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CN101836341B - 用于传递dc和rf信号的浪涌保护电路 - Google Patents

用于传递dc和rf信号的浪涌保护电路 Download PDF

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CN101836341B
CN101836341B CN200880113160.XA CN200880113160A CN101836341B CN 101836341 B CN101836341 B CN 101836341B CN 200880113160 A CN200880113160 A CN 200880113160A CN 101836341 B CN101836341 B CN 101836341B
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protection circuit
surge protection
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CN101836341A (zh
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乔纳森·L·琼斯
克里斯·潘威尔
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P1/00—Auxiliary devices
    • H01P1/20—Frequency-selective devices, e.g. filters
    • H01P1/201—Filters for transverse electromagnetic waves
    • H01P1/203—Strip line filters
    • H—ELECTRICITY
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    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/0213—Electrical arrangements not otherwise provided for
    • H05K1/0254—High voltage adaptations; Electrical insulation details; Overvoltage or electrostatic discharge protection ; Arrangements for regulating voltages or for using plural voltages
    • H05K1/0257—Overvoltage protection
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/0213—Electrical arrangements not otherwise provided for
    • H05K1/0237—High frequency adaptations
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/18—Printed circuits structurally associated with non-printed electric components
    • H05K1/181—Printed circuits structurally associated with non-printed electric components associated with surface mounted components
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
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    • H05K2201/10—Details of components or other objects attached to or integrated in a printed circuit board
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    • H05K2201/1003—Non-printed inductor
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/10—Details of components or other objects attached to or integrated in a printed circuit board
    • H05K2201/10007—Types of components
    • H05K2201/10174—Diode

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Abstract

一种浪涌保护电路，包括调谐电路板，该调谐电路板具有设计成在用微带线将RF信号传播通过PCB电介质的同时提供浪涌保护和RF隔离DC通路的迹线。该浪涌保护电路利用诸如分解多级DC保护方案的四分之一迹线或电感器的高阻抗RF去耦器件，该多级DC保护方案可以包括气体放电管、诸如电感器和/或电阻器的连续浪涌阻碍器件、去耦空气/火花隙器件和齐纳二极管结。

