CN113725346A - Mini LED backlight source, backlight module and manufacturing method thereof - Google Patents
Mini LED backlight source, backlight module and manufacturing method thereof Download PDFInfo
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- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
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- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
- G02F1/1336—Illuminating devices
- G02F1/133602—Direct backlight
- G02F1/133603—Direct backlight with LEDs
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
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- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
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Abstract
本发明提供一种Mini LED背光源，包括：至少一基板，所述基板的表面设有若干个焊接区，所述焊接区以外的部分设有反光层；至少一倒装LED芯片，所述倒装LED芯片的底部设有第一电极与第二电极；所述倒装LED芯片设于所述基板的焊接区上；若干个用于连接倒装LED芯片的电极与基板焊接区的金属连接层，设于所述基板与所述倒装LED芯片之间；封装层，覆盖LED倒装芯片、基板的焊接区、金属连接层，以及位于所述倒装LED芯片周围的部分反光层；至少一IC驱动及至少一元器件；与封装层结合的反光层表面具有微结构。本发明还提供一种Mini LED背光模组、一种Mini LED背光源的制备方法。LED器件通过光线的折射增加LED侧面的出光，增加了光源的发光角度，提高发光效果。
The present invention provides a Mini LED backlight source, comprising: at least one substrate, the surface of the substrate is provided with a plurality of welding areas, and the part outside the welding areas is provided with a reflective layer; at least one flip-chip LED chip, the inverted The bottom of the LED chip is provided with a first electrode and a second electrode; the flip-chip LED chip is arranged on the bonding area of the substrate; a plurality of metal connection layers used to connect the electrodes of the flip-chip LED chip and the bonding area of the substrate , located between the substrate and the flip-chip LED chip; the packaging layer covers the LED flip-chip, the bonding area of the substrate, the metal connection layer, and a part of the reflective layer around the flip-chip LED chip; at least one IC driver and at least one component; the surface of the reflective layer combined with the encapsulation layer has a microstructure. The invention also provides a Mini LED backlight module and a preparation method of the Mini LED backlight source. The LED device increases the light output from the side of the LED through the refraction of the light, increases the luminous angle of the light source, and improves the luminous effect.
Description
Technical Field
The invention belongs to the technical field of LED display, and particularly relates to a Mini LED backlight source, a Mini LED backlight module and a manufacturing method thereof.
Background
The dynamic dimming technology of the LED backlight source has high contrast and excellent display effect, and is gradually a new favorite in the market of LED related products. Dynamic dimming requires multiple zones to control multiple light sources, thereby causing a sharp increase in product cost, making the terminal prohibitively expensive. By increasing the light emitting angle of a single backlight source, the number of LEDs can be reduced, so that the cost of the terminal can be greatly reduced.
Mini LED refers to a new technology of backlight source with chip size of hundreds of microns. COB (chip On board) is a structure of the Mini LED, and the COB Mini LED has the advantages of high contrast, high brightness and the like, and thus becomes a hot spot of current research. The structure through the packaging layer can increase the luminous angle of the LED of the point light source, but COB Mini LED hardly guarantees the consistency of the structure because of its many, and the size is little, and finally influences the module effect greatly, and how to guarantee the consistency of COB Mini LED packaging layer structure is the problem that needs to be solved at present.
Disclosure of Invention
In order to overcome the technical defects, the invention provides the Mini LED backlight source, the LED device increases the light emitting of the side surface of the LED through the refraction of light, the light emitting angle of the light source is increased, and the light emitting effect is improved.
The second objective of the present invention is to provide a Mini LED backlight module.
The third purpose of the invention is to provide a preparation method of the MiniLED backlight source.
In order to solve the problems, the invention is realized according to the following technical scheme:
a Mini LED backlight, comprising: the surface of the substrate is provided with a plurality of welding areas, and the part outside the welding areas is provided with a reflecting layer; the LED flip chip comprises at least one LED flip chip, wherein the bottom of the LED flip chip is provided with a first electrode and a second electrode; the flip LED chip is arranged on a welding area of the substrate; the metal connecting layers are used for connecting electrodes of the inverted LED chip and a substrate welding area and are arranged between the substrate and the inverted LED chip; the packaging layer covers the LED flip chip, the welding area of the substrate, the metal connecting layer and a part of reflecting layer positioned around the LED flip chip; at least one IC driver and at least one component device; the surface of the reflecting layer combined with the packaging layer is provided with a microstructure.
