[go: up one dir, main page]

CN101814572A - Light-emitting diode packaging structure - Google Patents

Light-emitting diode packaging structure Download PDF

Info

Publication number
CN101814572A
CN101814572A CN201010130279A CN201010130279A CN101814572A CN 101814572 A CN101814572 A CN 101814572A CN 201010130279 A CN201010130279 A CN 201010130279A CN 201010130279 A CN201010130279 A CN 201010130279A CN 101814572 A CN101814572 A CN 101814572A
Authority
CN
China
Prior art keywords
photodiode
substrate
microlens array
light
structure according
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201010130279A
Other languages
Chinese (zh)
Inventor
陈志明
陈正清
郑静琦
邹庆福
赖腾宪
黄正翰
张君铭
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Xiji Science Technology Co ltd
Original Assignee
Xiji Science Technology Co ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Xiji Science Technology Co ltd filed Critical Xiji Science Technology Co ltd
Priority to CN201010130279A priority Critical patent/CN101814572A/en
Publication of CN101814572A publication Critical patent/CN101814572A/en
Pending legal-status Critical Current

Links

Images

Landscapes

  • Led Device Packages (AREA)

Abstract

本发明公开了一种光二极管封装结构,应用于一光二极管晶粒上,该封装结构包含:一基板,其具有一第一表面;一承载空间,其顶部开口位于该基板的该第一表面,其底部用以承载该光二极管晶粒;以及一光学材料层,其覆盖于该光二极管晶粒上并具有一微透镜阵列结构,其中该微透镜阵列结构位于该光二极管晶粒的上方,用以透射该光二极管晶粒所发出的光线及定义光型。本发明既能有效改善透镜结构与封装基座间相对位移所造成的对准及固定的问题,也不至工艺繁复与成本提高。

The present invention discloses a photodiode packaging structure, which is applied to a photodiode crystal, and the packaging structure comprises: a substrate having a first surface; a bearing space, the top opening of which is located on the first surface of the substrate, and the bottom of which is used to bear the photodiode crystal; and an optical material layer, which covers the photodiode crystal and has a microlens array structure, wherein the microlens array structure is located above the photodiode crystal to transmit the light emitted by the photodiode crystal and define the light type. The present invention can effectively improve the alignment and fixation problems caused by the relative displacement between the lens structure and the packaging base, and does not cause complicated processes and increased costs.

Description

光二极管封装结构 Photodiode Package Structure

技术领域technical field

本发明涉及一种光二极管封装结构,尤其涉及应用于一光二极管晶粒上的一种光二极管封装结构。The invention relates to a photodiode packaging structure, in particular to a photodiode packaging structure applied to a photodiode crystal grain.

背景技术Background technique

发光二极管(Light Emitting Diode以下简称LED)是一种可直接将电能转化为可见光和辐射能的发光器件,其发光的原理是在半导体内正负极两个端子施加电压,当电流通过,使电子与空穴相结合时,剩余能量便以光的形式释放,依其使用的材料的不同,其能阶高低使光子能量产生不同波长的光,因此,发光二极管(LED)通常具有工作电压低、耗电量小、发光效率高、发光响应时间极短、光色纯、结构牢固、抗冲击、耐振动、性能稳定可靠、重量轻体积小以及成本低等一系列特性,发光二极管的发展可说是突飞猛进,现已能大量生产整个可见光谱段各种颜色的高亮度、高性能产品。而发光二极管(LED)在业界的生产过程主要可分为上游是发光二极管(LED)衬底芯片及衬底生产,中游的产业为发光二极管(LED)芯片设计及制造生产,下游则为发光二极管(LED)封装与测试,其中发光二极管(LED)的封装是影响发光二极管(LED)成品是否精良的重要关键技术。Light Emitting Diode (Light Emitting Diode hereinafter referred to as LED) is a light-emitting device that can directly convert electrical energy into visible light and radiant energy. The principle of light emission is to apply voltage to the positive and negative terminals in the semiconductor. When combined with holes, the remaining energy is released in the form of light. Depending on the material used, the energy level makes the photon energy produce light of different wavelengths. Therefore, light-emitting diodes (LEDs) usually have low operating voltage, With a series of characteristics such as low power consumption, high luminous efficiency, extremely short luminous response time, pure light color, firm structure, impact resistance, vibration resistance, stable and reliable performance, light weight, small size and low cost, the development of light-emitting diodes can be said It is advancing by leaps and bounds, and now it can mass-produce high-brightness and high-performance products in various colors in the entire visible spectrum. The production process of light-emitting diodes (LEDs) in the industry can be mainly divided into the upstream is the production of light-emitting diode (LED) substrate chips and substrates, the midstream industry is the design and manufacture of light-emitting diode (LED) chips, and the downstream is light-emitting diode (LED) chip design and production. (LED) packaging and testing, among which the packaging of light-emitting diodes (LEDs) is an important key technology that affects whether the finished products of light-emitting diodes (LEDs) are excellent.

