CN101819924A - Manufacturing method of high-precision resistor - Google Patents
Manufacturing method of high-precision resistor Download PDFInfo
- Publication number
- CN101819924A CN101819924A CN201010164850A CN201010164850A CN101819924A CN 101819924 A CN101819924 A CN 101819924A CN 201010164850 A CN201010164850 A CN 201010164850A CN 201010164850 A CN201010164850 A CN 201010164850A CN 101819924 A CN101819924 A CN 101819924A
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- Prior art keywords
- metal
- precision resister
- manufacture method
- layer
- precision
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 40
- 229910052751 metal Inorganic materials 0.000 claims abstract description 59
- 239000002184 metal Substances 0.000 claims abstract description 59
- 238000000034 method Methods 0.000 claims abstract description 37
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 15
- 229910052814 silicon oxide Inorganic materials 0.000 claims abstract description 15
- 239000000758 substrate Substances 0.000 claims abstract description 11
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 claims abstract description 9
- 238000005530 etching Methods 0.000 claims abstract description 8
- 238000000151 deposition Methods 0.000 claims abstract description 7
- 238000001259 photo etching Methods 0.000 claims abstract 2
- 239000004020 conductor Substances 0.000 claims description 16
- FGUUSXIOTUKUDN-IBGZPJMESA-N C1(=CC=CC=C1)N1C2=C(NC([C@H](C1)NC=1OC(=NN=1)C1=CC=CC=C1)=O)C=CC=C2 Chemical compound C1(=CC=CC=C1)N1C2=C(NC([C@H](C1)NC=1OC(=NN=1)C1=CC=CC=C1)=O)C=CC=C2 FGUUSXIOTUKUDN-IBGZPJMESA-N 0.000 claims description 6
- 238000005234 chemical deposition Methods 0.000 claims description 3
- 230000008021 deposition Effects 0.000 claims description 2
- 239000000126 substance Substances 0.000 abstract description 3
- 238000005498 polishing Methods 0.000 abstract 1
- 238000005516 engineering process Methods 0.000 description 5
- 239000000428 dust Substances 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 1
- 101100321817 Human parvovirus B19 (strain HV) 7.5K gene Proteins 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
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Abstract
The invention provides a manufacturing method of a high-precision resistor, comprising the following steps of: providing a substrate which comprises a plurality of first metal plugs and a first intermetallic dielectric medium among the first metal plugs; forming a first metal layer on the substrate and etching the first metal layer to form a plurality of first metal wires which are connected with the first metal plugs, respectively; depositing a first silicon oxide layer; forming a titanium nitride (TiN) layer on the first silicon oxide layer and carrying out the photo-etching process for the titanium nitride (TiN) layer to form the high-precision resistor; and depositing a second intermetallic dielectric medium and carrying out the chemical mechanical polishing on the second intermetallic dielectric medium. By adopting the manufacturing method, a resistor ranging from 10 ohm/sq to 50 ohm/sq within the precision scale of +/-10% can be manufactured, and the manufactured resistor is compatible with standard CMOS process.
Description
Technical field
The present invention relates to IC and make the field, relate in particular to the resistance in analog chip or the radio frequency chip.
Background technology
At IC (integrated circuit (IC) chip) manufacturing field, particularly analog IC and radio frequency IC, need certain resistance size, as tens ohms/square, and the higher build-out resistor of ratio of precision.If adopt lead or metal commonly used in the IC manufacturing process, as copper or aluminium, because its resistivity is very little, so be difficult to obtain bigger resistance.If the employing polysilicon resistance, the precision of then very difficult control resistance.Therefore be badly in need of a kind of method of making precision resister is provided, and this method needs and the CMOS technology of standard is compatible fully.
Summary of the invention
In order to solve in the prior art, utilize in the IC manufacturing process lead commonly used or metal to be difficult to obtain bigger resistance, the invention provides the manufacture method of precision resister.The manufacture method of described precision resister comprises the steps:
A) provide substrate, described substrate comprises first inter-metal dielectric between a plurality of first metal plugs and described first metal plug;
B) form the first metal layer in described substrate, and the described the first metal layer of etching to be to form a plurality of first plain conductors, described first plain conductor connects described first metal plug respectively;
C) deposition first silicon oxide layer;
D) on described first silicon oxide layer, form titanium nitride layer, and described titanium nitride layer is carried out chemical wet etching technology, form precision resister;
E) deposit second inter-metal dielectric layer, and described second inter-metal dielectric layer is carried out cmp.
