CN101652719A - Exposure method and electronic device manufacturing method - Google Patents
Exposure method and electronic device manufacturing method Download PDFInfo
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- CN101652719A CN101652719A CN200880011418A CN200880011418A CN101652719A CN 101652719 A CN101652719 A CN 101652719A CN 200880011418 A CN200880011418 A CN 200880011418A CN 200880011418 A CN200880011418 A CN 200880011418A CN 101652719 A CN101652719 A CN 101652719A
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Abstract
An exposure method enabling deformation occurring in a unit exposure field (10f) to be measured rapidly and accurately and enabling a plurality of patterns to be superimposed on a substrate (W) with high accuracy. The exposure method of the present embodiment for exposing a bright-dark pattern on the substrate (W) using a projection optical system (PL) includes a position detection process (S13) for detecting the positions of a plurality of position detection marks, relative to a substrate-in-plane-direction of the substrate (W), arranged in at least one functional element in a unit exposure field (10f) of the substrate (W), a deformation calculation process (S14) for calculating the state of deformation occurring in the unit exposure field (10f ) based on information related to the positions of the position detection marks obtained in the position detection process (S13), and a shape modification process (S15) for modifying the shape of the bright-dark pattern to be exposed on the substrate (W) based on the deformation state obtained in the deformation calculation process (S14).
Description
The cross reference of related application
The application requires to enjoy in No. the 60/907th, 595, U.S. Provisional Patent Application submitting on April 10th, 2007 and the right of priority of the non-temporary patent application of the U.S. (still unallocated application number) submitted on February 27th, 2008.
Technical field
Embodiments of the invention relate to a kind of exposure method and electronic device manufacturing method.More particularly, embodiments of the invention relate at the employed exposure method of photoetching process that is used for making such as the electron device of semiconductor devices, image device, liquid crystal display device and thin-film head.
Background technology
In the technology of the device that is used for Production Example such as semiconductor devices, go up and form the multilayer circuit pattern being coated with the wafer of the photosensitive material substrate of glass plate (or such as).Require exposure device to be formed with the mask of the pattern (pattern transferring) that will be transferred on it and to be formed with the wafer aligned of circuit pattern on it.Exposure device comprises the aligned units that is used for this aligning, and this aligned units for example can be the imaging-type aligned units.
The alignment mark (wafer mark) that the optical illumination that the utilization of imaging-type aligned units is sent from light source forms at wafer.Then, this aligned units utilizes imaging optical system to form the picture of the amplification of wafer mark on image device, and the imaging signal that is obtained is carried out Flame Image Process to detect the position of wafer mark.
Usually, on single wafer, define a plurality of unit exposure field in the following manner: these unit exposure field are arranged as matrix.By single exposure operation (for example, once (one-shot) exposing operation or scan exposure operation) in each unit exposure field, form with such as the corresponding circuit pattern of function element of LSI (integrated on a large scale) circuit etc.More particularly, exposure device carries out exposing operation over and over again to single unit exposure field when wafer is moved with respect to the projection optical system stepping.As a result, one or more alignment mark is transferred on each unit exposure field with one or more LSI circuit pattern.
Traditional position detecting device comprises single position detecting mechanism (for example, aligming microscope) or X position detecting mechanism and the Y position detecting mechanism arranged individually.In the wafer processing procedure that comprises etching and film forming, the wafer of the exposing patterns internal strain of may meeting thereon.More particularly, because processing of wafers etc., wafer may take place on the whole or the size on the part enlarges or dwindles from its original shape.
Exposed the enterolithic enhancement mode global alignment of face (EGA) that has proposed to be used to proofread and correct the wafer relevant and this distortion of the wafer of processing of wafers in order to tackle with the arrangement of unit exposure field.In order to tackle the linear deformation of each unit exposure field, or more particularly, the expansion of each unit exposure field of representing by the linear function of the normal coordinates of position in the face that uses each unit exposure field of expression or X coordinate and Y coordinate, dwindle and rotate, proposed to be used to proofread and correct the multiplying power bearing calibration of multiplying power of projection optical system and the mask spinning solution that is used to rotate mask.
Summary of the invention
In recent years, the LSI circuit pattern is by further miniaturization.As a result, requirement is overlapped on substrate with higher accuracy with pattern.Therefore, in future, exposure device will have to tackle the high-level deformation that takes place in unit exposure field, yet not consider this distortion in conventional art." high-level deformation " is meant the high-order distortion that can not be represented by the linear function that uses X coordinate and Y coordinate, or more particularly, by the distortion of higher-order function (for example, quadratic function or the cubic function) expression of using X coordinate and Y coordinate.
This high-level deformation in the pin-point accuracy ground measuring unit exposure field for example, must detect the position of the many marks that form discretely in the unit exposure field.The traditional location pick-up unit that comprises single position detecting mechanism or two position detecting mechanisms is the position of certification mark sequentially, therefore spends the plenty of time in order to detect each mark position.This has reduced the turnout (processing power) of exposure device, and makes and to be difficult to keep sufficiently high throughput rate.
In conventional art, in the peripheral part of each unit exposure field (inside part that extends along the profile border of each unit exposure field), form alignment mark, make LSI circuit design degree of freedom not influenced by alignment mark.Except the peripheral part of unit exposure field or as the substituting of the peripheral part of unit exposure field, when in single unit exposure field, forming a plurality of LSI circuit pattern, can between two adjacent LSI circuit patterns, form alignment mark.
The quantity of the LSI circuit pattern in each unit exposure field depends on the type of LSI circuit, but mostly is 12 most.For example, will be altogether 12 LSI circuit patterns be arranged on the directions X being 3 row and when being 4 row on the Y direction, in conventional art, form position detection marks in 4 discrete positions on the directions X and 5 discrete positions on the Y direction.In this case, the distribution of position detection marks is too sparse.Therefore, be difficult to pin-point accuracy ground and measure the distortion, the particularly distortion that in the LSI circuit pattern, takes place that in unit exposure field, takes place.
Purpose provides a kind of exposure method that makes it possible to measure the distortion that takes place quickly and accurately in unit exposure field and make it possible to pin-point accuracy ground overlapping pattern on substrate according to an embodiment of the invention.
