CN101643891B - Device and process method for filling aluminum into nano through holes by using PVD method - Google Patents
Device and process method for filling aluminum into nano through holes by using PVD method Download PDFInfo
- Publication number
- CN101643891B CN101643891B CN2008100540682A CN200810054068A CN101643891B CN 101643891 B CN101643891 B CN 101643891B CN 2008100540682 A CN2008100540682 A CN 2008100540682A CN 200810054068 A CN200810054068 A CN 200810054068A CN 101643891 B CN101643891 B CN 101643891B
- Authority
- CN
- China
- Prior art keywords
- aluminium
- radio
- power supply
- frequency power
- silicon chip
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Images
Landscapes
- Electrodes Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
The invention relates to a device and a process method for filling aluminum into nano through holes by using a PVD method, which adopt a radio-frequency power supply and a high-frequency plasma method of physical vapor deposition (PVD), wherein in a PVD chamber, the radio-frequency power supply is applied to a target material and a wafer respectively, and the Al is filled into the through holes of a minisize semiconductor chip and becomes a conducting material between semiconductor layers. The device and the process method can overcome the defect that the conventional process can only reach over 0.13 micron, and extend the application of the aluminum to a degree that the characteristic line width is less than or equal to 0.1 mum and the depth-to-width ratio (h/CD) is more than or equal to 6. The device and the process method reduce the device running temperature, save water, electricity and consumptive materials, greatly improve the utilization rate of production facilities and the wafer yield, can be applied to the conductive through holes between semiconductor integrated circuit chip layers, contact holes, grooves and the like for filling the conductive materials of the aluminum and the like, and also can be used for depositing the aluminum used on metal door circuits of which the line width is less than 30 nanometers. The invention particularly points out that the same method is suitable for all technical materials with low melting point.
Description
Technical field
The present invention relates to the manufacturing of VLSI (very large scale integrated circuit) chip, particularly a kind of device and processing method of carrying out the nano through holes filling aluminum with the PVD method, specifically be to adopt radio frequency (RadioFrequency, RF) the high frequency plasma method of power supply and physical vapor deposition (PVD), Al is filled in the through hole of undersized semi-conductor chip, become the electro-conductive material between semiconductor layer and the layer, can overcome traditional technology and can only reach defective more than 0.13 micron.The present invention can realize the application of aluminium is extended to characteristic line breadth≤0.1 μ m, and the degree of depth and width are than (h/CD, Critical Dimension) 〉=6.
Background technology
(Integrated Circ μ it, abbreviation: IC) the chip fabrication techniques development is very rapid for super large-scale integration.Along with wafer process to the development of higher chip density, the die size of use reach 300mm or more than, characteristic dimension is retracted to 45nm even littler.Nearly ten million transistor needs number to be electrically connected in 10,000,000,000 metal.Six layers even more metal connecting layer are used in this requirement.They mainly are made up of metal connecting through hole between metal connection groove and layer and the layer, and wherein the metal filled technology of through hole becomes more and more difficult along with line widths shrink.Aluminium is used to fill contact and through hole, is called the aluminium planarization.This technology can realize by backflow and multistep deposit.Metal current Al mainly is used in minimum conductor width (characteristic line breadth) technical greater than 0.18 μ m.Characteristic line breadth for example, can't solve the problem of void defects less than the technology imperfection that aluminium enters through hole of filling out of 0.18 μ m, simultaneously solid-state the dissolving each other of sial and the aluminium spike that produces.These problems finally can cause component failure and output capacity to descend.
Often replace for overcoming above-mentioned defective by copper.At present the application of copper in the nanoscale features live width more and more extensively has two major causes in the IC technology: the one, and copper helps to reduce signal delay that interconnection line causes to improve chip performance.The 2nd, through hole is filled out aluminium technology at technology node imperfection below 0.18 micron.Practical application for example flash memory is first to big density and lower production cost requirement, and speed of response is second.If can push the technology of aluminium to 0.1 micron, then many application by copper alternate technology just there is no need, and the production unit cost still is that running cost all can reduce greatly, brings objective economic benefit.
The process of traditional filling Al is:
The first step: with PVD (Physical Vapor Deposition, physical vapor deposition) the method blocking layer (blocking layer is a kind of incessantly, is example with Ti/TiN here, but is not limited to Ti/TiN) of on insulation layer, growing.Second step: go up thickness approximately so that the PVD method is long again
The aluminium Seed Layer, see Fig. 2.The 3rd step: with the long fast thick pact of PVD method
Aluminium lamination is seen Fig. 3.The 4th step: 500 ℃ of high temperature ∽, or high temperature+high pressure (∽ 500atm), or under high temperature and the plasma bombardment (400 ℃ of ∽), aluminium is returned in the run-in-hole, see Fig. 4.The key of all filling up this a part of success or not is that Seed Layer evenly covers, and sees Fig. 2 in the 2nd step.
