CN101807774A - Self-stimulated Raman scattering laser of In-Band pump - Google Patents
Self-stimulated Raman scattering laser of In-Band pump Download PDFInfo
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- CN101807774A CN101807774A CN 201010159691 CN201010159691A CN101807774A CN 101807774 A CN101807774 A CN 101807774A CN 201010159691 CN201010159691 CN 201010159691 CN 201010159691 A CN201010159691 A CN 201010159691A CN 101807774 A CN101807774 A CN 101807774A
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- 238000001069 Raman spectroscopy Methods 0.000 title claims abstract description 60
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- 241000931526 Acer campestre Species 0.000 description 1
- 229910017502 Nd:YVO4 Inorganic materials 0.000 description 1
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Abstract
The invention discloses a self-stimulated Raman scattering laser of an In-Band pump, which comprises a laser pump source, a laser energy transfer optical fiber, a first planoconvex lens for collimation, a second planoconvex lens for focusing, a reflection mirror of a resonator cavity, a laser gain dielectric crystal, a laser output mirror and a laser collimating mirror which are sequentially arranged, wherein pump light outputted by the laser pump source is transmitted to the first planoconvex lens via the laser energy transfer optical fiber, collimated by the first planoconvex lens, focused by the second planoconvex lens and further focused on the end surface of the laser gain dielectric crystal, the laser gain dielectric crystal produces stimulated radiation after absorbing the pump light, when the radiation of fundamental frequency light in the resonator cavity exceeds the self-stimulated Raman scattering threshold of the laser gain dielectric crystal, the produced Raman laser is collimated and outputted by the laser collimating mirror. The self-stimulated Raman scattering laser can improve the self-stimulated Raman scattering conversion rate, eliminate the thermal relaxation process from the pump energy level to the laser energy level of electrons of the conventional pump way, improve the quantum efficiency, reduce the heat and increase the self-stimulated Raman scattering conversion rate.
Description
Technical field
The present invention relates to a kind of laser, relate in particular to a kind of self-stimulated Raman scattering laser of In-Band pumping.
Background technology
Stimulated Raman scattering is one of important means of laser nonlinear frequency transformation, a lot of laser gain crystal itself just have the characteristic of stimulated Raman scattering, therefore this crystal not only can be used as gain medium can also be as Raman crystal, so just can unite two into one two kinds of crystal, it is self-stimulated Raman scattering laser, make the simple of whole Optical Maser System change, compact, based on above advantage, the self-stimulated Raman scattering effect of gain medium is paid attention to by people gradually in recent years, but this simple structure also has its drawback, the temperature of gain medium crystal can raise when pump power is higher, the rising of this temperature can have a strong impact on the efficient of stimulated Raman scattering, we can find that the reduction or the power drop of slope efficiency can appear in self-stimulated Raman scattering when high pumping power, this phenomenon can see in a lot of documents, as: be published in article " the High-power diode-pumped actively Q-switchedNd:YVO on the Opt.Lett (optics letter) in 2004
4Self-Raman laser:influence of dopant concentration " (crystal doping concentration is initiatively transferred the influence of Q Nd:YVO4 from raman laser output to the high-power diode pumping); Be published in the article " Continuous-wave, all-solid-state interacavity Raman laser " (the all-solid-state continuous wave inner chamber is from Raman laser) on the Opt.Lett in 2005 and be published in Opt ﹠amp in 2009; Article on the Laser Technology (optics and laser technology) " Laser diodepumped actively Q-switched Nd:GdVO
4Self-Raman laser operating at 1173nm " all there is this phenomenon in (the laser diode-pumped Q Nd:GdVO4 that initiatively transfers is from Raman 1173nm laser), and this mainly is the rising of laser crystal temperature, and stimulated Raman scattering efficient is reduced greatly.In order to address this problem the method that researchers have proposed a lot of solutions, as the doping content, the utilization that reduce the gain medium crystal meet crystal as the gain medium crystal, but these methods all can only play alleviation, can not tackle the problem at its root, it is necessary therefore proposing a kind of method that tackles the problem at its root.