Description

用于传递DC和RF信号的浪涌保护电路
相关申请的交叉引用
本申请要求2007年10月30日提交的序列号为60/983,905、名称为“SURGE PROTECTION CIRCUIT FOR PAS SING DC AND RFSIGNALS”的临时专利申请的优先权，其内容以引用方式全部并入本文。
技术领域
本发明涉及浪涌保护。更具体来讲，本发明涉及用于传递DC和RF信号的浪涌保护电路。
背景技术
诸如手机发射塔(cell tower)、基站和移动装置的通信设备越来越多地使用非常容易受电浪涌损害的小电子组件来制造。供电和输电线路电压的浪涌变化以及噪声会改变工作的频率范围，并且会严重损害和/或损坏通信设备。此外，维修和更换通信设备可能非常昂贵。
能够造成有害电浪涌的源有很多。一个源是会从多个源耦合到供电和输电线路的射频(RF)干扰。供电和输电线路产生大的天线的效果，其可以延伸数英里，由此从诸如射频广播天线的源收集相当大量的RF噪声功率。另一个有害的源是传导噪声，该传导噪声由与供电和输电线路连接的通信设备产生并且沿着输电线传导至将受到保护的通信设备。再一个有害的电浪涌是闪电。闪电是一种复杂的电磁能源，其具有估计为500万伏至2000万伏的电势以及高达数千安培的电流。
理想地，所需的是在调谐电路板上的浪涌保护电路，其中，浪涌保护电路应用高阻抗RF去耦器件，这些去耦器件隔离了(isolate)多级DC保护方案。
发明内容
一种浪涌保护电路可以包括调谐电路板，该调谐电路板具有设计成在用微带线将RF信号传播通过PCB电介质的同时提供浪涌保护和RF隔离的DC通路的迹线。该浪涌保护电路应用诸如隔离了(isolate)多级DC保护方案的四分之一波长迹线或电感器的高阻抗RF去耦器件，该多级DC保护方案可以包括气体放电管、诸如电感器和/或电阻器的连续浪涌阻碍器件、去耦空气/火花隙器件和齐纳二极管结。
一种浪涌保护电路包括：电路板；气体放电管，设置在所述电路板上；浪涌中心针，电连接到所述放电管；耦合微带，设置在所述电路板上并且连接到所述浪涌中心针，用于传播RF信号；以及保护中心针，连接到所述耦合微带，用于传递DC电流。
一种用于传递DC和RF信号的浪涌保护电路包括：电路板，所述电路板具有第一面和第二面；浪涌针，所述浪涌针连接到所述电路板的第一面；保护针，所述保护针连接到所述电路板的第一面；第一耦合微带，所述第一耦合微带连接到所述电路板的第一面并且连接到所述浪涌针；以及第二耦合微带，所述第二耦合微带连接到所述电路板的第二面并且连接到所述保护针。所述浪涌保护电路还可以包括高阻抗器件、电感器以及齐纳结器件，所述高阻抗器件连接到所述第一耦合微带，所述电感器连接到所述高阻抗器件，所述齐纳结器件连接到所述电感器。
附图说明
从以下所述的结合附图的具体实施方式中，本发明的特征、目的和优点将变得更清楚：
图1是根据本发明实施例的浪涌保护电路的底部透视图；
图2是根据本发明实施例的图1中的浪涌保护电路的底部平面图；
图3是根据本发明实施例的图1中的浪涌保护电路的侧视图；
图4是根据本发明实施例的图1中的浪涌保护电路的顶部平面图；
图5是根据本发明实施例的图1中的浪涌保护电路的顶部透视图；
图6是根据本发明实施例的图1中的浪涌保护电路的原理图；以及
图7是根据本发明实施例的图1中的浪涌保护电路的原理图。
具体实施方式
现在，将参照附图描述用于实现本发明各个特征的实施例的设备、系统和方法。提供附图和相关描述用来示出本发明的一些实施例而并不限制本发明的保护范围。在整个附图中，重复使用附图标记以表示参考元件之间的对应关系。另外，每个附图标记的第一位表示该元件在哪个附图中首次出现。
图1至图7示出了根据本发明实施例的浪涌保护电路100的各种视图和原理图。浪涌保护电路100提供了具有DC通路或馈电特性的RF耦合。浪涌保护电路100可以包括印刷电路板(PCB)101、浪涌中心针105、保护中心针110、气体放电管115、齐纳结120、去耦电容器125、126和128、阻抗器件127、电感器130、耦合微带135、高阻抗元件140和火花隙元件145。浪涌保护电路100中的组件或元件可以焊接或者形成在PCB 101上。耦合微带135和高阻抗元件140可以形成为在PCB 101上的迹线。浪涌保护电路100提供DC传递能力、优良的电压限制保护、紧凑的尺寸和合理的带宽。
浪涌保护电路100在浪涌中心针105和保护中心针110之间传递DC和RF信号。浪涌中心针105和保护中心针110可以是中心针传播DC电流和RF信号并且外屏蔽包围该中心针的同轴线。浪涌中心针105和保护中心针110维持系统RF阻抗(例如，50欧姆、75欧姆等)。保护中心针110上的DC电压用作工作电压，以向耦合到保护中心针110的电子组件供电。