发光二极管封装结构是将单颗或多颗发光二极管(LED)固定于支架或基板之上,并通过打线或共晶等方式让发光二极管(LED)的正负电极与支架或基板上的电极相连接,并使用点胶或是压模的方式将发光二极管(LED)以环氧树脂或硅胶加以封装。请参见图1,其为公知的具有透镜结构的发光二极管封装结构示意图。从图中我们可以清楚地看出,该发光二极管封装结构1包含有一封装基座10与一透镜结构11,其中该封装基座10具有一承载空间12用来承载一发光二极管晶粒100,而该透镜结构11通过一黏合胶13(例如:硅氧烷树脂(Silicone)或是环氧树脂(Epoxy))来与该封装基座10的出光面101进行接合固定。然而,公知的具有透镜结构的发光二极管封装结构1在该透镜结构11与该封装基座10进行接合时,时常会发生该透镜结构11无法准确的对准该封装基座10的出光面101的中心点(如图中三角形符号所标示处),而造成该透镜结构11与该封装基座10之间有偏移的情况发生,或是在接合的过程中,该黏合胶13因施力不均导致该透镜结构11与封装基座10产生倾斜的情况。The packaging structure of light emitting diodes is to fix single or multiple light emitting diodes (LEDs) on the bracket or substrate, and connect the positive and negative electrodes of the light emitting diodes (LEDs) with the electrodes on the bracket or substrate by wire bonding or eutectic. The light-emitting diode (LED) is encapsulated with epoxy resin or silicone by dispensing glue or compression molding. Please refer to FIG. 1 , which is a schematic diagram of a known LED package structure with a lens structure. We can clearly see from the figure that the light emitting diode package structure 1 includes a package base 10 and a lens structure 11, wherein the package base 10 has a carrying space 12 for carrying a light emitting diode chip 100, and The lens structure 11 is bonded and fixed to the light-emitting surface 101 of the package base 10 through an adhesive 13 (for example, silicone resin (Silicone) or epoxy resin (Epoxy)). However, in the known LED packaging structure 1 with a lens structure, when the lens structure 11 is bonded to the package base 10, the lens structure 11 often cannot be accurately aligned with the light-emitting surface 101 of the package base 10. center point (marked by the triangle symbol in the figure), resulting in a deviation between the lens structure 11 and the package base 10, or in the bonding process, the adhesive 13 is not Both lead to the tilting of the lens structure 11 and the package base 10 .

如图2a-图2c,其为该透镜结构11与该封装基座10进行接合后产生偏移或倾斜示意图。如图2a和图2b所示,当该透镜结构11与该封装基座10接合的过程中,如图2a所示,该透镜结构11无法准确的对准该封装结构10的出光面101的中心点时(三角形符号所标示处),如图2b所示,便会产生该透镜结构11相对于该封装结构10的出光面101产生单向(X方向)或双向(X方向与Y方向)的线性偏移。如图2c所示,当在接合的过程中,因为施力不均而造成该接合胶13变形,进而导致该透镜结构11相对于该封装基座10的出光面101产生一偏斜倾角。上述的该透镜结构11与封装基座10在接合过程中所产生接合不良的情况,皆会产生该发光二极管晶粒100与该透镜结构11相对位置偏移过大,造成发光效率下降与光型的改变。此外,在该透镜结构11与该封装基座10接合后,会有以下的情况产生,如图2d所示的俯视图,我们可以清楚看出,倘若该透镜结构11为内切于该封装基座10四边的内切圆,则该透镜结构11无法将该封装基座10全部涵盖到(如图所示该封装基座的四个角露出于该封装基座10之外),因而浪费了该封装基座10的面积;另外一种情况如图2e所示的俯视图,为了能使该透镜结构11完全的将该封装基座10涵盖,因而加大了该透镜结构11的面积,但如此又会有部分的该透镜结构11超出该封装基座10外,而浪费了该透镜结构11的面积。上述两种情况皆会造成制作成本的提高。2a-2c, which are schematic diagrams showing the offset or inclination of the lens structure 11 after bonding with the package base 10. Referring to FIG. As shown in FIGS. 2a and 2b, when the lens structure 11 is bonded to the package base 10, as shown in FIG. 2a, the lens structure 11 cannot be accurately aligned with the center of the light-emitting surface 101 of the package structure 10. point (indicated by the triangle symbol), as shown in FIG. 2b, the lens structure 11 will generate unidirectional (X direction) or bidirectional (X direction and Y direction) relative to the light-emitting surface 101 of the packaging structure 10. linear offset. As shown in FIG. 2 c , during the bonding process, the bonding glue 13 is deformed due to uneven application of force, resulting in a deflection angle of the lens structure 11 relative to the light-emitting surface 101 of the package base 10 . The above-mentioned poor bonding between the lens structure 11 and the package base 10 will cause the relative positional deviation of the light emitting diode die 100 and the lens structure 11 to be too large, resulting in a decrease in luminous efficiency and a light pattern. change. In addition, after the lens structure 11 is bonded to the package base 10, the following situation will occur. As shown in the top view of FIG. 2d, we can clearly see that if the lens structure 11 is inscribed on the package base 10, the lens structure 11 cannot completely cover the package base 10 (the four corners of the package base are exposed outside the package base 10 as shown in the figure), thus wasting the The area of the package base 10; in another case, as shown in the top view of FIG. Part of the lens structure 11 protrudes from the package base 10 , and the area of the lens structure 11 is wasted. Both of the above situations will result in an increase in production cost.

而为了改善上述透镜结构与封装基座间相对位移所造成对准固定以及浪费制作成本的问题,因而开发出可以与许多的光学组件结合成形的一种微透镜光学系统(Micro lens optical system)。如图3a~图3e所示,先以光阻热回流法(Reflow process)制作球面透镜200(如图3a所示);随后将一高分子材料201浇铸(Cast)在图3a中的球面透镜上(如图3b所示);固化后得到一个高分子材料模具202(图3c);再以旋涂的方式,将制作微透镜阵列203的材料涂布在图3c中所得到的高分子材料模具202上(如图3d所示);最后再进行一脱膜程序后,便可得到具有弹性的微透镜阵列203。经由上述的微透镜阵列203制作程序说明后,我们可以清楚地看出,公知的微透镜阵列203是必须额外通过一系列铸膜成形工艺制作完成后,再将此微透镜阵列203的个别单颗微透镜结构与单个发光二极管的封装基座进行接合,形成如图1所示的封装架构,虽然此微透镜阵列203能有效改善透镜结构与封装基座间相对位移所造成的对准及固定的问题,但如此繁复的工艺势必也会造成制作成本的提高,因此,如何针对上述缺陷进行改进,为本发明的最主要的目的。In order to improve the problems of alignment fixation and waste of production cost caused by the relative displacement between the lens structure and the package base, a micro lens optical system (Micro lens optical system) that can be combined with many optical components has been developed. As shown in Figures 3a to 3e, the spherical lens 200 (as shown in Figure 3a) is first produced by the photoresist thermal reflow method (Reflow process); then a polymer material 201 is cast (Cast) on the spherical lens in Figure 3a (as shown in Figure 3b); obtain a polymer material mold 202 (Figure 3c) after curing; then in the manner of spin coating, the material coating of microlens array 203 is coated on the polymer material obtained in Figure 3c on the mold 202 (as shown in FIG. 3 d ); finally, after a film release procedure is performed, an elastic microlens array 203 can be obtained. After the above description of the production procedure of the microlens array 203, we can clearly see that the known microlens array 203 must be manufactured through a series of casting film forming processes, and then the individual single lenses of the microlens array 203 The microlens structure is bonded to the package base of a single light-emitting diode to form a package structure as shown in FIG. problem, but such a complicated process will inevitably lead to an increase in production cost, therefore, how to improve the above-mentioned defects is the main purpose of the present invention.

