is carried out by direct current, and the constant current method is adopted, and the cathode current density is 0.50A/dm 2 ;
在80℃±2℃的电沉积液中电沉积20h后取出阴极基体材料,用去离子水冲洗,然后在温度为35℃下干燥10min后,即在Pt表面制得了铱层。After electrodeposition in the electrodeposition solution at 80°C±2°C for 20 hours, the cathode base material was taken out, rinsed with deionized water, and then dried at 35°C for 10 minutes to form an iridium layer on the Pt surface.
对在Pt表面获得的铱层利用扫描电镜(SEM)进行观察,其形貌如图1所示。由图1可以看出,在Pt基体表面存在有平整、致密的覆盖层;由图1A可以看出,在Pt基体上覆盖层的颗粒比较均匀,且颗粒约为0.3μm。The iridium layer obtained on the Pt surface was observed with a scanning electron microscope (SEM), and its morphology is shown in FIG. 1 . It can be seen from Figure 1 that there is a flat and dense covering layer on the surface of the Pt substrate; it can be seen from Figure 1A that the particles of the covering layer on the Pt substrate are relatively uniform, and the particles are about 0.3 μm.
对在Pt表面获得的覆盖层进行EDS测试,如图2所示。由图2可知,Pt表面获得的覆盖层成分为金属铱Ir。The EDS test was performed on the coating layer obtained on the Pt surface, as shown in Figure 2. It can be seen from Figure 2 that the composition of the covering layer obtained on the Pt surface is metal iridium Ir.
实施例2:Example 2:
在电沉积槽中,分别将0.01mol氨基磺酸钾、0.01mol硝酸钾、0.004mol磷酸二氢钾依次全部溶解于50ml的去离子水中;然后在1000r/min的搅拌速度下边搅拌边加入以铱元素计量为1.0g的六氯亚铱酸钠(III),升温至70℃±2℃,使六氯亚铱酸钠(III)充分溶解,加入去离子水至溶液100ml,最后用2.0mol/L的HCl溶液调节pH值至2.5±0.2。In the electrodeposition tank, respectively dissolve 0.01mol potassium sulfamate, 0.01mol potassium nitrate, and 0.004mol potassium dihydrogen phosphate in 50ml of deionized water; then add iridium while stirring at a stirring speed of 1000r/min. Sodium hexachloroiridite (III) with an elemental measurement of 1.0g was heated up to 70°C±2°C to fully dissolve sodium hexachloroiridite (III), and deionized water was added to make the solution 100ml, and finally 2.0mol/ L of HCl solution to adjust the pH to 2.5 ± 0.2.
用石墨板(石墨板的尺寸3.0cm×2.0cm×0.1cm,纯度99.9%)作阳极,用发动机基体材料Ni3Al合金板(Ni3Al合金板的尺寸3.0cm×2.0cm×0.1cm)作阴极,阳极表面与阴极表面相互平行排列,且阳极与阴极之间的距离约为20mm;Use a graphite plate (the size of the graphite plate is 3.0cm×2.0cm×0.1cm, and the purity is 99.9%) as the anode, and use the engine base material Ni 3 Al alloy plate (the size of the Ni 3 Al alloy plate is 3.0cm×2.0cm×0.1cm) As a cathode, the surface of the anode and the surface of the cathode are arranged parallel to each other, and the distance between the anode and the cathode is about 20mm;
通直流电进行电沉积,采用恒电流方式,阴极电流密度为3A/dm2;Electrodeposition is carried out by direct current, and the constant current method is adopted, and the cathode current density is 3A/dm 2 ;
在70℃±2℃的电沉积液中电沉积5h后取出阴极基体材料,用去离子水冲洗,然后在温度为50℃下干燥5min后,即在Pt表面制得了铱层。After electrodeposition in the electrodeposition solution at 70°C±2°C for 5 hours, the cathode base material was taken out, rinsed with deionized water, and then dried at a temperature of 50°C for 5 minutes to form an iridium layer on the Pt surface.
对在Ni3Al合金板表面获得的铱层利用扫描电镜(SEM)进行观察,在Ni3Al合金板基体表面存在有平整、致密的覆盖层;在Ni3Al合金板基体上覆盖层的颗粒比较均匀,且颗粒约为1.1μm。Observing the iridium layer obtained on the surface of the Ni 3 Al alloy plate with a scanning electron microscope (SEM), there is a smooth and dense covering layer on the surface of the Ni 3 Al alloy plate substrate; the particles of the covering layer on the Ni 3 Al alloy plate substrate Relatively uniform, and the particles are about 1.1μm.
对在Ni3Al合金板表面获得的覆盖层进行EDS测试,Ni3Al合金板表面获得的覆盖层成分为金属铱Ir。The EDS test was carried out on the covering layer obtained on the surface of the Ni 3 Al alloy plate, and the composition of the covering layer obtained on the surface of the Ni 3 Al alloy plate was metallic iridium Ir.
