CN101752400A - Image display device, image display system and manufacturing method thereof - Google Patents

Abstract

The invention discloses an image display device, an image display system and a manufacturing method thereof. An image display device having a display panel, the display panel comprising: a substrate having a light-emitting region and a non-light-emitting region; an interlayer dielectric layer disposed on the substrate; the reflecting layer is positioned in the light emitting area and is arranged on the interlayer dielectric layer; a flat layer disposed on the reflective layer and having a concave-convex surface corresponding to the reflective layer; a first electrode on the flat layer and having a concave-convex surface corresponding to the reflective layer; the pixel defining layer is positioned on the flat layer and exposes the concave-convex surface of the first electrode so as to define a light emitting area; and an electroluminescent layer and a second electrode sequentially stacked on the first electrode.

Description

Image display device, image display system and manufacturing method thereof

technical field

The present invention relates to a manufacturing technology of a display device, and in particular to an active-matrix type array substrate (active-matrix type array substrate) suitable for an electroluminescence display device.

Background technique

Electro-Luminescence display device such as organic light emitting diode display device (organic light emitting diode display device, OLED display device), because of its thin, light weight, high luminous efficiency of self-luminescence, low driving voltage and process Simple and other advantages, so it becomes one of the choices of a new generation of thin flat panel display devices. According to the driving method, it can be roughly divided into passive (PM-OLED) and active organic light emitting diode (AM-OLED) display devices.

In order to improve the image resolution of the OLED display device, it is necessary to improve the luminance of the display pixels.

Please refer to FIG. 1, Japanese Patent Laid-Open No. 2003-257662 discloses an electroluminescent display device, including an insulating substrate 10, a gate electrode 11, a gate insulating layer 12, an active layer 13 (including a channel region 13c, a drain region 13d and source region 13s), stop insulating layer 14, interlayer insulating layer 15, drain electrode 16, planarizing insulating layer 17, anode 22, hole transport layer 23, light emitting layer 24, electron transport layer 25 and cathode 26 and other main components.

Wherein, since the planarizing insulating layer 17 has a concave-convex surface, and the film layers such as the anode 22, the hole transport layer 23, the light emitting layer 24, the electron transport layer 25, and the cathode 26 are conformably formed on the planarizing insulating layer 20, thus These film layers also have a concave-convex film layer shape similar to the concave-convex surface of the planarizing insulating layer 17 . The light-emitting element formed by the film layers such as the anode 22, the hole transport layer 23, the light-emitting layer 24, the electron transport layer 25, and the cathode 26 with such a concave-convex film layer type contributes to the increase of its light-emitting area _S1 , and thus can Increases its luminosity.

However, the anode 22 shown in FIG. 1 is used as a reflective layer, and the arrangement of the hole transport layer 23 covering the anode 22 may cause high battery effect, causing corrosion at the edge of the anode 22. ). In addition, since the planarized insulating layer 17 has a concave-convex surface, there is abnormal film desorption between the anode 22 on the planarized insulating layer 17 and the planarized insulating layer 17 . The aforementioned two phenomena will degrade the reliability of the light emitting device.

In addition, please refer to FIG. 2, another electroluminescent display device disclosed in the document titled "A 20.8-inchWXGA Full Color AMOLED Display by integrating Scattering Reflector with Micro-Bumps" in SID 07DIGGEST, p173-176.

In FIG. 2 , the upper cover substrate 66, the substrate 50, and the sealing material 68 roughly define a space, in which display pixels can be arranged, and it consists of a thin film transistor 52, a micro-bumps (micro-bumps) layer 54, and a reflective layer 56. , flat layer 58, anode 60, luminescent layer 62 and cathode 64 and other main components, wherein the anode 60, luminescent layer 62 and cathode 64 constitute a light-emitting element, which forms emitted light 70 during operation, and passes through the reflective layer 56 Scattered light 72 is provided reflectively by function, thus helping to improve the light extraction efficiency of the display pixels.

Since the reflective layer 56 has a concave-convex film layer type, an additional process needs to be implemented to form a flat layer 58 thereon to facilitate subsequent fabrication of light-emitting element components. In addition, because the film layer of the light-emitting element is in the form of a flat film layer, its light-emitting area is relatively small, which is not conducive to the improvement of the light extraction efficiency and luminance of the display pixel.