发明内容Contents of the invention

针对现有技术的缺陷,为本发明的目的在于提供一种光二极管封装结构,应用于一光二极管晶粒上,该封装结构包含:一基板,其具有一第一表面;一承载空间,其顶部开口位于该基板的该第一表面,其底部用以承载该光二极管晶粒;以及一光学材料层,其形成于该承载空间中且覆盖于该光二极管晶粒上并具有一微透镜阵列结构,其中该微透镜阵列结构位于该光二极管晶粒的上方,用以透射该光二极管晶粒所发出的光线,同时通过微透镜的外形以及阵列的排列方式,可以有效的提升出光效率及改变光型。In view of the defects of the prior art, the purpose of the present invention is to provide a photodiode packaging structure, which is applied to a photodiode crystal grain, and the packaging structure includes: a substrate, which has a first surface; a carrying space, which a top opening is located on the first surface of the substrate, and the bottom thereof is used to carry the photodiode die; and an optical material layer is formed in the carrying space and covers the photodiode die and has a microlens array structure, wherein the microlens array structure is located above the photodiode crystal grain, and is used to transmit the light emitted by the photodiode crystal grain. light type.

根据上述构想,本发明所述的光二极管封装结构,其中该基板为一(100)晶格方向、一(110)晶格方向或一(111)晶格方向的硅半导体基板。According to the above idea, in the photodiode packaging structure of the present invention, the substrate is a silicon semiconductor substrate with a (100) lattice direction, a (110) lattice direction or a (111) lattice direction.

根据上述构想,本发明所述的光二极管封装结构,其中该基板为一氧化铝或一氮化铝材料的陶瓷基板。According to the idea above, in the photodiode packaging structure of the present invention, the substrate is a ceramic substrate made of aluminum oxide or aluminum nitride.

根据上述构想,本发明所述的光二极管封装结构,其中该基板为以一铝金属或一铜金属所制成的一金属基板。According to the idea above, in the photodiode packaging structure of the present invention, the substrate is a metal substrate made of aluminum metal or copper metal.

根据上述构想,本发明所述的光二极管封装结构,其中该承载空间由多个斜面环绕而成,且所述多个斜面与该承载空间底部夹角小于90度。According to the above idea, in the photodiode packaging structure of the present invention, the carrying space is surrounded by a plurality of slopes, and the included angle between the multiple slopes and the bottom of the carrying space is less than 90 degrees.

根据上述构想,本发明所述的光二极管封装结构,其中该承载空间的形状为一锥型、一正立方型、一矩型、一半椭圆型或一半圆锥型。According to the idea above, in the photodiode packaging structure of the present invention, the shape of the carrying space is a cone, a cube, a rectangle, a semi-ellipse or a semi-cone.

根据上述构想,本发明所述的光二极管封装结构,还包含一导通孔,其底部开口位于该基板所具有的一第二表面,该导通孔的顶部连通于该承载空间的底部。According to the above idea, the photodiode packaging structure of the present invention further includes a via hole, the bottom opening of which is located on a second surface of the substrate, and the top of the via hole communicates with the bottom of the carrying space.

根据上述构想,本发明所述的光二极管封装结构,其中该光学材料层与该微透镜阵列结构为具有一定透光率的一热固型或一热塑型的光学胶体。According to the idea above, in the photodiode packaging structure of the present invention, the optical material layer and the microlens array structure are a thermosetting or thermoplastic optical colloid with a certain light transmittance.

根据上述构想,本发明所述的光二极管封装结构,其中该光学材料层为具有一定透光率的一热固型或一热塑型的光学胶体,而该微透镜阵列结构为一光敏材料、一热固型材料或一热塑型材料。According to the above idea, in the photodiode packaging structure of the present invention, the optical material layer is a thermosetting or thermoplastic optical colloid with a certain light transmittance, and the microlens array structure is a photosensitive material, A thermosetting material or a thermoplastic material.

根据上述构想,本发明所述的光二极管封装结构,其中该微透镜阵列结构通过一模仁压合于该光学材料层上或另外以一干模成形后贴合于该基板的该第一表面与该光学材料层上来完成。According to the above idea, in the photodiode packaging structure of the present invention, the microlens array structure is bonded on the optical material layer by a mold core or formed by a dry mold and bonded to the first surface of the substrate and The optical material is layered on top to finish.

根据上述构想,本发明所述的光二极管封装结构,其中该微透镜阵列结构由多个微透镜结构所构成,而该等微透镜结构可为圆弧弯曲向上的一半球形三维微结构或两轴向长度不等的一半椭圆形三维微结构。According to the above idea, in the photodiode packaging structure of the present invention, the microlens array structure is composed of a plurality of microlens structures, and the microlens structures can be arc-curved upward hemispherical three-dimensional microstructures or two-axis Half-elliptical three-dimensional microstructures with varying lengths.

