CN101899265B - Chemical mechanical polishing composition for removing saw cut - Google Patents
Chemical mechanical polishing composition for removing saw cut Download PDFInfo
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- CN101899265B CN101899265B CN2009101430519A CN200910143051A CN101899265B CN 101899265 B CN101899265 B CN 101899265B CN 2009101430519 A CN2009101430519 A CN 2009101430519A CN 200910143051 A CN200910143051 A CN 200910143051A CN 101899265 B CN101899265 B CN 101899265B
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- 239000000203 mixture Substances 0.000 title claims description 58
- 238000005498 polishing Methods 0.000 title abstract description 12
- 239000000126 substance Substances 0.000 title abstract description 6
- 238000000034 method Methods 0.000 claims abstract description 36
- 239000004065 semiconductor Substances 0.000 claims abstract description 24
- 239000002904 solvent Substances 0.000 claims abstract description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 20
- 239000003082 abrasive agent Substances 0.000 claims description 11
- ROSDSFDQCJNGOL-UHFFFAOYSA-N Dimethylamine Chemical compound CNC ROSDSFDQCJNGOL-UHFFFAOYSA-N 0.000 claims description 10
- BDAGIHXWWSANSR-UHFFFAOYSA-N Formic acid Chemical compound OC=O BDAGIHXWWSANSR-UHFFFAOYSA-N 0.000 claims description 9
- GLUUGHFHXGJENI-UHFFFAOYSA-N Piperazine Chemical compound C1CNCCN1 GLUUGHFHXGJENI-UHFFFAOYSA-N 0.000 claims description 9
- 239000000377 silicon dioxide Substances 0.000 claims description 8
- LVTYICIALWPMFW-UHFFFAOYSA-N diisopropanolamine Chemical compound CC(O)CNCC(C)O LVTYICIALWPMFW-UHFFFAOYSA-N 0.000 claims description 7
- 229940043276 diisopropanolamine Drugs 0.000 claims description 7
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 6
- -1 1-amino-2-propyl Chemical group 0.000 claims description 5
- PIICEJLVQHRZGT-UHFFFAOYSA-N Ethylenediamine Chemical compound NCCN PIICEJLVQHRZGT-UHFFFAOYSA-N 0.000 claims description 4
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 claims description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 4
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 3
- 229910000420 cerium oxide Inorganic materials 0.000 claims description 3
- ZBCBWPMODOFKDW-UHFFFAOYSA-N diethanolamine Chemical compound OCCNCCO ZBCBWPMODOFKDW-UHFFFAOYSA-N 0.000 claims description 3
- 229940043237 diethanolamine Drugs 0.000 claims description 3
- 229910000480 nickel oxide Inorganic materials 0.000 claims description 3
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 claims description 3
- GNRSAWUEBMWBQH-UHFFFAOYSA-N oxonickel Chemical compound [Ni]=O GNRSAWUEBMWBQH-UHFFFAOYSA-N 0.000 claims description 3
- 235000012239 silicon dioxide Nutrition 0.000 claims description 3
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims description 3
- GEYOCULIXLDCMW-UHFFFAOYSA-N 1,2-phenylenediamine Chemical compound NC1=CC=CC=C1N GEYOCULIXLDCMW-UHFFFAOYSA-N 0.000 claims description 2
- IMUDHTPIFIBORV-UHFFFAOYSA-N aminoethylpiperazine Chemical compound NCCN1CCNCC1 IMUDHTPIFIBORV-UHFFFAOYSA-N 0.000 claims description 2
