CN101814554A - Structural design method of film solar cell - Google Patents
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- 238000000034 method Methods 0.000 title claims abstract description 9
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- 229910004613 CdTe Inorganic materials 0.000 claims abstract description 15
- 239000000758 substrate Substances 0.000 claims abstract description 15
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 13
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 11
- 229910021417 amorphous silicon Inorganic materials 0.000 claims abstract description 10
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- 238000006243 chemical reaction Methods 0.000 description 11
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- 238000005229 chemical vapour deposition Methods 0.000 description 3
- UIPVMGDJUWUZEI-UHFFFAOYSA-N copper;selanylideneindium Chemical compound [Cu].[In]=[Se] UIPVMGDJUWUZEI-UHFFFAOYSA-N 0.000 description 3
- 238000011161 development Methods 0.000 description 3
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 3
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- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 1
- 229910003902 SiCl 4 Inorganic materials 0.000 description 1
- 229910052793 cadmium Inorganic materials 0.000 description 1
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 description 1
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- SLLGVCUQYRMELA-UHFFFAOYSA-N chlorosilicon Chemical compound Cl[Si] SLLGVCUQYRMELA-UHFFFAOYSA-N 0.000 description 1
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- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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Abstract
本发明涉及一种薄膜太阳能电池的结构设计方法，包括微晶、非晶硅薄膜太阳能电池，CdTe/CdS，CIGS薄膜太阳能电池的结构设计，属于太阳能电池器件制备领域。该发明采用铝箔作为薄膜太阳能电池的背电极和基片，前表电极采用透明导电薄膜AZO(ZnO:Al)或者FTO(SnO2:F)，表层采用透明树脂封装，不改变目前工业生产的中间光伏层的结构，从而不需要改变目前生产的工艺和设备，不需要升级改造既可实现工业化生产。本发明主要解决目前工业生产的薄膜太阳能电池成本高，不能弯曲，运输成本高，易碎等问题。通过改变背电极、前表电极及封装材料来解决当前工业生产薄膜太阳能电池的所遇到的瓶颈。
The invention relates to a structural design method of thin-film solar cells, including the structural design of microcrystalline and amorphous silicon thin-film solar cells, CdTe/CdS and CIGS thin-film solar cells, and belongs to the field of solar cell device preparation. This invention uses aluminum foil as the back electrode and substrate of thin-film solar cells, the front electrode uses transparent conductive film AZO (ZnO:Al) or FTO (SnO 2 :F), and the surface layer is packaged with transparent resin, which does not change the current industrial production process. The structure of the photovoltaic layer does not need to change the current production process and equipment, and industrial production can be realized without upgrading. The invention mainly solves the problems of high cost, inflexibility, high transportation cost and fragility of thin-film solar cells produced in industry at present. The bottleneck encountered in the current industrial production of thin film solar cells is solved by changing the back electrode, the front electrode and the packaging material.
Description
技术领域technical field
本发明涉及一种薄膜太阳能电池的新结构，特别涉及在柔性基体上制备各种非晶硅、微晶硅、多晶硅、CIS/CIGS、CdTe/CdS等薄膜太阳能电池。The invention relates to a new structure of a thin-film solar cell, in particular to preparing various thin-film solar cells such as amorphous silicon, microcrystalline silicon, polycrystalline silicon, CIS/CIGS, CdTe/CdS, etc. on a flexible substrate.
背景技术Background technique
太阳能是人类取之不尽用之不竭的可再生能源。也是清洁能源，不产生任何的环境污染。在太阳能的有效利用当中；大阳能光电利用是近些年来发展最快，最具活力的研究领域，是其中最受瞩目的项目之一。为此，人们研制和开发了太阳能电池。一直以来，高生产成本困扰着太阳能电池模块制造业的发展。为了提高产量并降低成本，这些企业正在生产第二代的新型薄膜太阳能电池，薄膜太阳能电池目前只占全部太阳能电池市场销量的10％，但有望在10年后达到40％左右。薄膜太阳能模块要比以前的晶硅太阳能电池成本低，重量也更轻，因而受到广泛关注。Solar energy is an inexhaustible renewable energy source for human beings. It is also clean energy and does not produce any environmental pollution. Among the effective utilization of solar energy; solar photovoltaic utilization is the fastest growing and most dynamic research field in recent years, and it is one of the most watched projects. To this end, people have researched and developed solar cells. For a long time, high production cost has plagued the development of solar cell module manufacturing industry. In order to increase production and reduce costs, these companies are producing second-generation new thin-film solar cells. Thin-film solar cells currently only account for 10% of the total solar cell market sales, but it is expected to reach about 40% in 10 years. Thin-film solar modules are less costly and lighter than previous crystalline silicon solar cells, and thus have attracted widespread attention.
