CN101900825A - X-ray sensor, method for manufacturing the same, and method for driving the same - Google Patents
X-ray sensor, method for manufacturing the same, and method for driving the same Download PDFInfo
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Abstract
The present invention provides an X-ray sensor comprising: the pixel unit array comprises scanning lines and data lines which are arranged in a crossed manner, a pixel unit array which is separated by the scanning lines and the data lines, a data driving circuit which is connected with the data lines, and a scanning driving circuit which is connected with the scanning lines; in the pixel unit array, each row of pixel units is connected with at least two scanning lines, at least two columns of pixel units share one data line, and each pixel unit comprises a photoelectric sensing element and a switch element. Correspondingly, a driving method of the X-ray sensor and a manufacturing method of the X-ray sensor are also provided. The X-ray sensor and the manufacturing method thereof can reduce the production cost of the X-ray sensor, and are suitable for application occasions which do not have high requirements on data signal acquisition rate in the fields of metal flaw detection, goods inspection equipment, measurement and control and the like.
Description
Technical Field
The invention relates to the technical field of sensors, in particular to an X-ray sensor and a manufacturing method and a driving method thereof.
Background
With the social development and the continuous progress of scientific technology, the X-ray sensor plays an important role in the field of medical imaging and is widely applied to other fields such as metal flaw detection. In recent years, with the endless development of various new X-ray sensors, the manufacturing cost of the conventional digital X-ray sensor is receiving more and more attention, and how to reduce the production cost without affecting the use performance of the product becomes a popular topic in the industry.
The structure and driving method of the flat-panel type X-ray sensor are similar to those of the liquid crystal display, fig. 1 is a schematic structural diagram of a conventional X-ray sensor, and fig. 2 is a schematic operation diagram corresponding to fig. 1. The X-ray sensor includes a plurality of scan lines 1 and data lines 2 arranged to cross each other, and an array of pixel units partitioned by the scan lines 1 and the data lines 2, each pixel unit being composed of a photodiode 4 and a Field Effect Transistor (FET) 3, wherein each FET 3 is connected to an adjacent one of the scan lines 1, and each photodiode 4 is connected to an adjacent one of the data lines 2 through the FET 3.
In the working process of the X-ray sensor, the photodiode senses X-rays to generate photoelectric signals, and the scanning lines apply driving scanning signals to each pixel unit to control the on-off state of the field effect transistor, so that the function of indirectly controlling the data acquisition circuit to read the photoelectric signals generated by each photodiode is achieved. When the field effect transistor is turned on, the photocurrent signal generated by the corresponding photodiode can be collected by the data line connected to the output end of the photodiode, and the collection function of the photodiode photoelectric signal is completed by controlling the time sequence of the scanning line and the data line driving signal.
The traditional flat panel X-ray sensor adopts a line-by-line scanning driving mode, namely, one scanning line only drives the switching state of one line of field effect transistors connected with the scanning line, thereby controlling the reading state of photoelectric signals of a photodiode connected with the field effect transistors; when the field effect transistor is turned on, the photocurrent signal generated by the corresponding photodiode can be read out from the corresponding data line through the data acquisition circuit.
The flat-panel X-ray sensor with the structure has higher data signal acquisition rate and can meet the requirements of static digital image medical equipment. However, in some applications, such as metal inspection, goods inspection equipment, measurement and control fields, there is no high requirement for the data signal acquisition rate, and reducing the production cost of the X-ray sensor becomes the focus of most attention in the industry.
Disclosure of Invention
The invention aims to provide an X-ray sensor, a manufacturing method and a driving method thereof, which can reduce the production cost of the X-ray sensor and are suitable for application occasions which do not have high requirements on data signal acquisition rate in the fields of metal flaw detection, goods inspection equipment, measurement and control and the like.
To solve the above problems, the present invention provides an X-ray sensor comprising:
the scanning lines and the data lines are arranged in a crossed manner,
a pixel unit array separated by a scanning line and a data line,
a data driving circuit connected to the data lines,
a scan driving circuit connected to the scan lines; wherein,
in the pixel unit array, each row of pixel units is connected with at least two scanning lines, at least two columns of pixel units share one data line, and each pixel unit comprises a photoelectric sensing element and a switch element.