根据上述构想,本发明所述的光二极管封装结构,其中所述多个微透镜结构可为圆弧弯曲向下的一半球形三维微结构或两轴向长度不等的一半椭圆形三维微结构。According to the idea above, in the photodiode packaging structure of the present invention, the plurality of microlens structures can be semi-spherical three-dimensional microstructures curved downwards or semi-elliptical three-dimensional microstructures with two axial lengths of different lengths.

根据上述构想,本发明所述的光二极管封装结构,其中所述多个微透镜结构可为一三面体锥型结构或一四面体锥型结构。According to the above idea, in the photodiode packaging structure of the present invention, the plurality of microlens structures can be a trihedral cone structure or a tetrahedron cone structure.

根据上述构想,本发明所述的光二极管封装结构,其中该微透镜阵列结构位于该基板的该第一表面上或位于该承载空间内。According to the idea above, in the photodiode packaging structure of the present invention, the microlens array structure is located on the first surface of the substrate or in the carrying space.

根据上述构想,本发明所述的光二极管封装结构,其所应用的该光二极管晶粒为一发光二极管或一激光二极管。According to the idea above, in the photodiode packaging structure of the present invention, the photodiode die used is a light emitting diode or a laser diode.

本发明的有益效果在于,既能有效改善透镜结构与封装基座间相对位移所造成的对准及固定的问题,也不至工艺繁复与成本提高。The beneficial effect of the present invention is that it can effectively improve the problems of alignment and fixation caused by the relative displacement between the lens structure and the packaging base, without complicating the process and increasing the cost.

附图说明Description of drawings

图1,其为公知的具有透镜结构的发光二极管封装结构示意图。FIG. 1 is a schematic diagram of a known LED package structure with a lens structure.

图2a~图2e,其为该透镜结构与该封装基座进行接合后产生偏移或倾斜以及造成封装基座面积浪费示意图。2a to 2e are schematic diagrams of the lens structure being bonded to the package base to cause offset or inclination and waste the area of the package base.

图3a~图3e,其为一微透镜阵列制作方法流程示意图。3a to 3e are schematic flow charts of a manufacturing method of a microlens array.

图4,其为本发明光二极管封装结构的第一较佳实施例示意图。FIG. 4 is a schematic diagram of the first preferred embodiment of the photodiode packaging structure of the present invention.

图5a~图5c,其为本发明在第一较佳实施例中所述的光二极管封装基座结构中所包含的微透镜阵列结构制作方法的流程示意图。FIGS. 5 a to 5 c are schematic flowcharts of the manufacturing method of the microlens array structure contained in the photodiode package base structure described in the first preferred embodiment of the present invention.

图6a~图6b,其为本发明光二极管封装结构的第二较佳实施例示意图。6a to 6b are schematic diagrams of the second preferred embodiment of the photodiode packaging structure of the present invention.

图7a~图7d,其为该微透镜阵列结构中所包含多个微透镜结构不同形状的实施例示意图。7a to 7d are schematic diagrams of embodiments of different shapes of a plurality of microlens structures included in the microlens array structure.

其中,附图标记说明如下:Wherein, the reference signs are explained as follows:

发光二极管封装结构1    封装基座10LED package structure 1 package base 10

透镜结构11             承载空间12Lens structure 11 Bearing space 12

黏合胶13               发光二极管晶粒100Adhesive 13 LED Die 100

出光面101Light-emitting surface 101

球面透镜200            高分子材料201Spherical lens 200 Polymer material 201

高分子材料模具202      微透镜阵列203Polymer material mold 202 microlens array 203

发光二极管晶粒200LED Die 200

光二极管封装结构3Photodiode Package Structure 3

基板30                 承载空间31Substrate 30 Bearing space 31

导通孔32、33           光学材料层34Via holes 32, 33 Optical material layer 34

微透镜阵列结构35       第一表面301Microlens array structure 35 first surface 301

第二表面302            斜面306Second surface 302 Inclined surface 306

微透镜模仁3016         光二极管晶粒300Microlens mold core 3016 photodiode grain 300

基板40                 承载空间41Substrate 40 Bearing space 41

导通孔42、43           光学材料层44Via holes 42, 43 Optical material layer 44

微透镜阵列结构45       第一表面401Microlens array structure 45 first surface 401

第二表面402            斜面406Second surface 402 Inclined surface 406

微透镜模仁4016         光二极管晶粒400Micro lens mold core 4016 photodiode grain 400

半椭圆形的微透镜结构50Semi-elliptical microlens structure 50

圆弧弯曲向下半圆形的微透镜结构6060 microlens structures with circular arcs and downward semicircles

