CN101894651A - Method for preparing non-polar GaN-based dilute magnetic semiconductor material by using ion implantation - Google Patents
Method for preparing non-polar GaN-based dilute magnetic semiconductor material by using ion implantation Download PDFInfo
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- CN101894651A CN101894651A CN 201010201489 CN201010201489A CN101894651A CN 101894651 A CN101894651 A CN 101894651A CN 201010201489 CN201010201489 CN 201010201489 CN 201010201489 A CN201010201489 A CN 201010201489A CN 101894651 A CN101894651 A CN 101894651A
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- 239000000463 material Substances 0.000 title claims abstract description 69
- 230000005291 magnetic effect Effects 0.000 title claims abstract description 45
- 239000004065 semiconductor Substances 0.000 title claims abstract description 40
- 238000000034 method Methods 0.000 title claims abstract description 29
- 238000005468 ion implantation Methods 0.000 title abstract description 4
- 238000000137 annealing Methods 0.000 claims abstract description 21
- 238000002360 preparation method Methods 0.000 claims abstract description 7
- 150000002500 ions Chemical class 0.000 claims description 40
- 238000002347 injection Methods 0.000 claims description 13
- 239000007924 injection Substances 0.000 claims description 13
- 239000010409 thin film Substances 0.000 claims description 12
- 239000000758 substrate Substances 0.000 claims description 10
- 229910052761 rare earth metal Inorganic materials 0.000 claims description 9
- 230000007704 transition Effects 0.000 claims description 7
- 229910052751 metal Inorganic materials 0.000 claims description 6
- 229910052692 Dysprosium Inorganic materials 0.000 claims description 4
- 229910052693 Europium Inorganic materials 0.000 claims description 4
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 4
- 229910052772 Samarium Inorganic materials 0.000 claims description 4
- 229910052771 Terbium Inorganic materials 0.000 claims description 4
- 229910052742 iron Inorganic materials 0.000 claims description 4
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 claims description 4
- 229910052720 vanadium Inorganic materials 0.000 claims description 4
- 229910052804 chromium Inorganic materials 0.000 claims description 3
- 238000002248 hydride vapour-phase epitaxy Methods 0.000 claims description 3
- 229910021645 metal ion Inorganic materials 0.000 claims description 3
- 238000001451 molecular beam epitaxy Methods 0.000 claims description 3
- 238000005516 engineering process Methods 0.000 abstract description 3
- 230000003287 optical effect Effects 0.000 abstract 1
- 238000010586 diagram Methods 0.000 description 5
- 230000009286 beneficial effect Effects 0.000 description 3
- 230000005611 electricity Effects 0.000 description 3
- 230000005294 ferromagnetic effect Effects 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 238000002513 implantation Methods 0.000 description 2
- 150000002910 rare earth metals Chemical class 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 239000013078 crystal Substances 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 230000005307 ferromagnetism Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000000696 magnetic material Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
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Abstract
本发明公开了一种制备非极性GaN基稀磁半导体材料的方法，该方法采用离子注入及后退火工艺实现非极性GaN基稀磁半导体材料的制备，包括以下步骤：对GaN基底材料进行离子注入；以及对离子注入后的GaN基底材料进行快速退火处理。利用本发明可以获得居里温度(Tc)高于室温的非极性GaN基稀磁半导体材料。非极性GaN基稀磁半导体材料具有独特的面内结构、光学、电学和磁学性质的各向异性分布特性。非极性GaN基稀磁半导体材料的高居里温度性质和独特的面内各向异性分布规律，使其在磁光、磁电等领域具有重要的应用价值。
The invention discloses a method for preparing a non-polar GaN-based dilute magnetic semiconductor material. The method adopts ion implantation and post-annealing technology to realize the preparation of a non-polar GaN-based dilute magnetic semiconductor material. The method comprises the following steps: performing GaN base material ion implantation; and rapid annealing of the ion-implanted GaN base material. The invention can obtain the nonpolar GaN-based dilute magnetic semiconductor material whose Curie temperature (Tc) is higher than room temperature. Nonpolar GaN-based dilute magnetic semiconductor materials have unique anisotropy distribution characteristics of in-plane structure, optical, electrical and magnetic properties. The high Curie temperature properties and unique in-plane anisotropy distribution of non-polar GaN-based dilute magnetic semiconductor materials make them have important application values in the fields of magneto-optic and magnetoelectric.