If did for second step from the PVD method, be preferably in the whole process temperature less than 120 degrees centigrade, so that aluminium＜111〉crystal orientation orientations finish.And the 4th step needed a high temperature chamber, so should not put together.In addition, after the small size features live width, second step was difficult to also accomplish that each to even plated aluminum, often was less than the side and coats aluminium, and seal at the top, and theoretic Fig. 2 is in practice as Fig. 6.At present, even also no one else can do the following high aspect ratio of 0.13 μ m fills out aluminium in the laboratory.
Fig. 5 sees in the PVD system of direct supply, and aluminium mainly lays to come under the effect of Ar+ by direct current, and wherein ratio part of accounting for of aluminum ion is very little, and major part still is the aluminium of atomic state.The verticality that aluminium is got to the hole depends on the size (θ) at sputter angle.Angle is more little, and verticality is good more, and this just requires target far away from wafer, but requires aluminium can get to wafer.Certainly will require direct current to increase like this, because the fusing point of aluminium is low, big electric current can melt aluminium, so this way has suitable limitation.The edge of wafer still more, both sides are laid asymmetric, and all there is uniform covering on the more difficult both sides of accomplishing, seal early easilier.As Fig. 6.Therefore, necessary this step is carried out bigger improvement, allow to be applicable to the small size features live width, and still can accomplish well to cover uniformly.
If made for second step with the CVD method, CVD is respectively to evenly fine, but speed of response is slow, is not suitable for doing the 3rd step, so still need two different reaction chambers.The CVD method made for second step in addition, and the carbon content height of film causes the space to form easily.
Generally speaking, the shortcoming of art methods is: it is unavoidable void defects to occur in the IC production technique of characteristic line breadth less than 0.18 μ m and high aspect ratio, and must there be two reaction chambers to come the completing steps process in second to the 4th step, production unit requires high, usually substitute by copper, improved production cost greatly, especially more be difficult to extend to below the 0.1 μ m (nano level) filling out aluminum technology.
Summary of the invention
The purpose of this invention is to provide and a kind ofly carry out the device and the processing method of nano through holes filling aluminum, can overcome the shortcoming of prior art with the PVD method.It is to the device of existing filling aluminum and the improvement of processing method, make the characteristic line breadth≤0.1 μ m that fills out filling aluminum in the aluminum technology, the degree of depth and width make the step of originally being finished by 2 reaction chambers can merge to one, thereby improve the utilization ratio and the wafer yield of production unit greatly than (h/CD) 〉=6.
A kind of device that carries out the nano through holes filling aluminum with the PVD method provided by the invention comprises:
The pvd chamber chamber, direct supply, magnet, wafer base, target, target place the top of pvd chamber chamber, and wafer base places bottom, pvd chamber chamber, and target is relative with wafer base.This installs on the described target radio-frequency power supply is installed, and on the described wafer radio-frequency power supply is installed.Base-plate temp 100-500 ℃.See Fig. 7.
Radio-frequency power supply on the described target is the supporting power supply of 2MHz-200MHz (such as 80MHZ) high frequency plasma;
Radio-frequency power supply on the described wafer is the supporting power supply of the high frequency plasma of 0.5MHz-100MHz.
The power of radio-frequency power supply is 500-10000W on the described target; The power of the radio-frequency power supply on the described wafer is 200-2000W.
Radio frequency on the described target provides ionic concentration, and the radio frequency on the described wafer provides energy of ions.Radio frequency on the described wafer also can be several frequencies.For example: two kinds, the mixing of 2MHZ and 27MHZ is to reach the coupling of optimum concn and energy.All important parameters can be regulated separately.Radio frequency on the described target also can be selected pulse mode for use.The present invention mainly adopts high frequency plasma exciting aluminium, and reduces molecule mean free path under high vacuum pressure 1.33Pa-66Pa, improves probability of collision, to improve the concentration of metal ion to greatest extent.Aluminum ion then can improve the verticality that enters in the hole under the effect in electric field, magnetic field, reduce the formation of binding in advance.
Compare with the existing main system that excites aluminium/aluminium cations by big constant current and magnetic field, it adds high frequency electric source (2MHz-200MHz) on target, power that like this can be by high frequency and direct current recently in the buncher body aluminium cations account on the concentration silicon chip of overall aluminium and also add high frequency electric source (0.5MHz-100MHz), mainly be the energy that is used to modulate aluminium cations and argon ion.Accomplish the independent control of aluminium cations and argon cation concn, energy like this, widen the adjusting window of technology, to adapt to the requirement of different step in the aluminium film process of growth.In addition, under the high frequency plasma environment, the reflux temperature of aluminium film also significantly reduces, and aluminium film process of growth can be finished in a chamber like this.Not only simplify existing operation, improved plant factor, also reduced water power consumption, prolonged target life.
