CN101859595B - Latch device and latch method thereof - Google Patents
Latch device and latch method thereof Download PDFInfo
- Publication number
- CN101859595B CN101859595B CN2009101333843A CN200910133384A CN101859595B CN 101859595 B CN101859595 B CN 101859595B CN 2009101333843 A CN2009101333843 A CN 2009101333843A CN 200910133384 A CN200910133384 A CN 200910133384A CN 101859595 B CN101859595 B CN 101859595B
- Authority
- CN
- China
- Prior art keywords
- latch
- circuit
- latch signal
- power supply
- supply voltage
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000000034 method Methods 0.000 title claims abstract description 21
- 239000003990 capacitor Substances 0.000 claims abstract description 46
- 230000007423 decrease Effects 0.000 claims 2
- 230000000994 depressogenic effect Effects 0.000 claims 2
- 238000001914 filtration Methods 0.000 claims 2
- 230000000903 blocking effect Effects 0.000 claims 1
- 230000000881 depressing effect Effects 0.000 claims 1
- 230000003111 delayed effect Effects 0.000 abstract description 5
- 230000000630 rising effect Effects 0.000 description 14
- 238000010586 diagram Methods 0.000 description 5
- 230000000737 periodic effect Effects 0.000 description 3
- 238000001514 detection method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000005070 sampling Methods 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Images
Landscapes
- Logic Circuits (AREA)
- Semiconductor Integrated Circuits (AREA)
Abstract
Description
技术领域 technical field
本发明涉及一种在电源电压发生急剧变动的情况下锁存数据的锁存装置及锁存方法。The invention relates to a latch device and a latch method for latching data when a power supply voltage fluctuates sharply.
背景技术 Background technique
在电源布线因受到外部的负载的影响的情况下(例如电气干扰、负载的突变、其它电路的切换等),有时会在由该电源布线供电的电源电压中发生急剧的变动的情形。这种急剧变动的电源电压有可能会下降到在电路中发生复位的复位电压、接地电位、乃至电路的最低额定电位以下。其结果,常常会破坏系统的重要数据(例如寄存器值等)。When the power supply wiring is affected by an external load (for example, electrical noise, sudden change of load, switching of other circuits, etc.), the power supply voltage supplied by the power supply wiring may fluctuate rapidly. Such sudden fluctuations in the power supply voltage may drop below the reset voltage at which reset occurs in the circuit, the ground potential, or even the lowest rated potential of the circuit. As a result, important system data (such as register values, etc.) are often destroyed.
为了防止集成电路(以下称为“IC”)工作所需的IC上的数据被破坏,常常设置针对电源电压的急剧变动的后备电路。通过设置后备电路,就能自动地恢复数据。例如,作为在芯片外解决对策使用后备电源用电池,作为芯片内解决对策使用检测电源电压的下降的比较器和后备电源用电容器。In order to prevent data on the IC necessary for the operation of an integrated circuit (hereinafter referred to as "IC") from being destroyed, a backup circuit against sudden fluctuations in power supply voltage is often provided. By setting up a backup circuit, data can be automatically restored. For example, a backup power supply battery is used as an off-chip solution, and a comparator for detecting a drop in power supply voltage and a backup power supply capacitor are used as an on-chip solution.
此外,通过在切断电源的供给时,通过传输电路使第1锁存电路的存储数据保存在第2锁存电路中,就能防止IC上的数据被破坏(例如,参照专利文献1)。In addition, when the power supply is cut off, the data stored in the first latch circuit is held in the second latch circuit through the transfer circuit, thereby preventing data on the IC from being destroyed (for example, refer to Patent Document 1).
专利文献1:日本特开2008-78754号公报Patent Document 1: Japanese Patent Laid-Open No. 2008-78754
但是,在上述现有技术中,在IC中的数据锁存的时刻和电源电压的急剧变动的时刻一致的情况下,即使有后备电路,也有可能不能正确地进行数据的锁存。因此,锁存结果会不稳定。However, in the prior art described above, when the timing of data latching in the IC coincides with the timing of a sudden change in power supply voltage, data may not be latched accurately even if there is a backup circuit. Therefore, the latch result will be unstable.
发明内容 Contents of the invention
因此,本发明的目的在于,提供一种即使锁存器和电源电压同时发生急剧的变动,也能使锁存结果稳定的锁存装置及锁存方法。Therefore, an object of the present invention is to provide a latch device and a latch method capable of stabilizing a latch result even if a latch and a power supply voltage fluctuate rapidly at the same time.
为了实现上述目的,本发明相关的锁存装置,包括:In order to achieve the above object, the latch device related to the present invention includes:
与电源布线连接的整流元件;Rectifier elements connected to power wiring;
与所述整流元件的正向侧连接的电容器;a capacitor connected to the positive side of the rectifying element;
第一锁存电路,其在所述电容器的电容器电压下工作、并根据第一锁存信号锁存输入数据;a first latch circuit operating at a capacitor voltage of the capacitor and latching input data according to a first latch signal;
输出第三锁存信号的滤波电路,其使比所述第一锁存信号延迟的第二锁存信号通过低通滤波器来产生该第三锁存信号;a filter circuit that outputs a third latch signal, which passes a second latch signal delayed from the first latch signal through a low-pass filter to generate the third latch signal;
无效化电路,其通过检测所述电源布线的电源电压的下降来使所述第二锁存信号无效;以及an invalidation circuit that invalidates the second latch signal by detecting a drop in a power supply voltage of the power supply wiring; and
第二锁存电路,其在所述电容器电压下工作,并根据所述第三锁存信号锁存所述第一锁存电路的输出数据。a second latch circuit that operates at the capacitor voltage and latches the output data of the first latch circuit according to the third latch signal.
