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CN101902215B - Four-input terminal comparator - Google Patents

Four-input terminal comparator Download PDF

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CN101902215B
CN101902215B CN2010102427268A CN201010242726A CN101902215B CN 101902215 B CN101902215 B CN 101902215B CN 2010102427268 A CN2010102427268 A CN 2010102427268A CN 201010242726 A CN201010242726 A CN 201010242726A CN 101902215 B CN101902215 B CN 101902215B
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mos transistor
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comparator
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CN101902215A (en
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白胜天
陈建兴
罗彦
邢巍
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SINO WEALTH ELECTRONIC CO Ltd
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Abstract

本发明公开了一种四输入端比较器,具有四个输入端,当应用在类似多节电池方案中时只需要一个基准源,节省了芯片面积和成本,提高了电路性能。其技术方案为:比较器具有第一MOS管、第二MOS管、第三MOS管和第四MOS管,其中第一MOS管和第二MOS管的栅极分别连接第一输入电压和第二输入电压,第一MOS管和第二MOS管的源极分别连接第三输入电压和第四输入电压。第三MOS管和第四MOS管构成电流镜结构,第三MOS管构成二极管连接方式,第三MOS管的漏极连接至第一MOS管的漏极,第四MOS管的漏极连接至第二MOS管的漏极且为比较器的输出。

Figure 201010242726

The invention discloses a comparator with four input terminals, which has four input terminals and only needs one reference source when it is applied in a scheme similar to multi-section batteries, which saves chip area and cost and improves circuit performance. The technical solution is: the comparator has a first MOS transistor, a second MOS transistor, a third MOS transistor and a fourth MOS transistor, wherein the gates of the first MOS transistor and the second MOS transistor are connected to the first input voltage and the second MOS transistor respectively. The input voltage, the sources of the first MOS transistor and the second MOS transistor are respectively connected to the third input voltage and the fourth input voltage. The third MOS transistor and the fourth MOS transistor form a current mirror structure, the third MOS transistor forms a diode connection mode, the drain of the third MOS transistor is connected to the drain of the first MOS transistor, and the drain of the fourth MOS transistor is connected to the first MOS transistor. The drain of the two MOS transistors is the output of the comparator.

Figure 201010242726

Description

四输入端比较器Four Input Comparator

技术领域 technical field

本发明涉及一种比较器,尤其涉及一种具有四个输入端的比较器,并且适于在单片式集成电路芯片中使用。The present invention relates to a comparator, and more particularly to a comparator having four inputs and suitable for use in a monolithic integrated circuit chip.

背景技术 Background technique

在模拟集成电路领域,比较器的应用非常广泛。比较器是通过将两个电压进行比较并且输出高低电平信号供后级电路处理。In the field of analog integrated circuits, comparators are widely used. The comparator compares two voltages and outputs high and low level signals for subsequent circuit processing.

传统的比较器如图1所示,比较器由第一级和第二级组成,第一级由输入对管M1和M2、负载对管M3和M4、以及电流源Ib1构成,第二级由MOS管M5以及电流源Ib构成。比较电压分别连接至M1、M2的栅极,从图1中看,即第一输入电压Vin输入至M1的栅极,第二输入电压Vip输入至M2的栅极。The traditional comparator is shown in Figure 1. The comparator is composed of the first stage and the second stage. The first stage is composed of the input pair of transistors M1 and M2, the load pair of transistors M3 and M4, and the current source Ib1 . The second stage It is composed of MOS transistor M5 and current source Ib . The comparison voltages are respectively connected to the gates of M1 and M2. As seen from FIG. 1, the first input voltage V in is input to the gate of M1, and the second input voltage V ip is input to the gate of M2.

传统比较器的输入比较电压Vin和Vip都是相对于同一个电位(Vgnd)的,这种比较器是对Vin-Vgnd和Vig-Vgnd两个电压差进行比较。The input comparison voltages V in and V ip of a traditional comparator are both relative to the same potential (V gnd ), and this comparator compares two voltage differences between V in -V gnd and V ig -V gnd .

当Vin-Vgnd=Vip-Vgnd,即当Vin=Vip时比较器输出电压Vout翻转。如果不考虑比较器的电源电位VDD以及地电位Vgnd,传统比较器的输入电压有两个Vin和Vip,因此可以称传统电压比较器为双输入端电压比较器,亦可表示为如图2所示。When V in -V gnd =V ip -V gnd , that is, when V in =V ip , the output voltage V out of the comparator is reversed. If the power supply potential V DD and the ground potential V gnd of the comparator are not considered, the input voltage of the traditional comparator has two V in and V ip , so the traditional voltage comparator can be called a dual-input voltage comparator, and can also be expressed as as shown in picture 2.

在实际应用过程中,图2所示的比较器的其中一个输入端连接到基准电压Vref,另一端连接到需要检测的电压。In practical application, one of the input terminals of the comparator shown in FIG. 2 is connected to the reference voltage V ref , and the other terminal is connected to the voltage to be detected.

由于传统比较器两个输入端都是相对于同一个电位,因此当需要检测的电压的相对电位改变时,对应的基准电压Vref也同样需要改变。Since the two input terminals of the traditional comparator are relative to the same potential, when the relative potential of the voltage to be detected changes, the corresponding reference voltage V ref also needs to be changed.

例如在多节锂离子电池应用方案中,需要对多节电池电压进行检测,采用传统比较器的实现方法是需要在每节电池之间提供一个基准电压,然后将多节电池的分压与对应的基准电压相比较。例如如图3所示,由于是四节电池,因此需要四个基准电压。图3中VC1~VC4分别代表四节电池的正输入端,Vd1~Vd4分别代表四节电池各自的分压,Vref1~Vref4分别代表每一节电池对应的基准电压,满足关系式:For example, in the multi-cell lithium-ion battery application scheme, it is necessary to detect the voltage of multiple cells. The implementation method of using a traditional comparator is to provide a reference voltage between each cell, and then divide the voltage of the multiple cells with the corresponding compared with the reference voltage. For example, as shown in FIG. 3 , since there are four batteries, four reference voltages are required. In Figure 3, VC1~VC4 represent the positive input terminals of the four batteries, Vd1~Vd4 respectively represent the divided voltages of the four batteries, V ref1 ~V ref4 represent the reference voltage corresponding to each battery, and satisfy the relationship:

Vref4-Vgnd=Vref3-Vc4=Vref2-Vc3=Vref1-Vc2 V ref4 -V gnd =V ref3 -V c4 =V ref2 -V c3 =V ref1 -V c2

这种实现方式存在一定的局限性:This implementation has certain limitations:

(1)每一节电池需要一个基准电压,随着电池数量的增加,基准源电路也随之增加,对应芯片的面积和成本会随之增加。(1) Each battery needs a reference voltage. As the number of batteries increases, the reference source circuit also increases, and the area and cost of the corresponding chip will increase accordingly.

(2)每节电池之间的基准源电路的不匹配性(Mismatch)会引入额外的误差,对整体的精度会带来影响。(2) The mismatch of the reference source circuit (Mismatch) between each battery will introduce additional errors, which will affect the overall accuracy.

发明内容 Contents of the invention

本发明的目的在于解决上述问题,提供了一种四输入端比较器,具有四个输入端,当应用在类似多节电池方案中时只需要一个基准源,节省了芯片面积和成本,提高了电路性能。The purpose of the present invention is to solve the above problems, providing a four-input comparator with four input terminals, which only needs one reference source when applied in a similar multi-cell battery solution, which saves chip area and cost, and improves circuit performance.

本发明的技术方案为:本发明揭示了一种四输入端比较器,包括:The technical solution of the present invention is: the present invention discloses a four-input comparator, comprising:

第一MOS管和第二MOS管,其中第一MOS管的栅极连接第一输入电压,第二MOS管的栅极连接第二输入电压,第一MOS管的源极连接第三输入电压,第二MOS管的源极连接第四输入电压;The first MOS transistor and the second MOS transistor, wherein the gate of the first MOS transistor is connected to the first input voltage, the gate of the second MOS transistor is connected to the second input voltage, and the source of the first MOS transistor is connected to the third input voltage, The source of the second MOS transistor is connected to the fourth input voltage;

第三MOS管和第四MOS管,其中第三MOS管的栅极和漏极短接,第三MOS管的源极连接电源电压,第三MOS管的漏极连接第一MOS管的漏极,第四MOS管的栅极和第三MOS管的栅极相连,第四MOS管的源极连接电源电压,第四MOS管的漏极连接第二MOS管的漏极且是四输入端比较器的输出。The third MOS transistor and the fourth MOS transistor, wherein the gate and drain of the third MOS transistor are short-circuited, the source of the third MOS transistor is connected to the power supply voltage, and the drain of the third MOS transistor is connected to the drain of the first MOS transistor , the gate of the fourth MOS transistor is connected to the gate of the third MOS transistor, the source of the fourth MOS transistor is connected to the power supply voltage, the drain of the fourth MOS transistor is connected to the drain of the second MOS transistor and is a four-input comparison output of the device.

根据本发明的四输入端比较器的一实施例,第一MOS管和第二MOS管的尺寸相同,第三MOS管和第四MOS管的尺寸相同。According to an embodiment of the four-input comparator of the present invention, the size of the first MOS transistor and the second MOS transistor are the same, and the size of the third MOS transistor and the fourth MOS transistor are the same.

根据本发明的四输入端比较器的一实施例,该四输入端比较器还包括:According to an embodiment of the four-input comparator of the present invention, the four-input comparator further includes:

第五MOS管,其栅极连接第四MOS管的漏极,其源极连接电源电压,其漏极连接一电流源且是四输入端比较器的输出,电流源的另一端接地。The gate of the fifth MOS transistor is connected to the drain of the fourth MOS transistor, the source is connected to the power supply voltage, the drain is connected to a current source which is the output of the four-input comparator, and the other end of the current source is grounded.

根据本发明的四输入端比较器的一实施例,第一MOS管的源极连有第一电阻,第二MOS管的源极连有第二电阻。According to an embodiment of the four-input comparator of the present invention, the source of the first MOS transistor is connected to the first resistor, and the source of the second MOS transistor is connected to the second resistor.

根据本发明的四输入端比较器的一实施例,第一MOS管的源极接地。According to an embodiment of the four-input comparator of the present invention, the source of the first MOS transistor is grounded.