Provided by the invention a kind of to carry out the step that the processing method of nano through holes filling aluminum comprises with the PVD method be indoor at a pvd chamber, adds radio-frequency power supply respectively with wafer on the target, realizes through hole filling aluminum process.
Provided by the inventionly a kind ofly carry out the step that the processing method of nano through holes filling aluminum comprises with the PVD method:
1) under the vacuum condition of pvd chamber chamber,, aluminium is deposited to via bottoms with on the blocking layer, the grow Seed Layer of aluminium of PVD method.See Fig. 8.This step is under the action condition in magnetic field, inspire aluminium cations by radio-frequency power supply (I), enter in the undersized through hole under radio-frequency power supply (II) effect of aluminium cations on silicon chip, silicon chip can not made electrostatic adhesion to the silicon chip pedestal, aluminium is deposited to the top and the bottom of through hole.
2) under plasma bombardment, the low temperature reflux effect of utilizing high frequency plasma to produce, make the top of through hole and the aluminium of bottom be distributed to the side, and make the crystal orientation major part of aluminium be＜111〉crystal orientation, aluminium evenly covers in the side; See Fig. 9.
3) increase galvanic input, and reduce pressure, be deposited to the top of the whole through hole of silicon chip to guarantee enough aluminium to increase the aluminium speed of growth; See Figure 10.
4) with above-mentioned silicon chip electrostatic adhesion to the silicon chip pedestal, silicon temperature is raised to base-plate temp rapidly, is applied with RF (I) and RF (II) again, with plasma bombardment aluminium is flow in the through hole, realizes intact filling up.See Figure 11.
Provided by the inventionly a kind ofly carry out the concrete steps that the processing method of nano through holes filling aluminum comprises with the PVD method:
1) under the vacuum condition of pvd chamber chamber, with on the blocking layer, the grow Seed Layer of aluminium of PVD method, aluminium is deposited to via bottoms, under the action condition in magnetic field, by power is that the radio-frequency power supply (I) of 500-10000W inspires aluminium cations, and the power of positively charged ion on silicon chip is to enter in the undersized through hole under radio-frequency power supply (II) effect below the 500W, aluminium is deposited to the top and the bottom of through hole, can accomplish the thickness of the thickness of bottom aluminium more than or equal to the aluminium at top, tendency does not seriously bind; Silicon chip can not made electrostatic adhesion to the silicon chip pedestal, and chip temperature is lower than base-plate temp;
2) under plasma body Ar+ bombardment, make the top of through hole and the aluminium of bottom be distributed to the side, because the aluminium fusing point is low, and under the high frequency plasma condition, in Ar+ bombardment process, form the low temperature reflux of metallic aluminium, make the crystal orientation major part of aluminium be＜111〉crystal orientation, aluminium covers uniformly in the side;
3) increase galvanic input,, thereby guarantee that enough aluminium is deposited to the whole through hole top of silicon chip with increase aluminium deposition speed; Concrete amount is decided on clear size of opening.
4) with above-mentioned silicon chip electrostatic adhesion to the silicon chip pedestal, silicon temperature is raised to base-plate temp rapidly, is applied with radio-frequency power supply (I) and radio-frequency power supply (II) again, flows in the small through hole aluminium and intact filling up with Ar+ bombardment.
Above-mentioned carries out in the processing method of nano through holes filling aluminum with the PVD method, characteristic line breadth be not under the too little situation (as, characteristic line breadth＞50 nanometers), step 1) and step 2) can and be to carry out in a step, as long as the power with radio-frequency power supply (II) in step 1) improves, realize that each is to even covering; Or if under the very little situation of characteristic line breadth (as, characteristic line breadth＜50 nanometers), step 1) and step 2), step 3) and step 4) circular treatment once more than, make in step 1), 3) a spot of aluminium of deposit so that in step 2), 4) in aluminium is filled into.
Concrete steps 1) reaction parameter is: the power of described radio-frequency power supply (I) is 500-10000W, and the power of described radio-frequency power supply (II) is below the 500W, and the thickness of aluminium deposit is about
The vacuum tightness of described pvd chamber chamber is 3Pa-60Pa (as 20Pa), and the temperature of described wafer base is controlled at 100-500 ℃ ℃; Below the DC direct current 2000W.