- 239000000463 material Substances 0.000 abstract description 4
- 239000002002 slurry Substances 0.000 abstract 2
- 150000001408 amides Chemical class 0.000 abstract 1
- 235000012431 wafers Nutrition 0.000 description 40
- 229910052710 silicon Inorganic materials 0.000 description 12
- 239000010703 silicon Substances 0.000 description 12
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 11
- 238000005538 encapsulation Methods 0.000 description 5
- 239000007788 liquid Substances 0.000 description 5
- KDSNLYIMUZNERS-UHFFFAOYSA-N 2-methylpropanamine Chemical compound CC(C)CN KDSNLYIMUZNERS-UHFFFAOYSA-N 0.000 description 4
- VVJKKWFAADXIJK-UHFFFAOYSA-N Allylamine Chemical compound NCC=C VVJKKWFAADXIJK-UHFFFAOYSA-N 0.000 description 4
- BAVYZALUXZFZLV-UHFFFAOYSA-N Methylamine Chemical compound NC BAVYZALUXZFZLV-UHFFFAOYSA-N 0.000 description 4
- WGQKYBSKWIADBV-UHFFFAOYSA-N benzylamine Chemical compound NCC1=CC=CC=C1 WGQKYBSKWIADBV-UHFFFAOYSA-N 0.000 description 4
- HQABUPZFAYXKJW-UHFFFAOYSA-N butan-1-amine Chemical compound CCCCN HQABUPZFAYXKJW-UHFFFAOYSA-N 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 4
- PAFZNILMFXTMIY-UHFFFAOYSA-N cyclohexylamine Chemical compound NC1CCCCC1 PAFZNILMFXTMIY-UHFFFAOYSA-N 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- NAQMVNRVTILPCV-UHFFFAOYSA-N hexane-1,6-diamine Chemical compound NCCCCCCN NAQMVNRVTILPCV-UHFFFAOYSA-N 0.000 description 4
- 229960005141 piperazine Drugs 0.000 description 4
- WGYKZJWCGVVSQN-UHFFFAOYSA-N propylamine Chemical compound CCCN WGYKZJWCGVVSQN-UHFFFAOYSA-N 0.000 description 4
- HXKKHQJGJAFBHI-UHFFFAOYSA-N 1-aminopropan-2-ol Chemical compound CC(O)CN HXKKHQJGJAFBHI-UHFFFAOYSA-N 0.000 description 3
- HZAXFHJVJLSVMW-UHFFFAOYSA-N 2-Aminoethan-1-ol Chemical compound NCCO HZAXFHJVJLSVMW-UHFFFAOYSA-N 0.000 description 3
- QUSNBJAOOMFDIB-UHFFFAOYSA-N Ethylamine Chemical compound CCN QUSNBJAOOMFDIB-UHFFFAOYSA-N 0.000 description 3
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 3
- 230000003746 surface roughness Effects 0.000 description 3
- UYBWIEGTWASWSR-UHFFFAOYSA-N 1,3-diaminopropan-2-ol Chemical compound NCC(O)CN UYBWIEGTWASWSR-UHFFFAOYSA-N 0.000 description 2
- VNRLFQGYFLCRMU-UHFFFAOYSA-N 2-piperazin-1-ylethanamine Chemical compound NCCN1CCNCC1.NCCN1CCNCC1 VNRLFQGYFLCRMU-UHFFFAOYSA-N 0.000 description 2
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 2
- GSEJCLTVZPLZKY-UHFFFAOYSA-N Triethanolamine Chemical compound OCCN(CCO)CCO GSEJCLTVZPLZKY-UHFFFAOYSA-N 0.000 description 2
- XSQUKJJJFZCRTK-UHFFFAOYSA-N Urea Chemical compound NC(N)=O XSQUKJJJFZCRTK-UHFFFAOYSA-N 0.000 description 2
- 238000005299 abrasion Methods 0.000 description 2
- 239000004202 carbamide Substances 0.000 description 2
- 239000008119 colloidal silica Substances 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 229940102253 isopropanolamine Drugs 0.000 description 2
- JJWLVOIRVHMVIS-UHFFFAOYSA-N isopropylamine Chemical compound CC(C)N JJWLVOIRVHMVIS-UHFFFAOYSA-N 0.000 description 2
- CRVGTESFCCXCTH-UHFFFAOYSA-N methyl diethanolamine Chemical compound OCCN(C)CCO CRVGTESFCCXCTH-UHFFFAOYSA-N 0.000 description 2