本发明还揭示了一种四输入端比较器,包括:The present invention also discloses a four-input comparator, comprising:

第一MOS管和第二MOS管,其中第一MOS管的栅极连接第一输入电压,第二MOS管的栅极连接第二输入电压,第一MOS管的源极连接第三输入电压,第二MOS管的源极连接第四输入电压;The first MOS transistor and the second MOS transistor, wherein the gate of the first MOS transistor is connected to the first input voltage, the gate of the second MOS transistor is connected to the second input voltage, and the source of the first MOS transistor is connected to the third input voltage, The source of the second MOS transistor is connected to the fourth input voltage;

第三MOS管和第四MOS管,其中第三MOS管的漏极和栅极短接,第三MOS管的源极接地,第三MOS管的漏极连接第一MOS管的漏极,第四MOS管的栅极和第三MOS管的栅极相连,第四MOS管的源极接地,第四MOS管的漏极连接第二MOS管的漏极且是四输入端比较器的输出。The third MOS transistor and the fourth MOS transistor, wherein the drain and gate of the third MOS transistor are short-circuited, the source of the third MOS transistor is grounded, the drain of the third MOS transistor is connected to the drain of the first MOS transistor, and the drain of the third MOS transistor is connected to the drain of the first MOS transistor. The gates of the four MOS transistors are connected to the gate of the third MOS transistor, the source of the fourth MOS transistor is grounded, and the drain of the fourth MOS transistor is connected to the drain of the second MOS transistor and is the output of the four-input comparator.

根据本发明的四输入端比较器的一实施例,第一MOS管和第二MOS管的尺寸相同,第三MOS管和第四MOS管的尺寸相同。According to an embodiment of the four-input comparator of the present invention, the size of the first MOS transistor and the second MOS transistor are the same, and the size of the third MOS transistor and the fourth MOS transistor are the same.

根据本发明的四输入端比较器的一实施例,该四输入端比较器还包括:According to an embodiment of the four-input comparator of the present invention, the four-input comparator further includes:

第五MOS管,其栅极连接第四MOS管的漏极,其源极接地,其漏极连接一电流源且是四输入端比较器的输出,电流源的另一端接电源电压。The gate of the fifth MOS transistor is connected to the drain of the fourth MOS transistor, the source is grounded, the drain is connected to a current source which is the output of the four-input comparator, and the other end of the current source is connected to the power supply voltage.

根据本发明的四输入端比较器的一实施例,第一MOS管的源极连有第一电阻,第二MOS管的源极连有第二电阻。According to an embodiment of the four-input comparator of the present invention, the source of the first MOS transistor is connected to the first resistor, and the source of the second MOS transistor is connected to the second resistor.

根据本发明的四输入端比较器的一实施例,第二MOS管的栅极连接一基准电压。According to an embodiment of the four-input comparator of the present invention, the gate of the second MOS transistor is connected to a reference voltage.

本发明又揭示了一种四输入端比较器,包括:The present invention also discloses a four-input comparator, comprising:

第一三极管和第二三极管,其中第一三极管的基极连接第一输入电压,第二三极管的基极连接第二输入电压,第一三极管的发射极连接第三输入电压,第二三极管的发射极连接第四输入电压;The first triode and the second triode, wherein the base of the first triode is connected to the first input voltage, the base of the second triode is connected to the second input voltage, and the emitter of the first triode is connected to the third input voltage, the emitter of the second transistor is connected to the fourth input voltage;

第三三极管和第四三极管,其中第三三极管的基极和集电极短接,第三三极管的发射极连接电源电压,第三三极管的集电极连接第一三极管的集电极,第四三极管的基极和第三三极管的基极相连,第四三极管的发射极连接电源电压,第四三极管的集电极和第二三极管的集电极相连且是四输入端比较器的输出。The third triode and the fourth triode, wherein the base and collector of the third triode are short-circuited, the emitter of the third triode is connected to the power supply voltage, and the collector of the third triode is connected to the first The collector of the triode, the base of the fourth triode are connected to the base of the third triode, the emitter of the fourth triode is connected to the power supply voltage, the collector of the fourth triode is connected to the second three The collector of the pole tube is connected and is the output of the four-input comparator.

根据本发明的四输入端比较器的一实施例,第一三极管和第二三极管的尺寸相同,第三三极管和第四三极管的尺寸相同。According to an embodiment of the four-input comparator of the present invention, the first transistor and the second transistor have the same size, and the third transistor and the fourth transistor have the same size.

根据本发明的四输入端比较器的一实施例,该四输入端比较器还包括:According to an embodiment of the four-input comparator of the present invention, the four-input comparator further includes:

第五三极管,其基极连接第四三极管的集电极,其发射极连接电源电压,其集电极连接一电流源且是四输入端比较器的输出,电流源的另一端接地。The base of the fifth transistor is connected to the collector of the fourth transistor, the emitter is connected to the power supply voltage, the collector is connected to a current source which is the output of the four-input comparator, and the other end of the current source is grounded.

根据本发明的四输入端比较器的一实施例,第一三极管的发射极连有第一电阻,第二三极管的发射极连有第二电阻。According to an embodiment of the four-input comparator of the present invention, the emitter of the first transistor is connected to the first resistor, and the emitter of the second transistor is connected to the second resistor.

本发明另外揭示了一种四输入端比较器,包括:The present invention additionally discloses a four-input comparator, comprising:

第一三极管和第二三极管,其中第一三极管的基极连接第一输入电压,第二三极管的基极连接第二输入电压,第一三极管的发射极连接第三输入电压,第二三极管的发射极连接第四输入电压;The first triode and the second triode, wherein the base of the first triode is connected to the first input voltage, the base of the second triode is connected to the second input voltage, and the emitter of the first triode is connected to the third input voltage, the emitter of the second transistor is connected to the fourth input voltage;

第三三极管和第四三极管,其中第三三极管的集电极和基极短接,第三三极管的集电极连接第一三极管的集电极,第三三极管的发射极接地,第四三极管的基极和第三三极管的基极相连,第四三极管的发射极接地,第四三极管的集电极与第二三极管的集电极相连且是四输入端比较器的输出。The third triode and the fourth triode, wherein the collector and base of the third triode are short-circuited, the collector of the third triode is connected to the collector of the first triode, and the third triode The emitter of the fourth triode is grounded, the base of the fourth triode is connected to the base of the third triode, the emitter of the fourth triode is grounded, the collector of the fourth triode is connected to the collector of the second triode The electrodes are connected and are the output of a four-input comparator.

根据本发明的四输入端比较器的一实施例,第一三极管和第二三极管的尺寸相同,第三三极管和第四三极管的尺寸相同。According to an embodiment of the four-input comparator of the present invention, the first transistor and the second transistor have the same size, and the third transistor and the fourth transistor have the same size.

根据本发明的四输入端比较器的一实施例,该四输入端比较器还包括:According to an embodiment of the four-input comparator of the present invention, the four-input comparator further includes:

第五三极管,其基极连接第四三极管的集电极,其发射极接地,其集电极连接一电流源且是四输入端比较器的输出,电流源的另一端接电源电压。The base of the fifth transistor is connected to the collector of the fourth transistor, the emitter is grounded, the collector is connected to a current source and is the output of the four-input comparator, and the other end of the current source is connected to the power supply voltage.

根据本发明的四输入端比较器的一实施例,第一三极管的发射极连有第一电阻,第二三极管的发射极连有第二电阻。According to an embodiment of the four-input comparator of the present invention, the emitter of the first transistor is connected to the first resistor, and the emitter of the second transistor is connected to the second resistor.

本发明对比现有技术有如下的有益效果:本发明的比较器具有第一MOS管、第二MOS管、第三MOS管和第四MOS管,其中第一MOS管和第二MOS管的栅极分别连接第一输入电压和第二输入电压,第一MOS管和第二MOS管的源极分别连接第三输入电压和第四输入电压。第三MOS管和第四MOS管构成电流镜结构,第三MOS管构成二极管连接方式,第三MOS管的漏极连接至第一MOS管的漏极,第四MOS管的漏极连接至第二MOS管的漏极且为比较器的输出。对比现有技术,在上述的多节电池方案中,本发明可以直接将各串的电池电压与低压下的同一个基准电压进行比较,因此只需要一个基准电压源电路,节省了多个基准源,从而节省了芯片成本,提高了电路的性能。Compared with the prior art, the present invention has the following beneficial effects: the comparator of the present invention has a first MOS transistor, a second MOS transistor, a third MOS transistor and a fourth MOS transistor, wherein the gates of the first MOS transistor and the second MOS transistor The poles are respectively connected to the first input voltage and the second input voltage, and the sources of the first MOS transistor and the second MOS transistor are respectively connected to the third input voltage and the fourth input voltage. The third MOS transistor and the fourth MOS transistor form a current mirror structure, the third MOS transistor forms a diode connection mode, the drain of the third MOS transistor is connected to the drain of the first MOS transistor, and the drain of the fourth MOS transistor is connected to the first MOS transistor. The drain of the two MOS transistors is the output of the comparator. Compared with the prior art, in the above multi-cell battery solution, the present invention can directly compare the battery voltage of each string with the same reference voltage under low voltage, so only one reference voltage source circuit is needed, saving multiple reference sources , thereby saving the cost of the chip and improving the performance of the circuit.

附图说明 Description of drawings

图1是传统比较器内部电路的示意图。Figure 1 is a schematic diagram of the internal circuit of a conventional comparator.

图2是传统的两输入端比较器的示意图。FIG. 2 is a schematic diagram of a conventional two-input comparator.

图3是采用传统比较器实现多节电池电压检测方式的示意图。FIG. 3 is a schematic diagram of a multi-cell battery voltage detection method implemented by using a traditional comparator.

图4是本发明的四输入端比较器的第一实施例的电路图。FIG. 4 is a circuit diagram of a first embodiment of the four-input comparator of the present invention.

图5是本发明的四输入端比较器的第二实施例的电路图。FIG. 5 is a circuit diagram of a second embodiment of the four-input comparator of the present invention.

图6是本发明的四输入端比较器的示意图。FIG. 6 is a schematic diagram of a four-input comparator of the present invention.

图7是本发明的四输入端比较器的第三实施例的电路图。FIG. 7 is a circuit diagram of a third embodiment of the four-input comparator of the present invention.

图8是采用本发明实现多节电池电压检测方式的示意图。Fig. 8 is a schematic diagram of a multi-cell battery voltage detection method implemented by the present invention.