此外,为了实现上述目的,本发明相关的锁存方法,包括:In addition, in order to achieve the above object, the latching method related to the present invention includes:
第一步骤,通过将第一锁存信号输入到第一锁存电路来锁存输入数据,其中,该第一锁存电路在电容器电压下工作,该电容器被连接到与电源布线连接的整流元件的正向侧;In a first step, input data is latched by inputting a first latch signal to a first latch circuit operating at a voltage of a capacitor connected to a rectifying element connected to a power supply wiring positive side of
第二步骤,使比所述第一锁存信号延迟的第二锁存信号通过低通滤波器来产生第三锁存信号;In a second step, passing a second latch signal delayed from the first latch signal through a low-pass filter to generate a third latch signal;
第三步骤,通过检测所述电源布线的电源电压的下降来使所述第二锁存信号无效;以及a third step of deactivating the second latch signal by detecting a drop in a power supply voltage of the power supply wiring; and
第四步骤,使所述第三锁存信号输入到在所述电容器电压下工作的第二锁存电路来锁存所述第一锁存电路的输出数据。The fourth step is to input the third latch signal to the second latch circuit operating at the capacitor voltage to latch the output data of the first latch circuit.
发明效果Invention effect
根据本发明,即使锁存和电源电压的急剧变动同时发生,也能防止发生锁存结果不稳定的情形。According to the present invention, even if latching and a sudden fluctuation of the power supply voltage occur at the same time, it is possible to prevent the latching result from being unstable.
附图说明 Description of drawings
图1是作为本发明相关的锁存装置的实施方式的电源电压变动对策电路100的结构图。FIG. 1 is a configuration diagram of a power supply voltage fluctuation countermeasure circuit 100 as an embodiment of a latch device according to the present invention.
图2是关于DIN、WR1、WR2、DOUT的时序图。Figure 2 is a timing diagram about DIN, WR1, WR2, and DOUT.
图3是滤波电路F1的具体例。FIG. 3 is a specific example of the filter circuit F1.
图4是可预置为1或0的数据保持寄存器的结构图。Figure 4 is a structural diagram of a data holding register that can be preset to 1 or 0.
图5是本发明的实施例。Fig. 5 is an embodiment of the present invention.
图6是表示电源电压变动对策电路100的通常状态中的锁存方法的时序图。FIG. 6 is a timing chart showing a latch method in a normal state of the power supply voltage fluctuation countermeasure circuit 100 .
图7是表示电源电压变动对策电路100的、在锁存信号WR1的上升沿发生电源电压的急剧变动时的锁存方法的时序图。FIG. 7 is a timing chart showing a latch method of the power supply voltage fluctuation countermeasure circuit 100 when a sudden fluctuation of the power supply voltage occurs at the rising edge of the latch signal WR1 .
图8是表示电源电压变动对策电路100的、在从锁存信号WR1的上升沿到锁存信号WR2的上升沿的期间中发生电源电压的急剧变动时的锁存方法的时序图。FIG. 8 is a timing chart showing a latch method when a sudden change in the power supply voltage occurs between the rising edge of the latch signal WR1 and the rising edge of the latch signal WR2 in the power supply voltage fluctuation countermeasure circuit 100 .
图9是表示电源电压变动对策电路100的、在从锁存信号WR2的上升沿到锁存信号WR1的上升沿的期间中发生电源电压的急剧变动时的锁存方法的时序图。FIG. 9 is a timing chart showing a latch method when a sudden change in the power supply voltage occurs between the rising edge of the latch signal WR2 and the rising edge of the latch signal WR1 in the power supply voltage fluctuation countermeasure circuit 100 .
图10是表示电源电压变动对策电路100的、在锁存信号WR2的上升沿发生电源电压的急剧变动时、电源电压比锁存信号WR2的上升时刻先下降的时候的锁存方法的时序图。10 is a timing chart showing a latch method in power supply voltage fluctuation countermeasure circuit 100 when the power supply voltage suddenly fluctuates at the rising edge of latch signal WR2 and the power supply voltage falls before the rising timing of latch signal WR2.
图11是表示电源电压变动对策电路100的、在锁存信号WR2的上升沿发生电源电压的急剧变动时电源电压比锁存信号WR2的上升时刻晚下降的时候的锁存方法的时序图。11 is a timing chart showing a latch method when the power supply voltage falls later than the rising timing of the latch signal WR2 when the power supply voltage suddenly fluctuates at the rising edge of the latch signal WR2 in the power supply voltage fluctuation countermeasure circuit 100 .
图12是将图1的晶体管QD替换为N通道型晶体管时的后备电源电路。FIG. 12 is a backup power supply circuit in which the transistor QD in FIG. 1 is replaced with an N-channel transistor.
图13是将图1的晶体管QD替换为二极管时的后备电源电路。FIG. 13 is a backup power supply circuit in which the transistor QD in FIG. 1 is replaced with a diode.
图14是将图1的电阻R1替换为P通道型晶体管时的后备电源电路。FIG. 14 is a backup power supply circuit when the resistor R1 in FIG. 1 is replaced by a P-channel transistor.
图15是将图1的电阻R1替换为N通道型晶体管时的后备电源电路。FIG. 15 is a backup power supply circuit in which the resistor R1 in FIG. 1 is replaced by an N-channel transistor.
图中符号说明:Explanation of symbols in the figure:
QD、Q1~Q6 晶体管QD, Q1~Q6 Transistors
D1 锁存电路D1 latch circuit
C1 电容器C1 capacitor
R1、R2 电阻元件R1, R2 Resistive elements
N1 AND电路N1 AND circuit
F1 滤波电路F1 filter circuit
I1、I2 反向电路I1, I2 reverse circuit
具体实施方式 Detailed ways
下面,说明作为本发明相关的锁存装置的实施方式的电源电压变动对策电路的结构及其功能。电源电压变动对策电路是用于在电源电压的急剧变动中保护在电路中保持的数据的电路,被形成在IC芯片上。即便在锁存时刻中产生电源电压的急剧变动(例如,变动时间:几μ秒~几十μ秒、电压下降量:电路的复位电压以下或接地电压以下),电源电压变动对策电路也会保护在电路中保持的数据。Next, the structure and function of the power supply voltage variation countermeasure circuit as an embodiment of the latch device according to the present invention will be described. The power supply voltage fluctuation countermeasure circuit is a circuit for protecting data held in the circuit from sudden fluctuations in the power supply voltage, and is formed on an IC chip. Even if a sudden change in the power supply voltage occurs during the latch timing (e.g., change time: several μseconds to tens of μseconds, amount of voltage drop: below the reset voltage of the circuit or below the ground voltage), the power supply voltage fluctuation countermeasure circuit will protect data held in the circuit.