通常的晶体硅太阳能电池是在厚度350～450μm的高质量硅片上制成的，这种硅片从提拉或浇铸的硅锭上锯割而成。因此实际消耗的硅材料更多。为了节省材料，人们从70年代中期就开始在相对廉价衬底上沉积多晶硅薄膜，目前制备多晶硅薄膜电池多采用化学气相沉积法，包括低压化学气相沉积(LPCVD)和等离子增强化学气相沉积(PECVD)工艺。此外，液相外延法(LPPE)和溅射沉积法也可用来制备多晶硅薄膜电池。化学气相沉积主要是以SiH2Cl2、SiHCl3、SiCl4或SiH4，为反应气体，在一定的保护气氛下反应生成硅原子并沉积在加热的衬底上，衬底材料工业上一般选用透明导电玻璃。开发太阳能电池的两个关键问题就是：提高转换效率和降低成本。由于非晶硅薄膜太阳能电池的成本低，便于大规模生产，普遍受到人们的重视并得到迅速发展，其实早在70年代初，就已经开始了对非晶硅电池的研制工作，近几年它的研制工作得到了迅速发展。非晶硅薄膜太阳能电池的结构通常为透明导电玻璃/p-Si/i-Si/n-Si/Al或Ag薄膜，具体制备方法如下，在玻璃基体上通过化学气相沉积、喷雾热解、溅射技术等制备一层透明导电薄膜，成分通常为F掺杂的SnO2或Al掺杂的ZnO，然后分别沉积p-Si/i-Si/n-Si，最后再沉积一层约200nm厚的Al或Ag薄膜作为背电极，具体结构如图1所示。目前，在微晶、非晶硅薄膜太阳能电池方面形成很多专利，主要都集中在硅的结构形式，单结、叠层，制备工艺优化等等，例如，北京市太阳能研究所有限公司的励旭东、李海玲、许颖等人公开了一种新结构的晶体硅太阳能电池(CN200610153054.7)，其要点是在N型单晶硅衬底背面沉积一层硅薄膜形成异质PN结，来代替常规的扩散法在电池正面制备的同质PN结，提高转化效率。Common crystalline silicon solar cells are made on high-quality silicon wafers with a thickness of 350-450 μm, which are sawn from pulled or cast silicon ingots. Therefore, more silicon material is actually consumed. In order to save materials, people began to deposit polysilicon thin films on relatively cheap substrates since the mid-1970s. Currently, chemical vapor deposition methods are mostly used to prepare polysilicon thin film cells, including low-pressure chemical vapor deposition (LPCVD) and plasma-enhanced chemical vapor deposition (PECVD). craft. In addition, liquid phase epitaxy (LPPE) and sputtering deposition methods can also be used to prepare polycrystalline silicon thin film batteries. Chemical vapor deposition mainly uses SiH 2 Cl 2 , SiHCl 3 , SiCl 4 or SiH 4 as the reaction gas, reacts to form silicon atoms in a certain protective atmosphere and deposits them on the heated substrate. The substrate material is generally selected in the industry. Transparent conductive glass. Two key issues in developing solar cells are: improving conversion efficiency and reducing cost. Due to the low cost of amorphous silicon thin-film solar cells and the convenience of large-scale production, it has generally attracted people's attention and developed rapidly. In fact, as early as the early 1970s, the research and development of amorphous silicon cells had already begun. In recent years, it The research and development work has been developed rapidly. The structure of amorphous silicon thin-film solar cells is usually transparent conductive glass/p-Si/i-Si/n-Si/Al or Ag thin film, the specific preparation method is as follows, on the glass substrate by chemical vapor deposition, spray pyrolysis, sputtering Prepare a layer of transparent conductive film by radiation technology, the composition is usually F-doped SnO 2 or Al-doped ZnO, then deposit p-Si/i-Si/n-Si respectively, and finally deposit a layer of about 200nm thick Al or Ag film is used as the back electrode, and the specific structure is shown in Figure 1. At present, many patents have been formed on microcrystalline and amorphous silicon thin-film solar cells, mainly focusing on the structural form of silicon, single junction, stacking, and optimization of preparation processes. For example, Li Xu of Beijing Solar Energy Research Institute Co., Ltd. Dong, Li Hailing, Xu Ying and others disclosed a new structure of crystalline silicon solar cells (CN200610153054.7), the main point of which is to deposit a layer of silicon film on the back of the N-type single crystal silicon substrate to form a heterogeneous PN junction, instead of The homogeneous PN junction prepared on the front of the battery by the conventional diffusion method improves the conversion efficiency.