The at least two columns of pixel units are adjacent in sequence.
The input ends of the pixel units positioned at the odd columns in the pixel units in each row are connected with one scanning line, the input ends of the pixel units positioned at the even columns in the pixel units in each row are connected with the other scanning line, and the output ends of the pixel units in two adjacent columns are connected with the same data line.
And each row of pixel units is divided into three groups, the input ends of the first group of pixel units are connected with the first scanning line, the input ends of the second group of pixel units are connected with the second scanning line, the input ends of the third group of pixel units are connected with the third scanning line, and the output ends of the adjacent three rows of pixel units are connected with the same data line.
One end of the pixel unit is connected with the common electrode, and the other end of the pixel unit is connected to the data line through the switch element.
The photoelectric sensing element comprises a photodiode, and the output end of the photodiode is connected with the data line through the switch element.
The switching element comprises a field effect transistor, the source electrode of the field effect transistor is connected with the output end of the photoelectric sensing element, the drain electrode of the field effect transistor is connected with the data line, and the grid electrode of the field effect transistor is connected with the scanning line.
There is also provided a driving method of an X-ray sensor, including:
the scanning drive circuit respectively inputs scanning signals to at least two scanning lines connected with each row of pixel units in an interlaced scanning mode,
controlling the on-off state of the pixel unit according to the scanning signal,
and collecting photoelectric signals of the pixel units in the on state.
Accordingly, there is also provided a method of manufacturing an X-ray sensor having an array of a plurality of pixel units including a photo-sensitive element region and a switching element region, the method comprising the steps of:
forming a gate layer on a substrate, the gate layer comprising: the pixel unit comprises at least two scanning lines connected with each row of pixel units, and a grid electrode connected with the scanning lines and positioned in a switch element area;
covering a gate dielectric layer on the gate layer;
forming an active layer on the gate dielectric layer of the switching element region, wherein the position of the active layer corresponds to the gate electrode;
forming a source drain layer, wherein the source drain layer comprises: a source electrode and a drain electrode on the active layer, and a data line connected to the source electrode; forming a lower electrode conducting layer of the photoelectric sensing element on the gate dielectric layer of the photoelectric sensing element area;
forming a photoelectric conversion layer on the lower electrode conductive layer;
covering a passivation layer on the exposed surface of the whole substrate, and forming an opening in the passivation layer in the photoelectric sensing element region to expose the photoelectric conversion layer;
and forming an upper electrode conductive layer of the photoelectric sensing element on the photoelectric conversion layer.
The gate layer further comprises a pad layer, and the following steps are included after the gate dielectric layer is formed:
and forming a through hole in the gate dielectric layer on the welding pad layer to expose the welding pad layer.
The method further comprises the following steps after forming a photoelectric conversion layer on the lower electrode conducting layer:
a transparent masking layer is formed on the photoelectric conversion layer.
The material of the transparent masking layer is transparent conductive oxide.
The transparent conductive oxide is indium tin oxide or indium zinc oxide.
The method further comprises the following steps after covering the passivation layer on the exposed surface of the whole substrate: and forming a common electrode layer on the passivation layer.
The common electrode layer and the upper electrode conductive layer are formed in the same process and are made of the same material.
The common electrode layer is made of transparent conductive oxide.
The transparent conductive oxide is indium tin oxide or indium zinc oxide.
After forming the common electrode layer on the passivation layer, the method further comprises: a light blocking layer is formed on the common electrode layer located in the switching element region.
The material of the light blocking layer is metal Mo.
The method further comprises the following steps after an upper electrode conducting layer of the photoelectric sensing element is formed on the photoelectric conversion layer: a protective layer is formed over the exposed surface of the substrate.
The protective layer is silicon nitride.
The grid layer is one or a combination alloy of more of Mo, Al or Cr.
The gate layer is made of Mo and Al alloy.
The source drain layer is one or a combination alloy of more of Mo, Al and Nd.
The source drain layer is made of Mo and Al alloy.
The gate dielectric layer is silicon nitride.
The photoelectric conversion layer includes an amorphous silicon layer.
The amorphous silicon layer is a laminated structure of an n-type amorphous silicon layer, an intrinsic amorphous silicon layer and a p-type amorphous silicon layer.