图9是图7比较器翻转过程中各个电平变化的示意图。FIG. 9 is a schematic diagram of each level change during the inversion process of the comparator in FIG. 7 .

图10是本发明的四输入端比较器的第四实施例的电路图。FIG. 10 is a circuit diagram of a fourth embodiment of the four-input comparator of the present invention.

图11是本发明的四输入端比较器的第五实施例的电路图。FIG. 11 is a circuit diagram of a fifth embodiment of the four-input comparator of the present invention.

图12是本发明的四输入端比较器的第六实施例的电路图。FIG. 12 is a circuit diagram of a sixth embodiment of the four-input comparator of the present invention.

图13是本发明的四输入端比较器的第七实施例的电路图。FIG. 13 is a circuit diagram of a seventh embodiment of the four-input comparator of the present invention.

图14是本发明的四输入端比较器的第八实施例的电路图。FIG. 14 is a circuit diagram of an eighth embodiment of the four-input comparator of the present invention.

图15是本发明的四输入端比较器的第九实施例的电路图。FIG. 15 is a circuit diagram of a ninth embodiment of the four-input comparator of the present invention.

图16是本发明的四输入端比较器的第十实施例的电路图。Fig. 16 is a circuit diagram of a tenth embodiment of the four-input comparator of the present invention.

具体实施方式 Detailed ways

下面结合附图和实施例对本发明作进一步的描述。The present invention will be further described below in conjunction with the accompanying drawings and embodiments.

四输入端比较器的第一实施例A first embodiment of a four-input comparator

图4示出了本发明的四输入端比较器的第一实施例的电路。请参见图4,本实施例的四输入端比较器包括:第一MOS管M1、第二MOS管M2、第三MOS管M3和第四MOS管M4。FIG. 4 shows the circuit of a first embodiment of the four-input comparator of the present invention. Referring to FIG. 4 , the four-input comparator in this embodiment includes: a first MOS transistor M1 , a second MOS transistor M2 , a third MOS transistor M3 and a fourth MOS transistor M4 .

第一MOS管M1的栅极连接第一输入电压Vin,第二MOS管M2的栅极连接第二输入电压Vip,第一MOS管M1的源极连接第三输入电压V1,第二MOS管M2的源极连接第四输入电压V2。The gate of the first MOS transistor M1 is connected to the first input voltage V in , the gate of the second MOS transistor M2 is connected to the second input voltage V ip , the source of the first MOS transistor M1 is connected to the third input voltage V1 , and the second MOS transistor M2 The source of the transistor M2 is connected to the fourth input voltage V2.

第三MOS管M3和第四MOS管M4构成电流镜的连接方式。具体而言,第三MOS管M3的栅极和漏极短接(在图4中标注为用N1连线M3的栅极和漏极,从而构成二极管连接方式),第三MOS管M3的源极连接电源电压VDD,第三MOS管M3的漏极连接第一MOS管M1的漏极。第四MOS管M4的栅极和第三MOS管M3的栅极相连,第四MOS管M4的源极连接电源电压VDD,第四MOS管M4的漏极连接第二MOS管M2的漏极,而且第四MOS管M4的漏极的输出就是比较器的输出(在图4中标注为由N2引出比较器的输出)。The connection mode of the third MOS transistor M3 and the fourth MOS transistor M4 constitutes a current mirror. Specifically, the gate and drain of the third MOS transistor M3 are short-circuited (marked in FIG. 4 as using N1 to connect the gate and drain of M3 to form a diode connection), and the source of the third MOS transistor M3 The pole is connected to the power supply voltage VDD, and the drain of the third MOS transistor M3 is connected to the drain of the first MOS transistor M1. The gate of the fourth MOS transistor M4 is connected to the gate of the third MOS transistor M3, the source of the fourth MOS transistor M4 is connected to the power supply voltage VDD, the drain of the fourth MOS transistor M4 is connected to the drain of the second MOS transistor M2, Moreover, the output of the drain of the fourth MOS transistor M4 is the output of the comparator (marked as the output of the comparator derived from N2 in FIG. 4 ).

对于四输入端比较器而言,以上的电路已经可以构成一个最基本的四输入端比较器。为了更好的实现其效果,在上述电路的基础上还可以增加一个第五MOS管M5和一个电流源Ib,第五MOS管M5的栅极连接第四MOS管M4的漏极(在图4中示为连接N2),第五MOS管M5的源极连接电源电压VDD。第五MOS管M5的漏极连接电流源Ib,且漏极引出为比较器的输出(比较器的输出在图4中标注为Vout),电流源Ib的另一端接地。For the four-input comparator, the above circuit can already constitute a basic four-input comparator. In order to better realize its effect, a fifth MOS transistor M5 and a current source Ib can also be added on the basis of the above circuit, and the gate of the fifth MOS transistor M5 is connected to the drain of the fourth MOS transistor M4 (in FIG. 4 is connected to N2), and the source of the fifth MOS transistor M5 is connected to the power supply voltage VDD. The drain of the fifth MOS transistor M5 is connected to the current source I b , and the drain is drawn out as the output of the comparator (the output of the comparator is marked as V out in FIG. 4 ), and the other end of the current source I b is grounded.

在一种较佳的实施方式中,第一MOS管M1和第二MOS管M2的尺寸相同,第三MOS管M3和第四MOS管M4的尺寸相同。In a preferred implementation manner, the first MOS transistor M1 and the second MOS transistor M2 have the same size, and the third MOS transistor M3 and the fourth MOS transistor M4 have the same size.

这种四输入端比较器的表现形式如图6所示,其除了输入电压Vin和Vip之外,还有输入电压V1和V2,这是本发明相对传统比较器所增加的两个输入端。这种四输入端比较器是对Vin-V1和Vip-V2两个电压差的比较,当Vin-V1=Vip-V2时,比较器输出电压Vout翻转。The form of expression of this four-input terminal comparator is shown in Figure 6, and it has input voltage V1 and V2 besides input voltage V in and V ip , and this is the two input that the present invention increases compared to traditional comparator end. This four-input comparator compares two voltage differences between V in -V1 and V ip -V2. When V in -V1=V ip -V2, the output voltage V out of the comparator is reversed.

四输入端比较器的第二实施例Second embodiment of the four-input comparator

图5示出了本发明的四输入端比较器的第二实施例的电路。请参见图5,本实施例的四输入端比较器包括:第一MOS管M1、第二MOS管M2、第三MOS管M3、第四MOS管M4以及两个电阻R1和R2。FIG. 5 shows the circuit of a second embodiment of the four-input comparator of the present invention. Referring to FIG. 5 , the four-input comparator in this embodiment includes: a first MOS transistor M1 , a second MOS transistor M2 , a third MOS transistor M3 , a fourth MOS transistor M4 and two resistors R1 and R2 .

第一MOS管M1的栅极连接第一输入电压Vin,第二MOS管M2的栅极连接第二输入电压Vip,第一MOS管M1的源极通过电阻R1连接第三输入电压V1,第二MOS管M2的源极通过电阻R2连接第四输入电压V2。The gate of the first MOS transistor M1 is connected to the first input voltage V in , the gate of the second MOS transistor M2 is connected to the second input voltage V ip , the source of the first MOS transistor M1 is connected to the third input voltage V1 through the resistor R1, The source of the second MOS transistor M2 is connected to the fourth input voltage V2 through the resistor R2.

第三MOS管M3和第四MOS管M4构成电流镜的连接方式。具体而言,第三MOS管M3的栅极和漏极短接(在图5中标注为用N1连线M3的栅极和漏极,从而构成二极管连接方式),第三MOS管M3的源极连接电源电压VDD,第三MOS管M3的漏极连接第一MOS管M1的漏极。第四MOS管M4的栅极和第三MOS管M3的栅极相连,第四MOS管M4的源极连接电源电压VDD,第四MOS管M4的漏极连接第二MOS管M2的漏极,而且第四MOS管M4的漏极的输出就是比较器的输出(在图5中标注为由N2引出比较器的输出)。The connection mode of the third MOS transistor M3 and the fourth MOS transistor M4 constitutes a current mirror. Specifically, the gate and drain of the third MOS transistor M3 are short-circuited (marked in FIG. 5 as using N1 to connect the gate and drain of M3 to form a diode connection), and the source of the third MOS transistor M3 The pole is connected to the power supply voltage VDD, and the drain of the third MOS transistor M3 is connected to the drain of the first MOS transistor M1. The gate of the fourth MOS transistor M4 is connected to the gate of the third MOS transistor M3, the source of the fourth MOS transistor M4 is connected to the power supply voltage VDD, the drain of the fourth MOS transistor M4 is connected to the drain of the second MOS transistor M2, Moreover, the output of the drain of the fourth MOS transistor M4 is the output of the comparator (marked as the output of the comparator derived from N2 in FIG. 5 ).

对于四输入端比较器而言,以上的电路已经可以构成一个最基本的四输入端比较器。为了更好的实现其效果,在上述电路的基础上还可以增加一个第五MOS管M5和一个电流源Ib,第五MOS管M5的栅极连接第四MOS管M4的漏极(在图5中示为连接N2),第五MOS管M5的源极连接电源电压VDD。第五MOS管M5的漏极连接电流源Ib,且漏极引出为比较器的输出(比较器的输出在图5中标注为Vout),电流源Ib的另一端接地。For the four-input comparator, the above circuit can already constitute a basic four-input comparator. In order to better realize its effect, a fifth MOS transistor M5 and a current source Ib can also be added on the basis of the above circuit, and the gate of the fifth MOS transistor M5 is connected to the drain of the fourth MOS transistor M4 (in FIG. 5 is connected to N2), and the source of the fifth MOS transistor M5 is connected to the power supply voltage VDD. The drain of the fifth MOS transistor M5 is connected to the current source I b , and the drain is drawn out as the output of the comparator (the output of the comparator is marked as V out in FIG. 5 ), and the other end of the current source I b is grounded.

在一种较佳的实施方式中,第一MOS管M1和第二MOS管M2的尺寸相同,第三MOS管M3和第四MOS管M4的尺寸相同。In a preferred implementation manner, the first MOS transistor M1 and the second MOS transistor M2 have the same size, and the third MOS transistor M3 and the fourth MOS transistor M4 have the same size.

在一种较佳的实施方式中,电阻R1和R2的阻值相同。In a preferred embodiment, the resistance values of the resistors R1 and R2 are the same.