Summary of the invention
At above-mentioned prior art, the invention provides a kind of self-stimulated Raman scattering laser of In-Band pumping, can fundamentally reduce the thermal effect of gain medium crystal, improve the efficient of self-stimulated Raman scattering laser, the self-stimulated Raman scattering laser of In-Band pumping of the present invention has advantages such as volume is little, efficient is high, simple and reliable.
In order to solve the problems of the technologies described above, the technical scheme that the present invention is achieved is: a kind of self-stimulated Raman scattering laser of In-Band pumping comprises laser pumping source, laser energy-transmission optic fibre, first planoconvex lens that is used to collimate, second planoconvex lens that is used to focus on, cavity mirror, gain medium crystal, laser output mirror and the laser alignment mirror arranged in turn; The pump light of described laser pumping source output is transferred to first planoconvex lens through the laser energy-transmission optic fibre, behind its collimation, focus on the end face that pump light is focused on the gain medium crystal by second planoconvex lens, produce stimulated radiation behind the described gain medium crystal absorptive pumping light, when the fundamental frequency light radiation in the resonant cavity surpasses the self-stimulated Raman scattering threshold value of gain medium crystal, begin to produce stimulated Raman scattering, the raman laser that is produced is exported by outgoing mirror, and by the output that collimates of laser alignment mirror.
Compared with prior art, the invention has the beneficial effects as follows:
The present invention is by the film system design of cavity mirror and laser output mirror and gain medium crystal, make basic frequency laser produce vibration, because cavity mirror and laser output mirror are formed the positive feedback effect of resonant cavity, basic frequency laser is constantly amplified, self-stimulated Raman scattering begins to produce after surpassing the threshold power of self-stimulated Raman scattering, and in resonant cavity, vibrate, amplify, and export by outgoing mirror.Because laser pumping source is 914nm, 912nm, 938nm or 946nm, with common 808nm pumping source mutually specific energy reduce greatly because the thermal effect that the quantum loss produces, thereby improve the efficient of stimulated Raman scattering, the transition regime of 808nm pumping and In-Band pumping is shown in Fig. 1 (a) and Fig. 1 (b), is 14% for 1.06 microns spectral line 914nm as the heat that pump light produces, is 24% and utilize 808nm as the heat that pump light produces, the mode of as seen this In-Band pumping can reduce thermal effect greatly, help the generation of 1.06 microns self-stimulated Raman scattering, and can improve the beam quality of output laser to a great extent.
Description of drawings
Fig. 1 (a) is the schematic diagram of traditional pump mode and In-Band pump mode transition regime;
Fig. 1 (b) is the schematic diagram of In-Band pump mode transition regime of the present invention;
Fig. 2 (a) is the embodiment that adopts common laser gain media crystal in the laser of the present invention;
Fig. 2 (b) is the embodiment that adopts recombination laser gain media crystal in the laser of the present invention.
Description of reference numerals among the figure:
1, pumping source, 2, optical fiber, 3, first planoconvex lens, 4, second planoconvex lens, 5, cavity mirror, 6, the gain medium crystal, 7, laser output mirror, 8, collimating mirror, 10, relaxation process, 20,1.06 microns laser, 30, the 880nm pump light, 40, the 914nm pump light.
Embodiment
Below in conjunction with the drawings and specific embodiments the present invention is done to describe in further detail.
