CN101859789A - AC light emitting device with increased light extraction efficiency and method of manufacturing the same - Google Patents

Abstract

The invention discloses an alternating current light-emitting device with the function of increasing light extraction efficiency.A first light-emitting diode and a second light-emitting diode are arranged on a substrate, the substrate is provided with a plurality of grooves, a separation space is arranged between the first light-emitting diode and the second light-emitting diode to insulate the light-emitting diodes, and the first light-emitting diode and the second light-emitting diode are connected through a conductor so that the alternating current light-emitting device can completely use alternating current to emit light. The invention also discloses a manufacturing method of the alternating current light-emitting device. The invention can reflect the light to the side surface by the plurality of grooves of the substrate, so as to solve the problem that the light irradiated to the substrate by the luminous layer can not be completely transmitted to the side surface of the light-emitting diode, thereby reducing the luminous efficiency of the light-emitting diode, improving the light extraction efficiency of the first light-emitting diode and the second light-emitting diode and improving the luminous efficiency of the alternating current light-emitting device.

Description

AC light-emitting device with increased light extraction efficiency and manufacturing method thereof

technical field

The invention relates to a light emitting device, in particular to an AC light emitting device with increased light extraction efficiency; the invention also relates to a manufacturing method of the AC light emitting device.

Background technique

With the rapid development of the optoelectronic industry, LED Light Emitting Diode (LED Light Emitting Diode), which is one of the light sources, has been widely used in various lighting or light source fields due to its power-saving characteristics, and the LED Light Emitting Diode is used in the optoelectronic field. occupies an important position. Because of this, manufacturers from all over the world have invested a lot of resources in the development of related technologies, and the 2005 Seoul Semiconductor and American III-N Technology's product launch conference further explained the development trend of AC LED products. Become the development trend of global light-emitting diode manufacturers.

From the technical development of AC LEDs to the present, the main technical development is to improve the electrical problems of AC LEDs. For example: AC light-emitting diodes cannot emit light (full-time light) when the AC positive and negative half-cycle signals are input, so a bridge-type AC light-emitting diode structure has been developed, which mainly uses Wheatstone Bridge (Wheatstone Bridge) ) rectification design concept to improve the phenomenon that only 1/2 of the total number of AC light-emitting diodes emit light at each moment when the AC positive and negative half-cycle signals are input, and can emit light all the time.

However, there is still room for development in terms of optical characteristics in the current AC LED structure, such as the improvement of the total reflection problem. After the light-emitting layer of the AC LED generates light, most of the light is transmitted in the AC LED structure, and the light in the AC LED structure needs to be refracted to be transmitted outside the AC LED structure; but The angle of light refraction is limited. When the incident angle of light exceeds the refraction angle range, the light will be totally reflected, so that part of the light is still in the AC LED structure, but cannot be transmitted out of the AC LED structure; so AC light emitting diodes cannot exert their original luminous efficacy.

In addition, when the light-emitting layer of the AC LED irradiates the substrate, part of the light travels in a straight line. As a result, part of the light can only be absorbed by the substrate or reflected back and forth between the substrate and the light-emitting layer, but the light cannot reach the back and forth of the AC LED. Side spread. In this way, the light energy absorbed by the substrate will be transformed into heat energy and dissipated, so that the luminous efficiency of the AC LED is reduced and overheating is caused.

To sum up the above, the main design of AC LEDs is the use of light sources, how to improve the luminous efficiency is a major issue, and AC LEDs are widely used in human families, so solving the above problems is actually the biggest issue.

Contents of the invention

The technical problem to be solved by the present invention is to provide an AC light-emitting device with increased light extraction efficiency, which can effectively increase the light extraction efficiency; therefore, the present invention also provides a manufacturing method of the AC light-emitting device.

In order to solve the above technical problems, one of the technical solutions adopted by the AC light-emitting device with increased light extraction efficiency of the present invention includes:

A substrate having a plurality of grooves;

a first light emitting diode, arranged on the plurality of grooves;

a second light emitting diode disposed on the plurality of grooves; and

A conductor, which is coupled to the first light emitting diode and the second light emitting diode, there is a separation space between the first light emitting diode and the second light emitting diode, the first light emitting diode and the second light emitting diode The two light emitting diodes can emit light according to an alternating current.

The manufacture method of above-mentioned AC light emitting device is:

providing a substrate and etching a plurality of grooves on the substrate;

forming a first light emitting diode and a second light emitting diode on the plurality of grooves respectively, with a separation space between the first light emitting diode and the second light emitting diode; and

A conductor is arranged on the separation space and connected to the first light-emitting diode and the second light-emitting diode.

The second technical solution adopted by the AC light-emitting device with increased light extraction efficiency of the present invention is to include:

A receiving substrate having a plurality of grooves, a first conductive layer, a second conductive layer and a third conductive layer;

A first light-emitting diode, disposed on the plurality of grooves, the first light-emitting diode includes a first electrode and a second electrode, and the second electrode is connected to the first conductive layer through a first bump , the first electrode is connected to the second conductive layer through a second bump; and

A second light emitting diode is arranged on the plurality of grooves, the second light emitting diode includes a third electrode and a fourth electrode, and the third electrode is connected to the third conductive layer through a third bump , the fourth electrode is connected to the second conductive layer through a second bump, there is a separation space between the first light emitting diode and the second light emitting diode, and the first light emitting diode and the first light emitting diode The two light emitting diodes emit light according to an alternating current through the first conductive layer, the second conductive layer and the third conductive layer.