这种四输入端比较器的表现形式如图6所示,其除了输入电压Vin和Vip之外,还有输入电压V1和V2,这是本发明相对传统比较器所增加的两个输入端。这种四输入端比较器是对Vin-V1和Vip-V2两个电压差的比较,当Vin-V1=Vip-V2时,比较器输出电压Vout翻转。The form of expression of this four-input terminal comparator is shown in Figure 6, and it has input voltage V1 and V2 besides input voltage V in and V ip , and this is the two input that the present invention increases compared to traditional comparator end. This four-input comparator compares two voltage differences between V in -V1 and V ip -V2. When V in -V1=V ip -V2, the output voltage V out of the comparator is reversed.

四输入端比较器的第三实施例A third embodiment of a four-input comparator

图7示出了本发明的四输入端比较器的第三实施例的电路。请参见图7,本实施例的四输入端比较器包括:第一MOS管M1、第二MOS管M2、第三MOS管M3和第四MOS管M4。FIG. 7 shows the circuit of the third embodiment of the four-input comparator of the present invention. Referring to FIG. 7 , the four-input comparator in this embodiment includes: a first MOS transistor M1 , a second MOS transistor M2 , a third MOS transistor M3 and a fourth MOS transistor M4 .

第一MOS管M1的栅极连接第一输入电压Vin,第二MOS管M2的栅极连接第二输入电压Vip,第一MOS管M1的源极接地(Vgnd),第二MOS管M2的源极连接第四输入电压V2。The gate of the first MOS transistor M1 is connected to the first input voltage V in , the gate of the second MOS transistor M2 is connected to the second input voltage V ip , the source of the first MOS transistor M1 is grounded (V gnd ), and the second MOS transistor M2 The source of M2 is connected to the fourth input voltage V2.

第三MOS管M3和第四MOS管M4构成电流镜的连接方式。具体而言,第三MOS管M3的栅极和漏极短接(在图7中标注为用N1连线M3的栅极和漏极,从而构成二极管连接方式),第三MOS管M3的源极连接电源电压VDD,第三MOS管M3的漏极连接第一MOS管M1的漏极。第四MOS管M4的栅极和第三MOS管M3的栅极相连,第四MOS管M4的源极连接电源电压VDD,第四MOS管M4的漏极连接第二MOS管M2的漏极,而且第四MOS管M4的漏极的输出就是比较器的输出(在图7中标注为由N2引出比较器的输出)。The connection mode of the third MOS transistor M3 and the fourth MOS transistor M4 constitutes a current mirror. Specifically, the gate and drain of the third MOS transistor M3 are short-circuited (marked in FIG. 7 as using N1 to connect the gate and drain of M3 to form a diode connection), and the source of the third MOS transistor M3 The pole is connected to the power supply voltage VDD, and the drain of the third MOS transistor M3 is connected to the drain of the first MOS transistor M1. The gate of the fourth MOS transistor M4 is connected to the gate of the third MOS transistor M3, the source of the fourth MOS transistor M4 is connected to the power supply voltage VDD, the drain of the fourth MOS transistor M4 is connected to the drain of the second MOS transistor M2, Moreover, the output of the drain of the fourth MOS transistor M4 is the output of the comparator (marked as the output of the comparator derived from N2 in FIG. 7 ).

对于四输入端比较器而言,以上的电路已经可以构成一个最基本的四输入端比较器。为了更好的实现其效果,在上述电路的基础上还可以增加一个第五MOS管M5和一个电流源Ib,第五MOS管M5的栅极连接第四MOS管M4的漏极(在图7中示为连接N2),第五MOS管M5的源极连接电源电压VDD。第五MOS管M5的漏极连接电流源Ib,且漏极引出为比较器的输出(比较器的输出在图7中标注为Vout),电流源Ib的另一端接地。For the four-input comparator, the above circuit can already constitute a basic four-input comparator. In order to better realize its effect, a fifth MOS transistor M5 and a current source Ib can also be added on the basis of the above circuit, and the gate of the fifth MOS transistor M5 is connected to the drain of the fourth MOS transistor M4 (in FIG. 7 shows that it is connected to N2), and the source of the fifth MOS transistor M5 is connected to the power supply voltage VDD. The drain of the fifth MOS transistor M5 is connected to the current source I b , and the drain is drawn out as the output of the comparator (the output of the comparator is marked as V out in FIG. 7 ), and the other end of the current source I b is grounded.

在一种较佳的实施方式中,第一MOS管M1和第二MOS管M2的尺寸相同,第三MOS管M3和第四MOS管M4的尺寸相同。In a preferred implementation manner, the first MOS transistor M1 and the second MOS transistor M2 have the same size, and the third MOS transistor M3 and the fourth MOS transistor M4 have the same size.

和图4的第一实施例相比,本实施例唯一的区别在于第一MOS管M1的源极接地而不是图4所示的接第三输入电压V1。在实际应用中,可将第一MOS管M1的栅极连接基准电压VrefCompared with the first embodiment in FIG. 4 , the only difference of this embodiment is that the source of the first MOS transistor M1 is grounded instead of the third input voltage V1 as shown in FIG. 4 . In practical applications, the gate of the first MOS transistor M1 may be connected to the reference voltage V ref .

因此第一实施例中Vin-V1=Vip-V2的等式就可以简化为Vref=Vip-V2,因此只要提供一个稳定的V2电压,就可以将高电压Vip与低电压Vref进行直接比较,如图7所示。Therefore, the equation of V in -V1=V ip -V2 in the first embodiment can be simplified as V ref =V ip -V2, so as long as a stable V2 voltage is provided, the high voltage V ip and the low voltage V ref for direct comparison, as shown in Figure 7.

在图7所示的电路中,当Vip-V2>Vref-Vgnd时,流过第一MOS管M1的电流比流过第二MOS管M2的电流小,第四MOS管M4镜像第三MOS管M3的电流,所以第四MOS管M4的电流比第二MOS管M2的电流小,N2点的电压被下拉,第五MOS管M5强导通,Vout输出高电平VDD。In the circuit shown in Figure 7, when V ip -V 2 >V ref -V gnd , the current flowing through the first MOS transistor M1 is smaller than the current flowing through the second MOS transistor M2, and the fourth MOS transistor M4 mirrors The current of the third MOS transistor M3, so the current of the fourth MOS transistor M4 is smaller than the current of the second MOS transistor M2, the voltage of the point N2 is pulled down, the fifth MOS transistor M5 is strongly turned on, and V out outputs a high level VDD.

当Vip-V2=Vref-Vgnd时,流过第一MOS管M1的电流等于流过第二MOS管M2的电流,第四MOS管M4镜像第三MOS管M3的电流,所以第四MOS管M4的电流等于第二MOS管M2的电流,N2点电压处于中间状态,第五MOS管M5电流等于Ib,Vout开始由高电平VDD往低电平Vgnd转变。When V ip -V 2 =V ref -V gnd , the current flowing through the first MOS transistor M1 is equal to the current flowing through the second MOS transistor M2, and the fourth MOS transistor M4 mirrors the current of the third MOS transistor M3, so the first MOS transistor M3 The current of the fourth MOS transistor M4 is equal to the current of the second MOS transistor M2, the voltage at point N2 is in an intermediate state, the current of the fifth MOS transistor M5 is equal to I b , and V out starts to change from a high level VDD to a low level V gnd .

当Vip-V2<Vref-Vgnd时,流过第一MOS管M1的电流大于流过第二MOS管M2的电流,第四MOS管M4镜像第三MOS管M3的电流,所以第四MOS管M4的电流大于第二MOS管M2的电流,N2点的电压被拉高到VDD,第五MOS管M5关闭,Vout输出低电平VgndWhen V ip -V 2 <V ref -V gnd , the current flowing through the first MOS transistor M1 is greater than the current flowing through the second MOS transistor M2, and the fourth MOS transistor M4 mirrors the current of the third MOS transistor M3, so the first The current of the fourth MOS transistor M4 is greater than the current of the second MOS transistor M2, the voltage of the point N2 is pulled up to VDD, the fifth MOS transistor M5 is turned off, and V out outputs a low level V gnd .

比较器翻转过程中各个电平的变化如图9所示。The changes of each level during the inversion process of the comparator are shown in Fig. 9 .

对本实施例进行进一步的延伸可实现多节电池电压的检测。在图8中,VC1~VC4分别代表四节电池的正输入端,Vd1~Vd4分别代表四节电池各自的分压,Vref代表基准电压,满足以下关系式时比较器翻转:A further extension of this embodiment can realize the detection of the voltage of multiple batteries. In Figure 8, VC1~VC4 represent the positive input terminals of the four batteries, Vd1~Vd4 respectively represent the divided voltages of the four batteries, V ref represents the reference voltage, and the comparator flips when the following relationship is satisfied:

Vref-Vgnd=Vd4-Vgnd=Vd3-Vc4=Vd2-Vc3=Vd1-Vc2 V ref -V gnd =V d4 -V gnd =V d3 -V c4 =V d2 -V c3 =V d1 -V c2

相比传统比较器的实现方法,本发明可以直接将各串的电池电压与低压下的同一个基准电压进行比较,所以只需要一个基准电压源电路,节省了多个基准源,从而节省了芯片成本,提高了电路性能。Compared with the implementation method of the traditional comparator, the present invention can directly compare the battery voltage of each string with the same reference voltage under low voltage, so only one reference voltage source circuit is needed, saving multiple reference sources, thereby saving chips cost and improves circuit performance.

四输入端比较器的第四实施例A fourth embodiment of a four-input comparator

图10示出了本发明的四输入端比较器的第四实施例的电路。请参见图10,本实施例的四输入端比较器包括:第一MOS管M1、第二MOS管M2、第三MOS管M3、第四MOS管M4以及电阻R1和R2。FIG. 10 shows the circuit of the fourth embodiment of the four-input comparator of the present invention. Referring to FIG. 10 , the four-input comparator in this embodiment includes: a first MOS transistor M1 , a second MOS transistor M2 , a third MOS transistor M3 , a fourth MOS transistor M4 , and resistors R1 and R2 .