- 239000008267 milk Substances 0.000 description 2
- 210000004080 milk Anatomy 0.000 description 2
- 235000013336 milk Nutrition 0.000 description 2
- 238000004806 packaging method and process Methods 0.000 description 2
- IWZKICVEHNUQTL-UHFFFAOYSA-M potassium hydrogen phthalate Chemical compound [K+].OC(=O)C1=CC=CC=C1C([O-])=O IWZKICVEHNUQTL-UHFFFAOYSA-M 0.000 description 2
- 239000000741 silica gel Substances 0.000 description 2
- 229910002027 silica gel Inorganic materials 0.000 description 2
- 239000002210 silicon-based material Substances 0.000 description 2
- 229960005196 titanium dioxide Drugs 0.000 description 2
- XFNJVJPLKCPIBV-UHFFFAOYSA-N trimethylenediamine Chemical compound NCCCN XFNJVJPLKCPIBV-UHFFFAOYSA-N 0.000 description 2
- 230000000007 visual effect Effects 0.000 description 2
- 238000012800 visualization Methods 0.000 description 2
- PVOAHINGSUIXLS-UHFFFAOYSA-N 1-Methylpiperazine Chemical compound CN1CCNCC1 PVOAHINGSUIXLS-UHFFFAOYSA-N 0.000 description 1
- VILCJCGEZXAXTO-UHFFFAOYSA-N 2,2,2-tetramine Chemical compound NCCNCCNCCN VILCJCGEZXAXTO-UHFFFAOYSA-N 0.000 description 1
- RVSIYTLODOLVKA-UHFFFAOYSA-N 2-(2-aminoethoxy)ethanol Chemical compound NCCOCCO.NCCOCCO RVSIYTLODOLVKA-UHFFFAOYSA-N 0.000 description 1
- DYSYTOUAGABXJV-UHFFFAOYSA-N 2-(methylamino)ethanol Chemical compound CNCCO.CNCCO DYSYTOUAGABXJV-UHFFFAOYSA-N 0.000 description 1
- CANUCRUMAYEUDP-UHFFFAOYSA-N 2-[2-(dimethylamino)ethoxy]ethanol ethanol Chemical compound CCO.CN(C)CCOCCO CANUCRUMAYEUDP-UHFFFAOYSA-N 0.000 description 1
- BKMMTJMQCTUHRP-UHFFFAOYSA-N 2-aminopropan-1-ol Chemical compound CC(N)CO BKMMTJMQCTUHRP-UHFFFAOYSA-N 0.000 description 1
- DCPSTLZVUJTDTC-UHFFFAOYSA-N 3-Hydroxycadaverine Chemical compound NCCC(O)CCN DCPSTLZVUJTDTC-UHFFFAOYSA-N 0.000 description 1
- JQRGJKGJUJLSDS-UHFFFAOYSA-N CN(C)CCO.CN(C)CCO Chemical compound CN(C)CCO.CN(C)CCO JQRGJKGJUJLSDS-UHFFFAOYSA-N 0.000 description 1
- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- RPNUMPOLZDHAAY-UHFFFAOYSA-N Diethylenetriamine Chemical compound NCCNCCN RPNUMPOLZDHAAY-UHFFFAOYSA-N 0.000 description 1
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 1
- 229920002873 Polyethylenimine Polymers 0.000 description 1
- WUGQZFFCHPXWKQ-UHFFFAOYSA-N Propanolamine Chemical compound NCCCO WUGQZFFCHPXWKQ-UHFFFAOYSA-N 0.000 description 1
- 239000006061 abrasive grain Substances 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 125000000217 alkyl group Chemical group 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- 230000000844 anti-bacterial effect Effects 0.000 description 1
- 239000003899 bactericide agent Substances 0.000 description 1
- XAHAOEIIQYSRHJ-UHFFFAOYSA-N benzene-1,2-diamine Chemical compound NC1=CC=CC=C1N.NC1=CC=CC=C1N XAHAOEIIQYSRHJ-UHFFFAOYSA-N 0.000 description 1
- 230000003139 buffering effect Effects 0.000 description 1
- PBAYDYUZOSNJGU-UHFFFAOYSA-N chelidonic acid Natural products OC(=O)C1=CC(=O)C=C(C(O)=O)O1 PBAYDYUZOSNJGU-UHFFFAOYSA-N 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 239000003814 drug Substances 0.000 description 1
