CN101794707B - Electron emission type light emitting device and packaging method thereof - Google Patents

Abstract

An electron emission type light emitting device and a method for packaging the same. The electron emission type light emitting device comprises a first substrate, a second substrate, a sealant, a gas and a fluorescent layer. The first substrate is provided with a cathode, and the cathode is provided with a pattern design. The second substrate is opposite to the first substrate, and an anode is arranged on the second substrate. The sealant is positioned at the edges of the first substrate and the second substrate so as to assemble the first substrate and the second substrate together. Gas is arranged between the cathode and the anode, and gas discharge is used for inducing the cathode to emit a plurality of electrons, wherein the gas exists in the environment with the gas pressure of 10 torr to 10 torr^-3Torr . The fluorescent layer is configured on the moving path of the electrons to collide with the electrons to emit light. The first substrate is provided with a plurality of concave grains, and the surface of the first substrate is covered with a conformal conductive layer to form a cathode.

Description

Electron emission type light emitting device and packaging method thereof

technical field

The present invention relates to a light-emitting element and its packaging method, and in particular to an electron-emitting light-emitting device and its packaging method. the

Background technique

Currently mass-produced light emitting devices include gas discharge light sources and field emission light sources. Gas discharge light sources are applied to plasma panels or gas discharge lamps. The electric field between the cathode and the anode is mainly used to free the gas filled in the discharge chamber, and the electrons hit the gas to produce transitions and emit ultraviolet light through the conduction of the gas. light, and the fluorescent layer also located in the discharge cavity emits visible light after absorbing ultraviolet light. The field emission light source is applied to the field emission display of carbon nanotubes, etc., mainly to provide an ultra-high vacuum environment, and to make the electron emitter of nano-carbon material on the cathode to utilize the high aspect ratio of the electron emitter. The microstructure helps electrons to escape from the cathode by overcoming the workfunction of the cathode. In addition, a fluorescent layer is coated on an anode made of indium tin oxide (ITO), so that electrons escape from the carbon nanotubes of the cathode through a high electric field between the cathode and the anode. In this way, electrons can hit the fluorescent layer on the anode in a vacuum environment to emit visible light. the

However, the above two light emitting structures have their disadvantages. For example, considering the attenuation problem after being irradiated by ultraviolet light, there are special requirements for the selection of materials in the gas discharge light source. In addition, because the luminescence mechanism of gas discharge undergoes two processes to emit visible light, the loss of energy is relatively large. If plasma needs to be generated during the process, it consumes more power. On the other hand, a field emission light source needs to grow or coat a uniform electron emission terminal on the cathode, but the technology for large-scale production of such a cathode structure is not yet mature, and the uniformity and production yield of the electron emission terminal are not good. bottleneck. In addition, the distance between the cathode and the anode of the field emission light source needs to be precisely controlled, and packaging in an ultra-high vacuum is difficult, which relatively increases the manufacturing cost. the

In addition, in the design of the light-emitting device, thinning and uniformity of light emission are also the focus of current research and development of the light-emitting device. the

Invention content

The invention provides an electron emission type light-emitting device, which can emit uniform light and can meet the requirement of thinning. the

The present invention further provides a packaging method for an electron emission type light emitting device, which can allow gas to be introduced conveniently and quickly. the

The invention provides an electron emission light emitting device, which includes a first substrate, a second substrate, a gas, a sealant and a fluorescent layer. A cathode is configured on the first substrate, and the cathode has a pattern design. The second substrate is located opposite to the first substrate, and an anode is arranged on the second substrate. The sealant is located at the edges of the first substrate and the second substrate to assemble the first substrate and the second substrate together. The gas is arranged between the cathode and the anode, and the gas discharge is used to induce the cathode to emit a plurality of electrons, wherein the pressure of the environment where the gas exists is between 10 torr to 10 ^-3 torr. The fluorescent layer is disposed on the moving path of the electrons, and emits light by colliding with the electrons. The first substrate has a plurality of concave grooves, and the surface of the first substrate is covered with a conformal conductive layer to form a cathode.