对于高瞬态浪涌情况，气体放电管115可以并入或者设置在PCB101上。气体放电管115的引线可以直接连接到浪涌中心针105，以显著减小通过较薄PCB铜迹线的电流，并且气体放电管115的相对端可以机械地或者电气地连接到提供通向地的通路的电路包壳(enclosure)(未示出)，或者直接连接到地。气体放电管115可以实现为与电感器130相关地触发，以向浪涌/DC通路增加阻抗。气体放电管115可基于电容、导通电压和浪涌电流的额定来选择。常规额定可以是大致1.5pF的电容、150V的导通电压和10kA的浪涌电流。
齐纳结120可以是通过横向嵌入穿过PCB 101而集成到PCB 101中的二极管。即，齐纳结120被设置为穿过PCB 101。齐纳结120的第一端连接到DC通路迹线和电感器130，并且齐纳结120的第二端连接到PCB地(线)。在正常工作期间，齐纳结120是可透过的。齐纳结120可以基于电路工作电压、导通电压和浪涌电流的额定来选择。常规额定可以是大致5V的DC工作电压、6V的导通电压和5kA的浪涌电流。
去耦电容器125连接在高阻抗元件140和电路的地(线)之间。去耦电容器126连接在阻抗器件127和电路的地(线)之间。阻抗器件127(例如，电感器和/或电容器)可以连接到电感器130和齐纳结120和/或高阻抗元件140。在一个实施例中，阻抗器件127可以连接到DC馈电端口(参见图7)，这允许电流源连接到DC馈电端口，以向将受保护的电路和/或设备提供DC电流。去耦电容器128连接在高阻抗元件140和电路的地(线)之间。去耦电容器125、126和128提供RF分路(RF shunt)以稳定高阻抗元件140并且还提供一定的DC滤波。
电感器130具有大约＞0.5uH的电感。电感器130焊接到PCB 101并且用于产生高浪涌阻抗。电感器130可以附着到PCB 101的第一面，并且气体放电管115可以附着到PCB 101的第二面或相对面，如图1和图3所示。在低频(例如，DC或60Hz)下，电感器130短路并且允许这些电压不受阻碍地流向其他组件。在较高的电压波阵面和di/dt等级下，电感器130将阻止电流并且产生将电压电平有效衰减至随后的各保护级的电压降。电感器130还延迟浪涌电流，以允许气体放电管115有时间被触发。
耦合微带135可以用作RF信号的传输线(例如，50欧姆、75欧姆等)。通过PCB 101上的线-线耦合来实现RF耦合。PCB 101的电介质特性产生电容器的效果，以允许在阻止所有的DC电压的同时在电介质之间能够耦合高频信号。为了通过PCB 101来实现RF耦合，耦合微带135的宽度和长度是频率的函数，以使得浪涌中心针105和保护中心针110之间的阻抗低并且RF能量耦合的量高。
为了增加PCB 101上对DC组件(例如，二极管、MOV等)的RF阻抗，使用了高阻抗元件140以在所需频率处生成RF断路(RFopen)。高阻抗元件140可以是四分之一波长器件或元件、电感器、电阻器和它们的组合。高阻抗元件140的长度可以是基频的长度的四分之一。还可以选择传导元件以用于较低频或者PCB尺寸最佳的情况。高阻抗元件140用于相对窄带的应用。在其他频率下，高阻抗元件140产生RF短路的效果，而提高了RF路径上RF信号的带外抑制。在一个实施例中，高阻抗元件140由PCB上的迹线或金属制成。高阻抗元件140具有作为频率的函数的高电阻特性。高阻抗元件140可以具有非常低的DC电阻，但是具有非常高的RF电阻。
火花隙元件145设置在高阻抗元件140的端部，并且毗邻地迹线，以防气体放电管115在极度过压的情况下没有足够快地触发。火花隙元件145连接到去耦电容器125、电感器130和高阻抗元件140。火花隙元件145与RF通路去耦，并且可以被构造为非常靠近电路的地(线)放电通路而不影响RF性能。火花隙元件145可以是大约0.025英寸，以允许在小于约10kA 8us/20us的浪涌特性的情况期间的正常多级动作。超过以上并被视为灾难性的情况将造成火花隙元件145处的打火花，从而有效地将浪涌中心针105短路至地。
PCB地平面和地迹线电接地至为浪涌电流提供低阻抗接地通路的盒(box)。当浪涌中心针105上的DC电压低于齐纳结120的阈值电压时，没有电流通过齐纳结120，并且所有电流从浪涌中心针105流向保护中心针110。
提供了所公开实例的以上说明以使得本领域的任何普通技术人员能够使用公开的方法和设备。对于本领域的技术人员，这些实例的各种更改是显而易见的，并且在不脱离所公开的方法和设备的精神或范围的情况下，本文定义的原理可以应用到其他实例。所描述的实施例在所有方面将仅被视为是示例性的而非限制性的，因此，本发明的保护范围由所附权利要求书而非以上说明来指出。落入权利要求的等价含义和范围内的所有变化将包含在权利要求的范围内。