第一MOS管M1的栅极连接第一输入电压Vin(在实际应用中可令第一MOS管M1的栅极连接基准电压Vref),第二MOS管M2的栅极连接第二输入电压Vip,第一MOS管M1的源极通过电阻R1接地(Vgnd),第二MOS管M2的源极通过电阻R2连接第四输入电压V2。The gate of the first MOS transistor M1 is connected to the first input voltage V in (in practical applications, the gate of the first MOS transistor M1 can be connected to the reference voltage V ref ), and the gate of the second MOS transistor M2 is connected to the second input voltage V ip , the source of the first MOS transistor M1 is grounded (V gnd ) through the resistor R1, and the source of the second MOS transistor M2 is connected to the fourth input voltage V2 through the resistor R2.

第三MOS管M3和第四MOS管M4构成电流镜的连接方式。具体而言,第三MOS管M3的栅极和漏极短接(在图10中标注为用N1连线M3的栅极和漏极,从而构成二极管连接方式),第三MOS管M3的源极连接电源电压VDD,第三MOS管M3的漏极连接第一MOS管M1的漏极。第四MOS管M4的栅极和第三MOS管M3的栅极相连,第四MOS管M4的源极连接电源电压VDD,第四MOS管M4的漏极连接第二MOS管M2的漏极,而且第四MOS管M4的漏极的输出就是比较器的输出(在图10中标注为由N2引出比较器的输出)。The connection mode of the third MOS transistor M3 and the fourth MOS transistor M4 constitutes a current mirror. Specifically, the gate and drain of the third MOS transistor M3 are short-circuited (marked in FIG. 10 as connecting the gate and drain of M3 with N1 to form a diode connection), and the source of the third MOS transistor M3 The pole is connected to the power supply voltage VDD, and the drain of the third MOS transistor M3 is connected to the drain of the first MOS transistor M1. The gate of the fourth MOS transistor M4 is connected to the gate of the third MOS transistor M3, the source of the fourth MOS transistor M4 is connected to the power supply voltage VDD, the drain of the fourth MOS transistor M4 is connected to the drain of the second MOS transistor M2, Moreover, the output of the drain of the fourth MOS transistor M4 is the output of the comparator (marked as the output of the comparator derived from N2 in FIG. 10 ).

对于四输入端比较器而言,以上的电路已经可以构成一个最基本的四输入端比较器。为了更好的实现其效果,在上述电路的基础上还可以增加一个第五MOS管M5和一个电流源Ib,第五MOS管M5的栅极连接第四MOS管M4的漏极(在图10中示为连接N2),第五MOS管M5的源极连接电源电压VDD。第五MOS管M5的漏极连接电流源Ib,且漏极引出为比较器的输出(比较器的输出在图10中标注为Vout),电流源Ib的另一端接地。For the four-input comparator, the above circuit can already constitute a basic four-input comparator. In order to better realize its effect, a fifth MOS transistor M5 and a current source Ib can also be added on the basis of the above circuit, and the gate of the fifth MOS transistor M5 is connected to the drain of the fourth MOS transistor M4 (in FIG. 10 is connected to N2), and the source of the fifth MOS transistor M5 is connected to the power supply voltage VDD. The drain of the fifth MOS transistor M5 is connected to the current source I b , and the drain is taken out as the output of the comparator (the output of the comparator is marked as V out in FIG. 10 ), and the other end of the current source I b is grounded.

在一种较佳的实施方式中,第一MOS管M1和第二MOS管M2的尺寸相同,第三MOS管M3和第四MOS管M4的尺寸相同。In a preferred implementation manner, the first MOS transistor M1 and the second MOS transistor M2 have the same size, and the third MOS transistor M3 and the fourth MOS transistor M4 have the same size.

在一种较佳的实施方式中,电阻R1和R2的阻值相同。In a preferred embodiment, the resistance values of the resistors R1 and R2 are the same.

四输入端比较器的第五实施例Fifth Embodiment of Four-Input Comparator

图11示出了本发明的四输入端比较器的第五实施例的电路。请参见图11,本实施例的四输入端比较器相对于前述实施例的四输入端比较器,其输入对管(也就是第一MOS管M1和第二MOS管M2)是PMOS管,而负载对管(也就是第三MOS管M3和第四MOS管M4)是NMOS管。FIG. 11 shows the circuit of the fifth embodiment of the four-input comparator of the present invention. Please refer to FIG. 11. Compared with the four-input comparator of the previous embodiment, the four-input comparator of this embodiment has an input pair of transistors (that is, the first MOS transistor M1 and the second MOS transistor M2) that are PMOS transistors, and The load pair transistors (that is, the third MOS transistor M3 and the fourth MOS transistor M4 ) are NMOS transistors.

本实施例的四输入端比较器包括:第一MOS管M1、第二MOS管M2、第三MOS管M3、第四MOS管M4、电阻R1和R2。The four-input comparator in this embodiment includes: a first MOS transistor M1 , a second MOS transistor M2 , a third MOS transistor M3 , a fourth MOS transistor M4 , and resistors R1 and R2 .

第一MOS管M1的栅极连接第一输入电压Vin,第二MOS管M2的栅极连接第二输入电压Vip,第一MOS管M1的源极通过电阻R1连接第三输入电压V1,第二MOS管M2的源极通过电阻R2连接第四输入电压V2。The gate of the first MOS transistor M1 is connected to the first input voltage V in , the gate of the second MOS transistor M2 is connected to the second input voltage V ip , the source of the first MOS transistor M1 is connected to the third input voltage V1 through the resistor R1, The source of the second MOS transistor M2 is connected to the fourth input voltage V2 through the resistor R2.

第三MOS管M3和第四MOS管M4构成电流镜的连接方式。具体而言,第三MOS管M3的栅极和漏极短接(在图11中标注为用N1连线M3的栅极和漏极,从而构成二极管连接方式),第三MOS管M3的源极接地(Vgnd),第三MOS管M3的漏极连接第一MOS管M1的漏极。第四MOS管M4的栅极和第三MOS管M3的栅极相连,第四MOS管M4的源极接地(Vgnd),第四MOS管M4的漏极连接第二MOS管M2的漏极,而且第四MOS管M4的漏极的输出就是比较器的输出(在图11中标注为由N2引出比较器的输出)。The connection mode of the third MOS transistor M3 and the fourth MOS transistor M4 constitutes a current mirror. Specifically, the gate and drain of the third MOS transistor M3 are short-circuited (marked in FIG. 11 as connecting the gate and drain of M3 with N1 to form a diode connection), and the source of the third MOS transistor M3 The electrode is grounded (V gnd ), and the drain of the third MOS transistor M3 is connected to the drain of the first MOS transistor M1. The gate of the fourth MOS transistor M4 is connected to the gate of the third MOS transistor M3, the source of the fourth MOS transistor M4 is grounded (V gnd ), and the drain of the fourth MOS transistor M4 is connected to the drain of the second MOS transistor M2 , and the output of the drain of the fourth MOS transistor M4 is the output of the comparator (marked as the output of the comparator drawn from N2 in FIG. 11 ).

对于四输入端比较器而言,以上的电路已经可以构成一个最基本的四输入端比较器。为了更好的实现其效果,在上述电路的基础上还可以增加一个第五MOS管M5和一个电流源Ib,第五MOS管M5的栅极连接第四MOS管M4的漏极(在图11中示为连接N2),第五MOS管M5的源极接地。第五MOS管M5的漏极连接电流源Ib,且漏极引出为比较器的输出(比较器的输出在图11中标注为Vout),电流源Ib的另一端接电源电压VDD。For the four-input comparator, the above circuit can already constitute a basic four-input comparator. In order to better realize its effect, a fifth MOS transistor M5 and a current source Ib can also be added on the basis of the above circuit, and the gate of the fifth MOS transistor M5 is connected to the drain of the fourth MOS transistor M4 (in FIG. 11 is connected to N2), and the source of the fifth MOS transistor M5 is grounded. The drain of the fifth MOS transistor M5 is connected to the current source I b , and the drain is drawn out as the output of the comparator (the output of the comparator is marked as V out in FIG. 11 ), and the other end of the current source I b is connected to the power supply voltage VDD.

在一种较佳的实施方式中,第一MOS管M1和第二MOS管M2的尺寸相同,第三MOS管M3和第四MOS管M4的尺寸相同。In a preferred implementation manner, the first MOS transistor M1 and the second MOS transistor M2 have the same size, and the third MOS transistor M3 and the fourth MOS transistor M4 have the same size.

在一种较佳的实施方式中,电阻R1和R2的阻值相同。In a preferred embodiment, the resistance values of the resistors R1 and R2 are the same.

四输入端比较器的第六实施例Sixth Embodiment of Four-Input Comparator

图12示出了本发明的四输入端比较器的第六实施例。请参见图12,本实施例的四输入端比较器和第五实施例一样,其输入对管(也就是第一MOS管M1和第二MOS管M2)是PMOS管,而负载对管(也就是第三MOS管M3和第四MOS管M4)是NMOS管。FIG. 12 shows a sixth embodiment of the four-input comparator of the present invention. Please refer to FIG. 12, the four-input terminal comparator of this embodiment is the same as the fifth embodiment, its input pair of transistors (that is, the first MOS transistor M1 and the second MOS transistor M2) are PMOS transistors, and the load pair of transistors (also That is, the third MOS transistor M3 and the fourth MOS transistor M4) are NMOS transistors.

本实施例的四输入端比较器包括:第一MOS管M1、第二MOS管M2、第三MOS管M3、第四MOS管M4。The four-input comparator in this embodiment includes: a first MOS transistor M1, a second MOS transistor M2, a third MOS transistor M3, and a fourth MOS transistor M4.

第一MOS管M1的栅极连接第一输入电压Vin,第二MOS管M2的栅极连接第二输入电压Vip(在实际应用中令第二输入电压Vip为基准电压Vref),第一MOS管M1的源极连接第三输入电压V1,第二MOS管M2的源极连接第四输入电压V2。The gate of the first MOS transistor M1 is connected to the first input voltage V in , the gate of the second MOS transistor M2 is connected to the second input voltage V ip (in practical applications, the second input voltage V ip is set as the reference voltage V ref ), The source of the first MOS transistor M1 is connected to the third input voltage V1, and the source of the second MOS transistor M2 is connected to the fourth input voltage V2.