The active layer includes an amorphous silicon layer.
The amorphous silicon layer is a laminated structure of an intrinsic amorphous silicon layer and an n-type amorphous silicon layer.
The passivation layer is p-type silicon nitride.
The source and drain layers and the lower electrode are formed in the same process and are made of the same material.
Compared with the prior art, the technical scheme has the following advantages:
the X-ray sensor and the manufacturing method thereof adopt the structure that at least two scanning lines drive one row of pixel units, the number of data lines is reduced by at least half compared to the conventional X-ray sensor structure, and the number of corresponding data driving IC modules is also reduced by at least half, since the cost of the data drive IC module is much higher than that of the scan drive IC module (about 800 RMB per block of the data drive IC module, about 2-3 RMB per block of the scan drive IC module), therefore, although the number of the scanning drive IC modules is doubled, the production cost is reduced greatly compared with the traditional structure X-ray sensor on the whole, the production cost can be reduced without increasing the complexity of a peripheral drive circuit, and the requirement of some application occasions with low data acquisition rate, such as metal detection, cargo inspection and the like, can be met. Moreover, the aperture ratio of the X-ray sensor is not reduced on the basis of reducing the production cost.
The driving method of the X-ray sensor adopts an interlaced scanning mode, and driving signals are sequentially input into every other scanning line, so that crosstalk between two adjacent scanning lines can be effectively prevented.
Drawings
The above and other objects, features and advantages of the present invention will become more apparent from the accompanying drawings. Like reference numerals refer to like parts throughout the drawings. The drawings are not necessarily to scale, emphasis instead being placed upon illustrating the principles of the invention.
FIG. 1 is a schematic structural diagram of a conventional X-ray sensor;
FIG. 2 is a schematic diagram of the operation corresponding to FIG. 1;
FIG. 3 is a schematic structural diagram of an X-ray sensor according to a first embodiment;
FIG. 4 is a schematic diagram of the operation corresponding to FIG. 3;
FIG. 5 is a schematic view of an X-ray sensor manufactured by the manufacturing method of the second embodiment;
FIG. 6 is a cross-sectional view taken along line A-A of FIG. 5;
fig. 7 to 14 are schematic views illustrating a manufacturing method of an X-ray sensor according to a second embodiment.
Detailed Description
In order to make the aforementioned objects, features and advantages of the present invention comprehensible, embodiments accompanied with figures are described in detail below.
In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present invention, but the present invention may be practiced in other ways than those specifically described herein, and thus the present invention is not limited to the specific embodiments disclosed below.
Next, the present invention will be described in detail with reference to the drawings, wherein the cross-sectional views illustrating the structure of the device are not enlarged partially in general scale for convenience of illustration, and the drawings are only exemplary and should not be construed as limiting the scope of the present invention. In addition, the three-dimensional dimensions of length, width and depth should be included in the actual fabrication.
The conventional X-ray sensor is mainly used in the medical field, but in the application fields of metal inspection, cargo inspection and the like, the requirement on the data acquisition rate of the X-ray sensor is not very high, and in this case, how to reduce the production cost becomes a primary factor considered by manufacturers. In view of the above problems, the inventors have studied and found that, as shown in fig. 2, the cost of a data drive (Source Driver) IC module is high in the production cost of the X-ray sensor, and therefore, the cost is a large part of the cost. If the number of data Driver (Gate Driver) IC modules can be reduced without affecting the performance of the product, the production cost of the X-ray sensor can be greatly reduced.
Based on the above, compared with the traditional structure X-ray sensor, the number of the scanning lines in the X-ray sensor is increased by multiple times, and the number of the corresponding data lines is reduced by multiple times, so that a plurality of scanning lines are required to drive each row of pixel units, and a plurality of rows of pixel units can share one data line.
The present invention provides an X-ray sensor comprising: the pixel unit array comprises scanning lines and data lines which are arranged in a crossed manner, a pixel unit array which is separated by the scanning lines and the data lines, a data driving IC which is connected with the data lines, and a scanning driving IC which is connected with the scanning lines; in the pixel unit array, each row of pixel units is connected with at least two scanning lines, and at least two columns of pixel units share one data line. In other words, each row of pixel units is divided into at least two groups, the input end of each group of pixel units is respectively connected with the corresponding scanning driving IC through different scanning lines, and the output end of the pixel units belonging to different groups is connected with the corresponding data driving IC through the same data line.