图1是作为本发明相关的锁存装置的实施方式的电源电压变动对策电路100的结构图。电源电压变动对策电路100,作为主要的结构包括:晶体管QD、电容器C1、锁存电路D1、滤波电路F1、AND电路N1、和锁存电路D2。此外,电源电压变动对策电路100还包括电阻元件R1。FIG. 1 is a configuration diagram of a power supply voltage fluctuation countermeasure circuit 100 as an embodiment of a latch device according to the present invention. The power supply voltage variation countermeasure circuit 100 includes, as main components, a transistor QD, a capacitor C1, a latch circuit D1, a filter circuit F1, an AND circuit N1, and a latch circuit D2. In addition, the power supply voltage fluctuation countermeasure circuit 100 further includes a resistance element R1.
由Q1、C1、R1构成的电路产生针对电源电压变动对策电路整体的后备电源电压VDD2。D1和D2分别是第1锁存电路和第2锁存电路。WR1是针对锁存电路D1的第1锁存信号,WR2是针对锁存电路D2的第2锁存信号。DIN是输入数据,DOUT是输出数据。N1是检测电源电压VDD的下降的AND电路。F1是除去锁存信号WR2E的噪声和电源电压的急剧变动对锁存电路D2的影响的低通滤波器。A circuit composed of Q1, C1, and R1 generates a backup power supply voltage VDD2 for the entire power supply voltage fluctuation countermeasure circuit. D1 and D2 are a first latch circuit and a second latch circuit, respectively. WR1 is a first latch signal for the latch circuit D1, and WR2 is a second latch signal for the latch circuit D2. DIN is the input data and DOUT is the output data. N1 is an AND circuit that detects a drop in the power supply voltage VDD. F1 is a low-pass filter for removing the influence of the noise of the latch signal WR2E and the sudden fluctuation of the power supply voltage on the latch circuit D2.
进一步详细地说明电源电压变动对策电路100的各结构。Each configuration of the power supply voltage fluctuation countermeasure circuit 100 will be described in more detail.
晶体管QD是与用于提供电源电压VDD的电源布线连接的整流元件。图1所示的晶体管QD是P通道型晶体管。作为具体例,可例举P通道MOSFET。晶体管QD的栅极和漏极与电源电压VDD连接,晶体管QD的源极连接到电容器C1。如此设置在电源布线和电容器之间的晶体管QD作为以从电源电压VDD侧向电容器C1侧的方向为正向的整流元件起作用。在电源电压VDD比电容器C1的电容器电压VDD2(即,后备电源电压VDD2)高的情况下,由于电流正向流动而使得电容器C1被充电。相反,在电源电压VDD比电容器电压VDD2低的情况下,晶体管QD切断电流从电容器C1侧向电源电压VDD侧的方向的流动。就是说,晶体管QD通常向电容器C1提供电压,在电源电压下降的情况下,使电容器C1从电源电压的下降中分离。Transistor QD is a rectifying element connected to a power supply wiring for supplying a power supply voltage VDD. The transistor QD shown in FIG. 1 is a P-channel type transistor. As a specific example, a P-channel MOSFET may be mentioned. The gate and drain of the transistor QD are connected to the power supply voltage VDD, and the source of the transistor QD is connected to the capacitor C1. The transistor QD thus provided between the power supply wiring and the capacitor functions as a rectifying element whose direction is forward from the power supply voltage VDD side to the capacitor C1 side. In the case where the power supply voltage VDD is higher than the capacitor voltage VDD2 of the capacitor C1 (ie, the backup power supply voltage VDD2 ), the capacitor C1 is charged due to the forward flow of current. Conversely, when the power supply voltage VDD is lower than the capacitor voltage VDD2 , the transistor QD blocks the flow of current from the capacitor C1 side to the power supply voltage VDD side. That is, transistor QD normally supplies a voltage to capacitor C1 , decoupling capacitor C1 from a drop in supply voltage in the event of a drop in supply voltage.
再有,既可以如图12所示,将图1所示的晶体管QD替换为N通道型晶体管,也可以如图13所示,替换为二极管。根据图示这种连接,任一个元件均能作为整流元件发挥作用。Furthermore, as shown in FIG. 12 , the transistor QD shown in FIG. 1 may be replaced by an N-channel transistor, or may be replaced by a diode as shown in FIG. 13 . According to the connection shown in the figure, any element can function as a rectifying element.
电容器C1是与晶体管QD的正向侧连接的芯片内电容器,作为电源电压变动对策电路100的电源使用。电容器C1的容量可以为几十pF。The capacitor C1 is an on-chip capacitor connected to the positive side of the transistor QD, and is used as a power supply of the power supply voltage fluctuation countermeasure circuit 100 . Capacitor C1 can have a capacity of tens of pF.
锁存电路D1根据周期的锁存信号WR1保持来自数字单元的输入数据DIN。锁存电路D2按照基于锁存信号WR2产生的锁存信号WRE2保持从锁存电路D1输出的输出数据D1OUT,该锁存信号WR2的相位相对于锁存信号WR1被延迟。锁存信号WR1、WR2是具有周期脉冲的脉冲信号。而且,从锁存电路D2输出的输出数据D2OUT作为电源电压变动对策电路100的输出值DOUT被输出。The latch circuit D1 holds the input data DIN from the digital unit according to the periodic latch signal WR1. The latch circuit D2 holds the output data D1OUT output from the latch circuit D1 according to a latch signal WRE2 generated based on a latch signal WR2 whose phase is delayed with respect to the latch signal WR1. The latch signals WR1 and WR2 are pulse signals having periodic pulses. Furthermore, the output data D2OUT output from the latch circuit D2 is output as the output value DOUT of the power supply voltage fluctuation countermeasure circuit 100 .