In an embodiment of the present invention, the aforementioned cathode includes a conductive layer and a plurality of conductive patterns on the surface of the conductive layer. the

In an embodiment of the present invention, the above-mentioned first substrate has a plurality of concave grooves, and the surface of the first substrate is covered with a conformal conductive layer to form a cathode. the

In an embodiment of the present invention, a plurality of first spacers are distributed in the above-mentioned sealant. the

In an embodiment of the present invention, the above-mentioned electron emission light emitting device further includes a plurality of second spacers distributed between the cathode and the anode. the

In an embodiment of the present invention, the above-mentioned first substrate and second substrate are plane or curved. the

In an embodiment of the present invention, the above-mentioned fluorescent layer is located on the surface of the anode. the

In an embodiment of the present invention, the above-mentioned anode material includes transparent conductive oxide (TCO). the

In an embodiment of the present invention, the above-mentioned anode or cathode material includes metal. the

In an embodiment of the present invention, the above-mentioned electron emission light emitting device further includes an induced discharge structure disposed on at least one of the anode and the cathode. the

In an embodiment of the present invention, the above-mentioned induced discharge structure includes a metal material, carbon nanotube (carbon nanotube), nano-carbon wall (carbon nanowall), nano-porous carbon material (carbon nanoporous), columnar zinc oxide (ZnO), oxide Zinc (ZnO) materials, etc. the

In an embodiment of the present invention, the above-mentioned electron emission light emitting device further includes a secondary electron source material layer disposed on the cathode. the

In an embodiment of the present invention, the materials of the above-mentioned secondary electron source material layer include magnesium oxide (MgO), silicon dioxide (SiO2), terbium trioxide (Tb ₂ O ₃ ), lanthanum trioxide (La ₂ O ₃ ) or ceria (CeO ₂ ).

In an embodiment of the present invention, the aforementioned gas includes inert gas, hydrogen, carbon dioxide, oxygen or air. the

The invention further provides a packaging method for an electron emission type light emitting device. This method firstly provides an electron emission light-emitting device, which includes a first substrate and a second substrate, and a cathode has been formed on the first substrate, an anode has been formed on the second substrate, and at least one of the anode and the cathode has been formed Fluorescent layer. A sealant is formed between the first substrate and the second substrate, and the sealant has an opening. Next, a ventilation pipe is installed at the opening of the sealant, and the ventilation pipe is connected with the pipeline, wherein the pipeline is connected with the suction device and the gas filling device. Afterwards, the electron emission light-emitting device is heated, and the gas extraction device is turned on to extract the gas in the electron emission light-emitting device. Afterwards, the gas pumping device is turned off, and the gas filling device is turned on, so as to fill the gas into the electron emission light emitting device. Finally, blow off the snorkel to seal the opening with the sealant. the

In an embodiment of the present invention, the above-mentioned electron emission light-emitting device is heated to 300-400 degrees Celsius. the

In an embodiment of the present invention, the above-mentioned cathode on the first substrate is a cathode with a pattern design. the

In an embodiment of the present invention, the above-mentioned first substrate and second substrate are plane or curved. the

In an embodiment of the present invention, a plurality of spacers are distributed in the above-mentioned sealant. the

Based on the above, since the cathode of the electron-emitting light-emitting device of the present invention has a pattern design, the electric field edge effect between the two electrodes can be dispersed, thereby increasing the uniformity of light emission of the light-emitting device, and reducing the overall size of the electron-emitting light-emitting device. thickness. the

In order to make the above-mentioned features and advantages of the present invention more comprehensible, the following specific embodiments are described in detail with reference to the accompanying drawings. the

Description of drawings

FIG. 1 is a schematic cross-sectional view of an electron emission type light emitting device according to an embodiment of the present invention. the