A first aspect of the present invention provides a kind of projection optical system of using with expose exposure method on the unit exposure field of substrate of LO-pattern.This method comprises: the position probing step, utilization comprises the position detecting system of a plurality of benchmarings position in the scope that a unit exposure field in the described unit exposure field that drops on described substrate equates haply, detects a plurality of position detection marks at least one unit exposure field about the position of direction in the face of described substrate.The The deformation calculation step is calculated the state of the distortion in described at least one unit exposure field based on the information relevant with positions described a plurality of position detection marks that obtain in described position probing step.The alteration of form step is based on the deformation state that obtains in described The deformation calculation step, the shape of the LO-pattern that modification will expose on described substrate.The position detection marks that detects in described position probing step is arranged at least one included in described at least one unit exposure field on described substrate function element.
Hereinafter, " unit exposure field " is meant and is defined as operating by single exposure the unit exposure field that (for example, single exposure operation or scan exposure operation) forms the unit on the substrate of LO-pattern therein.
A second aspect of the present invention provides a kind of method of making electron device, and this method comprises photoetching process.In described photoetching process, use the exposure method of first aspect.
In exposure method according to an embodiment of the invention, use for example detect drop on substrate on the scope that equates haply of defined unit exposure field in the position detecting system (one or more position detecting mechanism) of a plurality of positions detect at least one function element of unit exposure field the interior direction position of real estate of a plurality of position detection marks that (more particularly, with the corresponding pattern of this function element in) form.Based on information, calculate the state of the distortion that in described unit exposure field, takes place about described a plurality of positions.In other words, based on the distortion of measuring the existing pattern that in described unit exposure field, forms about the described information pin-point accuracy ground of the described a plurality of positions in the described unit exposure field.
In an embodiment according to the present invention, be modified in the accuracy that the shape of the LO-pattern of exposing on the substrate improves overlapping pattern on substrate accordingly by distortion with the existing pattern that in unit exposure field, forms.By this way, exposure method makes it possible to measure the distortion that takes place quickly and accurately based on a plurality of position detection marks that form with predetermined distribution in unit exposure field according to an embodiment of the invention.Therefore, pattern by pin-point accuracy overlap on the substrate.As a result, exposure method makes it possible to make accurately electron device according to an embodiment of the invention.
Description of drawings
The general framework of realizing various features of the present invention is now described with reference to the accompanying drawings.Provide accompanying drawing and associated description to come the illustration embodiments of the invention, and do not limit the scope of the invention.
Fig. 1 illustrates the synoptic diagram that is used to carry out according to the exposure device of the exposure method of the embodiment of the invention;
Fig. 2 is the synoptic diagram that the inside of the position detecting system shown in Fig. 1 is shown;
Fig. 3 is the synoptic diagram that the inside of each position detecting mechanism in the position detecting system shown in Fig. 1 is shown;
Fig. 4 is the synoptic diagram as the secondary imaging refraction and reflection projection optical system of an example of the projection optical system shown in Fig. 1;
Fig. 5 is the synoptic diagram that the inside of the optical surface shape modification unit shown in Fig. 1 is shown;
Fig. 6 is the process flow diagram of illustration according to the exposure sequence of the exposure method of the embodiment of the invention;
Fig. 7 is the synoptic diagram that the unit exposure field of the wafer that wherein is formed with a plurality of LSI circuit patterns and a plurality of position detection marks is shown;
Fig. 8 is the synoptic diagram that is illustrated in a plurality of position detection marks that form in the fringe region of circuit pattern of system LSI circuit;
Fig. 9 is the synoptic diagram that is illustrated in a plurality of position detection marks that form in the fringe region included in the circuit pattern of flash memory;
Figure 10 is the synoptic diagram that the position detecting system of modified example according to the present invention is shown;
Figure 11 is the synoptic diagram that the position detecting system of another modified example according to the present invention is shown;
Figure 12 is the process flow diagram that illustration is made the method for semiconductor devices; And
Figure 13 is the process flow diagram that illustration is made the method for liquid crystal display device.
Embodiment
Embodiments of the invention are now described with reference to the accompanying drawings.Fig. 1 is the synoptic diagram of the structure of the exposure device that uses when being illustrated in the exposure method that carries out according to the embodiment of the invention.In Fig. 1, X-axis and Y-axis with plane that the surface (exposed) of wafer W parallels in orthogonal, and the Z axle extends along the normal to a surface direction of wafer W.More particularly, XY planar horizontal ground extends and (+) Z axle vertically extends upward.
Exposure device shown in Fig. 1 comprises such as the exposure light source of ArF excimer laser and the lighting unit 1 that comprises optical integrator (homogenizer), field stop and collector lens.The exposure light IL that lighting unit 1 utilization is sent from light source throws light on, and it is formed with mask (graticule) M of the pattern that will be transferred.Lighting unit 1 for example the throw light on whole rectangular patterns field of mask M or the elongate slit district (for example, rectangle region) of in whole pattern field, extending along directions X.
Light from the pattern of mask M is incident on the projection optical system PL with predetermined reduction magnification.Form the pattern image (LO-pattern) of mask M in the defined unit exposure field of projection optical system PL on being coated with the wafer of photoresist (sensitive substrate) W.More particularly, projection optical system PL in each unit exposure field of wafer W optically to mask M on corresponding, the similar rectangle region of illuminated field (visual field) to the whole pattern field of mask M in or in the elongated rectangular district (static exposure field) of extending along directions X formation mask pattern picture.
Mask platform MS supports mask M according to the mode that makes mask M and XY plane parallel.Mask platform MS is equipped with and is used to make mask M in directions X, Y direction and the mechanism that moves slightly about the sense of rotation of Z axle.Mask platform MS comprises removable mirror (not shown).Utilize the mask laser interferometer (not shown) that uses this removable mirror to measure X position, Y position and the position of rotation of mask platform MS (and mask M) in real time.