第三MOS管M3和第四MOS管M4构成电流镜的连接方式。具体而言,第三MOS管M3的栅极和漏极短接(在图12中标注为用N1连线M3的栅极和漏极,从而构成二极管连接方式),第三MOS管M3的源极接地(Vgnd),第三MOS管M3的漏极连接第一MOS管M1的漏极。第四MOS管M4的栅极和第三MOS管M3的栅极相连,第四MOS管M4的源极接地(Vgnd),第四MOS管M4的漏极连接第二MOS管M2的漏极,而且第四MOS管M4的漏极的输出就是比较器的输出(在图12中标注为由N2引出比较器的输出)。The connection mode of the third MOS transistor M3 and the fourth MOS transistor M4 constitutes a current mirror. Specifically, the gate and drain of the third MOS transistor M3 are short-circuited (marked in FIG. 12 as using N1 to connect the gate and drain of M3 to form a diode connection), and the source of the third MOS transistor M3 The electrode is grounded (V gnd ), and the drain of the third MOS transistor M3 is connected to the drain of the first MOS transistor M1. The gate of the fourth MOS transistor M4 is connected to the gate of the third MOS transistor M3, the source of the fourth MOS transistor M4 is grounded (V gnd ), and the drain of the fourth MOS transistor M4 is connected to the drain of the second MOS transistor M2 , and the output of the drain of the fourth MOS transistor M4 is the output of the comparator (marked as the output of the comparator drawn from N2 in FIG. 12 ).

对于四输入端比较器而言,以上的电路已经可以构成一个最基本的四输入端比较器。为了更好的实现其效果,在上述电路的基础上还可以增加一个第五MOS管M5和一个电流源Ib,第五MOS管M5的栅极连接第四MOS管M4的漏极(在图12中示为连接N2),第五MOS管M5的源极接地。第五MOS管M5的漏极连接电流源Ib,且漏极引出为比较器的输出(比较器的输出在图12中标注为Vout),电流源Ib的另一端接电源VDD。For the four-input comparator, the above circuit can already constitute a basic four-input comparator. In order to better realize its effect, a fifth MOS transistor M5 and a current source Ib can also be added on the basis of the above circuit, and the gate of the fifth MOS transistor M5 is connected to the drain of the fourth MOS transistor M4 (in FIG. 12 is connected to N2), and the source of the fifth MOS transistor M5 is grounded. The drain of the fifth MOS transistor M5 is connected to the current source I b , and the drain is drawn out as the output of the comparator (the output of the comparator is marked as V out in FIG. 12 ), and the other end of the current source I b is connected to the power supply VDD.

在一种较佳的实施方式中,第一MOS管M1和第二MOS管M2的尺寸相同,第三MOS管M3和第四MOS管M4的尺寸相同。In a preferred implementation manner, the first MOS transistor M1 and the second MOS transistor M2 have the same size, and the third MOS transistor M3 and the fourth MOS transistor M4 have the same size.

四输入端比较器的第七实施例Seventh Embodiment of Four-Input Comparator

图13示出了本发明的四输入端比较器的第七实施例。请参见图13,本实施例相对于前述实施例的区别在于,用BJT管(三极管)替换了原来的MOS管。Fig. 13 shows a seventh embodiment of the four-input comparator of the present invention. Please refer to FIG. 13 , the difference between this embodiment and the previous embodiments is that the original MOS transistor is replaced with a BJT transistor (transistor).

本实施例的四输入端比较器包括:第一三极管Q1、第二三极管Q2、第三三极管Q3和第四三极管Q4。The four-input comparator in this embodiment includes: a first transistor Q1 , a second transistor Q2 , a third transistor Q3 and a fourth transistor Q4 .

第一三极管Q1的基极连接第一输入电压Vin,第二三极管Q2的基极连接第二输入电压Vip,第一三极管Q1的发射极连接第三输入电压V1,第二三极管Q2的发射极连接第四输入电压V2。The base of the first transistor Q1 is connected to the first input voltage V in , the base of the second transistor Q2 is connected to the second input voltage V ip , the emitter of the first transistor Q1 is connected to the third input voltage V1 , The emitter of the second transistor Q2 is connected to the fourth input voltage V2.

第三三极管管Q3和第四三极管Q4构成电流镜的连接方式。具体而言,第三三极管Q3的基极和集电极短接(在图13中标注为用N1连线Q3的基极和集电极,从而构成二极管连接方式),第三三极管Q3的发射极接电源电压VDD,第三三极管Q3的集电极连接第一三极管Q1的集电极。第四三极管Q4的基极和第三三极管Q3的基极相连,第四三极管Q4的发射极接电源电压VDD,第四三极管Q4的集电极连接第二三极管Q2的集电极,而且第四三极管Q4的集电极的输出就是比较器的输出(在图13中标注为由N2引出比较器的输出)。The connection mode of the third transistor Q3 and the fourth transistor Q4 constitutes a current mirror. Specifically, the base and collector of the third triode Q3 are short-circuited (marked in FIG. 13 as using N1 to connect the base and collector of Q3 to form a diode connection), and the third triode Q3 The emitter of the third transistor Q3 is connected to the power supply voltage VDD, and the collector of the third transistor Q3 is connected to the collector of the first transistor Q1. The base of the fourth transistor Q4 is connected to the base of the third transistor Q3, the emitter of the fourth transistor Q4 is connected to the power supply voltage VDD, and the collector of the fourth transistor Q4 is connected to the second transistor The collector of Q2, and the output of the collector of the fourth transistor Q4 is the output of the comparator (marked as the output of the comparator drawn out by N2 in FIG. 13 ).

对于四输入端比较器而言,以上的电路已经可以构成一个最基本的四输入端比较器。为了更好的实现其效果,在上述电路的基础上还可以增加一个第五三极管Q5和一个电流源Ib,第五三极管Q5的基极连接第四三极管Q4的集电极(在图13中示为连接N2),第五三极管Q5的发射极接电源电压VDD。第五三极管Q5的集电极连接电流源Ib,且集电极引出为比较器的输出(比较器的输出在图13中标注为Vout),电流源Ib的另一端接地。For the four-input comparator, the above circuit can already constitute a basic four-input comparator. In order to better realize its effect, a fifth transistor Q5 and a current source I b can be added on the basis of the above circuit, and the base of the fifth transistor Q5 is connected to the collector of the fourth transistor Q4 (shown as being connected to N2 in FIG. 13 ), the emitter of the fifth transistor Q5 is connected to the power supply voltage VDD. The collector of the fifth transistor Q5 is connected to the current source I b , and the collector is drawn out as the output of the comparator (the output of the comparator is marked as V out in FIG. 13 ), and the other end of the current source I b is grounded.

在一种较佳的实施方式中,第一三极管Q1和第二三极管Q2的尺寸相同,第三三极管Q3和第四三极管Q4的尺寸相同。In a preferred implementation manner, the first triode Q1 and the second triode Q2 have the same size, and the third triode Q3 and the fourth triode Q4 have the same size.

四输入端比较器的第八实施例Eighth embodiment of a four-input comparator

图14示出了本发明的四输入端比较器的第八实施例。请参见图14,和图13的实施例一样,本实施例用BJT管(三极管)替换了原来的MOS管。FIG. 14 shows an eighth embodiment of the four-input comparator of the present invention. Please refer to FIG. 14 , same as the embodiment in FIG. 13 , this embodiment replaces the original MOS transistor with a BJT transistor (transistor).

本实施例的四输入端比较器包括:第一三极管Q1、第二三极管Q2、第三三极管Q3、第四三极管Q4、电阻R1和R2。The four-input comparator in this embodiment includes: a first transistor Q1 , a second transistor Q2 , a third transistor Q3 , a fourth transistor Q4 , and resistors R1 and R2 .

第一三极管Q1的基极连接第一输入电压Vin,第二三极管Q2的基极连接第二输入电压Vip,第一三极管Q1的发射极通过电阻R1连接第三输入电压V1,第二三极管Q2的发射极通过电阻R2连接第四输入电压V2。The base of the first transistor Q1 is connected to the first input voltage V in , the base of the second transistor Q2 is connected to the second input voltage V ip , and the emitter of the first transistor Q1 is connected to the third input through the resistor R1 Voltage V1, the emitter of the second transistor Q2 is connected to the fourth input voltage V2 through the resistor R2.

第三三极管管Q3和第四三极管Q4构成电流镜的连接方式。具体而言,第三三极管Q3的基极和集电极短接(在图14中标注为用N1连线Q3的基极和集电极,从而构成二极管连接方式),第三三极管Q3的发射极接电源电压VDD,第三三极管Q3的集电极连接第一三极管Q1的集电极。第四三极管Q4的基极和第三三极管Q3的基极相连,第四三极管Q4的发射极接电源电压VDD,第四三极管Q4的集电极连接第二三极管Q2的集电极,而且第四三极管Q4的集电极的输出就是比较器的输出(在图14中标注为由N2引出比较器的输出)。The connection mode of the third transistor Q3 and the fourth transistor Q4 constitutes a current mirror. Specifically, the base and collector of the third triode Q3 are short-circuited (marked in FIG. 14 as connecting the base and collector of Q3 with N1 to form a diode connection), and the third triode Q3 The emitter of the third transistor Q3 is connected to the power supply voltage VDD, and the collector of the third transistor Q3 is connected to the collector of the first transistor Q1. The base of the fourth transistor Q4 is connected to the base of the third transistor Q3, the emitter of the fourth transistor Q4 is connected to the power supply voltage VDD, and the collector of the fourth transistor Q4 is connected to the second transistor The collector of Q2, and the output of the collector of the fourth transistor Q4 is the output of the comparator (marked as the output of the comparator drawn by N2 in FIG. 14 ).

对于四输入端比较器而言,以上的电路已经可以构成一个最基本的四输入端比较器。为了更好的实现其效果,在上述电路的基础上还可以增加一个第五三极管Q5和一个电流源Ib,第五三极管Q5的基极连接第四三极管Q4的集电极(在图14中示为连接N2),第五三极管Q5的发射极接电源电压VDD。第五三极管Q5的集电极连接电流源Ib,且集电极引出为比较器的输出(比较器的输出在图14中标注为Vout),电流源Ib的另一端接地。For the four-input comparator, the above circuit can already constitute a basic four-input comparator. In order to better realize its effect, a fifth transistor Q5 and a current source I b can be added on the basis of the above circuit, and the base of the fifth transistor Q5 is connected to the collector of the fourth transistor Q4 (shown as being connected to N2 in FIG. 14 ), the emitter of the fifth transistor Q5 is connected to the power supply voltage VDD. The collector of the fifth transistor Q5 is connected to the current source I b , and the collector is drawn out as the output of the comparator (the output of the comparator is marked as V out in FIG. 14 ), and the other end of the current source I b is grounded.