2A and 2B are schematic cross-sectional views of a cathode in an electron emission light emitting device according to an embodiment of the present invention. the

3 to 6 are schematic cross-sectional views of electron emission light emitting devices according to several embodiments of the present invention. the

7 and 8 are schematic cross-sectional views of a curved electron emission light emitting device according to an embodiment of the present invention. the

9A to 9C are schematic views of a packaging method of an electron emission light emitting device according to an embodiment of the present invention. the

Explanation of reference signs

202: Electronics

202': Secondary electrons

204: Ion

208: Second substrate

210: anode

218: The first substrate

218a: Dimple

220: Cathode

220a: conductive layer

220b: conductive pattern

230: gas

240: fluorescent layer

222: Secondary electron source material layer

252, 254: Induced discharge structure

250: sealant

250a, 230a: spacers

251: opening

302: heating device

304: Air pipe

306: Air extraction device

308: Filling gas device

310, 312: valves

320: pipeline

Detailed ways

The electron emission light emitting device proposed by the present invention has both the advantages of the traditional gas discharge light source and the field emission light source, and overcomes the shortcomings of the two traditional light emitting structures. More specifically, the electron-emitting light-emitting device of the present invention does not need to form an electron-emitting terminal, but utilizes a rare gas discharge to easily export electrons from the cathode, and make the electrons directly react with the impinging fluorescent layer to emit light. Compared with the known gas discharge light source, the amount of gas filled in the electron emission light-emitting device of the present invention only needs to be able to export electrons from the cathode, and it does not use ultraviolet light to irradiate the fluorescent layer to generate light, so it does not Need to worry about the attenuation of the material in the component by ultraviolet light. From experiments and theoretical verification, we know that the gas in the electron emission light-emitting device of the present invention is relatively thin, so the mean free path of electrons can reach about 5 mm or more. In other words, most of the electrons will directly collide with the fluorescent layer before colliding with the molecules of the gas to emit light. In addition, the electron emission light-emitting device of the present invention does not need to go through two processes to generate light, so the luminous efficiency is high and energy consumption can be reduced. the

In addition, the electron emission light-emitting device of the present invention is filled with dilute gas, so an ultra-high vacuum environment is not required, and difficulties encountered in ultra-high vacuum packaging can be avoided. In addition, it is known through experiments that the electron emission light-emitting device of the present invention can reduce the turnon voltage (turnon voltage) to about 0.4V/μm with the help of gas, which is far lower than the 1-3V/μm of common field emission light sources. Start voltage value. Furthermore, according to the Child-Langmuir equation, substituting the actual relevant data of the electron emission light emitting device of the present invention into the calculation, it can be drawn that the distribution range of the cathode dark area of the electron emission light emitting device of the present invention is about 10 to 25 centimeters (cm ), much larger than the distance between the anode and the cathode. In other words, there is almost no gas in a plasma state between the anode and the cathode, so it can be confirmed that the electron emission light emitting device of the present invention does not use the plasma mechanism to emit light, but uses the gas conduction discharge method to export the electrons from the cathode, and then The electrons directly interact with the fluorescent layer to emit light. the

Please refer to FIG. 2 , which is a schematic cross-sectional view of the electron emission light emitting device of the present invention. As shown in FIG. 2 , the electron emission light emitting device 200 mainly includes a first substrate 218 , a second substrate 208 , a sealant 250 , a gas 230 and a fluorescent layer 240 , wherein the first substrate 218 has a cathode 220 on it, and the second substrate 208 There is an anode 210 on it. the

The first substrate 218 and the second substrate 208 are, for example, transparent substrates made of glass, polymer, or other suitable transparent materials. the