Preferably, in the manufacture method of described precision resister, depositing described first silicon oxide layer is to utilize the high-density plasma chemical deposition process.
Preferably, in the manufacture method of described precision resister, also comprise step f) after the step e): form a plurality of second metal plugs in described second inter-metal dielectric layer, described second metal plug connects first plain conductor or described precision resister.
Preferably, in the manufacture method of described precision resister, also comprise after described step f): form second metal level, and described second metal level of etching to be to form a plurality of second plain conductors, described second plain conductor connects described second metal plug respectively; Form second silicon oxide layer then.
Preferably, in the manufacture method of described precision resister, the thickness of described precision resister is that 300 dusts are to 1500 dusts.
Preferably, in the manufacture method of described precision resister, the value of described precision resister is: 10-50 ohms/square, precision be controlled at+and/-10%.
Preferably, in the manufacture method of described precision resister, described precision resister is the resistance in analog chip or the radio frequency chip.
The manufacture method of precision resister of the present invention can access the bigger high-precision resistance of resistance, and the manufacture method of described precision resister can be compatible fully with the manufacturing process of existing analog chip or radio frequency chip, can not increase extra cost.
Description of drawings
Fig. 1 to Fig. 7 is the structural representation that each step of manufacture method of the precision resister of the embodiment of the invention obtains.
Embodiment
In order to make protection scope of the present invention clear more understandable, with preferred embodiment technical scheme of the present invention is described below in conjunction with accompanying drawing of the present invention.
Fig. 1 to Fig. 7 is the structural representation that each step of manufacture method of the precision resister of the embodiment of the invention obtains.Please refer to Fig. 1 to shown in Figure 7, the manufacture method of precision resister is provided, comprise the steps:
A) provide substrate, described substrate comprises first inter-metal dielectric 10 of 8 of a plurality of first metal plugs 8 and described first metal plugs;
B) please refer to Fig. 1, form the first metal layer in described substrate, and the described the first metal layer of etching to be to form a plurality of first plain conductors 12, described first plain conductor 12 connects described first metal plug 8 respectively;
C) please refer to Fig. 2, deposit first silicon oxide layer 14; In the present embodiment, the thickness of described first silicon oxide layer 14 is the 7.5K dust.
D) please refer to Fig. 3, on described first silicon oxide layer 14, form titanium nitride layer, and described titanium nitride layer is carried out chemical wet etching technology, form precision resister 16; The method that forms described titanium nitride layer can be the physical sputtering deposition process.
E) please refer to Fig. 4, deposit second inter-metal dielectric layer 18, and described second inter-metal dielectric layer 18 is carried out cmp.
Preferably, in the manufacture method of described precision resister, depositing described first silicon oxide layer 14 is to utilize the high-density plasma chemical deposition process; The material of described first inter-metal dielectric 10 and second inter-metal dielectric 18 is the silex glass that is doped with fluorine ion, and the formation method is a plasma enhanced chemical vapor deposition.
Please refer to Fig. 5, in the manufacture method of described precision resister, also comprise step f) after the step e): form a plurality of second metal plugs 19 in described second inter-metal dielectric layer 18, described second metal plug 19 connects first plain conductor 12 or described precision resister 16.
Please refer to Fig. 6 and Fig. 7, in the manufacture method of described precision resister, also comprise after described step f): form second metal level, and described second metal level of etching to be to form a plurality of second plain conductors 20, described second plain conductor 20 connects described second metal plug 19 respectively; Form second silicon oxide layer 22 then.In the present embodiment, distance between described the first metal layer and described second metal level is 8K (a 8000) dust, distance between described precision resister and described second metal level is 6.5K (a 6500) dust, and the distance between the described precision resister and nearest first plain conductor is 4um.
Preferably, in the manufacture method of described precision resister, the thickness of described precision resister is that 300 dusts are to 1500 dusts.
Preferably, in the manufacture method of described precision resister, the value of described precision resister is: 10-50 ohms/square, precision be controlled at+and/-10%.
Preferably, in the manufacture method of described precision resister, described precision resister is the resistance in analog chip or the radio frequency chip, like this, the CMOS technology of making the processing step of described precision resister and standard is compatible fully mutually, can not increase extra manufacturing cost.