Contents of the invention

According to an embodiment, the present invention provides an image display device, including a display panel, wherein the display panel includes:

The substrate includes a light-emitting area and a non-light-emitting area; an interlayer dielectric layer is arranged on the substrate; a reflective layer is located in the light-emitting area and is arranged on the interlayer dielectric layer; a flat layer is arranged on the reflective layer and has unevenness The shape surface corresponds to the reflective layer; the first electrode is located on the flat layer and has a concave-convex surface corresponding to the reflective layer; the pixel definition layer is located on the flat layer and exposes the concave-convex surface of the first electrode to define a light emitting area ; and the electroluminescent layer and the second electrode are sequentially stacked on the first electrode.

According to another embodiment, the present invention provides a method for manufacturing an image display device, comprising:

Forming an interlayer dielectric layer on the substrate, wherein the substrate includes a light-emitting area and a non-light-emitting area; forming a reflective layer on the light-emitting area and disposed on the interlayer dielectric layer; forming a flat layer on the reflective layer and having a concave-convex surface Corresponding to the reflective layer; forming a first electrode on the flat layer, and having a concave-convex surface corresponding to the reflective layer; forming a pixel definition layer on the flat layer, and defining a light-emitting area by exposing the concave-convex surface of the first electrode; And sequentially forming an electroluminescent layer and a second electrode on the first electrode.

According to yet another embodiment, the present invention provides an image display system, comprising:

The aforementioned image display device; and an input unit coupled to the image display device to control the image display device to display images.

In order to make the above and other objects, features, and advantages of the present invention more comprehensible, preferred embodiments, together with accompanying drawings, are described in detail below.

Description of drawings

Figure 1 shows a known electroluminescent display device;

Figure 2 shows another known electroluminescent display device;

3a-3f are a series of schematic diagrams respectively depicting the cross-sections of the display panel in different manufacturing stages according to the embodiment of the present invention; and

FIG. 4 is a schematic diagram illustrating an image display system according to an embodiment of the present invention.

Explanation of reference signs

10～insulating substrate; 11～gate electrode;

12～gate insulating layer; 13～active layer;

13c～channel region; 13d～drain region;

13s～source region; 14～stop insulating layer;

15～interlayer insulating layer; 16～drain electrode;

17～planarized insulating layer; 22～anode;

23～hole transport layer; 24～light-emitting layer;

25～electron transport; 26～cathode;

50～substrate; 52～thin film transistor;

54～micro-bump layer; 56～reflective layer;

58～flat layer; 60～anode;

62～light-emitting layer; 64～cathode;

66～top cover substrate; 68～sealing material;

70～emitted light; 72～scattered light;

100～display panel; 102～substrate;

104～buffer layer; 106～gate dielectric layer;

108～gate electrode; 110～interlayer dielectric layer;

112～an opening in the interlayer dielectric layer; 114a～conductive layer;

114b～reflective layer; 116～flat layer;

118～photoresist layer; 120～surface treatment process;

122～concavo-convex surface; 124～photoresist layer;

126～the opening in the photoresist layer; 128～the contact opening in the planar layer;

130～anode; 132～pixel definition layer;

134～electroluminescent layer; 136～cathode;

138～light-emitting direction; 140～light-emitting element;

150～thin film transistor; 300～image display device;

400～input unit; 500～image display system;

S ₁ ～luminous area; P～luminous area;

S/D ~ source/drain region.

Detailed ways

The image display device and its manufacturing method according to the present invention will be further described with reference to FIGS. 3 a - 3 f and the following, and it is applicable to the manufacture of display devices such as electroluminescence display devices.

According to the image display device of the present invention, the light out coupling efficiency and light extraction efficiency of the light emitting element can be improved by embossing the light emitting element and adding a reflective layer under the light emitting element. In addition, the configuration of the light-emitting element according to the present invention helps to reduce or even avoid the battery effect and possible corrosion of the anode and the reflective layer. This is beneficial to the improvement of the image resolution and service life of the image display system.

Please refer to the cross-sectional views of FIGS. 3a-3f to illustrate the manufacture of the display panel 100 of the image display device according to the embodiment of the present invention.