Preferably, the size of the microstructures on the surface of the light reflecting layer combined with the encapsulation layer is less than 50 um.
Preferably, the material of the light reflecting layer combined with the encapsulation layer is formed by mixing one or more of silicon rubber, silicon resin and epoxy resin with filling particles.
Preferably, the projection views formed by the side faces of the encapsulation layer in different directions are all elliptical.
Preferably, the ellipse satisfies X2/a2+Y2/b21(a > b > 0), where a is 1/2 of the width of the encapsulation layer and b is the height of the encapsulation layer.
Preferably, the ratio of b/2a ranges from 0.05 to 0.5;
preferably, the material of the encapsulation layer is composed of one or more of silicone rubber, silicone resin and epoxy resin.
A MiniLED backlight module comprising the Mini LED backlight of claims 1-7, further comprising a diffuser plate, an optical film.
A preparation method of a MiniLED backlight source comprises the following steps: covering a reflective layer on the surface of the substrate, and then curing the reflective layer; coating a metal connecting layer on a welding area of the chip; transferring the chip to the upper part of the substrate, and welding the chip and the substrate by heating; coating a metal connecting layer on a welding area of the IC driver and the component; transferring the IC drive and component chip onto a substrate, and welding the IC drive and component chip with the substrate by heating; and coating an encapsulation layer on the substrate welded with the chip and then curing.
A preparation method of a MiniLED backlight source is characterized by comprising the following steps: covering a reflective layer on the surface of the substrate, and then curing the reflective layer; coating a metal connecting layer on a welding area of the IC driver and the component; transferring the IC drive and the component to a substrate, and welding the IC drive and the component to the substrate by heating; coating a metal connecting layer on a welding area of the chip; transferring the chip to the upper part of the substrate, and welding the chip and the substrate by heating; and coating an encapsulation layer on the substrate welded with the chip and then curing.
Compared with the prior art, the invention has the beneficial effects that:
the packaging layer is the light refraction layer, the cladding of light refraction layer is on the LED chip, when playing the guard action to the LED chip, convex protective layer on the light refraction layer can refract light, make the luminous angle of LED device not present lambertian distribution, realize increasing luminous angle's effect, the outer effect of playing the protection LED chip of protection, light refraction layer, reflection light of protection, change the spatial distribution of LED device, be favorable to improving the homogeneity of LED module. Meanwhile, the surface microstructure of the reflecting layer combined with the packaging layer can prevent the molding consistency of the packaging layer on the substrate.
Drawings
Embodiments of the invention are described in further detail below with reference to the attached drawing figures, wherein:
FIG. 1 is a side view of a Mini LED backlight of example 1;
FIG. 2 is a side view of a Mini LED backlight of example 2;
FIG. 3 is a schematic view of increasing the light emitting angle of the convex protective layer in example 1;
FIG. 4 is a side view of an exemplary MiniLED module;
fig. 5 is a layout diagram of MiniLED chips in the example.
Description of the labeling: 100. a substrate; 101. a light-reflecting layer; 1011. a microstructure; 102/1021 a welding area; 103/1031, metal connection layer; 104. flip-chip LED chip; 105. a packaging layer; 106. IC; 107. a component; 108. a chip reflective layer; 201. a diffusion plate; 202. 203 an optical film.
Detailed Description
The preferred embodiments of the present invention will be described in conjunction with the accompanying drawings, and it will be understood that they are described herein for the purpose of illustration and explanation and not limitation.
Example 1
The embodiment discloses a Mini LED backlight source; the method comprises the following steps:
the substrate 100, in this example, the substrate is made of FR4 board, the surface of the substrate has a plurality of bonding pads (e.g. 102/1021), and the substrate is covered by a reflective layer 101, in this embodiment, the reflective layer is made of silicone resin mixed with TiO 2.
The surface of the light-reflecting layer on the side remote from the substrate, i.e. the side of the light-reflecting layer that is bonded to the encapsulation layer, has a microstructure of 50 um.
The flip-chip LED chip 104 of this embodiment has a size of 200um × 400um, a dominant wavelength of 450nm, and a first electrode and a second electrode are disposed at the bottom of each flip-chip LED chip. The flip LED chip is arranged above the welding area of the substrate.
A plurality of metal connecting layers 103/1031, for the SnAgCu structural alloy, set up between base plate and flip-chip LED chip for connect the bonding pad of flip-chip LED chip electrode and base plate, in this embodiment, the chip is square arranging (fig. 5 left) on the base plate.