作为一种非常重要的薄膜材料，CdTe的禁带宽度为1.45eV，其禁带宽非常接近光伏材料的理想禁带宽度，而且它是直接带隙材料，具有很高的光吸收系数，CdTe太阳能电池的理论转换效率在29％左右。虽然同质结n-CdTe/p-CdTe也可以作太阳能电池，但是转换效率很低，一般小于10％，其原因是CdTe的光吸收系数很高，使大部分光在电池表面1-2μm内就已被吸收并且激发出电子和空穴对，但是这些少数载流子几乎在表面就被复合掉，即在电池的表面形成“死区”，从而导致其转换效率低。为了避免这种现象，一般是在CdTe的表面生长一层“窗口材料”CdS薄膜。CdS是宽禁带半导体材料，带隙为2.42eV，与CdTe有相对较好的晶格、化学和热膨胀匹配。目前，实验室里CdTe/CdS太阳能电池的最高转换效率为16.7％，距其理论转换效率还有不小的差距。CdTe/CdS太阳能电池的结构通常为透明导电玻璃/CdS/CdTe/金属薄膜背电极，如图2所示。华南理工大学姚若河、郑学仁公开了一种薄膜太阳能电池及其制备方法(CN1547260)，其主要结构仍和上述结构相同，只是又在原有CdS/CdTe薄膜的基础上沉积p型、n型硅，提高转化效率。As a very important thin film material, CdTe has a band gap of 1.45eV, which is very close to the ideal band gap of photovoltaic materials, and it is a direct band gap material with a high light absorption coefficient. CdTe solar cells The theoretical conversion efficiency is around 29%. Although the homojunction n-CdTe/p-CdTe can also be used as a solar cell, the conversion efficiency is very low, generally less than 10%. It has been absorbed and excited electron and hole pairs, but these minority carriers are recombined almost on the surface, that is, a "dead zone" is formed on the surface of the battery, resulting in low conversion efficiency. In order to avoid this phenomenon, a layer of "window material" CdS film is generally grown on the surface of CdTe. CdS is a wide bandgap semiconductor material with a bandgap of 2.42eV, and it has a relatively good lattice, chemical and thermal expansion match with CdTe. At present, the highest conversion efficiency of CdTe/CdS solar cells in the laboratory is 16.7%, which is far from the theoretical conversion efficiency. The structure of CdTe/CdS solar cells is usually transparent conductive glass/CdS/CdTe/metal film back electrode, as shown in Figure 2. Yao Ruohe and Zheng Xueren of South China University of Technology disclosed a thin-film solar cell and its preparation method (CN1547260). Conversion efficiency.