Concrete steps 2) reaction parameter is: the power of described radio-frequency power supply (I) is below the 2000W, and the power of described radio-frequency power supply (II) is 200-3000W.The lateral thickness of each filling aluminum be greater than
Described vacuum tightness 0.1Pa-15Pa, the power of DC direct supply are below the 500W.
Concrete steps 3) reaction parameter is: the top thickness that is deposited to through hole of aluminium
Described galvanic being input as: 1000-20000W, described vacuum tightness is less than 7Pa, and the power of described radio-frequency power supply (I) is random, 0-10000W, the power 0-2000W of described radio-frequency power supply (II).
Concrete steps 4) reaction parameter is: described vacuum pressure 0.1Pa-70Pa; The power of described radio-frequency power supply (I) is 500-10000W; The power of described radio-frequency power supply (II) is 100-1500W (as 1000W).
Being applied to of the device that carries out the nano through holes filling aluminum with the PVD method of the present invention made VLSI (very large scale integrated circuit) chip in characteristic line breadth≤0.1 μ m and the degree of depth and the IC procedure technology of width than (h/CD) 〉=6.Used under the high frequency plasma environment, helped to reduce the temperature of metal reflow, and high frequency plasma can increase concentration of metal ions, improve each homogeneity, make and fill out aluminium technology and extend to small size to growth.
A kind of device and processing method distinguishing feature of carrying out the nano through holes filling aluminum with the PVD method provided by the invention is:
1) with radio frequency-physical vapor deposition (RF-PVD) filling aluminum, reach characteristic line breadth≤0.1 μ m (small size), the degree of depth and width are than (h/CD) 〉=6; Adapt to super large-scale integration production.
2) high frequency plasma can reduce the temperature limitation that aluminium refluxes, and Seed Layer is produced all below 120 ℃, helps＜111〉crystal orientation formation.
3) because backflow effeet, do not need very high radio frequency (II) just can with aluminium from the top and the bottom be assigned to the side.The top in hole and bottom are difficult for puncturing like this.Be suitable for through hole and groove together or the structure that runs through.
4) because whole process temperature is much lower than usual method, the Ti/TiN layer enters in the insulation layer after being difficult for producing alloy with aluminium.The also corresponding minimizing of infringement to the isolator of low-k.
5) can whether switch silicon temperature by electrostatic adhesion in 4 steps flow charts, can accomplish the low-temperature epitaxy of subcrystal layer, can accomplish again to reflux after temperature raises and fill.
6) device of the present invention and processing method also are fit to all low-melting materials.Here the aluminium of mentioning often is mixed with the X alloy of 0.5%-4% copper, and to improve electromigration patience, copper itself just is entrained on the target.
7) after finishing the blocking layer, original two pvd chamber chambers (reactive aluminum chamber 2, blocking layer---reactive aluminum chamber 1---) that the division of labor is different, can work alone separately now, in through hole, fill out aluminium, finish previous described second to the 4th step subsequent step of filling out in the aluminium technology, wafer yield can improve 50%.
8) under the bigger or very little situation of characteristic line breadth, process step of the present invention can correspondingly be adjusted.
In a word, the present invention can overcome on the traditional technology because the application of void defects restriction aluminium, improve the aluminium film further towards the limitation of small size development each to even covering and reduce aluminium film reflux temperature.The present invention has reduced the equipment operating temperature, saves water power, consumptive material, improves the utilization ratio and the wafer yield of production unit greatly.The present invention also can be applicable to the flowage structure under large-size or the very undersized situation, the through hole that can be used for semiconductor integrated circuit chip interlayer conduction, conducting material such as filling aluminum such as contact hole, groove can also be used for the deposit of the aluminium used on the metal door circuit of live width less than 30 nanometers.Also be fit to all low-melting technologic materials with quadrat method.
Description of drawings
Fig. 1 should fill out undersized through hole synoptic diagram for electro-conductive material aluminium.
Fig. 2 for prior art fill out before the aluminium in Ti/TiN blocking layer and Seed Layer synoptic diagram.
Fig. 3 for prior art fill out the aluminium process in Ti/TiN blocking layer and Seed Layer synoptic diagram.
Fig. 4 fills out Ti/TiN blocking layer and Seed Layer synoptic diagram behind the aluminium for prior art.
Fig. 5 fills out the reaction chamber synoptic diagram of aluminium for prior art.
Fig. 6 fills out aluminium for prior art and presents the synoptic diagram that seals tendency, non-uniform phenomenon.
Fig. 7 is the improved reaction chamber synoptic diagram of filling out aluminium of the present invention.
Fig. 8 fills out Ti/TiN blocking layer and the Seed Layer synoptic diagram of aluminium to bottom and top for the present invention.
Fig. 9 evenly covers synoptic diagram for the present invention fills out aluminium to the side.