在一种较佳的实施方式中,第一三极管Q1和第二三极管Q2的尺寸相同,第三三极管Q3和第四三极管Q4的尺寸相同。In a preferred implementation manner, the first triode Q1 and the second triode Q2 have the same size, and the third triode Q3 and the fourth triode Q4 have the same size.

在一种较佳的实施方式中,电阻R1和R2的阻值相同。In a preferred embodiment, the resistance values of the resistors R1 and R2 are the same.

四输入端比较器的第九实施例Ninth Embodiment of Four-Input Comparator

图15示出了本发明的四输入端比较器的第九实施例。请参见图15,本实施例的四输入端比较器包括:第一三极管Q1、第二三极管Q2、第三三极管Q3和第四三极管Q4。FIG. 15 shows a ninth embodiment of the four-input comparator of the present invention. Referring to FIG. 15 , the four-input comparator in this embodiment includes: a first transistor Q1 , a second transistor Q2 , a third transistor Q3 and a fourth transistor Q4 .

第一三极管Q1的基极连接第一输入电压Vin,第二三极管Q2的基极连接第二输入电压Vip(在实际应用中可令第二输入电压为基准电压Vref),第一三极管Q1的发射极连接第三输入电压V1,第二三极管Q2的发射极连接第四输入电压V2。The base of the first transistor Q1 is connected to the first input voltage V in , and the base of the second transistor Q2 is connected to the second input voltage V ip (the second input voltage can be the reference voltage V ref in practical applications) , the emitter of the first transistor Q1 is connected to the third input voltage V1, and the emitter of the second transistor Q2 is connected to the fourth input voltage V2.

第三三极管管Q3和第四三极管Q4构成电流镜的连接方式。具体而言,第三三极管Q3的基极和集电极短接(在图15中标注为用N1连线Q3的基极和集电极,从而构成二极管连接方式),第三三极管Q3的发射极接地(Vgnd),第三三极管Q3的集电极连接第一三极管Q1的集电极。第四三极管Q4的基极和第三三极管Q3的基极相连,第四三极管Q4的发射极接地,第四三极管Q4的集电极连接第二三极管Q2的集电极,而且第四三极管Q4的集电极的输出就是比较器的输出(在图15中标注为由N2引出比较器的输出)。The connection mode of the third transistor Q3 and the fourth transistor Q4 constitutes a current mirror. Specifically, the base and collector of the third triode Q3 are short-circuited (marked in FIG. 15 as connecting the base and collector of Q3 with N1 to form a diode connection), and the third triode Q3 The emitter of the transistor is grounded (V gnd ), and the collector of the third transistor Q3 is connected to the collector of the first transistor Q1. The base of the fourth transistor Q4 is connected to the base of the third transistor Q3, the emitter of the fourth transistor Q4 is grounded, and the collector of the fourth transistor Q4 is connected to the collector of the second transistor Q2. electrode, and the output of the collector of the fourth transistor Q4 is the output of the comparator (marked as the output of the comparator drawn from N2 in FIG. 15 ).

对于四输入端比较器而言,以上的电路已经可以构成一个最基本的四输入端比较器。为了更好的实现其效果,在上述电路的基础上还可以增加一个第五三极管Q5和一个电流源Ib,第五三极管Q5的基极连接第四三极管Q4的集电极(在图15中示为连接N2),第五三极管Q5的发射极接地。第五三极管Q5的集电极连接电流源Ib,且集电极引出为比较器的输出(比较器的输出在图15中标注为Vout),电流源Ib的另一端接电源电压VDD。For the four-input comparator, the above circuit can already constitute a basic four-input comparator. In order to better realize its effect, a fifth transistor Q5 and a current source I b can be added on the basis of the above circuit, and the base of the fifth transistor Q5 is connected to the collector of the fourth transistor Q4 (shown as connection N2 in FIG. 15 ), the emitter of the fifth transistor Q5 is grounded. The collector of the fifth triode Q5 is connected to the current source I b , and the collector is drawn out as the output of the comparator (the output of the comparator is marked as V out in FIG. 15 ), and the other end of the current source I b is connected to the power supply voltage VDD .

在一种较佳的实施方式中,第一三极管Q1和第二三极管Q2的尺寸相同,第三三极管Q3和第四三极管Q4的尺寸相同。In a preferred implementation manner, the first triode Q1 and the second triode Q2 have the same size, and the third triode Q3 and the fourth triode Q4 have the same size.

四输入端比较器的第十实施例Tenth Embodiment of Four-Input Comparator

图16示出了本发明的四输入端比较器的第十实施例。请参见图16,本实施例的四输入端比较器包括:第一三极管Q1、第二三极管Q2、第三三极管Q3、第四三极管Q4、电阻R1和R2。Fig. 16 shows a tenth embodiment of the four-input comparator of the present invention. Referring to FIG. 16 , the four-input comparator in this embodiment includes: a first transistor Q1 , a second transistor Q2 , a third transistor Q3 , a fourth transistor Q4 , and resistors R1 and R2 .

第一三极管Q1的基极连接第一输入电压Vin,第二三极管Q2的基极连接第二输入电压Vip(在实际应用中可令第二输入电压Vip为基准电压Vref),第一三极管Q1的发射极通过电阻R1连接第三输入电压V1,第二三极管Q2的发射极通过电阻R2连接第四输入电压V2。The base of the first transistor Q1 is connected to the first input voltage V in , and the base of the second transistor Q2 is connected to the second input voltage V ip (in practical applications, the second input voltage V ip can be set as the reference voltage V ref ), the emitter of the first transistor Q1 is connected to the third input voltage V1 through the resistor R1, and the emitter of the second transistor Q2 is connected to the fourth input voltage V2 through the resistor R2.

第三三极管管Q3和第四三极管Q4构成电流镜的连接方式。具体而言,第三三极管Q3的基极和集电极短接(在图16中标注为用N1连线Q3的基极和集电极,从而构成二极管连接方式),第三三极管Q3的发射极接地(Vgnd),第三三极管Q3的集电极连接第一三极管Q1的集电极。第四三极管Q4的基极和第三三极管Q3的基极相连,第四三极管Q4的发射极接地,第四三极管Q4的集电极连接第二三极管Q2的集电极,而且第四三极管Q4的集电极的输出就是比较器的输出(在图16中标注为由N2引出比较器的输出)。The connection mode of the third transistor Q3 and the fourth transistor Q4 constitutes a current mirror. Specifically, the base and collector of the third triode Q3 are short-circuited (marked in FIG. 16 as using N1 to connect the base and collector of Q3 to form a diode connection), and the third triode Q3 The emitter of the transistor is grounded (V gnd ), and the collector of the third transistor Q3 is connected to the collector of the first transistor Q1. The base of the fourth transistor Q4 is connected to the base of the third transistor Q3, the emitter of the fourth transistor Q4 is grounded, and the collector of the fourth transistor Q4 is connected to the collector of the second transistor Q2. electrode, and the output of the collector of the fourth transistor Q4 is the output of the comparator (marked as the output of the comparator drawn from N2 in FIG. 16 ).

对于四输入端比较器而言,以上的电路已经可以构成一个最基本的四输入端比较器。为了更好的实现其效果,在上述电路的基础上还可以增加一个第五三极管Q5和一个电流源Ib,第五三极管Q5的基极连接第四三极管Q4的集电极(在图16中示为连接N2),第五三极管Q5的发射极接地。第五三极管Q5的集电极连接电流源Ib,且集电极引出为比较器的输出(比较器的输出在图16中标注为Vout),电流源Ib的另一端接电源电压VDD。For the four-input comparator, the above circuit can already constitute a basic four-input comparator. In order to better realize its effect, a fifth transistor Q5 and a current source I b can be added on the basis of the above circuit, and the base of the fifth transistor Q5 is connected to the collector of the fourth transistor Q4 (shown as connection N2 in FIG. 16 ), the emitter of the fifth transistor Q5 is grounded. The collector of the fifth triode Q5 is connected to the current source I b , and the collector is drawn out as the output of the comparator (the output of the comparator is marked as V out in FIG. 16 ), and the other end of the current source I b is connected to the power supply voltage VDD .

在一种较佳的实施方式中,第一三极管Q1和第二三极管Q2的尺寸相同,第三三极管Q3和第四三极管Q4的尺寸相同。In a preferred implementation manner, the first triode Q1 and the second triode Q2 have the same size, and the third triode Q3 and the fourth triode Q4 have the same size.

在一种较佳的实施方式中,电阻R1和R2的阻值相同。In a preferred embodiment, the resistance values of the resistors R1 and R2 are the same.

综合上述的实施例可以看出,本发明的四输入端比较器的两个输入端是相对于不同的电位,当需要检测的电压的相对电位改变时,对应的基准电压Vref无需改变。在如背景技术所述的多节锂离子电池应用方案等类似的应用场合中,相比传统比较器的实现方法,本发明可以直接将各串的电池电压与低压下的同一个基准电压进行比较,所以只需要一个基准电压源电路,节省了多个基准源,从而节省了芯片成本,提高了电路的性能。From the above embodiments, it can be seen that the two input terminals of the four-input terminal comparator of the present invention are relative to different potentials. When the relative potential of the voltage to be detected changes, the corresponding reference voltage V ref does not need to be changed. In similar applications such as the multi-cell lithium-ion battery application scheme described in the background technology, compared with the implementation method of the traditional comparator, the present invention can directly compare the battery voltage of each string with the same reference voltage under low voltage , so only one reference voltage source circuit is needed, saving multiple reference sources, thereby saving chip cost and improving circuit performance.

上述实施例是提供给本领域普通技术人员来实现或使用本发明的,本领域普通技术人员可在不脱离本发明的发明思想的情况下,对上述实施例做出种种修改或变化,因而本发明的保护范围并不被上述实施例所限,而应该是符合权利要求书提到的创新性特征的最大范围。The above-mentioned embodiments are provided for those of ordinary skill in the art to implement or use the present invention. Those of ordinary skill in the art can make various modifications or changes to the above-mentioned embodiments without departing from the inventive idea of the present invention. Therefore, the present invention The scope of protection of the invention is not limited by the above-mentioned embodiments, but should be the maximum scope consistent with the innovative features mentioned in the claims.