圆弧弯曲向下半椭圆形的微透镜结构70Arc curved downward semi-elliptical microlens structure 70

锥形的微透镜结构80Tapered Microlens Structure 80

具体实施方式Detailed ways

请参见图4,其为本发明为改进现有光二极管封装结构产生的缺陷所开发出的一光二极管封装结构的第一较佳实施例示意图,而本发明所述的该封装结构应用于一发光二极管(LED)或一激光二极管(Laser Diode)的光二极管晶粒300的封装过程中。从图中我们可以清楚看出,本发明所述的光二极管封装结构3包含有具有一第一表面301与一第二表面302的一基板30、一承载空间31、一导通孔32、33、一光学材料层34以及一微透镜阵列结构35,其中该基板30为一(100)晶格方向、一(110)晶格方向或一(111)晶格方向的硅半导体基板,此类半导体基板可提供高导热性的散热,另外该基板30的材质也可以利用一氧化铝或一氮化铝材料所制成的陶瓷基板或是利用一铝金属、一铜金属所制成的一金属基板,同样也可以提供高导热性的散热;该承载空间31主要由多个斜面306环绕而成,其顶部开口位于该基板30的该第一表面301一侧,该承载空间31的底部主要用于承载该光二极管晶粒300;该导通孔32的底部开口位于该基板30的该第二表面302一侧,且该导通孔32、33的顶部连通于该承载空间31的底部,而本发明所述的光二极管封装结构最主要的技术手段便是该承载空间31中具有该光学材料层34,其覆盖于该光二极管晶粒300上,且该光学材料层34上连接有该微透镜阵列结构35,该微透镜阵列结构35位于该光二极管晶粒300的上方,主要用以透射该光二极管晶粒300所发出的光线,同时通过单一微透镜的外形以及阵列的排列方式,可以有效的提升出光效率及改变光型。以下再针对本发明所述的光二极管封装结构进行详细的描述。Please refer to FIG. 4, which is a schematic diagram of a first preferred embodiment of a photodiode packaging structure developed by the present invention to improve the defects produced by the existing photodiode packaging structure, and the packaging structure described in the present invention is applied to a During the packaging process of the photodiode die 300 of a light emitting diode (LED) or a laser diode (Laser Diode). We can clearly see from the figure that the photodiode package structure 3 of the present invention includes a substrate 30 having a first surface 301 and a second surface 302, a carrying space 31, and via holes 32, 33 , an optical material layer 34 and a microlens array structure 35, wherein the substrate 30 is a silicon semiconductor substrate with a (100) lattice direction, a (110) lattice direction or a (111) lattice direction, such semiconductor The substrate can provide heat dissipation with high thermal conductivity. In addition, the material of the substrate 30 can also be a ceramic substrate made of aluminum oxide or an aluminum nitride material, or a metal substrate made of an aluminum metal or a copper metal. , can also provide heat dissipation with high thermal conductivity; the carrying space 31 is mainly surrounded by a plurality of slopes 306, and its top opening is located on the side of the first surface 301 of the substrate 30, and the bottom of the carrying space 31 is mainly used for carrying the photodiode crystal grain 300; the bottom opening of the via hole 32 is located on the second surface 302 side of the substrate 30, and the top of the via hole 32, 33 is connected to the bottom of the carrying space 31, and this The most important technical means of the photodiode packaging structure described in the invention is that the carrying space 31 has the optical material layer 34 covering the photodiode die 300, and the optical material layer 34 is connected with the microlens The array structure 35, the microlens array structure 35 is located above the photodiode crystal grain 300, and is mainly used to transmit the light emitted by the photodiode crystal grain 300. At the same time, the shape of a single microlens and the arrangement of the array can effectively Improve the light efficiency and change the light type. The photodiode package structure described in the present invention will be described in detail below.

承上述的技术说明,通常位于该基板30的该第一表面301与该第二表面302上的该承载空间31与该导通孔32、33是经由对该基板30的该第一表面301与该第二表面302进行蚀刻的方式来完成,依照该基板30的晶格特性分别于该第一表面301与该第二表面302上形成底部与斜面306间的夹角小于90度的该承载空间31与该导通孔32、33,而由多个斜面306所环绕而成的该承载空间,其形状可为一锥型、一正立方型、一矩型、一半椭圆型或一半圆锥型。而该光学材料层34为具有一定透光率的一热固型(如:硅胶、环氧树脂)或一热塑型(如:高玻璃转移温度的聚酯系...)的光学胶体,该微透镜阵列结构35为一光敏材料(如:光阻)、一热固型材料或一热塑型材料。According to the above technical description, usually the carrying space 31 and the via holes 32, 33 located on the first surface 301 and the second surface 302 of the substrate 30 are connected via the first surface 301 and the second surface 302 of the substrate 30. The second surface 302 is etched to complete, according to the lattice characteristics of the substrate 30, the carrying space is formed on the first surface 301 and the second surface 302, and the angle between the bottom and the slope 306 is less than 90 degrees. 31, the via holes 32, 33, and the bearing space surrounded by a plurality of slopes 306 can be in the shape of a cone, a cube, a rectangle, a semi-ellipse or a semi-cone. The optical material layer 34 is a thermosetting (such as: silica gel, epoxy resin) or a thermoplastic (such as: polyester with high glass transition temperature...) optical colloid with a certain light transmittance, The microlens array structure 35 is a photosensitive material (such as: photoresist), a thermosetting material or a thermoplastic material.

请参见图5a~图5(c),其为本发明在第一较佳实施例中所述的光二极管封装基座结构3中所包含的微透镜阵列结构35制作方法的流程示意图。从图中我们可以清楚看出,该微透镜结构35主要是通过一模仁压合成形工艺来完成,其步骤流程从图5a~图5c中可以清楚看出,首先如图5a所示,我们在原先的该光学材料层34上涂布另一光学材料层350(此光学材料层350我们可以利用硅胶来制成);如图5b所示,将一微透镜模仁3016压合于光学材料层350上;如图5c所示,移除该微透镜模仁3016,进而于光学材料层350上形成该微透镜阵列结构35。除此之外,该微透镜阵列结构35也可以另外以干模的形式加以成形后直接贴合于该基板30的该第一表面301上。Please refer to FIG. 5 a to FIG. 5 ( c ), which are schematic flowcharts of the manufacturing method of the microlens array structure 35 contained in the photodiode package base structure 3 described in the first preferred embodiment of the present invention. We can clearly see from the figure that the microlens structure 35 is mainly completed through a molding process, and its step flow can be clearly seen from Figures 5a to 5c. First, as shown in Figure 5a, we Coat another optical material layer 350 on the original optical material layer 34 (this optical material layer 350 can be made by using silica gel); as shown in FIG. On the layer 350; as shown in FIG. In addition, the microlens array structure 35 can also be formed in the form of a dry mold and then directly attached to the first surface 301 of the substrate 30 .