Wafer retainer (not shown) is supported in wafer W on the Z platform 2 according to the mode that makes wafer W and XY plane parallel.Z platform 2 is fixed on the XY platform 3.XY platform 3 is along moving with the XY plane that parallels haply as the plane of projection optical system PL.Z platform 2 is adjusted the pitch angle (surface of wafer W is with respect to the inclination on XY plane) of focal position (Z direction position) and wafer W.Z platform 2 comprises removable mirror 4.Measured X position, Y position reach the position of rotation about the Z axle in real time to utilize the wafer laser interferometer 5 that uses removable mirror 4.XY platform 3 is installed on the pedestal 6.XY platform 3 is adjusted X position, Y position and the position of rotation of wafer W.
The output of mask laser interferometer and the output of wafer laser interferometer 5 are offered master control system 7.Master control system 7 is based on X position, Y position and the position of rotation of the value control mask M that is recorded by the mask laser interferometer.More particularly, the mechanism of master control system 7 in being installed in mask platform MS transmits control signal.X position, Y position and position of rotation that this mechanism adjusts mask M by based on this control signal mask platform MS being moved slightly.
When using the stepping duplicated system, the pattern image of mask M is exposing to by on the unit exposure field in a plurality of unit exposure field of matrix arrangements on wafer W.Thereafter, master control system 7 transmits control signal to wafer station drive system 8, and uses wafer station drive system 8 that XY platform 3 is moved along the stepping of XY plane, so that another unit exposure field of wafer W is aimed at projection optical system PL.By this way, repeat the pattern image of mask M is exposing on the unit exposure field of wafer W.
In the step-scan system, the mechanism of master control system 7 in being installed in mask platform MS transmits control signal, and transmits control signal to wafer station drive system 8.This make mask platform MS and XY platform 3 with according to the projection multiplying power of projection optical system PL and definite speed than when moving, scanning mask M also exposes its pattern image on the single unit exposure field on wafer W.Thereafter, master control system 7 transmits control signal to wafer station drive system 8, and uses wafer station drive system 8 that XY platform 3 is moved along the stepping of XY plane, so that another unit exposure field of wafer W is aimed at projection optical system PL.By this way, the pattern image that repeats mask M is operated to the scan exposure on the unit exposure field of wafer W.
More particularly, utilize the step-scan system, in the position of control mask M such as wafer station drive system 8, wafer laser interferometer 5 and wafer W, make mask platform MS and XY platform 3 (so mask M and wafer W) along as the Y direction of the short side direction of the static exposure field of rectangle (being generally slit-shaped) mobile (being scanned) synchronously with one another.As a result, scanning obtains mask pattern and this mask pattern and is exposed on the corresponding zone of scanning amount (amount of movement) that width on the wafer W equals the long limit of static exposure field and length and wafer W.
Measure distortion that takes place and the overlapping accuracy that improves the pattern that forms on wafer W for pin-point accuracy ground in each unit exposure field of wafer W, exposure device as shown in Figure 1 comprises position detecting system 10, The deformation calculation unit 11 and optical surface shape modification unit 12.Position detecting system 10 detects a plurality of positions in each unit exposure field of wafer W under the situation of not using projection optical system PL.The testing result of The deformation calculation unit 11 position-based detection systems 10 is calculated the state of the distortion that takes place in each unit exposure field of wafer W.In order to proofread and correct the shape of the pattern image (LO-pattern) that is exposed on the wafer W, optical surface shape modification unit 12 is revised the shape of at least one optical surface of projection optical system PL based on the result of calculation of The deformation calculation unit 11.
As shown in Figure 2, position detecting system 10 comprises a plurality of position detecting mechanisms of arranging two-dimensionally with parallel arrangement along the XY plane.In order to simplify accompanying drawing, Fig. 2 only illustrates 5 position detecting mechanism 10a, 10b, 10c, 10d and 10e in a plurality of position detecting mechanisms that form position detecting system 10. Position detecting mechanism 10a, 10b, 10c, 10d and 10e are the zigzag layout or are arranged in parallel.Zigzag arrange be meant position detecting mechanism from the straight line that extends along directions X alternately to+Y direction and-the Y direction arranges.Fig. 2 shows two adjacent lines,, comprises first line of position detecting mechanism 10a, 10c and 10e and second line that comprises position detecting mechanism 10b and 10d that is.The skew of position detecting mechanism 10a, 10c and 10e edge+Y direction, and with arranged at predetermined intervals on first line.The skew of position detecting mechanism 10b and 10d edge-Y direction, and with arranged at predetermined intervals on second line.The benchmaring position 10aa to 10ea of 5 position detecting mechanism 10a to 10e drops in the rectangular extent 10f that equates haply with a unit exposure field of wafer W.In Fig. 2, by center, the benchmaring position of each position detecting mechanism among the position detecting mechanism 10a to 10e of cross mark indication at the detection zone of each position detecting mechanism.In the present embodiment, the benchmaring position that forms the position detecting mechanism of position detecting system 10 is all dropped in the regional 10f.
From the reflected light (comprising diffraction light) of the illumination light of position detection marks PM by first object lens 33, half prism 32 and second object lens 34, on the imaging plane of imaging device 35 that can be ccd video camera, to form the picture of position detection marks PM.More particularly, the photoelectric detector (optical detecting unit) of the picture of the position detection marks PM that forms by the imaging optical system that comprises first object lens 33 and second object lens 34 as Photoelectric Detection of ccd video camera 35.
The testing result of The deformation calculation unit's 11 position-based detection systems 10 (that is, the positional information of a plurality of position detection marks PM that form in the unit exposure field of wafer W (a plurality of position probing value)) is calculated the state of the distortion that takes place in unit exposure field.More particularly, The deformation calculation unit 11 detects each position detection marks PM of forming positional offset amount with respect to the reference position of correspondence in the unit exposure field of wafer W.Based on the information about the positional offset amount of each position detection marks PM, The deformation calculation unit 11 utilizes the nonlinear function that for example uses X coordinate and the definition of Y coordinate, is similar to the distortion that takes place in unit exposure field.
