CN104745090A - Chemically mechanical polishing liquid and application thereof - Google Patents
Chemically mechanical polishing liquid and application thereof Download PDFInfo
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- CN104745090A CN104745090A CN201310728668.3A CN201310728668A CN104745090A CN 104745090 A CN104745090 A CN 104745090A CN 201310728668 A CN201310728668 A CN 201310728668A CN 104745090 A CN104745090 A CN 104745090A
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
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- Organic Chemistry (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Abstract
The invention discloses a chemically mechanical polishing liquid for flattening a barrier layer and a use method thereof; the polishing liquid contains grinding particles, an azole compound, a complexing agent, a polyacrylic acid compound and/or a salt thereof, a non-ionic surfactant and an oxidant. The chemically mechanical polishing liquid can meet requirements on the polishing rate and ratio of various materials in the barrier layer polishing process, has highly strong correction ability on defects of the surface of a semiconductor device, rapidly achieves flattening, improves the work efficiency, and reduces the production costs.
Description
Technical field
The invention discloses a kind of chemical mechanical polishing liquid for blocking layer planarization and using method thereof
Background technology
In integrated circuit fabrication, the standard of interconnection technique is in improve, along with the interconnection increase of the number of plies and reducing of technology feature size, also more and more higher to the requirement of silicon chip surface planeness, if there is no the ability of planarization, it is very limited for creating complicated and intensive structure on a semiconductor wafer, and cmp method CMP is exactly the most effective means that can realize whole silicon chip planarization.
CMP is exactly use a kind of mixture containing abrasive material and polishing pad polishing integrated circuit surface.In typical cmp method, substrate is directly contacted with rotating polishing pad, applies pressure with a loads at substrate back.During polishing, pad and operator's console rotate, the power simultaneously kept down at substrate back, is applied on pad by abrasive material and chemically reactive solution (being commonly referred to polishing fluid or polishing slurries), this polishing fluid with just start to carry out polishing process at the film generation chemical reaction of polishing.
Along with integrated circuit technique is to sub-micro (32, 28nm) future development, the performance affecting circuit that the stray capacitance caused because characteristic dimension reduces is further serious, for reducing this impact, ultra-low dielectric materials (ULK) just must be adopted to reduce stray capacitance between adjacent wires, current more employing ultra-low dielectric materials is Coral, except wanting strict control surface pollutent index and stopping except metallic corrosion in CMP process, also to have lower butterfly depression and polishing homogeneity guarantee electrical property more reliably, need to remove barrier metal fast under shorter time and lower pressure in the planarization process on particularly blocking layer, capping oxide compound also can well stop at ultra-low dielectric materials surface, form interconnection line, and it is insensitive to small size figure.This just proposes higher challenge to CMP, because ultra-low dielectric materials is the silicon oxide mixing carbon usually, to silicon-dioxide, there is similar superficiality, the residual thickness of stop-layer be controlled, the ability of regulation and control of very strong Selection radio will be had, also will have the features such as very high stability and easy cleaning.This patent aims to provide a kind of barrier polishing solution be suitable in ULK-copper-connection processing procedure, there is the technique stop performance at high barrier removal rates and ultra-low dielectric materials interface under relatively mild condition, and well can control butterfly depression, metallic corrosion and surface contaminant index.
In existent technique, CN1400266 discloses a kind of alkali barrier polishing fluid, and this polishing fluid comprises abrasive silica, and aminated compounds and this polishing fluid of nonionogenic tenside can produce corrosion to copper.CN101372089A discloses a kind of alkali barrier polishing fluid, and this polishing fluid comprises abrasive silica, corrosion inhibitor, oxygenant, non-ion fluorin surfactant, aromatic sulfonic acid oxidant compound, the polishing speed on the blocking layer of this polishing fluid is lower, and productive rate is lower.CN101012356A discloses a kind of blocked acidic layer polishing fluid, and this polishing fluid comprises oxygenant, the silica dioxide granule that part is covered by aluminium, inhibitor and complexing agent, and this acid polishing slurry exists the defect serious to copper corrosion.