The anode 210 is, for example, made of a transparent conductive material (Transparent Conductive Oxide, TCO), so that the generated light can pass through the anode 210 and exit the electron emission light-emitting device 200, wherein the transparent conductive material that can be selected is, for example, indium tin oxide common materials such as indium zinc oxide (ITO) or indium zinc oxide (IZO). Certainly, in other embodiments, the anode 210 may also be made of metal or other materials with good conductivity. In addition, the cathode 220 can also be made of a transparent conductive material or a metal, wherein the transparent conductive material that can be selected is, for example, common materials such as indium tin oxide or indium zinc oxide. It should be noted that at least one of the cathode 220 and the anode 210 is a transparent conductive material, so that the generated light can pass through the cathode 220, the anode 210 or both. the

Generally, a higher density distribution of electric lines of force and an electric field will be generated between the edges of the two parallel plate electrodes, which is called the edge effect of the electric field. Moreover, when the distance between the two electrodes is closer, the edge effect of the electric field will be more severe, resulting in uneven discharge, that is, uneven light emission. If the light-emitting device is to be thinned, the problems caused by the edge effect must be taken into consideration. Therefore, the present invention specifically designs a pattern on the cathode of the electron emission type light-emitting device to disperse the edge effect. In other words, the present invention designs patterns on the cathode, and since the edges of the pattern of each cathode also have edge effects, the generated electric field edge effects can be dispersed, so that the electric field edge effects are no longer concentrated on the four edges of the light emitting device. The method of designing patterns on the cathode can be the embodiment shown in FIG. 2A or FIG. 2B . the

Please refer to FIG. 2A first. In this embodiment, the method for making the cathode has a pattern design is to form a conductive layer 220a on the first substrate 218 first, and then form a plurality of conductive patterns 220b on the surface of the conductive layer 220a, so that the cathode 220 The surface has a pattern of ups and downs. The method of forming the conductive pattern 220b is, for example, performing a deposition process first and then an etching process, or directly performing a deposition process with a mask. The conductive pattern 220b may be in the form of stripes, blocks, islands and any shape. Materials of the conductive layer 220 a and the conductive pattern 220 b are, for example, transparent conductive materials or metals, and the materials of the two may be the same or different. the

In another embodiment, a method of patterning the cathode 20 is shown in FIG. 2B . Recesses 218 a are first formed on the surface of the first substrate 218 , and then a conformal conductive layer 220 is formed on the surface of the first substrate 218 to form a cathode 220 with a pattern design. The method for forming the pattern 218a on the surface of the first substrate 218 is, for example, to engrave the first substrate 217 with an ultrasonic process. Similarly, the grooves 218a carved on the first substrate 217 may be in the form of stripes, blocks or dots, and may be in any shape. the

Please return to FIG. 1 , the electron emission light-emitting device further includes a fluorescent layer 240 , a sealant 250 and a gas 230 in addition to the above-mentioned cathode 220 and anode 210 . the

The fluorescent layer 240 is disposed on the moving path of the electrons 202 to interact with the electrons 202 to emit light. In this embodiment, the phosphor layer 240 is coated on the surface of the anode 210 , for example. In addition, by selecting the type of the fluorescent layer 240 , the electron emission light emitting device can emit different types of light such as visible light, infrared light or ultraviolet light. the

The sealant 250 is located at the edges of the first substrate 218 and the second substrate 208 to assemble the first substrate 218 and the second substrate 208 together. The sealant 250 can be an ultraviolet light sealant, a heat curing sealant or other suitable sealants. In addition, according to an embodiment of the present invention, spacers 250 a are distributed in the sealant 250 to enhance the supporting strength of the sealant 250 . In addition, according to the size of the electron emission light emitting device, it can be selected whether to place the support 230a inside the electron emission light emitting device to support the gap between the first substrate 218 and the second substrate 208 . the