- 230000008030 elimination Effects 0.000 description 1
- 238000003379 elimination reaction Methods 0.000 description 1
- 229910001651 emery Inorganic materials 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000009472 formulation Methods 0.000 description 1
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- QATBRNFTOCXULG-UHFFFAOYSA-N n'-[2-(methylamino)ethyl]ethane-1,2-diamine Chemical compound CNCCNCCN QATBRNFTOCXULG-UHFFFAOYSA-N 0.000 description 1
- DAZXVJBJRMWXJP-UHFFFAOYSA-N n,n-dimethylethylamine Chemical compound CCN(C)C DAZXVJBJRMWXJP-UHFFFAOYSA-N 0.000 description 1
- 150000007530 organic bases Chemical class 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- UKODFQOELJFMII-UHFFFAOYSA-N pentamethyldiethylenetriamine Chemical compound CN(C)CCN(C)CCN(C)C UKODFQOELJFMII-UHFFFAOYSA-N 0.000 description 1
- 229960003506 piperazine hexahydrate Drugs 0.000 description 1
- AVRVZRUEXIEGMP-UHFFFAOYSA-N piperazine;hexahydrate Chemical compound O.O.O.O.O.O.C1CNCCN1 AVRVZRUEXIEGMP-UHFFFAOYSA-N 0.000 description 1
- 150000004885 piperazines Chemical class 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- AOHJOMMDDJHIJH-UHFFFAOYSA-N propylenediamine Chemical compound CC(N)CN AOHJOMMDDJHIJH-UHFFFAOYSA-N 0.000 description 1
- 230000008054 signal transmission Effects 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- AGGKEGLBGGJEBZ-UHFFFAOYSA-N tetramethylenedisulfotetramine Chemical compound C1N(S2(=O)=O)CN3S(=O)(=O)N1CN2C3 AGGKEGLBGGJEBZ-UHFFFAOYSA-N 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 229910001928 zirconium oxide Inorganic materials 0.000 description 1
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- Mechanical Treatment Of Semiconductor (AREA)
Abstract
The invention relates to chemical mechanical lapping slurry for removing saw cut, which comprises a polishing material, an amide, a polishing accelerator and a solvent. The invention also relates to a method for removing the saw cut from the surface of a semiconductor chip by using the chemical mechanical polishing slurry.
Description
Technical field
The present invention relates to a kind of Chemicomechanically grinding composition of using for the semiconductor wafer thinning.
Background technology
Along with small-sized, the slimming trend of various electronic equipments in recent years, the slimming demand of semiconductor chip also increases day by day.Except the chip micro development of semiconductor FEOL towards 45,32 nanometers, the back segment encapsulation procedure is also developed toward the field of 3D encapsulation quite actively.In the 3D encapsulation procedure, the wafer thinning can say the step of most critical, because it is determining wafer-class encapsulation (Chip Scale Packaging, CSP) and system in package (System-in-packaging, SiP) the minimum package dimension in, and less package dimension just can allow the chip of more difference in functionalitys be incorporated in same encapsulation, so can by means of gentlier, less package dimension, reach and reduce power consumption, raising signal transmission speed, and more chip functions is provided.