Please refer to FIG. 3 a , which shows a display panel (array panel) 100 with a substrate 102 . A buffer layer 104 and a thin film transistor 150 disposed on the buffer layer 104 are formed on the substrate 102 . The thin film transistor 150 includes a gate dielectric layer 106, two source/drain regions S/D, a channel region disposed between the source/drain regions S/D, and a gate electrode 108 disposed on the gate dielectric layer 106 . Here, the gate dielectric layer 106 is disposed on the entire substrate 102 and covers the buffer layer 104 . Next, the interlayer dielectric layer 110 is disposed on the thin film transistor 150 and the buffer layer 104 , so that the substrate 102 including the thin film transistor 150 has a substantially flat surface, which facilitates the implementation of subsequent processes.

The substrate 102 may include a transparent insulating material such as glass, plastic or ceramic. The thin film transistor 150 can be, for example, a low temperature polysilicon (LTPS), amorphous silicon (a-Si:H) or organic thin film (OTFT) transistor. The interlayer dielectric layer 110 may include insulating materials such as oxides, nitrides, carbides or combinations thereof.

Referring to FIG. 3b, two openings 112 passing through the interlayer dielectric layer 110 are then formed by photolithography and etching processes. These openings 112 respectively expose a part of each source/drain region S/D of the thin film transistor 150 . Then, a layer of conductive material is deposited on the top of the interlayer dielectric layer 110 , and the conductive material is filled into each opening 112 . Then, a plurality of patterned conductive layers 114 a and 114 b are formed on the interlayer dielectric layer 110 by photolithography and etching processes to pattern the conductive material. Wherein, the conductive layer 114 a is arranged substantially aligned with the source/drain region S/D and filled into the opening 112 , and further coupled with the source/drain region S/D of the thin film transistor 150 . The conductive layer 114b is then formed on a part of the substrate adjacent to the conductive layer 114a to serve as a reflective layer (hereinafter referred to as the reflective layer 114b), which does not cover the thin film transistor 150, has a flat surface, and is compatible with the conductive layer 114a. The layers 114a are electrically insulated. The material of the reflective layer 114b is, for example, an opaque material with high reflectivity such as aluminum, silver, magnesium, palladium, platinum or an alloy containing a small amount of one or more than one other element, and its light reflectivity is preferably higher than 80. %.

Referring to FIG. 3c, a flat layer 116 is formed on the conductive layer 114a and the reflective layer 114b. The flat layer 116 can be formed by, for example, spin coating. The material of the planarization layer 116 is a dielectric material such as spin on glass (SOG). Next, a photoresist layer 118 is formed on the flat layer 116, and an opening OP1 is formed in the photoresist layer 118 through photolithography and development processes. The portion of planar layer 116 above layer 114b. Then perform a surface treatment process 120, using the photoresist layer 118 as a mask, and then surface treat the surface of the flat layer 116 exposed by the photoresist layer 118, and roughen it to form a concave-convex surface 122 . The above-mentioned surface treatment process 120 can be, for example, a plasma etching process or a plasma etching process with a suitable mask.

Please refer to FIG. 3d, after removing the photoresist layer 118, another photoresist layer 124 is then formed on the flat layer 116, and through photolithography and development processes, in the photoresist layer 124 Another opening 126 is formed. The opening 126 penetrates the photoresist layer 124 and is generally aligned with one of the source/drain regions S/D of the thin film transistor 150, for example, the opening 126 is generally aligned with the source/drain adjacent to the reflective layer 114b District S/D. Next, perform an etching process, such as a dry etching process, using the photoresist layer 124 as an etching mask to etch away the interlayer dielectric layer 116 exposed by the opening 126 and expose a part of the conductive layer 114a, and then planar Contact openings 128 are formed in layer 116 . That is, the contact opening 128 penetrates the planarization layer 116 .