The manufacture method of above-mentioned AC light emitting device is:

providing a receiving substrate and etching a plurality of grooves on the receiving substrate, and the receiving substrate has a first conductive layer, a second conductive layer and a third conductive layer;

A shared substrate is provided, a first light emitting diode and a second light emitting diode are respectively formed on the shared substrate corresponding to the plurality of grooves, and there is a separation space between the first light emitting diode and the second light emitting diode ;as well as

Flipping the shared substrate, using a first bump to connect the first light emitting diode to the first conductive layer, using a second bump to connect the first light emitting diode and the second light emitting diode to the a second conductive layer, using a third bump to connect the second light emitting diode to the third conductive layer; and

The shared substrate is separated from the first LED and the second LED.

Due to the adoption of the AC light-emitting device and its manufacturing method of the present invention, light can be reflected to the side by virtue of the plurality of grooves in the substrate, so as to solve the problem that the light emitted by the light-emitting layer to the substrate cannot completely propagate to the side of the light-emitting diode, reducing its luminescence. To solve the problem of efficiency, the light extraction efficiency of the first light-emitting diode and the second light-emitting diode is improved, thereby improving the luminous efficiency of the AC light-emitting device.

In addition, by using the AC light emitting device and its manufacturing method of the present invention, the scattering structure can also be used to increase the contact area of the electrodes on the basis of increasing the light extraction efficiency of the AC light emitting device.

Description of drawings

Below in conjunction with accompanying drawing and specific embodiment, the present invention will be described in further detail

Fig. 1 is a schematic structural view of Embodiment 1 of the present invention;

Fig. 2 is a schematic structural diagram of Embodiment 2 of the present invention;

Fig. 3 is a schematic structural view of Embodiment 3 of the present invention;

Fig. 4A is a schematic structural diagram of Embodiment 4 of the present invention;

Fig. 4B is a schematic structural diagram of Embodiment 5 of the present invention;

5A to 5D are circuit diagrams of embodiments of the AC light emitting device of the present invention.

6A to 6D are schematic structural views of an embodiment of a semiconductor epitaxial layer in the present invention;

7A to 7D are schematic structural views of another embodiment of the semiconductor epitaxial layer in the present invention;

8A to 8C are schematic diagrams of the manufacturing process of the embodiment shown in FIG. 1;

9A to 9D are schematic diagrams of the manufacturing process of the embodiment shown in FIG. 2;

Fig. 10 is a schematic structural diagram of Embodiment 5 of the present invention;

Fig. 11 is a schematic structural diagram of Embodiment 6 of the present invention;

Fig. 12 is a schematic structural diagram of Embodiment 7 of the present invention;

Fig. 13 is a schematic structural diagram of Embodiment 8 of the present invention;

Fig. 14 is a schematic structural diagram of Embodiment 9 of the present invention;

Fig. 15 is a schematic structural diagram of Embodiment 10 of the present invention;

16A and 16B are structural schematic diagrams of Embodiment 11 of the present invention;

17A to 17D are circuit diagrams of another embodiment of the AC light emitting device of the present invention;

18A to 18D are structural schematic diagrams of yet another embodiment of the semiconductor epitaxial layer in the present invention;

19A to 19D are structural schematic diagrams of another preferred embodiment of the semiconductor epitaxial layer in the present invention;

20A to 20E are schematic diagrams of the manufacturing process of the embodiment shown in FIG. 10;

21A to 21E are schematic diagrams of the manufacturing process of the embodiment shown in FIG. 11 .

Explanation of symbols in the figure:

10 is an AC light emitting device; 12 is a substrate; 122 is a groove;

124 is the separation space; 130 is the first conductive layer; 132 is the second conductive layer;

134 is the third conductive layer; 14 is the first light-emitting diode; 142 is the epitaxial stack layer;

144 is an N-type semiconductor layer; 146 is a light-emitting layer; 148 is a P-type semiconductor layer;

150 is the first electrode; 152 is the second electrode; 154 is the scattering structure;

16 is the second light emitting diode; 162 is the epitaxial stack layer; 164 is the N-type semiconductor layer;

166 is the light emitting layer; 168 is the P-type semiconductor layer; 170 is the first electrode;

172 is a second electrode; 174 is a scattering structure; 18 is a conductor;

20 is an insulating layer; 22 is an energy conversion layer; 222 is a scattering structure;

30 is a bridge rectifier circuit; 40 is a semiconductor epitaxy layer; 42 is an epitaxial stack layer;

422 is the second electrode; 44 is the N-type semiconductor layer; 442 is the first electrode;

46 is a light-emitting layer; 48 is a P-type semiconductor layer; 482 is a second electrode;

50 is a flip-chip AC light emitting device; 510 is the first bump;

512 is the second bump; 514 is the third bump; 52 is the receiving substrate;

522 is a groove; 54 is a first light emitting diode; 524 is a dielectric layer;

540 is a scattering structure; 542 is an epitaxial stack layer; 544 is an N-type semiconductor layer;

546 is a light-emitting layer; 548 is a P-type semiconductor layer; 550 is a first electrode;

552 is the second electrode; 554 is the transparent substrate; 556 is the scattering structure;

56 is the second light emitting diode; 560 is the scattering structure;

562 is an epitaxial stack layer; 564 is an N-type semiconductor layer; 566 is a light emitting layer;

568 is a P-type semiconductor layer; 570 is a first electrode; 572 is a second electrode;

574 is a transparent substrate; 576 is a scattering structure; 58 is a separation space;

60 is a scattering structure; 62 is an energy conversion layer; 64 is an energy conversion layer;

642 is a scattering structure; 96 is a shared substrate.