Claims (14)

1.一种四输入端比较器,包括:1. A four-input comparator comprising: 第一MOS管和第二MOS管,其中第一MOS管的栅极连接第一输入电压,第二MOS管的栅极连接第二输入电压;a first MOS transistor and a second MOS transistor, wherein the gate of the first MOS transistor is connected to the first input voltage, and the gate of the second MOS transistor is connected to the second input voltage; 第三MOS管和第四MOS管,其中第三MOS管的栅极和漏极短接,第三MOS管的源极连接电源电压,第三MOS管的漏极连接第一MOS管的漏极,第四MOS管的栅极和第三MOS管的栅极相连,第四MOS管的源极连接电源电压,第四MOS管的漏极连接第二MOS管的漏极且是四输入端比较器的输出;The third MOS transistor and the fourth MOS transistor, wherein the gate and drain of the third MOS transistor are short-circuited, the source of the third MOS transistor is connected to the power supply voltage, and the drain of the third MOS transistor is connected to the drain of the first MOS transistor , the gate of the fourth MOS transistor is connected to the gate of the third MOS transistor, the source of the fourth MOS transistor is connected to the power supply voltage, the drain of the fourth MOS transistor is connected to the drain of the second MOS transistor and is a four-input comparison the output of the device; 第一MOS管的源极连有第一电阻,第二MOS管的源极连有第二电阻,第一电阻的另一端连接第三输入电压,第二电阻的另一端连接第四输入电压。The source of the first MOS transistor is connected to the first resistor, the source of the second MOS transistor is connected to the second resistor, the other end of the first resistor is connected to the third input voltage, and the other end of the second resistor is connected to the fourth input voltage. 2.根据权利要求1所述的四输入端比较器,其特征在于,第一MOS管和第二MOS管的尺寸相同,第三MOS管和第四MOS管的尺寸相同。2. The four-input comparator according to claim 1, wherein the size of the first MOS transistor and the second MOS transistor are the same, and the size of the third MOS transistor and the fourth MOS transistor are the same. 3.根据权利要求1所述的四输入端比较器,其特征在于,该四输入端比较器还包括:3. The four-input comparator according to claim 1, wherein the four-input comparator further comprises: 第五MOS管,其栅极连接第四MOS管的漏极,其源极连接电源电压,其漏极连接一电流源且是四输入端比较器的输出,电流源的另一端接地。The gate of the fifth MOS transistor is connected to the drain of the fourth MOS transistor, the source is connected to the power supply voltage, the drain is connected to a current source which is the output of the four-input comparator, and the other end of the current source is grounded. 4.根据权利要求1所述的四输入端比较器,其特征在于,第三输入电压是地电压。4. The four-input comparator according to claim 1, wherein the third input voltage is a ground voltage. 5.一种四输入端比较器,包括:5. A four-input comparator comprising: 第一MOS管和第二MOS管,其中第一MOS管的栅极连接第一输入电压,第二MOS管的栅极连接第二输入电压;a first MOS transistor and a second MOS transistor, wherein the gate of the first MOS transistor is connected to the first input voltage, and the gate of the second MOS transistor is connected to the second input voltage; 第三MOS管和第四MOS管,其中第三MOS管的漏极和栅极短接,第三MOS管的源极接地,第三MOS管的漏极连接第一MOS管的漏极,第四MOS管的栅极和第三MOS管的栅极相连,第四MOS管的源极接地,第四MOS管的漏极连接第二MOS管的漏极且是四输入端比较器的输出;The third MOS transistor and the fourth MOS transistor, wherein the drain and gate of the third MOS transistor are short-circuited, the source of the third MOS transistor is grounded, the drain of the third MOS transistor is connected to the drain of the first MOS transistor, and the drain of the third MOS transistor is connected to the drain of the first MOS transistor. The gate of the four MOS transistors is connected to the gate of the third MOS transistor, the source of the fourth MOS transistor is grounded, and the drain of the fourth MOS transistor is connected to the drain of the second MOS transistor and is the output of the four-input comparator; 第一MOS管的源极连有第一电阻,第二MOS管的源极连有第二电阻,第一电阻的另一端连接第三输入电压,第二电阻的另一端连接第四输入电压。The source of the first MOS transistor is connected to the first resistor, the source of the second MOS transistor is connected to the second resistor, the other end of the first resistor is connected to the third input voltage, and the other end of the second resistor is connected to the fourth input voltage. 6.根据权利要求5所述的四输入端比较器,其特征在于,第一MOS管和第二MOS管的尺寸相同,第三MOS管和第四MOS管的尺寸相同。6. The four-input comparator according to claim 5, wherein the size of the first MOS transistor and the second MOS transistor are the same, and the size of the third MOS transistor and the fourth MOS transistor are the same. 7.根据权利要求5所述的四输入端比较器,其特征在于,该四输入端比较器还包括:7. The four-input comparator according to claim 5, wherein the four-input comparator further comprises: 第五MOS管,其栅极连接第四MOS管的漏极,其源极接地,其漏极连接一电流源且是四输入端比较器的输出,电流源的另一端接电源电压。The gate of the fifth MOS transistor is connected to the drain of the fourth MOS transistor, the source is grounded, the drain is connected to a current source which is the output of the four-input comparator, and the other end of the current source is connected to the power supply voltage. 8.根据权利要求5所述的四输入端比较器,其特征在于,第二MOS管的栅极连接一基准电压。8. The four-input comparator according to claim 5, wherein the gate of the second MOS transistor is connected to a reference voltage. 9.一种四输入端比较器,包括:9. A four-input comparator comprising: 第一三极管和第二三极管,其中第一三极管的基极连接第一输入电压,第二三极管的基极连接第二输入电压;a first triode and a second triode, wherein the base of the first triode is connected to the first input voltage, and the base of the second triode is connected to the second input voltage; 第三三极管和第四三极管,其中第三三极管的基极和集电极短接,第三三极管的发射极连接电源电压,第三三极管的集电极连接第一三极管的集电极,第四三极管的基极和第三三极管的基极相连,第四三极管的发射极连接电源电压,第四三极管的集电极和第二三极管的集电极相连且是四输入端比较器的输出;The third triode and the fourth triode, wherein the base and collector of the third triode are short-circuited, the emitter of the third triode is connected to the power supply voltage, and the collector of the third triode is connected to the first The collector of the triode, the base of the fourth triode are connected to the base of the third triode, the emitter of the fourth triode is connected to the power supply voltage, the collector of the fourth triode is connected to the second three The collector of the pole tube is connected and is the output of the four-input comparator; 第一三极管的发射极连有第一电阻,第二三极管的发射极连有第二电阻,第一电阻的另一端连接第三输入电压,第二电阻的另一端连接第四输入电压。The emitter of the first triode is connected to the first resistor, the emitter of the second triode is connected to the second resistor, the other end of the first resistor is connected to the third input voltage, and the other end of the second resistor is connected to the fourth input Voltage. 10.根据权利要求9所述的四输入端比较器,其特征在于,第一三极管和第二三极管的尺寸相同,第三三极管和第四三极管的尺寸相同。10. The four-input comparator according to claim 9, wherein the first triode and the second triode have the same size, and the third triode and the fourth triode have the same size. 11.根据权利要求9所述的四输入端比较器,其特征在于,该四输入端比较器还包括:11. The four-input comparator according to claim 9, wherein the four-input comparator further comprises: 第五三极管,其基极连接第四三极管的集电极,其发射极连接电源电压,其集电极连接一电流源且是四输入端比较器的输出,电流源的另一端接地。The base of the fifth transistor is connected to the collector of the fourth transistor, the emitter is connected to the power supply voltage, the collector is connected to a current source which is the output of the four-input comparator, and the other end of the current source is grounded. 12.一种四输入端比较器,包括:12. A four-input comparator comprising: 第一三极管和第二三极管,其中第一三极管的基极连接第一输入电压,第二三极管的基极连接第二输入电压;a first triode and a second triode, wherein the base of the first triode is connected to the first input voltage, and the base of the second triode is connected to the second input voltage; 第三三极管和第四三极管,其中第三三极管的集电极和基极短接,第三三极管的集电极连接第一三极管的集电极,第三三极管的发射极接地,第四三极管的基极和第三三极管的基极相连,第四三极管的发射极接地,第四三极管的集电极与第二三极管的集电极相连且是四输入端比较器的输出;The third triode and the fourth triode, wherein the collector and base of the third triode are short-circuited, the collector of the third triode is connected to the collector of the first triode, and the third triode The emitter of the fourth triode is grounded, the base of the fourth triode is connected to the base of the third triode, the emitter of the fourth triode is grounded, the collector of the fourth triode is connected to the collector of the second triode The electrodes are connected and are the output of a four-input comparator; 第一三极管的发射极连有第一电阻,第二三极管的发射极连有第二电阻,第一电阻的另一端连接第三输入电压,第二电阻的另一端连接第四输入电压。The emitter of the first triode is connected to the first resistor, the emitter of the second triode is connected to the second resistor, the other end of the first resistor is connected to the third input voltage, and the other end of the second resistor is connected to the fourth input Voltage. 13.根据权利要求12所述的四输入端比较器,其特征在于,第一三极管和第二三极管的尺寸相同,第三三极管和第四三极管的尺寸相同。13. The four-input comparator according to claim 12, wherein the first triode and the second triode have the same size, and the third triode and the fourth triode have the same size. 14.根据权利要求12所述的四输入端比较器,其特征在于,该四输入端比较器还包括:14. The four-input comparator according to claim 12, wherein the four-input comparator further comprises: 第五三极管,其基极连接第四三极管的集电极,其发射极接地,其集电极连接一电流源且是四输入端比较器的输出,电流源的另一端接电源电压。The base of the fifth transistor is connected to the collector of the fourth transistor, the emitter is grounded, the collector is connected to a current source and is the output of the four-input comparator, and the other end of the current source is connected to the power supply voltage.
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CN101557216A (en) * 2009-03-05 2009-10-14 深圳市民展科技开发有限公司 Comparator and D-class audio power amplifier comprising comparator
CN101847981A (en) * 2010-04-12 2010-09-29 无锡中星微电子有限公司 Multi-input comparator and power switching circuit

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CN1758540A (en) * 2005-02-23 2006-04-12 威盛电子股份有限公司 Comparator and MOS Logic Circuit with Output Offset Correction
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