Here suppose that the high-level deformation that takes place represented by the higher-order function that uses X coordinate and Y coordinate in unit exposure field.The coordinate of the design attitude of indicating positions certification mark PM (hereinafter being called " design load ") is by (Dxn, Dyn) expression.The indication actual detected to position detection marks PM the position coordinate (hereinafter being called " measured value ") by (Fxn, Fyn) expression.The reason of the position deviation between variable factor a to f (single order variable elements) and variable factor g to j (high-order variable elements) indication design load and the measured value.In this case, the relation between measured value and the design load is represented by the formula that illustrates below (1).In formula (1), n is the integer of indication to the given numbering of each position detection marks PM of forming in unit exposure field.
Yet, design load (Dxn, Dyn) with actual measured value (Fxn, Fyn) between location bias or residual error item (Exn, Eyn).Therefore, actual measured value and the relation between the design load of considering the residual error item represented by formula (2).
X element in the formula (2) can be suc as formula represent (3).
Exn＝Fxn-(aDxn+bDyn+e+gDxn
2+iDxn
3)…(3)
In the same way, the y element in the formula (2) can be suc as formula represent (4).
Eyn＝Fyn-(cDxn+dDyn+f+hDyn
2+jDyn
3)…(4)
For example utilize least square method so that the minimized mode of the quadratic sum of residual error item is determined each variable elements.By this way, can use higher-order function to be similar to the distortion that in unit exposure field, takes place.
Above-mentioned approximate use divalent element that utilizes higher-order function or three rank elements are as higher order element.Yet this is approximate can also to use quadravalence element or higher order element more.Can also utilize function system to be similar to the distortion that in unit exposure field, takes place with polar coordinate representation.In this case, can use the series expansion of launching such as Zernike to represent the wave front aberration of optical system.
The reference position of each position detection marks PM is its design attitude or is forming its physical location of measuring immediately after the position detection marks PM before the processing of wafers.The distortion that approximation to function takes place in the unit exposure field of wafer W that utilizes of using The deformation calculation unit 11 to carry out is equal to the distortion that takes place in the available circuit pattern that utilizes approximation to function to form in the unit exposure field of wafer W.
Optical surface shape modification unit 12 is used for revising by the shape of at least one optical surface of revising projection optical system PL the aberration of projection optical system PL.Hereinafter, the secondary imaging refraction and reflection projection optical system PL shown in Fig. 4 will be with the example that acts on the detailed structure of describing optical surface shape modification unit 12.Projection optical system PL among Fig. 4 comprises catadioptric type first imaging optical system G1 and the refractive second imaging optical system G2.The first imaging optical system G1 forms the intermediary image of the pattern of mask M.The second imaging optical system G2 is based on the picture that finally dwindles that forms mask pattern from the light of intermediary image on wafer W.
To be arranged in from mask M as the level crossing M1 of for example deformable mirror and extend to the light path of the first imaging optical system G1.In addition, will be arranged in from the first imaging optical system G1 as the level crossing M2 of for example deformable mirror and extend to the light path of the second imaging optical system G2.With the reflecting surface of level crossing M1 be positioned at mask M near.With the reflecting surface of level crossing M2 be arranged in intermediary image form the position or be positioned at intermediary image form the position near.As shown in Figure 5, level crossing M1 comprise the reflecting member M1a that for example has reflecting surface and with the corresponding a plurality of driving element M1b that arrange adjacent to each other with two-dimensional approach of the reflecting surface of reflecting member M1a.In the same way, level crossing M2 comprise reflecting member M2a with reflecting surface and with the corresponding a plurality of driving element M2b that arrange adjacent to each other with two-dimensional approach of reflecting member M2a.
Except level crossing M1 and level crossing M2, optical surface shape modification unit 12 also comprises by shared mirror substrate 12a of level crossing M1 and level crossing M2 and the driver element 12b that drives a plurality of driving element M1b and M2b individually.Driver element 12b drives driving element M1b and driving element M2b individually based on the control signal that the master control system 7 from the output that receives The deformation calculation unit 11 provides.Driving element M1b and driving element M2b invest on the public mirror substrate 12a.Driving element M1b and driving element M2b operate the shape that the Shape Modification of the reflecting surface of reflecting member M1a and reflecting member M2a is become expectation by push-and-pull independently.
By this way, optical surface shape modification unit 12 makes the reflecting surface of the level crossing M1 the object plane that is arranged in projection optical system PL near and is arranged at least one warpage in the reflecting surface with the level crossing M2 of the position of the object plane optical conjugate of projection optical system PL or near the position this conjugate position, perhaps it is made amendment.The distortion that this revises the aberration state of projection optical system PL and generates projection optical system PL on one's own initiative.As a result, optical surface shape modification unit 12 is revised the shape of the mask pattern picture (LO-pattern) on the unit exposure field that is exposed to wafer W.
Fig. 6 is the process flow diagram of the exposure sequence of schematically illustrated exposure method according to the embodiment of the invention.For the ease of understanding the present invention, the exposure method that hereinafter will suppose present embodiment is used to utilize the exposure device of Fig. 1 the pattern of mask M to be exposing to each unit exposure field of wafer W.With reference to Fig. 6, in the exposure method of present embodiment, there is the wafer W of one or more circuit pattern and subject wafer processing to be loaded into (S11) on the Z platform 2 with having exposed on it.Then, wafer W is aimed at (S12) with projection optical system PL (and mask M).
In registration process S12, based on the relevant information such as profile of wafer W, drive XY platform 3 as required.This is with wafer W and projection optical system PL prealignment (aiming at roughly).In registration process S12, use the position detecting system shown in Fig. 1 for example 10 to detect the position of a plurality of wafer alignment marks that on wafer W, form, and position-based information, drive XY platform 3 as required.This aims at wafer W with projection optical system PL (accurately aiming at) subtly.Can detect wafer W to be aimed at projection optical system PL (reaching mask M) in handling by the follow-up location that in step S13, carries out and remove registration process S12.
For alignment wafer W subtly, can use one or more position detection marks of from a plurality of position detection marks PM that unit exposure field, form that will describe after a while, selecting as the detected a plurality of wafer alignment marks in its position.In registration process S12, projection optical system PL with the mask M that is formed with pattern transferring on it with its on be formed with circuit pattern wafer W aim at optically, thereby the pattern field on the mask M is aimed at optically with the unit exposure field on the wafer W.