Detailed ways

Embodiment one. As shown in FIG. 1 , the AC light emitting device 10 of the present invention includes a substrate 12 , a first LED 14 and a second LED 16 . The substrate 12 has a plurality of grooves 122, and the plurality of grooves 122 may contain a plurality of photonic crystal structures, and the plurality of grooves 122 have the same spacing distance or different spacing distances, so that the light propagation path in the light emitting diode is changed, so that Improve luminous efficiency. The first LED 14 and the second LED 16 are disposed on the plurality of grooves 122 , and the first LED 14 and the second LED 16 are electrically connected through a conductor 18 . The first LED 14 and the second LED 16 are spaced apart, so there is a separation space 124 between the first LED 14 and the second LED 16 , so the conductor 18 is a wire. Wherein, the first electrode 150 of the first light emitting diode 14 is connected to the second electrode 172 of the second light emitting diode 16 through the conductor 18, so that the first light emitting diode 14 and the second light emitting diode 16 can The alternating current luminescence.

Furthermore, the first LED 14 and the second LED 16 include an epitaxial stacked layer 142, 162, an N-type semiconductor layer 144, 164, a light-emitting layer 146, 166, and a P-type semiconductor 148, 168. Epitaxial accumulation layers 142, 162 are disposed on the plurality of grooves 122, and the first light emitting diode 14 and the second light emitting diode 16 are epitaxial accumulation layers 142, 162, N-type semiconductor layer 144,164, light-emitting layer 146,166 and P-type semiconductor 148,168, and a first electrode 150,170 is set on the N-type semiconductor layer 144,164, and a second electrode 150,170 is set on the P-type semiconductor layer 148,168. Electrodes 152,172. Wherein, part of the epitaxial accumulation layers 142 , 162 are located in the plurality of grooves 122 , and the doping concentration of the epitaxial accumulation layers 142 , 162 is lower than that of the N-type semiconductor layers 144 , 164 .

In the present invention, the plurality of grooves 122 of the substrate 12 prevents the light irradiated by the light-emitting layers 146 and 166 on the substrate 12 from being directly absorbed by the substrate 12, and allows the light to be reflected by the substrate 12 and then go to the first light-emitting diode 14 and the first light-emitting diode 14. The side surface of the second light emitting diode 16 spreads to improve the light extraction efficiency of the first light emitting diode 14 and the second light emitting diode 16 .

Embodiment two. As shown in FIG. 2 , the difference between this embodiment and the embodiment shown in FIG. 1 is that this embodiment further includes an insulating layer 20 disposed on the substrate 12 and disposed on the first light emitting diode. 14 and the second light-emitting diode 16 in the separation space 124 to further insulate the electrical properties between the first light-emitting diode 14 and the second light-emitting diode 16 and avoid the first light-emitting diode 14 A short circuit or leakage occurs between the second light emitting diode 16 and the second light emitting diode 16 . Therefore, the conductor 18 is disposed on the insulating layer 20, and the conductor 18 is a conductive layer at this time.

Embodiment three. As shown in FIG. 3 , the difference between this embodiment and the embodiment shown in FIG. 2 is that a scattering structure 154 , 174 is arranged on the first LED 14 and the second LED 16 in this embodiment. , and the scattering structures 154, 174 are located on the P-type semiconductor layers 148, 168, so as to improve the light scattering effect and the contact area of the electrodes, thereby improving the luminous efficiency. Embodiment four. As shown in FIG. 4A, the difference between this embodiment of the present invention and the embodiment of FIG. 2 is that an energy conversion layer 22 is disposed on the P-type semiconductor layers 148 and 168 of the first light emitting diode 14 and the second light emitting diode 16, And the energy conversion layer 22 covers the first LED 14 and the second LED 16 . The illuminance of the AC light emitting device 10 is improved by the energy conversion layer 22 . In addition, as shown in FIG. 4B , a scattering structure 222 can be provided on the energy conversion layer 22 to improve the light scattering effect of the flip-chip AC light emitting device 10 , thereby improving the luminous efficiency.

Referring to FIG. 5A to FIG. 5D , they are circuit diagrams of an embodiment of the AC light emitting device 10 of the present invention. As shown in FIG. 5A , in this embodiment of the present invention, the AC light emitting device 10 includes a bridge rectifier circuit 30 coupled to the first LED 14 and the second LED 16 . The bridge rectifier circuit 30 includes a plurality of semiconductor epitaxial layers 40 (as shown in FIGS. 6A to 6C or as shown in FIGS. 7A to 7C ). As shown in FIG. 5B , the AC light emitting device 10 includes at least one parallel circuit, that is, the bridge rectifier circuit 30 shown in FIG. 5A and the first light emitting diode 14 coupled thereto are connected in parallel. with the second LED 16 . As shown in FIG. 5C, the AC light emitting device 10 includes at least one series circuit, and the series circuit is the bridge rectifier circuit 30 shown in FIG. 5A and the first light emitting diode 14 coupled thereto. with the second LED 16 . As shown in FIG. 5D , the AC light emitting device 10 includes at least one series-parallel circuit, and the series-parallel circuit is the series-parallel connection of the bridge rectifier circuit 30 shown in FIG. 5A and the first connected to it. The light emitting diode 14 and the second light emitting diode 16 .