图2是有关DIN、WR1、WR2、DOUT的时序图。锁存信号WR2相对于锁存信号WR1具有相位延迟Td。Fig. 2 is the sequence chart about DIN, WR1, WR2, DOUT. The latch signal WR2 has a phase delay Td with respect to the latch signal WR1.
在图1中,AND电路N1作为检测电源电压VDD的下降的检测电路起作用,同时还作为使锁存信号WR2无效的无效电路起作用。AND电路N1在检测电源电压VDD的下降的期间使锁存信号WR2无效。即,AND电路N1,在电源电压VDD是规定值以下的期间使锁存信号WR2无效。从AND电路N1输出的电平信号WR2D,在锁存信号WR2无效的期间无论锁存信号WR2的输入如何,都被固定为L电平。AND电路N1在未检测出电源电压VDD的下降的情况下(锁存信号WR2没有被无效的情况下),保持不变地直接输出锁存信号WR2(即电平信号WR2D等于锁存信号WR2)。In FIG. 1 , AND circuit N1 functions as a detection circuit for detecting a drop in power supply voltage VDD, and also functions as an invalidation circuit for invalidating latch signal WR2 . The AND circuit N1 disables the latch signal WR2 while detecting a drop in the power supply voltage VDD. That is, AND circuit N1 disables latch signal WR2 while power supply voltage VDD is equal to or less than a predetermined value. The level signal WR2D output from the AND circuit N1 is fixed at the L level while the latch signal WR2 is inactive regardless of the input of the latch signal WR2 . When the AND circuit N1 does not detect a drop in the power supply voltage VDD (when the latch signal WR2 is not invalidated), it directly outputs the latch signal WR2 unchanged (that is, the level signal WR2D is equal to the latch signal WR2) .
滤波电路F1通过用低通滤波器对经过AND电路N1的锁存信号WR2进行处理,输出所产生的锁存信号WR2E(第3锁存信号)。为了规避噪声和电源电压VDD的急剧变动对锁存信号WR2的影响而使用此低通滤波器。The filter circuit F1 processes the latch signal WR2 passed through the AND circuit N1 with a low-pass filter, and outputs the generated latch signal WR2E (third latch signal). This low-pass filter is used to avoid the influence of noise and sudden fluctuations in the power supply voltage VDD on the latch signal WR2.
图3是滤波电路F1的具体例。滤波电路F1包括:作为低通滤波器的CR滤波器(由电阻元件R2和芯片内电容器C2构成的电路),使CR滤波器的输出反向的反向电路I1,和使反向电路I1的输出反向的反向电路I2。滤波电路F1输出反向电路I2的输出作为锁存信号WR2E。FIG. 3 is a specific example of the filter circuit F1. The filter circuit F1 includes: a CR filter (a circuit composed of a resistive element R2 and an on-chip capacitor C2) as a low-pass filter, an inverting circuit I1 for inverting the output of the CR filter, and an inverting circuit I1 for inverting the output of the inverting circuit I1. The inverting circuit I2 that outputs the reverse. The filter circuit F1 outputs the output of the inverting circuit I2 as a latch signal WR2E.
在图1中,电阻元件R1是用于决定因电源电压VDD的下降而根据电容器C1的电源电压进行工作的电源电压变动对策电路100的可工作时间的放电元件。连接到晶体管QD的正向侧的电阻元件R1,与电容器C1并联连接。电容器C1的电荷通过电阻元件R1放电。通过增大电阻元件R1的电阻值和电容器C1的容量中至少任何一个,就能延长电源电压变动对策电路100的可工作时间。例如,在希望通常电源电压VDD的功率下降后尽可能长时间地保持数据的情况下,可以按照保持数据的时间,决定电阻元件R1的电阻值和电容器C1的容量。例如,可以将几微秒至几十微秒的期间的电源电压的下降看作急剧变动,几百微秒以上的电源电压的下降看作通常的电源电压的功率下降引起的下降即可。In FIG. 1 , the resistance element R1 is a discharge element for determining the operable time of the power supply voltage variation countermeasure circuit 100 that operates according to the power supply voltage of the capacitor C1 due to the drop of the power supply voltage VDD. The resistance element R1 connected to the positive side of the transistor QD is connected in parallel with the capacitor C1. The charge of the capacitor C1 is discharged through the resistive element R1. By increasing at least one of the resistance value of the resistance element R1 and the capacity of the capacitor C1, the operable time of the power supply voltage fluctuation countermeasure circuit 100 can be extended. For example, when it is desired to hold data for as long as possible after the normal power supply voltage VDD drops, the resistance value of the resistive element R1 and the capacity of the capacitor C1 can be determined according to the time to hold data. For example, a drop in the power supply voltage for a period of several microseconds to several tens of microseconds can be regarded as a sudden change, and a drop in the power supply voltage of more than a few hundred microseconds can be regarded as a drop caused by a normal power supply voltage drop.
再有,既可以如图14所示,将图1所示的电阻元件R1替换为P通道型晶体管,也可以如图15所示,替换为N通道型晶体管。通过图示的这种连接,任何的元件都利用源极-漏极间的二极管作为放电元件起作用。此外,使用晶体管作为放电元件的情形与电阻元件的情形相比,能减少布图面积。Furthermore, as shown in FIG. 14, the resistance element R1 shown in FIG. 1 may be replaced with a P-channel transistor, or as shown in FIG. 15, it may be replaced with an N-channel transistor. With the connection shown in the figure, any element functions as a discharge element using the diode between the source and the drain. In addition, the layout area can be reduced in the case of using a transistor as a discharge element compared with the case of a resistance element.