Shown in Fig. 2 (a) and Fig. 2 (b), adopt pumping source 1, its centre wavelength is that 914nm also can be 912nm, 938nm or 946nm, refrigeration modes adopts recirculated water cooling or semiconductor cooler TEC cooling, temperature is set at 25 ℃, this laser pumping source 1 adopts continuously, modulation or pulse mode work, through diameter is energy-transmission optic fibre 2, the optical fiber core diameter is 400 microns, numerical aperture is 0.22, pump light is transferred on the collimation focusing system, and this collimation focusing system is made of first planoconvex lens 3 and second planoconvex lens 4, and focal length all is 25mm, constituted 1: 1 imaging system by first planoconvex lens 3 and second planoconvex lens 4, pump light is focused on the laser crystal 6, and the spot radius after the focusing is 200 microns, and the gain medium crystal 6 is Nd:YVO
4, doping content is 0.8%, specification is 3 * 3 * 18mm
3, to cool off with recirculated water or TEC, temperature is set at 18 ℃, and the gain medium crystal 6 also can be Nd:GdVO
4Or Nd:KGW etc. can produce the gain medium crystal of stimulated Raman scattering, the gain medium crystal 6 can be a common laser gain media crystal, shown in Fig. 2 (a), the also composite crystal of forming by doped crystal and non-doped crystal, the gain medium crystal 6 is a composite crystal as shown in Fig. 2 (b), this composite crystal is that the two ends of bonding growth are non-doped portion, and middle for mixing part, also can have only an end is the crystal of doped portion.Under the effect of pump light, this gain medium crystal 6 produces population inversion, cavity mirror 5 is a level crossing, laser output mirror 7 is the plano-concave mirror, the radius of curvature of concave surface is 200mm, the optical medium film of cavity mirror 5 double coated 914nm high permeabilities, the right side is coated with the optical medium film of the high reflectance of 1.06 microns and 1.17 microns, and the optical medium film that the single or double of described cavity mirror 5 is coated with can also be one of following several situations: the double coated of described cavity mirror 5 has 914nm, 912nm, the optical medium film of one or more high permeabilities in 938nm and the 946nm wave band, single or double is coated with the optical medium film of the high reflectance of fundamental frequency wave band, single or double is coated with the optical medium film of the high reflectance of raman laser wave band.The optical medium film of the high reflectance of laser output mirror 7 double coated 1.06 micron wavebands, the left side is coated with 7% transmissivity optical medium film of 1.17 micron wavebands, the right side is coated with the high-transmission rate optical medium film of 1.17 micron wavebands, and the optical medium film that the single or double of described laser output mirror 7 is coated with can also be one of following several situations: the concave surface of described laser output mirror 7 is coated with the optical medium film of the high reflectance of basic frequency laser wave band, concave surface is coated with the part transmissivity optical medium film of raman laser wave band, the plane is coated with the high-transmission rate optical medium film of raman laser wave band.Distance between cavity mirror 5 and the laser output mirror 7 is 100mm, because gain medium crystal 6, the plated film design of cavity mirror 5 and laser output mirror 7,1.06 micron waves will be formed be excited to amplify, because cavity mirror 5 and 7 pairs of 1.06 microns laser of laser output mirror are all high anti-, therefore 1.06 microns laser can not be output to outside the chamber, 1.06 micron laser is constantly strengthened under the amplification of the feedback of resonant cavity and gain medium, after the Raman threshold value that reaches stimulated scattering, begin to produce 1.17 microns the diffusing laser of excited Raman, 1.17 constantly vibrating between cavity mirror 5 and laser output mirror 7, the laser of micron obtains amplifying, simultaneously by laser output mirror 7 outputs, collimate the compression angle of divergence then through 8 pairs of laser of collimating mirror.
To sum up, the present invention can improve the self-stimulated Raman scattering transfer ratio, be to adopt the In-Band pump mode, utilize the pump light of special wavelength to make electronics directly transit to upper laser level by the high level of ground state Stark splitting, eliminate conventional pump mode electronics by the hot relaxation process of pumping level to laser levels, improve quantum efficiency, reduce heat, increase the self-stimulated Raman scattering transfer ratio.The present invention is widely used in fields such as military affairs, medical treatment, communication, scientific research.
Although top invention has been described in conjunction with figure; but the present invention is not limited to above-mentioned embodiment; above-mentioned embodiment only is schematic; rather than it is restrictive; those of ordinary skill in the art is under enlightenment of the present invention; under the situation that does not break away from aim of the present invention, can also make a lot of distortion, these all belong within the protection of the present invention.