为了寻找单晶硅电池的替代品，人们除开发了多晶硅、非晶硅薄膜太阳能电池外，又不断研制其它材料的太阳能电池。其中主要包括砷化镓III-V族化合物、硫化镉、硫化镉及铜锢硒薄膜电池等。上述电池中，尽管硫化镉、碲化镉多晶薄膜电池的效率较非晶硅薄膜太阳能电池效率高，成本较单晶硅电池低，并且也易于大规模生产，但由于镉有剧毒，会对环境造成严重的污染，因此，并不是晶体硅太阳能电池最理想的替代。砷化镓III-V化合物及铜铟硒薄膜电池由于具有较高的转换效率受到人们的普遍重视。铜铟硒CuInSe2简称CIS。CIS材料的能降为1.1eV，适于太阳光的光电转换，另外，CIS薄膜太阳电池不存在光致衰退问题。因此，CIS用作高转换效率薄膜太阳能电池材料也引起了人们的注目。CIS作为太阳能电池的半导体材料，具有价格低廉、性能良好和工艺简单等优点，将成为今后发展太阳能电池的一个重要方向，例如清华大学庄大明、张弓、方玲、杨波等公开一种铜铟镓硒薄膜太阳能电池及其制备方法(CN1367536)，其结构通常是在玻璃上沉积一层Mo或者Mo-Cu薄膜，然后是CIS或者Cu(InGa)Se2(CIGS)，再沉积CdS和i-ZnO，最后是透明导电薄膜电极，如图3所示。In order to find a substitute for monocrystalline silicon cells, in addition to the development of polycrystalline silicon and amorphous silicon thin-film solar cells, solar cells of other materials have been continuously developed. These mainly include gallium arsenide III-V compounds, cadmium sulfide, cadmium sulfide and copper indium selenium thin film batteries. Among the above-mentioned batteries, although polycrystalline thin-film batteries of cadmium sulfide and cadmium telluride have higher efficiency than amorphous silicon thin-film solar cells, their cost is lower than that of monocrystalline silicon batteries, and they are also easy to mass-produce, but because cadmium is highly toxic, it will It causes serious pollution to the environment, therefore, it is not the most ideal substitute for crystalline silicon solar cells. Gallium arsenide III-V compounds and copper indium selenium thin film batteries have attracted widespread attention due to their high conversion efficiency. Copper indium selenium CuInSe 2 is referred to as CIS. The energy of CIS materials is reduced to 1.1eV, which is suitable for photoelectric conversion of sunlight. In addition, CIS thin film solar cells do not have the problem of light-induced degradation. Therefore, the use of CIS as a material for thin-film solar cells with high conversion efficiency has also attracted people's attention. As a semiconductor material for solar cells, CIS has the advantages of low price, good performance and simple process, and will become an important direction for the development of solar cells in the future. Selenium thin-film solar cell and preparation method thereof (CN1367536), its structure is usually to deposit a layer of Mo or Mo-Cu film on glass, then CIS or Cu(InGa)Se2(CIGS), and then deposit CdS and i-ZnO, The last is the transparent conductive film electrode, as shown in Figure 3.
通过以上描述及专利文献可以知道，目前薄膜太阳能电池的结构主要是以玻璃为基体，透明导电薄膜做前表电极，200nm左右厚的铝或者银薄膜做背电极，中间为核心的电池层。既需要玻璃做基体，又需要铝或银薄膜做背电极。因此，传统的薄膜太阳能电池成本较高，且玻璃作为基体不能弯曲，运输成本高，易破碎等很多不利因素。因此，发展新型薄膜太阳能电池结构显得尤为重要。From the above description and patent literature, we can know that the current structure of thin-film solar cells is mainly based on glass, transparent conductive film as the front electrode, aluminum or silver film with a thickness of about 200nm as the back electrode, and the middle as the core battery layer. Both need glass as the substrate and aluminum or silver film as the back electrode. Therefore, the cost of traditional thin-film solar cells is high, and glass as a substrate cannot be bent, high transportation costs, easy to break and many other unfavorable factors. Therefore, it is particularly important to develop new thin-film solar cell structures.
发明内容Contents of the invention
本发明提出采用铝箔作为薄膜太阳能电池的基体和背电极，前表电极采用透明导电薄膜AZO(ZnO:Al)或者FTO(SnO2:F)，表层采用透明树脂封装，不改变原来中间光伏层的结构，从而不需要改变目前工业生产的工艺和设备。The present invention proposes to use aluminum foil as the substrate and back electrode of thin-film solar cells, the front surface electrode adopts transparent conductive film AZO (ZnO:Al) or FTO (SnO 2 :F), and the surface layer is encapsulated with transparent resin, without changing the original middle photovoltaic layer. structure, so that there is no need to change the current industrial production process and equipment.