Description
Technical field
The present invention relates to the non-polar GaN-based dilute magnetic semiconductor material technical field, relate in particular to a kind of ion that adopts and inject the method for preparing non-polar GaN-based dilute magnetic semiconductor material.
Background technology
Dilute magnetic semiconductor is melted into a whole the semiconducting behavior and the magnetic performance of material, is expected to develop in fields such as magnetoelectricity, magneto-optic and magneto-optic electricity have that speed is fast, low in energy consumption, integrated level is high and the Multifunction spin electric device of characteristics such as non-volatile.Yet prepare the spin electric device with practicability, it is an essential condition that the Curie temperature of rare magnetic material is higher than room temperature.So the dilute magnetic semiconductor with the above Curie temperature of room temperature is subjected to researcher's extensive concern.
Nearest theory and experimental study show: the GaN sill of doping transiting group metal elements or rare earth element is hopeful to obtain the above ferromagnetism of room temperature most, and has obtained the achievement in research that attracts people's attention.At present, the GaN based diluted magnetic semiconductor all is the polar surface material along the growth of c axle.Recently, the nonpolar face GaN material enjoys the researcher to pay close attention to owing to can significantly improving the photoelectric device performance.Had correlative study to show, because the difference of surface atom structure, one-tenth bond energy, p-type doped chemical Mg, transiting group metal elements and the doping efficiency of rare-earth metals element in the non-polar GaN material are more high accordingly than common c face GaN material.
Theoretical Calculation shows simultaneously, high hole concentration and high doped chemical solid solubility help improving the Curie temperature and the ferromagnetic property of non-polar GaN-based dilute magnetic semiconductor material, so we think that non-polar GaN-based dilute magnetic semiconductor material is expected to obtain the ferromagnetic property more more superior than polar GaN base diluted magnetic semiconductor material.
In addition, because polarity crystal orientation [0001] is included in the GaN non-polar plane, cause intra-face anisotropies such as nonpolar face GaN film lattice structure, stress, polarization intensity to distribute, thereby cause the anisotropy of nonpolar face GaN pellicular front inner structure, optics, electricity and magnetic property.These character still are that the device application field all is significant in theory research.
Summary of the invention
(1) technical problem that will solve
In view of this, main purpose of the present invention is to provide a kind of ion that adopts to inject the method for preparing non-polar GaN-based dilute magnetic semiconductor material, to obtain to have the non-polar GaN-based dilute magnetic semiconductor thin-film material than high-curie temperature.
(2) technical scheme
For achieving the above object, the invention provides a kind of method for preparing non-polar GaN-based dilute magnetic semiconductor material, this method adopts ion injection and post growth annealing to realize the preparation of non-polar GaN-based dilute magnetic semiconductor material, may further comprise the steps:
The GaN base material is carried out ion to be injected; And
GaN base material after the ion injection is carried out short annealing to be handled.
In the such scheme, described GaN base material is the non-polar GaN monocrystal thin films material of a face [11-20] or m face [1-100].
In the such scheme, described GaN base material is the non-polar GaN monocrystal thin films material of N type, P type or involuntary doping.
In the such scheme, described non-polar GaN monocrystal thin films material is prepared from Si substrate, SiC substrate or GaN substrate by MOCVD, MBE or HVPE method.
In the such scheme, it is transition element or rare earth element that described ion injects used metallic element ion, or the common injection of at least two metal ion species.
In the such scheme, described transition element is Fe, Cr, V or Co, and described rare earth element is Eu, Sm, Dy or Tb.
In the such scheme, the described ion that carries out injects energy of ions between 100KeV～500KeV when injecting, and the dosage that injects ion is between 1 * 10
13Cm
-2～1 * 10
17Cm
-2
In the such scheme, described when carrying out short annealing and handling, annealing temperature is between 700 ℃～1000 ℃, and annealing time was between 30 seconds～30 minutes.