的厚度，以提供大于50％的透光率。另外，阳极130的导电材料可通过溅镀法、电子束蒸镀法、热蒸镀法、化学气相镀膜法及喷雾热裂解法所形成。Please refer to FIG. 3e, after removing the photoresist layer 124, a layer of conductive material is then formed on the surface of the planar layer 116, the above-mentioned conductive material is conformably formed on the planar layer 116 and filled into the contact opening 128, the entity The contact is the conductive layer 114 a exposed by the contact opening 128 . Then, photolithography and etching processes are performed to pattern the layer of conductive material, and the conductive material is left on a part of the surface of the planar layer 116 to serve as the anode 130 of the light emitting element. The anode 130 substantially covers the wavy surface 122 of the flat layer 116 , so that the anode 130 also has a concave-convex surface corresponding to the wavy surface 122 of the flat layer 116 . In addition, the anode 130 fills into the contact opening 128 and electrically contacts the source/drain region S/D of the thin film transistor 150 by being coupled with the conductive layer 114 a. Here, the conductive material included in the anode 130 is, for example, metal materials such as aluminum, silver, magnesium, palladium, platinum, or indium tin oxide (ITO), indium zinc oxide (IZO), aluminum zinc oxide (AZO) Or light-transmitting materials such as metal oxides of zinc oxide (ZnO), which can be used alone or in combination. When the anode 130 uses metal materials such as aluminum, silver, magnesium, palladium, platinum, etc., it preferably has a thickness of 5 to 200 angstroms.

thickness to provide greater than 50% light transmittance. In addition, the conductive material of the anode 130 can be formed by sputtering, electron beam evaporation, thermal evaporation, chemical vapor deposition and spray pyrolysis.

Next, a pixel definition layer 132 is conformally formed on the anode 130, and its material is, for example, silicon oxide, silicon nitride, silicon nitride oxide, organic non-conductive polymer or a combination thereof, and can be deposited by physical vapor deposition, chemical vapor deposition, etc. Formed by manufacturing method and spin-coating method. Next, through photolithography and etching processes and in conjunction with the use of a photoresist pattern (not shown), the pixel definition layer 132 is patterned to expose the concave-convex surface of the anode 130, thereby defining the light emitting region P, and the light emitting region The area other than P is a non-luminous area. That is, according to FIG. 3e , the reflective layer 114b is only disposed in the light-emitting region P, while the thin film transistor 150 and the conductive layer 114a are disposed in the non-luminous region, wherein the reflective layer 114b and the conductive layer 114a are insulated by the flat layer 116 .

Please refer to FIG. 3f, and then a layer of electroluminescent material and a layer of conductive material are sequentially formed on the pixel definition layer 132 and the anode 130, and through photolithography and etching processes, so as to expose the light emitting region P On the anode 130 and on part of the pixel definition layer 132 adjacent to the light-emitting region P, a stacked electroluminescent layer 134 and a cathode 136 are formed, wherein the anode 130, the electroluminescent layer 134 and the cathode 136 formed thereon constitute a light-emitting element 140, wherein both the electroluminescent layer 134 and the cathode 136 have concave-convex surfaces corresponding to the reflective layer 114b. Reference numeral 138 represents the main light emitting direction of the light emitting element 140 , which is a direction away from the substrate 102 .

The electroluminescent layer 134 may include organic or inorganic materials, such as small molecule materials, polymer materials or organometallic complexes, which may be formed by thermal vacuum evaporation, spin coating, inkjet or screen printing, etc. , and the conductive material of the cathode 136 is a metal material such as aluminum, silver, magnesium, palladium, platinum, or a light-transmitting material such as indium tin oxide, indium zinc oxide, aluminum zinc oxide or zinc oxide metal oxide, They can be used alone or in combination, and can be formed by sputtering or evaporation.

As shown in FIG. 3f, the anode 130, the electroluminescent layer 134, and the cathode 136 in the light-emitting element 140 all have a concave-convex film layer type, and a reflective layer with a flat surface is correspondingly provided under the light-emitting element 140. 114b. Through such an arrangement, it is helpful to improve the light coupling efficiency, light extraction efficiency, luminous brightness and viewing angle of the light emitting element 140 in the main light emitting direction 138 .

In addition, the light emitting layer 134 is partially disposed on the pixel definition layer 132 without covering the edge of the anode 130 below it, and it is not connected with the reflective layer 114b. Therefore, the arrangement of the electrodes in the light-emitting element 140 does not cause a battery effect, and does not encounter unexpected electrode damage as shown in FIG. 1 , which can improve the reliability of the display device as shown in FIG. 3f.

Furthermore, since the reflective layer 114b is buried between the planar layer 116 and the interlayer dielectric layer 110, it will not experience undesired desorption of the film layer as shown in FIG. 1, which can improve the application of the display device shown in FIG. 3f reliability.