An embodiment of the X-ray sensor is described in detail below with reference to the accompanying drawings.
Example one
Fig. 3 is a schematic structural diagram of the X-ray sensor in the present embodiment, and fig. 4 is a schematic operation diagram corresponding to fig. 3. As shown in fig. 3, the X-ray sensor includes: a scanning line 11 and a data line 12 arranged crosswise, an array of pixel units 10 separated by the scanning line 11 and the data line 12, a data driving ic (source driver) connected with the data line 12, a scanning driving ic (gate driver) connected with the scanning line 11; in the pixel unit array, each row of pixel units 10 is connected to two scanning lines 11a, 11b, and two columns of pixel units 10a, 10b share one data line 12.
As shown in fig. 4, each row of pixel units 10 is divided into two groups, i.e., an odd group and an even group, according to the column, one end of each pixel unit 10a located in the odd column is connected to a scan line 11a, the input end of each pixel unit 10b located in the even column is connected to a scan line 11b, and the other ends of the adjacent two columns of pixel units 10a and 10b are connected to the same data line 12.
Each of the scan lines 11 is connected to one of the scan driver IC modules (not shown), and each of the data lines 12 is connected to one of the data driver IC modules.
The pixel unit 10 includes: the photoelectric sensing element and the switch element are connected with the photoelectric sensing element. In this embodiment, the switching element is, for example, a field effect transistor 13, and the photo-sensing element is, for example, a photodiode 14; wherein, the input end of the pixel unit 10 is the gate of the field effect transistor 13, and the output end of the pixel unit 10 is the drain of the field effect transistor 13. The output terminal of the photodiode 14 is connected to the data line 12 through the field effect transistor 13. The field effect transistor 13 has a source connected to the output terminal of the photodiode 14, a drain connected to the data line 12, and a gate connected to the scanning line 11.
As shown in fig. 3 and 4, the two rows of pixel units 10 of the X-ray sensor of this structure share one data line 12, i.e., the field effect transistors 13a in the odd columns of pixel units 10a and the field effect transistors 13b in the even columns of pixel units 10b of each row of pixel units are connected to two scan lines 11a and 11b, respectively. Therefore, the number of the scanning lines is doubled compared with that of the X-ray sensor with the traditional structure, and correspondingly, the number of the scanning drive IC modules is doubled; for the data line, two adjacent columns of pixel units 10a and 10b share one data line 12, and the control of the signal reading state of the odd column and the even column in the row of pixel units can be realized by the time sequence control of two scanning lines, so that compared with the X-ray sensor with the traditional structure, the number of the data lines is reduced by half on the whole, and correspondingly, the number of the data drive IC modules is also reduced by half correspondingly.
When the X-ray sensor works, the driving mode is also a single-row scanning mode, namely two scanning lines only drive one group of field effect transistors corresponding to the two scanning lines, light irradiates the photodiode 14, and the photodiode 14 generates electronic drift due to the irradiation of the light to form a photocurrent signal; when a driving voltage is applied to the scanning line 11a (connected to the gate of the field effect transistor 13 a), the field effect transistor 13a of the pixel unit 10a in the odd column in the row is turned on, and the photocurrent signal of the corresponding photodiode 14a can be read out from the corresponding data line 12a through a data acquisition circuit (not shown in the figure); in the same manner, when a driving voltage is applied to the scanning line 11b (connected to the gate of the field effect transistor 13 b), the field effect transistor 13b of the pixel unit 10b in the even column is turned on, and the photo current signal of the corresponding photodiode 14b can be read out from the corresponding data line 12b through a data acquisition circuit (not shown). The photoelectric signals of the whole pixel unit array can be read by sequentially scanning the two scanning lines 11a and 11b in a progressive or interlaced manner.