It is worth mentioning that since the cathode 220 of the present invention is designed with a pattern to disperse the edge effect of the electric field between the two electrodes, it can not only improve the uniformity of light emission, but also achieve the purpose of thinning the light emitting device. More specifically, since the present invention can disperse the edge effect of the electric field between the two electrodes, reducing the distance between the cathode and the anode will not cause uneven light emission. Therefore, the electron emission light emitting device of the present invention does not need to use a glass frame, but can directly use the sealant 250 to assemble the two substrates 218 and 208 together, thereby greatly reducing the overall thickness of the electron emission light emitting device. the

The gas 230 is filled between the anode 210 (fluorescent layer 240 ), the cathode 220 and the sealant 250 , and the gas 230 generates a proper amount of positively charged ions 204 after being subjected to an electric field, which induces the cathode 220 to emit a plurality of electrons 202 . It should be noted that the pressure of the environment where the gas 230 of the present invention exists is between 10 Torr (torr) and 10 ^-3 Torr (torr), preferably, the pressure is between 2×10 ^-2 Torr (torr). ) to 10 ^-3 Torr (torr), the size of the air pressure is related to the distance between the cathode and the anode. In addition, the gas 230 used in the present invention can be an inert gas, hydrogen (H ₂ ), carbon dioxide (CO ₂ ), oxygen (O ₂ ) or air with good electrical conductivity after dissociation, and the above inert gas includes helium (He), neon (Ne), argon (Ar), krypton (Kr) or xenon (Xe).

In addition to the embodiment shown in FIG. 1 , in order to improve the luminous efficiency, the present invention can also form an electron-generating material on the cathode to provide an additional electron source. The electron emission light-emitting device shown in FIG. 2 is similar to the light-emitting device in FIG. 1 , except that a secondary electron source material layer 222 is formed on the cathode 220 . The material of the secondary electron source material layer 222 can be magnesium oxide (MgO), terbium trioxide (Tb ₂ O ₃ ), dilanthanum trioxide (La ₂ O ₃ ), aluminum oxide (Al ₂ O ₃ ) or Cerium oxide (CeO ₂ ). Since the gas 230 will generate free ions 204, and the ions 204 are positively charged and will move away from the anode 210 and move toward the cathode 220, so when the ions 204 hit the secondary electron source material layer 222 on the cathode 220, additional Secondary Electronics 202'. More electrons (including the original electrons 202 and the secondary electrons 202 ′) interact with the fluorescent layer 240 to help increase the luminous efficiency. It is worth noting that the secondary electron source material layer 222 not only helps to generate secondary electrons, but also protects the cathode 220 from excessive bombardment by ions 204 .

In addition, the present invention can also choose to form a structure similar to the electron emission end of the field emission light source on one of the anode or the cathode or on both the anode and the cathode, so as to reduce the operating voltage on the electrode and generate electrons more easily. 4-6 respectively illustrate various electron emission light-emitting devices with induced discharge structures according to the present invention, wherein similar components are denoted by the same reference numerals, and the description of these components will not be repeated. the

The structure of the electron emission light-emitting device shown in FIG. 4 is similar to that of the light-emitting device in FIG. Microstructure composed of carbon nanowall, nanoporous carbon material (carbonnanoporous), columnar zinc oxide (ZnO), zinc oxide (ZnO) material, etc. In addition, the gas 230 is located between the anode 210 and the cathode 220 , and the fluorescent layer 240 is disposed on the surface of the anode 210 . The operating voltage between the anode 210 and the cathode 220 can be reduced by inducing the discharge structure 252 , and electrons 202 can be generated more easily. The electrons 202 interact with the fluorescent layer 240 to generate light. the

The electron emission light-emitting device shown in FIG. 5 is similar to that shown in FIG. 4 , the more obvious difference is that an induced discharge structure 254 is arranged on the anode 210 instead, and the induced discharge structure 254 is the same as the above, and can be Metal material, carbon nanotube (carbon nanotube), nano carbon wall (carbon nanowall), nanoporous carbon material (carbon nanoporous), columnar zinc oxide (ZnO), zinc oxide (ZnO) materials and other microstructures. In addition, the fluorescent layer 240 is disposed on the induced discharge structure 254 . the