As shown in Figure 7, in each unit exposure field of the wafer W on being loaded in Z platform 2, will be 3 row on the directions X and be 3 row on the Y direction with forming respectively such as corresponding 9 circuit patterns 41 altogether of the function element of LSI circuit." function element " is the least unit as single independently electron device, that is, and and single chip.In last photoetching treatment once or more early, in the street of each unit exposure field ER line (street line) 42 (or " cutting allowance " part between chip), form a plurality of position detection marks PM.More particularly, in the peripheral part of the unit exposure field ER shown in Fig. 7 or in the inside part that extends along the profile border of unit exposure field ER, form 24 position detection marks PM altogether.For example, between two adjacent LSI circuit patterns 41, form 24 position detection marks PM altogether.
Although not shown in Figure 7, in the fringe region of each LSI circuit pattern 41, also form one or more position detection marks PM in order to simplify accompanying drawing.For example, in Fig. 8, the circuit pattern 41 of system LSI circuit comprises the circuit pattern 41e of circuit pattern 41d, A/D (analog digital) unit of circuit pattern 41c, DRAM (dynamic ram) of circuit pattern 41b, I/O unit of circuit pattern 41a, the SRAM (static RAM (SRAM)) of CPU and the circuit pattern 41f of D/A (digital simulation) unit.In this case, in circuit unit 41a at least one circuit unit to the circuit unit 41f, form one or more position detection marks PM.In other words, the mark that need form a plurality of position detection marks PM in the fringe region that is used for before the processing of the exposure method of present embodiment in each function element of the unit exposure field of wafer W forms and handles.
When arranging the position detection marks PM of sufficient amount in the fringe region in each function element, can remove the position detection marks PM on the street line 42.Fringe region be meant each LSI chip of cutting down from wafer not with the zone of the corresponding circuit pattern of LSI circuit.
In the example shown in Fig. 8, form a position detection marks PM in the bight of each circuit pattern of circuit pattern 41a to the circuit pattern 41f.Select as another kind, can in the fringe region of each circuit pattern of circuit pattern 41a to the circuit pattern 41f, form one or more position detection marks PM.As shown in Figure 9, when each circuit pattern 41 is the flash memory of the circuit pattern 41j that is used to comprise the circuit pattern 41g that is used for the horizontal line demoder, the circuit pattern 41h that is used for the perpendicular line demoder and is used for storage unit, form position detection marks PM in one or more zone of each circuit pattern of the circuit pattern 41g that circuit pattern is sparse relatively therein to the circuit pattern 41j.
Though not shown in figures, the mask M that is used to form a plurality of position detection marks PM has in the pattern field and 9 LSI circuit patterns, 41 corresponding circuit patterns.Mask M also has the corresponding a plurality of marks of a plurality of position detection marks PM in the fringe region with each circuit pattern.In the unit exposure field ER of wafer W, form in the structure of one or more position detection marks PM in the fringe region of at least one included function element, can in unit exposure field ER, form the position detection marks PM of predetermined quantity with predetermined distribution (for example, evenly distribute, be evenly distributed or dense distribution).In Fig. 7, Fig. 8 and Fig. 9, for simplicity, with respect to LSI circuit pattern 41 and circuit pattern 41a to circuit pattern 41j, the width of exaggerative street line 42 and the size of each position detection marks PM.
Next the exposure method of present embodiment detects the position (S13) of a plurality of position detection marks PM among at least one unit exposure field ER of wafer W.In position probing treatment S 13, drive XY platform 3 and aim at (S13a) with the sensing range 10f of position detecting system 10 with specific unit exposure field ER with wafer W.Then, a plurality of position detecting mechanisms that form position detecting system 10 detect direction position (S13b) in the wafer face of a plurality of position detection marks PM that form in unit exposure field ER.A plurality of position detection marks PM are arranged in the fringe region in the scope of at least one included among unit exposure field ER function element, and can it be arranged in the extraneous fringe region of function element when needed.
In detecting treatment S 13b, can utilize the quantity position detecting mechanism identical position of the many position detection marks PM of (basically side by side) detection side by side with the quantity of the position detection marks PM that in unit exposure field ER, forms.Select position that can the many position detection marks PM of repeated detection as another kind.In addition, in detecting treatment S 13b, can utilize the identical position detecting mechanism of quantity of the selected position detection marks PM among quantity and the many position detection marks PM that in unit exposure field ER, form side by side to detect the position of selected position detection marks.Select position that can the selected position detection marks PM of repeated detection as another kind.In addition, another unit exposure field ER of wafer W can be aimed at the sensing range 10f of position detecting system 10 when needed, and can be at the position repeatable position detecting operation (S13c) of a plurality of position detection marks PM among other unit exposure field ER.Can in position probing treatment S 13, wafer W be aimed to remove registration process S12 with projection optical system PL (and mask M).
Next, in the exposure method of present embodiment,, calculate the state (S14) of the distortion that in the unit exposure field ER of wafer W, takes place based on the positional information that in position probing treatment S 13, obtains.In The deformation calculation treatment S 14, the The deformation calculation unit 11 that has received the testing result of position detecting system 10 calculates each position detection marks among a plurality of position detection marks PM that form with respect to the positional offset amount of the reference position of correspondence in the unit exposure field ER of wafer W, then based on the information about the positional offset amount of each position detection marks PM, the distortion that utilizes approximation to function in unit exposure field ER, to take place.In The deformation calculation treatment S 14, can calculate deformation state at each unit exposure field that is subjected to position probing treatment S 13.
By this way, for example in position probing treatment S 13, use a plurality of position detecting mechanisms side by side to detect the position of the position detection marks PM of the predetermined quantity that in unit exposure field, forms with predetermined distribution.This makes it possible to fast and accurately to measure distortion that (calculating) take place or the distortion that takes place in the LSI circuit pattern in unit exposure field ER in The deformation calculation treatment S 14.