Summary of the invention
Problem to be solved by this invention is to provide a kind of barrier polishing be suitable in ULK-copper-connection processing procedure, there is the polishing speed on high blocking layer (TaN/Ta), and meet in barrier polishing technique the removal speed of silicon-dioxide (Teos), copper and ultra-low dielectric materials (ULK) and the requirement of removing rate selection ratio, and have very strong rectification ability to the defect of semiconductor device surface, pollutent is residual few, the polishing fluid that stability is high.
The invention provides a kind of chemical mechanical polishing liquid being applied to blocking layer planarization, this polishing fluid comprises abrasive grains, azole compounds, complexing agent, polyacrylic compounds and/or its salt, nonionogenic tenside and oxygenant.
Wherein abrasive grains can be this area and commonly uses abrasive grains, as the silicon-dioxide and/or polymer beads etc. of silicon-dioxide, aluminium sesquioxide, cerium dioxide, adulterated al; The mass percent concentration of abrasive grains is preferably 1 ~ 20%, and better is 2 ~ 10%; The particle diameter of abrasive grains is preferably 20 ~ 150nm, and that better is 30 ~ 120nm.
Wherein azole compounds, be preferably selected from following in one or more: benzotriazole, methyl benzotriazazole, 5-phenyl tetrazole, mercaptophenyl tetrazole, benzoglyoxaline, aphthotriazoles and/or 2-Mercapto-benzothiazole.The mass percent concentration of described azole compounds is preferably 0.001 ~ 2%, and better is 0.01 ~ 1%.
Its complexing agent is one or more of organic acid, organic phosphoric acid and ammonia carboxylation compound.Preferably be selected from following in one or more: acetic acid, propionic acid, oxalic acid, propanedioic acid, succinic acid, citric acid, 2-phosphonobutane-1,2,4-tricarboxylic acid, Amino Trimethylene Phosphonic Acid, 1-Hydroxy Ethylidene-1,1-Diphosphonic Acid, ethylene diamine tetra methylene phosphonic acid and/or glycine.The concentration of the mass percent of described complexing agent is preferably 0.001 ~ 2%, and better is 0.01 ~ 1%.
Wherein polyacrylic compounds is polyacrylic acid, and described salt is preferably ammonium salt, sylvite or sodium salt.The molecular weight of described polyacrylic compounds and/or its salt is preferably 1000-20000, and that better is 2000-10000.The concentration of described polyacrylic compounds and/or the mass percent of its salt is preferably 0.001 ~ 1%, and better is 0.01 ~ 0.5%.
Wherein nonionogenic tenside be preferably selected from following in one or more: C
10 ~ 18aliphatic alcohol polyethenoxy (n) ether (n=7 ~ 30), C
8 ~ 9alkylphenol-polyethenoxy (n) ether (n=8 ~ 200), C
12 ~ 18the TritonDF-18 of the TritonCF-10 of aliphatic amine polyoxyethylene (n) ether (n=10 ~ 60), Dow Chemical, the TritonCF-21 of Dow Chemical, the TritonDF-12 of Dow Chemical, the TritonDF-16 of Dow Chemical and/or Dow Chemical.The mass percent concentration of nonionogenic tenside is preferably: 0.001 ~ 0.5%, and better is 0.01 ~ 0.2%.
Wherein oxygenant be preferably selected from following in one or more: hydrogen peroxide, Peracetic Acid, Potassium Persulphate and/or ammonium persulphate.The mass percent concentration of described oxygenant is preferably 0.01 ~ 5%, and better is 0.1 ~ 2%.
The pH value of wherein said chemical mechanical polishing liquid is 8.0 ~ 12.0, and better is 9.0 ~ 11.0.
Chemical mechanical polishing liquid of the present invention can also comprise other this area additives such as pH adjusting agent and sterilant.