FIG. 6 shows an electron emission light-emitting device with both induced discharge structures 254 and 252, wherein the induced discharge structure 254 is disposed on the anode 210, the fluorescent layer 240 is disposed on the induced discharge structure 254, and the induced discharge structure 252 It is arranged on the cathode 220 . The gas 230 is located between the anode 210 and the cathode 220 . the

The above-mentioned various electron emission light emitting devices with induced discharge structures 252 and/or 254 can also integrate the design of the secondary electron source material layer 222 as shown in FIG. Layer, if the induced discharge structure 254 has been formed on the cathode 220, the secondary electron source material layer can cover the induced discharge structure 254. In this way, not only can the working voltage between the anode 210 and the cathode 220 be lowered to make the generation of electrons 202 easier, but also the number of electrons 202 can be increased through the secondary electron source material layer to improve luminous efficiency. the

The electron emission light emitting devices described in the above embodiments are all planar light emitting devices, but the present invention is not limited thereto. In other embodiments, the electron emission light emitting device can also be in the form of a curved surface, as shown in Figure 7 and Figure 8. In the electron emission light emitting device of FIG. 7 and FIG. 8 , only the first substrate 218 , the second substrate 208 and the sealant 250 are shown and the film layers on the two substrates 218 and 208 are omitted for ease of illustration. In fact, the first substrate 218 and the second substrate 208 have been formed with the cathode, anode and fluorescent layer as described in the above embodiments. In other embodiments, there are also induced discharge structures and/or secondary electron source materials layer. In FIGS. 7 and 8 , the first substrate 218 and the second substrate 208 are non-planar substrates, but substrates with curvature. Therefore, the subsequent film layers formed on the first substrate 218 and the second substrate 208 will also bend along the curvature of the substrates. Therefore, after the two substrates are finally assembled together, a curved electron emission light emitting device can be formed. the

9A to 9C are schematic views of a packaging method of an electron emission light emitting device according to an embodiment of the present invention. Referring to FIG. 9A , firstly, an electron emission light emitting device is provided, which includes a first substrate 218 and a second substrate 208 . For convenience of illustration, FIG. 9A and FIG. 9B only show the first substrate 218 and the second substrate 208 and omit to show the film layers on the two substrates 218 and 208 . In fact, the first substrate 218 and the second substrate 208 have been formed with the cathode, anode and fluorescent layer as described in the above embodiments. In other embodiments, there are also induced discharge structures and/or secondary electron source materials layers and so on. the

Next, a sealant 250 is formed between the first substrate 218 and the second substrate 208 , and the sealant 250 has an opening 251 . As described in the previous embodiments, the sealant 250 may also contain spacers, and spacers may also be dispersed between the two substrates 218 , 208 . the

Afterwards, referring to FIG. 9B , the vent pipe 304 is installed in the opening 251 of the sealant 250 . The above-mentioned ventilation tube 304 is, for example, a glass tube. Next, the ventilation tube 304 is connected to the pipeline 320 , wherein the pipeline 320 is connected to the suction device 306 and to the filling gas device 308 . A valve 310 is also provided on the pipeline 320 between the ventilation pipe 304 and the air extraction device 306 , and a valve 312 is also provided on the pipeline 320 between the ventilation pipe 304 and the gas filling device 308 . the

Afterwards, a heating device 302 is installed around the electron emission light-emitting device to heat the electron emission light-emitting device. The heating device 302 is, for example, a coil resistance heating device, and the above-mentioned heating temperature is, for example, 200-400 degrees Celsius. Afterwards, the valve 210 is opened and the gas pumping device 306 is activated to pump out the gas in the electron emission light emitting device. After that, close the valve 310 and the pumping device 306 , then open the valve 312 and start the gas filling device 308 to fill the gas into the electron emission light emitting device. The above-mentioned gases are, for example, inert gases, hydrogen (H ₂ ), carbon dioxide (CO ₂ ), oxygen (O ₂ ) or air, etc., which have good electrical conductivity after dissociation. The above-mentioned inert gases include helium (He), neon ( Ne), argon (Ar), krypton (Kr) or xenon (Xe).