实施例3:Example 3:
在电沉积槽中,分别将0.08mol硫脲、0.10mol氯化钠、0.05mol柠檬酸钾依次全部溶解于50ml的去离子水中;然后在800r/min的搅拌速度下边搅拌边加入以铱元素计量为7.0g的六氯铱酸铵(IV),升温至85℃±2℃,使六氯铱酸铵(IV)充分溶解,加入去离子水至溶液100ml,最后用2.0mol/L的HCl溶液调节pH值至4.5±0.2。In the electrodeposition tank, respectively dissolve 0.08mol thiourea, 0.10mol sodium chloride, and 0.05mol potassium citrate in 50ml of deionized water; For 7.0g of ammonium hexachloroiridate (IV), heat up to 85°C±2°C to fully dissolve the ammonium hexachloroiridate (IV), add deionized water to a solution of 100ml, and finally use 2.0mol/L HCl solution Adjust the pH to 4.5 ± 0.2.
用石墨板(石墨板的尺寸3.0cm×2.0cm×0.1cm,纯度99.9%)作阳极,用Re金属板(Re金属板的尺寸3.0cm×2.0cm×0.1cm)作阴极,阳极表面与阴极表面相互平行排列,且阳极与阴极之间的距离约为20mm;Use a graphite plate (the size of the graphite plate is 3.0cm × 2.0cm × 0.1cm, and the purity is 99.9%) as the anode, and use a Re metal plate (the size of the Re metal plate is 3.0cm × 2.0cm × 0.1cm) as the cathode, and the surface of the anode and the cathode The surfaces are arranged parallel to each other, and the distance between the anode and the cathode is about 20mm;
通直流电进行电沉积,采用恒电流方式,阴极电流密度为1.50A/dm2;Electrodeposition is carried out by direct current, and the constant current method is adopted, and the cathode current density is 1.50A/dm 2 ;
在85℃±2℃的电沉积液中电沉积10h后取出阴极基体材料,用去离子水冲洗,然后在温度为35℃下干燥10min后,即在Pt表面制得了铱层。After electrodeposition in the electrodeposition solution at 85°C±2°C for 10 hours, the cathode base material was taken out, rinsed with deionized water, and then dried at a temperature of 35°C for 10 minutes to form an iridium layer on the Pt surface.
对在Re金属板表面获得的铱层利用扫描电镜(SEM)进行观察,在Re金属板表面存在有平整、致密的覆盖层;在Re金属板上覆盖层的颗粒比较均匀,且颗粒约为0.5μm。The iridium layer obtained on the surface of the Re metal plate is observed with a scanning electron microscope (SEM), and there is a smooth and dense covering layer on the surface of the Re metal plate; the particles of the covering layer on the Re metal plate are relatively uniform, and the particles are about 0.5 μm.
对在Re金属板表面获得的覆盖层进行EDS测试,Re金属板表面获得的覆盖层成分为金属铱Ir。The EDS test was carried out on the covering layer obtained on the surface of the Re metal plate, and the composition of the covering layer obtained on the surface of the Re metal plate was metal iridium Ir.
采用实施例1的通直流电进行电沉积,采用恒电流方式,阴极电流密度为0.50A/dm2;在80℃±2℃的电沉积液中电沉积20h后取出阴极基体材料,用去离子水冲洗,然后在温度为35℃下干燥10min后,即在Pt表面制得了铱层。这样制备铱层所需的水溶液组成为:Electrodeposition is carried out by direct current in Example 1, and the constant current method is adopted, and the cathode current density is 0.50A/dm 2 ; after 20 hours of electrodeposition in the electrodeposition solution at 80°C ± 2°C, the cathode base material is taken out, and deionized water After rinsing and drying at a temperature of 35° C. for 10 minutes, an iridium layer was formed on the Pt surface. Prepare the required aqueous solution composition of iridium layer like this:
采用在本发明配制的水溶液中电沉积制备铱层能够在较低温度(70~90℃)中操作,工艺条件如溶液组成、溶液pH值、电流密度易控制等优点,适合于沉积在各种形状的基体表面,设备投资少、工艺相对简单、操作容易,因此,在水溶液中电沉积制备铱层具有广阔的应用前景。The preparation of the iridium layer by electrodeposition in the aqueous solution prepared by the present invention can be operated at a lower temperature (70-90° C.), and the process conditions such as solution composition, solution pH value, and current density are easy to control. It is suitable for deposition in various Shaped substrate surface, low equipment investment, relatively simple process, and easy operation. Therefore, the preparation of iridium layer by electrodeposition in aqueous solution has broad application prospects.
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