6A to 6C are schematic structural views of an embodiment of the semiconductor epitaxial layer of the present invention. As shown in FIG. 6A, if the plurality of semiconductor epitaxial layers 40 are a plurality of third light-emitting diodes, they respectively include an epitaxial stacked layer 42, an N-type semiconductor layer 44, a light-emitting layer 46, and a P type semiconductor 48; wherein a first electrode 442 is disposed on the N-type semiconductor layer 44, and a second electrode 482 is disposed on the P-type semiconductor layer 48. As shown in FIG. 6B, if the plurality of semiconductor epitaxial layers 40 are a plurality of diodes, they respectively include an epitaxial stacked layer 42, an N-type semiconductor layer 44, and a P-type semiconductor 48 from bottom to top; wherein the N-type semiconductor A first electrode 442 is disposed on the layer 44 , and a second electrode 482 is disposed on the P-type semiconductor layer 48 . As shown in FIG. 6C, if the plurality of semiconductor epitaxial layers 40 is a plurality of diodes, they respectively include an epitaxial accumulation layer 42 and an N-type semiconductor layer 44 from bottom to top; wherein a first epitaxial accumulation layer 42 is provided. In the second electrode 422 , a first electrode 442 is disposed on the N-type semiconductor layer 44 . In addition, the present invention can further arrange an energy conversion layer 62 on the P-type semiconductor layer 48, as shown in FIG. 6D.

7A to 7C are schematic structural views of another embodiment of the semiconductor epitaxial layer of the present invention. As shown in FIG. 7A, the difference between this embodiment of the present invention and the embodiment of FIG. 6A is that a scattering structure 60 is arranged on the plurality of third light emitting diodes, and the scattering structure 60 is located on the P-type semiconductor layer 48 or on the N-type semiconductor layer 44 to improve the light scattering effect and the contact area of the electrodes, thereby improving the luminous efficiency. As shown in FIG. 7B, the difference between this embodiment of the present invention and the embodiment of FIG. 6B is that a scattering structure 60 is arranged on the plurality of diodes, and the scattering structure 60 is located in the P-type semiconductor layer 48 or the N-type semiconductor layer. layer 44 above. As shown in FIG. 7C, the difference between this embodiment of the present invention and the embodiment of FIG. 6C is that a scattering structure 60 is arranged on the plurality of diodes, and the scattering structure 60 is located on the N-type semiconductor layer 44 or the epitaxial stack layer 42 above. In addition, the present invention can further arrange an energy conversion layer 62 on the P-type semiconductor layer 48, as shown in FIG. 7D.

Referring to FIG. 8A to FIG. 8C , it is a manufacturing flowchart of a preferred embodiment of the present invention; as shown in the figures, and also refer to FIG. 1 . The steps of the manufacturing method of the AC light emitting device of the present invention include providing a substrate 12, and etching a plurality of grooves 122; respectively forming a first light emitting diode 14 and a second light emitting diode 16 on the plurality of grooves 122; setting a conductor 18 is between the first LED 14 and the second LED 16 , and the conductor 18 is coupled to the first LED 14 and the second LED 16 .

Refer to FIG. 9A to FIG. 9D , which are the manufacturing flow diagrams of another preferred embodiment of the present invention; as shown in the figures, and refer to FIG. 2 at the same time. This embodiment of the present invention differs from the embodiment shown in FIGS. 7A to 7C in that a conductor 18 is arranged between the first light emitting diode 14 and the second light emitting diode 16, and the conductor 18 is coupled to the first light emitting diode 16. Before the steps of the light emitting diode 14 and the second light emitting diode 16, a step is further included, which is to form an insulating layer 20 between the first light emitting diode 14 and the second light emitting diode 16, and the insulating layer 20 is located on the first light emitting diode 14 In the separation space 124 between the second LED 16 and the second LED 16 .

Embodiment five. As shown in FIG. 10 , the flip-chip AC light emitting device 50 with increased light extraction efficiency includes a receiving substrate 52 , a first LED 54 and a second LED 56 . The receiving substrate 52 has a plurality of grooves 522 and a first conductive layer 130 , a second conductive layer 132 and a third conductive layer 134 . The plurality of grooves 522 may further include a plurality of photonic crystal structures, and the plurality of grooves 522 further have the same spacing distance or different spacing distances, so that the light propagation path in the light emitting diode is changed to improve the luminous efficiency; and the first The conductive layer 130 , the second conductive layer 132 and the third conductive layer 134 are arranged separately. The first light emitting diode 54 and the second light emitting diode 56 are disposed on the plurality of grooves 522; the first light emitting diode 54 and the second light emitting diode 56 include a first electrode 550, a third electrode 570 and A second electrode 552 and a fourth electrode 572 . The second electrode 552 of the first LED 54 is connected to the first conductive layer 130 through a first bump 510 . The first electrode 550 of the first light-emitting diode 54 and the fourth electrode 572 of the second light-emitting diode 56 are connected to the second conductive layer 132 through a second bump 512 , and are connected to the second conductive layer 132 through the second bump. 512 electrically connects the first LED 54 and the second LED 56 . The third electrode 570 is connected to the third conductive layer 134 through a third bump 514 . Since the first light emitting diode 54 and the second light emitting diode 56 are spaced apart, there is a separation space 58 between the first light emitting diode 54 and the second light emitting diode 56 to separate the first light emitting diode. 54 and the second LED 56 to avoid short circuit or leakage between the first LED 54 and the second LED 56 . Wherein, the first light emitting diode 54 and the second light emitting diode 56 are electrically connected through the first conductive layer 130, a second conductive layer 132 and a third conductive layer 134 and are coupled to an AC power source (in the figure not shown), so that the first light emitting diode 54 and the second light emitting diode 56 can emit light according to the alternating current.