Chemical mechanical polishing liquid of the present invention can be prepared as follows: mix in proportion, other components except oxygenant by pH adjusting agent (as KOH or HNO
3) be adjusted to required pH value, use front oxidizer, mix.
Agents useful for same of the present invention and raw material are all commercially.
Positive progressive effect of the present invention is: chemical mechanical polishing liquid of the present invention can meet in barrier polishing process the polishing speed of various material and Selection radio requirement, very strong rectification ability is had to the defect of semiconductor device surface, realize planarization fast, increase work efficiency, reduce production cost.
Embodiment
Mode below by embodiment further illustrates the present invention, but does not limit the present invention among described scope of embodiments with this.
Embodiment
Table 1 gives contrast polishing fluid 1 ~ 2 of the present invention and polishing fluid of the present invention 1 ~ 15, by the formula given in table, mixes, other components except oxygenant with KOH or HNO
3be adjusted to required pH value.Use front oxidizer, mix.Water is surplus.
Table 1 contrasts polishing fluid 1 ~ 2 and polishing fluid of the present invention 1 ~ 15
Effect example 1
Contrast polishing fluid 1 ~ 2 and polishing fluid of the present invention 1 ~ 9 is adopted to carry out polishing according to following condition to copper (Cu), tantalum (Ta), silicon-dioxide (TEOS) and ultra-low dielectric materials (ULK).Polishing condition: polishing machine platform is 8 " Mirra board, polishing pad is Fujibo pad, and overdraft is 1.5psi, and rotating speed is polishing disk/rubbing head=93/87rpm, and polishing fluid flow velocity is 150ml/min, and polishing time is 1min.
Table 2 contrasts the removal speed of polishing fluid 1 ~ 2 and polishing fluid of the present invention 1 ~ 9 pair of copper (Cu), tantalum (Ta), silicon-dioxide (TEOS) and ultra-low dielectric materials (ULK)
From table 2, with contrast polishing fluid 1 with contrast polishing fluid 2 and compare, polishing fluid of the present invention can obtain the removal speed of higher blocking layer Ta and silicon-dioxide (TEOS), obtain the removal speed of lower ultra-low dielectric materials ULK simultaneously, in polishing process, the surface of ultra-low dielectric materials ULK can be stopped at preferably.
Effect example 2
Contrast polishing fluid 1 ~ 2 and polishing fluid of the present invention 1 ~ 7 is adopted to carry out polishing according to following condition to the figuratum copper wafer of band.Polishing condition: polishing machine platform is 8 " Mirra board, polishing pad is Fujibo pad, and overdraft is 1.5psi, and rotating speed is polishing disk/rubbing head=93/87rpm, and polishing fluid flow velocity is 150ml/min, and polishing time is 1min.
Table 3 contrasts polishing fluid 1 ~ 2 and polishing fluid of the present invention 1 ~ 7 contrasts the rectification ability after the figuratum copper wafer polishing of band
Wherein, above described Dishing, the butterfly before referring to barrier polishing on metal gasket caves in (dust), and Erosion refers to the erosion (dust) of blocking layer in fine line region (50%line),
refer to the rectification ability value after polishing.
As can be seen from Table 3, with contrast polishing fluid 1 with contrast polishing fluid 2 and compare, polishing fluid of the present invention can revise the saucerization and erosion that future produces on wafer preferably, obtains good wafer pattern.
Should be understood that, wt% of the present invention all refers to mass percentage.
Be described in detail specific embodiments of the invention above, but it is just as example, the present invention is not restricted to specific embodiment described above.To those skilled in the art, any equivalent modifications that the present invention is carried out and substituting also all among category of the present invention.Therefore, equalization conversion done without departing from the spirit and scope of the invention and amendment, all should contain within the scope of the invention.
Claims (26)
1. for a chemical mechanical polishing liquid for blocking layer planarization, it is characterized in that, described polishing fluid comprises abrasive grains, azole compounds, complexing agent, polyacrylic compounds and/or its salt, nonionogenic tenside and oxygenant.