Wafer thinning processing procedure comprises and is applied in semiconductor wafers thinning and silicon through hole (Through Silicon Via, TSV) wafer thinning.The silicon wafer thinning is ground thinning to the silicon material of semiconductor wafer.The thinning of silicon through hole wafer is through etching or laser mode, to form through hole (via), and, by electric conducting material, inserts as copper, aluminium, tungsten, polysilicon etc. the silicon through hole wafer that forms conducting wire and carry out thinning.At present the common processing procedure of industry be with mechanical type abrasion wheel grinding (grinding) processing procedure first by after the quick thinning of wafer, then carry out the surfacing polishing with cmp (chemical mechanical polishing, CMP) processing procedure.Need eliminate residual defects layer and kerf (saw mark) that mechanical polishing causes in the wafer surface of thinning when carrying out the CMP processing procedure.
United States Patent (USP) the 4th, disclose to be used the admixture of colloidal silica or silica gel (silica gel) and water-soluble amine for 169, No. 337, the abrasive composition of usining as grinding semiconductor surface use.
United States Patent (USP) the 5th is for 230, No. 833 to disclose the abrasive composition that comprises colloidal silica, organic base and bactericide.
United States Patent (USP) the 5th, 391, disclose the abrasive composition of the compound of a kind of, silica siliceous for polishing or silicate for No. 258, it still comprises hydrogen peroxide and Potassium Hydrogen Phthalate (potassium hydrogenphthalate) except comprising abrasive grains.
TaiWan, China patent the 338th, disclose a kind of Ginding process of truncated portion of semiconductor silicon substrate No. 836, and the lapping liquid of its use consists of cabosil, and its average grain diameter is 50-150nm, and the pH value is 10-11, and concentration is 30-50wt%.
TaiWan, China patent the 500th, disclose a kind of cmp processing procedure of silicon materials for No. 789, is to use the monoxide grinding milk, and it comprises deionized water, forges the polishing particles of silica processed, reaches chemical reactor, as potassium hydroxide.
Although using extra cmp (CMP) processing procedure of collocation after above-mentioned mechanical polishing is the wafer thinning processing procedure comparatively be applicable to, the cmp processing procedure still has technical problem to wait to overcome in collocation.Usually carry out polishing of semiconductor wafers with the alkaline oxygenated silicon CMP grinding milk containing the pH buffering traditionally, but the kerf phenomenon efficiency caused at elimination mechanical lapping processing procedure is not good, therefore industrial circle is needed a kind of chemical-mechanical grinding liquid of novelty badly to address the above problem.
Summary of the invention
This case inventor finds, a kind of abrasive composition that contains aminate, solvent, abrasive material and grinding promoter is applicable to for grinding semiconductor chip, can effectively remove semiconductor wafer surface residual kerf (Saw mark) after the mechanical type abrasion wheel grinding.
Therefore, purpose of the present invention, providing a kind of abrasive composition that comprises aminate, solvent, abrasive material and grind promoter.
Another purpose of the present invention be to provide a kind of by above-mentioned abrasive composition for the semiconductor wafer processing procedure, remove the method for kerf on wafer surface.
The accompanying drawing explanation
One specific embodiment party face of Fig. 1 graphic extension Ginding process of the present invention.
Embodiment
Be applicable to the abrasive material in grinding composite of the present invention, the group that optional free silicon dioxide (Silicon dioxide), cerium oxide (Cerium oxide), zirconia (Zirconium oxide), aluminium oxide (Aluminum oxide), titanium oxide (Titaniumoxide), nickel oxide (Nickel oxide) and composition thereof form.