实现本发明的制备方法如下：Realize the preparation method of the present invention as follows:
本发明使用厚度从100微米到1毫米的铝箔作为薄膜太阳能电池的基体，表面经清洗后放入真空室镀制光伏层，然后再沉积200纳米的透明导电薄膜作为前表电极，最后采用透明树脂封装。The present invention uses aluminum foil with a thickness of 100 microns to 1 mm as the substrate of thin-film solar cells. After the surface is cleaned, it is put into a vacuum chamber to plate a photovoltaic layer, and then a transparent conductive film of 200 nanometers is deposited as the front surface electrode, and finally transparent resin is used. encapsulation.
本发明的另一个技术方案是上述的前表电极采用厚度为200-300nm的AZO或FTO薄膜之一。Another technical solution of the present invention is that the above-mentioned front surface electrode adopts one of AZO or FTO films with a thickness of 200-300 nm.
本发明的又一个技术方案是上是所述的光伏层为微晶、非晶硅、CdTe/CdS或CIGS之一。Another technical solution of the present invention is that the photovoltaic layer is one of microcrystalline, amorphous silicon, CdTe/CdS or CIGS.
本发明的再一个技术方案是上述的透明环氧树脂为厚度为的0.3-1.0mm的乙烯-醋酸乙烯共聚物。Another technical solution of the present invention is that the above-mentioned transparent epoxy resin is an ethylene-vinyl acetate copolymer with a thickness of 0.3-1.0 mm.
本发明的优点Advantages of the invention
本发明主要解决目前工业生产的薄膜太阳能电池成本高，不能弯曲，易碎、运输成本高等问题，通过使用铝箔，既解决了易碎问题，又减少了铝背电极的制备过程，从而解决当前工业生产薄膜太阳能电池的所遇到的瓶颈。The invention mainly solves the problems of high cost, inflexibility, fragility, and high transportation cost of thin-film solar cells produced in industry at present. By using aluminum foil, it not only solves the problem of fragility, but also reduces the preparation process of aluminum back electrodes, thereby solving the current industrial problems. Bottlenecks encountered in the production of thin-film solar cells.
附图说明：Description of drawings:
图1当前工业应用中的硅基薄膜太阳能电池结构Figure 1 The structure of silicon-based thin-film solar cells in current industrial applications
图2当前工业应用中的CdTe/CdS薄膜太阳能电池结构Figure 2 CdTe/CdS thin film solar cell structure in current industrial applications
图3当前工业应用中的CIS/CIGS薄膜太阳能电池结构Figure 3 CIS/CIGS thin film solar cell structure in current industrial applications
图4实施例1设计的薄膜太阳能电池结构The thin-film solar cell structure designed in Fig. 4 embodiment 1
图5实施例2设计的薄膜太阳能电池结构The thin-film solar cell structure designed in Figure 5 embodiment 2
图6实施例3设计的薄膜太阳能电池结构The thin film solar cell structure designed in Figure 6 embodiment 3
具体实施方式Detailed ways
本发明将结合附图做进一步详述。The present invention will be described in further detail in conjunction with the accompanying drawings.
实施例1Example 1
如图4所示，使用厚度为100微米的铝箔作为薄膜太阳能电池的基体，表面经清洗后放入真空室镀制p-Si/i-Si/n-Si硅基光伏层，然后再沉积200纳米厚的透明导电薄膜AZO(ZnO:Al)作为前表电极，最后采用厚度为的0.3-1.0mm透明环氧树脂——乙烯-醋酸乙烯共聚物作为封装层封装。As shown in Figure 4, an aluminum foil with a thickness of 100 microns is used as the substrate of the thin-film solar cell. After the surface is cleaned, it is placed in a vacuum chamber to plate a p-Si/i-Si/n-Si silicon-based photovoltaic layer, and then deposited for 200 The nanometer-thick transparent conductive film AZO (ZnO:Al) is used as the front surface electrode, and finally a transparent epoxy resin with a thickness of 0.3-1.0mm - ethylene-vinyl acetate copolymer is used as the encapsulation layer for encapsulation.