Claims (20)

1.一种浪涌保护电路，包括：
电路板；
气体放电管，设置在所述电路板上；
浪涌中心针，电连接到所述气体放电管；
耦合微带，设置在所述电路板上并且连接到所述浪涌中心针，用于传播RF信号；以及
保护中心针，连接到所述耦合微带，用于传递DC电流。
2.根据权利要求1所述的浪涌保护电路，还包括：设置在所述电路板上并且连接到所述耦合微带的高阻抗元件。
3.根据权利要求2所述的浪涌保护电路，其中，所述高阻抗元件选自由四分之一波长元件、电感器、电阻器和它们的组合所构成的组中。
4.根据权利要求2所述的浪涌保护电路，还包括：连接到所述高阻抗元件的齐纳结器件。
5.根据权利要求2所述的浪涌保护电路，还包括：
电感器，连接到所述高阻抗元件；以及
齐纳结器件，连接到所述电感器。
6.根据权利要求5所述的浪涌保护电路，还包括：连接到所述电感器并且设置在所述电路板上的阻抗器件。
7.根据权利要求6所述的浪涌保护电路，还包括：连接到所述高阻抗元件的火花隙元件。
8.根据权利要求7所述的浪涌保护电路，其中，所述电感器具有连接到所述火花隙元件的第一端和连接到阻抗器件的第二端。
9.根据权利要求3所述的浪涌保护电路，还包括：火花隙元件，该火花隙元件借助四分之一波长或电感器型的高阻抗元件与RF通路隔离开。
10.一种用于传递DC和RF信号的浪涌保护电路，包括：
电路板，具有第一面和第二面；
浪涌针，连接到所述电路板的第一面；
保护针，连接到所述电路板的第一面；
第一耦合微带，连接到所述电路板的第一面并且连接到所述浪涌针；
第二耦合微带，连接到所述电路板的第二面并且连接到所述保护针；
高阻抗器件，连接到所述第一耦合微带；
电感器，连接到所述高阻抗器件；以及
齐纳结器件，连接到所述电感器。
11.根据权利要求10所述的浪涌保护电路，还包括：连接到所述浪涌针并且连接到所述电路板的第一面的气体放电器件。
12.根据权利要求10所述的浪涌保护电路，其中，所述高阻抗器件选自由四分之一波长元件、电感器、电阻器和它们的组合所构成的组中。
13.根据权利要求10所述的浪涌保护电路，其中，所述齐纳结器件被设置成穿过所述电路板。
14.根据权利要求10所述的浪涌保护电路，其中，所述齐纳结器件是齐纳二极管。
15.根据权利要求10所述的浪涌保护电路，还包括：连接到所述高阻抗器件的空气隙器件。
16.根据权利要求15所述的浪涌保护电路，其中，将所述空气隙器件集成到所述电路板中。
17.根据权利要求10所述的浪涌保护电路，还包括：连接到所述电感器的DC馈电端口。
18.根据权利要求10所述的浪涌保护电路，还包括：使用所述高阻抗元件与RF通路隔离开的火花隙元件。
19.根据权利要求10所述的浪涌保护电路，还包括：连接到所述电感器的第一端的第一去耦电容器。
20.根据权利要求19所述的浪涌保护电路，还包括：连接到所述电感器的第二端的第二去耦电容器。
CN200880113160.XA 2007-10-30 2008-10-30 用于传递dc和rf信号的浪涌保护电路 Expired - Fee Related CN101836341B (zh)

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