请参见图6a与图6b,其为本发明为改进公知光二极管封装结构产生的缺陷所开发出的一光二极管封装结构的第二较佳实施例示意图。从图6a中我们可以清楚看出,本发明所述的光二极管封装结构4包含有具有一第一表面401与一第二表面402的一基板40、一承载空间41、一导通孔42、43、一光学材料层44,在本实施例中所述的光二极管封装结构4与第一较佳实施例不同的地方在于,我们仅在该承载空间41中形成该光学材料层44,不用再另外于该光学材料层44上形成另一光学材料层来制作微透镜阵列结构,也就是在本实施例中的微透镜阵列结构45是与该光学材料层44一体成形的,其制作的方法如图6b所示,将一微透镜模仁4016直接压合于尚未凝固的该光学材料层44上,然后在移除该微透镜模仁4016后便可于该光学材料层44上形成如图6a中所示的微透镜阵列结构45。而本较佳实施例有部分技术手段与第一较佳实施例相同,故在此就不予赘述。Please refer to FIG. 6 a and FIG. 6 b , which are schematic diagrams of a second preferred embodiment of a photodiode packaging structure developed by the present invention to improve the defects of the known photodiode packaging structure. From FIG. 6a we can clearly see that the photodiode package structure 4 of the present invention includes a substrate 40 having a first surface 401 and a second surface 402, a carrying space 41, a via hole 42, 43. An optical material layer 44. The difference between the photodiode packaging structure 4 described in this embodiment and the first preferred embodiment is that we only form the optical material layer 44 in the carrying space 41, and no further In addition, another optical material layer is formed on the optical material layer 44 to make a microlens array structure, that is, the microlens array structure 45 in this embodiment is integrally formed with the optical material layer 44, and the method for making it is as follows As shown in FIG. 6b, a microlens mold core 4016 is directly pressed onto the uncured optical material layer 44, and then the microlens mold core 4016 can be formed on the optical material layer 44 as shown in FIG. 6a. The microlens array structure shown in 45. However, some technical means of this preferred embodiment are the same as those of the first preferred embodiment, so details will not be repeated here.

上述在第一较佳实施例与第二较佳实施例中所述的该微透镜模仁3016、4016我们主要以一体积膨胀法、一热熔式、一表面张力或一热挤压法进行制作,再通过一翻模工艺来完成该微透镜模仁3016、4016。The microlens mold cores 3016, 4016 described above in the first preferred embodiment and the second preferred embodiment are mainly carried out by a volume expansion method, a hot melt method, a surface tension method or a hot extrusion method. production, and then complete the microlens mold cores 3016, 4016 through a molding process.

另外,在上述不同实施方式的制作流程步骤中,我们可以清楚看出,该光学材料层34、44的厚度决定了该微透镜阵列结构35、45的形成位置,例如在图4中,该微透镜阵列结构35的形成位置位于该基板30的该第一表面301上,而在图6a中,该微透镜阵列结构45的形成位置则是位于该承载空间31中,然而,上述的实施方式仅为本发明所提的较佳实施例,该光学材料层34、44也可沿着该光二极管晶粒300、400的四周涂布均匀厚度即可,并不一定需要将该光学材料层34、44填满该承载空间31、41。In addition, in the manufacturing process steps of the above-mentioned different embodiments, we can clearly see that the thickness of the optical material layer 34, 44 determines the formation position of the microlens array structure 35, 45, for example, in FIG. 4, the microlens array structure The forming position of the lens array structure 35 is located on the first surface 301 of the substrate 30, and in FIG. 6a, the forming position of the microlens array structure 45 is located in the carrying space 31. As a preferred embodiment of the present invention, the optical material layer 34, 44 can also be coated with a uniform thickness along the periphery of the photodiode die 300, 400, and the optical material layer 34, 44 does not necessarily need to be coated with a uniform thickness. 44 to fill up the bearing space 31,41.

再请参见图7a~图7d,其为该微透镜阵列结构35、45不同形状的实施例示意图。在上述的第一较佳实施例与第二较佳实施例的说明中,该微透镜阵列结构35、45中所包含多个微透镜结构,我们均以一半球形三维结构为例来进行说明,然而,本发明所述的微透镜阵列结构所包含的所述多个微透镜结构除了可以该半球形三维微结构的外,还可以如图7a所示的两轴向长度不等的半椭圆形三维微结构50、如图7b所示的圆弧弯曲向下的半球形三维微结构60、如图7c所示的圆弧弯曲向下的两轴向长度不等的半椭圆形三维微结构70、如图7d所示的一三面体或四面体的锥型结构80。Please refer to FIG. 7 a to FIG. 7 d , which are schematic diagrams of embodiments of different shapes of the microlens array structures 35 , 45 . In the description of the above-mentioned first preferred embodiment and the second preferred embodiment, the multiple micro-lens structures included in the micro-lens array structures 35, 45 are all described by taking a hemispherical three-dimensional structure as an example, However, in addition to the hemispherical three-dimensional microstructure, the plurality of microlens structures included in the microlens array structure of the present invention can also be semi-elliptical with different axial lengths as shown in Figure 7a Three-dimensional microstructure 50, a hemispherical three-dimensional microstructure 60 with a curved downward arc as shown in FIG. . A trihedral or tetrahedral pyramidal structure 80 as shown in FIG. 7d.

综合以上不同的实施例说明,我们可以清楚了解到,通过本发明所述的技术手段所完成的光二极管结构,确实解决了公知封装结构上所产生的缺陷,进而实现本发明的最主要的目的。本领域技术人员应当意识到在不脱离本发明所附的权利要求所揭示的本发明的范围和精神的情况下所作的更动与润饰,均属本发明的权利要求的保护范围之内。Based on the above descriptions of different embodiments, we can clearly understand that the photodiode structure completed by the technical means of the present invention does solve the defects of the known packaging structure, and then realize the main purpose of the present invention . Those skilled in the art should realize that changes and modifications made without departing from the scope and spirit of the present invention disclosed by the appended claims of the present invention are within the protection scope of the claims of the present invention.