图6是表示电源电压变动对策电路100的通常状态下的锁存方法的时序图。在通常工作状态(即电源电压VDD正常状态)下,后备电源电压VDD2等于从电源电压VDD中减去由Q1引起的损失部分后的电压。锁存电路D1接收周期的锁存信号WR1,把输出数据D1OUT输出给锁存电路D2。锁存电路D2接收基于锁存信号WR2的周期的锁存信号WR2E,在锁存信号WR2E的锁存时刻,输出已锁存的数据D1OUT作为输出数据D2OUT(DOUT)。在通常工作状态下,由于没有检测出电源电压VDD的下降,所以AND电路N1仍旧输出锁存信号WR2作为输出数据WR2D。此外,锁存信号WR2E的脉冲宽度,由于经过滤波电路F1,所以比锁存信号WR1的脉冲宽度要长。FIG. 6 is a timing chart showing a latch method in a normal state of the power supply voltage fluctuation countermeasure circuit 100 . In a normal working state (that is, a normal state of the power supply voltage VDD), the backup power supply voltage VDD2 is equal to the voltage obtained by subtracting the loss caused by Q1 from the power supply voltage VDD. The latch circuit D1 receives the periodic latch signal WR1, and outputs the output data D1OUT to the latch circuit D2. The latch circuit D2 receives the latch signal WR2E based on the period of the latch signal WR2, and outputs the latched data D1OUT as output data D2OUT (DOUT) at the timing of latching the latch signal WR2E. In the normal working state, since the drop of the power supply voltage VDD is not detected, the AND circuit N1 still outputs the latch signal WR2 as the output data WR2D. In addition, the pulse width of the latch signal WR2E is longer than the pulse width of the latch signal WR1 because it passes through the filter circuit F1.
在产生电源电压的急剧变动的情况下,电源电压VDD以接地电位为基准,常常下降到0V或复位电压。此情况下,晶体管QD截止,后备电源VDD2与电源电压VDD分离。其结果,电容器C1的电荷不会向电源电压VDD侧泄漏。与电源电压VDD分离的电容器C1作为电源电压变动对策电路100的电源工作。When a sudden change in the power supply voltage occurs, the power supply voltage VDD often drops to 0 V or a reset voltage with reference to the ground potential. In this case, the transistor QD is turned off, and the backup power supply VDD2 is separated from the power supply voltage VDD. As a result, the charge of the capacitor C1 does not leak to the power supply voltage VDD side. The capacitor C1 separated from the power supply voltage VDD operates as a power supply of the power supply voltage fluctuation countermeasure circuit 100 .
电源电压的急剧变动的产生的时刻对于锁存信号的状态可分为4类。The timing at which a sudden change in the power supply voltage occurs can be classified into four types with respect to the state of the latch signal.
(1)与锁存电路D1的锁存信号WR1的上升沿同时地产生电源电压VDD的急剧变动(参照图7)(1) A sudden change in the power supply voltage VDD occurs simultaneously with the rising edge of the latch signal WR1 of the latch circuit D1 (see FIG. 7 )
(2)在从锁存电路D1的锁存信号WR1的上升后到锁存电路D2的锁存信号WR2的上升为止的期间中,产生电源电压VDD的急剧变动(参照图8)(2) During the period from the rise of the latch signal WR1 of the latch circuit D1 to the rise of the latch signal WR2 of the latch circuit D2, a sudden change in the power supply voltage VDD occurs (see FIG. 8 ).
(3)与锁存电路D2的锁存信号WR2的上升沿同时地产生电源电压VDD的急剧变动(参照图10、11)(3) A sudden change in the power supply voltage VDD occurs simultaneously with the rising edge of the latch signal WR2 of the latch circuit D2 (see FIGS. 10 and 11 )
(4)在从锁存电路D2的锁存信号WR2的上升后到锁存电路D1的锁存信号WR1的上升为止的期间中,产生电源电压VDD的急剧变动(参照图9)(4) During the period from the rise of the latch signal WR2 of the latch circuit D2 to the rise of the latch signal WR1 of the latch circuit D1, a sudden change in the power supply voltage VDD occurs (see FIG. 9 ).
下面,说明(1)~(4)各个的时刻发生电源电压VDD变动时的电源电压变动对策电路100的工作。Next, the operation of the power supply voltage variation countermeasure circuit 100 when the power supply voltage VDD fluctuates at each of the timings (1) to (4) will be described.
(1)的情形(图7的情形)下,锁存电路D1的数据,因输入数据DIN同时变化而不能确定。因此,不能保证锁存电路D1的数据。但是,此情况下,锁存电路D2的锁存信号WR2(WR2E)由于被AND电路N1无效,所以在电源电压VDD的急剧变动以后不会再产生。因此,在锁存电路D2中稳定保持电源电压VDD的急剧变动时刻之前的数据。In the case of (1) (the case of FIG. 7 ), the data of the latch circuit D1 cannot be determined because the input data DIN changes simultaneously. Therefore, the data of the latch circuit D1 cannot be guaranteed. However, in this case, since the latch signal WR2 (WR2E) of the latch circuit D2 is negated by the AND circuit N1, it does not regenerate after a sudden change in the power supply voltage VDD. Therefore, the data before the sudden fluctuation of the power supply voltage VDD is held stably in the latch circuit D2.
(2)的情形(图8的情形)下,由于锁存电路D2的锁存信号WR2(WRE2)被AND电路N1无效,所以在电源电压VDD的急剧变动以后就不会再产生。因此,在锁存电路D2中稳定保持由前次接收的锁存信号WRE2锁存的数据。In the case of (2) (the case of FIG. 8 ), since the latch signal WR2 (WRE2) of the latch circuit D2 is negated by the AND circuit N1, it does not occur after a sudden change in the power supply voltage VDD. Therefore, the data latched by the latch signal WRE2 received last time is held stably in the latch circuit D2.
(3)的情形(图10、11的情形)下,锁存电路D1的数据处于正常。In the case of (3) (the cases of FIGS. 10 and 11 ), the data of the latch circuit D1 is normal.
如图10所示,如果因芯片内的延迟,电源电压VDD在锁存信号WR2的上升时刻之前先下降的话,则利用AND电路N1使锁存信号WR2无效。由此不会产生锁存信号WR2E。因此,在锁存电路D2中稳定保持由前次接收的锁存信号WRE2锁存的数据。As shown in FIG. 10 , if the power supply voltage VDD falls before the rising timing of the latch signal WR2 due to delay in the chip, the AND circuit N1 invalidates the latch signal WR2 . Therefore, the latch signal WR2E is not generated. Therefore, the data latched by the latch signal WRE2 received last time is held stably in the latch circuit D2.