The manufacture method of precision resister of the present invention, can produce high-precision (accuracy rating is ± 10%) resistance size and be the resistance of 10ohm/sq-50ohm/sq (ohms/square), the manufacture method of described precision resister can be complementary with the manufacturing process of analog chip or radio frequency chip, and especially the manufacturing process of cmos device is compatible mutually.
Each metal level, dielectric layer and oxide layer among the present invention, corresponding different metal level, dielectric layer and the oxide layers of possibility in concrete semiconductor device, as the first metal layer of the present invention, the N metal level of corresponding other semiconductor device of possibility.
Claims (7)
1. the manufacture method of precision resister is characterized in that, comprises the steps:
A) provide substrate, described substrate comprises first inter-metal dielectric between a plurality of first metal plugs and described first metal plug;
B) form the first metal layer in described substrate, and the described the first metal layer of etching to be to form a plurality of first plain conductors, described first plain conductor connects described first metal plug respectively;
C) deposition first silicon oxide layer;
D) on described first silicon oxide layer, form titanium nitride layer, and described titanium nitride layer is carried out photoetching and etching technics, form precision resister;
E) deposit second inter-metal dielectric layer, and described second inter-metal dielectric layer is carried out cmp.
2. the manufacture method of precision resister according to claim 1 is characterized in that, depositing described first silicon oxide layer is to utilize the high-density plasma chemical deposition process.
3. the manufacture method of precision resister according to claim 1, it is characterized in that, also comprise step f) after the step e): form a plurality of second metal plugs in described second inter-metal dielectric layer, described second metal plug connects first plain conductor or described precision resister.
4. the manufacture method of precision resister according to claim 3, it is characterized in that, also comprise after described step f): form second metal level, and described second metal level of etching to be to form a plurality of second plain conductors, described second plain conductor connects described second metal plug respectively; Form second silicon oxide layer then.
5. according to the manufacture method of each described precision resister among the claim 1-4, it is characterized in that the thickness of described precision resister is that 300 dusts are to 1500 dusts.
6. the manufacture method of precision resister according to claim 5 is characterized in that, the value of described precision resister is the 10-50 ohms/square, precision be+/-10%.
7. the manufacture method of precision resister according to claim 6 is characterized in that, described precision resister is the resistance in analog chip or the radio frequency chip.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201010164850A CN101819924A (en) | 2010-04-29 | 2010-04-29 | Manufacturing method of high-precision resistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201010164850A CN101819924A (en) | 2010-04-29 | 2010-04-29 | Manufacturing method of high-precision resistor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN101819924A true CN101819924A (en) | 2010-09-01 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201010164850A Pending CN101819924A (en) | 2010-04-29 | 2010-04-29 | Manufacturing method of high-precision resistor |
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1337745A (en) * | 2000-08-09 | 2002-02-27 | 精工电子有限公司 | Semiconductor device and method for producing same |
| US20020132442A1 (en) * | 2001-03-15 | 2002-09-19 | Conexant Systems, Inc. | Method for fabricating a metal resistor in an IC chip and related structure |
| US20040245580A1 (en) * | 1998-12-21 | 2004-12-09 | Mou-Shiung Lin | [chip structure with a passive device and method for forming the same] |
-
2010
- 2010-04-29 CN CN201010164850A patent/CN101819924A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20040245580A1 (en) * | 1998-12-21 | 2004-12-09 | Mou-Shiung Lin | [chip structure with a passive device and method for forming the same] |
| CN1337745A (en) * | 2000-08-09 | 2002-02-27 | 精工电子有限公司 | Semiconductor device and method for producing same |
| US20020132442A1 (en) * | 2001-03-15 | 2002-09-19 | Conexant Systems, Inc. | Method for fabricating a metal resistor in an IC chip and related structure |
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Owner name: SHANGHAI HUAHONG GRACE SEMICONDUCTOR MANUFACTURING Free format text: FORMER OWNER: HONGLI SEMICONDUCTOR MANUFACTURE CO LTD, SHANGHAI Effective date: 20140514 |
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Effective date of registration: 20140514 Address after: 201203 Shanghai Zhangjiang hi tech park Zuchongzhi Road No. 1399 Applicant after: Shanghai Huahong Grace Semiconductor Manufacturing Corporation Address before: 201203 Shanghai Guo Shou Jing Road, Zhangjiang hi tech Park No. 818 Applicant before: Hongli Semiconductor Manufacture Co., Ltd., Shanghai |
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Application publication date: 20100901 |