Finally, the vent tube 304 is blown off to seal the opening 251 of the sealant 250, as shown in FIG. 9C. The blown vent tube 304a will form a plug for sealing, so that the gas in the electron emission light emitting device cannot escape. In this way, the packaging of the electron emission light emitting device is completed. the

The cathode of the electron emission light-emitting device proposed by the present invention has a pattern design, so as to disperse the edge effect of the electric field between the two electrodes. Therefore, the uniformity of light emission of the electron emission type light-emitting device of the present invention is preferable. In addition, because the present invention can disperse the electric field edge effect between the two electrodes, even if the distance between the two electrodes is shortened, the uniformity of light emission will not be affected, thus reducing the overall thickness of the electron emission light emitting device. the

Although the present invention has been disclosed above with embodiments, it is not intended to limit the present invention. Any person skilled in the art may make some modifications and modifications without departing from the spirit and scope of the present invention. The scope of protection of the present invention should be defined by the claims. the

Claims (13)

1. electron emitting-type light emitting device comprises:

First substrate disposes negative electrode on this first substrate, and wherein this negative electrode has design;

Second substrate is positioned at the subtend of this first substrate, and disposes anode on this second substrate;

Fluid sealant is positioned at the edge of this first substrate and this second substrate, so that this first substrate and this second substrate in batch are fitted together;

Gas is disposed between this negative electrode and this anode, sends a plurality of electronics in order to induce this negative electrode, and wherein the air pressure of the existing environment of this gas is between 10 Bristols to 10 ^-3Bristol; And

Fluorescence coating is disposed on these movement of electrons paths, emitting beam with these electronic impact effects,

Wherein this first substrate has a plurality of dimpled grains, and is coated with conformal conductive layer on the surface of this first substrate to constitute this negative electrode.

2. electron emitting-type light emitting device as claimed in claim 1, wherein this negative electrode comprises conductive layer and is positioned at a plurality of conductive patterns on this conductive layer surface.

3. electron emitting-type light emitting device as claimed in claim 1 wherein is distributed with a plurality of first separation materials in the sealing glue.

4. electron emitting-type light emitting device as claimed in claim 1 also comprises a plurality of second separation materials, is distributed between this negative electrode and this anode.

5. electron emitting-type light emitting device as claimed in claim 1, wherein this first substrate and this second substrate are plane or curved surface.

6. electron emitting-type light emitting device as claimed in claim 1, wherein this fluorescence coating is positioned at this anode surface.

7. electron emitting-type light emitting device as claimed in claim 1, wherein this anode is made by transparent conductive material.

8. electron emitting-type light emitting device as claimed in claim 1, wherein the material of this anode or this negative electrode comprises metal.

9. electron emitting-type light emitting device as claimed in claim 1 also comprises the induced discharge structure, and it is disposed at this anode and this negative electrode at least on one of them.

10. electron emitting-type light emitting device as claimed in claim 9, wherein this induced discharge structure comprises metal material, CNT (carbon nano-tube), nano-sized carbon wall, nanoaperture carbon material, pillar shaped ZnO, zinc oxide material etc.

11. electron emitting-type light emitting device as claimed in claim 1 also comprises secondary electron source material layer, is disposed on this negative electrode.

12. electron emitting-type light emitting device as claimed in claim 11, wherein the material of this secondary electron source material layer comprises magnesium oxide, silicon dioxide, terbium sesquioxide, lanthanum sesquioxide, aluminium oxide or ceria.

13. electron emitting-type light emitting device as claimed in claim 1, wherein this gas comprises inert gas, hydrogen, carbon dioxide, oxygen or air.

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