另一方面,如图11所示,如果电源电压VDD迟于锁存信号WR2的上升时刻而下降的话,则直到检测出电源电压VDD的下降为止,AND电路N1都直接使锁存信号WR2通过。滤波电路F1通常抑制或去除几百纳秒以下的短脉冲。On the other hand, as shown in FIG. 11, if the power supply voltage VDD falls later than the rising timing of the latch signal WR2, the AND circuit N1 directly passes the latch signal WR2 until the power supply voltage VDD fall is detected. The filter circuit F1 typically suppresses or removes short pulses below a few hundred nanoseconds.
因此,通过AND电路N1的锁存信号WR2的脉冲宽度如果是可由滤波电路F1去除的长度的话,则不产生锁存信号WR2E。由此,在锁存电路D2中稳定地保持由前次接收的锁存信号WRE2锁存的数据。另一方面,如果通过AND电路N1的锁存信号WR2的脉冲宽度是不能被滤波电路F1去除的长度的话,则此锁存信号WR2被看作有效信号,作为锁存信号WR2E由锁存电路D2接收。其结果,从锁存电路D1输出的输出数据D1OUT被传输到锁存电路D2。即,锁存电路D2,在被看作有效的信号的锁存信号WR2E的边沿,能稳定锁存输出数据D1OUT。由于不受电源电压VDD的急剧变动的影响,所以在锁存电路D2中传输正常的数据(即输出数据D1OUT)。Therefore, if the pulse width of the latch signal WR2 passing through the AND circuit N1 is a length that can be eliminated by the filter circuit F1, the latch signal WR2E is not generated. Thus, the data latched by the latch signal WRE2 received last time is stably held in the latch circuit D2. On the other hand, if the pulse width of the latch signal WR2 passing through the AND circuit N1 is a length that cannot be removed by the filter circuit F1, then this latch signal WR2 is regarded as an effective signal, and is output by the latch circuit D2 as the latch signal WR2E. take over. As a result, the output data D1OUT output from the latch circuit D1 is transferred to the latch circuit D2. That is, the latch circuit D2 can stably latch the output data D1OUT at the edge of the latch signal WR2E regarded as an effective signal. Since it is not affected by sudden fluctuations in the power supply voltage VDD, normal data (that is, output data D1OUT) is transferred to the latch circuit D2.
再有,可被滤波电路F1去除的锁存信号WR2的脉冲宽度,例如可通过调整图3所示的CR电路的常数来决定。Furthermore, the pulse width of the latch signal WR2 that can be removed by the filter circuit F1 can be determined, for example, by adjusting constants of the CR circuit shown in FIG. 3 .
(4)的情形(图9的情形)下,锁存电路D2已经取得正常的数据。而且,锁存电路D2,直到电源电压VDD恢复到正常值之前,都不会再次接收锁存信号。因此,在锁存电路D2中稳定地保持由前次接收的锁存信号WRE2所锁存的数据。In the case of (4) (the case of FIG. 9 ), the latch circuit D2 has already acquired normal data. Moreover, the latch circuit D2 will not receive the latch signal again until the power supply voltage VDD returns to a normal value. Therefore, the data latched by the latch signal WRE2 received last time is stably held in the latch circuit D2.
在发生电源电压VDD的急剧变动后,电源电压VDD慢慢地上升到常规值。在不能准备输入数据DIN的最新值的期间,输出数据DOUT以极短的延迟从电源电压变动对策电路100中输出。在此期间输出的数据是电源电压VDD的急剧变动期间保持的数据,是电源电压VDD的急剧变动发生之前的数据。After a sharp fluctuation of the power supply voltage VDD occurs, the power supply voltage VDD gradually rises to a normal value. While the latest value of input data DIN cannot be prepared, output data DOUT is output from power supply voltage fluctuation countermeasure circuit 100 with an extremely short delay. The data output during this period is data held during a sudden change in the power supply voltage VDD, and is data before the sudden change in the power supply voltage VDD occurs.
再有,在不是电源电压VDD的急剧变动,而是原来的电源电压VDD停止供电(例如主电源的电源关闭等)的情况下,电源电压变动对策电路100在从电源电压VDD停止供电时刻起最初的期间保持数据。但是,由于电容器C1的电荷通过电阻元件R1放电,所以最终由电源电压变动对策路100保持的数据将消失。如此,通过设置可由电阻元件R1等放电元件进行放电的结构,在原来的电源电压的停止供电后再次接通电源时,可以防止输出该电源电压的供电停止前的最终值(即误输出)。In addition, when there is no sudden change in the power supply voltage VDD, but the power supply of the original power supply voltage VDD is stopped (for example, the power supply of the main power supply is turned off), the power supply voltage fluctuation countermeasure circuit 100 initially hold data for a period of time. However, since the charge of the capacitor C1 is discharged through the resistance element R1, the data held by the power supply voltage variation countermeasure circuit 100 will eventually disappear. In this way, by providing a discharge element such as the resistance element R1, when the power supply is turned on again after the original power supply voltage is stopped, it is possible to prevent output of the final value of the power supply voltage before the power supply stop (that is, erroneous output).
因此,按照上述说明,即使是数据锁存时刻(锁存信号为上升时刻)和电源电压急剧变动的时刻一致的情况下,由于输入到第2锁存电路的锁存信号的相位比输入到第1锁存电路的锁存信号延迟,所以能避免在锁存电路中保持的数据的消失。Therefore, according to the above description, even when the data latch timing (the latch signal rising timing) coincides with the timing of sudden fluctuations in the power supply voltage, since the phase ratio of the latch signal input to the second latch circuit to the second latch circuit is 1 Since the latch signal of the latch circuit is delayed, it is possible to avoid erasure of data held in the latch circuit.