In addition, since the reflective layer 114b can be formed simultaneously with the conductive layer 114a coupled to the source/drain region S/D, and is covered by the planar layer 116 at the same time, it is not necessary to use additional process steps to form as shown in FIG. The reflective layer and the flat layer help to simplify the manufacturing method of the array substrate.

FIG. 4 illustrates an image display system 500 , which includes main components such as an image display device 300 and an input unit 400 . Wherein, the image display device 300 includes the display panel 100 as shown in FIG. 3f, and is suitable for the application of various electronic devices (shown as the image display system 500 here). Furthermore, the input unit 400 can be coupled with the image display device 300 to provide appropriate signals (such as image signals) to the image display panel 300 to generate images. The image display system 500 is, for example, a mobile phone, a digital camera, a personal digital assistant PDA, a notebook computer, a desktop computer, a television, a car monitor, a portable DVD player, a global positioning system, a digital photo frame or a navigation screen, etc. electronic device.

Although the present invention has been disclosed above with preferred embodiments, it is not intended to limit the present invention. Any person skilled in the art may make various changes and modifications without departing from the spirit and scope of the present invention. Therefore, the present invention The scope of protection of the invention shall prevail as defined by the appended claims.

Claims (10)

1. an image display comprises display floater, and this display floater comprises:

Substrate comprises luminous zone and non-light-emitting area;

Interlayer dielectric layer is arranged on this substrate;

The reflector is positioned at this luminous zone, and is arranged on this interlayer dielectric layer;

Flatness layer is arranged on this reflector, and has concavo-convex surface corresponding to this reflector;

First electrode is positioned on this flatness layer, and has concavo-convex surface corresponding to this reflector;

Pixel defining layer is positioned on this flatness layer, and exposes this concavo-convex surface of this first electrode, to define this luminous zone; And

The electroluminescence layer and second electrode are stacked on this first electrode in regular turn.

2. image display as claimed in claim 1 also comprises:

Thin-film transistor has source/drain regions, and is positioned at this non-light-emitting area, and is arranged under this interlayer dielectric layer; And

Conductive layer is positioned at this non-light-emitting area, and is arranged on this interlayer dielectric layer, wherein this interlayer dielectric layer has first opening, this conductive layer couples this source/drain regions by this first opening, and this flatness layer has second opening, and this first electrode couples this conductive layer by this second opening.

3. image display as claimed in claim 2, wherein this conductive layer and this reflector comprise same material.

4. image display as claimed in claim 1, wherein this first electrode is an anode, this second electrode is a negative electrode, and this first electrode, this electroluminescence layer and this second electrode constitute electroluminescence element.

5. image display as claimed in claim 1, wherein this reflector has flat surfaces.

6. the manufacture method of an image display comprises:

Form interlayer dielectric layer on substrate, wherein this substrate comprises luminous zone and non-light-emitting area;

Form the reflector in this luminous zone, and be arranged on this interlayer dielectric layer;

Form flatness layer on this reflector, and have concavo-convex surface corresponding to this reflector;

Form first electrode on this flatness layer, and have concavo-convex surface corresponding to this reflector;

Form pixel defining layer on this flatness layer, and by exposing this concavo-convex surface of this first electrode, to define this luminous zone; And

Form the electroluminescence layer and second electrode in regular turn on this first electrode.

7. the manufacture method of image display as claimed in claim 6 also comprises:

Form thin-film transistor in this non-light-emitting area, and be arranged under this interlayer dielectric layer; And

Form conductive layer in this non-light-emitting area, and be arranged on this interlayer dielectric layer, wherein, this interlayer dielectric layer has first opening, by this first opening, couple the source/drain regions of this conductive layer and this thin-film transistor, and this flatness layer has second opening, this first electrode couples this conductive layer by this second opening.

8. the manufacture method of image display as claimed in claim 7, wherein this conductive layer and this reflector form simultaneously and are insulated by this flatness layer.

9. the manufacture method of image display as claimed in claim 6, wherein the concavo-convex surface of this of this flatness layer forms via process of surface treatment.

10. image display system comprises:

Image display as claimed in claim 1; And

Input unit couples this image display, to control this image display show image.

Images