2. polishing fluid as claimed in claim 1, is characterized in that, described abrasive grains be selected from silicon-dioxide, aluminium sesquioxide, cerium dioxide, the silicon-dioxide of adulterated al and/or polymer beads one or more.
3. polishing fluid as claimed in claim 1, it is characterized in that, the concentration of described abrasive grains is mass percent 1 ~ 20%.
4. polishing fluid as claimed in claim 3, it is characterized in that, the concentration of described abrasive grains is mass percent 2 ~ 10%.
5. polishing fluid as claimed in claim 1, it is characterized in that, the particle diameter of described abrasive grains is 20 ~ 150nm.
6. polishing fluid as claimed in claim 5, it is characterized in that, the particle diameter of described abrasive grains is 30 ~ 120nm.
7. polishing fluid as claimed in claim 1, it is characterized in that, described azole compounds be selected from following in one or more: benzotriazole, methyl benzotriazazole, 5-phenyl tetrazole, mercaptophenyl tetrazole, benzoglyoxaline, aphthotriazoles and/or 2-Mercapto-benzothiazole.
8. polishing fluid as claimed in claim 1, it is characterized in that, the concentration of described azole compounds is mass percent 0.001 ~ 2%.
9. polishing fluid as claimed in claim 8, it is characterized in that, the concentration of described azole compounds is mass percent 0.01 ~ 1%.
10. polishing fluid as claimed in claim 1, is characterized in that, described complexing agent is one or more in organic acid, organic phosphoric acid and/or ammonia carboxylation compound.
11. polishing fluids as claimed in claim 10, it is characterized in that, described complexing agent be selected from following in one or more: acetic acid, propionic acid, oxalic acid, propanedioic acid, succinic acid, citric acid, 2-phosphonobutane-1,2,4-tricarboxylic acid, Amino Trimethylene Phosphonic Acid, 1-Hydroxy Ethylidene-1,1-Diphosphonic Acid, ethylene diamine tetra methylene phosphonic acid and/or glycine.
12. polishing fluids as claimed in claim 1, is characterized in that, the concentration of described complexing agent is mass percent 0.001 ~ 2%.
13. polishing fluids as claimed in claim 12, is characterized in that, the concentration of described complexing agent is mass percent 0.01 ~ 1%.
14. polishing fluids as claimed in claim 1, it is characterized in that, described polyacrylic compounds is polyacrylic acid, and described salt is ammonium salt, sylvite or sodium salt.
15. polishing fluids as claimed in claim 1, is characterized in that, the molecular weight of described polyacrylic compounds and/or its salt is 1000-20000.
16. polishing fluids as claimed in claim 15, is characterized in that, the molecular weight of described polyacrylic compounds and/or its salt is 2000-10000.
17. polishing fluids as claimed in claim 1, is characterized in that, the concentration of described polyacrylic compounds and/or its salt is mass percent 0.001 ~ 1%.
18. polishing fluids as claimed in claim 17, is characterized in that, the concentration of described polyacrylic compounds and/or its salt is mass percent 0.01 ~ 0.5%.
19. polishing fluids as claimed in claim 1, is characterized in that, described nonionogenic tenside be selected from following in one or more: C
10 ~ 18aliphatic alcohol polyethenoxy (n) ether (n=7 ~ 30), C
8 ~ 9alkylphenol-polyethenoxy (n) ether (n=8 ~ 200), C
12 ~ 18aliphatic amine polyoxyethylene (n) ether (n=10 ~ 60), TritonCF-10, TritonCF-21, TritonDF-12, TritonDF-16 and/or TritonDF-18.
20. polishing fluids as claimed in claim 1, is characterized in that, the concentration of described nonionogenic tenside is mass percent 0.001 ~ 0.5%.