(3) beneficial effect
From technique scheme as can be seen, the present invention has following beneficial effect:
1, utilize the present invention can obtain the non-polar GaN-based dilute magnetic semiconductor material that Curie temperature (Tc) is higher than room temperature.
2, non-polar GaN-based dilute magnetic semiconductor material has the anisotropy distribution character of unique face inner structure, optics, electricity and magnetic property.The high-curie temperature character of non-polar GaN-based dilute magnetic semiconductor material and unique intra-face anisotropy regularity of distribution make it have important use in fields such as magneto-optic, magnetoelectricities and are worth.
3, the present invention will open up the frontier of GaN based diluted magnetic semiconductor research.
Description of drawings
Fig. 1 is the method flow diagram that employing ion provided by the invention injects the preparation non-polar GaN-based dilute magnetic semiconductor material;
Fig. 2 is the schematic diagram according to embodiment of the invention growing GaN base material on substrate;
Fig. 3 carries out the schematic diagram that ion injects according to the embodiment of the invention on the GaN base material;
Fig. 4 is the schematic diagram of the non-polar GaN-based dilute magnetic semiconductor material for preparing according to the embodiment of the invention.
Embodiment
For making the purpose, technical solutions and advantages of the present invention clearer, below in conjunction with specific embodiment, and with reference to accompanying drawing, the present invention is described in more detail.
As shown in Figure 1, Fig. 1 is the method flow diagram that employing ion provided by the invention injects the preparation non-polar GaN-based dilute magnetic semiconductor material, this method adopts ion injection and post growth annealing to realize the preparation of non-polar GaN-based dilute magnetic semiconductor material, may further comprise the steps:
The GaN base material is carried out ion to be injected; And
GaN base material after the ion injection is carried out short annealing to be handled.
Wherein, described GaN base material is the non-polar GaN monocrystal thin films material of a face [11-20] or m face [1-100], and perhaps the GaN base material is the non-polar GaN monocrystal thin films material of N type, P type or involuntary doping.This non-polar GaN monocrystal thin films material is prepared from Si substrate, SiC substrate or GaN substrate by MOCVD, MBE or HVPE method.
It is transition element or rare earth element that ion injects used metallic element ion, or the common injection of at least two metal ion species.Wherein, transition element is Fe, Cr, V or Co, and rare earth element is Eu, Sm, Dy or Tb.
When carrying out the ion injection, inject energy of ions between 100KeV～500KeV, the dosage that injects ion is between 1 * 10
13Cm
-2～1 * 10
17Cm
-2
When carrying out the short annealing processing, annealing temperature is between 700 ℃～1000 ℃, and annealing time was between 30 seconds～30 minutes.
Following mask body is that example describes its preparation process in detail to adopt ion implantation technique growing nonpolar GaN:Cr dilute magnetic semiconductor material on the r surface sapphire substrate.
Step 1: adopt the MOCVD technology, the nonpolar a face GaN material of about 2 micron thickness of growth on the r surface sapphire substrate, as shown in Figure 2.
Step 2: the nonpolar a face GaN thin-film material of gained is carried out ion inject, implantation temperature is a room temperature, and injecting ion is the Cr ion, and implantation dosage is 5 * 10
16Cm
-2, the injection energy is 200KeV, as shown in Figure 3.
Step 3: the sample after the ion injection is carried out short annealing handle, annealing temperature is 900 ℃, and annealing time is 5 minutes, the final non-polar GaN that forms as shown in Figure 4; The Cr dilute magnetic semiconductor.
The foregoing description is of the present invention giving an example, and according to principle of the present invention, also has other to adopt the scheme of the rare magnetic thin film material of ion injection method growing nonpolar GaN base.As: used nonpolar GaN film material was (as Si, SiC, the GaN substrate etc.) that are grown on the different substrates when ion injected; When injecting, adopt in ion monoenergetic attitude or multipotency attitude ion to inject; Ion adopts other transition group or rare-earth metals element (as Fe, V, Co, Sm, Eu, Tb, Dy etc.) when injecting; And adopt common injection of two or more metals etc. on this basis.