Furthermore, the first LED 54 and the second LED 56 include an epitaxial stacked layer 542, 562, an N-type semiconductor layer 544, 564, a light-emitting layer 546, 566, and a P-type semiconductor 548, 568. The first light-emitting diode 54 and the second light-emitting diode 56 are sequentially from top to bottom epitaxial stacked layers 542, 562, N-type semiconductor layers 544, 564, light-emitting layers 546, 566, and P-type semiconductor layers 548, 568. and the first electrodes 550, 570 are connected to the N-type semiconductor layers 544, 564, and the second electrodes 552, 572 are connected to the P-type semiconductors 548, 568; and the doping concentration of the epitaxial stacked layers 542, 562 is higher than that of the N-type The doping concentration of the semiconductor layers 544, 564 is low.

In the present invention, the plurality of grooves 522 of the receiving substrate 52 prevents the light irradiated by the light-emitting layers 546 and 566 on the receiving substrate 52 from being directly absorbed by the receiving substrate 52, and allows the light to be reflected by the receiving substrate 52 and then go to the first light-emitting diode. 54 and the side of the second light emitting diode 56 to improve the light extraction efficiency of the first light emitting diode 54 and the second light emitting diode 56 .

Embodiment six. As shown in FIG. 11 , this embodiment of the present invention differs from the embodiment of FIG. 10 in that it further includes an insulating layer 20 disposed between the first light emitting diode 54 and the second light emitting diode 56 In the separation space 58 between them, to further insulate the electrical property between the first light emitting diode 54 and the second light emitting diode 56, and avoid the gap between the first light emitting diode 54 and the second light emitting diode 56 A short circuit or leakage condition has occurred.

Embodiment seven. As shown in FIG. 12, the difference between this embodiment of the present invention and the embodiment of FIG. 11 is that it further includes a scattering structure 540, 560, which is located between the P-type semiconductor 548 of the first light emitting diode 54 and the second on the P-type semiconductor 568 of the light emitting diode 56 to improve the light extraction efficiency of the first light emitting diode 54 and the second light emitting diode 56 .

Embodiment eight. As shown in Figure 13, the difference between this embodiment of the present invention and the embodiment of 12 is that a transparent substrate 554, 574 is arranged on the first light emitting diode 54 and the second light emitting diode 56, and transparent Substrates 554 , 574 are on top of epitaxial buildup layers 542 , 562 . The transparent substrates 554, 574 are provided with a scattering structure 556, 576 to improve the light scattering effect of the flip-chip AC light emitting device 50, thereby improving the luminous efficiency.

Embodiment nine. As shown in FIG. 14 , the difference between this embodiment of the present invention and the embodiment of FIG. 13 is that a dielectric layer 524 is provided on the receiving substrate 52 to further insulate the first light emitting diode 54 from the first LED. The electrical properties between the two light emitting diodes 56, so as to avoid short circuit or leakage between the first light emitting diode 54 and the second light emitting diode 56.

Embodiment ten. As shown in FIG. 15, the difference between this embodiment of the present invention and the embodiment of FIG. 14 is that a reflective layer 526 is arranged on the receiving substrate 52, and is located between the receiving substrate 52 and the first LED 54 and the between the second light-emitting diodes 56; to prevent light from the light-emitting layers 546, 566 irradiating onto the receiving substrate 52 from being directly absorbed by the receiving substrate 52, and allow the light to be reflected by the receiving substrate 52 to the first light-emitting diode 54 and the receiving substrate 52. The front and side surfaces of the second light emitting diode 56 are transmitted to improve the light extraction efficiency of the first light emitting diode 54 and the second light emitting diode 56 .

Embodiment eleven. As shown in FIG. 16A , the difference between this embodiment of the present invention and the embodiment of FIG. 15 lies in that an energy conversion layer 64 is disposed on the transparent substrates 554 and 574 of the first LED 54 and the second LED 56 , and The energy conversion layer 64 covers the first LED 54 and the second LED 56 , and the illuminance of the flip chip AC light emitting device 50 is improved by the energy conversion layer 64 . In addition, as shown in FIG. 16B , a scattering structure 642 can be provided on the energy conversion layer 64 to improve the light scattering effect of the flip-chip AC light emitting device 50 , thereby improving the luminous efficiency. In addition, as shown in FIG. 17A , the flip-chip AC light emitting device 50 further includes a bridge rectifier circuit 30 coupled to the first LED 54 and the second LED 56 , and the bridge rectifier circuit 30 It includes a plurality of semiconductor epitaxial layers 40 . As shown in FIG. 17B, the flip-chip AC light emitting device 50 includes at least one parallel circuit, and the parallel circuit is to parallel connect the bridge rectifier circuit 30 shown in FIG. 17A and the first connected to it. LED 54 and the second LED 56 . As shown in FIG. 17C , the flip-chip AC light emitting device 50 includes at least one series circuit, and the series circuit is the bridge rectifier circuit 30 shown in FIG. 17A and the first connected circuit. LED 54 and the second LED 56 . As shown in FIG. 17D, the flip-chip AC light emitting device 50 includes at least one series-parallel circuit, and the series-parallel circuit is a series-parallel connection of the bridge rectifier circuit 30 shown in FIG. 17A and all the connected circuits. The first LED 54 and the second LED 56.