The X-ray sensor of the embodiment adopts a structure that two scanning lines drive one row of pixel units, so that the number of data lines is reduced by half compared with the traditional structure, the number of corresponding data drive IC modules is also reduced by half, and the cost of the data drive IC modules is higher than that of the scanning drive IC modules, so that although the number of the scanning drive IC modules is doubled, the production cost is reduced greatly compared with the traditional structure X-ray sensor on the whole, the production cost can be reduced without increasing the complexity of a peripheral drive circuit, and the X-ray sensor can sufficiently meet the application occasions with low data acquisition rate, such as metal detection, cargo inspection and the like. Moreover, the aperture ratio of the X-ray sensor is not reduced on the basis of reducing the production cost.
In this embodiment, the pixel units of the odd and even columns adjacent to each other share one data line, and besides, the pixel units of the odd and even columns at different positions may share one data line, and the pixel units of each row are still divided into two groups, namely an odd group and an even group, according to the column where the pixel units are located, and are respectively connected to two different scanning lines.
In addition, the driving method of the X-ray sensor in this embodiment includes the following steps:
step S1: scanning signals are respectively input to two scanning lines connected with each row of pixel units in an interlaced scanning mode, wherein the input ends of the pixel units positioned at odd columns in each row of pixel units are connected with one scanning line, the input ends of the pixel units positioned at even columns in each row of pixel units are connected with the other scanning line, and the output ends of the pixel units at two adjacent columns are connected with the same data line. For example, the pixel units of the odd columns input a first scanning signal, and the pixel units of the even columns input a second scanning signal;
step S2: controlling the on-off state of the pixel unit according to the scanning signals (the first scanning signal and the second scanning signal), for example, when a high level is input to the field effect transistor, the pixel unit is turned on, and when a low level is input to the field effect transistor, the pixel unit is turned off;
step S3: and collecting photoelectric signals of the pixel units in the on state.
The interlaced scanning method is, for example, the following driving sequence:
gate1-->gate3-->gate2-->gate4-->gate5-->gate7-->gate6-->gate8;
the following steps can be also included: gate1- - > gate3- - > gate5- - > gate2- - > gate4- - > gate6- - > gate7- - -gate 9.
Wherein, the gates 1 ~ 9 represent the scanning lines.
In other embodiments of the present invention, more than two scan lines drive the pixel units in the same row, and the driving method also adopts an interlaced scanning manner, and the driving signal is input to every other scan line. The invention can effectively prevent the crosstalk between two adjacent scanning lines by adopting an interlaced scanning mode.
An embodiment of the method for manufacturing an X-ray sensor is described in detail below with reference to the accompanying drawings.
Example two
Fig. 5 is a schematic view of an X-ray sensor manufactured by the manufacturing method in the present embodiment, fig. 6 is a cross-sectional view in the a-a direction in fig. 5, and fig. 7 to 14 are schematic views of the manufacturing method.
The X-ray sensor has an array composed of a plurality of pixel units, the pixel units include a photoelectric sensing element region F and a switching element region E, and the following describes a specific process implementation:
step A1: as shown in fig. 7, a Gate layer (Gate layer) is formed on a substrate 100, the Gate layer including: at least two scanning lines connected with each row of pixel units, and a grid electrode 102 connected with the scanning lines and positioned in the switching element area; i.e., the first scan line 101 and the second scan line (not shown), and a pad layer (not shown). For example, a first metal layer (not shown) is deposited, a photoresist layer (not shown) is patterned to cover the first metal layer by using the mask B1, and the first metal layer is etched by using the photoresist layer as a mask to form the first scan line 101, the second scan line and the gate 102 of the switching element. The first metal layer is one or more of Mo, Al and Cr, preferably an alloy of Mo and Al.
Step A2: as shown in fig. 8, a gate dielectric layer 103 is covered on the gate layer, and then an Active layer (Active layer)104 is formed on the gate dielectric layer 103 of the switching element region E, where the position of the Active layer 104 corresponds to the gate electrode 102 of the switching element; the active layer 104 includes an amorphous silicon layer, and preferably, the amorphous silicon layer is a semiconductor island 104 having a stacked structure of an intrinsic amorphous silicon layer and an n-type amorphous silicon layer. Specifically, a gate dielectric layer 103 covering the gate layer is deposited, then an amorphous silicon film and an n-type amorphous silicon film are deposited in sequence on the gate dielectric layer 103, exposure and etching are performed by using a photomask B2, a part of the amorphous silicon film and the n-type amorphous silicon film are removed to form a semiconductor island 104 corresponding to the gate 102, and a conductive channel (not shown in the figure) is formed in the active layer, wherein the gate dielectric layer also serves as an insulating layer between the gate and the source/drain.