And the packaging layer 105 covers the LED flip chip, the welding area of the substrate, the metal connecting layer and a part of the reflecting layer positioned around the LED flip chip. The projection views formed by the side surfaces of the encapsulation layers in different directions are all oval, and the oval satisfies that X2/a2+ Y2/b2 is 1(a > b > 0), wherein a is 1/2 of the width of the encapsulation layer, b is the height of the encapsulation layer, in the embodiment, a is 1.25mm, b is 0.7mm, and b/2a is 0.28; IC driver 106 and a component 107.
The material of the encapsulation layer is composed of one or more of silicone rubber, silicone resin, and epoxy resin, and in this embodiment, the material of the encapsulation layer is silicone resin.
The preparation method of the Mini backlight source of the embodiment comprises the following steps: covering a reflective layer on the surface of the substrate, and then curing the reflective layer; coating a metal connecting layer on a welding area of the chip; transferring the chip to the upper part of the substrate, and welding the chip and the substrate by heating; coating a metal connecting layer on a welding area of the IC driver and the component; transferring the IC drive and component chip onto a substrate, and welding the IC drive and component chip with the substrate by heating; coating a packaging layer on the substrate welded with the chip, and then curing;
the MiniLED backlight module of this embodiment, including the Mini LED backlight of claims 1 to 9, further including a diffuser 201, a QD film 202, and a light-enhancing diffusion composite film 203.
Example 2
The embodiment discloses a Mini LED backlight source, which is different from embodiment 1 in that a substrate is made of a BT board, two reflective layers are provided, the reflective layer in contact with the substrate is an epoxy resin reflective layer, a second reflective layer covers the surface of the epoxy resin reflective layer, the second reflective layer is a silicon rubber reflective layer, a 30um microstructure is provided on the surface of one side, away from the substrate, of the second reflective layer, the size of a chip in the embodiment is 100 × 200um, a reflective layer structure 108 covers the light emitting surface of the chip, and the arrangement of the chips on the substrate is polygonal (right in fig. 5). In the embodiment, a is 0.1mm, b is 0.01mm, and b/2a is 0.05; in this embodiment, the material of the encapsulation layer is silicon rubber.
The preparation method of the Mini LED backlight source in this embodiment includes: covering a reflective layer on the surface of the substrate, and then curing the reflective layer; coating a metal connecting layer on a welding area of the IC driver and the component; transferring the IC drive and the component onto a substrate, and welding the IC drive and the component with the substrate by heating; coating a metal connecting layer on a welding area of the chip; transferring the chip to the upper part of the substrate, and welding the chip and the substrate by heating; coating a packaging layer on the substrate welded with the chip, and then curing;
example 3
This example discloses a Mini LED backlight, which is different from example 1 in that, in this example, the material of the encapsulation layer is epoxy resin, and the encapsulation layer further contains nanoparticles, in this example, the nanoparticles are SiO2, a is 0.5mm, b is 0.5mm, and b/2a is 0.5.
Example 4
The embodiment discloses a Mini LED backlight source, which is different from embodiment 1 in that in this embodiment, a material of a package layer is a mixture of epoxy resin and silicone resin, the package layer further contains nanoparticles, the nanoparticles in this embodiment are ZrO2, the package layer in this embodiment further includes phosphor, in this embodiment, the phosphor is nitride green powder, K2SiF 6: and Mn.
The above description is only a preferred embodiment of the present invention, and is not intended to limit the present invention in any way, so that any modification, equivalent change and modification made to the above embodiment according to the technical spirit of the present invention are within the scope of the technical solution of the present invention.
Claims (10)
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN114460779A (en) * | 2022-03-03 | 2022-05-10 | 深圳创维－Rgb电子有限公司 | LED lamp panel, backlight module, display device and LED lamp panel manufacturing method |
| TWI802155B (en) * | 2021-12-17 | 2023-05-11 | 友達光電股份有限公司 | Light source module |
| CN117008377A (en) * | 2023-10-08 | 2023-11-07 | 合肥泰沃达智能装备有限公司 | Direct type backlight source with zero light mixing distance and display equipment using direct type backlight source |
| WO2024169703A1 (en) * | 2023-02-15 | 2024-08-22 | 惠州市聚飞光电有限公司 | Light-emitting apparatus and manufacturing method therefor |
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