即,在锁存电路D1的锁存时刻发生电源电压的急剧变动时,由于没有产生锁存电路D2的锁存信号,所以保持锁存电路D2内的数据,不变化。That is, when the power supply voltage suddenly fluctuates at the latch timing of the latch circuit D1, since the latch signal of the latch circuit D2 is not generated, the data in the latch circuit D2 is held without changing.
此外,在锁存电路D2的锁存时刻发生电源电压的急剧变动时,如果相对于锁存电路D2的锁存信号,此锁存信号的脉冲宽度短的话,则被滤波电路全部滤除。如果此锁存信号的脉冲宽度长的话,则由于不会被滤波电路消除而被维持,所以锁存电路D1的正常的数据依照通过滤波电路的锁存信号被传输给锁存电路D2。Also, when a sudden change in the power supply voltage occurs at the latching timing of the latch circuit D2, if the pulse width of the latch signal is shorter than that of the latch signal of the latch circuit D2, all of it is filtered out by the filter circuit. If the pulse width of the latch signal is long, it is maintained without being canceled by the filter circuit, so the normal data of the latch circuit D1 is transmitted to the latch circuit D2 according to the latch signal passed through the filter circuit.
再有,可以将2个锁存信号间的延迟宽度设定得比假设为电源电压急剧地变动的时间的最大值还要长。In addition, the delay width between the two latch signals can be set longer than the maximum value of the time when the power supply voltage fluctuates rapidly.
但是,通过调整背靠背反向器的芯片部的尺寸来设定锁存电路D1、D2内的寄存器的初始值。通过使构成2个背靠背反向器的多个晶体管的栅极宽度和栅极长度之比在这些多个晶体管间不是平衡的,而将它们设定为不平衡,由此能使IC的电源接通时的寄存器的初始值必定定为规定值(1或0)。However, the initial values of the registers in the latch circuits D1 and D2 are set by adjusting the size of the chip part of the back-to-back inverter. By making the ratio of gate width and gate length of a plurality of transistors constituting two back-to-back inverters unbalanced among these plurality of transistors, and setting them to be unbalanced, the power supply connection of the IC can be made The initial value of the register when it is turned on must be set to a predetermined value (1 or 0).
图4是锁存电路的寄存器的芯片部的结构图。如下所示,能预置各寄存器的初始值。晶体管Q1、Q2、Q3、Q4形成2个用于数据保持的正反馈的背靠背反向器。通常,为了形成平衡的结构,相等地设计Q1和Q3的尺寸以及Q2和Q4的尺寸。在此平衡结构的情况下,作为2个背靠背反向器的输入输出值的A、B点的值取随机的初始值。4 is a configuration diagram of a chip portion of a register of a latch circuit. The initial value of each register can be preset as shown below. Transistors Q1, Q2, Q3, and Q4 form two back-to-back inverters for positive feedback for data retention. Generally, to form a balanced structure, Q1 and Q3 are equally sized and Q2 and Q4 are sized. In the case of this balanced structure, the values of points A and B, which are the input and output values of the two back-to-back inverters, take random initial values.
另一方面,在本发明中,晶体管Q1、Q2、Q3、Q4的栅极尺寸在各晶体管间被设定为不平衡。例如,希望将输出端子QO的初始值预置为1的时侯,可通过如下所示的4个设定方法中的任意一个方法将输出端子QO的初始值预置为1。On the other hand, in the present invention, the gate sizes of the transistors Q1, Q2, Q3, and Q4 are set to be unbalanced among the transistors. For example, when you want to preset the initial value of the output terminal QO to 1, you can preset the initial value of the output terminal QO to 1 by any one of the four setting methods shown below.
[设定方法1][setting method 1]
将晶体管Q4的栅极宽度和栅极长度之比设定得大于Q2的栅极宽度和栅极长度之比,将晶体管Q1和Q3的尺寸设定得相等。由此就能使晶体管Q4易于导通。The ratio of the gate width to the gate length of transistor Q4 is set to be larger than the ratio of gate width to gate length of Q2, and the dimensions of transistors Q1 and Q3 are set to be equal. This enables transistor Q4 to be easily turned on.
[设定方法2][setting method 2]
将晶体管Q3的栅极宽度和栅极长度之比设定得小于Q1的栅极宽度和栅极长度之比,将晶体管Q2和Q4的尺寸设定得相等。由此就能使晶体管Q1易于导通。The ratio of the gate width to the gate length of transistor Q3 is set to be smaller than the ratio of gate width to gate length of Q1, and the dimensions of transistors Q2 and Q4 are set to be equal. As a result, transistor Q1 can be easily turned on.
[设定方法3][setting method 3]
将晶体管Q4的栅极宽度和栅极长度之比设定得大于Q2的栅极宽度和栅极长度之比,将晶体管Q3的栅极宽度和栅极长度之比设定得小于Q1的栅极宽度和栅极长度之比。由此就能使晶体管Q1和Q4易于导通。The ratio of gate width to gate length of transistor Q4 is set to be larger than the ratio of gate width to gate length of Q2, and the ratio of gate width to gate length of transistor Q3 is set to be smaller than that of Q1 Ratio of width to gate length. This makes it easy to turn on the transistors Q1 and Q4.
通过这些任意一个设定方法,打破晶体管的尺寸的平衡,使A点趋于比B点更低的方向。而且,通过正反馈的动作,由于将点B的值收敛在0、将点A的值收敛在1,所以能将输出端子QO的初始值预置为1。同样地考虑,通过使上述设定方法中示出的比的大小关系相反,就能将输出端子QO的初始值预置为0。By any one of these setting methods, the balance of the dimensions of the transistors is broken, and the point A tends to be lower than the point B. Furthermore, since the value at point B converges to 0 and the value at point A converges to 1 by the positive feedback operation, the initial value of the output terminal QO can be preset to 1. In the same way, the initial value of the output terminal QO can be preset to 0 by inverting the magnitude relationship of the ratio shown in the above setting method.