Claims (10)

1.一种光二极管封装结构,应用于一光二极管晶粒上,该封装结构包含:1. A photodiode package structure applied to a photodiode crystal grain, the package structure comprising: 一基板,其具有一第一表面;a substrate having a first surface; 一承载空间,其顶部开口位于该基板的的该第一表面,其底部用以承载该光二极管晶粒;以及a carrying space, the top opening of which is located on the first surface of the substrate, and the bottom of which is used to carry the photodiode die; and 一光学材料层,其形成于该承载空间中且覆盖于该光二极管晶粒上并具有一微透镜阵列结构,其中该微透镜阵列结构位于该光二极管晶粒的的上方,用以透射该光二极管晶粒所发出的的光线及定义光型。An optical material layer, which is formed in the carrying space and covers the photodiode crystal grain and has a microlens array structure, wherein the microlens array structure is located above the photodiode crystal grain for transmitting the light The light emitted by the diode die and the defined light pattern. 2.如权利要求1所述的的光二极管封装结构,其特征在于,该基板为一(100)晶格方向、一(110)晶格方向或一(111)晶格方向的的硅半导体基板或以一氧化铝或一氮化铝材料的的陶瓷基板或以一铝金属或一铜金属所制成的的一金属基板。2. The photodiode packaging structure according to claim 1, wherein the substrate is a silicon semiconductor substrate with a (100) lattice direction, a (110) lattice direction or a (111) lattice direction Or a ceramic substrate made of an aluminum oxide or an aluminum nitride material, or a metal substrate made of an aluminum metal or a copper metal. 3.如权利要求1所述的的光二极管封装结构,其特征在于,该承载空间由多个斜面环绕而成,且所述多个斜面与该承载空间底部夹角小于90度,且该承载空间的的形状为一锥型、一正立方型、一矩型、一半椭圆型或一半圆锥型。3. The photodiode packaging structure according to claim 1, wherein the carrying space is surrounded by a plurality of slopes, and the angle between the multiple slopes and the bottom of the carrying space is less than 90 degrees, and the carrying space The shape of the space is a cone, a regular cube, a rectangle, a half ellipse or a half cone. 4.如权利要求1所述的的光二极管封装结构,其特征在于,该光二极管封装结构还包含一导通孔,其底部开口位于该基板所具有的的一第二表面,该导通孔的的顶部连通于该承载空间的的底部。4. The photodiode packaging structure according to claim 1, wherein the photodiode packaging structure further comprises a via hole, the bottom opening of which is located on a second surface of the substrate, the via hole The top of the bearing space communicates with the bottom of the carrying space. 5.如权利要求1所述的的光二极管封装结构,其特征在于,该光学材料层与该微透镜阵列结构为具有一定透光率的的一热固型或一热塑型的的光学胶体。5. The photodiode packaging structure according to claim 1, wherein the optical material layer and the microlens array structure are a thermosetting or thermoplastic optical colloid with a certain light transmittance . 6.如权利要求1所述的的光二极管封装结构,其特征在于,该光学材料层为具有一定透光率的的一热固型或一热塑型的的光学胶体,而该微透镜阵列结构为一光敏材料、一热固型材料或一热塑型材料。6. The photodiode packaging structure according to claim 1, wherein the optical material layer is a thermosetting or thermoplastic optical colloid with a certain light transmittance, and the microlens array The structure is a photosensitive material, a thermosetting material or a thermoplastic material. 7.如权利要求1所述的的光二极管封装基座结构,其特征在于,该微透镜阵列结构通过一模仁压合于该光学材料层上或另外以一干模成形后贴合于该基板的的该第一表面与该光学材料层上来制成。7. The photodiode package base structure according to claim 1, wherein the microlens array structure is bonded to the optical material layer by a mold core or formed by a dry mold and bonded to the substrate The first surface is made with the layer of optical material. 8.如权利要求1所述的的光二极管封装基座结构,其特征在于,该微透镜阵列结构由多个微透镜结构所构成,而所述多个微透镜结构为圆弧弯曲向上的的一半球形三维微结构或圆弧弯曲向上的的两轴向长度不等的的一半椭圆形三维微结构或为圆弧弯曲向下的的一半球形三维微结构或圆弧弯曲向下的的两轴向长度不等的的一半椭圆形三维微结构或为一三面体锥型微结构或一四面体锥型微结构。8. The photodiode packaging base structure according to claim 1, wherein the microlens array structure is composed of a plurality of microlens structures, and the plurality of microlens structures are arc-curved upward Hemispherical three-dimensional microstructure or arc curved upward two-axis semi-elliptical three-dimensional microstructure with different lengths or arc curved downward hemispherical three-dimensional microstructure or arc curved downward two axes The semi-elliptical three-dimensional microstructure with different lengths is either a trihedral cone microstructure or a tetrahedron cone microstructure. 9.如权利要求1所述的的光二极管封装结构,其特征在于,该微透镜阵列结构位于该基板的的该第一表面上或位于该承载空间内。9 . The photodiode package structure according to claim 1 , wherein the microlens array structure is located on the first surface of the substrate or in the carrying space. 10.如权利要求1所述的的光二极管封装结构,其特征在于,其所应用的的该光二极管晶粒为一发光二极管或一激光二极管。10 . The photodiode package structure according to claim 1 , wherein the photodiode die used is a light emitting diode or a laser diode. 11 .
CN201010130279A 2010-03-05 2010-03-05 Light-emitting diode packaging structure Pending CN101814572A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201010130279A CN101814572A (en) 2010-03-05 2010-03-05 Light-emitting diode packaging structure

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201010130279A CN101814572A (en) 2010-03-05 2010-03-05 Light-emitting diode packaging structure

Publications (1)

Publication Number Publication Date
CN101814572A true CN101814572A (en) 2010-08-25

Family

ID=42621749

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201010130279A Pending CN101814572A (en) 2010-03-05 2010-03-05 Light-emitting diode packaging structure

Country Status (1)

Country Link
CN (1) CN101814572A (en)