Next the exposure method of present embodiment comprises: based on the information about deformation state that obtains in The deformation calculation treatment S 14, revise the shape (S15) that will be exposed to the LO-pattern on the wafer W as required.When unit exposure field ER when distortion that has made wafer W in processes such as processing of wafers, the available circuit pattern that forms in unit exposure field ER also has been out of shape and has departed from the desired design pattern.Therefore, when the state of the distortion that takes place in unit exposure field ER surpasses its allowed band, the novel circuit pattern (LO-pattern) that exposes on the available circuit pattern in unit exposure field ER can not overlap on the available circuit pattern exactly.
In the exposure method of present embodiment, in alteration of form treatment S 15,, revise the reflecting surface of at least one level crossing among level crossing M1 and the level crossing M2 as required based on the instruction that provides from master control system 7.This generates for example distortion of scheduled volume on one's own initiative in projection optical system PL.As a result, by with unit exposure field ER in the corresponding mode of distortion of available circuit pattern be modified in the shape of the LO-pattern of exposing among the unit exposure field ER.
At last, the exposure method of present embodiment comprises: each the unit exposure field ER at wafer W repeats projection exposure (S16).According to general rule, the identical circuit pattern of exposure in each unit exposure field ER.Therefore, when the distortion that takes place in each unit exposure field ER is not depended on the position of each the unit exposure field ER on the wafer W in fact and depend primarily on the characteristic of the circuit pattern that exposes in each unit exposure field ER, the state of the distortion that in a typical flat exposure field, takes place that use obtains in The deformation calculation treatment S 14, the expectation aberration of setting projection optical system PL.In this state, repeat projection exposure at each unit exposure field ER.Select as another kind, in this case, when Shape Modification treatment S 15 kept the constant expectation aberration of projection optical system PL, projection exposure treatment S 16 can repeat projection exposure at each unit exposure field ER based on the mean value that is illustrated in the value of the state of the distortion that takes place of acquisition in the The deformation calculation treatment S 14 in a plurality of unit exposure field.
When position that each the unit exposure field ER on the wafer W is depended in the distortion that takes place in each unit exposure field ER (for example, depend on that unit exposure field ER whether locate by the centre position on wafer W, peripheral position etc.) time, in projection exposure treatment S 16, the state of the distortion that can take place based on each unit exposure field in a plurality of unit exposure field that are arranged in the diverse location place on the wafer W is revised the aberration of projection optical system PL as required.In this state, can repeat projection exposure at each unit exposure field ER.Select as another kind, in this case, the state of the distortion that projection exposure treatment S 16 can take place in based on each unit exposure field in wafer W is adjusted at each unit exposure field in the aberration of projection optical system PL, repeats projection exposure at each unit exposure field ER.
As mentioned above, in the exposure method of present embodiment, use is used to detect the position detecting system (position detecting mechanism) 10 that drops on a plurality of positions in the scope that equates haply with each unit exposure field ER of wafer W, direction position in the wafer face of a plurality of position detection marks PM that detection forms in the fringe region of each LSI of unit exposure field ER (function element) circuit pattern 41.Based on positional information (position probing value), calculate the state of the distortion that in each unit exposure field ER, takes place, thereby the distortion that takes place in the available circuit pattern that forms is measured on pin-point accuracy ground in unit exposure field ER about a plurality of position detection marks PM.
Therefore, in the present embodiment, be modified in the shape of the LO-pattern of exposing in the unit exposure field accordingly with the distortion of available circuit pattern in unit exposure field ER.This has improved the overlapping accuracy of the available circuit pattern on the wafer W with the pattern of new exposure.As a result, the exposure method of present embodiment makes it possible to detect the distortion that takes place fast and accurately based on a plurality of position detection marks PM that form with predetermined distribution in unit exposure field ER, and makes it possible to pin-point accuracy ground overlapping pattern on wafer W.
In above embodiment, a plurality of detection optical system (32 to 34) and the quantity photoelectric detector 35 identical with the quantity of detection optical system that are arranged in parallel adjacent to each other with two-dimensional approach form a plurality of position detecting mechanisms.Yet the present invention is not limited to such structure.The quantity of position detecting mechanism, layout and structure can be various.Specifically, for example as shown in figure 10, be used to detect publicly a plurality of position detection marks the position single common detection optical system 51 and be arranged in the sensing range of common detection optical system 51 and a plurality of imaging devices (photodetector) 52 of being arranged in the top of common detection optical system 51 can form a plurality of position detecting mechanisms.In the example shown in Figure 10, use a plurality of independently imaging devices 52.Yet a plurality of parts of the imaging plane of single imaging device can substitute a plurality of independently imaging devices 52 as a plurality of photodetectors.The structural change of the example shown in Figure 10 can be become comprise a plurality of common detection optical system 51 or change over and comprise one or more position detecting mechanism in addition with the structure shown in Fig. 2.
Select as another kind, as shown in figure 11, be used to detect the single common detection optical system 53 of position of a plurality of position detection marks and the line sensor (photodetector) 54 that forms with the light of detection common detection optical system 53 by a plurality of imaging device 54a that for example arrange publicly can form a plurality of position detecting mechanisms along a direction.In this case, utilize XY platform 3 make wafer W with respect to common detection optical system 53 along when the direction of quadrature moves mutually with the direction that is furnished with a plurality of imaging device 54a, scanning detects the position of a plurality of position detection marks.Structural change in the example shown in Figure 11 can be become to comprise a plurality of imaging device 54a that are arranged in parallel adjacent to each other with two-dimensional approach in a plurality of common detection optical system 53, the single thread detector 54 or a plurality of line sensors 54 that are arranged in parallel adjacent to each other.
Although use the position detecting mechanism based on imaging device in above embodiment, the present invention is not limited to such structure.The detection method of location revision testing agency in every way.For example, can use the laser scanning position detecting mechanism, laser beam spot scanning position certification mark by utilizing slit-shaped also uses photodetector to detect light from the position detection marks scattering, detects the position of the position detection marks that is formed by for example sublevel mark (stepped mark).Select as another kind, can use the grating alignment position detecting mechanism, by utilizing the light beam diagonal line ground lighting position certification mark on the both direction and using photodetector to detect, measure the position of the position detection marks that forms by for example grating marker from the light of position detection marks reflection.