Be applicable to monoamine compound, two aminates or three aminates that aminate in abrasive composition of the present invention includes, but not limited to have alkyl or hydroxyl, for example, methylamine (methylamine), dimethylamine (dimethylamine), ethamine (ethylamine), propylamine (propylamine), isopropylamine (isopropylamine), allylamine (allylamine), butylamine (butylamine), isobutyl amine (isobutylamine), cyclohexylamine (cyclohexylamine), benzene methanamine (benzylamine), monoethanolamine (monoethanolamine), diethanol amine (diethanolamine), triethanolamine (triethanolamine), isopropanolamine (isopropanolamine), diisopropanolamine (DIPA) (diisopropanolamine), N-methylethanolamine (N-methyl ethanolamine), N methyldiethanol amine (N-methyldiethanolamine), N, N-dimethylethanolamine (N, N-dimethyl ethanolamine), N, N-dimethyl amine (N, N-dimethylethylamine), N, N, N ', N ', N " five methyl diethylentriamine (N, N, N ', N ', N " pentamethyldiethylenetriamine), urea (urea), 1-amino-2-propyl alcohol (1-amino-2-propanol), 2-amino-1-propyl alcohol (2-amino-1-propanol), 3-amino-1-propyl alcohol (3-amino-1-propanol), 2-[2-(dimethylamino) ethyoxyl] ethanol (2-[2-(dimethylamino) ethoxy] ethanol), 2-(2-amino ethoxy) ethanol (2-(2-aminoethoxy) ethanol), ethylenediamine (ethylenediamine), two stretch second triamine (diethylenetriamine), three stretch second tetramine (triethylenetetramine), hexamethylene diamine (hexamethylenediamine), o-phenylenediamine (o-phenylenediamine), 1,2-propane diamine (1,2-propyldiamine), 1,3-propane diamine (1,3-propyldiamine), 1,5-diaminourea-3-amylalcohol (1,5-diamino-3-pentanol), DAP (1,3-diamino-2-propanol), piperazine (piperazine comprises piperazine hexahydrate and Piperazine anhydrous), 1-(2-amino-ethyl) piperazine (1-(2-aminoethyl) piperazine), N methyl piperazine (N-methylpiperazine), N-aminoethyl piperazine (N-aminoethylpiperazine) or Isosorbide-5-Nitrae-bis-aminopropyl piperazines (Isosorbide-5-Nitrae-piperazine dipropanamine) or its mixture.
According to an advantageous embodiment of the invention, described aminate is to select free monoethanolamine, 1-amino-2-propyl alcohol, ethylenediamine, two to stretch the group that second triamine, dimethylamine, piperazine, N-aminoethyl piperazine, diisopropanolamine (DIPA) and o-phenylenediamine and composition thereof form.
This case inventor discovery, the grinding promoter of using in abrasive composition of the present invention, can affect the remove effect of abrasive composition of the present invention to the semiconductor wafer kerf.
Being applicable to the grinding promoter in abrasive composition of the present invention, is the group that selects free polymine (Polyethylenimine), PPI (Polypropylenimine) and composition thereof to form.The molecular weight of described grinding promoter, preferably between 500 to 1,000, between 000, is more preferably between 500 to 800,000.
The solvent be applicable in constituent of the present invention there is no particular restriction, allly can dissolve the composition person of the present composition except abrasive material, all belongs to applicable solvent.According to a particular embodiment of the invention, described solvent is water.
The addition of the visual grinding of abrasive composition promoter is deployed into the abrasive composition of variable concentrations, also visual user demand, as convenient transportation or acceleration grinding effect, add the different multiples addition, be mixed with different multiples abrasive composition concentrate for required use.
Abrasive composition is when being used, and with regard to the concentration of each composition of composition, the content of described aminate preferably accounts for the 0.01%-20% of described abrasive composition, is more preferably to account for 0.05%-15%; The content of described abrasive material preferably accounts for the 0.05%-35% of described abrasive composition, is more preferably to account for 0.1%-30%; The content of described grinding promoter preferably accounts for the 0.0001%-10% of described abrasive composition, is more preferably to account for 0.001%-5%.Separately according to an advantageous embodiment of the invention, have >=9 pH value of abrasive composition of the present invention.