Referring to FIG. 18A, when the plurality of semiconductor epitaxial layers 40 are a plurality of third light emitting diodes, each of the semiconductor epitaxial layers 40 is disposed on the plurality of grooves 522 of the receiving substrate 52, and each of the semiconductor epitaxial layers 40 The layer 40 includes an epitaxial stacked layer 42 , an N-type semiconductor layer 44 , a light-emitting layer 46 and a P-type semiconductor 48 from bottom to top. A first electrode 442 is disposed on the N-type semiconductor layer 44 , and a second electrode 482 is disposed on the P-type semiconductor layer 48 . As shown in FIG. 18B, when the plurality of semiconductor epitaxial layers 40 are plural diodes, each of the semiconductor epitaxial layers 40 is disposed on the plurality of grooves 522 of the receiving substrate 52, and each of the semiconductor epitaxial layers 40 respectively includes an epitaxial stacked layer 42 , an N-type semiconductor layer 44 and a P-type semiconductor layer 48 from bottom to top. A first electrode 442 is disposed on the N-type semiconductor layer 44 , and a second electrode 482 is disposed on the P-type semiconductor layer 48 . As shown in FIG. 18C, when the plurality of semiconductor epitaxial layers 40 are plural diodes, each of the semiconductor epitaxial layers 40 is disposed on the plurality of grooves 522 of the receiving substrate 52, and each of the semiconductor epitaxial layers 40 respectively includes an epitaxial deposition layer 42 and an N-type semiconductor layer 44 from bottom to top. Wherein, a second electrode 422 is disposed on the epitaxial stacked layer 42 , and a first electrode 442 is disposed on the N-type semiconductor layer 44 . In addition, the present invention can further arrange an energy conversion layer 62 on the semiconductor epitaxial layer 40 , as shown in FIG. 18D .

As shown in FIG. 19A, the difference between this embodiment of the present invention and the embodiment of FIG. 18A is that a scattering structure 60 is arranged on the P-type semiconductor layer 48 or the N-type semiconductor layer 44 to improve the light scattering effect and The contact area of the electrodes is improved, thereby improving the luminous efficiency. As shown in FIG. 19B , the difference between this embodiment of the present invention and the embodiment of FIG. 18B is that a scattering structure 60 is disposed on the P-type semiconductor layer 48 or the N-type semiconductor layer 44 . As shown in FIG. 19C , the difference between this embodiment of the present invention and the embodiment of FIG. 18C is that a scattering structure 60 is disposed on the N-type semiconductor layer 44 or the epitaxial stacked layer 42 . In addition, the present invention can further arrange an energy conversion layer 62 on the semiconductor epitaxial layer 40 , as shown in FIG. 19D .

Refer to FIGS. 20A to 20E , which are the manufacturing flow diagrams of yet another preferred embodiment of the present invention, and please refer to FIG. 10 at the same time. The manufacturing method of the flip-chip AC light-emitting device of the present invention includes providing a receiving substrate 52, and etching a plurality of grooves 522; forming a first conductive layer 130, a second conductive layer 132 and a third conductive layer 134 on the receiving substrate On the substrate 52; a shared substrate 96 is provided, and a first light emitting diode 54 and a second light emitting diode 56 are epitaxially formed on the shared substrate 96 corresponding to the plurality of grooves 522; the shared substrate 96 is turned over to A first bump 510 electrically connects the first LED 54 to the first conductive layer 130, and a second bump 512 connects the first LED 54 to the second LED 56. Connecting to the second conductive layer 132, using a third bump 514 to connect the second LED 56 to the third conductive layer 134; and separating the first LED 54 and the third conductive layer 134 from the shared substrate 96 The second light emitting diode 56 .

Referring again to FIGS. 21A to 21E , which are also manufacturing flow charts of another preferred embodiment of the present invention; please also refer to FIG. 11 . The difference between this embodiment and the embodiment shown in FIG. 20A to FIG. 20E is that a first light emitting diode 54 and a second light emitting diode 56 are epitaxially formed on the same substrate 96 corresponding to the plurality of grooves 522. In the step, it further includes forming an insulating layer 20 between the first LED 54 and the second LED 56 , and the insulating layer 20 is located in the separation space 58 between the first LED 54 and the second LED 56 .

The present invention has been described in detail through the above examples, but these are not intended to limit the present invention. Without departing from the principle of the present invention, those skilled in the art can also make many modifications and improvements, which should also be regarded as the protection scope of the present invention.

Claims (60)