实施例2Example 2
如图5所示，使用厚度为300微米铝箔作为薄膜太阳能电池的基体，表面经清洗后放入真空室镀制CdTe光伏层，然后制备CdS窗口层，之后再沉积200纳米厚的透明导电薄膜AZO(ZnO:Al)作为前表电极，最后采用厚度为的0.3-1.0mm透明环氧树脂——乙烯-醋酸乙烯共聚物作为封装层封装。As shown in Figure 5, aluminum foil with a thickness of 300 microns is used as the substrate of the thin-film solar cell, and the surface is cleaned and put into a vacuum chamber to plate a CdTe photovoltaic layer, then prepare a CdS window layer, and then deposit a 200-nanometer-thick transparent conductive film AZO (ZnO:Al) as the front surface electrode, and finally use a transparent epoxy resin with a thickness of 0.3-1.0mm-ethylene-vinyl acetate copolymer as the encapsulation layer.
实施例3Example 3
如图6所示，使用厚度为1毫米铝箔作为薄膜太阳能电池的基体，表面经清洗后放入真空室沉积一层Mo薄膜，然后是CIS或者CIGS，再沉积CdS和i-ZnO，最后沉积200纳米厚的透明导电薄膜AZO(ZnO:Al)作为前表电极，最后采用厚度为的0.3-1.0mm透明环氧树脂——乙烯-醋酸乙烯共聚物作为封装层封装。As shown in Figure 6, aluminum foil with a thickness of 1 mm is used as the substrate of thin-film solar cells. After the surface is cleaned, it is placed in a vacuum chamber to deposit a layer of Mo film, then CIS or CIGS, and then CdS and i-ZnO are deposited. Finally, 200 The nanometer-thick transparent conductive film AZO (ZnO:Al) is used as the front surface electrode, and finally a transparent epoxy resin with a thickness of 0.3-1.0mm - ethylene-vinyl acetate copolymer is used as the encapsulation layer for encapsulation.
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102270670A (en) * | 2011-07-15 | 2011-12-07 | 河北汉盛光电科技有限公司 | Silicon-based thin-film solar battery |
| CN102476694A (en) * | 2010-11-24 | 2012-05-30 | 吉富新能源科技(上海)有限公司 | Electric bicycle with transparent film solar panel |
| CN102587545A (en) * | 2011-01-11 | 2012-07-18 | 上海泰莱钢结构工程有限公司 | Photovoltaic building glass curtain wall component |
| CN102842629A (en) * | 2011-06-21 | 2012-12-26 | 张国生 | Thin-film solar cell with metal substrate as cell film substrate or packaging material |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN201069776Y (en) * | 2007-06-13 | 2008-06-04 | 上海银翊龙投资管理咨询有限公司 | Thin film solar battery |
| CN101286537A (en) * | 2007-04-09 | 2008-10-15 | 信越化学工业株式会社 | Manufacturing method of monocrystalline silicon solar cell and monocrystalline silicon solar cell |
| CN201408768Y (en) * | 2009-05-18 | 2010-02-17 | 王小牛 | Concentrating solar cell module |
-
2010
- 2010-03-31 CN CN 201010138886 patent/CN101814554A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101286537A (en) * | 2007-04-09 | 2008-10-15 | 信越化学工业株式会社 | Manufacturing method of monocrystalline silicon solar cell and monocrystalline silicon solar cell |
| CN201069776Y (en) * | 2007-06-13 | 2008-06-04 | 上海银翊龙投资管理咨询有限公司 | Thin film solar battery |
| CN201408768Y (en) * | 2009-05-18 | 2010-02-17 | 王小牛 | Concentrating solar cell module |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102476694A (en) * | 2010-11-24 | 2012-05-30 | 吉富新能源科技(上海)有限公司 | Electric bicycle with transparent film solar panel |
| CN102587545A (en) * | 2011-01-11 | 2012-07-18 | 上海泰莱钢结构工程有限公司 | Photovoltaic building glass curtain wall component |
| CN102842629A (en) * | 2011-06-21 | 2012-12-26 | 张国生 | Thin-film solar cell with metal substrate as cell film substrate or packaging material |
| CN102270670A (en) * | 2011-07-15 | 2011-12-07 | 河北汉盛光电科技有限公司 | Silicon-based thin-film solar battery |
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