Above-described specific embodiment; purpose of the present invention, technical scheme and beneficial effect are further described; institute is understood that; the above only is specific embodiments of the invention; be not limited to the present invention; within the spirit and principles in the present invention all, any modification of being made, be equal to replacement, improvement etc., all should be included within protection scope of the present invention.
Claims (10)
1. method for preparing non-polar GaN-based dilute magnetic semiconductor material, this method adopt ion to inject and post growth annealing is realized may further comprise the steps the preparation of non-polar GaN-based dilute magnetic semiconductor material:
The GaN base material is carried out ion to be injected; And
GaN base material after the ion injection is carried out short annealing to be handled.
2. the method for preparing non-polar GaN-based dilute magnetic semiconductor material according to claim 1 is characterized in that, described GaN base material is the non-polar GaN monocrystal thin films material of a face [11-20] or m face [1-100].
3. the method for preparing non-polar GaN-based dilute magnetic semiconductor material according to claim 1 is characterized in that, described GaN base material is the non-polar GaN monocrystal thin films material of N type, P type or involuntary doping.
4. according to claim 2 or the 3 described methods that prepare non-polar GaN-based dilute magnetic semiconductor material, it is characterized in that described non-polar GaN monocrystal thin films material is prepared from Si substrate, SiC substrate or GaN substrate by MOCVD, MBE or HVPE method.
5. the method for preparing non-polar GaN-based dilute magnetic semiconductor material according to claim 1 is characterized in that, it is transition element or rare earth element that described ion injects used metallic element ion, or the common injection of at least two metal ion species.
6. the method for preparing non-polar GaN-based dilute magnetic semiconductor material according to claim 5 is characterized in that, described transition element is Fe, Cr, V or Co, and described rare earth element is Eu, Sm, Dy or Tb.
7. the method for preparing non-polar GaN-based dilute magnetic semiconductor material according to claim 1 is characterized in that, the described ion that carries out injects energy of ions between 100KeV～500KeV when injecting.
8. the method for preparing non-polar GaN-based dilute magnetic semiconductor material according to claim 1 is characterized in that, the described ion that carries out is when injecting, and the dosage that injects ion is between 1 * 10
13Cm
-2～1 * 10
17Cm
-2
9. the method for preparing non-polar GaN-based dilute magnetic semiconductor material according to claim 1 is characterized in that, described when carrying out short annealing and handling, annealing temperature is between 700 ℃～1000 ℃.
10. the method for preparing non-polar GaN-based dilute magnetic semiconductor material according to claim 1 is characterized in that, described when carrying out short annealing and handling, annealing time was between 30 seconds～30 minutes.
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1388537A (en) * | 2002-05-31 | 2003-01-01 | 南京大学 | Ion implantation process of preparing GaN-based diluted magnetic semiconductor material |
| CN1591784A (en) * | 2003-08-29 | 2005-03-09 | 中国科学院半导体研究所 | Method for producing magnet/semiconductor hybrid structure by big metering ion implantation technology |
| US6955858B2 (en) * | 2001-12-07 | 2005-10-18 | North Carolina State University | Transition metal doped ferromagnetic III-V nitride material films and methods of fabricating the same |
-
2010
- 2010-06-09 CN CN 201010201489 patent/CN101894651A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6955858B2 (en) * | 2001-12-07 | 2005-10-18 | North Carolina State University | Transition metal doped ferromagnetic III-V nitride material films and methods of fabricating the same |
| CN1388537A (en) * | 2002-05-31 | 2003-01-01 | 南京大学 | Ion implantation process of preparing GaN-based diluted magnetic semiconductor material |
| CN1591784A (en) * | 2003-08-29 | 2005-03-09 | 中国科学院半导体研究所 | Method for producing magnet/semiconductor hybrid structure by big metering ion implantation technology |
Non-Patent Citations (1)
| Title |
|---|
| 《半导体技术》 20081231 孙莉莉等 非极性a面p型GaN∶Mn薄膜的结构、形貌和铁磁性质 第33卷, 2 * |
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Open date: 20101124 |