Step A3: the gate layer further comprises a pad layer, a via hole (not shown in the figure) is formed in the gate dielectric layer on the pad layer to expose the pad layer, specifically, the exposure and etching are carried out through a photomask B3, and the via hole is formed on the pad layer, so that the source/drain layer and the gate layer can be conducted at the pad layer.
Step A4: forming a source drain layer, wherein the source drain layer comprises: a source electrode and a drain electrode on the active layer, and a data line connected to the source electrode; as shown in fig. 9, a lower electrode conductive layer 105 of the photo-electric sensing element is formed on the gate dielectric layer 103 of the photo-electric sensing element region F. Specifically, a second metal layer is deposited, and then exposed and etched using the mask B4, and a portion of the second metal layer is removed to form the data line and the source/drain. The second metal layer is one or more of Mo, Al and Nd, preferably Mo and Al alloy.
Step A5: as shown in fig. 10, a photoelectric conversion layer (Diodelayer)106 is formed on the lower electrode conductive layer 105. Specifically, an amorphous silicon layer (not shown) is deposited, exposed and etched by using the mask B5, and a portion of the amorphous silicon layer is removed to form the photoelectric conversion layer 106, thereby implementing the photoelectric signal conversion function. The amorphous silicon layer is, for example, a stacked structure of an n-type amorphous silicon layer, an intrinsic amorphous silicon layer, and a p-type amorphous silicon layer.
Step A6: as shown in fig. 11, a transparent masking layer (Caplayer)107 is formed on the photoelectric conversion layer 106, and a material of the transparent masking layer 107 includes a transparent conductive oxide, such as Indium Tin Oxide (ITO) or Indium Zinc Oxide (IZO). Specifically, an ITO film is deposited, exposed and etched using a mask B6, and a portion of the ITO film is removed to form the transparent masking layer 107, thereby serving as an etching protection layer when a photodiode passivation layer is subsequently etched, and avoiding damage to the photoelectric conversion layer 106 due to over-etching.
Step A7: as shown in fig. 12, a passivation layer 108 (passivation layer) is formed on the entire exposed surface of the substrate, and an opening C is formed in the passivation layer 108 at the photo sensor region F to expose the photoelectric conversion layer. The passivation layer is p-type silicon nitride. Specifically, a second dielectric layer (not shown) is deposited, exposed and etched by using the mask B7, a portion of the second dielectric layer is removed to form a passivation layer 108, an opening C is formed in the passivation layer 108 to expose a photosensitive area of the photodiode, and the passivation layer 108 serves as an etching protection layer of the photodiode and also serves as an insulating layer to prevent an excessive leakage current of the photodiode. The passivation layer is, for example, silicon nitride.
Step A8: as shown in fig. 13, a Common electrode layer (Common layer)109 is formed, and an upper electrode conductive layer 109a of the photoelectric sensor element is formed on the photoelectric conversion layer 106. The common electrode layer is made of, for example, Indium Tin Oxide (ITO) or Indium Zinc Oxide (IZO). Preferably, the common electrode layer 109 and the upper electrode conductive layer 109a are formed in the same process and are made of the same material. Specifically, exposure and etching are performed using the mask B8, and the common electrode line is formed.
Step A9: as shown in fig. 14, a Light block layer (Light block layer)110 is formed on the common electrode layer 109 located in the switching element region, the Light block layer corresponding to the position of the semiconductor island 104. The material of the light blocking layer is metal Mo. Specifically, the exposure and etching are performed by using a photomask B9, the light blocking layer is connected with the common electrodes of two adjacent rows of pixel units and is used for preventing the disconnection defect of the common electrodes, and the main function of the light blocking layer above the field effect transistor is to prevent the light from irradiating the field effect transistor to cause electronic drift, so that the influence on the output result is reduced.
Step A10: as shown in fig. 6, a protective layer 111 is formed on the entire exposed surface of the substrate. The protective layer is, for example, silicon nitride. Specifically, the protective layer 111 mainly functions to protect components on the substrate by exposure and etching using the mask B10.