Abrasive composition of the present invention is applicable in the semiconductor wafer package processing procedure, and, with the grinding pad grinding wafers time, can directly use the present composition.Therefore, the present invention separately provides a kind of method of grinding semiconductor chip, and it comprises Chemicomechanically grinding composition of the present invention for grinding semiconductor chip, to remove the kerf (sawmark) on wafer surface.
With reference to figure 1; before using Chemicomechanically grinding composition of the present invention to carry out wafer thinning processing procedure; wherein one of mode is first to stick soft property protection glued membrane (102) in protected (101) of semiconductor wafer before grinding; in a grinder station, use emery wheel to carry out the first stage mechanical polishing to described semiconductor wafer; wafer surface material (100) is removed in a large number, thereby reach the purpose of thinning.Wafer surface after corase grind can stay inhomogeneous surface, is referred to as kerf (103), therefore need carry out second stage cmp processing procedure, wafer grinding is become to a smooth surface.
Second stage cmp processing procedure is to make described semiconductor wafer in a grinder station, being subjected to a grinding pressure contacts with a grinding pad, and pass into Chemicomechanically grinding composition of the present invention, described abrasive composition has a flow velocity, and when described milled processed is carried out, described grinding pad and described semiconductor wafer have respectively a rotating speed, semiconductor wafer surface is removed to the thickness of about 1-100 μ m, and wafer surface are evenly polished.
According to a particular embodiment of the invention, above-mentioned grinding pressure is preferably between 0.5psi-10psi; Be more preferably between 1psi-8psi.
Above-mentioned semiconductor wafer rotating speed is preferably between 10rpm-600rpm; Be more preferably between 30rpm-510rpm.
Above-mentioned grinding pad rotating speed is preferably between 10rpm-600rpm; Be more preferably between 30rpm-510rpm.
As for the flow velocity of the invention described above abrasive composition preferably between 50ml/min-500ml/min; More preferably between 50ml/min-350ml/min.
Below will embodiments of the present invention and effect be described with each embodiment and comparative example.Described embodiment and comparative example will use following chemicals and equipment, and if not specified, prepared and ground under the environment of normal temperature and pressure.It is noted that, described embodiment is the use for illustrating only, and should not be interpreted as restriction of the invention process.
Embodiment
Spent material and equipment
Grinder station: by Korea S G& P TECHNOLOGY company manufactures, and model is Poli 500.
Grinding pad: by US business's ROHM AND HAAS (Rohm and Haas) company, manufactured, model is IC1010.
Silicon blank wafer (bare silicon wafer): be the general commercially available silicon wafer purchased from US business Silicon Valley Microtronic A/S (Silicon ValleyMicroelectronics, Inc.).
Atomic force microscope (atomic force microscope, AFM): by Vecco instrument company, manufactured, model is Dimension 3100.
Polymine: can be purchased from the medicine suppliers such as Ai Kesi (ACROS), aldrich (ALDRICH).
Abrasive material: the silica abrasive that Akzo Nobel (Akzo Nobel) company manufactures, model is BINDZIL2040,9950, SP599L.
The manner of formulation of abrasive composition embodiment of the present invention and comparative example, if not specified, all the components mixes in advance and forms a mixture, more directly carries out milled processed.
The material variety that in each mixture, abrasive composition, each composition is used and shared percentage by weight and pH value, and the relevant operational parameter while carrying out milled processed, all be shown in following table 1.Removing of kerf is to change and reach with the visualization kerf with AFM tester surface roughness (Ra).
Solvent in each abrasive composition is water, if another not specified, the abrasive material in each abrasive composition is silica abrasive.Each embodiment shown in table 1 is all used identical tool parameters (being the flow velocity of grinding pressure, wafer rotation, grinding pad rotating speed and abrasive composition) with comparative example.