实施例Example
图5是应用了本发明的芯片的具体例。低速取样的AD变换器(ADC)由作为数字逻辑器的数字控制单元控制,周期地产生针对电源电压变动对策电路的数据DIN。锁存信号WR1和WR2由遵循时序的数字逻辑器产生。ADC按一个采样/ms的速率输出数据DIN的情况下,要是没有电源电压变动对策电路的话,则为了使最终值恢复为输出DOUT而需要1ms。但是根据本发明,用几十μs就能使最终值恢复为输出DOUT。FIG. 5 is a specific example of a chip to which the present invention is applied. The low-speed sampling AD converter (ADC) is controlled by the digital control unit as a digital logic device, and periodically generates data DIN for the power supply voltage fluctuation countermeasure circuit. Latch signals WR1 and WR2 are generated by sequential digital logic. When the ADC outputs data DIN at a rate of 1 sample/ms, if there is no power supply voltage fluctuation countermeasure circuit, it takes 1ms to return the final value to output DOUT. However, according to the present invention, the final value can be restored to the output DOUT in tens of μs.
在上文中,虽然详细说明了本发明优选的实施例,但本发明不限于上述的实施例,不脱离本发明的范围、并在上述的实施例中能追加各种变形及替换。Although preferred embodiments of the present invention have been described in detail above, the present invention is not limited to the above embodiments, and various modifications and substitutions can be added to the above embodiments without departing from the scope of the present invention.
例如,可以相互替换图1、12~15内的各构成部件。For example, each component in FIGS. 1, 12 to 15 can be replaced with each other.
Claims (12)
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN2009101333843A CN101859595B (en) | 2009-04-07 | 2009-04-07 | Latch device and latch method thereof |
JP2009119835A JP5262981B2 (en) | 2009-04-07 | 2009-05-18 | Latch device and latch method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN2009101333843A CN101859595B (en) | 2009-04-07 | 2009-04-07 | Latch device and latch method thereof |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101859595A CN101859595A (en) | 2010-10-13 |
CN101859595B true CN101859595B (en) | 2012-04-04 |
Family
ID=42945433
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2009101333843A Expired - Fee Related CN101859595B (en) | 2009-04-07 | 2009-04-07 | Latch device and latch method thereof |
Country Status (2)
Country | Link |
---|---|
JP (1) | JP5262981B2 (en) |
CN (1) | CN101859595B (en) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5717583B2 (en) * | 2011-08-09 | 2015-05-13 | リコー電子デバイス株式会社 | Logic circuit and portable terminal device |
CN116614110B (en) * | 2023-04-28 | 2025-05-30 | 安徽大学 | Four-node overturning-resistant latch circuit and module based on reinforcement technology |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1360396A (en) * | 2000-12-21 | 2002-07-24 | 日本电气株式会社 | Clock and data restoring circuit and its clock control method |
CN1816967A (en) * | 2003-09-19 | 2006-08-09 | 印芬龙科技股份有限公司 | Master latch circuit with signal level displacement for a dynamic flip-flop |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0350935U (en) * | 1989-09-22 | 1991-05-17 | ||
JPH066185A (en) * | 1992-06-16 | 1994-01-14 | Ricoh Co Ltd | Circuit for not propagating meta-stable state |
JP3429937B2 (en) * | 1996-01-12 | 2003-07-28 | 三菱電機株式会社 | Semiconductor device |
JP3896957B2 (en) * | 2002-11-28 | 2007-03-22 | 株式会社デンソー | Level shift circuit |
JP4656040B2 (en) * | 2006-10-19 | 2011-03-23 | 株式会社デンソー | Electronic circuit |
-
2009
- 2009-04-07 CN CN2009101333843A patent/CN101859595B/en not_active Expired - Fee Related
- 2009-05-18 JP JP2009119835A patent/JP5262981B2/en not_active Expired - Fee Related
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1360396A (en) * | 2000-12-21 | 2002-07-24 | 日本电气株式会社 | Clock and data restoring circuit and its clock control method |
CN1816967A (en) * | 2003-09-19 | 2006-08-09 | 印芬龙科技股份有限公司 | Master latch circuit with signal level displacement for a dynamic flip-flop |
Also Published As
Publication number | Publication date |
---|---|
CN101859595A (en) | 2010-10-13 |
JP2010246074A (en) | 2010-10-28 |
JP5262981B2 (en) | 2013-08-14 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US7639052B2 (en) | Power-on-reset circuitry | |
CN107272856B (en) | Low power reset circuit | |
CN100451663C (en) | Power supply level detector | |
US7986149B2 (en) | System and method for adaptive load fault detection | |
CN110518561A (en) | A kind of power clamp ESD protective circuit and integrated circuit structure | |
TW201626722A (en) | Low power externally biased power-on-reset circuit | |
JP5157313B2 (en) | Semiconductor device | |
WO2017149956A1 (en) | Signal output circuit | |
JP5435081B2 (en) | Semiconductor device | |
CN101859595B (en) | Latch device and latch method thereof | |
KR101366768B1 (en) | Integrated fault output/fault response delay circuit | |
US10656218B2 (en) | Leakage current detection apparatus and detection method thereof | |
CN105591637B (en) | The module that automatically resets in integrated circuit | |
CN110400798A (en) | A fast discharge RC type ESD protection circuit | |
KR20100079071A (en) | Circuit for power on | |
JP4776968B2 (en) | Temperature protection circuit, semiconductor integrated circuit device, power supply device, electrical equipment | |
US20190271728A1 (en) | Device and method for detecting a number of electrostatic discharges | |
US12326465B2 (en) | Detector circuit | |
JP2007096661A (en) | Delay circuit, charge and discharge method of capacitor therein, and power system device using the same | |
JP6753344B2 (en) | Leakage detector | |
CN119675639A (en) | Short circuit protection circuit for power tube | |
CN101677239A (en) | Power supply initial reset signal generation circuit and method | |
JP2021077926A (en) | Semiconductor device and operation method for the same | |
CN119994819A (en) | A self-recovery method and circuit for chip ESD protection system | |
CN101354427B (en) | Method for testing leading edge shielding parameter of power management chip |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
CF01 | Termination of patent right due to non-payment of annual fee | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20120404 Termination date: 20160407 |