The X-ray sensor and the manufacturing method thereof described above adopt a dual-scan line (dual gate) structure in which two scan lines drive a row of pixel units, and the switching states of the field effect transistors in the odd columns and the even columns of the row are respectively controlled by the two scan lines, so as to achieve the purpose of controlling the reading state of the photoelectric signal of each photodiode.
In addition, based on the same principle, the X-ray sensor according to another embodiment of the invention may also adopt a three-scan-line (triple gate) structure in which three scan lines drive one row of pixel units, for example, each row of pixel units is divided into three groups, the input ends of the first group of pixel units are all connected to the first scan line, the input ends of the second group of pixel units are all connected to the second scan line, the input ends of the third group of pixel units are all connected to the third scan line, and the output ends of the adjacent three rows of pixel units are connected to the same data line.
Or a structure with more scanning lines is adopted, namely n scanning lines drive one row of pixel units (n is a natural number which is more than or equal to 2), the composition and the connection mode are similar to the embodiment, at this time, the number of the scanning lines is increased to be n times of the traditional structure, the number of the data lines is also reduced to be 1/n of the traditional structure, therefore, the number of the data drive IC modules is also reduced to be 1/n of the traditional structure, and because the cost of the data drive IC modules is higher compared with that of the scanning drive IC modules, although the number of the data drive IC modules is increased by n times, the production cost is greatly reduced compared with that of the traditional structure X-ray sensor in whole. Therefore, the technical scheme provided by the invention has stronger expansibility, and can realize lower production cost by combining the data lines and increasing the number of the scanning lines.
The foregoing is merely a preferred embodiment of the invention and is not intended to limit the invention in any manner. Although the present invention has been described with reference to the preferred embodiments, it is not intended to be limited thereto. Those skilled in the art can make numerous possible variations and modifications to the present invention, or modify equivalent embodiments, using the methods and techniques disclosed above, without departing from the scope of the present invention. Therefore, any simple modification, equivalent change and modification made to the above embodiments according to the technical essence of the present invention are still within the scope of the protection of the technical solution of the present invention, unless the contents of the technical solution of the present invention are departed.
Claims (32)
1. An X-ray sensor, comprising:
the scanning lines and the data lines are arranged in a crossed manner,
a pixel unit array separated by a scanning line and a data line,
a data driving circuit connected to the data lines,
a scan driving circuit connected to the scan lines; wherein,
in the pixel unit array, each row of pixel units is connected with at least two scanning lines, at least two columns of pixel units share one data line, and each pixel unit comprises a photoelectric sensing element and a switch element.
2. The X-ray sensor of claim 1, wherein the at least two columns of pixel cells are sequentially adjacent.
3. The X-ray sensor according to claim 2, wherein the input ends of the pixel units in odd columns in each row of pixel units are connected with one scan line, the input ends of the pixel units in even columns in each row of pixel units are connected with another scan line, and the output ends of the pixel units in two adjacent columns are connected with the same data line.
4. The X-ray sensor of claim 2, wherein each row of pixel units is divided into three groups, and then the input terminals of the first group of pixel units are all connected to the first scan line, the input terminals of the second group of pixel units are all connected to the second scan line, the input terminals of the third group of pixel units are all connected to the third scan line, and the output terminals of three adjacent rows of pixel units are connected to the same data line.
5. The X-ray sensor according to any one of claims 1 to 4, wherein one end of the pixel unit is connected to a common electrode, and the other end is connected to the data line via the switching element.
6. The X-ray sensor according to any one of claims 1 to 4, wherein the photo-sensing element comprises a photodiode, an output terminal of which is connected to the data line via the switching element.
7. The X-ray sensor according to claim 5, wherein the switching element comprises a field effect transistor, a source of the field effect transistor is connected to the output terminal of the photo-sensing element, a drain of the field effect transistor is connected to the data line, and a gate of the field effect transistor is connected to the scan line.
8. A driving method of an X-ray sensor according to claim 1, comprising:
the scanning drive circuit respectively inputs scanning signals to at least two scanning lines connected with each row of pixel units in an interlaced scanning mode,
controlling the on-off state of the pixel unit according to the scanning signal,
and collecting photoelectric signals of the pixel units in the on state.