Although optical surface shape modification unit 12 is revised the shape of the reflecting surface of the level crossing M1 that formed by deformable mirror and level crossing M2 when needed, the present invention is not limited to such structure.For example, optical surface shape modification unit 12 can be when needed by the plane parallel glass plate being out of shape revise the shape of the optical surface of projection optical system.In above embodiment, optical surface shape modification unit 12 is revised the shape of reflecting surface of level crossing M1 or level crossing M2 when needed to revise the aberration of projection optical system PL, generate the distortion of the projection optical system PL of scheduled volume, and revise the shape that is exposed to the LO-pattern on the wafer W.Yet the present invention is not limited to this structure.Optical surface shape modification unit 12 can revise near the object plane that is arranged in projection optical system position, with the position of this object plane optical conjugate or this conjugate position near the position or near the shape of at least one optical surface of the position the picture plane of projection optical system.In this case, optical surface shape modification unit 12 can generate the distortion of scheduled volume under the situation of essentially no any aberration.
Usually, the shape of at least one optical surface by revising projection optical system can be revised the aberration of projection optical system and can revise the shape that is exposed to the LO-pattern on the substrate.In addition, can also be modified in the shape of the LO-pattern of exposing on the substrate usually by the aberration of revising projection optical system.Except the aberration of revising projection optical system or as the substituting of the aberration of revising projection optical system, the shape of patterned surfaces that can also be by the modification mask is modified in the shape of the LO-pattern of exposing on the substrate.
Although in above embodiment, be applicable to the single exposure method of in each unit exposure field of wafer W, the pattern of mask M being carried out single exposure according to embodiments of the invention, the present invention is not limited to the single exposure method.Go in each unit exposure field of wafer W, the pattern of mask M being carried out the scanning exposure method of scan exposure according to embodiments of the invention.In this case, must be modified in the shape of the LO-pattern of exposing on the substrate according to relatively moving of substrate in the scan exposure process.
Although be applicable to according to embodiments of the invention and use the exposure method that is formed with the mask M of the pattern that will be transferred on it, application of the present invention is not limited to use the method for mask M.The present invention can also be applicable to maskless exposure.In this case, can use the pattern generation equipment that forms predetermined pattern based on predetermined electronic data to come alternative mask.For example can use the reflective slms (for example, digital micromirror device) that drives based on predetermined electronic data to generate equipment as pattern.For example, at United States Patent (USP) the 5th, 523, the exposure device that uses such reflective slms has been described in No. 193.The exposure device that uses reflective slms is used to form the shape that the predetermined electronic data of predetermined pattern for example is modified in the LO-pattern of exposing on the substrate by the status modifier according to the distortion in the unit exposure field that obtains in The deformation calculation treatment S 14.Can use transmissive spatial light modulator or luminescent image display element to substitute reflective slms.
By assembling the exposure device that the various subsystems that comprise above-mentioned parts are made the exposure method that uses above embodiment in the mode that keeps predetermined mechanical precision, electric precision and light precision.In order to keep mechanical precision, electric precision and light precision, adjust optical system to realize the light precision, adjust mechanical system with the realization mechanical precision, and adjust electric system to realize electric precision.The processing of groups of subsystems being dressed up exposure device comprises: subsystem is mechanically interconnected, circuit is carried out distribution, and pressure circuit is carried out the pipeline connection.The processing of before the processing of groups of subsystems being dressed up exposure device, assembling subsystem.After groups of subsystems being dressed up the finishing dealing with of exposure device, this device is totally adjusted to keep precision.Preferably, make this exposure device in the ultra-clean chamber under controlled condition (comprising temperature and cleanliness).
The use projection optical system of above embodiment can be used to make electron device (comprising semiconductor devices, image device, liquid crystal display device and thin-film head) with pattern exposure exposure method of (exposure-processed) to sensitive substrate.Now form the exemplary method that predetermined circuit patterns is made electron device (or specifically, semiconductor devices) on such as the sensitive substrate of wafer with reference to the exposure method of the flow chart description shown in Figure 12 by utilizing present embodiment.
In the step S301 shown in Figure 12, at first on first wafer, form metal film by gas deposition.In step S302, the metal film that forms on each wafer in first wafer is applied photoresist.In step S303, utilize the exposure method of present embodiment, use projection optical system the picture of the pattern that forms on mask to be exposed and it sequentially is transferred on the exposure region of each wafer in first wafer.In step S304, the photoresist that forms on each wafer in first wafer is developed.In step S305, use the resist pattern that on wafer, forms each wafer in first wafer to be carried out etching as mask.This forms in the exposure region of each wafer and the corresponding circuit pattern of mask pattern.
Form the circuit pattern on upper strata to finish semiconductor devices etc. thereafter.Utilize the above-mentioned semiconductor device manufacture method, have the semiconductor devices of fine circuitry pattern with the high productivity manufacturing.To step S305,, metal film is applied resist at step S301 by gas deposition plated metal on wafer, carry out then to resist expose, the processing of development and etching.Before these are handled, can at first on wafer, form silicon oxide film, can apply resist to this silicon oxide film, can carry out then to resist expose, the processing of development and etching.
Utilize the exposure method of present embodiment, can make electron device by going up formation predetermined pattern (circuit pattern or electrode pattern) at dull and stereotyped (glass substrate) such as liquid crystal display device.Now make an example of the method for liquid crystal display device with reference to the flow chart description shown in Figure 13.In Figure 13, in step S401, carry out pattern and form processing.In step S401, the exposure method that utilizes present embodiment is with the mask pattern transfer printing and expose to sensitive substrate (for example, being coated with the glass substrate of resist).In other words, carry out photoetching treatment.By photoetching treatment, on sensitive substrate, form the predetermined pattern that comprises a lot of electrodes.Thereafter, by comprising that the processing that development treatment, etching processing and resist removal are handled forms predetermined pattern on substrate.Then, in step S402, carry out color filter and form processing.