The enough aluminium of the quick accumulation of Figure 10 PVD is to schematical top view.
Figure 11 aluminium backflow synoptic diagram.
Embodiment
The present invention is described in detail as follows with reference to accompanying drawing, but they are not that the present invention is made any restriction.
As shown in the figure, 1 is isolator, and 2 is the blocking layer, and 3 is Seed Layer, and 4 is aluminium.
11 is wafer, and 22 is target, and 33 is magnet, and 44 is direct supply, and 55 is wafer base, and 66 is radio-frequency power supply (I), and 77 is radio-frequency power supply (II).
Device of the present invention mainly comprises: the pvd chamber chamber, direct supply 44, magnet 33, wafer base 55, target 22, target 22 places the top of pvd chamber chamber, wafer base 55 places bottom, pvd chamber chamber, and relative with wafer base 55, add radio-frequency power supply (I) 66 on the target 22, add radio-frequency power supply (II) 77 on the wafer (silicon chip).See Fig. 7.
Provided by the inventionly a kind ofly carry out the nano through holes filling aluminum (with characteristic line breadth=0.1 μ m with the PVD method, the degree of depth is example with width than (h/CD)=6, with doing experiment on the silica sample, carry out the standard pre-treatment, the blocking layer is Ti/TIN, on isolator SiO2, etch diameter 100 nanometers, the hole of such size of high 600 nanometers, fill out the aluminium experiment, the step that processing method specifically comprises:
1) in the pvd chamber chamber, with the Seed Layer of PVD method growth aluminium, aluminium is deposited to the bottom, hole, thickness is approximately
As Fig. 8.This step is mainly by RF (I) (power: 5000W) inspire aluminium cations under the help in magnetic field.This step DC direct current is corresponding very little, less than 2000W, selects 1000W.Technology is chosen lower vacuum tightness 3Pa-60Pa, selects 20Pa, to optimize the concentration of aluminium cations.These positively charged ions perpendicularity under the effect of the RF on the wafer (II) voltage is good, enters in the hole.This step RF (II) power does not need very high, less than 500W, selects 200W.This step can be accomplished the thickness of the thickness of bottom aluminium more than or equal to the aluminium at top, the tendency that seriously do not bind, but lateral thickness is often not enough.This step is not made electrostatic adhesion to wafer base with wafer, and because RF (II) usefulness is very little, plasma body does not play too many heat effect to wafer, and chip temperature is significantly less than base-plate temp like this, base-plate temp is controlled at 100-400 ℃, selects 200 ℃.See Fig. 8.
2) under the Ar+ bombardment, the aluminium of top and bottom is distributed to the side, and each lateral thickness is general
As Fig. 9.Because the aluminium fusing point is low, the technology that can application of cold temperature in Ar+ bombardment process refluxes.In general, be higher than 1/3 fusing point in temperature, the metal bond energy reduces greatly, and metal just can produce mobile.Under the high frequency plasma effect, then can further reduce the metal bond energy, reduce the requirement of " flowing " temperature, this temperature can drop to below 150 ℃.The energy of this step RF (II) is higher, can select 500-1500W, selects 1000W, and the frequency of RF (II) also can be two to three kinds.RF (I) can 500-10000W, selects 2000W, to satisfy the requirement of Ar+ energy and density.This step, pressure range 0.1Pa-15Pa selected 3Pa, and the DC direct current is less than 500W.Finish this step, aluminium can well-proportionedly cover the side in the side.See Fig. 9,, the aluminium side is evenly covered the aluminium redistribution.
3) increase galvanic input, 1000 to 20000W, selects 10000, and vacuum tightness is deposited to enough aluminium the top in hole less than 7Pa.As Figure 10.The thickness of aluminium
Choosing
Whole hole filled up must enough aluminium, therefore the geometrical dimension in the concrete hole of taking temperature.Here, RF (I) does not play a major role, and scope is any, 0-10000W.RF (II) selects less than 2000W (0-2000W).See Figure 10.
4) at this moment chip static electricity is adsorbed onto on the wafer base, chip temperature is raised to base-plate temp rapidly, adds RF (I) (power 500-10000W), selects 3000W, and RF (II) (100-2000W) selects 1000W.With the Ar+ bombardment aluminium is flow in the aperture.As a same reason, under the high frequency plasma effect, aluminium does not need very high temperature just can flow to aperture and intact filling up.As Figure 11.This step vacuum ranges 0.1Pa-70Pa.
The technical indicator parameter of filling aluminum of the present invention can adopt general detection means to detect.