21. polishing fluids as claimed in claim 20, is characterized in that, the concentration of described nonionogenic tenside is mass percent 0.01 ~ 0.2%.
22. polishing fluids as claimed in claim 1, is characterized in that, described oxygenant be selected from following in one or more: hydrogen peroxide, Peracetic Acid, Potassium Persulphate and/or ammonium persulphate.
23. polishing fluids as claimed in claim 1, is characterized in that, the concentration of described oxygenant is mass percent 0.01 ~ 5%.
24. polishing fluids as claimed in claim 23, is characterized in that, the concentration of described oxygenant is mass percent 0.1 ~ 2%.
25. polishing fluids as claimed in claim 1, is characterized in that, the pH value of described chemical mechanical polishing liquid is 8.0 ~ 12.0.
26. polishing fluids as claimed in claim 25, is characterized in that, the pH value of described chemical mechanical polishing liquid is 9.0 ~ 11.0.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310728668.3A CN104745090A (en) | 2013-12-25 | 2013-12-25 | Chemically mechanical polishing liquid and application thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310728668.3A CN104745090A (en) | 2013-12-25 | 2013-12-25 | Chemically mechanical polishing liquid and application thereof |
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| Publication Number | Publication Date |
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| CN104745090A true CN104745090A (en) | 2015-07-01 |
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| CN201310728668.3A Pending CN104745090A (en) | 2013-12-25 | 2013-12-25 | Chemically mechanical polishing liquid and application thereof |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2018120812A1 (en) * | 2016-12-28 | 2018-07-05 | 安集微电子科技（上海）股份有限公司 | Chemical mechanical polishing liquid used for planarizing barrier layer |
| WO2018120808A1 (en) * | 2016-12-28 | 2018-07-05 | 安集微电子科技（上海）股份有限公司 | Chem-mechanical polishing liquid for barrier layer |
| WO2019129103A1 (en) * | 2017-12-27 | 2019-07-04 | 安集微电子（上海）有限公司 | Chemical mechanical polishing solution |
-
2013
- 2013-12-25 CN CN201310728668.3A patent/CN104745090A/en active Pending
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2018120812A1 (en) * | 2016-12-28 | 2018-07-05 | 安集微电子科技（上海）股份有限公司 | Chemical mechanical polishing liquid used for planarizing barrier layer |
| WO2018120808A1 (en) * | 2016-12-28 | 2018-07-05 | 安集微电子科技（上海）股份有限公司 | Chem-mechanical polishing liquid for barrier layer |
| CN108250973A (en) * | 2016-12-28 | 2018-07-06 | 安集微电子科技（上海）股份有限公司 | A kind of chemical mechanical polishing liquid for barrier layer planarization |
| CN108250972A (en) * | 2016-12-28 | 2018-07-06 | 安集微电子科技（上海）股份有限公司 | A kind of chemical mechanical polishing liquid for barrier layer planarization |
| CN108250972B (en) * | 2016-12-28 | 2021-09-21 | 安集微电子科技（上海）股份有限公司 | Chemical mechanical polishing solution for barrier layer planarization |
| TWI829623B (en) * | 2016-12-28 | 2024-01-21 | 大陸商安集微電子科技(上海)股份有限公司 | Chemical mechanical polishing slurry for the planarization of the barrier film |
| WO2019129103A1 (en) * | 2017-12-27 | 2019-07-04 | 安集微电子（上海）有限公司 | Chemical mechanical polishing solution |
| CN109971357A (en) * | 2017-12-27 | 2019-07-05 | 安集微电子（上海）有限公司 | A kind of chemical mechanical polishing liquid |
| CN109971357B (en) * | 2017-12-27 | 2021-12-07 | 安集微电子（上海）有限公司 | Chemical mechanical polishing solution |
| US11746257B2 (en) | 2017-12-27 | 2023-09-05 | Anji Microelectronics (Shanghai) Co., Ltd. | Chemical mechanical polishing solution |
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Application publication date: 20150701 |