Below will inquire into described composition to meaning of the present invention and impact property according to the variation of each operating condition.
Different aminates and grinding promoter are on removing the impact of kerf:
Grinding condition: grinding pressure=3psi, grinding pad rotating speed=93rpm, wafer rotation=87rpm, flow velocity=200ml/min, time=1min.
* kerf: zero: remove fully, △: part removes, *: can't remove
Above-mentioned example 1 to 8 is not before adding grinding promoter, and arrange in pairs or groups different aminates and silica abrasive carry out milled processed, and the kerf of semiconductor wafer surface all can't effectively be removed.After not adding the lapping liquid grinding of grinding promoter, more than the wafer surface roughness is still and is greater than 10nm, it is very limited that kerf removes efficiency, and visualization can find to still have obvious kerf residual.
Yet from example 9 to 26, after adding grinding promoter, the grinding efficiency of having promoted lapping liquid, the wafer surface roughness after grinding can effectively be reduced to below 10nm, and it is level and smooth that wafer surface presents light, removes kerf fully residual.Add polymine at lapping liquid and can significantly promote the effect that kerf removes.
Claims (12)
1. a method that removes kerf on wafer surface in the semiconductor wafer processing procedure, it comprises with abrasive composition and carries out milled processed, wherein said abrasive composition comprises aminate, abrasive material, grinding promoter and solvent, wherein said aminate is to select free diethanol amine, 1-amino-2-propyl alcohol, ethylenediamine, two to stretch the group that second triamine, dimethylamine, piperazine, N-aminoethyl piperazine, diisopropanolamine (DIPA), o-phenylenediamine and composition thereof form, and wherein said grinding promoter is polymine, PPI or its mixture.
2. the method for claim 1, wherein said abrasive material is the group that selects free silicon dioxide, cerium oxide, zirconia, aluminium oxide, titanium oxide and nickel oxide and composition thereof to form.
3. the method for claim 1, the molecular weight of wherein said grinding promoter is between 500 to 1,000, between 000.
4. the method for claim 1, the molecular weight of wherein said grinding promoter is between 500 to 800,000.
5. the method for claim 1, wherein said solvent is water.
6. the method for claim 1, the content of wherein said aminate accounts for the 0.01%-20% of described abrasive composition total weight.
7. the method for claim 1, the content of wherein said aminate accounts for the 0.05%-15% of described abrasive composition total weight.
8. the method for claim 1, the content of wherein said abrasive material accounts for the 0.05%-35% of described abrasive composition total weight.
9. the method for claim 1, the content of wherein said abrasive material accounts for the 0.1%-30% of described abrasive composition total weight.
10. the method for claim 1, the content of wherein said grinding promoter accounts for the 0.0001%-10% of described abrasive composition total weight.
11. the method for claim 1, the content of wherein said grinding promoter accounts for the 0.001%-5% of described abrasive composition total weight.
12. the method for claim 1, the pH value of wherein said abrasive composition >=9.
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| CN1243856A (en) * | 1998-08-04 | 2000-02-09 | 长兴化学工业股份有限公司 | Chemical Mechanical Polishing Composition for Semiconductor Process |
| CN1282775A (en) * | 1999-07-28 | 2001-02-07 | 长兴化学工业股份有限公司 | Chemical mechanical polishing composition and method |
| CN1746254A (en) * | 2004-09-09 | 2006-03-15 | 福吉米株式会社 | Polishing composition and polishing method using the same |
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| CN1243856A (en) * | 1998-08-04 | 2000-02-09 | 长兴化学工业股份有限公司 | Chemical Mechanical Polishing Composition for Semiconductor Process |
| CN1282775A (en) * | 1999-07-28 | 2001-02-07 | 长兴化学工业股份有限公司 | Chemical mechanical polishing composition and method |
| CN1746254A (en) * | 2004-09-09 | 2006-03-15 | 福吉米株式会社 | Polishing composition and polishing method using the same |
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