Claims (10)
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101924325A (en) * | 2010-09-11 | 2010-12-22 | 天津大学 | In-Band Pumped Thermally Sensitive Cavity 808nm Triggered Self-Q-Switching Laser |
| CN102244344A (en) * | 2011-06-02 | 2011-11-16 | 天津大学 | Neodymium-doped ion fiber laser of In-band pump |
| CN107342818A (en) * | 2017-06-23 | 2017-11-10 | 武汉光迅科技股份有限公司 | Realize the self-driven method and system framework that Higher-order Raman system Q factor optimizes |
| CN111934181A (en) * | 2020-07-22 | 2020-11-13 | 南京邮电大学 | Low-threshold organic Raman amplifier and application |
| CN113363798A (en) * | 2021-05-20 | 2021-09-07 | 厦门大学 | Adjustable high-optical-efficiency broadband multi-longitudinal-mode Raman microchip laser |
| CN115275752A (en) * | 2022-07-14 | 2022-11-01 | 中国科学院空天信息创新研究院 | Laser resonant cavity |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102801102A (en) * | 2012-09-07 | 2012-11-28 | 长春理工大学 | 3.9 mu m mid infrared laser |
| WO2018226153A1 (en) * | 2017-06-07 | 2018-12-13 | National University Of Singapore | Lock-in detection free raman imaging method and apparatus |
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| CN87214068U (en) * | 1987-10-10 | 1988-09-07 | 清华大学 | Miniature internal chamber raman frequency-shift laser |
| CN1476131A (en) * | 2003-06-27 | 2004-02-18 | 中国科学院上海光学精密机械研究所 | Multiwavelength solid-state harmonic Raman laser |
| CN1825191A (en) * | 2005-02-24 | 2006-08-30 | 阿尔卡特公司 | Raman Scattered Optical Amplifier |
| CN101242076A (en) * | 2008-02-28 | 2008-08-13 | 山东大学 | A KTA crystal full solid Raman laser |
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2010
- 2010-04-29 CN CN2010101596911A patent/CN101807774B/en not_active Expired - Fee Related
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN87214068U (en) * | 1987-10-10 | 1988-09-07 | 清华大学 | Miniature internal chamber raman frequency-shift laser |
| CN1476131A (en) * | 2003-06-27 | 2004-02-18 | 中国科学院上海光学精密机械研究所 | Multiwavelength solid-state harmonic Raman laser |
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| CN101242076A (en) * | 2008-02-28 | 2008-08-13 | 山东大学 | A KTA crystal full solid Raman laser |
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101924325A (en) * | 2010-09-11 | 2010-12-22 | 天津大学 | In-Band Pumped Thermally Sensitive Cavity 808nm Triggered Self-Q-Switching Laser |
| CN101924325B (en) * | 2010-09-11 | 2012-05-02 | 天津大学 | 808nm triggered self-Q-switched laser of In-Band pump heat sensitive cavity |
| CN102244344A (en) * | 2011-06-02 | 2011-11-16 | 天津大学 | Neodymium-doped ion fiber laser of In-band pump |
| CN102244344B (en) * | 2011-06-02 | 2012-10-03 | 天津大学 | An In-band Pumped Nd-Ion Fiber Laser |
| CN107342818A (en) * | 2017-06-23 | 2017-11-10 | 武汉光迅科技股份有限公司 | Realize the self-driven method and system framework that Higher-order Raman system Q factor optimizes |
| CN107342818B (en) * | 2017-06-23 | 2020-04-24 | 国家电网公司信息通信分公司 | Self-driven method and system architecture for realizing Q factor optimization of high-order Raman system |
| CN111934181A (en) * | 2020-07-22 | 2020-11-13 | 南京邮电大学 | Low-threshold organic Raman amplifier and application |
| CN111934181B (en) * | 2020-07-22 | 2022-08-30 | 南京邮电大学 | Low-threshold organic Raman amplifier and application thereof |
| CN113363798A (en) * | 2021-05-20 | 2021-09-07 | 厦门大学 | Adjustable high-optical-efficiency broadband multi-longitudinal-mode Raman microchip laser |
| CN115275752A (en) * | 2022-07-14 | 2022-11-01 | 中国科学院空天信息创新研究院 | Laser resonant cavity |
| CN115275752B (en) * | 2022-07-14 | 2024-12-06 | 中国科学院空天信息创新研究院 | A laser resonant cavity |
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