1. An AC lighting device with increased light extraction efficiency, characterized in that it comprises: A substrate having a plurality of grooves; a first light emitting diode, arranged on the plurality of grooves; a second light emitting diode disposed on the plurality of grooves; and A conductor, which is coupled to the first light emitting diode and the second light emitting diode, there is a separation space between the first light emitting diode and the second light emitting diode, the first light emitting diode and the second light emitting diode The two light emitting diodes can emit light according to an alternating current. 2. The AC lighting device according to claim 1, further comprising: An insulating layer is arranged between the first light-emitting diode and the second light-emitting diode, and is located in the separation space. 3. The AC light emitting device according to claim 1, wherein the first light emitting diode comprises: an epitaxial stack layer disposed on the plurality of grooves; an N-type semiconductor layer disposed on the epitaxial stack layer; a light-emitting layer disposed on the N-type semiconductor layer; A P-type semiconductor layer disposed on the light-emitting layer; a first electrode, disposed on the N-type semiconductor layer, the first electrode coupled to the conductor; and A second electrode is arranged on the P-type semiconductor layer. 4. The AC light emitting device according to claim 3, wherein the first light emitting diode comprises a scattering structure disposed on the P-type semiconductor layer. 5. The AC light emitting device according to claim 1, wherein the second light emitting diode comprises: an epitaxial stack layer disposed on the plurality of grooves; an N-type semiconductor layer disposed on the epitaxial stack layer; a light-emitting layer disposed on the N-type semiconductor layer; A P-type semiconductor layer disposed on the light-emitting layer; a first electrode disposed on the N-type semiconductor layer; and A second electrode is disposed on the P-type semiconductor layer, and the second electrode is coupled to the conductor. 6. The AC light emitting device according to claim 5, wherein the second light emitting diode comprises a scattering structure disposed on the P-type semiconductor layer. 7. The AC lighting device according to claim 1, further comprising: A bridge rectifier circuit coupled to the first LED and the second LED. 8. The AC light emitting device according to claim 7, wherein the bridge rectifier circuit comprises a plurality of semiconductor epitaxial layers. 9. The AC light-emitting device according to claim 8, characterized in that: the plurality of semiconductor epitaxial layers are a plurality of third light-emitting diodes, which respectively include: an epitaxial stack layer disposed on the plurality of grooves; an N-type semiconductor layer disposed on the epitaxial stack layer; a light-emitting layer disposed on the N-type semiconductor layer; A P-type semiconductor layer disposed on the light-emitting layer; a first electrode disposed on the N-type semiconductor layer; and A second electrode is arranged on the P-type semiconductor layer. 10 . The AC light emitting device according to claim 9 , wherein the third light emitting diode comprises a scattering structure disposed on the P-type semiconductor layer. 11 . 11. The AC light emitting device according to claim 8, characterized in that: the plurality of semiconductor epitaxial layers are a plurality of diodes, which respectively include: an epitaxial stack layer disposed on the plurality of grooves; an N-type semiconductor layer disposed on the epitaxial stack layer; A P-type semiconductor layer disposed on the N-type semiconductor layer; a first electrode disposed on the N-type semiconductor layer; and A second electrode is arranged on the P-type semiconductor layer. 12. The AC light emitting device according to claim 11, wherein the plurality of diodes comprise a scattering structure disposed on the P-type semiconductor layer. 13. The AC light emitting device according to claim 8, characterized in that: the plurality of semiconductor epitaxial layers are a plurality of diodes, which respectively include: an epitaxial stack layer disposed on the plurality of grooves; an N-type semiconductor layer disposed on the epitaxial stack layer; a first electrode disposed on the epitaxial stack; and A second electrode is arranged on the N-type semiconductor layer. 14. The AC light emitting device according to claim 13, wherein the plurality of diodes comprise a scattering structure disposed on the N-type semiconductor layer. 15. The AC light-emitting device according to claim 3, 5, 9, 11 or 13, wherein the doping concentration of the epitaxial stack layer is lower than that of the N-type semiconductor layer. 16. The AC light emitting device according to claim 3, 5, 9 or 11, further comprising an energy conversion layer disposed on the P-type semiconductor layer. 17. The AC light emitting device according to claim 16, further comprising a scattering structure disposed on the energy conversion layer. 18. The AC light emitting device according to claim 1, wherein the plurality of grooves comprise a plurality of photonic crystal structures. 19. The AC light emitting device as claimed in claim 1, wherein the plurality of grooves have the same distance apart. 20. The AC light emitting device as claimed in claim 1, wherein the plurality of grooves have different spacing distances. 21. The AC light emitting device according to claim 1, characterized in that: the AC light emitting device comprises at least one parallel circuit. 22. The AC light emitting device according to claim 1, wherein the AC light emitting device comprises at least one series circuit. 23. The AC light emitting device according to claim 1, wherein the AC light emitting device comprises at least one series-parallel circuit. 24. A method for manufacturing an AC light emitting device, comprising the following steps: providing a substrate and etching a plurality of grooves on the substrate; forming a first light emitting diode and a second light emitting diode on the plurality of grooves respectively, with a separation space between the first light emitting diode and the second light emitting diode; and A conductor is arranged on the separation space and connected to the first light-emitting diode and the second light-emitting diode. 25. The manufacturing method according to claim 24, wherein before the step of disposing a conductor on the separation space and connecting the first light-emitting diode and the second light-emitting diode, comprising forming an insulating layer Between the first light emitting diode and the second light emitting diode, and the insulating layer is located in the separation space. 26. An AC light-emitting device with increased light extraction efficiency, characterized in that: comprising, A receiving substrate having a plurality of grooves, a first conductive layer, a second conductive layer and a third conductive layer; A first light-emitting diode, disposed on the plurality of grooves, the first light-emitting diode includes a first electrode and a second electrode, and the second electrode is connected to the first conductive layer through a first bump , the first electrode is connected to the second conductive layer through a second bump; and A second light emitting diode is arranged on the plurality of grooves, the second light emitting diode includes a third electrode and a fourth electrode, and the third electrode is connected to the third conductive layer through a third bump , the fourth electrode is connected to the second conductive layer through a second bump, there is a separation space between the first light emitting diode and the second light emitting diode, and the first light emitting diode and the first light emitting diode The two light emitting diodes emit light according to an alternating current through the first conductive layer, the second conductive layer and the third conductive layer. 27. The AC light emitting device according to claim 26, further comprising: an insulating layer disposed between the first LED and the second LED and located in the separation space. 