In color filter forms treatment S 402, by for example many groups of R (redness) point, G (green) point and B (blueness) being pressed matrix arrangements or will organizing the color filter that forms by R striped, G striped and B striped more and arrange along the horizontal scanning line direction and form color filter.After color filter forms treatment S 402, in step S403, carry out the unit assembling and handle.In step S403, will form treatment S 401 substrate that obtains and the color filter that forms treatment S 402 acquisitions by color filter etc. by pattern and fit together to form liquid crystal board (liquid crystal cells) with predetermined pattern.
Assemble in the treatment S 403 in the unit, for example, liquid crystal is injected between substrate with predetermined pattern that obtains by pattern formation treatment S 401 and the color filter that forms treatment S 402 acquisitions by color filter to form liquid crystal board (liquid crystal cells).In the module assembling of carrying out in step S404 was subsequently handled, installation was used to make the liquid crystal board of being assembled (liquid crystal cells) can carry out the circuit of display operation and comprises other parts backlight.This finishes liquid crystal display device.Utilize above-mentioned liquid crystal display device manufacture method, have the liquid crystal display device of fine circuitry pattern with the high productivity manufacturing.
The present invention is not limited to previous embodiment, but can carry out various changes and modification to its parts under the situation that does not deviate from scope of the present invention.And, disclosed parts in an embodiment can be assembled with combination in any and be realized the present invention.For example, can from embodiment, omit some parts in disclosed whole parts.In addition, the parts among the different embodiment can be carried out suitable combination.
Claims (17)
- One kind by projection optical system with expose exposure method on the unit exposure field of substrate of LO-pattern, this exposure method comprises:The position probing step, utilization comprises the position detecting system of a plurality of benchmarings position in the scope that a unit exposure field in the described unit exposure field that drops on described substrate equates haply, detects a plurality of position detection marks at least one unit exposure field about the position of direction in the face of described substrate;The The deformation calculation step based on the information relevant with positions described a plurality of position detection marks that obtain in described position probing step, is calculated the state of the distortion in described at least one unit exposure field; AndThe alteration of form step, based on the deformation state that in described The deformation calculation step, obtains, the shape of the LO-pattern that modification will expose on described substrate,Wherein, the position detection marks that detects in described position probing step is arranged at least one included in described at least one unit exposure field on described substrate function element.
- 2. exposure method according to claim 1 wherein, is arranged in described position detection marks in described at least one function element and comprises position detection marks in the fringe region that is arranged in described at least one function element.
- 3. exposure method according to claim 1 and 2, wherein, described position probing step comprises: the position of detecting at least 4 position detection marks in the described position detection marks.
- 4. according to each the described exposure method in the claim 1 to 3, wherein, a plurality of detection optical system that the utilization of described position probing step is arranged in parallel adjacent to each other detect the position of described a plurality of position detection marks.
- 5. exposure method according to claim 4, wherein, described position probing step is utilized a plurality of optical detecting units, detects the light via described a plurality of detection optical system.
- 6. according to each the described exposure method in the claim 1 to 4, wherein, the utilization of described position probing step is arranged in the interior a plurality of optical detecting units of sensing range of at least one included in described position detecting system detection optical system, detects the light via described detection optical system.
- 7. according to each the described exposure method in the claim 1 to 3, wherein, a plurality of optical detecting units that the utilization of described position probing step is arranged in parallel adjacent to each other detect the light via common detection optical system included in the described position detecting system.
- 8. exposure method according to claim 7, wherein, described position probing step detects the position of described a plurality of position detection marks when described substrate is moved with respect to described common detection optical system.
- 9. according to each the described exposure method in the claim 1 to 8, wherein, described position probing step detects the position of described a plurality of position detection marks under the situation of not using described projection optical system.
- 10. according to each the described exposure method in the claim 1 to 9, wherein, described Shape Modification step comprises the aberration modify steps of the aberration of revising described projection optical system.
- 11. exposure method according to claim 10, wherein, described aberration modify steps comprises the optical surface shape modification step of the shape of revising at least one optical surface in the described projection optical system.
- 12. exposure method according to claim 11, wherein, described optical surface shape modification step revise near the object plane that is arranged in described projection optical system position, with the picture plane of the position of described object plane optical conjugate, near the described conjugate position position or described projection optical system near the shape of optical surface of position.
- 13. according to each the described exposure method in the claim 1 to 12, wherein, described Shape Modification step comprises the mask surface Shape Modification step of the shape of the patterned surfaces of revising the mask on the object plane that is arranged in described projection optical system.
- 14., wherein, use described projection optical system that described LO-pattern is exposed to described substrate with reduction magnification according to each the described exposure method in the claim 1 to 13.
- 15. each the described exposure method according in the claim 1 to 14 also comprises:The scan exposure step, when moving described substrate along predetermined direction with respect to described projection optical system with the scanning of described LO-pattern and expose to described substrate,Wherein, described Shape Modification step is according to the shape of revising described LO-pattern relatively moving of substrate described in the scan exposure process.
- 16. a method of making electron device, this method comprises:Use is according to the lithography step of each the described exposure method in the claim 1 to 15.
- 17. the method for manufacturing electron device according to claim 16 also comprises:Mark forms step, forms a plurality of position detection marks in the included function element in the unit exposure field of substrate.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US90759507P | 2007-04-10 | 2007-04-10 | |
| US60/907,595 | 2007-04-10 | ||
| US12/071,911 | 2008-02-27 |
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| CN101652719A true CN101652719A (en) | 2010-02-17 |
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| CN200880011418A Pending CN101652719A (en) | 2007-04-10 | 2008-04-07 | Exposure method and electronic device manufacturing method |
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| JP5261847B2 (en) * | 2009-06-16 | 2013-08-14 | 株式会社ブイ・テクノロジー | Alignment method, alignment apparatus, and exposure apparatus |
| DE102009048553A1 (en) | 2009-09-29 | 2011-03-31 | Carl Zeiss Smt Gmbh | Catadioptric projection objective with deflecting mirrors and projection exposure method |
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- 2008-04-07 CN CN200880011418A patent/CN101652719A/en active Pending
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