In addition: if characteristic line breadth is not too little (＞50 nanometer), depth-to-width ratio is not under the situation of very big (＜3), Fig. 8 and processing step shown in Figure 9 can and be a step, and with the corresponding raising of RF (II), each can be accomplished in a step to even covering like this in the technology of script Fig. 8.
Under the very little situation of characteristic line breadth, Fig. 8 and Fig. 9, Figure 10 and process shown in Figure 11 can circular treatment once more than.Each a spot of aluminium of deposit is so that be filled into aluminium.
Provided by the inventionly a kind ofly carry out the nano through holes filling aluminum with the PVD method and aluminum technology can be extended to below the characteristic line breadth 0.1 μ m, adapt to super large-scale integration production.Original step of being finished by 2 reaction chambers can merge to one, improves the utilization ratio of machine.After finishing the Ti/TiN blocking layer, original two reaction chambers that the division of labor is different can work alone now separately, fill out aluminium in the hole, finish second to the 4th subsequent step of filling out in the aluminium technology, and wafer yield can improve 50%.
Outstanding positively effect of the present invention also is:
Do the filling perforation of aluminium with radio frequency physical vaporous deposition (RF-PVD), make aluminum technology extend to the following super large-scale integration production of characteristic line breadth 0.1 μ m technology.
After finishing the blocking layer, accomplish that with radio frequency physical vaporous deposition (RF-PVD) thing that 2 reaction chamber series connection are done becomes 2 reaction chamber parallel connections, two reaction chambers are filled out aluminium simultaneously, finish second to the 4th subsequent step of filling out in the aluminium technology separately.
High frequency plasma can reduce the temperature limitation that aluminium refluxes, and Seed Layer is produced all below 120 ℃, helps＜111〉crystal orientation formation, also helps lateral even covering.
In addition because backflow effeet does not need very high RF (II) just aluminium can be assigned to the side from top, hole and bottom.Top and bottom are difficult for puncturing like this.
Because whole process temperature is much lower than usual method, the blocking layer is difficult for producing alloy with insulation layer (SiO2 etc.) and aluminium, and aluminium and titanium just are difficult for diffusing into insulation layer like this.
Existing reaction chamber flow process is changed, and it is in parallel that series connection becomes, to improve per hour wafer throughput.Under the bigger or very little situation of characteristic line breadth, can adapt to row and adjust flowage structure.This device and processing method can not only be used for aluminium, but also are fit to all low-melting materials.Said aluminium among the present invention also can be aluminum-copper alloy.Also comprise low-melting material, be not limited to metal and their alloys such as aluminum bronze, aluminium germanium, make VLSI (very large scale integrated circuit) chip.
The technology of the present invention breaks through the through hole not only can be used for semiconductor integrated circuit chip interlayer conduction in addition, and conducting material such as filling aluminum such as contact hole, groove can also be used for the deposit of the aluminium used on the metal door circuit of live width less than 30 nanometers.
Claims (7)
1. one kind is carried out the processing method of nano through holes filling aluminum with the PVD method, it is characterized in that comprising the steps:
1) is under the vacuum condition in the pvd chamber chamber, with on the blocking layer, the grow Seed Layer of aluminium of PVD method, aluminium is deposited to via bottoms, under the action condition in magnetic field, inspire aluminium cations by the radio-frequency power supply I that is installed on the target, enter in the undersized through hole under the effect of the radio-frequency power supply II of aluminium cations on the silicon chip pedestal, silicon chip is not made electrostatic adhesion to the silicon chip pedestal, aluminium is deposited to the top and the bottom of through hole;
2) under plasma bombardment, make the top of through hole and the aluminium of bottom be distributed to the side, promote the low temperature reflux of metallic aluminium, make the crystal orientation major part of aluminium be＜111〉crystal orientation, aluminium evenly covers in the side;
3) increase galvanic input by the direct supply that is installed on the target, reduce pressure simultaneously to increase the aluminium speed of growth, the aluminium that deposit is enough arrives via top;
4) with above-mentioned silicon chip electrostatic adhesion to the silicon chip pedestal, under plasma bombardment was assisted, silicon temperature was raised to the silicon chip base-plate temp rapidly, was applied with the radio-frequency power supply I that is installed on the target and the radio-frequency power supply II on the silicon chip pedestal again, aluminium is flow in the through hole, realize intact filling up.