9. A manufacturing method of an X-ray sensor having an array of a plurality of pixel units including a photo-sensitive element region and a switching element region, comprising the steps of:
forming a gate layer on a substrate, the gate layer comprising: the pixel unit comprises at least two scanning lines connected with each row of pixel units, and a grid electrode connected with the scanning lines and positioned in a switch element area;
covering a gate dielectric layer on the gate layer;
forming an active layer on the gate dielectric layer of the switching element region, wherein the position of the active layer corresponds to the gate electrode;
forming a source drain layer, wherein the source drain layer comprises: a source electrode and a drain electrode on the active layer, and a data line connected to the source electrode; forming a lower electrode conducting layer of the photoelectric sensing element on the gate dielectric layer of the photoelectric sensing element area;
forming a photoelectric conversion layer on the lower electrode conductive layer;
covering a passivation layer on the exposed surface of the whole substrate, and forming an opening in the passivation layer in the photoelectric sensing element region to expose the photoelectric conversion layer;
and forming an upper electrode conductive layer of the photoelectric sensing element on the photoelectric conversion layer.
10. The method of claim 9, wherein the gate layer further comprises a pad layer, and the method further comprises the following steps after the gate dielectric layer is formed:
and forming a through hole in the gate dielectric layer on the welding pad layer to expose the welding pad layer.
11. The method of manufacturing an X-ray sensor according to claim 9, further comprising, after forming a photoelectric conversion layer on the lower electrode conductive layer, the steps of:
a transparent masking layer is formed on the photoelectric conversion layer.
12. The method of claim 11, wherein the material of the transparent masking layer is a transparent conductive oxide.
13. The method of manufacturing an X-ray sensor according to claim 12, wherein the transparent conductive oxide is indium tin oxide or indium zinc oxide.
14. The method of manufacturing an X-ray sensor according to claim 9, further comprising the following steps after covering the passivation layer on the entire exposed surface of the substrate: and forming a common electrode layer on the passivation layer.
15. The method of claim 14, wherein the common electrode layer and the upper electrode conductive layer are formed in the same process and are made of the same material.
16. The method according to claim 14, wherein a material of the common electrode layer is a transparent conductive oxide.
17. The method of manufacturing an X-ray sensor according to claim 16, wherein the transparent conductive oxide is indium tin oxide or indium zinc oxide.
18. The method of manufacturing an X-ray sensor according to claim 14, further comprising, after forming a common electrode layer on the passivation layer: a light blocking layer is formed on the common electrode layer located in the switching element region.
19. The method of manufacturing an X-ray sensor according to claim 18, wherein the material of the light blocking layer is metallic Mo.
20. The method of manufacturing an X-ray sensor according to claim 9, further comprising the following steps after forming an upper electrode conductive layer of the photoelectric sensing element on the photoelectric conversion layer: a protective layer is formed over the exposed surface of the substrate.
21. The method of claim 20, wherein the protective layer is silicon nitride.
22. The method of claim 9, wherein the gate layer is a composite alloy of one or more of Mo, Al, or Cr.
23. The method of claim 22, wherein the gate layer is an alloy of Mo and Al.
24. The method of claim 9, wherein the source drain layer is a combined alloy of one or more of Mo, Al, or Nd.
25. The method of claim 24, wherein the source-drain layers are an alloy of Mo and Al.
26. The method of claim 9, wherein the gate dielectric layer is silicon nitride.
27. The method of manufacturing an X-ray sensor according to claim 9, wherein the photoelectric conversion layer includes an amorphous silicon layer.
28. The method of manufacturing an X-ray sensor according to claim 27, wherein the amorphous silicon layer is a laminated structure of an n-type amorphous silicon layer, an intrinsic amorphous silicon layer, and a p-type amorphous silicon layer.
29. The method of manufacturing an X-ray sensor according to claim 9, wherein the active layer comprises an amorphous silicon layer.
30. The method of manufacturing an X-ray sensor according to claim 29, wherein the amorphous silicon layer is a stacked-layer structure of an intrinsic amorphous silicon layer and an n-type amorphous silicon layer.
31. The method of claim 9, wherein the passivation layer is p-type silicon nitride.
32. The method of claim 9, wherein the source/drain layer and the lower electrode are formed in the same process and are made of the same material.
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