28. The AC light emitting device according to claim 26, wherein the first light emitting diode comprises: a P-type semiconductor layer disposed on the receiving substrate and connected to the second electrode; a light-emitting layer disposed on the N-type semiconductor layer; an N-type semiconductor layer disposed on the light-emitting layer and connected to the first electrode; and An epitaxial stack layer is arranged on the N-type semiconductor layer. 29. The AC light emitting device according to claim 28, wherein the first light emitting diode comprises a scattering structure disposed on the P-type semiconductor layer. 30. The AC light emitting device according to claim 28, wherein the first light emitting diode comprises a transparent substrate disposed on the epitaxial stack layer. 31. The AC light emitting device according to claim 30, wherein the first light emitting diode comprises a scattering structure disposed on the transparent substrate. 32. The AC light emitting device according to claim 26, wherein the second light emitting diode comprises, a P-type semiconductor layer disposed on the receiving substrate and connected to the fourth electrode; a light-emitting layer disposed on the N-type semiconductor layer; an N-type semiconductor layer disposed on the light-emitting layer and connected to the third electrode; and An epitaxial stack layer is arranged on the N-type semiconductor layer. 33. The AC light emitting device according to claim 32, wherein the second light emitting diode comprises a scattering structure disposed on the P-type semiconductor layer. 34. The AC light emitting device according to claim 32, wherein the second light emitting diode comprises a transparent substrate disposed on the epitaxial stack layer. 35. The AC light emitting device according to claim 34, wherein the second light emitting diode comprises a scattering structure disposed on the transparent substrate. 36. The AC light emitting device according to claim 30 or 34, further comprising an energy conversion layer disposed on the transparent substrate. 37. The AC lighting device as claimed in claim 26, further comprising a bridge rectifier circuit coupled to the first LED and the second LED. 38. The AC light emitting device according to claim 37, wherein the bridge rectifier circuit comprises a plurality of semiconductor epitaxial layers. 39. The AC light-emitting device according to claim 38, characterized in that: the plurality of semiconductor epitaxial layers are a plurality of third light-emitting diodes, which respectively include: an epitaxial stack layer disposed on the plurality of grooves; an N-type semiconductor layer disposed on the epitaxial stack layer; a light-emitting layer disposed on the N-type semiconductor layer; A P-type semiconductor layer disposed on the light-emitting layer; a first electrode disposed on the N-type semiconductor layer; and A second electrode is arranged on the P-type semiconductor layer. 40. The AC light emitting device according to claim 39, wherein the third light emitting diode comprises a scattering structure disposed on the P-type semiconductor layer. 41. The AC light emitting device according to claim 38, characterized in that: the plurality of semiconductor epitaxial layers are a plurality of diodes, which respectively include: an epitaxial stack layer disposed on the plurality of grooves; an N-type semiconductor layer disposed on the epitaxial stack layer; A P-type semiconductor layer disposed on the N-type semiconductor layer; a first electrode disposed on the N-type semiconductor layer; and A second electrode is arranged on the P-type semiconductor layer. 42. The AC light emitting device according to claim 41, wherein the plurality of diodes comprise a scattering structure disposed on the P-type semiconductor layer. 43. The AC light emitting device according to claim 38, characterized in that: the plurality of semiconductor epitaxial layers are a plurality of diodes, which respectively include: an epitaxial stack layer disposed on the plurality of grooves; an N-type semiconductor layer disposed on the epitaxial stack layer; a first electrode disposed on the epitaxial stack; and A second electrode is arranged on the N-type semiconductor layer. 44. The AC light emitting device according to claim 43, wherein the plurality of diodes comprise a scattering structure disposed on the N-type semiconductor layer. 45. The AC light-emitting device according to claim 28, 32, 39, 41 or 43, wherein the doping concentration of the epitaxial stack layer is lower than that of the N-type semiconductor layer. 46. The AC light emitting device according to claim 39 or 41, further comprising an energy conversion layer disposed on the P-type semiconductor layer. 47. The AC light emitting device as claimed in claim 26, wherein the plurality of grooves comprise a plurality of photonic crystal structures. 48. The AC light emitting device as claimed in claim 26, wherein the plurality of grooves have the same distance apart. 49. The AC light emitting device as claimed in claim 26, wherein the plurality of grooves have different spacing distances. 50. The AC light emitting device according to claim 26, wherein the AC light emitting device comprises at least one parallel circuit. 51. The AC lighting device according to claim 26, wherein the AC lighting device comprises at least one series circuit. 52. The AC light emitting device according to claim 26, wherein the AC light emitting device comprises at least one series-parallel circuit. 53. The AC light emitting device according to claim 26, further comprising a dielectric layer disposed on the plurality of grooves. 54. The AC light emitting device according to claim 53, wherein the dielectric layer at least comprises a plurality of combinations of more than one material and thickness. 55. The AC light emitting device according to claim 26, further comprising a reflective layer disposed between the receiving substrate and the first light emitting diode and the second light emitting diode. 56. The AC light emitting device according to claim 53, further comprising a reflective layer disposed between the receiving substrate and the dielectric layer. 57. A method for manufacturing an AC light emitting device, characterized in that it comprises the following steps, providing a receiving substrate and etching a plurality of grooves on the receiving substrate, and the receiving substrate has a first conductive layer, a second conductive layer and a third conductive layer; A shared substrate is provided, a first light emitting diode and a second light emitting diode are respectively formed on the shared substrate corresponding to the plurality of grooves, and there is a separation space between the first light emitting diode and the second light emitting diode ;as well as Flipping the shared substrate, using a first bump to connect the first light emitting diode to the first conductive layer, using a second bump to connect the first light emitting diode and the second light emitting diode to the a second conductive layer, using a third bump to connect the second light emitting diode to the third conductive layer; and The shared substrate is separated from the first LED and the second LED. 58. The manufacturing method according to claim 57, wherein the step of forming a first light-emitting diode and a second light-emitting diode on the shared substrate corresponding to the plurality of grooves includes the following steps: An insulating layer is formed between the first LED and the second LED, and the insulating layer is located in the separation space. 59. The manufacturing method according to claim 57, wherein the step of forming a first light-emitting diode and a second light-emitting diode on the shared substrate corresponding to the plurality of grooves includes the following steps: forming A dielectric layer is on the receiving substrate. 60. The manufacturing method according to claim 57, wherein the step of forming a first light-emitting diode and a second light-emitting diode on the shared substrate corresponding to the plurality of grooves includes the following steps: A reflective layer is formed between the receiving substrate and the dielectric layer.

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