2. one kind is carried out the processing method of nano through holes filling aluminum with the PVD method, it is characterized in that comprising the steps:
1) is under the vacuum condition in the pvd chamber chamber, with on the blocking layer, the grow Seed Layer of aluminium of PVD method, aluminium is deposited to via bottoms, under the action condition in magnetic field, by being installed in power on the target is that the radio-frequency power supply I of 500-10000W inspires aluminium cations, the power of positively charged ion on the silicon chip pedestal is to enter in the through hole under the radio-frequency power supply II effect below the 500W, silicon chip is not made electrostatic adhesion to the silicon chip pedestal, aluminium is deposited to the top and the bottom of through hole, the thickness of feasible bottom aluminium is more than or equal to the thickness of the aluminium at top, and the tendency that seriously do not bind; Silicon temperature is lower than base-plate temp;
2) under plasma body Ar+ bombardment, make the top of through hole and the aluminium of bottom be distributed to the side, because the aluminium fusing point is low, in high frequency plasma Ar+ bombardment process, form the low temperature reflux of metallic aluminium, make the crystal orientation major part of aluminium be＜111〉crystal orientation, aluminium evenly covers in the side;
3) increase galvanic input by the direct supply that is installed on the target, reduce pressure simultaneously, the enough aluminium of high rate deposition arrives via top;
4) with above-mentioned silicon chip electrostatic adhesion to the silicon chip pedestal, silicon temperature is raised to the silicon chip base-plate temp rapidly, is applied with the radio-frequency power supply I that is installed on the target and the radio-frequency power supply II on the silicon chip pedestal again, flows in the small through hole aluminium and intact filling up with the Ar+ bombardment.
3. carry out the processing method of nano through holes filling aluminum according to claim 2 is described with the PVD method, it is characterized in that comprising the steps:
Characteristic line breadth is greater than 50nm, step 1) and step 2) and be to carry out in a step, as long as the power of the radio-frequency power supply II in the step 1) is improved, realize that each is to even covering; Or
Characteristic line breadth is less than 50nm, step 1) and step 2) circular treatment once more than, step 3) and step 4) also circular treatment once more than, make at step 1) and a spot of aluminium of step 3) deposit, so that in step 2) with step 4) in aluminium is filled into.
4. carry out the processing method of nano through holes filling aluminum according to claim 2 is described with the PVD method, it is characterized in that the reaction parameter of step 1) is: the power of radio-frequency power supply I is 500-10000W, and the power of radio-frequency power supply II is below the 500W, and the thickness of aluminium deposit is
The vacuum tightness of pvd chamber chamber is 3Pa-60Pa, and the temperature of silicon chip pedestal is controlled at 100-500 ℃; Galvanic being input as below the 2000W.
5. according to the described processing method of carrying out the nano through holes filling aluminum with the PVD method of claim 2, it is characterized in that step 2) reaction parameter be: the power of radio-frequency power supply I is below the 2000W, the power of radio-frequency power supply II is 200-3000W, the lateral thickness of each filling aluminum be more than or equal to
Vacuum condition is 0.1Pa-15Pa, and galvanic power input is below the 500W.
6. carry out the processing method of nano through holes filling aluminum according to claim 2 is described with the PVD method, it is characterized in that the reaction parameter of step 3) is: the thickness that aluminium is deposited to the through hole top is 1000-
Galvanic being input as: 1000-20000W, vacuum condition are less than 7Pa, and the power of radio-frequency power supply I is 0-10000W, and the power of radio-frequency power supply II is 0-2000W.
7. carry out the processing method of nano through holes filling aluminum according to claim 2 is described with the PVD method, it is characterized in that the reaction parameter of step 4) is: vacuum condition is 0.1Pa-70Pa; The power of radio-frequency power supply I is 500-10000W; The power of radio-frequency power supply II is 100-2000W.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2008100540682A CN101643891B (en) | 2008-08-05 | 2008-08-05 | Device and process method for filling aluminum into nano through holes by using PVD method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2008100540682A CN101643891B (en) | 2008-08-05 | 2008-08-05 | Device and process method for filling aluminum into nano through holes by using PVD method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101643891A CN101643891A (en) | 2010-02-10 |
| CN101643891B true CN101643891B (en) | 2011-07-27 |
Family
ID=41655950