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102487063A (en) * 2010-12-03 2012-06-06 刘胜 LED (Light-Emitting Diode) array packaging structure with microstructure silica-gel lens
CN103474423A (en) * 2013-03-28 2013-12-25 深圳信息职业技术学院 High luminous efficiency LED integrated light source and LED lamp
CN103855270A (en) * 2012-12-07 2014-06-11 展晶科技(深圳)有限公司 Light-emitting device and manufacturing method thereof
CN104465964A (en) * 2014-11-14 2015-03-25 司红康 LED packaging structure
CN105098038A (en) * 2014-05-22 2015-11-25 台湾半导体照明股份有限公司 Wafer-level packaging method and wafer-level packaging structure
CN107482105A (en) * 2016-06-07 2017-12-15 王圣然 A light-emitting diode with a microlens array package
CN111403579A (en) * 2020-02-29 2020-07-10 华中科技大学 High-power white light LED with light-emitting surface of array lens and preparation method thereof
CN111463652A (en) * 2019-01-22 2020-07-28 隆达电子股份有限公司 light-emitting device
CN115088150A (en) * 2020-02-19 2022-09-20 索尼半导体解决方案公司 Light emitting device and method for manufacturing the same

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005064111A (en) * 2003-08-08 2005-03-10 Stanley Electric Co Ltd High brightness light emitting diode
CN1851945A (en) * 2006-04-27 2006-10-25 矽畿科技股份有限公司 Packing substrate structure of optical diode and preparing method
US20060261357A1 (en) * 2005-05-18 2006-11-23 Ching-Fu Tsou Array-type modularized light-emitting diode structure and a method for packaging the structure
JP2007123437A (en) * 2005-10-26 2007-05-17 Toyoda Gosei Co Ltd Phosphor plate and light emitting device with same
US20080111141A1 (en) * 2006-11-09 2008-05-15 Intematix Corporation Light emitting diode assembly and method of fabrication
JP2009194253A (en) * 2008-02-15 2009-08-27 Fuji Xerox Co Ltd Method of manufacturing light-emitting element array chip, micro-lens molding die, light-emitting element head, and image forming apparatus

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005064111A (en) * 2003-08-08 2005-03-10 Stanley Electric Co Ltd High brightness light emitting diode
US20060261357A1 (en) * 2005-05-18 2006-11-23 Ching-Fu Tsou Array-type modularized light-emitting diode structure and a method for packaging the structure
JP2007123437A (en) * 2005-10-26 2007-05-17 Toyoda Gosei Co Ltd Phosphor plate and light emitting device with same
CN1851945A (en) * 2006-04-27 2006-10-25 矽畿科技股份有限公司 Packing substrate structure of optical diode and preparing method
US20080111141A1 (en) * 2006-11-09 2008-05-15 Intematix Corporation Light emitting diode assembly and method of fabrication
JP2009194253A (en) * 2008-02-15 2009-08-27 Fuji Xerox Co Ltd Method of manufacturing light-emitting element array chip, micro-lens molding die, light-emitting element head, and image forming apparatus

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102487063A (en) * 2010-12-03 2012-06-06 刘胜 LED (Light-Emitting Diode) array packaging structure with microstructure silica-gel lens
CN103855270A (en) * 2012-12-07 2014-06-11 展晶科技(深圳)有限公司 Light-emitting device and manufacturing method thereof
CN103474423A (en) * 2013-03-28 2013-12-25 深圳信息职业技术学院 High luminous efficiency LED integrated light source and LED lamp
CN105098038A (en) * 2014-05-22 2015-11-25 台湾半导体照明股份有限公司 Wafer-level packaging method and wafer-level packaging structure
CN104465964A (en) * 2014-11-14 2015-03-25 司红康 LED packaging structure
CN104465964B (en) * 2014-11-14 2017-01-25 安徽康力节能电器科技有限公司 LED packaging structure
CN107482105A (en) * 2016-06-07 2017-12-15 王圣然 A light-emitting diode with a microlens array package
CN111463652A (en) * 2019-01-22 2020-07-28 隆达电子股份有限公司 light-emitting device
CN115088150A (en) * 2020-02-19 2022-09-20 索尼半导体解决方案公司 Light emitting device and method for manufacturing the same
CN111403579A (en) * 2020-02-29 2020-07-10 华中科技大学 High-power white light LED with light-emitting surface of array lens and preparation method thereof

Similar Documents

Publication Publication Date Title
CN101814572A (en) Light-emitting diode packaging structure
CN102800797B (en) Batwing led with remote phosphor configuration
JP6646593B2 (en) LED lighting unit
CN101222010B (en) Photoelectric component packaging structure and packaging method
US8564004B2 (en) Complex primary optics with intermediate elements
TWI550904B (en) Semiconductor emitter manufacturing method and semiconductor structure
US20090273005A1 (en) Opto-electronic package structure having silicon-substrate and method of forming the same
CN102468411A (en) Batwing beam based led and backlight module using the same
CN101278415A (en) Manufacturing method of light emitting diode
US8624280B2 (en) Light emitting device package and method for fabricating the same
WO2012012974A1 (en) Led packaging structure and packaging method thereof
CN101740599A (en) Light emitting diode device and manufacturing method thereof
CN113725346A (en) Mini LED backlight source, backlight module and manufacturing method thereof
CN204391150U (en) Improved LED packaging structure
CN101685783B (en) Light-emitting diode chip packaging structure and manufacturing method thereof
Chu et al. A silicon-based LED packaging substrate with an island structure for phosphor encapsulation shaping
KR101039974B1 (en) Light emitting device, light emitting device manufacturing method and light emitting device package
JP2019096871A (en) Chip scale packaging light emitting element with recessed face and method of manufacturing the same
CN105845790B (en) A kind of packaging method of flip LED chips
JP2004343149A (en) Light emitting element and method of fabricating the same
KR20160059450A (en) Molded substrate, package structure, and method of manufacture the same
TWI423483B (en) Optical diode package structure
CN109659418A (en) LED upside-down mounting integration packaging mould group
CN201887084U (en) Light-emitting diode packaging structure
Liou et al. Compact dual-LED packaging with a 3-D free-form lens for uniform rectangular illumination

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
C12 Rejection of a patent application after its publication
RJ01 Rejection of invention patent application after publication

Application publication date: 20100825