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2008100540682A Expired - Fee Related CN101643891B (en) | 2008-08-05 | 2008-08-05 | Device and process method for filling aluminum into nano through holes by using PVD method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN101643891B (en) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8841211B2 (en) * | 2010-06-09 | 2014-09-23 | Applied Materials, Inc. | Methods for forming interconnect structures |
| CN104124196B (en) * | 2013-04-23 | 2018-10-23 | 中芯国际集成电路制造(上海)有限公司 | A method of making semiconductor devices |
| CN103346121A (en) * | 2013-07-22 | 2013-10-09 | 华进半导体封装先导技术研发中心有限公司 | Method for manufacturing TSV seed layer with fine pitch and high depth-to-width ratio |
| CN103346122A (en) * | 2013-07-22 | 2013-10-09 | 华进半导体封装先导技术研发中心有限公司 | High depth-to-width ratio TSV seed layer manufacturing method |
| CN103700621B (en) * | 2013-12-27 | 2016-06-01 | 华进半导体封装先导技术研发中心有限公司 | The lithographic method of the vertical glass through hole of a kind of high aspect ratio |
| CN109887879B (en) * | 2017-12-06 | 2021-12-17 | 北京北方华创微电子装备有限公司 | Method for covering film in hole and semiconductor processing equipment |
| CN113078131B (en) * | 2021-03-23 | 2024-06-07 | 浙江集迈科微电子有限公司 | TSV structure and TSV electroplating process |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1414623A (en) * | 2002-09-27 | 2003-04-30 | 上海华虹（集团）有限公司 | Wiring technology of copper doped metal based on A1 material |
| CN1697137A (en) * | 2004-05-12 | 2005-11-16 | 上海先进半导体制造有限公司 | Method for depositing aluminum to fill in hole in sub micron size applied to semiconductor technology |
| CN1909760A (en) * | 2005-08-05 | 2007-02-07 | 中微半导体设备(上海)有限公司 | Vacuum reaction chamber and processing method |
| CN1938449A (en) * | 2004-03-26 | 2007-03-28 | 东京毅力科创株式会社 | Ionized physical vapor deposition(IPVD) process |
-
2008
- 2008-08-05 CN CN2008100540682A patent/CN101643891B/en not_active Expired - Fee Related
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1414623A (en) * | 2002-09-27 | 2003-04-30 | 上海华虹（集团）有限公司 | Wiring technology of copper doped metal based on A1 material |
| CN1938449A (en) * | 2004-03-26 | 2007-03-28 | 东京毅力科创株式会社 | Ionized physical vapor deposition(IPVD) process |
| CN1697137A (en) * | 2004-05-12 | 2005-11-16 | 上海先进半导体制造有限公司 | Method for depositing aluminum to fill in hole in sub micron size applied to semiconductor technology |
| CN1909760A (en) * | 2005-08-05 | 2007-02-07 | 中微半导体设备(上海)有限公司 | Vacuum reaction chamber and processing method |
Also Published As
| Publication number | Publication date |
|---|---|
| CN101643891A (en) | 2010-02-10 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN101643891B (en) | Device and process method for filling aluminum into nano through holes by using PVD method | |
| US7618893B2 (en) | Methods of forming a layer for barrier applications in an interconnect structure | |
| KR100748144B1 (en) | Method for forming a metallization structure in an integrated circuit | |
| US20120153483A1 (en) | Barrierless single-phase interconnect | |
| KR100498454B1 (en) | Method for creating a damascene interconnect using a two-step plating process | |
| US8227323B2 (en) | Method for manufacturing semiconductor device | |
| US7396755B2 (en) | Process and integration scheme for a high sidewall coverage ultra-thin metal seed layer | |
| US20020041028A1 (en) | Method for forming damascene interconnection of semiconductor device and damascene interconnection fabricated thereby | |
| JPH1154458A (en) | Metallization structure | |
| JP2001068433A (en) | Bonding of seed layer not continuous nor massive to barrier layer | |
| CN103681466B (en) | The manufacture method of interconnection structure | |
| JP2020534702A (en) | Methods and equipment for filling board features with cobalt | |
| CN101005060A (en) | Structure of interconnection line and method of forming the same | |
| WO2005067025A1 (en) | Method of forming wiring structure and semiconductor device | |
| JP4169950B2 (en) | Manufacturing method of semiconductor device | |
| US8039395B2 (en) | Technique for forming embedded metal lines having increased resistance against stress-induced material transport | |
| US7767572B2 (en) | Methods of forming a barrier layer in an interconnect structure | |
| KR20010004717A (en) | Method of forming a metal wiring in a semiconductor device | |
| Valeev et al. | Manufacturing technology of intra-and interchip interconnects for modern ULSIs: Review and concepts of development | |
| JP2996931B2 (en) | Method for depositing metal in contact hole of semiconductor body | |
| US6949464B1 (en) | Contact/via force fill techniques | |
| TWI467067B (en) | Cu surface plasma treatment to improve gapfill window | |
| US20150130064A1 (en) | Methods of manufacturing semiconductor devices and a semiconductor structure | |
| CN101074485A (en) | Method of manufacturing electronic component | |
| KR101436553B1 (en) | Semiconductor appratus having through silicon via structure and manufacturing method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| DD01 | Delivery of document by public notice |
Addressee: Ji Helin Document name: Notification of Termination of Patent Right |
|
| DD01 | Delivery of document by public notice | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20110727 Termination date: 20180805 |
|
| CF01 | Termination of patent right due to non-payment of annual fee |